EP1281197A1 - Method of modifying the surface of a semiconductor wafer - Google Patents
Method of modifying the surface of a semiconductor waferInfo
- Publication number
- EP1281197A1 EP1281197A1 EP00968554A EP00968554A EP1281197A1 EP 1281197 A1 EP1281197 A1 EP 1281197A1 EP 00968554 A EP00968554 A EP 00968554A EP 00968554 A EP00968554 A EP 00968554A EP 1281197 A1 EP1281197 A1 EP 1281197A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- group
- wafer
- polar component
- article
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 125000000524 functional group Chemical group 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 150000002170 ethers Chemical class 0.000 claims description 6
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 5
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 5
- 150000001298 alcohols Chemical class 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 150000002334 glycols Chemical class 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 37
- 238000005498 polishing Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 9
- -1 e.g. Chemical compound 0.000 description 8
- 238000009736 wetting Methods 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 238000007521 mechanical polishing technique Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical class N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- 229940043375 1,5-pentanediol Drugs 0.000 description 1
- FWJIUZVUIOHVKD-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO.CCCCOCCOCCO FWJIUZVUIOHVKD-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Chemical class 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical class [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 239000008116 calcium stearate Chemical class 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 150000003950 cyclic amides Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- GOMCKELMLXHYHH-UHFFFAOYSA-L dipotassium;phthalate Chemical compound [K+].[K+].[O-]C(=O)C1=CC=CC=C1C([O-])=O GOMCKELMLXHYHH-UHFFFAOYSA-L 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010439 graphite Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- HGPXWXLYXNVULB-UHFFFAOYSA-M lithium stearate Chemical class [Li+].CCCCCCCCCCCCCCCCCC([O-])=O HGPXWXLYXNVULB-UHFFFAOYSA-M 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000010445 mica Chemical class 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical class S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- WCVRQHFDJLLWFE-UHFFFAOYSA-N pentane-1,2-diol Chemical compound CCCC(O)CO WCVRQHFDJLLWFE-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920002647 polyamide Chemical class 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Chemical class 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Chemical class 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 description 1
- 229950006389 thiodiglycol Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Chemical class 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical class [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D2203/00—Tool surfaces formed with a pattern
Definitions
- the invention relates to modifying a semiconductor wafer.
- Wafers used in the fabrication of semiconductors often require surface modification, e.g., polishing and planarization, at some point during the fabrication process.
- Traditional polishing methods include moving an abrasive substrate and the wafer in relation to each other, typically in the presence of a water-based solution. Polishing processes can be used to remove the highest points from the surface of a wafer. Polishing operations are performed on unprocessed and partially processed wafers.
- a typical unprocessed wafer is crystalline silicon or another semiconductor material, e.g., gallium arsenide.
- a typical wafer when ready for polishing has a top layer of a dielectric material such as glass, silicon dioxide or a metal conformally overlying one or more patterned layers.
- the underlying patterned layers create local protrusions. Polishing smoothes the local features so that ideally the surface of the wafer is flat or planarized.
- polishing is achieved through the solution working in combination with the fixed abrasive article in a chemical mechanical polishing process.
- the chemical polishing of a silicon dioxide substrate occurs when a basic compound in a solution reacts with the silicon dioxide to form a surface layer of silicon hydroxides.
- the mechanical process occurs when an abrasive article removes the metal hydroxides from the surface of the substrate.
- Some chemical mechanical polishing techniques include orbiting or oscillating motions of either the article to be polished or of the polishing pad, or both.
- Other chemical mechanical polishing techniques include a belt-shaped polishing pad that is advanced translationally under the article to be polished, and the article to be polished is rotated, oscillated or both across the surface of the belt-shaped pad.
- a slurry is distributed between a pad and the surface to be polished. These slurries often contain water and abrasive particles.
- the abrasive is fixed on a substrate and a polishing solution is distributed between the fixed abrasive and the surface to be polished.
- the polishing pad and the substrate to be polished are hydrophobic, which inhibits wetting. Wetting facilitates the transport of fresh chemistry into the region between the abrasive surface and the surface of the wafer to be planarized.
- the polishing liquid can also assist in the removal of debris and soluble material removed from the surface of the substrate being polished. Surfactants present in the composition can inhibit the removal rate. When a solution does not wet the abrasive surface, the polishing process can also be inhibited.
- the polar component includes no greater than 8 carbon atoms.
- the polar component is selected from the group consisting of alcohols, glycols, ketones, ethers, acetates, and combinations thereof.
- the polar component includes an alcohol selected from the group consisting of methanol, ethanol, propanol, isopropanol, butanol, isobutanol and mixtures thereof. In some embodiments, the polar component is selected from the group consisting of acetone, ethyl acetate, cellosolve acetate, and mixtures thereof.
- the fixed abrasive article includes a three-dimensional textured abrasive surface having a plurality of abrasive particles and a binder arranged in a pattern.
- the fixed abrasive comprises particles selected from the group consisting of ceria, silica, alumina, titania, zirconia, manganese oxide, and mixtures thereof.
- the method includes chemically and mechanically modifying the surface of the wafer.
- the fixed abrasive article includes a backing and an abrasive coating on a surface of the backing, and the abrasive coating includes abrasive particles and a binder.
- the polar component includes no greater than 8 carbon atoms.
- the polar component is selected from the group consisting of alcohols, glycols, ketones, ethers, acetates, and combinations thereof.
- the polar component includes an alcohol selected from the group consisting of methanol, ethanol, propanol, isopropanol, butanol, isobutanol and mixtures thereof.
- the polar component is selected from the group consisting of acetone, ethyl acetate, cellosolve acetate, and mixtures thereof.
- the fixed abrasive article includes a three- dimensional textured abrasive surface comprising a plurality of abrasive particles and a binder arranged in a pattern.
- the composition used in the method preferably exhibits reduced surface tension relative to water and is able to wet hydrophobic substrates.
- the method is particularly well suited to wetting abrasives that include hydrophobic oxide abrasives, e.g., cerium oxide particles.
- the method also facilitates web polishing by maintaining the solution within the confines of the web such that it does not seep underneath the web where it might cause mechanical difficulties.
- the improved wetting also provides good rates of removal of surface material.
- the composition also provides good low vibration and friction during chemical mechanical planarization operations.
- aqueous polishing solutions tend to form large beads of liquid when in contact with a hydrophobic web.
- the large beads tend to be mobile on the abrasive surface during polishing.
- the solution travels beyond the edge of the abrasive surface and seeps between the abrasive surface polishing pad and the sub pad on which the fixed abrasive polishing pad sits. This can cause the polishing pad to stick to the sub pad, which in turn causes mechanical problems.
- the method of modifying a surface of a semiconductor wafer includes contacting the wafer with a fixed abrasive article in the presence of a composition that includes water and a polar component, and moving at least one of the wafer and the fixed abrasive article relative to each other so as to modify the surface of the wafer.
- the method preferably modifies the surface of the wafer to achieve a surface that is more planar or uniform, or less rough, or a combination thereof, relative to the wafer surface prior to treatment.
- the polar component preferably provides a composition that is capable of sufficiently wetting the hydrophobic substrate to be modified as well as the fixed abrasive pad.
- the polar component includes no greater than 8 carbon atoms.
- useful polar components include alcohols, e.g., methanol, ethanol, propanol, isopropanol, n-butanol, sec-butanol, tert-butanol, isobutanol, and octanol; acetates including methyl acetate, ethyl acetate, and cello solve acetate; ketones, e.g., acetone; ketone alcohols, e.g. diacetone alcohol; ethers including, e.g., methyl ether; alkylene glycols or thioglycols containing a C 2 - C 6 alkylene group, e.g.
- alcohols e.g., methanol, ethanol, propanol, isopropanol, n-butanol, sec-butanol, tert-butanol, isobutanol, and octanol
- poly(alkylene-glycol)s and thioglycols e.g. diethylene glycol, thiodiglycol, polyethylene glycol and polypropylene glycol
- polyols e.g.
- glycerol and 1,2,6-hexanetriol and lower alkyl glycol and polyglycol ethers, e.g.2-methoxyethanol, 2-(2-methoxyethoxy)ethanol, 2-(2-ethoxyethoxy)ethanol, 2-(2-butoxyethoxy)ethanol,3-butoxypropan-l-ol, 2-[2- (2-methoxyethoxy)-ethoxy]ethanol, 2-[2-(2-ethoxyethoxy)ethoxy]-ethanol; cyclic esters and cyclic amides, e.g. substituted pyrollidones; sulpholane; multiple functionality polar components; and mixtures thereof.
- lower alkyl glycol and polyglycol ethers e.g.2-methoxyethanol, 2-(2-methoxyethoxy)ethanol, 2-(2-ethoxyethoxy)ethanol, 2-(2-butoxyethoxy)ethanol,3-butoxypropan-l-ol, 2-[2- (2-methoxye
- the pH of the composition is selected to be suitable for the substrate being modified.
- Useful compositions have a pH of greater than 1.5, more preferably from about 3 to about 12.5, most preferably from about 5 to about 12.
- Additives can be included in the composition to achieve a desired pH. Examples of such additives include bases, e.g., potassium hydroxide and ammonium hydroxide, and acids, e.g., KIO 3 , potassium phthalate, phthalic acid, phosphoric acid, nitric acid, and sulfuric acid. Buffers can also be included in the composition to maintain the desired pH.
- the composition may also include other components including, e.g., liquid etchants, e.g., strong acids (e.g., sulfuric acid and hydrofluoric acid) and oxidizing gents (e.g., peroxides), lubricants and combinations thereof
- suitable lubricants include metal salts of fatty acids including, e.g., zinc stearate, calcium stearate and lithium stearate, graphite, mica, molybdenum disulfide, talc, polyamides, boron nitride, sulfides, waxes, silicone compounds, polyvinyl acetate, polyvinyl alcohols, polymers, and combinations thereof.
- the method is suitable for use with a variety of fixed abrasive articles.
- useful fixed abrasive articles include those fixed abrasive articles that are in the form of a pad or a web, e.g., a continuous belt.
- the fixed-abrasive article preferably includes a number of abrasive particles in a binder attached to a substrate, e.g., a backing.
- the abrasive particles in the binder may be in the form of an abrasive coating (e.g., a continuous or discontinuous coating), abrasive composites (e.g., shaped bodies) or a combination thereof.
- the abrasive components may be arranged in a pattern or random configuration.
- the fixed abrasive article can be textured such that it includes raised portions and recessed portions.
- the fixed abrasive article can also be three-dimensional such that it includes numerous abrasive particles extending throughout at least a portion of its thickness such that removing some of the abrasive particles during the surface modifying process exposes additional abrasive particles capable of performing the surface modifying function. Examples of useful fixed abrasive articles are described in U.S. Patent Nos. 5,958,794, 5,692,950 and 5,990,012.
- the abrasive article may include any number of different abrasive particles.
- Suitable abrasive particles include, e.g., ceria, silica, alumina, iron oxide, chromia, titania, tin oxide, zirconia, manganese oxide and combinations thereof.
- Other useful abrasive particles include fused aluminum oxide, heat treated aluminum oxide, white fused aluminum oxide, black silicon carbide, green silicon carbide, titanium diboride, boron carbide, silicon nitride, tungsten carbide, titanium carbide, diamond, cubic boron nitride, hexagonal boron nitride, garnet, fused alumina zirconia, alumina-base sol gel derived abrasive particles and combinations thereof.
- the movement of at least one of the abrasive article and the wafer relative to each other to modify a surface of the wafer can be rotational, e.g., in a circular, spiral, elliptical, or non uniform fashion, in a figure eight or a corkscrew, translational, vibrational, oscillatory, or a combination thereof.
- the movement includes rotation of one or both of the fixed abrasive article and the wafer.
- the wafer and the abrasive article can be rotated in a circular fashion and in the same direction.
- the wafer and the fixed abrasive article can be rotated in opposite directions.
- the semiconductor wafer may be in a variety of forms including, e.g., a blank wafer (i.e., a wafer prior to processing, e.g., prior to adding topographical features such as metallized and insulating areas) or a processed wafer (i.e., a wafer that has been subjected to one or more processing steps to add topographical features to the wafer surface).
- the wafer can include a number of materials including, e.g., silicon, silicon dioxide, silicon nitride, gallium arsenide, copper, aluminum, tungsten, titanium, titanium nitride, polymer, and combinations thereof.
- the article to be modified can be a variety of articles and can include materials such as silicon, silicon dioxide, silicon nitride, gallium arsenide, copper, aluminum, tungsten, titanium, titanium nitride, polymers, and combinations thereof.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56097300A | 2000-04-28 | 2000-04-28 | |
US560973 | 2000-04-28 | ||
PCT/US2000/027091 WO2001084613A1 (en) | 2000-04-28 | 2000-10-02 | Method of modifying the surface of a semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1281197A1 true EP1281197A1 (en) | 2003-02-05 |
Family
ID=24240135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00968554A Withdrawn EP1281197A1 (en) | 2000-04-28 | 2000-10-02 | Method of modifying the surface of a semiconductor wafer |
Country Status (9)
Country | Link |
---|---|
EP (1) | EP1281197A1 (pt) |
JP (1) | JP2003533023A (pt) |
KR (1) | KR20020093991A (pt) |
CN (1) | CN1452784A (pt) |
AU (1) | AU2000278447A1 (pt) |
BR (1) | BR0017222A (pt) |
CA (1) | CA2407300A1 (pt) |
HK (1) | HK1054465A1 (pt) |
WO (1) | WO2001084613A1 (pt) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6682575B2 (en) | 2002-03-05 | 2004-01-27 | Cabot Microelectronics Corporation | Methanol-containing silica-based CMP compositions |
KR100623963B1 (ko) * | 2005-01-12 | 2006-09-19 | 제일모직주식회사 | 금속배선 연마용 슬러리 조성물 및 이를 이용한 금속배선연마 방법 |
CN102891077B (zh) * | 2012-09-26 | 2015-12-09 | 复旦大学 | 采用水基原子层沉积技术在石墨烯表面制备高k栅介质的方法 |
JP6358740B2 (ja) * | 2014-04-08 | 2018-07-18 | 山口精研工業株式会社 | 研磨用組成物 |
JP6358739B2 (ja) * | 2014-04-08 | 2018-07-18 | 山口精研工業株式会社 | 研磨用組成物 |
CN104842265A (zh) * | 2015-06-18 | 2015-08-19 | 上海申航热能科技有限公司 | 管内壁抛光用磨头及配方 |
CN106002498B (zh) * | 2016-08-01 | 2018-04-06 | 中国电子科技集团公司第四十六研究所 | 一种有机dast晶体的表面研磨工艺方法 |
CN113881349B (zh) * | 2021-09-01 | 2022-10-21 | 上海工程技术大学 | 用于碳化硅晶片硅表面化学机械抛光的抛光液及抛光方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3735158A1 (de) * | 1987-10-16 | 1989-05-03 | Wacker Chemitronic | Verfahren zum schleierfreien polieren von halbleiterscheiben |
US5614444A (en) * | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
US5972792A (en) * | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
JP2002517593A (ja) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | 金属cmpにおける研磨用組成物および研磨方法 |
-
2000
- 2000-10-02 KR KR1020027014464A patent/KR20020093991A/ko not_active Application Discontinuation
- 2000-10-02 CA CA002407300A patent/CA2407300A1/en not_active Abandoned
- 2000-10-02 WO PCT/US2000/027091 patent/WO2001084613A1/en not_active Application Discontinuation
- 2000-10-02 JP JP2001581336A patent/JP2003533023A/ja active Pending
- 2000-10-02 BR BR0017222-7A patent/BR0017222A/pt not_active Application Discontinuation
- 2000-10-02 CN CN00819480A patent/CN1452784A/zh active Pending
- 2000-10-02 EP EP00968554A patent/EP1281197A1/en not_active Withdrawn
- 2000-10-02 AU AU2000278447A patent/AU2000278447A1/en not_active Abandoned
-
2003
- 2003-07-08 HK HK03104882.0A patent/HK1054465A1/zh unknown
Non-Patent Citations (1)
Title |
---|
See references of WO0184613A1 * |
Also Published As
Publication number | Publication date |
---|---|
BR0017222A (pt) | 2003-01-07 |
JP2003533023A (ja) | 2003-11-05 |
AU2000278447A1 (en) | 2001-11-12 |
HK1054465A1 (zh) | 2003-11-28 |
CA2407300A1 (en) | 2001-11-08 |
CN1452784A (zh) | 2003-10-29 |
WO2001084613A1 (en) | 2001-11-08 |
KR20020093991A (ko) | 2002-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6139763A (en) | Polishing composition and polishing method employing it | |
JP5964795B2 (ja) | 両親媒性非イオン性界面活性剤を利用したcmp法 | |
US6027669A (en) | Polishing composition | |
Kondo et al. | Abrasive‐Free Polishing for Copper Damascene Interconnection | |
US5968280A (en) | Method for cleaning a surface | |
TWI662095B (zh) | 化學機械拋光(cmp)組合物及抑制多晶矽移除速率之方法 | |
US6325705B2 (en) | Chemical-mechanical polishing slurry that reduces wafer defects and polishing system | |
KR101015784B1 (ko) | 구리의 화학 기계적 평탄화용 조성물 및 방법 | |
US20060118760A1 (en) | Slurry composition and methods for chemical mechanical polishing | |
WO1999005706A1 (en) | A polishing composition including an inhibitor of tungsten etching | |
CA2431591A1 (en) | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride | |
TWI508154B (zh) | 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 | |
KR20090038038A (ko) | 금속용 연마액 및 이것을 이용한 연마방법 | |
US7364667B2 (en) | Slurry for CMP and CMP method | |
WO2002011185A2 (en) | Method of polishing a semiconductor wafer | |
WO2001084613A1 (en) | Method of modifying the surface of a semiconductor wafer | |
WO2008079651A1 (en) | Chemical mechanical planarization composition, system, and method of use | |
US6149830A (en) | Composition and method for reducing dishing in patterned metal during CMP process | |
EP1218466B1 (en) | Compositions for and methods of reducing/eliminating scratches and defects in silicon dioxide cmp process | |
CN111944429A (zh) | 化学机械抛光组合物以及方法 | |
KR20110104444A (ko) | 실리콘 옥사이드 및 실리콘 니트라이드중 적어도 하나와 폴리실리콘을 포함하는 기판의 연마 방법 | |
JP2000158329A (ja) | ウェーハエッジ研磨方法 | |
JP4163788B2 (ja) | 研磨用組成物及び研磨加工方法 | |
KR100497409B1 (ko) | 금속배선층 연마용 cmp 슬러리 조성물 | |
Eom et al. | Chemical and mechanical characterizations of the passivation layer of copper in organic acid based slurries and its CMP performance |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20021128 |
|
AK | Designated contracting states |
Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20040324 |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1054465 Country of ref document: HK |