CA2351368A1 - Cross under metal wiring structure for self-scanning light-emitting device - Google Patents
Cross under metal wiring structure for self-scanning light-emitting device Download PDFInfo
- Publication number
- CA2351368A1 CA2351368A1 CA002351368A CA2351368A CA2351368A1 CA 2351368 A1 CA2351368 A1 CA 2351368A1 CA 002351368 A CA002351368 A CA 002351368A CA 2351368 A CA2351368 A CA 2351368A CA 2351368 A1 CA2351368 A1 CA 2351368A1
- Authority
- CA
- Canada
- Prior art keywords
- light
- pnpn
- control electrodes
- element array
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000002184 metal Substances 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000013459 approach Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 241000863814 Thyris Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
- B41J2002/453—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays self-scanning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Led Devices (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11/266867 | 1999-09-21 | ||
| JP26686799A JP4362905B2 (ja) | 1999-09-21 | 1999-09-21 | 自己走査型発光装置、書き込み用光源および光プリンタ |
| PCT/JP2000/006373 WO2001021412A1 (fr) | 1999-09-21 | 2000-09-19 | Dispositif luminescent a auto-balayage: structure d'interconnexion metallique croisee |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2351368A1 true CA2351368A1 (en) | 2001-03-29 |
Family
ID=17436764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002351368A Abandoned CA2351368A1 (en) | 1999-09-21 | 2000-09-19 | Cross under metal wiring structure for self-scanning light-emitting device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6507057B1 (enExample) |
| EP (1) | EP1142721A4 (enExample) |
| JP (1) | JP4362905B2 (enExample) |
| KR (1) | KR20010101038A (enExample) |
| CN (1) | CN1171736C (enExample) |
| CA (1) | CA2351368A1 (enExample) |
| TW (1) | TW507385B (enExample) |
| WO (1) | WO2001021412A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011127568A1 (en) * | 2010-04-13 | 2011-10-20 | Gan Systems Inc. | High density gallium nitride devices using island topology |
| US9064947B2 (en) | 2009-08-04 | 2015-06-23 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
| US9153509B2 (en) | 2009-08-04 | 2015-10-06 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4292747B2 (ja) * | 2002-02-25 | 2009-07-08 | 富士ゼロックス株式会社 | 発光サイリスタおよび自己走査型発光素子アレイ |
| TWI246783B (en) * | 2003-09-24 | 2006-01-01 | Matsushita Electric Works Ltd | Light-emitting device and its manufacturing method |
| US6943578B1 (en) | 2004-03-31 | 2005-09-13 | International Business Machines Corporation | Method and application of PICA (picosecond imaging circuit analysis) for high current pulsed phenomena |
| JP4882236B2 (ja) * | 2004-04-28 | 2012-02-22 | 富士ゼロックス株式会社 | 電極コンタクト構造およびその製造方法 |
| CN101452976B (zh) * | 2007-12-06 | 2011-03-30 | 泰谷光电科技股份有限公司 | 高亮度发光二极管结构 |
| JP5636655B2 (ja) | 2009-09-16 | 2014-12-10 | 富士ゼロックス株式会社 | 発光チップ、プリントヘッドおよび画像形成装置 |
| CN105280556B (zh) * | 2014-07-22 | 2018-02-23 | 环视先进数字显示无锡有限公司 | 一种led显示模组的集成方法 |
| JP6840969B2 (ja) * | 2016-09-21 | 2021-03-10 | セイコーエプソン株式会社 | Memsデバイス、液体噴射ヘッド、及び、液体噴射装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2784010B2 (ja) | 1988-09-30 | 1998-08-06 | 日本板硝子株式会社 | 自己走査型発光素子アレイ |
| JP2790631B2 (ja) | 1988-07-01 | 1998-08-27 | 日本板硝子株式会社 | 自己走査形発光素子アレイ |
| JP2784011B2 (ja) | 1988-09-30 | 1998-08-06 | 日本板硝子株式会社 | 自己走査型発光素子アレイ |
| JP2577034B2 (ja) | 1988-03-18 | 1997-01-29 | 日本板硝子株式会社 | 自己走査形発光素子アレイおよびその駆動方法 |
| JP2577089B2 (ja) | 1988-11-10 | 1997-01-29 | 日本板硝子株式会社 | 発光装置およびその駆動方法 |
| JP2784025B2 (ja) * | 1989-02-07 | 1998-08-06 | 日本板硝子株式会社 | 光走査装置 |
| JP2785542B2 (ja) * | 1991-10-02 | 1998-08-13 | 日本電気株式会社 | 半導体拡散層抵抗 |
| WO1997012405A1 (en) * | 1995-09-25 | 1997-04-03 | Nippon Sheet Glass Co., Ltd. | Surface light-emitting element and self-scanning type light-emitting device |
| JP3595044B2 (ja) * | 1995-10-05 | 2004-12-02 | 日本板硝子株式会社 | 自己走査型発光装置およびこれを用いた光プリンタ装置 |
| JP3647968B2 (ja) * | 1996-04-10 | 2005-05-18 | 日本板硝子株式会社 | 自己走査型発光装置 |
-
1999
- 1999-09-21 JP JP26686799A patent/JP4362905B2/ja not_active Expired - Fee Related
-
2000
- 2000-09-19 CN CNB008017522A patent/CN1171736C/zh not_active Expired - Lifetime
- 2000-09-19 EP EP00961073A patent/EP1142721A4/en not_active Withdrawn
- 2000-09-19 KR KR1020017006349A patent/KR20010101038A/ko not_active Withdrawn
- 2000-09-19 WO PCT/JP2000/006373 patent/WO2001021412A1/ja not_active Ceased
- 2000-09-19 US US09/856,083 patent/US6507057B1/en not_active Expired - Lifetime
- 2000-09-19 CA CA002351368A patent/CA2351368A1/en not_active Abandoned
- 2000-09-20 TW TW089119323A patent/TW507385B/zh not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9064947B2 (en) | 2009-08-04 | 2015-06-23 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
| US9153509B2 (en) | 2009-08-04 | 2015-10-06 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
| US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
| WO2011127568A1 (en) * | 2010-04-13 | 2011-10-20 | Gan Systems Inc. | High density gallium nitride devices using island topology |
| US8791508B2 (en) | 2010-04-13 | 2014-07-29 | Gan Systems Inc. | High density gallium nitride devices using island topology |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001021412A1 (fr) | 2001-03-29 |
| CN1171736C (zh) | 2004-10-20 |
| KR20010101038A (ko) | 2001-11-14 |
| JP2001094153A (ja) | 2001-04-06 |
| EP1142721A4 (en) | 2003-06-25 |
| EP1142721A1 (en) | 2001-10-10 |
| JP4362905B2 (ja) | 2009-11-11 |
| CN1321123A (zh) | 2001-11-07 |
| TW507385B (en) | 2002-10-21 |
| US6507057B1 (en) | 2003-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 20050919 |