BRPI0918960A2 - sistema eletrônico de baixa potência que utiliza memória magnética não-volátil - Google Patents
sistema eletrônico de baixa potência que utiliza memória magnética não-volátilInfo
- Publication number
- BRPI0918960A2 BRPI0918960A2 BRPI0918960A BRPI0918960A BRPI0918960A2 BR PI0918960 A2 BRPI0918960 A2 BR PI0918960A2 BR PI0918960 A BRPI0918960 A BR PI0918960A BR PI0918960 A BRPI0918960 A BR PI0918960A BR PI0918960 A2 BRPI0918960 A2 BR PI0918960A2
- Authority
- BR
- Brazil
- Prior art keywords
- low power
- electronic system
- magnetic memory
- power electronic
- system utilizing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/325—Power saving in peripheral device
- G06F1/3275—Power saving in memory, e.g. RAM, cache
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/50—Reducing energy consumption in communication networks in wire-line communication networks, e.g. low power modes or reduced link rate
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Power Sources (AREA)
- Hall/Mr Elements (AREA)
- Memory System (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/235,933 US8719610B2 (en) | 2008-09-23 | 2008-09-23 | Low power electronic system architecture using non-volatile magnetic memory |
PCT/US2009/057458 WO2010039458A1 (en) | 2008-09-23 | 2009-09-18 | Low power electronic system using non-volatile magnetic memory |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0918960A2 true BRPI0918960A2 (pt) | 2016-07-05 |
Family
ID=41396150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0918960A BRPI0918960A2 (pt) | 2008-09-23 | 2009-09-18 | sistema eletrônico de baixa potência que utiliza memória magnética não-volátil |
Country Status (12)
Country | Link |
---|---|
US (1) | US8719610B2 (pt) |
EP (1) | EP2350768B1 (pt) |
JP (2) | JP5813508B2 (pt) |
KR (1) | KR101262105B1 (pt) |
CN (1) | CN102160016B (pt) |
BR (1) | BRPI0918960A2 (pt) |
CA (1) | CA2736272C (pt) |
ES (1) | ES2543360T3 (pt) |
MX (1) | MX2011002703A (pt) |
RU (2) | RU2011116190A (pt) |
TW (1) | TWI413895B (pt) |
WO (1) | WO2010039458A1 (pt) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5839474B2 (ja) * | 2011-03-24 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
US20120254526A1 (en) * | 2011-03-28 | 2012-10-04 | Advanced Micro Devices, Inc. | Routing, security and storage of sensitive data in random access memory (ram) |
US9400545B2 (en) | 2011-12-22 | 2016-07-26 | Intel Corporation | Method, apparatus, and system for energy efficiency and energy conservation including autonomous hardware-based deep power down in devices |
US9183910B2 (en) | 2012-05-31 | 2015-11-10 | Samsung Electronics Co., Ltd. | Semiconductor memory devices for alternately selecting bit lines |
CN104081314A (zh) * | 2012-07-27 | 2014-10-01 | 惠普发展公司,有限责任合伙企业 | 实现计算设备中的关机状态 |
US9244853B2 (en) * | 2012-08-10 | 2016-01-26 | Qualcomm Incorporated | Tunable multi-tiered STT-MRAM cache for multi-core processors |
KR102049265B1 (ko) | 2012-11-30 | 2019-11-28 | 삼성전자주식회사 | 최대절전 모드를 가지는 시스템 및 그 동작방법 |
US20150316971A1 (en) * | 2014-05-02 | 2015-11-05 | Avalanche Technology, Inc. | Method and apparatus to reduce power consumption of mobile and portable devices with non-volatile memories |
US9959124B1 (en) * | 2014-09-26 | 2018-05-01 | Apple Inc. | Secure bypass of low-level configuration in reconfiguration of a computing system |
CN106406493B (zh) * | 2015-07-30 | 2020-04-28 | 华为技术有限公司 | 能降低功耗的电子装置及降低电子装置功耗的方法 |
TWI569129B (zh) | 2015-12-01 | 2017-02-01 | 財團法人工業技術研究院 | 系統暫停方法、系統回復方法及應用其之電腦系統 |
US10341952B2 (en) * | 2016-03-14 | 2019-07-02 | Apple Inc. | Low power LTE (LP-LTE) paging monitoring |
FR3066667B1 (fr) * | 2017-05-19 | 2019-06-07 | Paragon Id | " procede et systeme de transmission serie de donnees " |
KR20210039075A (ko) | 2019-10-01 | 2021-04-09 | 삼성전자주식회사 | 비휘발성 메모리 장치의 초기화 제어 방법 및 비휘발성 메모리 장치를 포함하는 메모리 시스템 |
US11630502B2 (en) * | 2021-07-30 | 2023-04-18 | Advanced Micro Devices, Inc. | Hierarchical state save and restore for device with varying power states |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3959159B2 (ja) * | 1997-09-04 | 2007-08-15 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 情報処理システム用拡張ユニット、拡張ユニットに搭載される情報処理システム、及び情報処理システムの制御方法 |
UA57812C2 (uk) * | 1997-11-04 | 2003-07-15 | Джорджія Тек Ресерч Корпорейшн | Система та спосіб передачі цифрового відеосигналу та даних через канал зв'язку |
US6438668B1 (en) * | 1999-09-30 | 2002-08-20 | Apple Computer, Inc. | Method and apparatus for reducing power consumption in a digital processing system |
US6449683B1 (en) * | 1999-12-14 | 2002-09-10 | Intel Corporation | Using non-volatile memory for power management in a computer |
CN1270323C (zh) | 2001-06-19 | 2006-08-16 | 松下电器产业株式会社 | 磁性存储器的驱动方法 |
JP2003068864A (ja) * | 2001-08-30 | 2003-03-07 | Hitachi Ltd | 半導体集積回路装置 |
US6732241B2 (en) * | 2001-09-07 | 2004-05-04 | Hewlett-Packard Development Company, L.P. | Technique for migrating data between storage devices for reduced power consumption |
JP2003115578A (ja) | 2001-10-05 | 2003-04-18 | Canon Inc | 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ |
US6747318B1 (en) * | 2001-12-13 | 2004-06-08 | Lsi Logic Corporation | Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides |
JP2003209616A (ja) * | 2002-01-15 | 2003-07-25 | Fujitsu Ltd | 半導体装置および携帯端末装置 |
TW533539B (en) * | 2002-06-13 | 2003-05-21 | Intelligent Sources Dev Corp | A scaled MOSFET device and its fabricating method |
US7313684B2 (en) * | 2002-08-14 | 2007-12-25 | T1 Technologies Limited | Method and apparatus for booting a computer system |
US20080059785A1 (en) * | 2002-08-14 | 2008-03-06 | Ti Technologies Limited | Method and apparatus for shutting down a computer system |
JP2004118921A (ja) * | 2002-09-25 | 2004-04-15 | Toshiba Corp | 磁気ランダムアクセスメモリ |
JP2004133969A (ja) * | 2002-10-08 | 2004-04-30 | Renesas Technology Corp | 半導体装置 |
JP2006526831A (ja) | 2003-06-03 | 2006-11-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 不揮発性メモリからのブート |
JP4281421B2 (ja) | 2003-06-06 | 2009-06-17 | ソニー株式会社 | 情報処理システム及びその制御方法、並びにコンピュータ・プログラム |
JP4095501B2 (ja) * | 2003-06-25 | 2008-06-04 | インターナショナル・ビジネス・マシーンズ・コーポレーション | コンピュータ装置、無線アクセスポイント、無線ネットワークを介した電源投入方法、フレーム聴取方法、フレーム送信方法、およびプログラム |
US7369815B2 (en) * | 2003-09-19 | 2008-05-06 | Qualcomm Incorporated | Power collapse for a wireless terminal |
US7521785B2 (en) * | 2003-12-23 | 2009-04-21 | Tessera, Inc. | Packaged systems with MRAM |
US7442583B2 (en) * | 2004-12-17 | 2008-10-28 | International Business Machines Corporation | Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable |
WO2006080908A1 (en) | 2005-01-25 | 2006-08-03 | Chien-Chiang Chan | A single chip having a magnetoresistive memory |
US20100017637A1 (en) * | 2005-05-25 | 2010-01-21 | Nxp B.V. | Portable electronic terminal and method therefor |
US7262069B2 (en) * | 2005-06-07 | 2007-08-28 | Freescale Semiconductor, Inc. | 3-D inductor and transformer devices in MRAM embedded integrated circuits |
US7264985B2 (en) * | 2005-08-31 | 2007-09-04 | Freescale Semiconductor, Inc. | Passive elements in MRAM embedded integrated circuits |
US7755153B2 (en) | 2006-01-13 | 2010-07-13 | Macronix International Co. Ltd. | Structure and method for a magnetic memory device with proximity writing |
US7345912B2 (en) * | 2006-06-01 | 2008-03-18 | Grandis, Inc. | Method and system for providing a magnetic memory structure utilizing spin transfer |
US7379327B2 (en) * | 2006-06-26 | 2008-05-27 | Grandis, Inc. | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins |
US8019929B2 (en) * | 2006-09-13 | 2011-09-13 | Rohm Co., Ltd. | Data processing apparatus and data control circuit for use therein |
JP2008210358A (ja) | 2006-09-13 | 2008-09-11 | Rohm Co Ltd | データ処理装置及びこれに用いるデータ制御回路 |
JP4685040B2 (ja) * | 2007-01-24 | 2011-05-18 | パナソニック株式会社 | 半導体集積回路及びその電源供給制御方法 |
JP2008198311A (ja) | 2007-02-15 | 2008-08-28 | Renesas Technology Corp | 磁気記憶集積回路装置 |
JP2008218649A (ja) | 2007-03-02 | 2008-09-18 | Renesas Technology Corp | 半導体装置およびその製造方法ならびに磁気メモリ素子 |
US7494846B2 (en) * | 2007-03-09 | 2009-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Design techniques for stacking identical memory dies |
US8114345B2 (en) * | 2008-02-08 | 2012-02-14 | Ethicon Endo-Surgery, Inc. | System and method of sterilizing an implantable medical device |
US7872936B2 (en) * | 2008-09-17 | 2011-01-18 | Qimonda Ag | System and method for packaged memory |
KR101004676B1 (ko) | 2008-12-05 | 2011-01-04 | 주식회사 하이닉스반도체 | 반도체 소자의 내부전압 발생기 |
US8423092B2 (en) * | 2008-12-12 | 2013-04-16 | Qualcomm Incorporated | Power management in a mobile device |
KR101912223B1 (ko) * | 2011-08-16 | 2019-01-04 | 삼성전자주식회사 | 적층 자기 램 장치 및 이를 포함하는 메모리 시스템 |
-
2008
- 2008-09-23 US US12/235,933 patent/US8719610B2/en active Active
-
2009
- 2009-09-18 CA CA2736272A patent/CA2736272C/en active Active
- 2009-09-18 BR BRPI0918960A patent/BRPI0918960A2/pt not_active Application Discontinuation
- 2009-09-18 WO PCT/US2009/057458 patent/WO2010039458A1/en active Application Filing
- 2009-09-18 RU RU2011116190/08A patent/RU2011116190A/ru unknown
- 2009-09-18 ES ES09792707.3T patent/ES2543360T3/es active Active
- 2009-09-18 MX MX2011002703A patent/MX2011002703A/es not_active Application Discontinuation
- 2009-09-18 KR KR1020117009250A patent/KR101262105B1/ko active IP Right Grant
- 2009-09-18 CN CN200980137236.7A patent/CN102160016B/zh active Active
- 2009-09-18 EP EP20090792707 patent/EP2350768B1/en active Active
- 2009-09-18 JP JP2011529126A patent/JP5813508B2/ja active Active
- 2009-09-23 TW TW098132140A patent/TWI413895B/zh active
-
2014
- 2014-04-15 RU RU2014115184A patent/RU2616171C2/ru active
- 2014-09-04 JP JP2014180233A patent/JP6042386B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
MX2011002703A (es) | 2011-04-21 |
EP2350768B1 (en) | 2015-05-13 |
JP6042386B2 (ja) | 2016-12-14 |
CA2736272C (en) | 2016-04-05 |
RU2616171C2 (ru) | 2017-04-12 |
US20100077244A1 (en) | 2010-03-25 |
US8719610B2 (en) | 2014-05-06 |
JP2012504278A (ja) | 2012-02-16 |
EP2350768A1 (en) | 2011-08-03 |
ES2543360T3 (es) | 2015-08-18 |
CN102160016A (zh) | 2011-08-17 |
JP2015038738A (ja) | 2015-02-26 |
RU2014115184A (ru) | 2015-11-10 |
WO2010039458A1 (en) | 2010-04-08 |
KR20110082000A (ko) | 2011-07-15 |
RU2011116190A (ru) | 2012-10-27 |
JP5813508B2 (ja) | 2015-11-17 |
TW201027323A (en) | 2010-07-16 |
CN102160016B (zh) | 2015-04-01 |
TWI413895B (zh) | 2013-11-01 |
KR101262105B1 (ko) | 2013-05-14 |
CA2736272A1 (en) | 2010-04-08 |
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Legal Events
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B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
B09B | Patent application refused [chapter 9.2 patent gazette] | ||
B12B | Appeal against refusal [chapter 12.2 patent gazette] | ||
B350 | Update of information on the portal [chapter 15.35 patent gazette] |