HK1054465A1 - 調整半導體晶片表面的方法 - Google Patents

調整半導體晶片表面的方法

Info

Publication number
HK1054465A1
HK1054465A1 HK03104882.0A HK03104882A HK1054465A1 HK 1054465 A1 HK1054465 A1 HK 1054465A1 HK 03104882 A HK03104882 A HK 03104882A HK 1054465 A1 HK1054465 A1 HK 1054465A1
Authority
HK
Hong Kong
Prior art keywords
modifying
semiconductor wafer
wafer
semiconductor
Prior art date
Application number
HK03104882.0A
Other languages
English (en)
Inventor
J Gagliardi John
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of HK1054465A1 publication Critical patent/HK1054465A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00—Tool surfaces formed with a pattern
HK03104882.0A 2000-04-28 2003-07-08 調整半導體晶片表面的方法 HK1054465A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56097300A 2000-04-28 2000-04-28
PCT/US2000/027091 WO2001084613A1 (en) 2000-04-28 2000-10-02 Method of modifying the surface of a semiconductor wafer

Publications (1)

Publication Number Publication Date
HK1054465A1 true HK1054465A1 (zh) 2003-11-28

Family

ID=24240135

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03104882.0A HK1054465A1 (zh) 2000-04-28 2003-07-08 調整半導體晶片表面的方法

Country Status (9)

Country Link
EP (1) EP1281197A1 (zh)
JP (1) JP2003533023A (zh)
KR (1) KR20020093991A (zh)
CN (1) CN1452784A (zh)
AU (1) AU2000278447A1 (zh)
BR (1) BR0017222A (zh)
CA (1) CA2407300A1 (zh)
HK (1) HK1054465A1 (zh)
WO (1) WO2001084613A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6682575B2 (en) 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
KR100623963B1 (ko) * 2005-01-12 2006-09-19 제일모직주식회사 금속배선 연마용 슬러리 조성물 및 이를 이용한 금속배선연마 방법
CN102891077B (zh) * 2012-09-26 2015-12-09 复旦大学 采用水基原子层沉积技术在石墨烯表面制备高k栅介质的方法
JP6358740B2 (ja) * 2014-04-08 2018-07-18 山口精研工業株式会社 研磨用組成物
JP6358739B2 (ja) * 2014-04-08 2018-07-18 山口精研工業株式会社 研磨用組成物
CN104842265A (zh) * 2015-06-18 2015-08-19 上海申航热能科技有限公司 管内壁抛光用磨头及配方
CN106002498B (zh) * 2016-08-01 2018-04-06 中国电子科技集团公司第四十六研究所 一种有机dast晶体的表面研磨工艺方法
CN113881349B (zh) * 2021-09-01 2022-10-21 上海工程技术大学 用于碳化硅晶片硅表面化学机械抛光的抛光液及抛光方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5704987A (en) * 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
JP2002517593A (ja) * 1998-06-10 2002-06-18 ロデール ホールディングス インコーポレイテッド 金属ｃｍｐにおける研磨用組成物および研磨方法

Also Published As

Publication number Publication date
JP2003533023A (ja) 2003-11-05
AU2000278447A1 (en) 2001-11-12
CN1452784A (zh) 2003-10-29
WO2001084613A1 (en) 2001-11-08
KR20020093991A (ko) 2002-12-16
BR0017222A (pt) 2003-01-07
EP1281197A1 (en) 2003-02-05
CA2407300A1 (en) 2001-11-08

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