ATE285121T1 - Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen - Google Patents

Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen

Info

Publication number
ATE285121T1
ATE285121T1 AT97916177T AT97916177T ATE285121T1 AT E285121 T1 ATE285121 T1 AT E285121T1 AT 97916177 T AT97916177 T AT 97916177T AT 97916177 T AT97916177 T AT 97916177T AT E285121 T1 ATE285121 T1 AT E285121T1
Authority
AT
Austria
Prior art keywords
contact opening
node location
contact
electrically conductive
etching
Prior art date
Application number
AT97916177T
Other languages
English (en)
Inventor
Charles H Dennison
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE285121T1 publication Critical patent/ATE285121T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
AT97916177T 1996-03-26 1997-03-21 Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen ATE285121T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/622,591 US6083831A (en) 1996-03-26 1996-03-26 Semiconductor processing method of forming a contact pedestal, of forming a storage node of a capacitor
PCT/US1997/004660 WO1997036327A1 (en) 1996-03-26 1997-03-21 A semiconductor processing method for forming a contact pedestal for a storage node of a capacitor in integrated circuitry

Publications (1)

Publication Number Publication Date
ATE285121T1 true ATE285121T1 (de) 2005-01-15

Family

ID=24494762

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97916177T ATE285121T1 (de) 1996-03-26 1997-03-21 Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen

Country Status (8)

Country Link
US (5) US6083831A (de)
EP (1) EP0891634B1 (de)
JP (2) JP2000507741A (de)
KR (1) KR100424220B1 (de)
AT (1) ATE285121T1 (de)
AU (1) AU2342297A (de)
DE (1) DE69731945T2 (de)
WO (1) WO1997036327A1 (de)

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Also Published As

Publication number Publication date
JP2000507741A (ja) 2000-06-20
EP0891634B1 (de) 2004-12-15
US6498375B2 (en) 2002-12-24
WO1997036327A1 (en) 1997-10-02
US6300213B1 (en) 2001-10-09
JP2005101666A (ja) 2005-04-14
JP4585309B2 (ja) 2010-11-24
US6312984B1 (en) 2001-11-06
DE69731945T2 (de) 2005-12-22
US6083831A (en) 2000-07-04
US6331725B1 (en) 2001-12-18
EP0891634A1 (de) 1999-01-20
KR19990082204A (ko) 1999-11-25
KR100424220B1 (ko) 2004-11-10
AU2342297A (en) 1997-10-17
EP0891634A4 (de) 1999-12-01
US20020020883A1 (en) 2002-02-21
DE69731945D1 (de) 2005-01-20

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