AU2001255693A1 - Improved structure for a semiconductor device - Google Patents

Improved structure for a semiconductor device

Info

Publication number
AU2001255693A1
AU2001255693A1 AU2001255693A AU5569301A AU2001255693A1 AU 2001255693 A1 AU2001255693 A1 AU 2001255693A1 AU 2001255693 A AU2001255693 A AU 2001255693A AU 5569301 A AU5569301 A AU 5569301A AU 2001255693 A1 AU2001255693 A1 AU 2001255693A1
Authority
AU
Australia
Prior art keywords
semiconductor device
improved structure
improved
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001255693A
Inventor
En Jun Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001255693A1 publication Critical patent/AU2001255693A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
AU2001255693A 2000-04-27 2001-04-26 Improved structure for a semiconductor device Abandoned AU2001255693A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20013800P 2000-04-27 2000-04-27
US60200138 2000-04-27
PCT/US2001/013415 WO2001084631A1 (en) 2000-04-27 2001-04-26 Improved structure for a semiconductor device

Publications (1)

Publication Number Publication Date
AU2001255693A1 true AU2001255693A1 (en) 2001-11-12

Family

ID=22740483

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001255693A Abandoned AU2001255693A1 (en) 2000-04-27 2001-04-26 Improved structure for a semiconductor device

Country Status (3)

Country Link
US (1) US6559517B2 (en)
AU (1) AU2001255693A1 (en)
WO (1) WO2001084631A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222938A (en) * 2001-01-25 2002-08-09 Rohm Co Ltd Semiconductor device
US7064416B2 (en) * 2001-11-16 2006-06-20 International Business Machines Corporation Semiconductor device and method having multiple subcollectors formed on a common wafer
WO2005091988A2 (en) * 2004-03-19 2005-10-06 Fairchild Semiconductor Corporation Method and device with durable contact on silicon carbide
US7285469B2 (en) 2005-09-02 2007-10-23 Intersil Americas Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns
SE535380C2 (en) * 2011-01-31 2012-07-17 Fairchild Semiconductor Silicon carbide bipolar transistor with overgrown emitter
CN104508975B (en) 2012-06-14 2018-02-16 天工方案公司 The HBT bias circuit of power amplifier and method of technological compensa tion
KR101983959B1 (en) 2012-06-14 2019-05-29 스카이워크스 솔루션즈, 인코포레이티드 Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods
JP2018101652A (en) * 2016-12-19 2018-06-28 株式会社村田製作所 Bipolar transistor and method for manufacturing the same
TWI726155B (en) * 2017-09-14 2021-05-01 聯華電子股份有限公司 Bipolar junction transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4871684A (en) * 1987-10-29 1989-10-03 International Business Machines Corporation Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors
US5101256A (en) 1989-02-13 1992-03-31 International Business Machines Corporation Bipolar transistor with ultra-thin epitaxial base and method of fabricating same
US5289024A (en) * 1990-08-07 1994-02-22 National Semiconductor Corporation Bipolar transistor with diffusion compensation
US5603765A (en) 1993-12-01 1997-02-18 Hughes Aircraft Company Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy
US5583059A (en) * 1994-06-01 1996-12-10 International Business Machines Corporation Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
US5981985A (en) 1996-06-24 1999-11-09 The Trustees Of Columbia University In The City Of New York Heterojunction bipolar transistor with buried selective sub-collector layer, and methods of manufacture
SE511891C2 (en) 1997-08-29 1999-12-13 Ericsson Telefon Ab L M Bipolar power transistor and manufacturing method
US6271577B1 (en) * 1997-12-17 2001-08-07 Texas Instruments Incorporated Transistor and method
US20010013636A1 (en) * 1999-01-22 2001-08-16 James S. Dunn A self-aligned, sub-minimum isolation ring
US6180478B1 (en) 1999-04-19 2001-01-30 Industrial Technology Research Institute Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance
US6218254B1 (en) 1999-09-22 2001-04-17 Cree Research, Inc. Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices
US6291304B1 (en) * 1999-09-15 2001-09-18 Taiwan Semiconductor Manufacturing Company Method of fabricating a high voltage transistor using P+ buried layer
US6245609B1 (en) * 1999-09-27 2001-06-12 Taiwan Semiconductor Manufacturing Company High voltage transistor using P+ buried layer

Also Published As

Publication number Publication date
WO2001084631A1 (en) 2001-11-08
US20020000640A1 (en) 2002-01-03
US6559517B2 (en) 2003-05-06

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