CN1452784A - 半导体片表面修整的方法 - Google Patents
半导体片表面修整的方法 Download PDFInfo
- Publication number
- CN1452784A CN1452784A CN00819480A CN00819480A CN1452784A CN 1452784 A CN1452784 A CN 1452784A CN 00819480 A CN00819480 A CN 00819480A CN 00819480 A CN00819480 A CN 00819480A CN 1452784 A CN1452784 A CN 1452784A
- Authority
- CN
- China
- Prior art keywords
- polar compound
- alcohol
- abrasive
- semiconductor chip
- combination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000000203 mixture Substances 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 125000000524 functional group Chemical group 0.000 claims abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- 239000006061 abrasive grain Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 10
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 7
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 150000002168 ethanoic acid esters Chemical class 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- 125000005647 linker group Chemical group 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical group O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 21
- 238000005498 polishing Methods 0.000 description 20
- 239000000243 solution Substances 0.000 description 17
- 239000000126 substance Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 238000007521 mechanical polishing technique Methods 0.000 description 5
- -1 3-butoxy-1-propyl Chemical group 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000010695 polyglycol Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- XCCFSZODNJHPEF-UHFFFAOYSA-N 2-carboxybenzoate;hydron;potassium Chemical compound [K].OC(=O)C1=CC=CC=C1C(O)=O XCCFSZODNJHPEF-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000001118 alkylidene group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 150000003950 cyclic amides Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- GFMIDCCZJUXASS-UHFFFAOYSA-N hexane-1,1,6-triol Chemical compound OCCCCCC(O)O GFMIDCCZJUXASS-UHFFFAOYSA-N 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- HGPXWXLYXNVULB-UHFFFAOYSA-M lithium stearate Chemical compound [Li+].CCCCCCCCCCCCCCCCCC([O-])=O HGPXWXLYXNVULB-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010338 mechanical breakdown Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 description 1
- 229950006389 thiodiglycol Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical compound OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
公开了一种对半导体片的表面进行修整的方法。所述方法包含：(a)在组合物存在的条件下使半导体片与固定的研磨体接触，该组合物包含水和具有1－10个选自－OH、－OOH、＝O及它们的组合的官能团以及1－10个选自－CH2－、－CH2O－、－C2H4O－、－C3H6O－及它们的组合的连接基团的极性组分；(b)使半导体片和固定的研磨体相对运动，以对半导体片的表面进行修整。
Description
技术领域
本发明涉及半导体片的修整。
背景技术
用于制造半导体的片经常需要表面修整，例如，在制造过程中的某个时间抛光及平面化。传统的抛光方法包括一般在水性溶液存在下使研磨基片和半导体片相对运动。
可使用抛光步骤从半导体片表面除去最高的点。抛光操作在未加工及部分加工的半导体片上进行。典型的未加工片是晶体硅或另一种半导体材料，例如，砷化镓。典型的半导体片在准备抛光时具有绝缘材料的顶层，这些绝缘材料如玻璃、二氧化硅或者贴合覆盖一层或多层图案层的金属。下面的图案层造成了局部凸起。抛光把局部突出弄平，从而理想地使半导体片的表面平坦或平面化。
在某些情况下，通过在化学机械抛光过程中溶液与固定的研磨体的组合作用来完成抛光。作为一个例子，当溶液中的碱性化合物与二氧化硅反应形成氢氧化硅的表层时，发生二氧化硅基片的化学抛光。当研磨体从基片表面除去金属的氢氧化物时，发生了机械过程。
现有大量的化学机械抛光技术。一些化学机械抛光技术包括待抛光物件或抛光垫片、或者这两者的轨道或摆动运动。其它化学机械抛光技术包括带状抛光垫片在待抛光物件下面向前平移，以及待抛光物件沿带状垫片表面旋转、摆动或旋转和摆动。
在某些化学机械抛光技术中，淤浆分布在垫片与待抛光表面之间。这些淤浆通常含有水和研磨颗粒。
在其它化学机械抛光技术中，磨料固定在基片上，抛光溶液分布在固定的磨料与待抛光表面之间。
通常，抛光垫片和待抛光基片是疏水的，抑制了湿润。而湿润便于新鲜化学物质传输进入研磨表面与待平面化的半导体片表面之间的区域。抛光液还能有助于从正在抛光的基片的表面除去碎屑及溶解材料。存在于组合物中的表面活性剂能抑制除去的速率。当溶液不湿润研磨表面时，抛光过程也被抑制。
发明内容
一方面，本发明以半导体片的表面修整的方法为特征，该方法包括(a)在组合物存在的条件下使半导体片与固定的研磨体接触，该组合物包含水和具有1-10个选自-OH、-OOH、＝O及它们的组合的官能团以及1-10个选自-CH2-、-CH2O-、-C2H4O-、-C3H6O-及它们的组合的连接基团的极性组分；(b)使半导体片及固定的研磨体相对运动，对半导体片的表面进行修整。在某些实施方式中，极性组分不超过8个碳原子。在其它实施方式中，极性组分选自醇、二元醇、酮、醚、乙酸酯以及它们的组合。
在另一个实施方式中，极性组分包括选自甲醇、乙醇、丙醇、异丙醇、丁醇、异丁醇及它们的混合物的醇。在某些实施方式中，极性组分选自丙酮、乙酸乙酯、乙酸溶纤剂及它们的混合物。
在一个实施方式中，固定的研磨体包括具有以图案排列的许多研磨颗粒和粘合剂的有三维结构的研磨表面。在某些实施方式中，固定的磨料包括选自二氧化铈、二氧化硅、氧化铝、氧化钛、氧化锆、氧化锰及它们的混合物的颗粒。
在其它实施方式中，修整方法包括用化学和机械方法对半导体片的表面进行修整。
在另一个实施方式中，固定的研磨体包括背衬和在背衬表面上的研磨剂涂料，研磨剂涂料包括研磨颗粒和粘合剂。
另一方面，本发明以第一物件表面修整的方法为特征，该方法包括(a)在组合物存在的条件下使第一物件与固定的研磨体接触，该组合物包含水和具有1-10个选自-OH、-OOH、＝O及它们的组合的官能团以及1-10个选自-CH2-、-CH2O-、-C2H4O-、-C3H6O-及它们的组合的连接基团的极性组分；(b)使第一物件及固定的研磨体相对运动，对第一物件的表面进行修整。在一个实施方式中，极性组分不超过8个碳原子。在其它实施方式中，极性组分选自醇、二元醇、酮、醚、乙酸酯以及它们的组合。
在某些实施方式中，极性组分包括选自甲醇、乙醇、丙醇、异丙醇、丁醇、异丁醇及它们的混合物的醇。在另一个实施方式中，极性组分选自丙酮、乙酸乙酯、乙酸溶纤剂及它们的混合物。
在另一个实施方式中，固定的研磨体包括具有以图案排列的许多研磨颗粒和粘合剂的有三维结构的研磨表面。
该方法中使用的组合物较好地显示了相对于水表面张力减小，并能够湿润疏水基片。该方法特别适于使包括疏水氧化物磨料，例如氧化铈颗粒的磨料湿润。该方法也通过在卷材范围内保持溶液使之不渗漏到卷材下面而导致机械故障，使卷材抛光变得容易。湿润的改善也提供了较好的除去表面材料的速率。在化学机械平面化操作中，组合物也提供了良好的低振动和低摩擦。
从以下对本发明较佳实施方式的描述以及权利要求书中，本发明的其它特征和优点将是显而易见的。
具体实施方式
本发明人发现当抛光水溶液与疏水卷材接触时，它会形成大的液滴。在抛光中，大液滴会在研磨表面移动。结果，在抛光头作用下溶液从研磨表面的边缘流出，渗入研磨表面的抛光垫片与固定的研磨抛光垫片位于其上的次垫片之间。这会导致抛光垫片粘着在次垫片上，从而造成机械问题。
半导体片表面修整的方法包括在含水和极性组分的组合物存在下使半导体片与固定的研磨体接触，并且使半导体片和固定的研磨体中的至少一个作相对运动，以对半导体片进行表面修整。与先前的处理方法相比，该方法较好地对该片表面进行了修整，得到了更平坦或均匀、或更不粗糙、或者它们的组合效果的表面。
极性组分较好地提供了能够充分湿润要修整的疏水基片及固定的研磨垫片的组合物。极性组分包括1-10个选自-OH、-OOH、＝O及它们的组合的官能团，以及1-10个选自-CH2-、-CH2O-、-C2H4O-、-C3H6O-及它们的组合的连接基团。较佳的极性组分不超过8个碳原子。
有用的极性组分的例子包括：醇，例如甲醇、乙醇、丙醇、异丙醇、正丁醇、仲丁醇、叔丁醇、异丁醇和辛醇；乙酸酯，包括乙酸甲酯、乙酸乙酯和乙酸溶纤剂；酮，例如丙酮；酮醇，例如双丙酮醇；醚，包括例如甲醚；含C2-C6亚烷基的亚烷基二醇或硫甘醇，例如乙二醇、丙二醇、三丙二醇、丁二醇、戊二醇和己二醇；聚亚烷基二醇和硫甘醇，例如二乙二醇、硫二甘醇、聚乙二醇和聚丙二醇；多元醇，例如甘油和1，2，6-己三醇；低级烷基二醇和聚二醇醚，例如2-甲氧基乙醇、2-(2-甲氧基乙氧基)乙醇、2-(2-乙氧基乙氧基)乙醇、2-(2-丁氧基乙氧基)乙醇、3-丁氧基-1-丙醇、2-〔2-(2-甲氧基乙氧基)-乙氧基〕乙醇、2-〔2-(2-乙氧基乙氧基)乙氧基〕乙醇；环酯和环酰胺，例如取代的吡咯烷酮(pyrrolidone)；环丁砜(sulfolane)；多官能度的极性组分；以及它们的混合物。
选择适宜基片修整的组合物的pH值。有用的组合物的pH值大于1.5，更好的是约3-约12.5，最好的是约5-约12。组合物中可含有添加剂以达到所需的pH值。该添加剂的例子包括：碱，例如氢氧化钾和氢氧化铵；以及酸，例如KIO3、邻苯二甲酸钾、邻苯二甲酸、磷酸、硝酸和硫酸。组合物中也可含有缓冲剂以保持所需的pH。
该组合物还可含有其它组分，包括：例如液体蚀刻剂、例如强酸(例如，硫酸和氢氟酸)和氧化剂(例如，过氧化物)、润滑剂以及它们的组合。适宜的润滑剂的例子包括脂肪酸的金属盐，包括例如硬脂酸锌、硬脂酸钙和硬脂酸锂、石墨、云母、二硫化钼、滑石、聚酰胺、氮化硼、硫化物、石蜡、硅氧烷化合物、聚乙酸乙烯酯、聚乙烯醇、聚合物以及它们的组合。
该方法适宜使用各种固定的研磨体。有用的固定研磨体的例子包括那些呈垫片或卷材例如传动皮带的形状的固定研磨体。固定的研磨体最好包括大量附着在基片例如背衬上的粘合剂中的研磨颗粒。粘合剂中的研磨颗粒可以是研磨涂层(例如，连续或不连续涂层)、研磨复合物(例如，成形体)或它们的组合的形式。研磨组分(例如，颗粒和复合物)可以图案或任意图形排列。固定的研磨体的结构包括凸起部分和凹陷部分。固定的研磨体也可以是三维的，以使其包括大量的延伸穿过至少部分其厚度的研磨颗粒，从而在表面修整过程中除去一些研磨颗粒，露出能起表面修整作用的另外的研磨颗粒。有用的固定研磨体的例子描述于美国专利No.5,958,794、5,692,950和5,990,012。
研磨体可包括任意数量的不同研磨颗粒。适宜的研磨颗粒包括：例如二氧化铈、二氧化硅、氧化铝、氧化铁、氧化铬、氧化钛、氧化锡、氧化锆、氧化锰以及它们的组合。其它有用的研磨颗粒包括熔凝氧化铝、热处理氧化铝、白色熔凝氧化铝、黑色碳化硅、绿色碳化硅、二硼化钛、碳化硼、氮化硅、碳化钨、碳化钛、金刚石、立方氮化硼、六方形氮化硼、石榴石、熔凝氧化铝氧化锆、得自氧化铝系溶胶凝胶的研磨颗粒以及它们的组合。
为了半导体片表面修整的研磨体与半导体片中的至少一个的相对运动可以是旋转运动，例如，以圆形、螺线形、椭圆形或非一致形状、以八字形或螺旋形旋转、平移、振动、摆动、或它们的组合。较佳的运动方式包括固定的研磨体和半导体片中的一个或两个的旋转运动。例如，半导体片和研磨体能以圆形朝相同方向旋转。或者，半导体片和固定的研磨体能朝相反方向旋转。适宜使固定的研磨体与半导体片中的至少一个相对运动以对基片表面进行修整的方法的例子描述于美国专利No.5,871,390、5,961,372、6,000,997、5,851,136、5,335,453、WO99/06182、5,759,918和5,938,884。
本方法可用于对各类物件包括例如半导体片和半导体片的组件的表面进行修整。半导体片可以呈各种形式，例如坯片(例如，加工前的片，例如，在添加外形细部如金属化和绝缘区域之前)或加工片(例如，已经进行了一步或多步加工步骤，向片的表面添加了外形细部的半导体片)。半导体片可包括大量材料，包括例如，硅、二氧化硅、氮化硅、砷化镓、铜、铝、钨、钛、氮化钛、聚合物以及它们的组合。
以下，将通过实施例详细描述本发明。除非另有说明，所有的比率和百分率以重量计。
实施例
实施例1
将表1所列的化学品以10体积％加入蒸馏水中，然后放置在SWR 159氧化铈固定磨料(明尼苏达州St.Paul市3M公司产品)上。观察湿润性质并列在表1中。
表1
| 化学品 | 观察 |
| 蒸馏水 | 溶液在基片表面形成液珠 |
| 丙酮 | 溶液在基片表面形成平坦的膜 |
| 甲醇 | 溶液在基片表面形成平坦的膜 |
| 乙醇 | 溶液在基片表面形成平坦的膜 |
| 丁醇 | 溶液在基片表面形成平坦的膜 |
| 异丙醇 | 溶液在基片表面形成平坦的膜 |
| 乙酸乙酯 | 溶液在基片表面形成平坦的膜 |
| 乙酸溶纤剂 | 溶液在基片表面形成平坦的膜 |
| 三丙二醇甲醚 | 溶液在基片表面形成平坦的膜 |
| 聚环氧乙烷 | 溶液在基片表面形成平坦的膜 |
其它实施方式包含在以下的权利要求书中。例如，虽然是描述关于半导体片的方法，但是要修整的物件可以是各种物件，并可包括如硅、二氧化硅、氮化硅、砷化镓、铜、铝、钨、钛、氮化钛、聚合物以及它们的组合的材料。
Claims (16)
1.一种对半导体片表面进行修整的方法，所述方法包含：
(a)在下述组合物的存在下使半导体片与固定的研磨体接触，所述组合物包含水和具有1-10个选自-OH、-OOH、＝O及它们的组合的官能团以及1-10个选自-CH2-、-CH2O-、-C2H4O-、-C3H6O-及它们的组合的连接基团的极性组分；
(b)使半导体片和固定的研磨体相对运动，对半导体片的表面进行修整。
2.根据权利要求1所述的方法，其特征在于：所述的极性组分含有不超过8个的碳原子。
3.根据权利要求1所述的方法，其特征在于：所述的极性组分选自醇、二元醇、酮、醚、乙酸酯以及它们的组合。
4.根据权利要求1所述的方法，其特征在于：所述的极性组分包含选自甲醇、乙醇、丙醇、异丙醇、丁醇、异丁醇及它们的混合物的醇。
5.根据权利要求1所述的方法，其特征在于：所述的极性组分选自丙酮、乙酸乙酯、乙酸溶纤剂及它们的混合物。
6.根据权利要求1所述的方法，其特征在于：所述的固定研磨体包含含有以图案排列的许多研磨颗粒和粘合剂的有三维结构的研磨表面。
7.根据权利要求1所述的方法，其特征在于：所述的固定磨料包含选自二氧化铈、二氧化硅、氧化铝、氧化钛、氧化锆、氧化锰以及它们的混合物的颗粒。
8.根据权利要求6所述的方法，其特征在于：所述的研磨颗粒选自二氧化铈、二氧化硅、氧化铝、氧化钛、氧化锆、氧化锰以及它们的混合物。
9.根据权利要求1所述的方法，其特征在于：所述的方法包含用化学和机械方法修整半导体片的表面。
10.根据权利要求1所述的方法，其特征在于：所述的固定研磨体包含背衬和在所述背衬表面上的研磨涂层，所述研磨涂层包括研磨颗粒和粘合剂。
11.一种对第一物件的表面进行修整的方法，所述方法包含：
(a)在下述组合物的存在下使第一物件与固定的研磨体接触，所述组合物包含水和具有1-10个选自-OH、-OOH、＝O及它们的组合的官能团以及1-10个选自-CH2-、-CH2O-、-C2H4O-、-C3H6O-及它们的组合的连接基团的极性组分；
(b)使第一物件和固定的研磨体相对运动，对第一物件的表面进行修整。
12.根据权利要求11所述的方法，其特征在于：所述的极性组分含有不超过8个的碳原子。
13.根据权利要求11所述的方法，其特征在于：所述的极性组分选自醇、二元醇、酮、醚、乙酸酯以及它们的组合。
14.根据权利要求11所述的方法，其特征在于：所述的极性组分包含选自甲醇、乙醇、丙醇、异丙醇、丁醇、异丁醇以及它们的混合物的醇。
15.根据权利要求11所述的方法，其特征在于：所述的极性组分选自丙酮、乙酸乙酯、乙酸溶纤剂及它们的混合物。
16.根据权利要求11所述的方法，其特征在于：所述的固定研磨体包含含有以图案排列的许多研磨颗粒和粘合剂的有三维结构的研磨表面。
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| US56097300A | 2000-04-28 | 2000-04-28 | |
| US09/560,973 | 2000-04-28 |
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| CN1452784A true CN1452784A (zh) | 2003-10-29 |
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| CN00819480A Pending CN1452784A (zh) | 2000-04-28 | 2000-10-02 | 半导体片表面修整的方法 |
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| Country | Link |
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| EP (1) | EP1281197A1 (zh) |
| JP (1) | JP2003533023A (zh) |
| KR (1) | KR20020093991A (zh) |
| CN (1) | CN1452784A (zh) |
| AU (1) | AU2000278447A1 (zh) |
| BR (1) | BR0017222A (zh) |
| CA (1) | CA2407300A1 (zh) |
| HK (1) | HK1054465A1 (zh) |
| WO (1) | WO2001084613A1 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104842265A (zh) * | 2015-06-18 | 2015-08-19 | 上海申航热能科技有限公司 | 管内壁抛光用磨头及配方 |
| CN106002498A (zh) * | 2016-08-01 | 2016-10-12 | 中国电子科技集团公司第四十六研究所 | 一种有机dast晶体的表面研磨工艺方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6682575B2 (en) | 2002-03-05 | 2004-01-27 | Cabot Microelectronics Corporation | Methanol-containing silica-based CMP compositions |
| KR100623963B1 (ko) * | 2005-01-12 | 2006-09-19 | 제일모직주식회사 | 금속배선 연마용 슬러리 조성물 및 이를 이용한 금속배선연마 방법 |
| CN102891077B (zh) * | 2012-09-26 | 2015-12-09 | 复旦大学 | 采用水基原子层沉积技术在石墨烯表面制备高k栅介质的方法 |
| JP6358740B2 (ja) * | 2014-04-08 | 2018-07-18 | 山口精研工業株式会社 | 研磨用組成物 |
| JP6358739B2 (ja) * | 2014-04-08 | 2018-07-18 | 山口精研工業株式会社 | 研磨用組成物 |
| CN113881349B (zh) * | 2021-09-01 | 2022-10-21 | 上海工程技术大学 | 用于碳化硅晶片硅表面化学机械抛光的抛光液及抛光方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3735158A1 (de) * | 1987-10-16 | 1989-05-03 | Wacker Chemitronic | Verfahren zum schleierfreien polieren von halbleiterscheiben |
| US5614444A (en) * | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
| US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
| US5972792A (en) * | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
| JP2002517593A (ja) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | 金属ｃｍｐにおける研磨用組成物および研磨方法 |
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2000
- 2000-10-02 CN CN00819480A patent/CN1452784A/zh active Pending
- 2000-10-02 AU AU2000278447A patent/AU2000278447A1/en not_active Abandoned
- 2000-10-02 JP JP2001581336A patent/JP2003533023A/ja active Pending
- 2000-10-02 KR KR1020027014464A patent/KR20020093991A/ko not_active Application Discontinuation
- 2000-10-02 CA CA002407300A patent/CA2407300A1/en not_active Abandoned
- 2000-10-02 WO PCT/US2000/027091 patent/WO2001084613A1/en not_active Application Discontinuation
- 2000-10-02 EP EP00968554A patent/EP1281197A1/en not_active Withdrawn
- 2000-10-02 BR BR0017222-7A patent/BR0017222A/pt not_active Application Discontinuation
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104842265A (zh) * | 2015-06-18 | 2015-08-19 | 上海申航热能科技有限公司 | 管内壁抛光用磨头及配方 |
| CN106002498A (zh) * | 2016-08-01 | 2016-10-12 | 中国电子科技集团公司第四十六研究所 | 一种有机dast晶体的表面研磨工艺方法 |
| CN106002498B (zh) * | 2016-08-01 | 2018-04-06 | 中国电子科技集团公司第四十六研究所 | 一种有机dast晶体的表面研磨工艺方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003533023A (ja) | 2003-11-05 |
| CA2407300A1 (en) | 2001-11-08 |
| AU2000278447A1 (en) | 2001-11-12 |
| BR0017222A (pt) | 2003-01-07 |
| HK1054465A1 (zh) | 2003-11-28 |
| EP1281197A1 (en) | 2003-02-05 |
| WO2001084613A1 (en) | 2001-11-08 |
| KR20020093991A (ko) | 2002-12-16 |
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