AU2001267861A1 - Fabrication process of a semiconductor device - Google Patents
Fabrication process of a semiconductor deviceInfo
- Publication number
- AU2001267861A1 AU2001267861A1 AU2001267861A AU6786101A AU2001267861A1 AU 2001267861 A1 AU2001267861 A1 AU 2001267861A1 AU 2001267861 A AU2001267861 A AU 2001267861A AU 6786101 A AU6786101 A AU 6786101A AU 2001267861 A1 AU2001267861 A1 AU 2001267861A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- fabrication process
- fabrication
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000199736 | 2000-06-30 | ||
JP2000-199736 | 2000-06-30 | ||
PCT/JP2001/005578 WO2002003442A1 (en) | 2000-06-30 | 2001-06-28 | Fabrication process of a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001267861A1 true AU2001267861A1 (en) | 2002-01-14 |
Family
ID=18697707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001267861A Abandoned AU2001267861A1 (en) | 2000-06-30 | 2001-06-28 | Fabrication process of a semiconductor device |
Country Status (9)
Country | Link |
---|---|
US (1) | US6890848B2 (zh) |
EP (1) | EP1226604B1 (zh) |
JP (1) | JP5202784B2 (zh) |
KR (1) | KR100739955B1 (zh) |
CN (1) | CN1194393C (zh) |
AU (1) | AU2001267861A1 (zh) |
DE (1) | DE60126906T2 (zh) |
TW (1) | TW582064B (zh) |
WO (1) | WO2002003442A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100738A (ja) | 2001-09-25 | 2003-04-04 | Jsr Corp | 積層体、積層体の形成方法、絶縁膜ならびに半導体用基板 |
DE60217247T2 (de) | 2001-09-28 | 2007-10-04 | Jsr Corp. | Gestapelte Schicht, isolierender Film und Substrate für Halbleiter |
US7442675B2 (en) * | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6464995A (en) * | 1987-09-07 | 1989-03-10 | Toyo Kanetsu Kk | Simple crane for shifting case |
KR950034495A (ko) * | 1994-04-20 | 1995-12-28 | 윌리엄 이.힐러 | 반도체 장치 제조를 위한 고 수율 광 경화 공정 |
JPH0820692A (ja) * | 1994-07-07 | 1996-01-23 | Nippon Zeon Co Ltd | 環状オレフィン樹脂組成物およびその架橋物 |
JPH11307633A (ja) * | 1997-11-17 | 1999-11-05 | Sony Corp | 低誘電率膜を有する半導体装置、およびその製造方法 |
JPH1064995A (ja) * | 1996-08-23 | 1998-03-06 | Sony Corp | 半導体装置の製造方法 |
US5989998A (en) * | 1996-08-29 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
SG71147A1 (en) * | 1997-08-29 | 2000-03-21 | Dow Corning Toray Silicone | Method for forming insulating thin films |
JP3226021B2 (ja) * | 1997-09-02 | 2001-11-05 | 日本電気株式会社 | 半導体装置の製造方法 |
TW439197B (en) * | 1997-10-31 | 2001-06-07 | Dow Corning | Electronic coating having low dielectric constant |
US6114766A (en) * | 1997-12-18 | 2000-09-05 | Advanced Micro Devices, Inc. | Integrated circuit with metal features presenting a larger landing area for vias |
US6083850A (en) * | 1997-12-18 | 2000-07-04 | Advanced Micro Devices, Inc. | HSQ dielectric interlayer |
JP3690565B2 (ja) * | 1998-06-26 | 2005-08-31 | 富士通株式会社 | 積層構造、配線構造、その製造方法、及び半導体装置 |
JP3657788B2 (ja) * | 1998-10-14 | 2005-06-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP3436221B2 (ja) * | 1999-03-15 | 2003-08-11 | ソニー株式会社 | 半導体装置の製造方法 |
JP4207303B2 (ja) * | 1999-04-07 | 2009-01-14 | ソニー株式会社 | 半導体装置およびその製造方法 |
JP2001044191A (ja) | 1999-07-27 | 2001-02-16 | Sony Corp | 積層絶縁膜とその製造方法および半導体装置とその製造方法 |
JP3769426B2 (ja) * | 1999-09-22 | 2006-04-26 | 東京エレクトロン株式会社 | 絶縁膜形成装置 |
US6521548B2 (en) * | 2001-06-12 | 2003-02-18 | Macronix International Co. Ltd. | Method of forming a spin-on-passivation layer |
-
2001
- 2001-06-28 DE DE60126906T patent/DE60126906T2/de not_active Expired - Lifetime
- 2001-06-28 CN CNB018025986A patent/CN1194393C/zh not_active Expired - Fee Related
- 2001-06-28 JP JP2002507426A patent/JP5202784B2/ja not_active Expired - Fee Related
- 2001-06-28 EP EP01945667A patent/EP1226604B1/en not_active Expired - Lifetime
- 2001-06-28 KR KR1020027002664A patent/KR100739955B1/ko not_active IP Right Cessation
- 2001-06-28 US US10/069,274 patent/US6890848B2/en not_active Expired - Fee Related
- 2001-06-28 TW TW090115777A patent/TW582064B/zh not_active IP Right Cessation
- 2001-06-28 WO PCT/JP2001/005578 patent/WO2002003442A1/en active IP Right Grant
- 2001-06-28 AU AU2001267861A patent/AU2001267861A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP5202784B2 (ja) | 2013-06-05 |
CN1388985A (zh) | 2003-01-01 |
DE60126906T2 (de) | 2007-11-08 |
DE60126906D1 (de) | 2007-04-12 |
KR100739955B1 (ko) | 2007-07-16 |
CN1194393C (zh) | 2005-03-23 |
EP1226604B1 (en) | 2007-02-28 |
US20020164869A1 (en) | 2002-11-07 |
WO2002003442A1 (en) | 2002-01-10 |
EP1226604A1 (en) | 2002-07-31 |
EP1226604A4 (en) | 2004-11-24 |
JP2004503083A (ja) | 2004-01-29 |
US6890848B2 (en) | 2005-05-10 |
KR20020027599A (ko) | 2002-04-13 |
TW582064B (en) | 2004-04-01 |
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