ATE381778T1 - Verfahren zum erreichen eines dotierungsniveaus im polysilizium für flash-speicherbauelemente - Google Patents
Verfahren zum erreichen eines dotierungsniveaus im polysilizium für flash-speicherbauelementeInfo
- Publication number
- ATE381778T1 ATE381778T1 AT00948725T AT00948725T ATE381778T1 AT E381778 T1 ATE381778 T1 AT E381778T1 AT 00948725 T AT00948725 T AT 00948725T AT 00948725 T AT00948725 T AT 00948725T AT E381778 T1 ATE381778 T1 AT E381778T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- select transistor
- flash memory
- memory cell
- amorphous silicon
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
- 229920005591 polysilicon Polymers 0.000 title abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 4
- 239000002019 doping agent Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/369,638 US6218689B1 (en) | 1999-08-06 | 1999-08-06 | Method for providing a dopant level for polysilicon for flash memory devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE381778T1 true ATE381778T1 (de) | 2008-01-15 |
Family
ID=23456276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00948725T ATE381778T1 (de) | 1999-08-06 | 2000-07-14 | Verfahren zum erreichen eines dotierungsniveaus im polysilizium für flash-speicherbauelemente |
Country Status (9)
Country | Link |
---|---|
US (1) | US6218689B1 (de) |
EP (1) | EP1218938B1 (de) |
JP (1) | JP5178979B2 (de) |
KR (1) | KR100697353B1 (de) |
CN (1) | CN1178291C (de) |
AT (1) | ATE381778T1 (de) |
DE (1) | DE60037528T2 (de) |
TW (1) | TW457709B (de) |
WO (1) | WO2001011683A1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6362049B1 (en) * | 1998-12-04 | 2002-03-26 | Advanced Micro Devices, Inc. | High yield performance semiconductor process flow for NAND flash memory products |
KR100339683B1 (ko) * | 2000-02-03 | 2002-06-05 | 윤종용 | 반도체 집적회로의 자기정렬 콘택 구조체 형성방법 |
US6462372B1 (en) | 2001-10-09 | 2002-10-08 | Silicon-Based Technology Corp. | Scaled stack-gate flash memory device |
KR100487560B1 (ko) * | 2003-03-10 | 2005-05-03 | 삼성전자주식회사 | 선택 트랜지스터를 갖는 이이피롬 및 그 제조방법 |
US6995060B2 (en) * | 2003-03-19 | 2006-02-07 | Promos Technologies Inc. | Fabrication of integrated circuit elements in structures with protruding features |
US6962852B2 (en) * | 2003-03-19 | 2005-11-08 | Promos Technologies Inc. | Nonvolatile memories and methods of fabrication |
US6962851B2 (en) * | 2003-03-19 | 2005-11-08 | Promos Technologies, Inc. | Nonvolatile memories and methods of fabrication |
US6974739B2 (en) * | 2003-05-16 | 2005-12-13 | Promos Technologies Inc. | Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit |
US6902974B2 (en) * | 2003-05-16 | 2005-06-07 | Promos Technologies Inc. | Fabrication of conductive gates for nonvolatile memories from layers with protruding portions |
US7214585B2 (en) | 2003-05-16 | 2007-05-08 | Promos Technologies Inc. | Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges |
US7169667B2 (en) * | 2003-07-30 | 2007-01-30 | Promos Technologies Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate |
US6951782B2 (en) * | 2003-07-30 | 2005-10-04 | Promos Technologies, Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions |
US6885044B2 (en) * | 2003-07-30 | 2005-04-26 | Promos Technologies, Inc. | Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates |
US7060565B2 (en) * | 2003-07-30 | 2006-06-13 | Promos Technologies Inc. | Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates |
US7052947B2 (en) * | 2003-07-30 | 2006-05-30 | Promos Technologies Inc. | Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates |
US7101757B2 (en) * | 2003-07-30 | 2006-09-05 | Promos Technologies, Inc. | Nonvolatile memory cells with buried channel transistors |
KR100665396B1 (ko) * | 2004-01-09 | 2007-01-04 | 에스티마이크로일렉트로닉스 엔.브이. | 플래쉬 메모리 소자의 제조 방법 |
KR100538884B1 (ko) * | 2004-03-30 | 2005-12-23 | 주식회사 하이닉스반도체 | 플래쉬 메모리소자의 제조방법 |
JP4907897B2 (ja) * | 2005-04-15 | 2012-04-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100766229B1 (ko) * | 2005-05-30 | 2007-10-10 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조 방법 |
KR100680455B1 (ko) * | 2005-06-30 | 2007-02-08 | 주식회사 하이닉스반도체 | Nand형 플래쉬 메모리 소자, 그 제조 방법 및 그 구동방법 |
TWI267200B (en) * | 2006-01-09 | 2006-11-21 | Powerchip Semiconductor Corp | Non-volatile memory structure and fabricating method thereof |
KR100735470B1 (ko) * | 2006-05-19 | 2007-07-03 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
US7782651B2 (en) | 2006-10-24 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including storage device and method for driving the same |
KR100898678B1 (ko) * | 2006-10-31 | 2009-05-22 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US9741734B2 (en) * | 2015-12-15 | 2017-08-22 | Intel Corporation | Memory devices and systems having reduced bit line to drain select gate shorting and associated methods |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60189971A (ja) * | 1984-03-09 | 1985-09-27 | Toshiba Corp | 半導体装置の製造方法 |
US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5677867A (en) | 1991-06-12 | 1997-10-14 | Hazani; Emanuel | Memory with isolatable expandable bit lines |
JPH04217373A (ja) | 1990-12-18 | 1992-08-07 | Sharp Corp | 不揮発性記憶装置およびその製造方法 |
EP0612108B1 (de) | 1993-02-19 | 2001-07-04 | STMicroelectronics S.r.l. | EEPROM-Zelle mit doppelter Polysiliziumschicht und ihr Herstellungsverfahren |
JPH0799248A (ja) * | 1993-06-11 | 1995-04-11 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3256375B2 (ja) * | 1993-07-05 | 2002-02-12 | シャープ株式会社 | 不揮発性メモリセルの製造方法 |
US5511020A (en) | 1993-11-23 | 1996-04-23 | Monolithic System Technology, Inc. | Pseudo-nonvolatile memory incorporating data refresh operation |
JP3450467B2 (ja) | 1993-12-27 | 2003-09-22 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JPH08306889A (ja) * | 1995-05-08 | 1996-11-22 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2885134B2 (ja) * | 1995-06-15 | 1999-04-19 | 日本電気株式会社 | 半導体メモリ装置の製造方法 |
JPH0964209A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH1084053A (ja) * | 1996-09-09 | 1998-03-31 | Matsushita Electron Corp | 半導体記憶装置の製造方法 |
JP3442596B2 (ja) * | 1996-11-28 | 2003-09-02 | 富士通株式会社 | 半導体装置の製造方法 |
JPH1167941A (ja) * | 1997-08-26 | 1999-03-09 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
KR100407084B1 (ko) * | 1997-10-06 | 2003-11-28 | 세이코 엡슨 가부시키가이샤 | 불휘발성 반도체 기억 장치 및 그 제조 방법 |
JPH11176957A (ja) * | 1997-12-05 | 1999-07-02 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
US6023085A (en) * | 1997-12-18 | 2000-02-08 | Advanced Micro Devices, Inc. | Core cell structure and corresponding process for NAND-type high performance flash memory device |
-
1999
- 1999-08-06 US US09/369,638 patent/US6218689B1/en not_active Expired - Lifetime
-
2000
- 2000-07-14 DE DE60037528T patent/DE60037528T2/de not_active Expired - Lifetime
- 2000-07-14 CN CNB00811367XA patent/CN1178291C/zh not_active Expired - Fee Related
- 2000-07-14 KR KR1020027001395A patent/KR100697353B1/ko not_active IP Right Cessation
- 2000-07-14 AT AT00948725T patent/ATE381778T1/de not_active IP Right Cessation
- 2000-07-14 WO PCT/US2000/019486 patent/WO2001011683A1/en active IP Right Grant
- 2000-07-14 JP JP2001516243A patent/JP5178979B2/ja not_active Expired - Fee Related
- 2000-07-14 EP EP00948725A patent/EP1218938B1/de not_active Expired - Lifetime
- 2000-08-05 TW TW089115772A patent/TW457709B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2003506901A (ja) | 2003-02-18 |
US6218689B1 (en) | 2001-04-17 |
DE60037528D1 (de) | 2008-01-31 |
KR100697353B1 (ko) | 2007-03-20 |
DE60037528T2 (de) | 2008-12-24 |
EP1218938B1 (de) | 2007-12-19 |
WO2001011683A1 (en) | 2001-02-15 |
CN1178291C (zh) | 2004-12-01 |
TW457709B (en) | 2001-10-01 |
CN1369113A (zh) | 2002-09-11 |
KR20020020951A (ko) | 2002-03-16 |
JP5178979B2 (ja) | 2013-04-10 |
EP1218938A1 (de) | 2002-07-03 |
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Legal Events
Date | Code | Title | Description |
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |