ATE285121T1 - Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen - Google Patents

Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen

Info

Publication number
ATE285121T1
ATE285121T1 AT97916177T AT97916177T ATE285121T1 AT E285121 T1 ATE285121 T1 AT E285121T1 AT 97916177 T AT97916177 T AT 97916177T AT 97916177 T AT97916177 T AT 97916177T AT E285121 T1 ATE285121 T1 AT E285121T1
Authority
AT
Austria
Prior art keywords
contact opening
node location
contact
electrically conductive
etching
Prior art date
Application number
AT97916177T
Other languages
English (en)
Inventor
Charles H Dennison
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE285121T1 publication Critical patent/ATE285121T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
AT97916177T 1996-03-26 1997-03-21 Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen ATE285121T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/622,591 US6083831A (en) 1996-03-26 1996-03-26 Semiconductor processing method of forming a contact pedestal, of forming a storage node of a capacitor
PCT/US1997/004660 WO1997036327A1 (en) 1996-03-26 1997-03-21 A semiconductor processing method for forming a contact pedestal for a storage node of a capacitor in integrated circuitry

Publications (1)

Publication Number Publication Date
ATE285121T1 true ATE285121T1 (de) 2005-01-15

Family

ID=24494762

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97916177T ATE285121T1 (de) 1996-03-26 1997-03-21 Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen

Country Status (8)

Country Link
US (5) US6083831A (de)
EP (1) EP0891634B1 (de)
JP (2) JP2000507741A (de)
KR (1) KR100424220B1 (de)
AT (1) ATE285121T1 (de)
AU (1) AU2342297A (de)
DE (1) DE69731945T2 (de)
WO (1) WO1997036327A1 (de)

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Also Published As

Publication number Publication date
US20020020883A1 (en) 2002-02-21
JP2005101666A (ja) 2005-04-14
US6300213B1 (en) 2001-10-09
JP2000507741A (ja) 2000-06-20
WO1997036327A1 (en) 1997-10-02
DE69731945D1 (de) 2005-01-20
US6331725B1 (en) 2001-12-18
KR100424220B1 (ko) 2004-11-10
EP0891634B1 (de) 2004-12-15
US6083831A (en) 2000-07-04
EP0891634A1 (de) 1999-01-20
US6312984B1 (en) 2001-11-06
US6498375B2 (en) 2002-12-24
AU2342297A (en) 1997-10-17
KR19990082204A (ko) 1999-11-25
DE69731945T2 (de) 2005-12-22
JP4585309B2 (ja) 2010-11-24
EP0891634A4 (de) 1999-12-01

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