ATE368929T1 - Elektrodenmaterial für einen kondensator und kondensatorelektrode - Google Patents

Elektrodenmaterial für einen kondensator und kondensatorelektrode

Info

Publication number
ATE368929T1
ATE368929T1 AT00935623T AT00935623T ATE368929T1 AT E368929 T1 ATE368929 T1 AT E368929T1 AT 00935623 T AT00935623 T AT 00935623T AT 00935623 T AT00935623 T AT 00935623T AT E368929 T1 ATE368929 T1 AT E368929T1
Authority
AT
Austria
Prior art keywords
acid compound
metal
capacitor
tantalic
electrode
Prior art date
Application number
AT00935623T
Other languages
English (en)
Inventor
Nobuyuki Nagato
Kazumi Naito
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15747754&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE368929(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE368929T1 publication Critical patent/ATE368929T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/26—Anodisation of refractory metals or alloys based thereon
AT00935623T 1999-06-09 2000-06-09 Elektrodenmaterial für einen kondensator und kondensatorelektrode ATE368929T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16208299 1999-06-09

Publications (1)

Publication Number Publication Date
ATE368929T1 true ATE368929T1 (de) 2007-08-15

Family

ID=15747754

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00935623T ATE368929T1 (de) 1999-06-09 2000-06-09 Elektrodenmaterial für einen kondensator und kondensatorelektrode

Country Status (9)

Country Link
US (1) US6430026B1 (de)
EP (1) EP1202301B2 (de)
JP (2) JP4723139B2 (de)
KR (1) KR100572181B1 (de)
AT (1) ATE368929T1 (de)
AU (1) AU5108300A (de)
DE (1) DE60035785T3 (de)
TW (1) TW479262B (de)
WO (1) WO2000075943A1 (de)

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TW479262B (en) 1999-06-09 2002-03-11 Showa Denko Kk Electrode material for capacitor and capacitor using the same
KR100759290B1 (ko) † 2000-08-10 2007-09-17 쇼와 덴코 가부시키가이샤 니오브합금분, 그 소결체 및 그것을 사용한 콘덴서
US6652619B2 (en) * 2000-08-10 2003-11-25 Showa Denko K.K. Niobium powder, sintered body thereof, and capacitor using the same
JP4683512B2 (ja) * 2000-11-30 2011-05-18 昭和電工株式会社 コンデンサ用粉体、それを用いた焼結体及びそれを用いたコンデンサ
KR101257278B1 (ko) * 2001-12-10 2013-04-23 쇼와 덴코 가부시키가이샤 콘덴서용 전극
KR100434215B1 (ko) * 2001-12-27 2004-06-04 파츠닉(주) 니오븀 전해 캐패시터의 제조 방법
JP2004143477A (ja) * 2002-10-22 2004-05-20 Cabot Supermetal Kk ニオブ粉末およびその製造方法、並びにそれを用いた固体電解コンデンサ
KR101052215B1 (ko) * 2003-03-03 2011-07-29 쇼와 덴코 가부시키가이샤 칩상 고체 전해 콘덴서
WO2004079760A1 (en) * 2003-03-03 2004-09-16 Showa Denko K.K. Chip solid electrolyte capacitor
TW200518137A (en) * 2003-08-13 2005-06-01 Showa Denko Kk Chip solid electrolyte capacitor and production method of the same
US20050136292A1 (en) * 2003-08-14 2005-06-23 Mariani Robert D. Thin film dielectrics with perovskite structure and preparation thereof
TW200522109A (en) 2003-11-13 2005-07-01 Showa Denko Kk Solid electrolyte capacitor
US7803235B2 (en) * 2004-01-08 2010-09-28 Cabot Corporation Passivation of tantalum and other metal powders using oxygen
US20060260437A1 (en) * 2004-10-06 2006-11-23 Showa Denko K.K. Niobium powder, niobium granulated powder, niobium sintered body, capacitor and production method thereof
EP1901319B1 (de) * 2005-06-30 2019-06-19 Showa Denko K.K. Verfahren zur herstellung eines festelektrolyt-kondensatorbauelements
US20090224232A1 (en) * 2005-06-30 2009-09-10 Kazumi Naito Solid electrolytic capacitor and production method
WO2007004555A1 (ja) * 2005-06-30 2007-01-11 Showa Denko K. K. 固体電解コンデンサ素子及びその製造方法
JP5099831B2 (ja) * 2005-06-30 2012-12-19 昭和電工株式会社 固体電解コンデンサの製造方法
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
RU2454474C1 (ru) * 2011-02-25 2012-06-27 Федеральное государственное бюджетное учреждение науки Институт физики прочности и материаловедения Сибирского отделения Российской академии наук (ИФПМ СО РАН) Шихта для композиционного катода и способ его изготовления
JP6010772B2 (ja) * 2011-03-15 2016-10-19 パナソニックＩｐマネジメント株式会社 固体電解コンデンサの製造方法
JP2015147954A (ja) * 2014-02-05 2015-08-20 国立大学法人 新潟大学 メソポーラス酸化ニオブの製造方法、及び製造装置
US10832871B2 (en) * 2016-11-14 2020-11-10 Avx Corporation Wet electrolytic capacitor for an implantable medical device
CN107268020B (zh) * 2017-06-06 2019-06-04 中国矿业大学 一种Ta3N5薄膜的制备方法及Ta3N5薄膜的应用
US10957493B2 (en) 2017-12-05 2021-03-23 Avx Corporation Wet electrolytic capacitor for an implantable medical device
CN113077987B (zh) * 2020-01-03 2022-07-22 深圳先进电子材料国际创新研究院 一种片式钽电解电容器及其制备方法

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KR100251762B1 (ko) * 1997-11-14 2000-04-15 권호택 탄탈륨 고체 전해 콘덴서의 제조방법
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JP3196832B2 (ja) * 1998-05-15 2001-08-06 日本電気株式会社 固体電解コンデンサ及びその製造方法
JP3486113B2 (ja) * 1998-08-19 2004-01-13 Ｎｅｃトーキン株式会社 Ｔａ固体電解コンデンサの製造方法
TW479262B (en) 1999-06-09 2002-03-11 Showa Denko Kk Electrode material for capacitor and capacitor using the same
US6262877B1 (en) * 1999-11-23 2001-07-17 Intel Corporation Low inductance high capacitance capacitor and method of making same

Also Published As

Publication number Publication date
US6430026B1 (en) 2002-08-06
EP1202301B1 (de) 2007-08-01
DE60035785T3 (de) 2012-01-19
EP1202301B2 (de) 2011-10-12
EP1202301A4 (de) 2005-08-17
KR20020010698A (ko) 2002-02-04
AU5108300A (en) 2000-12-28
TW479262B (en) 2002-03-11
JP4723683B2 (ja) 2011-07-13
DE60035785D1 (de) 2007-09-13
DE60035785T2 (de) 2008-04-30
KR100572181B1 (ko) 2006-04-18
WO2000075943A1 (fr) 2000-12-14
JP2010183091A (ja) 2010-08-19
EP1202301A1 (de) 2002-05-02
JP4723139B2 (ja) 2011-07-13

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