SE7606368L - INTEGRATED CIRCUIT DEVICE - Google Patents

INTEGRATED CIRCUIT DEVICE

Info

Publication number
SE7606368L
SE7606368L SE7606368A SE7606368A SE7606368L SE 7606368 L SE7606368 L SE 7606368L SE 7606368 A SE7606368 A SE 7606368A SE 7606368 A SE7606368 A SE 7606368A SE 7606368 L SE7606368 L SE 7606368L
Authority
SE
Sweden
Prior art keywords
gate
transistors
integrated circuit
surrounded
frame
Prior art date
Application number
SE7606368A
Other languages
Swedish (sv)
Other versions
SE416599B (en
Inventor
A G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7606368L publication Critical patent/SE7606368L/en
Publication of SE416599B publication Critical patent/SE416599B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

A complementary integrated circuit in MOS technology contains at least one P-channel FET (18) with insulated gate (24) and one N-channel FET (16) with insulated gate (26). A closed geometry results in fast transistors with a high packing density. Drain zones (38 and 42) are surrounded by frame-like gate structures (24 and 26) which, in turn, are surrounded by source zones (40 and 44). To insulate the transistors, a layer (22), which is also closed in the manner of a frame, of conductive material is provided which acts as insulating gate. This also results in space-saving isolation of the transistors. In production, a self-aligning gate technique is used, the layer (22) being produced at the same time as the gates (24, 26). A single mask setting can be used for making a plurality of diffusions. <IMAGE>
SE7606368A 1975-06-11 1976-06-04 INTEGRATED CIRCUIT AND SET FOR ITS MANUFACTURING SE416599B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58587475A 1975-06-11 1975-06-11

Publications (2)

Publication Number Publication Date
SE7606368L true SE7606368L (en) 1976-12-12
SE416599B SE416599B (en) 1981-01-19

Family

ID=24343323

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7606368A SE416599B (en) 1975-06-11 1976-06-04 INTEGRATED CIRCUIT AND SET FOR ITS MANUFACTURING

Country Status (15)

Country Link
JP (1) JPS5234677A (en)
AU (1) AU497683B2 (en)
BE (1) BE842774A (en)
BR (1) BR7603615A (en)
CA (1) CA1057413A (en)
CH (1) CH620049A5 (en)
DE (1) DE2625576A1 (en)
FR (1) FR2314583A1 (en)
GB (1) GB1526503A (en)
HU (1) HU175524B (en)
IN (1) IN144541B (en)
IT (1) IT1079501B (en)
NL (1) NL7606272A (en)
SE (1) SE416599B (en)
YU (1) YU139376A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
JPH02168666A (en) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp Complementary semiconductor device and manufacture thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (en) * 1969-03-25 1970-09-29
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
FR2129827B1 (en) * 1971-03-15 1976-09-03 Gen Electric
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5535869B2 (en) * 1972-05-15 1980-09-17
JPS4921080A (en) * 1972-06-15 1974-02-25

Also Published As

Publication number Publication date
FR2314583A1 (en) 1977-01-07
FR2314583B1 (en) 1982-09-17
GB1526503A (en) 1978-09-27
AU1467576A (en) 1977-12-15
JPS5234677A (en) 1977-03-16
SE416599B (en) 1981-01-19
AU497683B2 (en) 1978-12-21
DE2625576A1 (en) 1976-12-30
BE842774A (en) 1976-10-01
HU175524B (en) 1980-08-28
NL7606272A (en) 1976-12-14
YU139376A (en) 1983-04-27
JPS574105B2 (en) 1982-01-25
CH620049A5 (en) 1980-10-31
BR7603615A (en) 1977-02-01
IN144541B (en) 1978-05-13
CA1057413A (en) 1979-06-26
IT1079501B (en) 1985-05-13

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