HK1045402A1 - 半導體晶圓邊緣的刻蝕方法 - Google Patents

半導體晶圓邊緣的刻蝕方法

Info

Publication number
HK1045402A1
HK1045402A1 HK02105450.0A HK02105450A HK1045402A1 HK 1045402 A1 HK1045402 A1 HK 1045402A1 HK 02105450 A HK02105450 A HK 02105450A HK 1045402 A1 HK1045402 A1 HK 1045402A1
Authority
HK
Hong Kong
Prior art keywords
etching
semiconductor wafer
wafer edges
edges
semiconductor
Prior art date
Application number
HK02105450.0A
Other languages
English (en)
Inventor
J Kardauskas Michael
P Piwczyk Bernhard
Original Assignee
Rwe Schott Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rwe Schott Solar Inc filed Critical Rwe Schott Solar Inc
Publication of HK1045402A1 publication Critical patent/HK1045402A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
HK02105450.0A 1999-03-03 2002-07-23 半導體晶圓邊緣的刻蝕方法 HK1045402A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/261,616 US6660643B1 (en) 1999-03-03 1999-03-03 Etching of semiconductor wafer edges
PCT/US2000/005334 WO2000052745A1 (en) 1999-03-03 2000-03-01 Etching of semiconductor wafer edges

Publications (1)

Publication Number Publication Date
HK1045402A1 true HK1045402A1 (zh) 2002-11-22

Family

ID=22994093

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02105450.0A HK1045402A1 (zh) 1999-03-03 2002-07-23 半導體晶圓邊緣的刻蝕方法

Country Status (6)

Country Link
US (1) US6660643B1 (zh)
EP (1) EP1173884A1 (zh)
JP (1) JP2003533008A (zh)
AU (1) AU767631B2 (zh)
HK (1) HK1045402A1 (zh)
WO (1) WO2000052745A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030131939A1 (en) * 2002-01-17 2003-07-17 Ase Americas, Inc. Apparatus and method for etching the edges of semiconductor wafers
US6682955B2 (en) * 2002-05-08 2004-01-27 Micron Technology, Inc. Stacked die module and techniques for forming a stacked die module
DE102005040596B4 (de) * 2005-06-17 2009-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Entfernung einer dotierten Oberflächenschicht an Rückseiten von kristallinen Silizium-Solarwafern
CN1978351A (zh) * 2005-12-02 2007-06-13 鸿富锦精密工业（深圳）有限公司 一种模仁保护膜的去除装置及方法
US20070188717A1 (en) * 2006-02-14 2007-08-16 Melcher Charles L Method for producing crystal elements having strategically oriented faces for enhancing performance
US7910484B2 (en) * 2008-01-11 2011-03-22 International Business Machines Corporation Method for preventing backside defects in dielectric layers formed on semiconductor substrates
US9126290B2 (en) * 2009-06-24 2015-09-08 David Buttress Method for joining solar receiver tubes
US8841573B2 (en) * 2009-08-30 2014-09-23 David Buttress Apparatus for field welding solar receiver tubes
TWI497741B (zh) * 2009-09-22 2015-08-21 First Solar Inc 用以自基板之邊緣移除塗層之系統及方法
WO2011037921A1 (en) * 2009-09-22 2011-03-31 First Solar, Inc. System and method for tracking and removing coating from an edge of a substrate
US20120129318A1 (en) * 2010-11-24 2012-05-24 Semiconductor Energy Laboratory Co., Ltd. Atmospheric pressure plasma etching apparatus and method for manufacturing soi substrate
US8960657B2 (en) 2011-10-05 2015-02-24 Sunedison, Inc. Systems and methods for connecting an ingot to a wire saw
JP2016004916A (ja) * 2014-06-17 2016-01-12 三菱電機株式会社 太陽電池の製造方法および太陽電池
EP3038169A1 (en) * 2014-12-22 2016-06-29 Solvay SA Process for the manufacture of solar cells
JP6771427B2 (ja) * 2017-05-19 2020-10-21 三菱電機株式会社 ｐｎ分離方法および太陽電池セルの製造方法
WO2018225661A1 (ja) 2017-06-08 2018-12-13 昭和電工株式会社 エッチング方法
JP7310608B2 (ja) * 2017-11-02 2023-07-19 株式会社レゾナック エッチング方法及び半導体の製造方法
TWI695440B (zh) 2019-02-13 2020-06-01 謝德風 旋動式模組化檢測設備

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795557A (en) 1972-05-12 1974-03-05 Lfe Corp Process and material for manufacturing semiconductor devices
US4141811A (en) * 1978-04-24 1979-02-27 Atlantic Richfield Company Plasma etching process for the manufacture of solar cells
US4158591A (en) * 1978-04-24 1979-06-19 Atlantic Richfield Company Solar cell manufacture
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
AU570309B2 (en) * 1984-03-26 1988-03-10 Unisearch Limited Buried contact solar cell
US4969416A (en) * 1986-07-03 1990-11-13 Emcore, Inc. Gas treatment apparatus and method
US5156978A (en) * 1988-11-15 1992-10-20 Mobil Solar Energy Corporation Method of fabricating solar cells
GB2271044B (en) 1990-12-26 1995-06-21 Opa Apparatus for plasma-arc machining
GB2271124B (en) 1990-12-26 1995-09-27 Opa Method and apparatus for plasma treatment of a material
JP3210359B2 (ja) * 1991-05-29 2001-09-17 株式会社東芝 ドライエッチング方法
EP0529888A1 (en) * 1991-08-22 1993-03-03 AT&T Corp. Removal of substrate perimeter material
US5877032A (en) * 1995-10-12 1999-03-02 Lucent Technologies Inc. Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
AUPM483494A0 (en) * 1994-03-31 1994-04-28 Pacific Solar Pty Limited Multiple layer thin film solar cells
US5827437A (en) * 1996-05-17 1998-10-27 Lam Research Corporation Multi-step metallization etch
DE69702452T2 (de) * 1996-05-31 2000-11-23 Ipec Prec Inc Verfahren zum behandeln eines scheibens mit einem plasmastrahl
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
US5767627A (en) * 1997-01-09 1998-06-16 Trusi Technologies, Llc Plasma generation and plasma processing of materials
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
US6139678A (en) * 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus

Also Published As

Publication number Publication date
EP1173884A1 (en) 2002-01-23
WO2000052745A1 (en) 2000-09-08
AU767631B2 (en) 2003-11-20
JP2003533008A (ja) 2003-11-05
AU4169300A (en) 2000-09-21
US6660643B1 (en) 2003-12-09

Similar Documents

Publication Publication Date Title
EP1242198A4 (en) DEVICE FOR TREATING A SINGLE SEMICONDUCTOR WAFER
GB2334374B (en) Process for wet etching of semiconductor wafers
AU2001294817A1 (en) Fabrication of semiconductor devices
SG106591A1 (en) Semiconductor wafer dividing method
GB0024398D0 (en) Methods of manufacturing semiconductor devices
GB2336034B (en) Semiconductor wafer fabrication of die-bottom contacts for electronic devices
AU5324600A (en) Semiconductor wafer carrier
HK1045402A1 (zh) 半導體晶圓邊緣的刻蝕方法
GB2362508B (en) Semiconductor integrated circuit fabrication
AU2679999A (en) Semiconductor wafer processing tapes
SG74757A1 (en) Method of manufacturing semiconductor wafer method of using and utilizing the same
GB2337636B (en) Semiconductor wafer fabrication of inside-wrapped contacts for electronic devices
SG117412A1 (en) Semiconductor wafer dividing method
SG100686A1 (en) Semiconductor wafer dividing method
SG85171A1 (en) Method of manufacturing semiconductor device
WO2002003432A3 (en) PROCESS FOR ETCHING SILICON WAFERS
EP1132950A4 (en) SEMICONDUCTOR MANUFACTURING SYSTEM PLATE HOLDER
AU2224400A (en) Semiconductor fabrication processes
EP1231301A4 (en) EPITAXIAL SILICON PLATEBOARD
SG87844A1 (en) Semiconductor wafer carrier
SG67503A1 (en) Process for etching semiconductor wafers
EP1437762A4 (en) SEMICONDUCTOR WAFER COMPOSED IN NOTCH
SG93259A1 (en) Method of manufacturing epitaxial silicon wafer
AU7381200A (en) Semiconductor wafer level package
EP1168423A4 (en) RESIN SOLUTION, METHOD AND SEMICONDUCTOR SURFACE