WO2022138711A1 - 複合材料、半導体パッケージ及び複合材料の製造方法 - Google Patents

複合材料、半導体パッケージ及び複合材料の製造方法 Download PDF

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Publication number
WO2022138711A1
WO2022138711A1 PCT/JP2021/047541 JP2021047541W WO2022138711A1 WO 2022138711 A1 WO2022138711 A1 WO 2022138711A1 JP 2021047541 W JP2021047541 W JP 2021047541W WO 2022138711 A1 WO2022138711 A1 WO 2022138711A1
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WIPO (PCT)
Prior art keywords
composite material
layer
thickness
copper
less
Prior art date
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Ceased
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PCT/JP2021/047541
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English (en)
French (fr)
Japanese (ja)
Inventor
徹 前田
美紀 宮永
大介 近藤
慧 平井
正幸 伊藤
伸一 山形
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ALMT Corp
Sumitomo Electric Industries Ltd
Original Assignee
ALMT Corp
Sumitomo Electric Industries Ltd
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Application filed by ALMT Corp, Sumitomo Electric Industries Ltd filed Critical ALMT Corp
Priority to US18/268,333 priority Critical patent/US12451407B2/en
Priority to DE112021006684.6T priority patent/DE112021006684T5/de
Priority to KR1020237021003A priority patent/KR102860491B1/ko
Priority to JP2022571545A priority patent/JP7658992B2/ja
Priority to CN202180087005.0A priority patent/CN116648315A/zh
Publication of WO2022138711A1 publication Critical patent/WO2022138711A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21B—ROLLING OF METAL
    • B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates

Definitions

  • Patent Document 1 Japanese Unexamined Patent Publication No. 2019-96654 describes a heat sink.
  • the heat sink described in Patent Document 1 has a first surface and a second surface. The second surface is the opposite side of the first surface.
  • the heat sink described in Patent Document 1 has a plurality of copper layers and a plurality of copper-molybdenum layers. The copper layer and the copper-molybdenum layer are alternately laminated along the thickness direction of the heat sink so that the copper layers are located on the first surface and the second surface of the heat sink.
  • the heat sink described in Patent Document 1 is joined to the package member by brazing.
  • the composite material of the present disclosure is plate-shaped and has a first surface and a second surface.
  • the second surface is the opposite side of the first surface.
  • the composite material comprises a plurality of first layers and at least one second layer.
  • the first layer and the second layer are alternately laminated along the thickness direction of the composite material so that the first layer is located on the first surface and the second surface.
  • the first layer is a layer containing copper.
  • the second layer is a layer of molybdenum powder impregnated with copper.
  • a compressive residual stress of 50 MPa or less acts on the first layer located on the first surface and the first layer located on the second surface.
  • FIG. 1 is a perspective view of the composite material 10.
  • FIG. 2 is a cross-sectional view taken along the line II-II of FIG.
  • FIG. 3A is a first explanatory view of a procedure for preparing a measurement sample of thermal conductivity in the thickness direction of the composite material 10.
  • FIG. 3B is a second explanatory view of a procedure for preparing a measurement sample of thermal conductivity in the thickness direction of the composite material 10.
  • FIG. 3C is a third explanatory diagram of a procedure for preparing a measurement sample of thermal conductivity in the thickness direction of the composite material 10.
  • FIG. 4 is an explanatory diagram of a method for evaluating the heat dissipation performance of the composite material 10.
  • FIG. 5 is a manufacturing process diagram of the composite material 10.
  • FIG. 6 is a cross-sectional view of the laminated body 20 as an example.
  • FIG. 7 is an exploded perspective view of the semiconductor package 100.
  • the heat dissipation plate described in Patent Document 1 has a coefficient of linear expansion due to cracks between the copper layer and the copper-molybdenum layer due to heat generated during brazing. Will increase.
  • the present disclosure provides a composite material capable of maintaining a low coefficient of linear expansion even after heat for brazing is applied, a semiconductor package using the composite material, and a method for manufacturing the composite material.
  • the composite material according to the embodiment of the present disclosure is plate-shaped and has a first surface and a second surface.
  • the second surface is the opposite side of the first surface.
  • the composite material comprises a plurality of first layers and at least one second layer.
  • the first layer and the second layer are alternately laminated along the thickness direction of the composite material so that the first layer is located on the first surface and the second surface.
  • the first layer is a layer containing copper.
  • the second layer is a layer of molybdenum powder impregnated with copper.
  • a compressive residual stress of 50 MPa or less acts on the first layer located on the first surface and the first layer located on the second surface.
  • the temperature of the composite material is changed from room temperature to 200 ° C. in the direction parallel to the first surface and the second surface.
  • the linear expansion coefficient of the composite material may be 6 ppm / K or more and 10 ppm / K or less.
  • the thermal conductivity of the composite material in the thickness direction may be 230 W / m ⁇ K or more.
  • the total number of the first layer and the number of the second layer may be 5 or more.
  • the thermal conductivity of the composite material in the thickness direction may be 261 W / m ⁇ K or more.
  • the composite materials of (1) to (3) above are parallel to the first surface and the second surface when the temperature of the composite material is changed from room temperature to 800 ° C. before being held at 800 ° C. for 15 minutes.
  • the coefficient of linear expansion of the composite material in the above direction may be 7.5 ppm / K or more and 8.5 ppm / K or less.
  • the thickness of the first layer located on the first surface and the first layer located on the second surface is 25% or less of the thickness of the composite material. There may be.
  • the thickness of the second layer may exceed 10 percent of the thickness of the composite.
  • the volume ratio of molybdenum in the second layer may be 55% or more.
  • the volume ratio of molybdenum in the composite may be greater than 13 percent and less than 43 percent.
  • the volume ratio of copper in the first layer located on the first surface and the volume ratio of copper in the first layer located on the second surface are 90%. It may be the above.
  • the thickness of the first layer located on the first surface and the thickness of the first layer located on the second surface may be 15% or more of the thickness of the composite material.
  • the temperature difference between the central portion of the first surface (second surface) and the end portion of the first surface (second surface) can be reduced.
  • the thickness of the second layer may be 18% or more of the thickness of the composite material.
  • the change in the coefficient of linear expansion of the composite material in the direction parallel to the first surface and the second surface when the temperature of the composite material is changed from room temperature to 200 ° C. before and after holding at 800 ° C. for 15 minutes is It may be 0.3 ppm / K or less.
  • the composite material according to another embodiment of the present disclosure is plate-shaped and has a first surface and a second surface.
  • the second surface is the opposite side of the first surface.
  • the composite material comprises a plurality of first layers and at least one second layer.
  • the first layer and the second layer are alternately laminated along the thickness direction of the composite material so that the first layer is located on the first surface and the second surface.
  • the first layer is a layer containing copper.
  • the second layer is a layer of molybdenum powder impregnated with copper.
  • the thermal conductivity of the composite material in the thickness direction is 230 W / m ⁇ K or more.
  • the coefficient of linear expansion of the composite material may be 7.5 ppm / K or more and 8.5 ppm / K or less.
  • the total number of the first layer and the number of the second layer may be 5 or more.
  • the thermal conductivity of the composite material in the thickness direction may be 261 W / m ⁇ K or more.
  • the thickness of the first layer located on the first surface and the first layer located on the second surface is 25% or less of the thickness of the composite material. There may be.
  • the thickness of the second layer may exceed 10 percent of the thickness of the composite.
  • the volume ratio of molybdenum in the second layer may be 55% or more.
  • the volume ratio of molybdenum in the composite may be greater than 13 percent and less than 43 percent.
  • the volume ratio of copper in the first layer located on the first surface and the volume ratio of copper in the first layer located on the second surface are 90%. It may be the above.
  • the thickness of the first layer located on the first surface and the thickness of the first layer located on the second surface may be 15% or more of the thickness of the composite material.
  • the temperature difference between the central portion of the first surface (second surface) and the end portion of the first surface (second surface) can be reduced.
  • the thickness of the second layer may be 18% or more of the thickness of the composite material.
  • the change in the coefficient of linear expansion of the composite material in the direction parallel to the first surface and the second surface when the temperature of the composite material is changed from room temperature to 200 ° C. before and after holding at 800 ° C. for 15 minutes is It may be 0.3 ppm / K or less.
  • the semiconductor package according to the embodiment of the present disclosure includes a plate-shaped composite material having a first surface and a second surface opposite to the first surface, and on the first surface and the second surface. It is equipped with a case member that is brazed to any of the above.
  • the composite material has a plurality of first layers and at least one second layer. The first layer and the second layer are alternately laminated along the thickness direction of the composite material so that the first layer is located on the first surface and the second surface.
  • the first layer is a layer containing copper.
  • the second layer is a layer of molybdenum powder impregnated with copper.
  • the coefficient of linear expansion of the composite material in the direction parallel to the first surface and the second surface when the temperature of the composite material is changed from room temperature to 200 ° C. is 6 ppm / K or more and 10 ppm / K or less.
  • the thermal conductivity of the composite material in the thickness direction is 230 W / m ⁇ K or more.
  • the low linear expansion coefficient and high thermal conductivity of the composite material can be maintained even after heat is applied during brazing.
  • the total number of the first layer and the number of the second layer may be 5 or more.
  • the thermal conductivity of the composite material in the thickness direction may be 261 W / m ⁇ K or more.
  • the thickness of the first layer located on the first surface and the thickness of the first layer located on the second surface is 25% or less of the thickness of the composite material. There may be.
  • the thickness of the second layer may exceed 10 percent of the thickness of the composite.
  • the volume ratio of molybdenum in the second layer may be 55% or more.
  • the volume ratio of molybdenum in the composite may be greater than 13 percent and less than 43 percent.
  • the volume ratio of copper in the first layer located on the first surface and the volume ratio of copper in the first layer located on the second surface are 90. It may be more than a percentage.
  • the thickness of the first layer located on the first surface and the thickness of the first layer located on the second surface may be 15% or more of the thickness of the composite material.
  • the thickness of the second layer may be 18% or more of the thickness of the composite material.
  • the change in the coefficient of linear expansion of the composite material in the direction parallel to the first surface and the second surface when the temperature of the composite material is changed from room temperature to 200 ° C. before and after holding at 800 ° C. for 15 minutes is It may be 0.3 ppm / K or less.
  • the method for producing a composite material includes a step of preparing a laminate, a step of heating the laminate, and a step of rolling the heated laminate. ..
  • the laminate has a first surface and a second surface opposite to the first surface.
  • the laminate has a plurality of first plate materials and at least one second plate material.
  • the first plate material and the second plate material are alternately arranged along the thickness direction of the laminated body so that the first plate material is located on the first surface and the second surface.
  • the first plate material contains copper.
  • the second plate material is a molybdenum powder impregnated with copper.
  • composite material 10 The composite material (hereinafter referred to as “composite material 10”) according to the first embodiment will be described.
  • FIG. 1 is a perspective view of the composite material 10.
  • FIG. 2 is a cross-sectional view taken along the line II-II of FIG. As shown in FIGS. 1 and 2, the composite material 10 has a plate shape.
  • the composite material 10 has a first surface 10a and a second surface 10b.
  • the second surface 10b is the opposite surface of the first surface 10a in the thickness direction of the composite material 10.
  • the thickness of the composite material 10 is defined as the thickness T1.
  • the thickness T1 is the distance between the first surface 10a and the second surface 10b.
  • the direction orthogonal to the thickness direction of the composite material 10 may be referred to as an in-layer direction.
  • the composite material 10 has a plurality of first layers 11 and at least one second layer 12.
  • the total number of the first layer 11 and the number of the second layer 12 is 3 or more.
  • the first layer 11 and the second layer 12 are alternately laminated along the thickness direction of the composite material 10. From another point of view, the second layer 12 is sandwiched between the two first layers 11.
  • the first layer 11 is located on the first surface 10a and the second surface 10b.
  • the first layer 11 located on the first surface 10a may be referred to as the first layer 11a
  • the first layer 11 located on the second surface 10b may be referred to as the first layer 11b.
  • the thickness of the first layer 11 is defined as the thickness T2.
  • the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b are preferably 15% or more of the thickness T1.
  • the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b are, for example, 25% or less of the thickness T1.
  • the first layer 11 is a layer containing copper.
  • the first layer 11 may contain molybdenum in addition to copper.
  • the volume ratio of copper in the first layer 11 is, for example, 80% or more.
  • the volume ratio of copper in the first layer 11 is preferably 90% or more.
  • the first layer 11 may be pure copper (the volume ratio of copper in the first layer 11 may be 100%).
  • the compressive residual stress acting on the first layer 11a and the compressive residual stress acting on the first layer 11b are 50 MPa or less.
  • the compressive residual stress acting on the first layer 11a and the compressive residual stress acting on the first layer 11b are preferably 40 MPa or less.
  • the compressive residual stress acting on the first layer 11a and the compressive residual stress acting on the first layer 11b are measured by an X-ray diffraction method (more specifically, the sin 2 ⁇ method).
  • a measurement sample having a width of 1 mm and a length of 5 mm is cut out from the composite material 10.
  • the width direction and the length direction of the measurement sample are orthogonal to the thickness direction of the composite material 10.
  • measurement samples are arranged on a plane so as to be in contact with each other. At this time, the measurement samples are arranged so that the cross sections parallel to the thickness direction of the composite material 10 face upward. Further, at this time, the measurement samples are arranged so as to form two rows in the length direction of the measurement samples.
  • the top surface of the arranged measurement samples is polished. This polishing is performed so that the step between the upper surfaces of each measurement sample is 0.1 mm or less.
  • the residual stress is measured using the sin 2 ⁇ method.
  • the second layer 12 is a layer of copper-molybdenum infiltrating material.
  • the copper-molybdenum infiltration material is a material that is rolled after impregnating the voids of molybdenum pressure powder (compression-molded molybdenum powder) with copper.
  • the volume ratio of molybdenum in the second layer 12 is 55% or more.
  • the volume ratio of molybdenum in the second layer 12 is, for example, 85% or less.
  • the thickness of the second layer 12 is defined as the thickness T3.
  • the thickness T3 preferably exceeds 10 percent of the thickness T1.
  • the thickness T3 is, for example, 35 percent or less of the thickness T1.
  • the volume ratio of molybdenum in the thickness T3 and the second layer 12 is preferably set so that the volume ratio of molybdenum in the composite material 10 is more than 13% and less than 43%.
  • the thickness T3 is preferably 18% or more and 35% or less of the thickness T1.
  • the coefficient of linear expansion of the composite material 10 in the in-layer direction when the temperature of the composite material 10 is changed from 27 ° C. (hereinafter referred to as “room temperature”) to 200 ° C. is 6 ppm. It is preferably / K or more and 10 ppm / K or less.
  • the linear expansion coefficient of the composite material 10 in the in-layer direction is measured based on the expansion displacement of the composite material 10 in the in-layer direction when the temperature changes from room temperature to 200 ° C., which is the semiconductor in which the composite material 10 is used. It takes into account the operating temperature of the package. Further, the coefficient of linear expansion of the composite material 10 in the in-layer direction is measured after holding it at 800 ° C. for 15 minutes in consideration of heating during brazing to the composite material 10.
  • the coefficient of linear expansion of the composite material 10 in the in-layer direction when the temperature of the composite material 10 was changed from room temperature to 800 ° C. before holding at 800 ° C. for 15 minutes was 7.5 ppm / K or more and 8.5 ppm /. It is preferably K or less. This is because the case member brazed to the composite material 10 is often formed of alumina, and the coefficient of linear expansion of alumina when the temperature is changed from room temperature to 800 ° C. is about 8 ppm / K. It was done.
  • the amount of change (increase) in the linear expansion coefficient of the composite material 10 in the in-layer direction when the temperature of the composite material 10 is changed from room temperature to 200 ° C. before and after holding at 800 ° C. for 15 minutes is 0. It is preferably 3 ppm / K or less.
  • the coefficient of linear expansion of the composite material 10 in the in-layer direction when the temperature changes from room temperature to 200 ° C. (800 ° C.) is such that the temperature changes from room temperature to 200 ° C. (800 ° C.) using TD5000SA (manufactured by Bruker AXS). It is calculated by measuring the expansion displacement of the composite material 10 in the in-layer direction when it changes.
  • the planar shape of the composite material 10 is a rectangular shape of 3 mm ⁇ 15 mm. The measured value is the average value for the three samples.
  • the coefficient of linear expansion may be calculated using the X-ray diffraction method.
  • the area of the heat radiating surface is 100 mm 2 or more.
  • the heat dissipation surface gathered together should be a rectangle with a side of approximately 10 mm or more.
  • the radiation surface is irradiated with X-rays at room temperature and 800 ° C., and the diffraction angle (2 ⁇ ) is derived from the diffraction peak corresponding to Cu (331).
  • the rate of change in the lattice spacing can be used as the coefficient of linear expansion. If there is anisotropy in the plane of the material, the sample is aligned so that the direction of measurement of the coefficient of linear expansion is parallel to the plane of incidence of the X-rays. The formula for calculating the coefficient of linear expansion when the room temperature is 25 ° C. is shown.
  • Linear expansion coefficient (1 / sin ( ⁇ at800 ° C) -1 / sin ( ⁇ at25 ° C)) ⁇ sin ( ⁇ at25 ° C) / (800-25)
  • ⁇ at 25 ° C. is 1/2 times the diffraction angle 2 ⁇ at the time of measuring 25 ° C.
  • ⁇ at 800 ° C. is 1/2 times the diffraction angle 2 ⁇ at the time of measuring 800 ° C.
  • the thermal conductivity of the composite material 10 in the thickness direction is preferably 230 W / m ⁇ K or more. After holding at 800 ° C. for 15 minutes, the thermal conductivity of the composite material 10 in the thickness direction is more preferably 261 W / m ⁇ K or more. This measurement of thermal conductivity is performed at room temperature. The thermal conductivity of the composite material 10 in the thickness direction is measured after being held at 800 ° C. for 15 minutes in consideration of heating during brazing of the composite material 10.
  • the thermal conductivity of the composite material 10 in the thickness direction is measured by a laser flash method. More specifically, the thermal diffusivity of the composite material 10 is measured using LFA457 MicroFlash (manufactured by NETZSCH), and the composite material is based on the thermal diffusivity and the volume ratio and specific heat of each constituent material of the composite material 10. The thermal conductivity in the thickness direction of 10 is calculated.
  • the composite material 10 When calculating the thermal conductivity of the composite material 10 in the thickness direction, the composite material 10 is cut out so that the planar shape is a circle with a diameter of 10 mm.
  • the specific heat of each constituent material is determined based on "Metal Data Book 4th Edition" (2004, Maruzen Publishing) edited by the Japan Institute of Metals. Further, prior to the measurement of the thermal conductivity of the composite material 10, the thermal conductivity of a pure copper sample having the same shape is measured under the same conditions, and the result is used as a reference to correct the measurement result.
  • FIG. 3A is a first explanatory view of a procedure for preparing a measurement sample of thermal conductivity in the thickness direction of the composite material 10.
  • the flakes 15 are cut out from the composite material 10 to be measured.
  • the thickness, length and width of the flakes 15 are t (mm), B (mm) and C (mm), respectively.
  • X be the number obtained by dividing 2 by t and rounding up to the nearest whole number.
  • the number obtained by dividing 10 by B and rounding up to the nearest whole number is Y1.
  • Y2 be the number obtained by dividing 10 by C and rounding up to the nearest whole number. From the composite material 10 to be measured, a number of flakes 15 equal to the product of X, Y1 and Y2 is cut out.
  • FIG. 3B is a second explanatory view of a procedure for preparing a measurement sample of thermal conductivity in the thickness direction of the composite material 10.
  • the block 16 is made from X slices 15.
  • the thickness, length and width of the block 16 are about 2 (mm), B (mm) and C (mm), respectively.
  • X thin sections 15 are stacked.
  • an amorphous powder formed of sterling silver having an average particle size of 4 ⁇ m is arranged between the adjacent thin pieces 15.
  • the amount of amorphous powder placed between adjacent flakes 15 is 0.2 g ⁇ 30 percent per 100 mm 2 .
  • a rectangular mold (not shown) having an opening having an inner dimension of B (mm) ⁇ C (mm) was prepared and stacked in the opening.
  • the flakes 15 are arranged.
  • the above mold is made of graphite.
  • the stacked flakes 15 are heat-treated with a load P applied.
  • the load P is 4.9 N or more and 9.8 N or less.
  • the heat treatment is performed in an inert gas atmosphere.
  • the heat treatment is performed at a holding temperature of 900 ° C. and a holding time of 10 minutes. By the heat treatment, the amorphous powder is softened and deformed, and the adjacent flakes 15 are adhered to each other, whereby the block 16 is produced.
  • FIG. 3C is a third explanatory diagram of a procedure for preparing a measurement sample of thermal conductivity in the thickness direction of the composite material 10.
  • a measurement sample 17 having a height of about 10 mm, a width of about 10 mm, and a thickness of about 2 mm is produced.
  • the adjacent blocks 16 are adhered to each other by an adhesive member.
  • an adhesive member a silver wax foil, a ceramic adhesive, or the like that can withstand a temperature of up to about 800 ° C. is used.
  • the block 16 in which one Y in the vertical direction and two Y in the horizontal direction may be fixed by winding a stainless wire or the like around the outer periphery thereof.
  • FIG. 4 is an explanatory diagram of a method for evaluating the heat dissipation performance of the composite material 10.
  • FIG. 4 schematically shows a state of the composite material 10 as viewed from one side surface.
  • the composite material 10 is cut into a rectangular shape having a length and width of 10 mm when viewed from a direction perpendicular to the first surface 10a.
  • a heating element 90 is brought into contact with the center of the first surface 10a of the cut composite material 10.
  • the heating element 90 has a rectangular shape having a length and width of 10 mm when viewed from a direction perpendicular to the first surface 10a.
  • the heating element of the heating element 90 is 50 W.
  • Aluminum fins 80 are adhered to the second surface 10b of the cut composite material 10 using silicone oil (G-751 manufactured by Shin-Etsu Chemical Co., Ltd.). This adhesion is performed by applying a load of 9.8 N with silicone oil placed between the second surface 10b of the cut composite material 10 and the aluminum fins 80.
  • silicone oil G-751 manufactured by Shin-Etsu Chemical Co., Ltd.
  • the temperature at the interface between the first surface 10a of the cut composite material 10 and the heating element 90 is defined as the first temperature.
  • the temperature at the end (corner portion) of the first surface 10a of the cut composite material 10 is defined as the second temperature.
  • the temperature at the interface between the second surface 10b of the cut composite material 10 and the aluminum fin 80 is defined as the third temperature.
  • the first temperature, the second temperature and the third temperature are measured by a thermocouple (not shown).
  • the air cooling for the aluminum fin 80 is controlled so that the third temperature is 25 ° C ⁇ 3 ° C.
  • the ambient temperature as the measurement environment is 25 ° C ⁇ 5 ° C.
  • the second temperature is the end temperature difference of the composite material 10. This end temperature difference is measured 10 times, and the average value is adopted. That is, the temperature difference at the end of the composite material 10 is such that the heating element 90 is in contact with the first surface 10a and the heating element 90 is in contact with the second surface 10b in a state where the aluminum fins 80 are adhered to the second surface 10b. It is the difference between the temperature at the portion of the surface 10a and the temperature at the end (corner portion) of the first surface 10a. The smaller the end temperature difference, the better the heat conduction in the layer of the composite material 10.
  • FIG. 5 is a manufacturing process diagram of the composite material 10. As shown in FIG. 5, the method for producing the composite material 10 includes a preparation step S1, a heating step S2, and a rolling step S3.
  • FIG. 6 is a cross-sectional view of the laminated body 20 as an example.
  • the laminated body 20 has a plurality of first plate members 21 and at least one second plate member 22.
  • the first plate material 21 is made of the same material as the first layer 11, and the second plate material 22 is made of the same material as the second layer 12.
  • the first plate material 21 and the second plate material 22 are alternately arranged along the thickness direction of the laminated body 20.
  • the laminated body 20 is fixed so that each layer does not move in the direction of the surface perpendicular to the thickness direction by covering the side surface with the same material as the first plate material 21.
  • the fixing method is not limited to this method, and may be fixed by using a method such as providing a through hole and fixing with a rivet. Further, each layer may be fixed on another plate material so as not to move with each other.
  • the laminated body 20 to which each phase layer is fixed is heated.
  • the laminate 20 is heated to a predetermined temperature in a hydrogen atmosphere.
  • This predetermined temperature is a temperature below the melting point of copper. This predetermined temperature is, for example, 900 ° C.
  • the rolling step S3 is performed after the heating step S2.
  • the laminated body 20 is passed through a rolling roller.
  • the first plate material 21 and the second plate material 22 are joined to each other while being rolled, and the composite material 10 having the structure shown in FIGS. 1 and 2 is manufactured. That is, in the composite material 10, the first layer 11 and the second layer 12 are joined by a hot rolling joining method.
  • a plate-shaped composite material in which layers containing copper (hereinafter referred to as “copper layer”) and layers containing molybdenum and copper (hereinafter referred to as “copper molybdenum layer”) are alternately laminated is used as a heat spreader for a semiconductor package.
  • a case member is attached to the surface of the composite material by brazing. At the time of this brazing, heating is usually performed at about 800 ° C. for about 15 minutes.
  • the copper layer and the copper molybdenum layer are usually bonded to each other by a diffusion bonding method.
  • a large compressive residual stress acts on the copper layer.
  • the copper layer is softened by the heating during the above brazing.
  • the compressive residual stress acting on the copper layer is released as the copper layer softens, the copper layer is greatly deformed and cracks occur at the bonding interface with the copper molybdenum layer. This crack increases the coefficient of linear expansion of the composite material in the in-layer direction.
  • the first layer 11 and the second layer 12 are joined by a hot rolling joining method.
  • the temperature of the first layer 11 is kept higher than the temperature of the second layer 12 due to the fact that the thermal conductivity of copper is higher than the thermal conductivity of molybdenum.
  • strain is unlikely to remain near the interface with the second layer 12.
  • the linear expansion coefficient of the composite material 10 in the in-layer direction when the temperature of the composite material 10 was changed from room temperature to 200 ° C. became 6 ppm / K or more and 10 ppm / K or less.
  • the thermal conductivity of the composite material 10 in the thickness direction is 230 W / m ⁇ K or more (preferably 261 W / m ⁇ K or more), even after the case member is brazed.
  • the coefficient of linear expansion of the composite material 10 in the in-layer direction can be reduced while maintaining the thermal conductivity of the composite material 10 in the thickness direction.
  • the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b are 15% or more of the thickness T1, and the volume ratio of copper in the first layer 11a and the volume ratio of copper in the first layer 11b.
  • heat is likely to diffuse along the in-layer direction on the first surface 10a side and the second surface 10b side. Therefore, in this case, the end temperature difference can be reduced.
  • Molybdenum has a coefficient of linear expansion smaller than that of copper and a thermal conductivity of smaller than that of copper. Therefore, as the volume ratio of molybdenum in the composite material 10 increases, the coefficient of linear expansion of the composite material 10 in the in-layer direction becomes smaller, and the thermal conductivity of the composite material 10 in the thickness direction becomes smaller. As the thickness T3 increases, the thermal conductivity of the composite material 10 in the thickness direction decreases, and the coefficient of linear expansion of the composite material 10 in the in-layer direction decreases. The larger the volume ratio of molybdenum in the second layer 12, the smaller the thermal conductivity of the composite material 10 in the thickness direction and the smaller the coefficient of linear expansion of the composite material 10 in the in-layer direction.
  • copper has a higher coefficient of linear expansion than molybdenum and a higher thermal conductivity than molybdenum. Therefore, as the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b become larger, the coefficient of linear expansion of the composite material 10 in the in-layer direction becomes larger, and the heat conduction in the thickness direction of the composite material 10 becomes larger. The rate increases.
  • the volume ratio of molybdenum is more than 13% and less than 43%
  • the thickness T3 exceeds 10% of the thickness T1
  • the volume ratio of molybdenum in the second layer 12 is 55%.
  • Samples 1 to 37 were prepared as samples of the composite material.
  • Samples 1 to 37 are composite materials having the structure shown in FIG.
  • the first layer 11 and the second layer 12 are joined by a hot rolling joining method.
  • the first layer 11 and the second layer 12 are joined by using the SPS (Spark Plasma Sintering) method.
  • the SPS method is a method of simultaneously applying Joule heating by energization and pressurization by a press mechanism to bond the interface of a material to be molded such as metal at the atomic level. Sintering and densification of powder materials and metal bonding of dissimilar materials (Diffusion bonding) can be performed. In this embodiment, the latter effect is used.
  • the laminated body 20 is arranged in a cylindrical graphite mold, and the laminated body 20 is heated and pressurized to a predetermined temperature while being pulsed.
  • This predetermined temperature is a temperature below the melting point of copper.
  • This predetermined temperature is, for example, 900 ° C.
  • the pressing force is adjusted under the condition that the relative density of the composite material is 99% by volume or more within the range where the durability of the graphite mold is maintained, and if it cannot be achieved at a predetermined temperature, the temperature is appropriately increased.
  • Table 1 shows the thickness T2 of the first layer 11a and the first layer 11b in the samples 1 to 37, the volume ratio of copper in the first layer 11a and the first layer 11b, and the thickness T3 of the second layer 12.
  • the volume ratio of molybdenum in the second layer 12, the number of layers, and the compressive residual stress acting on the first layer 11a and the first layer 11b are shown.
  • the thickness T1 is all 1 mm. Further, in Samples 1 to 37, the volume ratio of copper in the first layer 11 other than the first layer 11a and the first layer 11b is 100%. Further, the thickness T2 of the first layer 11 other than the first layer 11a and the first layer 11b is the thickness T2 of the first layer 11a and the first layer 11b, the thickness T3 of the second layer 12, the number of layers, and the number of layers. It is not shown in Table 1 because it is determined by the thickness T1.
  • Condition A is that the compressive residual stress acting on the first layer 11a and the first layer 11b is 50 MPa or less. Samples 1 to 30 satisfied condition A, but samples 31 to 37 did not satisfy condition A.
  • Condition B is that the thickness T2 of the first layer 11a and the first layer 11b is 25% or less of the thickness T1.
  • Condition C is that the volume ratio of molybdenum in the composite material is more than 13% and less than 43%.
  • Condition D is that the thickness T3 of the second layer 12 exceeds 10% of the thickness T1.
  • Condition E is that the volume ratio of molybdenum in the second layer 12 is 55% or more.
  • Samples 3 to 14, samples 18 to 24, and samples 26 to 29 further satisfied condition B, condition C, condition D, and condition E.
  • Sample 1 to Sample 2 Sample 15 to Sample 17, Sample 25 and Sample 30 did not satisfy at least one of Condition B, Condition C, Condition D and Condition E.
  • Condition F is that the volume ratio of copper in the first layer 11a and the first layer 11b is 90% or more.
  • the condition G is that the thickness T2 of the first layer 11a and the first layer 11b is 15% or more of the thickness T1.
  • Samples 3 to 12, samples 18 to 23, and samples 26 to 28 further satisfied the conditions F and G.
  • Samples 13 to 14, Samples 24 and 29 did not meet at least one of Condition F and Condition G.
  • Condition H is that the number of the first layer 11 and the number of the second layer 12 are 5 or more, and the thickness T3 is 18% or more of the thickness T1. Samples 3 to 11 and samples 18 to 19 further satisfy the condition H. On the other hand, Sample 12, Sample 20 to Sample 23, and Sample 26 to Sample 28 did not satisfy the condition H.
  • Table 2 shows the measurement results of the linear expansion coefficient in the in-layer direction, the thermal conductivity in the thickness direction, and the end temperature difference from Sample 1 to Sample 37.
  • first linear expansion coefficient the linear expansion coefficient in the in-layer direction when the temperature is changed from room temperature to 200 ° C after holding at 800 ° C. for 15 minutes
  • second linear expansion coefficient The coefficient of linear expansion in the in-layer direction when the temperature is changed from room temperature to 200 ° C before holding at 800 ° C for 15 minutes
  • the coefficient of linear expansion in the in-layer direction when the temperature was changed from room temperature to 800 ° C. (“3rd linear expansion coefficient” in Table 2) was measured before holding for 15 minutes. Thermal conductivity was measured after holding at 800 ° C. for 15 minutes.
  • the coefficient of linear expansion of samples 31 to 37 was larger than the coefficient of linear expansion of samples 1 to 30. As described above, Samples 1 to 30 satisfy Condition A, while Samples 31 to 37 do not satisfy Condition A.
  • the compressive residual stress acting on the first layer 11a and the first layer 11b is 50 MPa or less, so that when heat for brazing is applied, the first layer 11 and the second layer are used. It has been clarified that the generation of cracks at the junction interface with 12 is suppressed (a low coefficient of linear expansion is maintained even after heat for brazing is applied).
  • Samples 3 to 14, samples 18 to 24, and samples 26 to 29 have a first linear expansion coefficient of 6 ppm / K or more and 10 ppm / K or less, and a thermal conductivity in the in-layer direction of 261 W / m. It was further satisfied that it was K or higher. As described above, Sample 3 to Sample 14, Sample 18 to Sample 24, and Sample 26 to Sample 29 further satisfied Condition B, Condition C, Condition D, and Condition E.
  • the volume ratio of molybdenum is more than 13 percent and less than 43 percent
  • the thickness T3 is more than 10 percent of the thickness T1
  • the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b is more than 10 percent of the thickness T1
  • the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b is 55 percent or more
  • the heat in the thickness direction of the composite material 10 even after the heat for performing brazing is applied. It was clarified that the linear expansion coefficient of the composite material 10 in the in-layer direction can be reduced while maintaining the conductivity.
  • the third linear expansion coefficient of Sample 3 to Sample 14, Sample 18 to Sample 24, and Sample 26 to Sample 29 was 7.5 ppm / K or more and 8.5 ppm / K or less. As described above, Samples 3 to 14, Samples 18 to 23, and Samples 26 to 28 further satisfy Condition B, Condition C, Condition D, and Condition E.
  • the volume ratio of molybdenum is more than 13 percent and less than 43 percent
  • the thickness T3 is more than 10 percent of the thickness T1
  • the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b is 25% or less
  • the volume ratio of molybdenum in the second layer 12 is 55% or more
  • Sample 3 to Sample 12 The temperature difference at the ends of Sample 3 to Sample 12, Sample 18 to Sample 23, and Sample 26 to Sample 28 was less than 50 ° C. As described above, Samples 3 to 12, Samples 18 to 23, and Samples 26 to 28 further satisfy the conditions F and G.
  • the thickness T2 of the first layer 11a and the thickness T2 of the first layer 11b are 15% or more of the thickness T1, and the volume ratio of copper in the first layer 11a and the thickness T2 in the first layer 11b. It was clarified that the temperature difference at the end can be reduced by the volume ratio of copper being 90% or more.
  • the difference between the first linear expansion coefficient and the second linear expansion coefficient between Sample 3 to Sample 11 and Sample 18 to Sample 19 was 0.3 ppm / K or less. Further, in Samples 3 to 11 and Samples 18 to 19, the compressive residual stress acting on the first layer 11a and the first layer 11b was 40 MPa or less. From this comparison, the total number of the first layer 11 and the second layer 12 is 5 or more, and the thickness T3 is 18% or more of the thickness T1, so that the first layer 11a and the first layer are formed. It was clarified that the compressive residual stress acting on 11b was further reduced, and the increase in the coefficient of linear expansion in the in-layer direction due to the application of heat for brazing was suppressed.
  • semiconductor package 100 The semiconductor package (hereinafter referred to as “semiconductor package 100”) according to the second embodiment will be described.
  • FIG. 7 is an exploded perspective view of the semiconductor package 100.
  • the semiconductor package 100 includes a composite material 10, a semiconductor element 30, a case member 40, a lid 50, and terminals 60a and 60b.
  • the composite material 10 functions as a heat spreader in the semiconductor package 100.
  • the semiconductor element 30 is arranged on the first surface 10a.
  • a heat transfer member may be interposed between the semiconductor element 30 and the first surface 10a.
  • the semiconductor element 30 becomes a heat generation source during operation.
  • the case member 40 is made of, for example, a ceramic material.
  • the ceramic material is, for example, alumina.
  • the case member 40 is arranged on the first surface 10a so as to surround the semiconductor element 30.
  • the lower end of the case member 40 (the end on the first surface 10a side) and the first surface 10a are joined by, for example, brazing.
  • the lid 50 is made of, for example, a ceramic material or a metal material. The lid 50 closes the upper end side of the case member 40.
  • the terminal 60a and the terminal 60b are inserted into the case member 40. As a result, one end of the terminal 60a and the terminal 60b is located in the space defined by the first surface 10a, the case member 40 and the lid 50, and the other end of the terminal 60a and the terminal 60b is located outside the space. is doing.
  • the terminal 60a and the terminal 60a are made of, for example, a metal material.
  • the metallic material is, for example, Kovar.
  • one end side of the terminal 60a and the terminal 60b is electrically connected to the semiconductor element 30.
  • the semiconductor package 100 is electrically connected to a device or circuit different from the semiconductor package 100 on the other end side of the terminals 60a and 60b.
  • a heat radiating member 70 is attached to the second surface 10b.
  • the heat radiating member 70 is, for example, a metal plate in which a flow path through which the refrigerant flows is formed.
  • the heat radiating member 70 is not limited to this.
  • the heat radiating member 70 may be, for example, a cooling fin.
  • a heat transfer member may be interposed between the heat radiating member 70 and the second surface 10b.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Laminated Bodies (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Engineering (AREA)
PCT/JP2021/047541 2020-12-24 2021-12-22 複合材料、半導体パッケージ及び複合材料の製造方法 Ceased WO2022138711A1 (ja)

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DE112021006684.6T DE112021006684T5 (de) 2020-12-24 2021-12-22 Verbundmaterial, Halbleiterbaugruppe, und Verfahren zur Herstellung von Verbundmaterial
KR1020237021003A KR102860491B1 (ko) 2020-12-24 2021-12-22 복합 재료 및 반도체 패키지
JP2022571545A JP7658992B2 (ja) 2020-12-24 2021-12-22 複合材料、半導体パッケージ及び複合材料の製造方法
CN202180087005.0A CN116648315A (zh) 2020-12-24 2021-12-22 复合材料、半导体封装件、以及复合材料的制造方法

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JP2006060247A (ja) * 2005-10-03 2006-03-02 Kyocera Corp 放熱基体およびその製造方法
JP2007115731A (ja) * 2005-10-18 2007-05-10 Eiki Tsushima クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板
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KR20230122028A (ko) 2023-08-22
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