WO2023169041A1 - Procédé de formation de motifs pour couche de film et procédé de préparation de dispositif à semi-conducteurs - Google Patents

Procédé de formation de motifs pour couche de film et procédé de préparation de dispositif à semi-conducteurs Download PDF

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Publication number
WO2023169041A1
WO2023169041A1 PCT/CN2022/140333 CN2022140333W WO2023169041A1 WO 2023169041 A1 WO2023169041 A1 WO 2023169041A1 CN 2022140333 W CN2022140333 W CN 2022140333W WO 2023169041 A1 WO2023169041 A1 WO 2023169041A1
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WIPO (PCT)
Prior art keywords
layer
film material
thin film
material layer
photoresist
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PCT/CN2022/140333
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English (en)
Chinese (zh)
Inventor
李翔
谢志平
丛茂杰
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绍兴中芯集成电路制造股份有限公司
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Publication of WO2023169041A1 publication Critical patent/WO2023169041A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Definitions

  • the invention relates to the field of semiconductor technology, and in particular to a patterning method for a film layer and a method for preparing a semiconductor device.
  • An existing patterning method includes: first, forming a patterned photoresist layer on the thin film material layer to be patterned, so that the photoresist layer covers the parts that do not need to be removed; then, the thin film material layer is The portion of the film material layer that is not covered by the photoresist layer is removed, and the portion of the film material layer that is covered by the photoresist layer is retained to achieve patterning of the film layer, and finally the photoresist layer can be further removed.
  • Another patterning method is achieved by using a lift-off process, that is, a patterned photoresist layer is first formed on the substrate, and the area where the film layer needs to be formed is exposed in the photoresist layer; then, deposition After that, the photoresist layer is peeled off to simultaneously remove the thin film material attached to the photoresist layer, so that the thin film material in the area where the film layer needs to be formed is retained, thereby forming a patterned film layer.
  • a lift-off process that is, a patterned photoresist layer is first formed on the substrate, and the area where the film layer needs to be formed is exposed in the photoresist layer; then, deposition After that, the photoresist layer is peeled off to simultaneously remove the thin film material attached to the photoresist layer, so that the thin film material in the area where the film layer needs to be formed is retained, thereby forming a patterned film layer.
  • both of the above-mentioned patterning methods have certain process defects.
  • photoresist easily remains on the substrate, causing device defects.
  • its process capability is also limited by the thickness of the photoresist layer, making it difficult to be used in the patterning process of larger thickness film layers.
  • the object of the present invention is to provide a patterning method for a film layer to optimize the patterning effect and reduce defects caused by the patterning process.
  • the present invention provides a method for patterning a film layer, which includes: forming a thin film material layer on a substrate; forming a patterned photoresist layer on the thin film material layer, and the patterning method
  • the photoresist layer exposes part of the thin film material layer; the exposed part of the thin film material layer is subjected to plasma surface treatment to passivate the top of the exposed thin film material layer to form a passivation layer; and, remove all The photoresist layer, and remove the portion of the thin film material layer not covered with the passivation layer, wherein the erosion rate of the portion of the thin film material layer not covered with the passivation layer is higher than that of the passivation layer
  • the erosion rate of the passivation layer is such that the portion of the thin film material layer covered with the passivation layer is retained.
  • the plasma surface treatment is performed using oxygen-containing ions to form an oxide layer on top of the thin film material layer.
  • the plasma surface treatment is performed using nitrogen-containing ions to form a nitride layer on top of the thin film material layer.
  • etching process and/or a dry etching process to etch the thin film material layer to remove the passivation layer not covered by the thin film material layer. layer part.
  • the material of the thin film material layer includes nickel.
  • the photoresist stripping liquid can be used to erode the thin film material layer to remove the passivation layer not covered by the thin film material layer. layer part.
  • the thin film material layer is a metal material layer. And, after removing the portion of the thin film material layer that is not covered with the passivation layer, a thermal annealing process may also be included.
  • the substrate includes a silicon substrate or a silicon carbide substrate.
  • the present invention also provides a method for preparing a semiconductor device, including the patterning method of the film layer as described above.
  • the photoresist layer is formed above the film material layer to be patterned, which avoids the photoresist layer from contacting the substrate surface and reduces the photoresist residue on the substrate. Bottom risk.
  • plasma surface treatment is performed on the portion of the thin film material layer that needs to be retained under the mask of the photoresist layer, so that the top surface of the portion is passivated to form a passivation layer, so that the formed passivation layer can be used
  • the thin film material underneath is protected from being removed, and only the portion of the thin film material layer that is not covered by the passivation layer is removed to realize the patterning process of the film layer.
  • the patterned photoresist layer covers the portion of the thin film material layer that needs to be removed. Therefore, even if there is photoresist residue when the photoresist layer is peeled off, when the thin film material layer is subsequently etched The remaining photoresist will be further removed to prevent the photoresist residue from adhering to the substrate and making it difficult to remove. Therefore, the patterning method provided by the present invention effectively reduces the defects caused by the patterning process, and the process is simple, achieving further optimization of the patterning process.
  • FIG. 1 is a schematic flowchart of a method for patterning a film layer in an embodiment of the present invention.
  • FIGS 2-5 are schematic structural diagrams of the film layer during the patterning process in one embodiment of the present invention.
  • the reference numbers are as follows: 100-substrate; 200-thin film material layer; 210-passivation layer; 300-photoresist layer.
  • the core idea of the present invention is to provide a new film layer patterning method.
  • the patterning method in one embodiment of the present invention may include the following steps.
  • Step S100 forming a thin film material layer on a substrate.
  • Step S200 Form a patterned photoresist layer on the thin film material layer, and the patterned photoresist layer exposes part of the thin film material layer.
  • Step S300 Perform plasma surface treatment on the exposed portion of the thin film material layer to passivate the top of the exposed thin film material layer to form a passivation layer.
  • Step S400 Remove the photoresist layer and remove the portion of the thin film material layer that is not covered with the passivation layer.
  • plasma surface treatment is performed on the portion of the thin film material layer that needs to be retained under the mask of the photoresist layer, so that the top surface of the portion is passivated to form a passivation layer.
  • the formed passivation layer can be used to protect the thin film material below it from being removed, and only the portion of the thin film material layer that is not covered by the passivation layer is removed to realize the patterning process of the thin film layer.
  • FIGS. 1 and 2 to 5 are schematic flowchart of a method for patterning a film layer in an embodiment of the present invention
  • FIGS. 2 to 5 are schematic structural diagrams of a film layer in the patterning process in an embodiment of the present invention.
  • step S100 with specific reference to FIG. 2, a thin film material layer 200 is formed on a substrate 100.
  • the substrate 100 may be a silicon substrate, a silicon germanium substrate, a silicon carbide substrate, etc.; for example, in one example, the substrate 100 is a silicon carbide epitaxial wafer, and the thickness of the silicon carbide epitaxial wafer is, for example, 200um ⁇ 500um.
  • the material and thickness of the thin film material layer 200 can be selected based on actual conditions.
  • the thin film material layer 200 may be a conductive material layer, where the conductive material includes, for example, a metal material.
  • the thin film material layer 200 is a metal material layer as an example.
  • the metal material may include nickel or titanium, or a combination of both, and the thickness of the metal material layer may be, for example, 50 nm- 600nm.
  • a patterned photoresist layer 300 is formed on the thin film material layer 200.
  • the photoresist layer 300 covers the portion of the thin film material layer 200 that needs to be removed, and exposes the portion of the thin film material layer 200 that needs to be retained.
  • the photoresist layer 300 is formed above the thin film material layer 200 and does not contact the surface of the substrate 100 , so the photoresist does not remain on the surface of the substrate 100 .
  • a photoresist layer needs to be formed on the surface of the substrate, and the surface of the substrate where the metal layer needs to be formed is exposed through photolithography and development. Photoresist is likely to remain on the exposed substrate surface, and when the metal layer is subsequently formed, it will further cause poor contact between the metal layer and the substrate.
  • the stripping process also has certain process limitations. For example, due to the thickness limit of the photoresist layer, it is difficult to realize the patterning process of a relatively thick metal layer.
  • the patterning method provided in this embodiment can effectively avoid the problem of photoresist remaining on the surface of the substrate, especially when facing the patterning of the metal layer.
  • the problem of poor contact performance caused by photoresist residue between the formed metal layer and the substrate can be avoided.
  • the patterning method provided by this implementation is also helpful to overcome the process limitations existing in the stripping process and reduce the difficulty of the patterning process.
  • step S300 with specific reference to FIG. 4 , plasma surface treatment is performed on the exposed portion of the thin film material layer 200 to passivate the top of the exposed thin film material layer 200 to form a passivation layer 210 .
  • the properties of the film layer on the top of the thin film material layer 200 are changed by passivating the top of the thin film material layer 200, so that the top passivated portion and the unpassivated portion of the thin film material layer 200 can be used in the subsequent etching process.
  • plasma is used to perform surface treatment on the thin film material layer 200 .
  • the thin film material layer 200 after surface treatment still has an unpassivated portion below its top; for example, taking the metal material layer as an example, after surface treatment of the metal material layer, only the top of the metal material layer can be passivated.
  • the lower part of the metal material layer is not passivated and still maintains its original properties (for example, conductive properties, etc.).
  • oxygen-containing plasma can be used to perform plasma surface treatment.
  • an oxide layer can be formed on the top of the exposed thin film material layer 200 in an oxygen atmosphere.
  • the formed oxide layer is The passivation layer 210 is formed.
  • a metal material layer as an example, a metal oxide layer will be formed on the top of the metal material layer in an oxygen atmosphere, and the metal oxide layer will constitute the passivation layer 210.
  • the top will be passivated to form nickel oxide.
  • nitrogen-containing plasma can also be used to perform plasma surface treatment.
  • the top of the exposed thin film material layer 200 can form a nitride layer in a nitrogen atmosphere.
  • the passivation layer 210 is formed by the chemical layer. Taking the metal material layer as an example, a metal nitride layer will be formed on the top of the metal material layer in a nitrogen atmosphere. For example, for a nickel metal layer, the top of the metal material layer will be passivated to form nickel nitride.
  • step S400 with specific reference to FIG. 5, the photoresist layer is removed, and the portion of the thin film material layer 200 that is not covered with the passivation layer 210 is removed. That is, the portion of the thin film material layer covered by the photoresist layer will continue to be removed.
  • the photoresist layer can be removed using a photoresist stripping solution. It should be noted that since the portion of the thin film material layer 200 covered by the photoresist layer corresponds to the portion that needs to be removed subsequently, even if there is photoresist residue after the photoresist layer is peeled off, As the subsequent thin film material layer is further removed, the remaining photoresist on it will be removed at the same time, thereby preventing the photoresist from remaining on the substrate.
  • the patterned photoresist layer needs to cover the parts of the thin film material layer that need to be retained, and expose the parts of the thin film material layer that do not need to be retained, and then based on the photoresist layer
  • the thin film material layer is etched under a mask so that the portion of the thin film material layer covered by the photoresist layer is retained, and then the photoresist layer is removed.
  • the photoresist layer is removed, it is easy to cause
  • the photoresist remains on the patterned film layer, and the photoresist residue in the stripping solution also easily adheres to the exposed substrate surface.
  • the thin film material layer 200 still covers the surface of the substrate 100, so the light can be effectively avoided.
  • the resist remains or adheres to the substrate surface; and with subsequent further etching of the thin film material layer 200, it is also beneficial to remove the remaining photoresist.
  • the portion of the thin film material layer 200 that needs to be removed is exposed, and a wet etching process and/or a dry etching process can be used to etch the portion.
  • the thin film material layer 200 is used to remove the portion of the thin film material layer 200 that is not covered by the passivation layer 210 .
  • the passivated portions of the passivation layer 210 and the thin film material layer 200 have different etching selectivity ratios. Therefore, the portions of the thin film material layer 200 that need to be retained can be added to the passivation layer 210 It will not be removed under protection, and the portion of the thin film material layer 200 that is not covered by the passivation layer will be etched.
  • a corresponding etching method and etchant can be selected according to the material of the thin film material layer 200 .
  • a metal etching solution can be used to wet-etch the metal material layer.
  • the thin film material layer 200 is a nickel layer or a titanium layer, for example, a nickel metal etching solution or a titanium layer can be used.
  • Metal etching liquid etches the thin film material layer 200 .
  • the photoresist stripping solution can also be directly sampled to etch the thin film material layer 200, which is beneficial to simplifying the process and saving costs.
  • the photoresist layer can be removed using EKC stripping liquid, and then the exposed nickel metal layer can be removed using the EKC stripping liquid.
  • the portion of the thin film material layer not covered with the passivation layer 210 is removed, and the portion covered with the passivation layer 210 is retained to form a patterned thin film layer.
  • the top part is the passivation layer 210 formed after passivation, while the bottom part of the passivation layer 210 is still an unpassivated part.
  • the passivation layer 210 can be further removed.
  • the thin film material layer as a metal material layer as an example, after patterning the metal material layer, it may also include: performing a thermal annealing process. Specifically, through the thermal annealing process, the metal in the metal material layer and the silicon in the substrate can react to generate metal silicide, forming an ohmic contact structure with low contact resistance.
  • this embodiment provides a method for patterning a film layer, which specifically involves performing plasma surface treatment on the portion of the thin film material layer that needs to be retained under the mask of the photoresist layer, so that the top surface of the portion is The surface is passivated to form a passivation layer, so that the formed passivation layer can be used to protect the film material below it from being removed, and only the part of the film material layer that is not covered with the passivation layer is removed to achieve the purpose of removing the passivation layer.
  • Graphical process In this way, the photoresist can be effectively prevented from contacting the substrate surface, reducing the risk of photoresist remaining on the substrate and reducing defects caused by the patterning process.
  • the patterning method as described above can be used to implement the patterning process.
  • the above-mentioned patterning method can be used to prepare an ohmic contact structure on a substrate, which has lower contact resistance between the prepared ohmic contact structure and the substrate and improves contact performance.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un procédé de formation de motifs pour une couche de film et un procédé de préparation d'un dispositif à semi-conducteurs. Dans le procédé de formation de motifs pour une couche de film, un traitement de surface de plasma est réalisé sur une partie, qui doit être réservée, dans une couche de matériau de film mince au moyen d'un masque dans une couche de résine photosensible de sorte que la surface supérieure de la partie est passivée pour former une couche de passivation, et la couche de passivation formée peut être utilisée pour empêcher le retrait d'un matériau de film mince au-dessous de la couche de passivation, ce qui permet d'obtenir un effet de formation de motifs de la couche de film. A l'aide du procédé de formation de motifs selon la présente invention, le problème des résidus de résine photosensible peut être efficacement amélioré, les défauts provoqués par un processus de formation de motifs sont réduits, le processus est simple et une optimisation supplémentaire du processus de formation de motifs est réalisée.
PCT/CN2022/140333 2022-03-10 2022-12-20 Procédé de formation de motifs pour couche de film et procédé de préparation de dispositif à semi-conducteurs WO2023169041A1 (fr)

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CN202210229014.5A CN114334642B (zh) 2022-03-10 2022-03-10 膜层的图形化方法及半导体器件的制备方法
CN202210229014.5 2022-03-10

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CN114334642B (zh) * 2022-03-10 2022-06-17 绍兴中芯集成电路制造股份有限公司 膜层的图形化方法及半导体器件的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1437237A (zh) * 2002-02-08 2003-08-20 旺宏电子股份有限公司 可避免氟化半导体元件的金属接点的方法
CN106298556A (zh) * 2015-05-19 2017-01-04 北大方正集团有限公司 一种芯片压焊块的制造方法及芯片
CN112017946A (zh) * 2019-05-31 2020-12-01 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法、晶体管
CN114334642A (zh) * 2022-03-10 2022-04-12 绍兴中芯集成电路制造股份有限公司 膜层的图形化方法及半导体器件的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930179B (zh) * 2009-06-19 2012-08-22 中芯国际集成电路制造(上海)有限公司 钝化光刻胶表面的方法以及光刻方法
CN102315100A (zh) * 2011-09-28 2012-01-11 上海宏力半导体制造有限公司 图形化膜层的方法
US8987139B2 (en) * 2013-01-29 2015-03-24 Applied Materials, Inc. Method of patterning a low-k dielectric film
CN103760749A (zh) * 2014-01-14 2014-04-30 北京京东方显示技术有限公司 薄膜图案的制造方法、显示基板
CN104022077B (zh) * 2014-05-27 2017-01-25 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN109103074B (zh) * 2018-08-06 2021-07-02 上海华虹宏力半导体制造有限公司 自对准双重图形化工艺的修正方法及其半导体器件
CN113651292B (zh) * 2021-10-21 2022-01-28 绍兴中芯集成电路制造股份有限公司 在腔体内形成膜层的方法及电子器件的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1437237A (zh) * 2002-02-08 2003-08-20 旺宏电子股份有限公司 可避免氟化半导体元件的金属接点的方法
CN106298556A (zh) * 2015-05-19 2017-01-04 北大方正集团有限公司 一种芯片压焊块的制造方法及芯片
CN112017946A (zh) * 2019-05-31 2020-12-01 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法、晶体管
CN114334642A (zh) * 2022-03-10 2022-04-12 绍兴中芯集成电路制造股份有限公司 膜层的图形化方法及半导体器件的制备方法

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