WO2015043261A1 - 光刻胶的去除方法、曝光装置以及显示基板的制造方法 - Google Patents

光刻胶的去除方法、曝光装置以及显示基板的制造方法 Download PDF

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Publication number
WO2015043261A1
WO2015043261A1 PCT/CN2014/080894 CN2014080894W WO2015043261A1 WO 2015043261 A1 WO2015043261 A1 WO 2015043261A1 CN 2014080894 W CN2014080894 W CN 2014080894W WO 2015043261 A1 WO2015043261 A1 WO 2015043261A1
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WIPO (PCT)
Prior art keywords
photoresist
substrate
exposure
patterning process
light source
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Application number
PCT/CN2014/080894
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English (en)
French (fr)
Inventor
张治超
郭总杰
刘正
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/421,570 priority Critical patent/US20150346603A1/en
Publication of WO2015043261A1 publication Critical patent/WO2015043261A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Definitions

  • the present disclosure relates to a method of removing a photoresist, an exposure apparatus, and a method of manufacturing a display substrate. Background technique
  • the fabrication process of the array substrate is usually performed by photolithography.
  • the specific fabrication process is as follows: a layer of photoresist is coated on the substrate; the photoresist is exposed and developed to form a desired pattern; and the substrate is formed according to the formed pattern. Etching treatment; the remaining photoresist is stripped by a stripping device to form an array substrate.
  • the principle of peeling off the photoresist on the substrate by the stripping device is that the photoresist is dissolved by the stripping liquid of the stripping device to achieve the purpose of stripping the photoresist. Therefore, in the actual production process, it is necessary to separately provide a stripping device to strip the photoresist.
  • the channel is mainly fabricated by an ashing process, and the ashing process is as follows: coating a layer of photoresist on the substrate; performing semi-exposure processing and development processing on the photoresist, removing Setting a thickness of the photoresist corresponding to the position of the channel pattern; then using a high-power device to react the chemical gas with the remaining photoresist corresponding to the position of the channel pattern, and removing the remaining photoresist corresponding to the position of the channel pattern, A desired channel pattern is formed; the photoresist other than the channel pattern is subjected to a lift-off process by a lift-off device to form a channel of the TFT array substrate. Therefore, in the ashing process, it is necessary to configure a high-power device, and it is necessary to react the chemical gas with the photoresist through a high-power device to remove the photoresist of a desired thickness.
  • Embodiments of the present invention provide a method for removing a photoresist for removing a photoresist on a substrate after a patterning process, the method comprising: exposing a photoresist on a substrate after a patterning process Processing; and removing the exposed photoresist after development.
  • the exposure energy for exposing the photoresist is determined according to the thickness of the photoresist to be removed; and the exposure energy according to the determined exposure process is performed on the substrate after the patterning process The photoresist is subjected to exposure processing.
  • the photoresist on the substrate after the patterning process is removed, which is The photoresist on the substrate after the process is subjected to a total stripping treatment, and the thickness of the photoresist to be removed is the maximum thickness of the photoresist on the substrate after the patterning process.
  • the photoresist on the substrate after the patterning process is removed, and the photoresist on the substrate after the patterning process is ashed, and the thickness of the photoresist to be removed is processed by a patterning process. A portion of the thickness of the photoresist on the back substrate.
  • the exposure energy of the photoresist is exposed, so that the thickness of the removed photoresist reaches a set thickness, and the process adjustment is flexible, and can adapt to different process requirements.
  • the exposure intensity of the photoresist for the exposure process is determined according to the thickness of the photoresist to be removed; and the photoresist on the substrate after the patterning process is processed according to the determined exposure intensity of the exposure process Performing an exposure process; or determining a time for exposing the photoresist according to the thickness of the photoresist to be removed; and exposing the photoresist on the substrate after the patterning process according to the determined time of the exposure process deal with.
  • the exposing the photoresist on the substrate after the patterning process comprises: exposing the photoresist on the substrate after the patterning process by an exposure light source.
  • the exposure light source includes: a white light source or an ultraviolet light source.
  • the light source is a strip light source that moves at a uniform speed in a direction parallel to the substrate and illuminates the substrate such that the photoresist on the substrate is exposed to the same extent.
  • the light source is a planar light source, and the planar light source is vertically irradiated on the substrate such that the photoresist on the substrate is exposed to the same extent.
  • the embodiment of the invention further provides a method for manufacturing a display substrate, comprising the steps of forming a device pattern on a substrate by using a photoresist by a patterning process, and removing the photoresist on the substrate after the patterning process.
  • the step of removing the photoresist on the substrate after the patterning process comprises any one of the above photoresist removal methods.
  • the step of forming a device pattern on the substrate by using a photoresist by a patterning process comprising: forming a material film layer of the device on the substrate; forming a photoresist film layer on the material film layer of the device;
  • the mold exposes and develops the photoresist film layer, removes a portion of the photoresist to expose a portion of the material film layer, and another portion of the photoresist remains on the substrate after the patterning process; a portion of the exposed material film layer Etching is performed to form a device pattern.
  • the display substrate is a thin film transistor array substrate.
  • the thin film transistor array substrate includes a thin film transistor, a pixel electrode, a gate line, and a data line.
  • the device pattern is a pattern of gates, active layers, source and drain electrodes, pixel electrodes, gate lines, or data lines in a thin film transistor.
  • An embodiment of the present invention further provides an exposure apparatus including an exposure light source, wherein the exposure light source includes a mask exposure light source and a photoresist removal exposure light source, wherein the mask exposure light source is used to perform a film layer on the substrate by using the mask plate. Irradiating the film layer during the mask exposure process; the photoresist removing exposure light source is used for light on the substrate after the patterning process in any one of the methods of using the photoresist removing method or the display substrate The photoresist on the substrate after the patterning process is irradiated while the gel is removed.
  • Figure la is a schematic view of a substrate after a patterning process in an embodiment of the present invention.
  • Figure lb is a schematic view showing that all of the photoresist on the substrate after the patterning process is exposed in the embodiment of the present invention
  • Figure lc is a schematic view of the photoresist after peeling off on the substrate after the patterning process in the embodiment of the present invention.
  • FIG. 2a is a schematic view of a substrate coated with a photoresist in an embodiment of the present invention
  • FIG. 2b is a schematic view of a substrate after exposure processing of a photoresist film on a substrate according to an embodiment of the invention
  • FIG. 2c is a schematic diagram of a substrate after a photoresist film is formed into a desired pattern according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a substrate on which a metal film on a substrate is etched to form a desired pattern according to an embodiment of the present invention
  • 2e is a schematic view of a substrate after exposure processing of an unexposed photoresist film in an embodiment of the present invention
  • FIG. 2f is a schematic view of a substrate for removing a photoresist by using a developing solution according to an embodiment of the present invention
  • FIG. 3a is a view showing a first channel pattern formed on a substrate after a patterning process according to an embodiment of the present invention
  • Schematic diagram of the rear substrate
  • FIG. 3b is a schematic diagram of a substrate after a first exposure treatment of a photoresist on a substrate after a patterning process according to an embodiment of the invention
  • 3c is a schematic diagram of a substrate after forming a second channel pattern on a substrate after a patterning process according to an embodiment of the invention
  • 3d is a schematic diagram of a substrate for forming a channel pattern by etching a substrate according to a second channel pattern according to an embodiment of the invention
  • FIG. 4a is a schematic view showing a substrate coated with a photoresist in a substrate containing a channel according to an embodiment of the present invention
  • 4b is a schematic diagram of a substrate including a first channel pattern in a substrate containing a channel according to an embodiment of the invention
  • 4C is a schematic diagram of a substrate after performing a second exposure process on a photoresist on a substrate including a first channel pattern in a substrate containing a channel according to an embodiment of the invention
  • 4d is a schematic diagram of a substrate having a second channel pattern in a substrate containing a channel according to an embodiment of the invention
  • FIG. 4e is a schematic diagram of a substrate after etching a substrate to form a desired pattern in a substrate containing a channel according to an embodiment of the invention
  • 4f is a schematic view showing a substrate after exposing an unexposed photoresist film in a substrate containing a channel according to an embodiment of the invention
  • 4G is a schematic view showing a substrate for removing a photoresist in a substrate containing a channel according to an embodiment of the present invention; a schematic view of exposure processing of the photoresist; and a schematic view of exposure processing of the photoresist.
  • the photoresist on the substrate after the patterning process is exposed; the photoresist after the exposure process is removed by the development process; when the photoresist is stripped in the prior art, A stripping device needs to be configured, and when the photoresist is ashed, high-power equipment and chemical gas are required to be disposed, which saves equipment costs and reduces production costs.
  • Embodiments of the present invention provide a method for removing a photoresist for removing a photoresist on a substrate after a patterning process, the method comprising:
  • Step 101 performing exposure processing on the photoresist on the substrate after the patterning process;
  • Step 102 removing the exposed photoresist by a development process, that is, using the developing product such as a developing solution to expose the photoresist Remove it.
  • the photoresist on the substrate after the patterning process in the embodiment of the present invention refers to a photoresist which has a pattern structure after exposure, development and etching in the patterning process.
  • a gate pattern is formed on a base substrate
  • a gate material film is coated on the base substrate
  • a photoresist is coated on the gate material film to form a photoresist film according to an expected gate pattern.
  • the patterning process may generally include forming a thin film of a pattern material on the substrate, applying a photoresist on the film of the pattern material, exposing the photoresist to the desired pattern, developing the film, and forming light after exposure and development processing.
  • composition process exemplified above is only a preferred embodiment, and the patterning process described in the embodiment of the present invention is not limited to these embodiments, and may include any other type of graphics.
  • the patterning of the structure such as the patterning of the pattern structure by techniques such as 3D printing, is also encompassed within the scope of the present invention.
  • the development process described in the embodiment of the present invention means: for a positive photoresist, after exposing the photoresist, the exposed photoresist is dissolved by the developer, and the exposed photolithography is removed. Glue, the unexposed photoresist is left behind; the negative photoresist is the opposite, that is, the photoresist is exposed After the treatment, the unexposed photoresist is removed using a developing solution, and the exposed photoresist is left.
  • performing exposure processing on the photoresist on the substrate after the patterning process in step 101 includes: determining, according to the thickness of the photoresist to be removed, an exposure energy for exposing the photoresist; The exposure energy of the exposure process is performed, and the photoresist on the substrate after the patterning process is exposed; wherein factors affecting the exposure energy include, but are not limited to, the following factors: exposure intensity, exposure time. That is, the exposure intensity of the photoresist may be determined according to the thickness of the photoresist to be removed; and the photoresist on the substrate after the patterning process is exposed according to the determined exposure intensity of the exposure process. Processing; or determining the time for exposing the photoresist according to the thickness of the photoresist to be removed; and exposing the photoresist on the substrate after the patterning process according to the determined exposure processing time.
  • the exposure processing time and the exposure intensity of the exposure processing are proportional to the thickness of the exposed photoresist.
  • the longer the exposure treatment the greater the exposure intensity, and the thicker the thickness of the exposed photoresist.
  • the photoresists with different compositions have different light sensitivities, the exposure treatment time is the same, or the exposure intensity is the same, and the thickness of the exposed photoresist may be different. Therefore, it is necessary to determine the time of exposure processing or the exposure intensity in accordance with the composition of the photoresist and the thickness of the photoresist to be exposed.
  • the exposure process can be divided into two cases, one is that the photoresist on the substrate after the patterning process needs to be stripped, and the other case is that the patterning process is required.
  • the photoresist on the processed substrate is subjected to ashing treatment, and the following two cases are separately introduced.
  • Case 1 The photoresist on the substrate after the patterning process needs to be stripped.
  • the substrate after the patterning process wherein 21 is a substrate, 22 is a metal film, 23 is a photoresist to be removed; and the photoresist 23 on the substrate is exposed by an exposure light source, as shown in FIG.
  • the photoresist on the substrate is exposed to the exposure light source, and 24 is the photoresist to be removed after the exposure process, and the exposed substrate is immersed in the developer, for example, for development processing, and the patterning process is removed.
  • the photoresist 24 on the subsequent substrate forms a substrate as shown in FIG. 1c, which realizes the stripping of the photoresist and avoids the special arrangement of the photoresist stripping device for stripping the photoresist.
  • the thickness of the photoresist to be removed is processed by the patterning process.
  • the maximum thickness of the photoresist on the substrate; the exposure time or exposure at this time The intensity can be set according to the maximum thickness of the photoresist on the substrate, or can be adjusted according to the thickness of the photoresist at different positions on the substrate.
  • Embodiments of the present invention provide a method for fabricating a substrate, the method comprising:
  • Step 301 coating a layer of photoresist on the substrate to form a photoresist film, and the substrate coated with the photoresist is as shown in FIG. 2a, wherein 41 is a substrate, 42 is a metal film, and 43 is a photoresist;
  • Step 302 Exposing the photoresist film on the substrate according to the set pattern by using a mask, and the exposed substrate is as shown in FIG. 2b, wherein 43 is an unexposed photoresist, and 44 is set according to the setting.
  • Step 303 removing the exposed photoresist 44 by a developing process, forming a desired pattern on the photoresist film, and forming a substrate having a desired pattern on the photoresist film as shown in FIG. 2c;
  • Step 304 etching the metal film 42 on the substrate according to the pattern formed on the photoresist film, forming a desired pattern on the substrate, and forming the desired pattern as shown in FIG. 2d; the following steps are as described above Method of removing photoresist:
  • Step 305 exposing the unexposed photoresist by an exposure light source, so that the thickness of the exposed photoresist film is the maximum thickness of the photoresist film on the substrate, and after exposing the unexposed photoresist film
  • the substrate is as shown in Figure 2e, wherein 45 is the exposed photoresist;
  • Step 306 removing the photoresist 45 on the substrate by using a developing solution, for example, by dipping the exposed substrate into the developing solution or spraying the developing solution onto the substrate, and removing the substrate of the photoresist as shown in Fig. 2f.
  • a developing solution for example, by dipping the exposed substrate into the developing solution or spraying the developing solution onto the substrate, and removing the substrate of the photoresist as shown in Fig. 2f.
  • Case 2 The photoresist on the substrate after the patterning process is subjected to ashing treatment.
  • Embodiments of the present invention are described by taking an example of ashing a photoresist on a substrate on which a channel pattern is formed.
  • a substrate having a first channel pattern is formed on the photoresist, wherein 51 is a substrate, 52 is a metal film, 53 is a photoresist, and 54 is a first channel pattern; At this time, a photoresist having a certain thickness is left at the first channel pattern 54.
  • a known method of removing the remaining photoresist at the first channel pattern 54 includes ejecting a chemical gas through a high efficiency device to completely etch away the remaining photoresist at the first channel pattern 54. And partially etching away the photoresist of the other region on the substrate where the first channel pattern is not formed, wherein the thickness of the photoresist on the etched substrate is not formed in other regions of the first channel pattern, and etching The remaining photoresist at the first channel pattern 54 has the same thickness.
  • the method package for removing the remaining photoresist at the first channel pattern 54 in the embodiment of the present invention The first exposure process is performed on the photoresist on the substrate by the exposure light source, so that the thickness of the photoresist on the substrate is exposed to be the thickness of the photoresist remaining at the first channel pattern 54, 55 in FIG. 3b. a photoresist exposed after the first exposure process;
  • the formed second channel pattern etches the metal film 52 to form a channel pattern on the substrate, and the substrate forming the channel pattern is as shown in FIG. 3d.
  • embodiments of the present invention provide a method of fabricating an array substrate including a thin film transistor having a channel region, the method comprising:
  • Step 601 coating a layer of photoresist on the substrate to form a photoresist film, and the substrate coated with the photoresist is as shown in FIG. 4a, wherein 71 is a substrate, 72 is a metal film, and 73 is a photoresist;
  • Step 602 Perform a first exposure and development process on the photoresist film on the substrate according to the set channel pattern to form a first channel pattern 74.
  • the substrate including the first channel pattern 74 is as shown in FIG. 4b. ;
  • Step 603 performing a second exposure process on the photoresist on the substrate including the first channel pattern 74.
  • the thickness of the exposed photoresist is the thickness of the photoresist remaining at the first channel pattern on the substrate, such as As shown in FIG. 4c, 75 is an exposed photoresist, and 73 is an unexposed photoresist;
  • Step 604 removing the exposed photoresist 75, forming a second channel pattern 76 on the photoresist film of the substrate, and the substrate containing the second channel pattern is as shown in FIG. 4d;
  • Step 605 etching the metal film 72 according to the second channel pattern 76 formed on the photoresist film to form a desired pattern on the substrate, and forming a desired pattern as shown in FIG. 4e;
  • Step 606 Exposing the unexposed photoresist film by an exposure light source, so that the thickness of the exposed photoresist film is the same as the thickness of the remaining photoresist film on the substrate, and after exposing the unexposed photoresist film The substrate is shown in Figure 4f;
  • Step 607 immersing the exposed substrate in the developing solution to remove the photoresist on the substrate, and removing the substrate of the photoresist as shown in FIG. 4g.
  • the light source for exposing the light in the embodiment of the present invention refers to a light source capable of performing exposure processing on the photoresist, such as a short-wave light source.
  • the exposure light source of the present disclosure is not limited to the embodiment of the present invention, and may include any other type of A light source for exposing the photoresist is also encompassed within the scope of the present invention.
  • the exposure light source in the embodiment of the present invention includes but is not limited to the following light sources: a white light source and an ultraviolet light source.
  • the light source containing short-wave light may be a strip light source, a planar light source, or any other shape of light source, and the photoresist on the board receives the same light intensity. As shown in FIG.
  • the exposure light source is a strip light source
  • the light source is uniformly moved in a direction parallel to the substrate and the substrate is irradiated, and the exposure degree of the photoresist on the board is the same; wherein 81 is an exposure light source, and 82 is light. Engraved, 83 is the substrate.
  • the exposure light source is a planar light source, and the area of the planar short-wave light source is the same as the area of the substrate, the light source is parallel to the substrate, and the light emitted by the light source is vertically irradiated on the substrate, so that the exposure of the photoresist on the substrate is the same;
  • the exposure light source exposes the photoresists in different regions on the substrate, and the exposure of the photoresist on the board is the same.
  • the exposure light source is a planar light source, and the exposure light source exposes the photoresist on the substrate, wherein 91 is an exposure light source, 92 is a photoresist, and 93 is a substrate.
  • the 4mask process is taken as an example, but the present invention is not limited to the above embodiment, and any number of patterning processes may be applied to the embodiment of the present invention as long as the photoresist removal method is involved.
  • the embodiment of the invention further provides a method for manufacturing a display substrate, which comprises the steps of forming a device pattern on a substrate by a patterning process by using a photoresist, and performing photoresist on the substrate after the patterning process.
  • a step of removing wherein the step of removing the photoresist on the substrate after the patterning process comprises any one of the above photoresist removal methods.
  • a method of manufacturing a display substrate includes: exposing a photoresist on a substrate subjected to a patterning process; and removing the exposed photoresist by a developing process.
  • the display substrate is, for example, a thin film transistor array substrate, and the thin film transistor array substrate includes, for example, a thin film transistor, a pixel electrode, a gate line, and a data line;
  • the device pattern is, for example, a pattern of a gate, an active layer, a source/drain electrode, a pixel electrode, a gate line, or a data line in a thin film transistor.
  • Exposing the photoresist on the substrate after the patterning process comprises: determining an exposure energy for exposing the photoresist according to the thickness of the photoresist to be removed; and determining exposure energy according to the determined exposure process,
  • the photoresist on the substrate after the patterning process is subjected to exposure processing; wherein factors affecting the exposure energy include, but are not limited to, the following factors: exposure intensity, exposure time.
  • the exposure intensity of the photoresist may be determined according to the thickness of the photoresist to be removed; according to the determined exposure intensity, on the substrate after the patterning process
  • the photoresist is subjected to exposure processing; or the exposure time of the photoresist is determined according to the thickness of the photoresist to be removed; and the photolithography on the substrate after the patterning process is determined according to the determined exposure processing time
  • the glue is exposed.
  • the exposure processing time and the exposure intensity of the exposure processing are proportional to the thickness of the exposed photoresist.
  • the longer the exposure treatment the greater the exposure intensity, and the thicker the thickness of the exposed photoresist.
  • the photoresists with different compositions have different light sensitivities, the exposure treatment time is the same, or the exposure intensity is the same, and the thickness of the exposed photoresist may be different. Therefore, it is necessary to share the same time for determining the exposure process or the exposure intensity depending on the composition of the photoresist and the thickness of the photoresist to be exposed.
  • the exposure process can be divided into two cases, one is that the photoresist on the substrate after the patterning process needs to be stripped, and the other case is that the patterning process is required.
  • the photoresist on the processed substrate is subjected to ashing treatment; the above two cases have been described in detail in the method for removing the photoresist, and will not be described herein.
  • the step of forming a device pattern on the substrate by a patterning process using a photoresist includes:
  • Step 1001 forming a material film layer of a desired device on the base substrate;
  • Step 1002 forming a photoresist film layer on a material film layer of the device
  • Step 1003 exposing and developing the photoresist film layer by using a mask, removing a portion of the photoresist to expose a portion of the material film layer of the device, and leaving another portion of the photoresist on the substrate after the patterning process;
  • Step 1004 Etching a portion of the exposed film layer to form the desired device pattern.
  • the embodiment of the invention further provides an exposure device, which can be used for removing the photoresist in the above method, the device comprises an exposure light source, and the exposure light source comprises a mask exposure light source and a photoresist removal exposure light source, wherein
  • the mode exposure light source is used for irradiating the film layer when performing mask exposure processing on the film layer on the substrate by using the reticle;
  • the photoresist removing exposure light source is used for the patterning process by using the photoresist removing method or the display substrate manufacturing method When the photoresist on the processed substrate is removed, the photoresist on the substrate after the patterning process is irradiated.
  • the photoresist removal exposure light source refers to a light source capable of performing exposure processing on the photoresist, for example, a short-wave light source.
  • the exposure light source described in the present disclosure is not limited to the embodiment of the present invention, and may include any other type of light that can be used.
  • the light source for performing the exposure treatment is also covered by the protection scope of the present invention. within.
  • the specific exposure light source has been described in detail in the foregoing, and will not be described again here.
  • the photoresist on the substrate processed by the patterning process is exposed; the exposed photoresist is removed by the development process; and the photoresist on the substrate after the patterning process is used
  • the photoresist is removed by the exposure processing and the development processing. Therefore, when the photoresist on the substrate after the patterning process is stripped, it is no longer necessary to configure the stripping device, or when the ashing process is performed, it is no longer necessary to configure the high-power device. As well as chemical gases, equipment costs are saved and production costs are reduced.

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Abstract

一种光刻胶的去除方法、曝光装置以及显示基板的制造方法。该光刻胶去除方法，包括：对构图工艺处理后的基板（41）上的光刻胶（43）进行曝光处理；以及通过显影处理去除曝光处理后的光刻胶（45）。上述方法避免了对光刻胶进行剥离处理时，需要配置剥离设备，对光刻胶进行灰化处理时，需要配置高功率设备以及化学气体的问题，节约了设备成本，同时也降低了生产成本。

Description

光刻胶的去除方法、 曝光装置以及显示基板的制造方法 技术领域
本公开涉及光刻胶的去除方法、 曝光装置以及显示基板的制造方法。 背景技术
阵列基板的制作过程通常釆用光刻技术， 具体制作过程如下： 在基板上 涂覆一层光刻胶； 对光刻胶进行曝光和显影处理， 形成所需图形； 根据形成 的图形对基板进行刻蚀处理； 通过剥离设备对剩余的光刻胶进行剥离处理， 形成阵列基板。 剥离设备对基板上光刻胶的剥离原理是， 通过剥离设备的剥 离液对光刻胶进行溶解，以达到剥离光刻胶的目的。 因此在实际生产过程中， 需要单独配备剥离设备对光刻胶进行剥离处理。
在 TFT阵列基板的制作过程中， 沟道主要釆用灰化工艺进行制作， 灰化 工艺流程如下： 在基板上涂覆一层光刻胶； 对光刻胶进行半曝光处理和显影 处理， 去除设定厚度的、 与沟道图形位置对应的光刻胶； 然后釆用高功率设 备使化学气体与沟道图形位置对应的剩余光刻胶反应， 去除沟道图形位置对 应的剩余光刻胶， 形成所需的沟道图形； 通过剥离设备对沟道图形以外的光 刻胶进行剥离处理， 形成 TFT阵列基板的沟道。 因此在灰化工艺中， 需要配 置高功率设备， 并需要通过高功率设备将化学气体与光刻胶反应， 去除所需 厚度的光刻胶。 发明内容
本发明实施例提供了一种光刻胶的去除方法， 用于对构图工艺处理后的 基板上的光刻胶进行去除， 该方法包括： 对构图工艺处理后的基板上的光刻 胶进行曝光处理； 以及通过显影处理去除曝光处理后的光刻胶。
在一个示例中， 根据需要去除的光刻胶的厚度， 确定对光刻胶进行曝光 处理的曝光能量； 以及才艮据所述确定的曝光处理的曝光能量， 对构图工艺处 理后的基板上的光刻胶进行曝光处理。
在一个示例中， 对构图工艺处理后的基板上的光刻胶进行去除， 是对构 图工艺处理后的基板上的光刻胶进行整体剥离处理， 需要去除的光刻胶的厚 度为构图工艺处理后的基板上的光刻胶的最大厚度。
在一个示例中， 对构图工艺处理后的基板上的光刻胶进行去除， 是对构 图工艺处理后的基板上的光刻胶进行灰化处理， 需要去除的光刻胶的厚度为 构图工艺处理后的基板上的光刻胶厚度的一部分。
根据不同的工艺要求， 确定对所述光刻胶进行曝光处理的曝光能量， 使 去除的光刻胶的厚度达到设定的厚度， 工艺调整灵活， 能适应不同的工艺要 求。
在一个示例中， 根据需要去除的光刻胶的厚度， 确定对光刻胶进行曝光 处理的曝光强度； 根据所述确定的曝光处理的曝光强度， 对构图工艺处理后 的基板上的光刻胶进行曝光处理； 或根据需要去除的光刻胶的厚度， 确定对 光刻胶进行曝光处理的时间； 根据所述确定的曝光处理的时间， 对构图工艺 处理后的基板上的光刻胶进行曝光处理。
在一个示例中，所述对构图工艺处理后的基板上的光刻胶进行曝光处理， 包括： 通过曝光光源对构图工艺处理后的基板上的光刻胶进行曝光处理。 曝 光光源包括： 白光光源或紫外光源。
在一个示例中， 所述光源为条状光源， 所述条状光源沿与基板平行的方 向匀速运动并照射基板， 使所述基板上的光刻胶的曝光程度相同。
在一个示例中， 所述光源为平面状光源， 所述平面状光源垂直照射在基 板上， 使所述基板上的光刻胶的曝光程度相同。
本发明实施例还提供了一种显示基板的制造方法， 包括利用光刻胶通过 构图工艺在衬底基板上形成器件图形的步骤， 以及对构图工艺处理后的基板 上的光刻胶进行去除的步骤， 其中对构图工艺处理后的基板上的光刻胶进行 去除的步骤包括上述任意一种光刻胶去除方法。
利用光刻胶通过构图工艺在衬底基板上形成器件图形的步骤， 包括： 在 衬底基板上形成所述器件的材料膜层；在器件的材料膜层上形成光刻胶膜层； 利用掩模对光刻胶膜层进行曝光、 显影， 去除一部分光刻胶以露出所述材料 膜层的一部分， 另一部分光刻胶留在构图工艺处理后的基板上； 对暴露的材 料膜层的一部分进行刻蚀， 形成器件图形。
在一个示例中， 显示基板为薄膜晶体管阵列基板。 在一个示例中， 薄膜晶体管阵列基板包括薄膜晶体管、 像素电极、 栅线 以及数据线。
在一个示例中， 器件图形为薄膜晶体管中的栅极、 有源层、 源漏电极、 像素电极、 栅线或数据线的图形。
本发明实施例还提供了一种曝光装置， 包括曝光光源， 曝光光源包括掩 模曝光光源和光刻胶去除曝光光源， 其中， 掩模曝光光源用于在利用掩模版 对基板上的膜层进行掩模曝光处理时对膜层进行照射； 光刻胶去除曝光光源 用于在利用光刻胶去除方法或显示基板的制造方法中的任意一种方法中， 对 构图工艺处理后的基板上的光刻胶进行去除时对所述构图工艺处理后的基板 上的光刻胶进行照射。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 la为本发明实施例中构图工艺处理后的基板的示意图；
图 lb 为本发明实施例中构图工艺处理后的基板上的光刻胶全部被曝光 的示意图；
图 lc 为本发明实施例中构图工艺处理后的基板上的光刻胶剥离后的示 意图；
图 2a为本发明实施例中涂覆光刻胶的基板的示意图；
图 2b 为本发明实施例中对基板上的光刻胶薄膜进行曝光处理后的基板 的示意图；
图 2c为本发明实施例中光刻胶薄膜形成所需图案后的基板的示意图； 图 2d为本发明实施例中对基板上的金属薄膜进行刻蚀处理后形成所需 图形的基板的示意图；
图 2e 为本发明实施例中对未曝光的光刻胶薄膜曝光处理后的基板的示 意图；
图 2f为本发明实施例中利用显影液去除光刻胶的基板的示意图； 图 3a为本发明实施例中在构图工艺处理后的基板上形成第一沟道图案 后的基板的示意图；
图 3b 为本发明实施例中对构图工艺处理后的基板上的光刻胶第一次曝 光处理后的基板的示意图；
图 3c 为本发明实施例中在构图工艺处理后的基板上形成第二沟道图案 后的基板的示意图；
图 3d为本发明实施例中根据第二沟道图案对基板进行刻蚀处理形成沟 道图形的基板的示意图；
图 4a为本发明实施例中一种制作含有沟道的基板中涂覆光刻胶的基板 的示意图；
图 4b 为本发明实施例中一种制作含有沟道的基板中含有第一沟道图案 的基板的示意图；
图 4c 为本发明实施例中一种制作含有沟道的基板中对含有第一沟道图 案的基板上的光刻胶进行第二次曝光处理后的基板的示意图；
图 4d为本发明实施例中一种制作含有沟道的基板中含有第二沟道图案 的基板的示意图；
图 4e 为本发明实施例中一种制作含有沟道的基板中对基板进行刻蚀处 理形成所需图形后的基板的示意图；
图 4f 为本发明实施例中一种制作含有沟道的基板中对未曝光的光刻胶 薄膜曝光处理后的基板的示意图；
图 4g 为本发明实施例中一种制作含有沟道的基板中去除光刻胶的基板 的示意图； 光刻胶进行曝光处理的示意图； 光刻胶进行曝光处理的示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图， 对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
本发明实施例釆用对构图工艺处理后的基板上的光刻胶进行曝光处理； 通过显影处理去除曝光处理后的光刻胶； 避免了现有技术中， 对光刻胶进行 剥离处理时， 需要配置剥离设备， 对光刻胶进行灰化处理时， 需要配置高功 率设备以及化学气体的问题， 节约了设备成本， 同时也降低了生产成本。
本发明实施例提供了一种光刻胶的去除方法， 用于对构图工艺处理后的 基板上的光刻胶进行去除， 该方法包括：
步骤 101 : 对构图工艺处理后的基板上的光刻胶进行曝光处理； 步骤 102: 通过显影处理去除曝光处理后的光刻胶， 即， 利用显影液等 显影制品对曝光处理后的光刻胶进行去除。
本发明实施例中构图工艺处理后的基板上的光刻胶是指经过构图工艺中 的曝光、 显影和刻蚀处理之后的、 已经具有图形结构的光刻胶。 如在衬底基 板上形成栅极图形时， 在衬底基板上涂覆栅极材料薄膜， 在栅极材料薄膜上 涂覆一层光刻胶， 形成光刻胶薄膜， 根据预期的栅极图形对光刻胶薄膜进行 曝光和显影处理， 形成栅极图形形状的光刻胶， 然后再对露出的栅极材料进 行刻蚀， 形成栅极的图形； 其中， 根据栅极图形对光刻胶薄膜进行曝光和显 影处理的步骤后， 剩余的未曝光的光刻胶就是本发明实施例中构图工艺处理 后的基板上的光刻胶。
构图工艺通常可包括在衬底基板上形成图形材料薄膜、 在图形材料薄膜 上涂覆光刻胶、 根据所需图形对光刻胶进行曝光处理、 显影处理、 根据曝光 和显影处理后形成的光刻胶图案对所述图形材料薄膜进行刻蚀等工艺中的一 种或几种。
需说明的是， 以上所例举的构图工艺所包括的内容仅为优选的实施例， 本发明实施方式中所述的构图工艺并不限于这些实施例， 还可以包括其他任 意类型的可以形成图形结构的构图方式， 例如通过 3D打印等技术形成图形 结构的构图方式， 也涵盖在本发明的保护范围之内。
本发明实施例中所述的显影处理是指： 对于正性光刻胶来说， 对光刻胶 进行曝光处理后， 利用显影液将被曝光的光刻胶溶解， 去除了被曝光的光刻 胶， 未被曝光的光刻胶被留下； 负性光刻胶与之相反， 即对光刻胶进行曝光 处理后， 利用显影液将未曝光的光刻胶去除， 曝光的光刻胶被留下。
在一个示例中， 步骤 101中对构图工艺处理后的基板上的光刻胶进行曝 光处理包括： 根据需要去除的光刻胶的厚度， 确定对光刻胶进行曝光处理的 曝光能量； 根据确定的进行曝光处理的曝光能量， 对构图工艺处理后的基板 上的光刻胶进行曝光处理；其中影响曝光能量的因素包括但不限于下列因素： 曝光强度， 曝光时间。 也就是说， 可以根据需要去除的光刻胶的厚度， 确定 对光刻胶进行曝光处理的曝光强度； 根据确定的曝光处理的曝光强度， 对构 图工艺处理后的基板上的光刻胶进行曝光处理； 或根据需要去除的光刻胶的 厚度， 确定对光刻胶进行曝光处理的时间； 根据确定的曝光处理的时间， 对 构图工艺处理后的基板上的光刻胶进行曝光处理。
曝光处理的时间和曝光处理的曝光强度与被曝光的光刻胶的厚度成正 比。 组成成分相同的光刻胶， 曝光处理的时间越长， 曝光强度越大， 被曝光 的光刻胶的厚度越厚。 组成成分不同的光刻胶光感度不同， 曝光处理的时间 相同， 或曝光强度相同， 被曝光的光刻胶的厚度可能不同。 因此， 需要根据 光刻胶的组成成分， 以及需要曝光的光刻胶的厚度， 共用确定曝光处理的时 间或曝光强度。
根据需要去除的光刻胶的厚度， 可以将曝光处理分为两种情况， 一种情 况是需要对构图工艺处理后的基板上的光刻胶进行剥离处理， 另一种情况是 需要对构图工艺处理后的基板上的光刻胶进行灰化处理， 下面对两种情况分 别进行介绍。
情况一、 需要对构图工艺处理后的基板上的光刻胶进行剥离处理。
如图 la所示为构图工艺处理后的基板，其中 21为基板， 22为金属薄膜， 23为待去除的光刻胶； 通过曝光光源对基板上的光刻胶 23进行曝光处理， 如图 lb所示基板上的光刻胶受到曝光光源照射后全部被曝光， 24为曝光处 理后的待去除的光刻胶， 将曝光处理后的基板例如浸入显影液中， 进行显影 处理， 去除构图工艺处理后的基板上的光刻胶 24， 形成如图 lc所示的基板， 实现了光刻胶的剥离， 避免了为剥离光刻胶而专门配置光刻胶剥离设备。
在一个示例中， 当对构图工艺处理后的基板上的光刻胶进行整体剥离处 理， 且基板上不同位置的光刻胶厚度不相同时， 需要去除的光刻胶的厚度为 构图工艺处理后的基板上的光刻胶的最大厚度； 此时曝光处理的时间或曝光 强度， 可以根据基板上的光刻胶的最大厚度进行设定， 也可以根据基板上不 同位置的光刻胶的厚度进行调节。
本发明实施例提供一种基板的制作方法， 该方法包括：
步骤 301 : 在基板上涂覆一层光刻胶， 形成光刻胶薄膜， 涂覆光刻胶的 基板如图 2a所示， 其中 41为基板， 42为金属薄膜， 43为光刻胶；
步骤 302: 根据设定的图案利用掩模对基板上的光刻胶薄膜进行曝光处 理， 曝光处理后的基板如图 2b所示， 其中， 43为未曝光的光刻胶， 44为根 据设定的图案被曝光的光刻胶；
步骤 303 : 通过显影处理去除被曝光的光刻胶 44， 在光刻胶薄膜上形成 所需图案， 在光刻胶薄膜上形成所需图案的基板如图 2c所示；
步骤 304:根据光刻胶薄膜上形成的图案对基板上的金属薄膜 42进行刻 蚀处理， 在基板上形成所需图形， 形成所需图形后的基板如图 2d所示； 以下的步骤为前述的去除光刻胶的方法步骤：
步骤 305: 通过曝光光源对未曝光的光刻胶进行曝光处理， 使被曝光的 光刻胶薄膜的厚度为基板上光刻胶薄膜的最大厚度， 对未曝光的光刻胶薄膜 曝光处理后的基板如图 2e所示， 其中 45为曝光后的光刻胶；
步骤 306: 利用显影液， 例如通过将曝光处理后的基板浸入显影液中或 向基板喷洒显影液的方式， 去除基板上的光刻胶 45， 去除光刻胶的基板如图 2f所示。
情况二、 对构图工艺处理后的基板上的光刻胶进行灰化处理。
本发明实施例以对形成沟道图形的基板上的光刻胶进行灰化处理为例进 行描述。如图 3a所示为构图工艺处理后，在光刻胶上形成第一沟道图案的基 板， 其中， 51为基板， 52为金属薄膜， 53为光刻胶， 54为第一沟道图案； 此时第一沟道图案 54处， 还留有一定厚度的光刻胶。
一种已知的去除第一沟道图案 54处剩余的光刻胶的方法包括:通过高效 率的设备喷发化学气体，使化学气体完全刻蚀掉第一沟道图案 54处剩余的光 刻胶， 并且部分刻蚀掉基板上未形成第一沟道图案的其他区域的光刻胶， 其 中刻蚀掉的基板上未形成第一沟道图案的其他区域的光刻胶的厚度， 与刻蚀 掉第一沟道图案 54处剩余的光刻胶的厚度相同。
然而， 本发明实施例中去除第一沟道图案 54 处剩余的光刻胶的方法包 括： 通过曝光光源对基板上的光刻胶进行第一次曝光处理， 使基板上的光刻 胶曝光的厚度为第一沟道图案 54处剩余的光刻胶的厚度，图 3b中 55为第一 次曝光处理后曝光的光刻胶； 以及
对第一次曝光处理后的基板进行显影处理， 去除曝光的光刻胶， 在基板 的光刻胶上形成第二沟道图案 56， 形成第二沟道图案的基板如图 3c所示； 根据形成的第二沟道图案对金属薄膜 52进行刻蚀处理，在基板上形成沟道图 形， 形成沟道图形的基板如图 3d所示。
因此， 本发明实施例提供一种包括带有沟道区域的薄膜晶体管的阵列基 板的制作方法， 该方法包括：
步骤 601 : 在基板上涂覆一层光刻胶， 形成光刻胶薄膜， 涂覆光刻胶的 基板如图 4a所示， 其中 71为基板， 72为金属薄膜， 73为光刻胶；
步骤 602: 根据设定的沟道图案对基板上的光刻胶薄膜进行第一次曝光 和显影处理处理， 形成第一沟道图案 74， 含有第一沟道图案 74的基板如图 4b所示；
步骤 603:对含有第一沟道图案 74的基板上的光刻胶进行第二次曝光处 理， 曝光的光刻胶的厚度为基板上第一沟道图案处剩余的光刻胶的厚度， 如 图 4c所示， 75为曝光处理后的光刻胶， 73为未曝光的光刻胶；
步骤 604: 去除曝光处理后的光刻胶 75， 在基板的光刻胶薄膜上形成第 二沟道图案 76， 含有第二沟道图案的基板如图 4d所示；
步骤 605: 根据光刻胶薄膜上形成的第二沟道图案 76对金属薄膜 72进 行刻蚀处理， 在基板上形成所需图形， 形成所需图形后的基板如图 4e所示； 步骤 606: 通过曝光光源对未曝光的光刻胶薄膜进行曝光处理， 使被曝 光的光刻胶薄膜的厚度与基板上剩余的光刻胶薄膜的厚度相同， 对未曝光的 光刻胶薄膜曝光处理后的基板如图 4f所示；
步骤 607: 将曝光处理后的基板浸入显影液中， 去除基板上的光刻胶， 去除光刻胶的基板如图 4g所示。
本发明实施例中的曝光光线的光源是指能够对光刻胶进行曝光处理的光 源， 例如短波光源， 本公开所述的曝光光源并不限于本发明实施例， 还可以 包括其他任意类型的可以对光刻胶进行曝光处理的光源， 也涵盖在本发明的 保护范围之内。 本发明实施例中的曝光光源包括但不限于下列光源： 白光光源、 紫外光 光源。 其中含有短波光线的光源可以是条状光源， 也可以是面状光源， 或者 其他任意形状的光源， 板上的光刻胶受到的光照强度相同。如图 5所示， 当曝光光源为条状光源时， 使光源沿着与基板平行的方向匀速运动并照射基 板， 板上的光刻胶的曝光程度相同； 其中 81为曝光光源， 82为光刻胶， 83为基板。 当曝光光源为面状光源， 且面状短波光源的面积与基板面积相同 时， 光源与基板平行， 光源发出的光垂直照射在基板上， 使基板上的光刻胶 的曝光程度相同； 当面状曝光光源的面积小于基板面积时， 曝光光源对基板 上不同区域的光刻胶分别进行曝光， 板上的光刻胶的曝光程度相同。 如 图 6所示， 为曝光光源为面状光源， 曝光光源对基板上的光刻胶进行曝光的 示意图， 其中 91为曝光光源， 92为光刻胶， 93为基板。
本发明实施例中以 4mask工艺为例， 但本发明不局限于上述实施例， 任 何次数的构图工艺， 只要涉及到光刻胶的去除方法， 都可以应用本发明实施 例。
本发明实施例还提供了一种显示基板的制造方法， 该方法包括利用光刻 胶通过构图工艺在衬底基板上形成器件图形的步骤， 以及对构图工艺处理后 的基板上的光刻胶进行去除的步骤， 其中对构图工艺处理后的基板上的光刻 胶进行去除的步骤包括上述任意一种光刻胶去除方法。 例如， 显示基板的制 造方法包括： 对构图工艺处理后的基板上的光刻胶进行曝光处理； 通过显影 处理去除曝光处理后的光刻胶。
显示基板例如为薄膜晶体管阵列基板， 薄膜晶体管阵列基板例如包括薄 膜晶体管、 像素电极、 栅线以及数据线；
器件图形例如为薄膜晶体管中的栅极、 有源层、 源漏电极、 像素电极、 栅线或数据线的图形。
对构图工艺处理后的基板上的光刻胶进行曝光处理包括： 根据需要去除 的光刻胶的厚度， 确定对光刻胶进行曝光处理的曝光能量； 根据确定的进行 曝光处理的曝光能量， 对构图工艺处理后的基板上的光刻胶进行曝光处理； 其中影响曝光能量的因素包括但不限于下列因素： 曝光强度， 曝光时间。 也 就是说， 可以根据需要去除的光刻胶的厚度， 确定对光刻胶进行曝光处理的 曝光强度； 根据确定的曝光处理的曝光强度， 对构图工艺处理后的基板上的 光刻胶进行曝光处理； 或根据需要去除的光刻胶的厚度， 确定对光刻胶进行 曝光处理的时间； 才艮据确定的曝光处理的时间， 对构图工艺处理后的基板上 的光刻胶进行曝光处理。
曝光处理的时间和曝光处理的曝光强度与被曝光的光刻胶的厚度成正 比。 组成成分相同的光刻胶， 曝光处理的时间越长， 曝光强度越大， 被曝光 的光刻胶的厚度越厚。 组成成分不同的光刻胶光感度不同， 曝光处理的时间 相同， 或曝光强度相同， 被曝光的光刻胶的厚度可能不同。 因此， 需要根据 光刻胶的组成成分， 以及需要曝光的光刻胶的厚度， 共用确定曝光处理的时 间或曝光强度相同。
根据需要去除的光刻胶的厚度， 可以将曝光处理分为两种情况， 一种情 况是需要对构图工艺处理后的基板上的光刻胶进行剥离处理， 另一种情况是 需要对构图工艺处理后的基板上的光刻胶进行灰化处理； 上述两种情况已在 光刻胶的去除方法中详细介绍， 在此不再赘述。
在一个示例中， 利用光刻胶通过构图工艺在衬底基板上形成器件图形的 步骤， 包括：
步骤 1001 : 在衬底基板上形成所需器件的材料膜层；
步骤 1002: 在器件的材料膜层上形成光刻胶膜层；
步骤 1003: 利用掩模对光刻胶膜层进行曝光、 显影处理， 去除一部分光 刻胶以露出器件的材料膜层的一部分， 另一部分光刻胶留在构图工艺处理后 的基板上；
步骤 1004:对材暴露的料膜层的一部分进行刻蚀，形成所需的器件图形。 本发明实施例还提供了一种曝光装置， 可用于在上述方法中对光刻胶进 行去除， 所述装置包括曝光光源， 曝光光源包括掩模曝光光源和光刻胶去除 曝光光源， 其中， 掩模曝光光源用于在利用掩模版对基板上的膜层进行掩模 曝光处理时对膜层进行照射； 光刻胶去除曝光光源用于在利用光刻胶去除方 法或显示基板制造方法对构图工艺处理后的基板上的光刻胶进行去除时对构 图工艺处理后的基板上的光刻胶进行照射。
光刻胶去除曝光光源是指能够对光刻胶进行曝光处理的光源， 例如是短 波光源， 本公开中所述的曝光光源并不限于本发明实施例， 还可以包括其他 任意类型的可以对光刻胶进行曝光处理的光源， 也涵盖在本发明的保护范围 之内。 具体曝光光源已在前文中详细介绍， 在此不再赘述。
本发明实施例釆用对构图工艺处理后的基板上的光刻胶进行曝光处理； 通过显影处理去除曝光处理后的光刻胶； 由于釆用对构图工艺处理后的基板 上的光刻胶进行曝光处理和显影处理的方式去除光刻胶， 因此对构图工艺处 理后的基板上的光刻胶进行剥离处理时， 不再需要配置剥离设备， 或灰化处 理时， 不再需要配置高功率设备以及化学气体， 节约了设备成本， 同时也降 低了生产成本。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。
本申请基于并且要求于 2013 年 9 月 26 日递交的中国专利申请第 201310446586.X号的优先权， 在此全文引用上述中国专利申请公开的内容。

Claims

权利要求书
1、一种光刻胶去除方法，用于对构图工艺处理后的基板上的光刻胶进行 去除， 该方法包括：
对构图工艺处理后的基板上的光刻胶进行曝光处理； 以及
通过显影处理去除曝光处理后的光刻胶。
2、如权利要求 1所述的方法，其中所述对构图工艺处理后的基板上的光 刻胶进行曝光处理， 包括：
根据需要去除的光刻胶的厚度，确定对光刻胶进行曝光处理的曝光能量； 以及
才艮据所述确定的曝光处理的曝光能量， 对构图工艺处理后的基板上的光 刻胶进行曝光处理。
3、如权利要求 2所述的方法，其中所述对构图工艺处理后的基板上的光 刻胶进行去除， 是对构图工艺处理后的基板上的光刻胶进行整体剥离处理， 所述需要去除的光刻胶的厚度为所述构图工艺处理后的基板上的光刻胶的最 大厚度。
4、如权利要求 2所述的方法，其中所述对构图工艺处理后的基板上的光 刻胶进行去除， 是对构图工艺处理后的基板上的光刻胶进行灰化处理， 所述 需要去除的光刻胶的厚度为所述构图工艺处理后的基板上的光刻胶厚度的一 部分。
5、如权利要求 1或 2所述的方法，其中所述对构图工艺处理后的基板上 的光刻胶进行曝光处理， 包括：
根据需要去除的光刻胶的厚度，确定对光刻胶进行曝光处理的曝光强度； 根据所述确定的曝光处理的曝光强度， 对构图工艺处理后的基板上的光刻胶 进行曝光处理； 或
根据需要去除的光刻胶的厚度， 确定对光刻胶进行曝光处理的时间； 根 据所述确定的曝光处理的时间， 对构图工艺处理后的基板上的光刻胶进行曝 光处理。
6、如权利要求 1所述的方法，其中所述对构图工艺处理后的基板上的光 刻胶进行曝光处理， 包括： 通过曝光光源对构图工艺处理后的基板上的光刻胶进行曝光处理。
7、如权利要求 6所述的方法， 其中所述曝光光源为条状光源， 所述条状 光源沿与基板平行的方向匀速运动并照射基板， 使所述基板上的光刻胶的曝 光程度相同。
8、如权利要求 6所述的方法， 其中所述曝光光源为平面状光源， 所述平 面状光源垂直照射在基板上， 使所述基板上的光刻胶的曝光程度相同。
9、如权利要求 6所述的方法，其中所述曝光光源包括白光光源或紫外光 源。
10、 一种显示基板的制造方法， 包括利用光刻胶通过构图工艺在衬底基 板上形成器件图形的步骤， 以及对构图工艺处理后的基板上的光刻胶进行去 除的步骤， 其中所述对构图工艺处理后的基板上的光刻胶进行去除的步骤包 括如权利要求 1-9中任一项所述的光刻胶去除方法。
11、如权利要求 10所述的方法，其中所述利用光刻胶通过构图工艺在衬 底基板上形成器件图形的步骤， 包括：
在所述衬底基板上形成所述器件的材料膜层；
在所述器件的材料膜层上形成光刻胶膜层；
利用掩模对所述光刻胶膜层进行曝光、 显影， 去除一部分光刻胶以露出 所述材料膜层的一部分， 另一部分光刻胶留在构图工艺处理后的基板上； 对暴露的所述材料膜层的一部分进行刻蚀， 形成所述器件图形。
12、 如权利要求 10或 11所述的方法， 其中所述显示基板为薄膜晶体管 阵列基板。
13、如权利要求 12所述的方法，其中所述薄膜晶体管阵列基板包括薄膜 晶体管、 像素电极、 栅线以及数据线。
14、 如权利要求 10至 13任一项所述的方法， 其中所述器件图形为所述 薄膜晶体管中的栅极、 有源层、 源漏电极、 所述像素电极、 所述栅线或所述 数据线的图形。
15、 一种曝光装置， 包括曝光光源， 所述曝光光源包括掩模曝光光源和 光刻胶去除曝光光源， 其中， 所述掩模曝光光源用于在利用掩模版对基板上 的膜层进行掩模曝光处理时对所述膜层进行照射； 所述光刻胶去除曝光光源 用于在利用权利要求 1-9中任一项所述方法对构图工艺处理后的基板上的光 刻胶进行去除时对所述构图工艺处理后的基板上的光刻胶进行照射。
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