EA200600192A1 - Способ получения трихлорсилана и кремния, используемого для получения трихлорсилана - Google Patents
Способ получения трихлорсилана и кремния, используемого для получения трихлорсиланаInfo
- Publication number
- EA200600192A1 EA200600192A1 EA200600192A EA200600192A EA200600192A1 EA 200600192 A1 EA200600192 A1 EA 200600192A1 EA 200600192 A EA200600192 A EA 200600192A EA 200600192 A EA200600192 A EA 200600192A EA 200600192 A1 EA200600192 A1 EA 200600192A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- trichlorosilane
- silicon
- bed reactor
- silicon used
- producing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
- C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
Abstract
Настоящее изобретение относится к способу для получения трихлорсилана взаимодействием кремния с газообразным HCl при температуре от 250 до 1100°С и абсолютном давлении 0,5-30 атм в реакторе с псевдоожиженным слоем, в реакторе с движущимся слоем или в реакторе с неподвижном слоем, где подаваемый в реактор кремний содержит от 30 до 10000 промиль хрома. Кроме того, изобретение относится к кремнию, используемому при получении трихлорсилана взаимодействием кремния с газообразным HCl, содержащим от 30 до 10000 промиль хрома, при этом оставшаяся часть, за исключением обычных примесей, приходится на кремний.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20033093A NO321276B1 (no) | 2003-07-07 | 2003-07-07 | Fremgangsmate for fremstilling av triklorsilan og silisium for bruk ved fremstilling av triklorsilan |
PCT/NO2004/000186 WO2005003030A1 (en) | 2003-07-07 | 2004-06-24 | Method for production of trichlorosilane and silicon for use in the production of trichlorosilane |
Publications (2)
Publication Number | Publication Date |
---|---|
EA200600192A1 true EA200600192A1 (ru) | 2006-06-30 |
EA009060B1 EA009060B1 (ru) | 2007-10-26 |
Family
ID=27800779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA200600192A EA009060B1 (ru) | 2003-07-07 | 2004-06-24 | Способ получения трихлорсилана и кремния, используемого для получения трихлорсилана |
Country Status (11)
Country | Link |
---|---|
US (1) | US7462341B2 (ru) |
EP (1) | EP1680357B1 (ru) |
JP (1) | JP4778896B2 (ru) |
KR (1) | KR100752810B1 (ru) |
CN (1) | CN100349797C (ru) |
AT (1) | ATE409678T1 (ru) |
DE (2) | DE602004016876D1 (ru) |
EA (1) | EA009060B1 (ru) |
ES (1) | ES2310741T3 (ru) |
NO (1) | NO321276B1 (ru) |
WO (1) | WO2005003030A1 (ru) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO20043828L (no) * | 2004-09-13 | 2006-03-14 | Elkem As | Fremgangsmate for fremstilling av triklorsilan, fremgangsmate for fremstilling av silisium og silisium for bruk ved fremstilling av triklorsilan |
NO20054402L (no) * | 2005-09-22 | 2007-03-23 | Elkem As | Method for production of trichlorosilane and silicon for use in the production of trichlorosilane |
DK2371383T3 (en) | 2005-12-29 | 2015-11-30 | Boehringer Ingelheim Vetmed | Use of a PCV2 immunogenic composition for reduction of clinical symptoms in pigs |
KR101573933B1 (ko) * | 2008-02-29 | 2015-12-02 | 미쓰비시 마테리알 가부시키가이샤 | 트리클로로실란의 제조 방법 및 제조 장치 |
US20100264362A1 (en) * | 2008-07-01 | 2010-10-21 | Yongchae Chee | Method of producing trichlorosilane (TCS) rich Chlorosilane product stably from a fluidized gas phase reactor (FBR) and the structure of the reactor |
DE102008041974A1 (de) | 2008-09-10 | 2010-03-11 | Evonik Degussa Gmbh | Vorrichtung, deren Verwendung und ein Verfahren zur energieautarken Hydrierung von Chlorsilanen |
WO2010074673A1 (en) * | 2008-12-23 | 2010-07-01 | Arise Technologies Corporation | Method and apparatus for the production of chlorosilanes |
KR101687833B1 (ko) * | 2009-01-20 | 2016-12-19 | 미쓰비시 마테리알 가부시키가이샤 | 트리클로로실란 제조 장치 및 트리클로로실란 제조 방법 |
US8168123B2 (en) * | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
JP2012523963A (ja) | 2009-04-20 | 2012-10-11 | エーイー ポリシリコン コーポレーション | ケイ化物がコーティングされた金属表面を有する反応器 |
TWI454309B (zh) * | 2009-04-20 | 2014-10-01 | Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd | 用於將反應排出氣體冷卻之方法及系統 |
NO20100358A1 (no) * | 2010-03-12 | 2011-09-13 | Elkem As | Fremgangsmate for fremstilling av triklorsilan fra silisium, hydrogen og silisiumtetraklorid |
NO334216B1 (no) | 2010-08-13 | 2014-01-13 | Elkem As | Fremgangsmåte for fremstilling av triklorsilan og silisium for bruk ved fremstilling av triklorsilan |
US20150030520A1 (en) * | 2012-03-14 | 2015-01-29 | Centrotherm Photovoltaics Usa, Inc. | Trichlorosilane production |
US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
WO2014165165A1 (en) * | 2013-03-13 | 2014-10-09 | Centrotherm Photovoltaics Usa, Inc. | Temperature management in chlorination processes and systems related thereto |
DE102013215011A1 (de) | 2013-07-31 | 2015-02-05 | Wacker Chemie Ag | Verfahren zur Herstellung von Trichlorsilan |
KR101580171B1 (ko) | 2014-01-23 | 2015-12-24 | 한국화학연구원 | 금속 실리사이드 표면개질 방법, 표면개질된 금속 실리사이드를 이용한 삼염화실란의 제조방법 및 제조장치 |
EP3233732B8 (en) * | 2014-12-19 | 2020-06-17 | DDP Specialty Electronic Materials US 9, LLC | Process for preparing monohydrogentrihalosilanes |
WO2020239228A1 (de) * | 2019-05-29 | 2020-12-03 | Wacker Chemie Ag | Verfahren zur herstellung von trichlorsilan mit strukturoptimierten silicium-partikeln |
JP7278888B2 (ja) * | 2019-06-28 | 2023-05-22 | 高純度シリコン株式会社 | トリクロロシランの製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2380995A (en) * | 1941-09-26 | 1945-08-07 | Gen Electric | Preparation of organosilicon halides |
US4247528A (en) * | 1979-04-11 | 1981-01-27 | Dow Corning Corporation | Method for producing solar-cell-grade silicon |
US4585643A (en) * | 1985-05-31 | 1986-04-29 | Union Carbide Corporation | Process for preparing chlorosilanes from silicon and hydrogen chloride using an oxygen promoter |
DE3809784C1 (ru) * | 1988-03-23 | 1989-07-13 | Huels Ag, 4370 Marl, De | |
KR950002860B1 (ko) * | 1992-06-13 | 1995-03-27 | 한국과학기술연구원 | 클로로알켄닐실란들과그제조방법 |
US5871705A (en) * | 1996-09-19 | 1999-02-16 | Tokuyama Corporation | Process for producing trichlorosilane |
DE19645359A1 (de) * | 1996-11-04 | 1998-05-07 | Bayer Ag | Verfahren zur Herstellung von Alkylhalogensilanen |
DE10063863A1 (de) * | 2000-12-21 | 2003-07-10 | Solarworld Ag | Wirbelbettreaktor für die Trichlorsilansynthese |
JP3812642B2 (ja) * | 2001-02-14 | 2006-08-23 | 信越化学工業株式会社 | オルガノハロシランの製造方法 |
DE10118483C1 (de) * | 2001-04-12 | 2002-04-18 | Wacker Chemie Gmbh | Staubrückführung bei der Direktsynthese von Chlor- und Methylchlorsilanen in Wirbelschicht |
NO20014148A (no) * | 2001-08-27 | 2003-02-03 | Elkem As | Fremgangsmåte for fjerning av forurensinger fra silisiuminneholdende residuer |
US7780938B2 (en) * | 2006-04-13 | 2010-08-24 | Cabot Corporation | Production of silicon through a closed-loop process |
-
2003
- 2003-07-07 NO NO20033093A patent/NO321276B1/no not_active IP Right Cessation
-
2004
- 2004-06-24 DE DE602004016876T patent/DE602004016876D1/de active Active
- 2004-06-24 KR KR1020067000260A patent/KR100752810B1/ko not_active IP Right Cessation
- 2004-06-24 JP JP2006518566A patent/JP4778896B2/ja not_active Expired - Fee Related
- 2004-06-24 US US10/563,781 patent/US7462341B2/en not_active Expired - Fee Related
- 2004-06-24 EP EP04748762A patent/EP1680357B1/en not_active Revoked
- 2004-06-24 DE DE04748762T patent/DE04748762T1/de active Pending
- 2004-06-24 AT AT04748762T patent/ATE409678T1/de active
- 2004-06-24 ES ES04748762T patent/ES2310741T3/es active Active
- 2004-06-24 EA EA200600192A patent/EA009060B1/ru not_active IP Right Cessation
- 2004-06-24 WO PCT/NO2004/000186 patent/WO2005003030A1/en active Application Filing
- 2004-06-24 CN CNB2004800196948A patent/CN100349797C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ATE409678T1 (de) | 2008-10-15 |
DE602004016876D1 (de) | 2008-11-13 |
EP1680357B1 (en) | 2008-10-01 |
DE04748762T1 (de) | 2007-06-06 |
CN100349797C (zh) | 2007-11-21 |
EP1680357A1 (en) | 2006-07-19 |
EA009060B1 (ru) | 2007-10-26 |
NO321276B1 (no) | 2006-04-18 |
ES2310741T3 (es) | 2009-01-16 |
US7462341B2 (en) | 2008-12-09 |
NO20033093D0 (no) | 2003-07-07 |
NO20033093L (no) | 2005-01-10 |
KR20060056306A (ko) | 2006-05-24 |
JP2007527352A (ja) | 2007-09-27 |
JP4778896B2 (ja) | 2011-09-21 |
CN1819971A (zh) | 2006-08-16 |
WO2005003030A1 (en) | 2005-01-13 |
US20070086936A1 (en) | 2007-04-19 |
KR100752810B1 (ko) | 2007-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ BY KG MD TJ TM |
|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): KZ RU |