AU2002323303A1 - Method of forming a bond pad and structure thereof - Google Patents

Method of forming a bond pad and structure thereof

Info

Publication number
AU2002323303A1
AU2002323303A1 AU2002323303A AU2002323303A AU2002323303A1 AU 2002323303 A1 AU2002323303 A1 AU 2002323303A1 AU 2002323303 A AU2002323303 A AU 2002323303A AU 2002323303 A AU2002323303 A AU 2002323303A AU 2002323303 A1 AU2002323303 A1 AU 2002323303A1
Authority
AU
Australia
Prior art keywords
forming
bond pad
bond
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002323303A
Other languages
English (en)
Inventor
Thomas S. Kobayashi
Scott K. Pozder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002323303A1 publication Critical patent/AU2002323303A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
AU2002323303A 2001-09-14 2002-08-20 Method of forming a bond pad and structure thereof Abandoned AU2002323303A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/952,527 US6531384B1 (en) 2001-09-14 2001-09-14 Method of forming a bond pad and structure thereof
US09/952,527 2001-09-14
PCT/US2002/026607 WO2003025998A2 (en) 2001-09-14 2002-08-20 Method of forming a bond pad and structure thereof

Publications (1)

Publication Number Publication Date
AU2002323303A1 true AU2002323303A1 (en) 2003-04-01

Family

ID=25492992

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002323303A Abandoned AU2002323303A1 (en) 2001-09-14 2002-08-20 Method of forming a bond pad and structure thereof

Country Status (8)

Country Link
US (1) US6531384B1 (https=)
EP (1) EP1430523A2 (https=)
JP (1) JP4451134B2 (https=)
KR (1) KR100896141B1 (https=)
CN (1) CN1296980C (https=)
AU (1) AU2002323303A1 (https=)
TW (1) TW559965B (https=)
WO (1) WO2003025998A2 (https=)

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US7372153B2 (en) * 2003-10-07 2008-05-13 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit package bond pad having plurality of conductive members
US7214605B2 (en) * 2003-10-09 2007-05-08 Intel Corporation Deposition of diffusion barrier
US7247564B2 (en) * 2004-06-28 2007-07-24 Hewlett-Packard Development Company, L.P. Electronic device
US7213329B2 (en) * 2004-08-14 2007-05-08 Samsung Electronics, Co., Ltd. Method of forming a solder ball on a board and the board
US7429795B2 (en) * 2005-09-27 2008-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure
KR100699865B1 (ko) * 2005-09-28 2007-03-28 삼성전자주식회사 화학기계적 연마를 이용한 자기 정렬 콘택 패드 형성 방법
KR100699892B1 (ko) * 2006-01-20 2007-03-28 삼성전자주식회사 솔더접합신뢰도 개선을 위한 락킹 구조를 갖는 반도체 소자및 인쇄회로기판
US7598620B2 (en) * 2006-05-31 2009-10-06 Hebert Francois Copper bonding compatible bond pad structure and method
JP5208936B2 (ja) * 2006-08-01 2013-06-12 フリースケール セミコンダクター インコーポレイテッド チップ製造および設計における改良のための方法および装置
US7812448B2 (en) * 2006-08-07 2010-10-12 Freescale Semiconductor, Inc. Electronic device including a conductive stud over a bonding pad region
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
EP2135280A2 (en) 2007-03-05 2009-12-23 Tessera, Inc. Chips having rear contacts connected by through vias to front contacts
US8134235B2 (en) * 2007-04-23 2012-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional semiconductor device
EP2183770B1 (en) 2007-07-31 2020-05-13 Invensas Corporation Method of forming through-substrate vias and corresponding decvice
US7888257B2 (en) * 2007-10-10 2011-02-15 Agere Systems Inc. Integrated circuit package including wire bonds
US8183698B2 (en) * 2007-10-31 2012-05-22 Agere Systems Inc. Bond pad support structure for semiconductor device
KR100933685B1 (ko) * 2007-12-18 2009-12-23 주식회사 하이닉스반도체 필링 방지를 위한 본딩패드 및 그 형성 방법
US8053900B2 (en) * 2008-10-21 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias (TSVs) electrically connected to a bond pad design with reduced dishing effect
KR20100060309A (ko) * 2008-11-27 2010-06-07 주식회사 동부하이텍 반도체 소자
JP5353313B2 (ja) * 2009-03-06 2013-11-27 富士通セミコンダクター株式会社 半導体装置
US8259415B2 (en) * 2009-06-22 2012-09-04 Seagate Technology Llc Slider bond pad with a recessed channel
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
JP5610905B2 (ja) * 2010-08-02 2014-10-22 パナソニック株式会社 半導体装置
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
KR101059490B1 (ko) 2010-11-15 2011-08-25 테세라 리써치 엘엘씨 임베드된 트레이스에 의해 구성된 전도성 패드
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
JP2012124452A (ja) * 2010-12-06 2012-06-28 Samsung Electro-Mechanics Co Ltd プリント基板およびその製造方法
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
CN102612262A (zh) * 2011-01-18 2012-07-25 三星半导体(中国)研究开发有限公司 焊盘结构及其制造方法
US8314026B2 (en) 2011-02-17 2012-11-20 Freescale Semiconductor, Inc. Anchored conductive via and method for forming
US9177914B2 (en) 2012-11-15 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Metal pad structure over TSV to reduce shorting of upper metal layer
US9978637B2 (en) * 2013-10-11 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism for forming patterned metal pad connected to multiple through silicon vias (TSVs)
US20160093583A1 (en) 2014-09-25 2016-03-31 Micron Technology, Inc. Bond pad with micro-protrusions for direct metallic bonding
CN105742226B (zh) * 2014-12-09 2019-05-21 中国科学院微电子研究所 半导体器件制造方法
US9960130B2 (en) * 2015-02-06 2018-05-01 UTAC Headquarters Pte. Ltd. Reliable interconnect
US9953940B2 (en) * 2015-06-26 2018-04-24 International Business Machines Corporation Corrosion resistant aluminum bond pad structure
US10515913B2 (en) * 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
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Also Published As

Publication number Publication date
WO2003025998A3 (en) 2003-06-12
EP1430523A2 (en) 2004-06-23
CN1554116A (zh) 2004-12-08
TW559965B (en) 2003-11-01
CN1296980C (zh) 2007-01-24
US20030054626A1 (en) 2003-03-20
JP2005522019A (ja) 2005-07-21
KR20040035779A (ko) 2004-04-29
KR100896141B1 (ko) 2009-05-12
WO2003025998A2 (en) 2003-03-27
US6531384B1 (en) 2003-03-11
JP4451134B2 (ja) 2010-04-14

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase