BR7603615A - Dispositivo de circuito integrado e processo de fabricar um dispositivo e circuito integrado semicondutor - Google Patents

Dispositivo de circuito integrado e processo de fabricar um dispositivo e circuito integrado semicondutor

Info

Publication number
BR7603615A
BR7603615A BR7603615A BR7603615A BR7603615A BR 7603615 A BR7603615 A BR 7603615A BR 7603615 A BR7603615 A BR 7603615A BR 7603615 A BR7603615 A BR 7603615A BR 7603615 A BR7603615 A BR 7603615A
Authority
BR
Brazil
Prior art keywords
circuit
manufacturing
integrated
semiconductor integrated
semiconductor
Prior art date
Application number
BR7603615A
Other languages
English (en)
Inventor
A Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BR7603615A publication Critical patent/BR7603615A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
BR7603615A 1975-06-11 1976-06-07 Dispositivo de circuito integrado e processo de fabricar um dispositivo e circuito integrado semicondutor BR7603615A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58587475A 1975-06-11 1975-06-11

Publications (1)

Publication Number Publication Date
BR7603615A true BR7603615A (pt) 1977-02-01

Family

ID=24343323

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7603615A BR7603615A (pt) 1975-06-11 1976-06-07 Dispositivo de circuito integrado e processo de fabricar um dispositivo e circuito integrado semicondutor

Country Status (15)

Country Link
JP (1) JPS5234677A (pt)
AU (1) AU497683B2 (pt)
BE (1) BE842774A (pt)
BR (1) BR7603615A (pt)
CA (1) CA1057413A (pt)
CH (1) CH620049A5 (pt)
DE (1) DE2625576A1 (pt)
FR (1) FR2314583A1 (pt)
GB (1) GB1526503A (pt)
HU (1) HU175524B (pt)
IN (1) IN144541B (pt)
IT (1) IT1079501B (pt)
NL (1) NL7606272A (pt)
SE (1) SE416599B (pt)
YU (1) YU139376A (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (pt) * 1969-03-25 1970-09-29
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
FR2129827B1 (pt) * 1971-03-15 1976-09-03 Gen Electric
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5535869B2 (pt) * 1972-05-15 1980-09-17
JPS4921080A (pt) * 1972-06-15 1974-02-25

Also Published As

Publication number Publication date
AU1467576A (en) 1977-12-15
FR2314583A1 (fr) 1977-01-07
IN144541B (pt) 1978-05-13
CA1057413A (en) 1979-06-26
FR2314583B1 (pt) 1982-09-17
JPS5234677A (en) 1977-03-16
IT1079501B (it) 1985-05-13
BE842774A (nl) 1976-10-01
CH620049A5 (en) 1980-10-31
AU497683B2 (en) 1978-12-21
YU139376A (en) 1983-04-27
HU175524B (hu) 1980-08-28
DE2625576A1 (de) 1976-12-30
SE7606368L (sv) 1976-12-12
NL7606272A (nl) 1976-12-14
JPS574105B2 (pt) 1982-01-25
SE416599B (sv) 1981-01-19
GB1526503A (en) 1978-09-27

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