BR0017222A - Métodos para modificar uma superfìcie, de uma pastilha de semicondutor, e de um primeiro artigo - Google Patents

Métodos para modificar uma superfìcie, de uma pastilha de semicondutor, e de um primeiro artigo

Info

Publication number
BR0017222A
BR0017222A BR0017222-7A BR0017222A BR0017222A BR 0017222 A BR0017222 A BR 0017222A BR 0017222 A BR0017222 A BR 0017222A BR 0017222 A BR0017222 A BR 0017222A
Authority
BR
Brazil
Prior art keywords
modifying
article
methods
semiconductor
semiconductor wafer
Prior art date
Application number
BR0017222-7A
Other languages
English (en)
Inventor
John J Gagliardi
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of BR0017222A publication Critical patent/BR0017222A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00—Tool surfaces formed with a pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

"MéTODOS PARA MODIFICAR UMA SUPERFìCIE, DE UMA PASTILHA DE SEMICONDUTOR, E DE UM PRIMEIRO ARTIGO". é apresentado um método para modificar a superfície de uma pastilha de um semicondutor. O método inclui: (a) o contato da pastilha com um artigo abrasivo fixo na presença de uma composição que inclui água e um componente polar tendo 1 a 10 grupos funcionais escolhidos do grupo consistindo de -OH, -OOH, =O e combinações dos mesmos e 1 a 10 grupos consecutivos escolhidos do grupo que consiste de -CH2-, -C2H4O-, C3H6O- e combinações dos mesmos; e (b) mover relativamente a pastilha do semicondutor e o artigo abrasivo fixo, para modificar a superfície da pastilha do semicondutor.
BR0017222-7A 2000-04-28 2000-10-02 Métodos para modificar uma superfìcie, de uma pastilha de semicondutor, e de um primeiro artigo BR0017222A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56097300A 2000-04-28 2000-04-28
PCT/US2000/027091 WO2001084613A1 (en) 2000-04-28 2000-10-02 Method of modifying the surface of a semiconductor wafer

Publications (1)

Publication Number Publication Date
BR0017222A true BR0017222A (pt) 2003-01-07

Family

ID=24240135

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0017222-7A BR0017222A (pt) 2000-04-28 2000-10-02 Métodos para modificar uma superfìcie, de uma pastilha de semicondutor, e de um primeiro artigo

Country Status (9)

Country Link
EP (1) EP1281197A1 (pt)
JP (1) JP2003533023A (pt)
KR (1) KR20020093991A (pt)
CN (1) CN1452784A (pt)
AU (1) AU2000278447A1 (pt)
BR (1) BR0017222A (pt)
CA (1) CA2407300A1 (pt)
HK (1) HK1054465A1 (pt)
WO (1) WO2001084613A1 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6682575B2 (en) 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
KR100623963B1 (ko) * 2005-01-12 2006-09-19 제일모직주식회사 금속배선 연마용 슬러리 조성물 및 이를 이용한 금속배선연마 방법
CN102891077B (zh) * 2012-09-26 2015-12-09 复旦大学 采用水基原子层沉积技术在石墨烯表面制备高k栅介质的方法
JP6358740B2 (ja) * 2014-04-08 2018-07-18 山口精研工業株式会社 研磨用組成物
JP6358739B2 (ja) * 2014-04-08 2018-07-18 山口精研工業株式会社 研磨用組成物
CN104842265A (zh) * 2015-06-18 2015-08-19 上海申航热能科技有限公司 管内壁抛光用磨头及配方
CN106002498B (zh) * 2016-08-01 2018-04-06 中国电子科技集团公司第四十六研究所 一种有机dast晶体的表面研磨工艺方法
CN113881349B (zh) * 2021-09-01 2022-10-21 上海工程技术大学 用于碳化硅晶片硅表面化学机械抛光的抛光液及抛光方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5704987A (en) * 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
JP2002517593A (ja) * 1998-06-10 2002-06-18 ロデール ホールディングス インコーポレイテッド 金属ｃｍｐにおける研磨用組成物および研磨方法

Also Published As

Publication number Publication date
JP2003533023A (ja) 2003-11-05
CA2407300A1 (en) 2001-11-08
AU2000278447A1 (en) 2001-11-12
HK1054465A1 (zh) 2003-11-28
EP1281197A1 (en) 2003-02-05
WO2001084613A1 (en) 2001-11-08
KR20020093991A (ko) 2002-12-16
CN1452784A (zh) 2003-10-29

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal acc. article 33 of ipl - extension of time limit for request of examination expired