AU2001253714A1 - Semiconductor device using a barrier layer - Google Patents

Semiconductor device using a barrier layer

Info

Publication number
AU2001253714A1
AU2001253714A1 AU2001253714A AU5371401A AU2001253714A1 AU 2001253714 A1 AU2001253714 A1 AU 2001253714A1 AU 2001253714 A AU2001253714 A AU 2001253714A AU 5371401 A AU5371401 A AU 5371401A AU 2001253714 A1 AU2001253714 A1 AU 2001253714A1
Authority
AU
Australia
Prior art keywords
semiconductor device
barrier layer
barrier
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001253714A
Inventor
Nyles W. Cody
Julio Costa
Marino J. Martinez
Ernest Schirmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001253714A1 publication Critical patent/AU2001253714A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
AU2001253714A 2000-04-28 2001-04-20 Semiconductor device using a barrier layer Abandoned AU2001253714A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09560737 2000-04-28
US09/560,737 US6521961B1 (en) 2000-04-28 2000-04-28 Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
PCT/US2001/012824 WO2001084616A2 (en) 2000-04-28 2001-04-20 Semiconductor device using a barrier layer

Publications (1)

Publication Number Publication Date
AU2001253714A1 true AU2001253714A1 (en) 2001-11-12

Family

ID=24239146

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001253714A Abandoned AU2001253714A1 (en) 2000-04-28 2001-04-20 Semiconductor device using a barrier layer

Country Status (7)

Country Link
US (1) US6521961B1 (en)
EP (1) EP1279192A2 (en)
JP (1) JP2003533024A (en)
KR (1) KR100761232B1 (en)
AU (1) AU2001253714A1 (en)
TW (1) TW525234B (en)
WO (1) WO2001084616A2 (en)

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US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US20080001173A1 (en) * 2006-06-23 2008-01-03 International Business Machines Corporation BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICS
TW200830550A (en) * 2006-08-18 2008-07-16 Univ California High breakdown enhancement mode gallium nitride based high electron mobility transistors with integrated slant field plate
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US8338273B2 (en) * 2006-12-15 2012-12-25 University Of South Carolina Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
US8476125B2 (en) * 2006-12-15 2013-07-02 University Of South Carolina Fabrication technique for high frequency, high power group III nitride electronic devices
JP5114947B2 (en) * 2006-12-28 2013-01-09 富士通株式会社 Nitride semiconductor device and manufacturing method thereof
US20090321787A1 (en) * 2007-03-20 2009-12-31 Velox Semiconductor Corporation High voltage GaN-based heterojunction transistor structure and method of forming same
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
US8502272B2 (en) * 2007-05-16 2013-08-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication
JP2010118556A (en) * 2008-11-13 2010-05-27 Furukawa Electric Co Ltd:The Semiconductor device and its manufacturing method
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US9412836B2 (en) * 2014-03-06 2016-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Contacts for transistors
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US10062776B2 (en) 2016-02-05 2018-08-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
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Also Published As

Publication number Publication date
TW525234B (en) 2003-03-21
WO2001084616A2 (en) 2001-11-08
US6521961B1 (en) 2003-02-18
KR100761232B1 (en) 2007-09-28
EP1279192A2 (en) 2003-01-29
WO2001084616A3 (en) 2002-02-21
KR20030043789A (en) 2003-06-02
JP2003533024A (en) 2003-11-05

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