CN1296980C - 形成具有凹槽的焊盘的方法 - Google Patents

形成具有凹槽的焊盘的方法 Download PDF

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Publication number
CN1296980C
CN1296980C CNB028178254A CN02817825A CN1296980C CN 1296980 C CN1296980 C CN 1296980C CN B028178254 A CNB028178254 A CN B028178254A CN 02817825 A CN02817825 A CN 02817825A CN 1296980 C CN1296980 C CN 1296980C
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CN
China
Prior art keywords
copper
layer
top surface
dielectric layer
pad
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Expired - Lifetime
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CNB028178254A
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English (en)
Chinese (zh)
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CN1554116A (zh
Inventor
托马斯·S·小林
斯科特·K·波兹德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nxp American Corp
Vlsi Technology Co ltd
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Freescale Semiconductor Inc
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Publication of CN1554116A publication Critical patent/CN1554116A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
CNB028178254A 2001-09-14 2002-08-20 形成具有凹槽的焊盘的方法 Expired - Lifetime CN1296980C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/952,527 US6531384B1 (en) 2001-09-14 2001-09-14 Method of forming a bond pad and structure thereof
US09/952,527 2001-09-14

Publications (2)

Publication Number Publication Date
CN1554116A CN1554116A (zh) 2004-12-08
CN1296980C true CN1296980C (zh) 2007-01-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028178254A Expired - Lifetime CN1296980C (zh) 2001-09-14 2002-08-20 形成具有凹槽的焊盘的方法

Country Status (8)

Country Link
US (1) US6531384B1 (https=)
EP (1) EP1430523A2 (https=)
JP (1) JP4451134B2 (https=)
KR (1) KR100896141B1 (https=)
CN (1) CN1296980C (https=)
AU (1) AU2002323303A1 (https=)
TW (1) TW559965B (https=)
WO (1) WO2003025998A2 (https=)

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US7372153B2 (en) * 2003-10-07 2008-05-13 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit package bond pad having plurality of conductive members
US7214605B2 (en) * 2003-10-09 2007-05-08 Intel Corporation Deposition of diffusion barrier
US7247564B2 (en) * 2004-06-28 2007-07-24 Hewlett-Packard Development Company, L.P. Electronic device
US7213329B2 (en) * 2004-08-14 2007-05-08 Samsung Electronics, Co., Ltd. Method of forming a solder ball on a board and the board
US7429795B2 (en) * 2005-09-27 2008-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure
KR100699865B1 (ko) * 2005-09-28 2007-03-28 삼성전자주식회사 화학기계적 연마를 이용한 자기 정렬 콘택 패드 형성 방법
KR100699892B1 (ko) * 2006-01-20 2007-03-28 삼성전자주식회사 솔더접합신뢰도 개선을 위한 락킹 구조를 갖는 반도체 소자및 인쇄회로기판
US7598620B2 (en) * 2006-05-31 2009-10-06 Hebert Francois Copper bonding compatible bond pad structure and method
JP5208936B2 (ja) * 2006-08-01 2013-06-12 フリースケール セミコンダクター インコーポレイテッド チップ製造および設計における改良のための方法および装置
US7812448B2 (en) * 2006-08-07 2010-10-12 Freescale Semiconductor, Inc. Electronic device including a conductive stud over a bonding pad region
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
EP2135280A2 (en) 2007-03-05 2009-12-23 Tessera, Inc. Chips having rear contacts connected by through vias to front contacts
US8134235B2 (en) * 2007-04-23 2012-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional semiconductor device
EP2183770B1 (en) 2007-07-31 2020-05-13 Invensas Corporation Method of forming through-substrate vias and corresponding decvice
US7888257B2 (en) * 2007-10-10 2011-02-15 Agere Systems Inc. Integrated circuit package including wire bonds
US8183698B2 (en) * 2007-10-31 2012-05-22 Agere Systems Inc. Bond pad support structure for semiconductor device
KR100933685B1 (ko) * 2007-12-18 2009-12-23 주식회사 하이닉스반도체 필링 방지를 위한 본딩패드 및 그 형성 방법
US8053900B2 (en) * 2008-10-21 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias (TSVs) electrically connected to a bond pad design with reduced dishing effect
KR20100060309A (ko) * 2008-11-27 2010-06-07 주식회사 동부하이텍 반도체 소자
JP5353313B2 (ja) * 2009-03-06 2013-11-27 富士通セミコンダクター株式会社 半導体装置
US8259415B2 (en) * 2009-06-22 2012-09-04 Seagate Technology Llc Slider bond pad with a recessed channel
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
JP5610905B2 (ja) * 2010-08-02 2014-10-22 パナソニック株式会社 半導体装置
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
KR101059490B1 (ko) 2010-11-15 2011-08-25 테세라 리써치 엘엘씨 임베드된 트레이스에 의해 구성된 전도성 패드
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
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CN102612262A (zh) * 2011-01-18 2012-07-25 三星半导体(中国)研究开发有限公司 焊盘结构及其制造方法
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US9978637B2 (en) * 2013-10-11 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism for forming patterned metal pad connected to multiple through silicon vias (TSVs)
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JPS63244858A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 金属配線の形成方法
JPH06318590A (ja) * 1993-05-10 1994-11-15 Nec Corp 半導体装置の製造方法
WO2000021126A1 (en) * 1998-10-05 2000-04-13 Kulicke & Soffa Investments, Inc. Semiconductor copper bond pad surface protection

Also Published As

Publication number Publication date
WO2003025998A3 (en) 2003-06-12
EP1430523A2 (en) 2004-06-23
CN1554116A (zh) 2004-12-08
TW559965B (en) 2003-11-01
US20030054626A1 (en) 2003-03-20
JP2005522019A (ja) 2005-07-21
KR20040035779A (ko) 2004-04-29
AU2002323303A1 (en) 2003-04-01
KR100896141B1 (ko) 2009-05-12
WO2003025998A2 (en) 2003-03-27
US6531384B1 (en) 2003-03-11
JP4451134B2 (ja) 2010-04-14

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