ATE276969T1 - Verfahren zur herstellung von polykristallinem silizium - Google Patents

Verfahren zur herstellung von polykristallinem silizium

Info

Publication number
ATE276969T1
ATE276969T1 AT02737219T AT02737219T ATE276969T1 AT E276969 T1 ATE276969 T1 AT E276969T1 AT 02737219 T AT02737219 T AT 02737219T AT 02737219 T AT02737219 T AT 02737219T AT E276969 T1 ATE276969 T1 AT E276969T1
Authority
AT
Austria
Prior art keywords
polycrystalline silicon
producing polycrystalline
tetrachlorosilane
hydrogen
disilane
Prior art date
Application number
AT02737219T
Other languages
German (de)
English (en)
Inventor
James Edward Kendig
David Russell Landis
Todd Michael Mcquiston
Michael Matthew Zalar
Original Assignee
Hemlock Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hemlock Semiconductor Corp filed Critical Hemlock Semiconductor Corp
Application granted granted Critical
Publication of ATE276969T1 publication Critical patent/ATE276969T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
AT02737219T 2001-06-08 2002-05-23 Verfahren zur herstellung von polykristallinem silizium ATE276969T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/877,674 US20020187096A1 (en) 2001-06-08 2001-06-08 Process for preparation of polycrystalline silicon
PCT/US2002/016754 WO2002100776A1 (en) 2001-06-08 2002-05-23 Process for preparation of polycrystalline silicon

Publications (1)

Publication Number Publication Date
ATE276969T1 true ATE276969T1 (de) 2004-10-15

Family

ID=25370477

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02737219T ATE276969T1 (de) 2001-06-08 2002-05-23 Verfahren zur herstellung von polykristallinem silizium

Country Status (6)

Country Link
US (1) US20020187096A1 (enExample)
EP (1) EP1392601B1 (enExample)
JP (2) JP4532105B2 (enExample)
AT (1) ATE276969T1 (enExample)
DE (1) DE60201354T2 (enExample)
WO (1) WO2002100776A1 (enExample)

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WO2002012122A1 (en) * 2000-08-02 2002-02-14 Mitsubishi Materials Polycrystalline Silicon Corporation Process for producing disilicon hexachloride
DE102006009954A1 (de) * 2006-03-03 2007-09-06 Wacker Chemie Ag Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes
DE102006009953A1 (de) * 2006-03-03 2007-09-06 Wacker Chemie Ag Verfahren zur Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes
JP4937998B2 (ja) * 2006-03-07 2012-05-23 カンケンテクノ株式会社 Ｈｃｄガスの除害方法とその装置
WO2007120871A2 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
DE102006034061A1 (de) * 2006-07-20 2008-01-24 REV Renewable Energy Ventures, Inc., Aloha Polysilanverarbeitung und Verwendung
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process
DE102006043929B4 (de) * 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
DE102006050329B3 (de) * 2006-10-25 2007-12-13 Wacker Chemie Ag Verfahren zur Herstellung von Trichlorsilan
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
CN101372336B (zh) * 2007-08-20 2011-04-13 中国恩菲工程技术有限公司 一种多晶硅生产方法
DE102007041803A1 (de) 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
JP4714197B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
JP4659797B2 (ja) 2007-09-05 2011-03-30 信越化学工業株式会社 多結晶シリコンの製造方法
JP4659798B2 (ja) 2007-09-05 2011-03-30 信越化学工業株式会社 トリクロロシランの製造方法
JP4714196B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
DE102008000052A1 (de) 2008-01-14 2009-07-16 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
KR101573933B1 (ko) * 2008-02-29 2015-12-02 미쓰비시 마테리알 가부시키가이샤 트리클로로실란의 제조 방법 및 제조 장치
JP5444839B2 (ja) * 2008-05-28 2014-03-19 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
JP5316291B2 (ja) * 2008-08-05 2013-10-16 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
JP5316290B2 (ja) * 2008-08-05 2013-10-16 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
US9238876B2 (en) 2008-12-26 2016-01-19 Mitsubishi Materials Corporation Method of washing polycrystalline silicon, apparatus for washing polycrystalline silicon, and method of producing polycrystalline silicon
US8168123B2 (en) * 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
JP5358678B2 (ja) * 2009-03-30 2013-12-04 電気化学工業株式会社 ヘキサクロロジシランの回収方法およびその方法のためのプラント
WO2010123873A1 (en) 2009-04-20 2010-10-28 Ae Polysilicon Corporation A reactor with silicide-coated metal surfaces
EP2421640A1 (en) 2009-04-20 2012-02-29 Ae Polysilicon Corporation Methods and system for cooling a reaction effluent gas
CN101538044B (zh) * 2009-04-21 2011-04-06 天津大学 多晶硅生产过程中的三氯氢硅分离提纯系统及操作方法
US20130022745A1 (en) * 2009-08-14 2013-01-24 American Air Liquide, Inc. Silane blend for thin film vapor deposition
DE102009043946A1 (de) * 2009-09-04 2011-03-17 G+R Technology Group Ag Anlage und Verfahren zur Steuerung der Anlage für die Herstellung von polykristallinem Silizium
AU2011344089A1 (en) * 2010-12-17 2013-05-09 Dow Corning Corporation Method of making a trihalosilane
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
DE102013207441A1 (de) 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren zur Herstellung von Hexachlordisilan durch Spaltung von höheren Polychlorsilanen wie Octachlortrisilan
JP6131218B2 (ja) 2014-06-17 2017-05-17 信越化学工業株式会社 多結晶シリコン棒の表面温度の算出方法および制御方法、多結晶シリコン棒の製造方法、多結晶シリコン棒、ならびに、多結晶シリコン塊
JP6486049B2 (ja) * 2014-09-25 2019-03-20 デンカ株式会社 ペンタクロロジシランの製造方法並びに該方法により製造されるペンタクロロジシラン
TWI791547B (zh) 2017-07-31 2023-02-11 中國大陸商南大光電半導體材料有限公司 製備五氯二矽烷之方法及包含五氯二矽烷之經純化的反應產物
CN113371717B (zh) * 2021-06-10 2022-12-27 青海亚洲硅业半导体有限公司 一种分段控制的多晶硅制备方法

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US3933985A (en) * 1971-09-24 1976-01-20 Motorola, Inc. Process for production of polycrystalline silicon
US3809571A (en) * 1972-04-04 1974-05-07 Union Carbide Corp Process for making silicon metal
JPS5673617A (en) * 1979-11-17 1981-06-18 Osaka Titanium Seizo Kk Manufacture of trichlorosilane
FR2523113A1 (fr) * 1982-03-10 1983-09-16 G Pi Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
NO881270L (no) * 1987-05-14 1988-11-15 Dow Corning Framgangsmaate for aa redusere carboninnholdet i halvledere.
JPH0791049B2 (ja) * 1988-01-21 1995-10-04 大阪チタニウム製造株式会社 多結晶シリコンの製造におけるポリマーのトリクロロシラン転化方法
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
US5118486A (en) * 1991-04-26 1992-06-02 Hemlock Semiconductor Corporation Separation by atomization of by-product stream into particulate silicon and silanes
JP3853894B2 (ja) * 1996-01-23 2006-12-06 株式会社トクヤマ 塩化水素の減少した混合物の製造方法

Also Published As

Publication number Publication date
US20020187096A1 (en) 2002-12-12
EP1392601A1 (en) 2004-03-03
DE60201354D1 (de) 2004-10-28
JP2008303142A (ja) 2008-12-18
EP1392601B1 (en) 2004-09-22
WO2002100776A1 (en) 2002-12-19
DE60201354T2 (de) 2006-02-16
JP4532105B2 (ja) 2010-08-25
JP5374091B2 (ja) 2013-12-25
JP2004532786A (ja) 2004-10-28

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