ATE553063T1 - Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche - Google Patents

Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche

Info

Publication number
ATE553063T1
ATE553063T1 AT03795198T AT03795198T ATE553063T1 AT E553063 T1 ATE553063 T1 AT E553063T1 AT 03795198 T AT03795198 T AT 03795198T AT 03795198 T AT03795198 T AT 03795198T AT E553063 T1 ATE553063 T1 AT E553063T1
Authority
AT
Austria
Prior art keywords
micro
etchings
machined surface
negative photoresist
photoresist
Prior art date
Application number
AT03795198T
Other languages
English (en)
Inventor
Renato Conta
Irma Disegna
Original Assignee
Olivetti Personal Comp Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olivetti Personal Comp Spa filed Critical Olivetti Personal Comp Spa
Application granted granted Critical
Publication of ATE553063T1 publication Critical patent/ATE553063T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00412—Mask characterised by its behaviour during the etching process, e.g. soluble masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT03795198T 2002-09-12 2003-09-11 Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche ATE553063T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT000793A ITTO20020793A1 (it) 2002-09-12 2002-09-12 Metodo per ricoprire selettivamente una superficie microlavorata.
PCT/IT2003/000545 WO2004025726A2 (en) 2002-09-12 2003-09-11 Method for selectively covering a micro machined surface

Publications (1)

Publication Number Publication Date
ATE553063T1 true ATE553063T1 (de) 2012-04-15

Family

ID=31986049

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03795198T ATE553063T1 (de) 2002-09-12 2003-09-11 Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche

Country Status (12)

Country Link
US (1) US7255799B2 (de)
EP (1) EP1546028B8 (de)
JP (1) JP4559859B2 (de)
KR (1) KR100997940B1 (de)
CN (1) CN100439233C (de)
AT (1) ATE553063T1 (de)
AU (1) AU2003265164B2 (de)
BR (1) BR0314276A (de)
CA (1) CA2498669C (de)
IT (1) ITTO20020793A1 (de)
RU (1) RU2334304C2 (de)
WO (1) WO2004025726A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101675504B (zh) * 2007-09-21 2011-04-27 Lg化学株式会社 采用负性光刻胶刻蚀玻璃或金属基底的方法以及采用该方法制备印刷版的方法
CN101654217B (zh) * 2008-08-21 2011-09-14 博奥生物有限公司 一种制作微元件的方法
JP5370330B2 (ja) * 2010-10-01 2013-12-18 住友金属鉱山株式会社 半導体素子搭載用基板の製造方法
CN103224866A (zh) * 2013-04-28 2013-07-31 王惠莹 一种马铃薯白酒的酿制方法
JP6557447B2 (ja) * 2013-10-31 2019-08-07 日亜化学工業株式会社 半導体素子の製造方法
CN103560083B (zh) * 2013-11-18 2015-12-30 电子科技大学 一种用于非制冷红外焦平面探测器电极图形化的剥离工艺
CN113677825B (zh) * 2019-04-16 2023-10-24 应用材料公司 沟槽中薄膜沉积的方法
US11629402B2 (en) 2019-04-16 2023-04-18 Applied Materials, Inc. Atomic layer deposition on optical structures
TWI792260B (zh) * 2021-04-09 2023-02-11 晶瑞光電股份有限公司 利用金屬掀離製程的半導體元件製造方法及其製成之半導體元件
CN115050635B (zh) * 2022-06-07 2025-10-17 深圳技术大学 离子束刻蚀方法及芯片

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154737A (en) * 1979-05-22 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of forming pattern
JPS616830A (ja) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JPS61142761A (ja) * 1984-12-17 1986-06-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62195146A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置の製造方法
US5091288A (en) 1989-10-27 1992-02-25 Rockwell International Corporation Method of forming detector array contact bumps for improved lift off of excess metal
RU2111576C1 (ru) * 1993-09-16 1998-05-20 Научно-исследовательский институт физических измерений Способ формирования фотолитографического рисунка в пленке двуокиси кремния на рельефной поверхности кремниевой пластины
US5888845A (en) * 1996-05-02 1999-03-30 National Semiconductor Corporation Method of making high sensitivity micro-machined pressure sensors and acoustic transducers
JPH10168557A (ja) * 1996-12-09 1998-06-23 Hitachi Ltd Ｖ溝付基板の蒸着方法
JPH11112045A (ja) * 1997-09-30 1999-04-23 Fujitsu Ltd 微細パターン形成方法及びそれを利用した電子装置の製造方法
GB9819817D0 (en) * 1998-09-12 1998-11-04 Secr Defence Improvements relating to micro-machining
JP2001127155A (ja) * 1999-10-29 2001-05-11 Hitachi Ltd ビルドアップ基板、及びその製法

Also Published As

Publication number Publication date
EP1546028B8 (de) 2012-05-23
US7255799B2 (en) 2007-08-14
KR20050047113A (ko) 2005-05-19
US20050224453A1 (en) 2005-10-13
WO2004025726A3 (en) 2005-04-28
RU2005110686A (ru) 2005-09-10
CA2498669A1 (en) 2004-03-25
BR0314276A (pt) 2005-07-19
CN100439233C (zh) 2008-12-03
AU2003265164B2 (en) 2010-06-03
WO2004025726A2 (en) 2004-03-25
EP1546028B1 (de) 2012-04-11
CA2498669C (en) 2013-02-19
JP4559859B2 (ja) 2010-10-13
RU2334304C2 (ru) 2008-09-20
CN1688504A (zh) 2005-10-26
ITTO20020793A1 (it) 2004-03-13
EP1546028A2 (de) 2005-06-29
AU2003265164A1 (en) 2004-04-30
KR100997940B1 (ko) 2010-12-02
JP2005539379A (ja) 2005-12-22

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