CA2505014A1 - Encapsulage hermetique d'elements electro-optiques organiques - Google Patents

Encapsulage hermetique d'elements electro-optiques organiques Download PDF

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Publication number
CA2505014A1
CA2505014A1 CA002505014A CA2505014A CA2505014A1 CA 2505014 A1 CA2505014 A1 CA 2505014A1 CA 002505014 A CA002505014 A CA 002505014A CA 2505014 A CA2505014 A CA 2505014A CA 2505014 A1 CA2505014 A1 CA 2505014A1
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CA
Canada
Prior art keywords
layer
vitreous structure
depositing
organic
vitreous
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Abandoned
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CA002505014A
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English (en)
Inventor
Clemens Ottermann
Oliver Fritz
Dietrich Mund
Joern Pommerehne
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Schott AG
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Individual
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Publication date
Priority claimed from DE10222964A external-priority patent/DE10222964B4/de
Priority claimed from DE10222609A external-priority patent/DE10222609B4/de
Application filed by Individual filed Critical Individual
Publication of CA2505014A1 publication Critical patent/CA2505014A1/fr
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
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    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
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    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K50/84—Passivation; Containers; Encapsulations
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
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    • C03C2217/21—Oxides
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    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
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    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
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    • C03C2218/30—Aspects of methods for coating glass not covered above
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    • C03C2218/328—Partly or completely removing a coating
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    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention vise à allonger la durée de vie d'éléments électro-optiques organiques. Le procédé selon l'invention de fabrication desdits éléments consiste ainsi à mettre en oeuvre un support (3), à appliquer une première couche conductrice (13), à appliquer au moins une couche (15) présentant au moins un matériau électro-optique organique, à appliquer une deuxième couche conductrice (17), et à déposer au moins une couche (7, 71, 72, , 7N) présentant une structure de type verre.
CA002505014A 2002-04-15 2003-04-15 Encapsulage hermetique d'elements electro-optiques organiques Abandoned CA2505014A1 (fr)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
DE20205830.1 2002-04-15
DE20205830 2002-04-15
DE10222964A DE10222964B4 (de) 2002-04-15 2002-05-23 Verfahren zur Gehäusebildung bei elektronischen Bauteilen sowie so hermetisch verkapselte elektronische Bauteile
DE10222609A DE10222609B4 (de) 2002-04-15 2002-05-23 Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
DE10222609.1 2002-05-23
DE10222958.9 2002-05-23
DE10222958A DE10222958B4 (de) 2002-04-15 2002-05-23 Verfahren zur Herstellung eines organischen elektro-optischen Elements und organisches elektro-optisches Element
DE10222964.3 2002-05-23
DE10252787.3 2002-11-13
DE10252787A DE10252787A1 (de) 2002-04-15 2002-11-13 Verfahren zur Herstellung eines Kopierschutzes für eine elektronische Schaltung
DE10301559A DE10301559A1 (de) 2002-04-15 2003-01-16 Verfahren zur Herstellung eines Erzeugnisses mit einer strukturierten Oberfläche
DE10301559.0 2003-01-16
PCT/EP2003/003883 WO2003088370A2 (fr) 2002-04-15 2003-04-15 Encapsulage hermetique d'elements electro-optiques organiques

Publications (1)

Publication Number Publication Date
CA2505014A1 true CA2505014A1 (fr) 2003-10-23

Family

ID=44243116

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CA002505014A Abandoned CA2505014A1 (fr) 2002-04-15 2003-04-15 Encapsulage hermetique d'elements electro-optiques organiques

Country Status (7)

Country Link
EP (1) EP1495501A2 (fr)
JP (1) JP2005527076A (fr)
CN (1) CN1659720A (fr)
AU (1) AU2003233974A1 (fr)
CA (1) CA2505014A1 (fr)
DE (1) DE10222958B4 (fr)
WO (1) WO2003088370A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11770950B2 (en) 2019-03-07 2023-09-26 Vitro Flat Glass Llc Borosilicate light extraction region

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10222609B4 (de) 2002-04-15 2008-07-10 Schott Ag Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
CA2480737A1 (fr) 2002-04-15 2003-10-23 Schott Ag Procede pour revetir des surfaces metalliques et substrat a surface metallique revetue
EP1495491B1 (fr) 2002-04-15 2020-12-16 Schott AG Procédé de liaison de substrats et élément composite
JP4138672B2 (ja) * 2003-03-27 2008-08-27 セイコーエプソン株式会社 電気光学装置の製造方法
JP2006269099A (ja) * 2005-03-22 2006-10-05 Pioneer Electronic Corp 有機ｅｌパネル製造装置、有機ｅｌパネル製造方法
DE202005011574U1 (de) 2005-07-22 2006-11-23 Aeg Gesellschaft für Moderne Informationssysteme mbH Flüssigkristallanzeige
KR100645705B1 (ko) 2006-01-27 2006-11-15 삼성에스디아이 주식회사 유기전계발광 표시장치 및 그 제조방법
DE102006016373A1 (de) 2006-04-05 2007-10-11 Merck Patent Gmbh Großflächige OLED's mit homogener Lichtemission
DE102006027393A1 (de) 2006-06-13 2007-12-20 Applied Materials Gmbh & Co. Kg Verkapselung für organisches Bauelement
JP2008004290A (ja) * 2006-06-20 2008-01-10 Nippon Hoso Kyokai <Nhk> 有機ｅｌ表示装置および有機ｅｌ表示装置の製造方法
US20080290798A1 (en) * 2007-05-22 2008-11-27 Mark Alejandro Quesada LLT barrier layer for top emission display device, method and apparatus
JP5162179B2 (ja) * 2007-07-31 2013-03-13 住友化学株式会社 発光素子およびその製造方法並びに照明装置
DE102007050680A1 (de) * 2007-10-22 2009-05-28 Leonhard Kurz Gmbh & Co. Kg Flächengebilde, insbesondere fotovoltaisches Element auf Polymerbasis
DE102009056756B4 (de) 2009-12-04 2020-10-15 Schott Ag Material für Batterie-Elektroden, dieses enthaltende Batterie-Elektroden sowie Batterien mit diesen Elektroden und Verfahren zu deren Herstellung
KR101931177B1 (ko) 2012-03-02 2018-12-21 삼성디스플레이 주식회사 유기 발광 표시 장치
EP3338520A1 (fr) * 2015-08-21 2018-06-27 Corning Incorporated Ensembles substrat en verre présentant de faibles propriétés diélectriques
EP3258516A1 (fr) * 2016-06-15 2017-12-20 odelo GmbH Unite d'éclairage comprenant une led organique (oled) et son procédé de production
EP3258515A1 (fr) * 2016-06-15 2017-12-20 odelo GmbH Unite d'eclairage comprenant une oled organique pour des applications automobiles et son procede de production
CN111378934B (zh) * 2020-03-30 2021-03-30 中国科学院上海光学精密机械研究所 提升电子束蒸镀薄膜元件的光谱和应力时效稳定性的镀膜方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104418A (en) * 1975-09-23 1978-08-01 International Business Machines Corporation Glass layer fabrication
JP2793383B2 (ja) * 1991-06-24 1998-09-03 出光興産株式会社 有機エレクトロルミネッセンス素子
JP2813499B2 (ja) * 1991-09-30 1998-10-22 出光興産株式会社 有機ｅｌ素子
JPH0696858A (ja) * 1992-09-10 1994-04-08 Toppan Printing Co Ltd 有機薄膜ｅｌ素子
JPH06267654A (ja) * 1993-03-15 1994-09-22 Fuji Electric Co Ltd エレクトロルミネセンスパネルの製造方法
JP2797905B2 (ja) * 1993-06-25 1998-09-17 凸版印刷株式会社 有機薄膜ｅｌ素子
JP3277965B2 (ja) * 1993-09-20 2002-04-22 東洋紡績株式会社 エレクトロルミネッセンスパネル
JPH07169567A (ja) * 1993-12-16 1995-07-04 Idemitsu Kosan Co Ltd 有機ｅｌ素子
JP3577117B2 (ja) * 1994-10-07 2004-10-13 Ｔｄｋ株式会社 有機エレクトロルミネセンス素子の製法
DE4438359C2 (de) * 1994-10-27 2001-10-04 Schott Glas Behälter aus Kunststoff mit einer Sperrbeschichtung
JP3248374B2 (ja) * 1994-12-13 2002-01-21 株式会社日本触媒 ガスバリア性積層体
US5607789A (en) * 1995-01-23 1997-03-04 Duracell Inc. Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same
JPH09204981A (ja) * 1996-01-26 1997-08-05 Nippon Steel Chem Co Ltd 有機ｅｌ素子
JP4011649B2 (ja) * 1996-06-11 2007-11-21 出光興産株式会社 多色発光装置およびその製造方法
JP2950240B2 (ja) * 1996-06-24 1999-09-20 関西日本電気株式会社 電界発光灯
JP3900617B2 (ja) * 1997-09-17 2007-04-04 カシオ計算機株式会社 発光素子及び発光素子用の保護材料
JPH11144864A (ja) * 1997-11-13 1999-05-28 Mitsubishi Chemical Corp 有機電界発光素子及びその製造方法
US6146225A (en) * 1998-07-30 2000-11-14 Agilent Technologies, Inc. Transparent, flexible permeability barrier for organic electroluminescent devices
US6268695B1 (en) * 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
JP2000223265A (ja) * 1999-02-02 2000-08-11 Toray Ind Inc 発光素子
JP2000231992A (ja) * 1999-02-09 2000-08-22 Stanley Electric Co Ltd 面光源装置
JP2000277253A (ja) * 1999-03-26 2000-10-06 Canon Inc 発光素子、発光装置、表示装置、露光装置及び画像形成装置
US6949825B1 (en) * 1999-07-09 2005-09-27 Osram Opto Semiconductor Gmbh & Co. Ohg Laminates for encapsulating devices
JP2001052863A (ja) * 1999-08-05 2001-02-23 Auto Network Gijutsu Kenkyusho:Kk 有機ｅｌ素子の製造方法及び有機ｅｌ素子
US6153271A (en) * 1999-12-30 2000-11-28 General Vacuum, Inc. Electron beam evaporation of transparent indium tin oxide
JP4556282B2 (ja) * 2000-03-31 2010-10-06 株式会社デンソー 有機ｅｌ素子およびその製造方法
US6602395B1 (en) * 2000-04-11 2003-08-05 Innovative Technology Licensing, Llc Patterning of polymer light emitting devices using electrochemical polymerization
JP2001307873A (ja) * 2000-04-21 2001-11-02 Toppan Printing Co Ltd 有機エレクトロルミネッセンス表示素子およびその製造方法
US20010052752A1 (en) * 2000-04-25 2001-12-20 Ghosh Amalkumar P. Thin film encapsulation of organic light emitting diode devices
JP4324718B2 (ja) * 2000-05-30 2009-09-02 カシオ計算機株式会社 電界発光素子
JP2002033186A (ja) * 2000-07-17 2002-01-31 Stanley Electric Co Ltd 有機発光素子
JP2002063985A (ja) * 2000-08-22 2002-02-28 Nec Corp 有機エレクトロルミネッセンス素子
JP2002100469A (ja) * 2000-09-25 2002-04-05 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11770950B2 (en) 2019-03-07 2023-09-26 Vitro Flat Glass Llc Borosilicate light extraction region

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WO2003088370A3 (fr) 2004-06-17
CN1659720A (zh) 2005-08-24
DE10222958A1 (de) 2003-10-30
JP2005527076A (ja) 2005-09-08
EP1495501A2 (fr) 2005-01-12
DE10222958B4 (de) 2007-08-16
WO2003088370A2 (fr) 2003-10-23
AU2003233974A1 (en) 2003-10-27

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