BR0314276A - Método para cobertura seletiva de uma superfìcie microusinada - Google Patents

Método para cobertura seletiva de uma superfìcie microusinada

Info

Publication number
BR0314276A
BR0314276A BR0314276-0A BR0314276A BR0314276A BR 0314276 A BR0314276 A BR 0314276A BR 0314276 A BR0314276 A BR 0314276A BR 0314276 A BR0314276 A BR 0314276A
Authority
BR
Brazil
Prior art keywords
etchings
micro
negative photoresist
photoresist
exposure
Prior art date
Application number
BR0314276-0A
Other languages
English (en)
Inventor
Renato Conta
Irma Disegna
Original Assignee
Olivetti I Jet Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olivetti I Jet Spa filed Critical Olivetti I Jet Spa
Publication of BR0314276A publication Critical patent/BR0314276A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388Etch mask forming
    • B81C1/00412Mask characterised by its behaviour during the etching process, e.g. soluble masks
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

"MéTODO PARA COBERTURA SELETIVA DE UMA SUPERFìCIE MICROUSINADA". A presente invenção refere-se a uma matriz que possui gravações em uma superfície, primeiramente uma folha de fotorresiste negativo é colocada que, por meio de uma exposição e subseq³ente revelação, é deixada apenas acima das gravações; então, mediante o fotorresiste negativo, um fotorresiste positivo é aplicado, que é submetido à exposição e revelação para produzir geometrias funcionais depositadas no filme fino; subseq³entemente o fotorresiste positivo é removido em uma operação de 'elevação', e o fotorresiste negativo é retirado em uma operação de plasma, revelando assim as gravações.
BR0314276-0A 2002-09-12 2003-09-11 Método para cobertura seletiva de uma superfìcie microusinada BR0314276A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT000793A ITTO20020793A1 (it) 2002-09-12 2002-09-12 Metodo per ricoprire selettivamente una superficie microlavorata.
PCT/IT2003/000545 WO2004025726A2 (en) 2002-09-12 2003-09-11 Method for selectively covering a micro machined surface

Publications (1)

Publication Number Publication Date
BR0314276A true BR0314276A (pt) 2005-07-19

Family

ID=31986049

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0314276-0A BR0314276A (pt) 2002-09-12 2003-09-11 Método para cobertura seletiva de uma superfìcie microusinada

Country Status (12)

Country Link
US (1) US7255799B2 (pt)
EP (1) EP1546028B8 (pt)
JP (1) JP4559859B2 (pt)
KR (1) KR100997940B1 (pt)
CN (1) CN100439233C (pt)
AT (1) ATE553063T1 (pt)
AU (1) AU2003265164B2 (pt)
BR (1) BR0314276A (pt)
CA (1) CA2498669C (pt)
IT (1) ITTO20020793A1 (pt)
RU (1) RU2334304C2 (pt)
WO (1) WO2004025726A2 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988437B1 (ko) * 2007-09-21 2010-10-18 주식회사 엘지화학 네가티브 포토레지스트를 이용한 유리 또는 금속 식각방법 및 이를 이용한 클리쉐의 제조방법
CN101654217B (zh) * 2008-08-21 2011-09-14 博奥生物有限公司 一种制作微元件的方法
JP5370330B2 (ja) * 2010-10-01 2013-12-18 住友金属鉱山株式会社 半導体素子搭載用基板の製造方法
CN103224866A (zh) * 2013-04-28 2013-07-31 王惠莹 一种马铃薯白酒的酿制方法
JP6557447B2 (ja) * 2013-10-31 2019-08-07 日亜化学工業株式会社 半導体素子の製造方法
CN103560083B (zh) * 2013-11-18 2015-12-30 电子科技大学 一种用于非制冷红外焦平面探测器电极图形化的剥离工艺
WO2020214238A1 (en) * 2019-04-16 2020-10-22 Applied Materials, Inc. Method of thin film deposition in trenches
TWI792260B (zh) * 2021-04-09 2023-02-11 晶瑞光電股份有限公司 利用金屬掀離製程的半導體元件製造方法及其製成之半導體元件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154737A (en) * 1979-05-22 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of forming pattern
JPS616830A (ja) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JPS61142761A (ja) * 1984-12-17 1986-06-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62195146A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置の製造方法
US5091288A (en) * 1989-10-27 1992-02-25 Rockwell International Corporation Method of forming detector array contact bumps for improved lift off of excess metal
US5888845A (en) * 1996-05-02 1999-03-30 National Semiconductor Corporation Method of making high sensitivity micro-machined pressure sensors and acoustic transducers
JPH10168557A (ja) * 1996-12-09 1998-06-23 Hitachi Ltd V溝付基板の蒸着方法
JPH11112045A (ja) * 1997-09-30 1999-04-23 Fujitsu Ltd 微細パターン形成方法及びそれを利用した電子装置の製造方法
GB9819817D0 (en) * 1998-09-12 1998-11-04 Secr Defence Improvements relating to micro-machining
JP2001127155A (ja) * 1999-10-29 2001-05-11 Hitachi Ltd ビルドアップ基板、及びその製法

Also Published As

Publication number Publication date
RU2334304C2 (ru) 2008-09-20
WO2004025726A3 (en) 2005-04-28
US20050224453A1 (en) 2005-10-13
EP1546028B8 (en) 2012-05-23
KR100997940B1 (ko) 2010-12-02
CN1688504A (zh) 2005-10-26
EP1546028B1 (en) 2012-04-11
US7255799B2 (en) 2007-08-14
JP4559859B2 (ja) 2010-10-13
CA2498669A1 (en) 2004-03-25
ITTO20020793A1 (it) 2004-03-13
ATE553063T1 (de) 2012-04-15
JP2005539379A (ja) 2005-12-22
WO2004025726A2 (en) 2004-03-25
CA2498669C (en) 2013-02-19
AU2003265164A1 (en) 2004-04-30
RU2005110686A (ru) 2005-09-10
EP1546028A2 (en) 2005-06-29
AU2003265164B2 (en) 2010-06-03
KR20050047113A (ko) 2005-05-19
CN100439233C (zh) 2008-12-03

Similar Documents

Publication Publication Date Title
TW200700933A (en) Immersion lithography and treatment system thereof
TW200605326A (en) Forming a plurality of thin-film devices
TWI266970B (en) Scatterometry alignment for imprint lithography
JP2004003030A5 (pt)
TW200707125A (en) Immersion lithography and treatment method thereof
TWI329360B (en) Semiconductor device production method and semiconductor device
TW200616101A (en) Method for manufacturing semiconductor device
TW200625407A (en) Method for foring a finely patterned resist
EP1783821A4 (en) EXPOSURE SYSTEM AND METHOD FOR PRODUCING THE DEVICE
TW200604730A (en) Formation of discontinuous films employing on template dispense during lithography processes
TW200615712A (en) Removing apparatus, protective film forming apparatus, substrate processing system and removing method
TW200616144A (en) Method of forming narrowly spaced flash memory contact openings and lithography masks
TW200700932A (en) Lithography process with an enhanced depth-of-depth
ES2570737T3 (es) Método para conformar un diseño metálico sobre un sustrato
SA520411272B1 (ar) مواد مائعة بحجم النانو بقناة كالسيت
TW200500498A (en) Method for etching an aluminum layer using an amorphous carbon mask
WO2007041602A8 (en) Lithography verification using guard bands
BR0314276A (pt) Método para cobertura seletiva de uma superfìcie microusinada
ATE453739T1 (de) Entschichtungsverfahren
WO2011123433A3 (en) Method of slimming radiation-sensitive material lines in lithographic applications
WO2005061752A3 (en) Method for patterning films
EP1732371A3 (en) Method of forming a conductive pattern on a substrate
WO2015043261A1 (zh) 光刻胶的去除方法、曝光装置以及显示基板的制造方法
NL1025640A1 (nl) Werkwijze voor het vormen van een opening in een lichtabsorberende laag op een masker.
TW200504830A (en) Method providing an improved bi-layer photoresist pattern

Legal Events

Date Code Title Description
B25A Requested transfer of rights approved

Owner name: SICPA HOLDING S.A. (CH)

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]