ATE553063T1 - Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche - Google Patents

Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche

Info

Publication number
ATE553063T1
ATE553063T1 AT03795198T AT03795198T ATE553063T1 AT E553063 T1 ATE553063 T1 AT E553063T1 AT 03795198 T AT03795198 T AT 03795198T AT 03795198 T AT03795198 T AT 03795198T AT E553063 T1 ATE553063 T1 AT E553063T1
Authority
AT
Austria
Prior art keywords
micro
etchings
machined surface
negative photoresist
photoresist
Prior art date
Application number
AT03795198T
Other languages
English (en)
Inventor
Renato Conta
Irma Disegna
Original Assignee
Olivetti Personal Comp Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olivetti Personal Comp Spa filed Critical Olivetti Personal Comp Spa
Application granted granted Critical
Publication of ATE553063T1 publication Critical patent/ATE553063T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00412—Mask characterised by its behaviour during the etching process, e.g. soluble masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT03795198T 2002-09-12 2003-09-11 Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche ATE553063T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT000793A ITTO20020793A1 (it) 2002-09-12 2002-09-12 Metodo per ricoprire selettivamente una superficie microlavorata.
PCT/IT2003/000545 WO2004025726A2 (en) 2002-09-12 2003-09-11 Method for selectively covering a micro machined surface

Publications (1)

Publication Number Publication Date
ATE553063T1 true ATE553063T1 (de) 2012-04-15

Family

ID=31986049

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03795198T ATE553063T1 (de) 2002-09-12 2003-09-11 Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche

Country Status (12)

Country Link
US (1) US7255799B2 (de)
EP (1) EP1546028B8 (de)
JP (1) JP4559859B2 (de)
KR (1) KR100997940B1 (de)
CN (1) CN100439233C (de)
AT (1) ATE553063T1 (de)
AU (1) AU2003265164B2 (de)
BR (1) BR0314276A (de)
CA (1) CA2498669C (de)
IT (1) ITTO20020793A1 (de)
RU (1) RU2334304C2 (de)
WO (1) WO2004025726A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988437B1 (ko) * 2007-09-21 2010-10-18 주식회사 엘지화학 네가티브 포토레지스트를 이용한 유리 또는 금속 식각방법 및 이를 이용한 클리쉐의 제조방법
CN101654217B (zh) * 2008-08-21 2011-09-14 博奥生物有限公司 一种制作微元件的方法
JP5370330B2 (ja) * 2010-10-01 2013-12-18 住友金属鉱山株式会社 半導体素子搭載用基板の製造方法
CN103224866A (zh) * 2013-04-28 2013-07-31 王惠莹 一种马铃薯白酒的酿制方法
JP6557447B2 (ja) * 2013-10-31 2019-08-07 日亜化学工業株式会社 半導体素子の製造方法
CN103560083B (zh) * 2013-11-18 2015-12-30 电子科技大学 一种用于非制冷红外焦平面探测器电极图形化的剥离工艺
CN113677825B (zh) * 2019-04-16 2023-10-24 应用材料公司 沟槽中薄膜沉积的方法
TWI792260B (zh) * 2021-04-09 2023-02-11 晶瑞光電股份有限公司 利用金屬掀離製程的半導體元件製造方法及其製成之半導體元件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154737A (en) * 1979-05-22 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of forming pattern
JPS616830A (ja) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JPS61142761A (ja) * 1984-12-17 1986-06-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62195146A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置の製造方法
US5091288A (en) * 1989-10-27 1992-02-25 Rockwell International Corporation Method of forming detector array contact bumps for improved lift off of excess metal
US5888845A (en) * 1996-05-02 1999-03-30 National Semiconductor Corporation Method of making high sensitivity micro-machined pressure sensors and acoustic transducers
JPH10168557A (ja) * 1996-12-09 1998-06-23 Hitachi Ltd Ｖ溝付基板の蒸着方法
JPH11112045A (ja) * 1997-09-30 1999-04-23 Fujitsu Ltd 微細パターン形成方法及びそれを利用した電子装置の製造方法
GB9819817D0 (en) * 1998-09-12 1998-11-04 Secr Defence Improvements relating to micro-machining
JP2001127155A (ja) * 1999-10-29 2001-05-11 Hitachi Ltd ビルドアップ基板、及びその製法

Also Published As

Publication number Publication date
KR100997940B1 (ko) 2010-12-02
US7255799B2 (en) 2007-08-14
JP4559859B2 (ja) 2010-10-13
CA2498669C (en) 2013-02-19
CN1688504A (zh) 2005-10-26
RU2334304C2 (ru) 2008-09-20
EP1546028B8 (de) 2012-05-23
AU2003265164B2 (en) 2010-06-03
KR20050047113A (ko) 2005-05-19
WO2004025726A2 (en) 2004-03-25
CN100439233C (zh) 2008-12-03
CA2498669A1 (en) 2004-03-25
AU2003265164A1 (en) 2004-04-30
RU2005110686A (ru) 2005-09-10
EP1546028B1 (de) 2012-04-11
WO2004025726A3 (en) 2005-04-28
JP2005539379A (ja) 2005-12-22
ITTO20020793A1 (it) 2004-03-13
BR0314276A (pt) 2005-07-19
EP1546028A2 (de) 2005-06-29
US20050224453A1 (en) 2005-10-13

Similar Documents

Publication Publication Date Title
WO2005019503A3 (en) Sub-micron-scale patterning method and system
WO2004013693A3 (en) Scatterometry alignment for imprint lithography
TW200604730A (en) Formation of discontinuous films employing on template dispense during lithography processes
ATE228939T1 (de) Die herstellung von mikrostrukturen zur verwendung in tests
TW200507951A (en) Unitary dual damascene process using imprint lithography
DE60105836D1 (de) Verfahren zum trennen eines films von einem substrat
WO2006057745A3 (en) Direct imprinting of etch barriers using step and flash imprint lithography
TW200625407A (en) Method for foring a finely patterned resist
ATE453739T1 (de) Entschichtungsverfahren
DE69934986D1 (de) Verfahren für anisotropes ätzen
WO2002037183A3 (en) Inverse resist coating process
WO2007100644A3 (en) Method and apparatus for using flex circuit technology to create a reference electrode channel
TW200615712A (en) Removing apparatus, protective film forming apparatus, substrate processing system and removing method
ATE553063T1 (de) Verfahren zum selektiven abdecken einer mikrobearbeiteten oberfläche
ATE498714T1 (de) Verfahren und vorrichtung zum entschichten elektrolytisch abgeschiedener metallbleche aus permanenten kathoden
DE60334342D1 (de) Vorrichtung zum Strecken einer dünnen Folie
ATE205636T1 (de) Verfahren zum rauhätzen einer halbleiter- oberfläche
NL1025640A1 (nl) Werkwijze voor het vormen van een opening in een lichtabsorberende laag op een masker.
WO2004021088A3 (en) Lithographic method for small line printing
TW200634928A (en) Method for semiconductor manufacturing using a negative photoresist with thermal flow properties
EP3667422A8 (de) Lithografisches strukturierungsverfahren und system dafür
TW200717606A (en) Method for forming feature definitions
EP2149817A3 (de) Verfahren zur Herstellung einer Form
ATE320331T1 (de) Verfahren sowie zylinder zum perforieren einer dünnen folie
DE50305178D1 (de) Verfahren zum aussenseitigen beschichten eines sanitären auslaufteiles sowie sanitäres auslaufteil