HU175524B - Integrated circuit device, which contains n-channel and p-channel fets of isolated gate, and method to make the integrated circuit device - Google Patents
Integrated circuit device, which contains n-channel and p-channel fets of isolated gate, and method to make the integrated circuit deviceInfo
- Publication number
- HU175524B HU175524B HU76RA647A HURA000647A HU175524B HU 175524 B HU175524 B HU 175524B HU 76RA647 A HU76RA647 A HU 76RA647A HU RA000647 A HURA000647 A HU RA000647A HU 175524 B HU175524 B HU 175524B
- Authority
- HU
- Hungary
- Prior art keywords
- integrated circuit
- circuit device
- channel
- make
- isolated gate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58587475A | 1975-06-11 | 1975-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HU175524B true HU175524B (en) | 1980-08-28 |
Family
ID=24343323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HU76RA647A HU175524B (en) | 1975-06-11 | 1976-06-10 | Integrated circuit device, which contains n-channel and p-channel fets of isolated gate, and method to make the integrated circuit device |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS5234677A (en) |
| AU (1) | AU497683B2 (en) |
| BE (1) | BE842774A (en) |
| BR (1) | BR7603615A (en) |
| CA (1) | CA1057413A (en) |
| CH (1) | CH620049A5 (en) |
| DE (1) | DE2625576A1 (en) |
| FR (1) | FR2314583A1 (en) |
| GB (1) | GB1526503A (en) |
| HU (1) | HU175524B (en) |
| IN (1) | IN144541B (en) |
| IT (1) | IT1079501B (en) |
| NL (1) | NL7606272A (en) |
| SE (1) | SE416599B (en) |
| YU (1) | YU139376A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4081896A (en) * | 1977-04-11 | 1978-04-04 | Rca Corporation | Method of making a substrate contact for an integrated circuit |
| CA1188821A (en) * | 1982-09-03 | 1985-06-11 | Patrick W. Clarke | Power mosfet integrated circuit |
| US4860080A (en) * | 1987-03-31 | 1989-08-22 | General Electric Company | Isolation for transistor devices having a pilot structure |
| JPH02168666A (en) * | 1988-09-29 | 1990-06-28 | Mitsubishi Electric Corp | Complementary semiconductor device and manufacture thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6904543A (en) * | 1969-03-25 | 1970-09-29 | ||
| US3660735A (en) * | 1969-09-10 | 1972-05-02 | Sprague Electric Co | Complementary metal insulator silicon transistor pairs |
| US3608189A (en) * | 1970-01-07 | 1971-09-28 | Gen Electric | Method of making complementary field-effect transistors by single step diffusion |
| US3868721A (en) * | 1970-11-02 | 1975-02-25 | Motorola Inc | Diffusion guarded metal-oxide-silicon field effect transistors |
| FR2129827B1 (en) * | 1971-03-15 | 1976-09-03 | Gen Electric | |
| US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| JPS5535869B2 (en) * | 1972-05-15 | 1980-09-17 | ||
| JPS4921080A (en) * | 1972-06-15 | 1974-02-25 |
-
1976
- 1976-04-19 IN IN664/CAL/1976A patent/IN144541B/en unknown
- 1976-05-14 IT IT23310/76A patent/IT1079501B/en active
- 1976-05-27 CA CA253,457A patent/CA1057413A/en not_active Expired
- 1976-06-03 GB GB22962/76A patent/GB1526503A/en not_active Expired
- 1976-06-04 SE SE7606368A patent/SE416599B/en unknown
- 1976-06-05 DE DE19762625576 patent/DE2625576A1/en not_active Withdrawn
- 1976-06-07 BR BR7603615A patent/BR7603615A/en unknown
- 1976-06-07 YU YU01393/76A patent/YU139376A/en unknown
- 1976-06-07 AU AU14675/76A patent/AU497683B2/en not_active Expired
- 1976-06-09 CH CH730976A patent/CH620049A5/en not_active IP Right Cessation
- 1976-06-09 BE BE7000833A patent/BE842774A/en unknown
- 1976-06-10 HU HU76RA647A patent/HU175524B/en unknown
- 1976-06-10 JP JP51068632A patent/JPS5234677A/en active Granted
- 1976-06-10 NL NL7606272A patent/NL7606272A/en not_active Application Discontinuation
- 1976-06-10 FR FR7617582A patent/FR2314583A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU1467576A (en) | 1977-12-15 |
| SE416599B (en) | 1981-01-19 |
| FR2314583A1 (en) | 1977-01-07 |
| CA1057413A (en) | 1979-06-26 |
| AU497683B2 (en) | 1978-12-21 |
| DE2625576A1 (en) | 1976-12-30 |
| IT1079501B (en) | 1985-05-13 |
| SE7606368L (en) | 1976-12-12 |
| JPS5234677A (en) | 1977-03-16 |
| YU139376A (en) | 1983-04-27 |
| FR2314583B1 (en) | 1982-09-17 |
| NL7606272A (en) | 1976-12-14 |
| JPS574105B2 (en) | 1982-01-25 |
| IN144541B (en) | 1978-05-13 |
| CH620049A5 (en) | 1980-10-31 |
| GB1526503A (en) | 1978-09-27 |
| BR7603615A (en) | 1977-02-01 |
| BE842774A (en) | 1976-10-01 |
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