JPWO2009119438A1 - 絶縁基板およびその製造方法 - Google Patents
絶縁基板およびその製造方法 Download PDFInfo
- Publication number
- JPWO2009119438A1 JPWO2009119438A1 JP2010505592A JP2010505592A JPWO2009119438A1 JP WO2009119438 A1 JPWO2009119438 A1 JP WO2009119438A1 JP 2010505592 A JP2010505592 A JP 2010505592A JP 2010505592 A JP2010505592 A JP 2010505592A JP WO2009119438 A1 JPWO2009119438 A1 JP WO2009119438A1
- Authority
- JP
- Japan
- Prior art keywords
- powder
- layer
- stress relaxation
- insulating substrate
- relaxation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000000843 powder Substances 0.000 claims abstract description 249
- 239000011812 mixed powder Substances 0.000 claims abstract description 56
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims abstract description 14
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 239000002905 metal composite material Substances 0.000 claims abstract description 10
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 238000002490 spark plasma sintering Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 20
- 230000035882 stress Effects 0.000 description 70
- 238000005245 sintering Methods 0.000 description 29
- 239000010949 copper Substances 0.000 description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 21
- 230000008646 thermal stress Effects 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000010292 electrical insulation Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 239000002131 composite material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 238000005551 mechanical alloying Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000005219 brazing Methods 0.000 description 5
- 239000012809 cooling fluid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000009689 gas atomisation Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- -1 copper alloy Chemical compound 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/401—Cermets
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/408—Noble metals, e.g. palladium, platina or silver
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
一般的な製法により作製された平均粒径6μmのAlN粉末を黒鉛製ダイス内に入れ、ダイス内に臨むように1対の電極を配置した。その後、AlN粉末に50MPaの1軸方向の圧力を負荷した状態で、1対の電極間に最大2000Aのパルス電流を通電して焼結温度に5分間保持することにより放電プラズマ焼結を行い、1辺50mm、厚み0.635mmの正方形状の電気絶縁層(2)を形成した。上記放電プラズマ焼結の際のAlN粉末の焼結温度は1800℃であった。
一般的な製法により作製された平均粒径6μmのAlN粉末を黒鉛製ダイス内に入れ、ダイス内に臨むように1対の電極を配置した。その後、AlN粉末に50MPaの1軸方向の圧力を負荷した状態で、1対の電極間に最大1000Aのパルス電流を通電して焼結温度に5分間保持することにより放電プラズマ焼結を行い、1辺12mm、厚み0.635mmの正方形状の電気絶縁層(2)を形成した。上記放電プラズマ焼結の際のAlN粉末の焼結温度は1800℃であった。
1辺50mm、厚み0.635mmの正方形状のAlN板と、1辺48mm、厚み0.6mmの正方形状のAl板を用意した。ついで、Al−Si合金製ろう材を使用し、AlN板の両面にAl板をろう付することにより、絶縁基板を製造した。AlN板と両Al板との間のろう材層の厚みは0.05mmであった。こうして製造された絶縁基板において、一方のAl板が配線層になり、他方のAl板が応力緩和層となる。
1辺12mm、厚み0.635mmの正方形状のAlN板と、1辺10mm、厚み0.6mmの正方形状のAl板を用意した。ついで、Al−Si合金製ろう材を使用し、AlN板の両面にAl板をろう付することにより、絶縁基板を製造した。AlN板と両Al板との間のろう材層の厚みは0.05mmであった。こうして製造された絶縁基板において、一方のAl板が配線層になり、他方のAl板が応力緩和層となる。
実施例1〜2および比較例1〜2の絶縁基板を使用し、配線層の表面(図1の上面)と応力緩和層の表面との間の熱抵抗を求めた。その結果、実施例1の絶縁基板では0.0041K/W、実施例2の絶縁基板では0.0791K/W、比較例1の絶縁基板では0.0044K/W、比較例2の絶縁基板では0.0928K/Wであった。
Claims (14)
- 電気絶縁層と、電気絶縁層の一面に形成されかつ導電材料粉末の放電プラズマ焼結体からなる配線層と、電気絶縁層の他面に形成されかつ合金粉末または金属複合材料を構成する混合粉末の放電プラズマ焼結体からなる応力緩和層とよりなる絶縁基板。
- 電気絶縁層が、AlN粉末、Si3N4粉末、Al2O3粉末およびBeO粉末よりなる群から選ばれた1種の粉末の放電プラズマ焼結体からなる請求項1記載の絶縁基板。
- 配線層が、Al粉末、Cu粉末、Ag粉末およびAu粉末よりなる群から選ばれた1種の粉末の放電プラズマ焼結体からなる請求項1記載の絶縁基板。
- 応力緩和層が、Al−Si合金粉末、Cu粉末とMo粉末との混合粉末、Cu粉末とW粉末との混合粉末、Al粉末とSiC粉末との混合粉末およびSi粉末とSiC粉末との混合粉末よりなる群からえらばれた1種の粉末の放電プラズマ焼結体からなる請求項1記載の絶縁基板。
- 応力緩和層の熱膨張率が、電気絶縁層の熱膨張率と配線層の熱膨張率の中間となっている請求項1記載の絶縁基板。
- 配線層および応力緩和層のうち少なくとも応力緩和層が、円形である請求項1記載の絶縁基板。
- 配線層および応力緩和層のうち少なくとも応力緩和層が、だ円形である請求項1記載の絶縁基板。
- 配線層および応力緩和層のうち少なくとも応力緩和層が、角が丸くなった多角形状である請求項1記載の絶縁基板。
- 請求項1〜8のうちのいずれかに記載された絶縁基板における応力緩和層が、ヒートシンクに溶接またはろう付されているパワーモジュール用ベース。
- 請求項1〜8のうちのいずれかに記載された絶縁基板における応力緩和層が、ヒートシンクに高熱伝導性接着剤により接着されているパワーモジュール用ベース。
- 絶縁板からなる電気絶縁層の一面に、導電材料粉末を放電プラズマ焼結して配線層を形成し、同他面に、合金粉末、または金属複合材料を構成する混合粉末を放電プラズマ焼結して応力緩和層を形成する絶縁基板の製造方法。
- 絶縁板からなる電気絶縁層を、AlN粉末、Si3N4粉末、Al2O3粉末およびBeO粉末よりなる群から選ばれた1種の粉末を放電プラズマ焼結することにより形成する請求項11記載の絶縁基板の製造方法。
- 配線層を形成する導電材料粉末が、Al粉末、Cu粉末、Ag粉末およびAu粉末よりなる群から選ばれた1種の粉末からなる請求項11記載の絶縁基板の製造方法。
- 応力緩和層を形成する合金粉末がAl−Si合金粉末からなり、同じく金属複合材料を構成する混合粉末が、Cu粉末とMo粉末との混合粉末、Cu粉末とW粉末との混合粉末、Al粉末とSiC粉末との混合粉末およびSi粉末とSiC粉末との混合粉末よりなる群からえらばれた1種の混合粉末からなる請求項11記載の絶縁基板の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010505592A JP5520815B2 (ja) | 2008-03-25 | 2009-03-19 | 絶縁基板およびパワーモジュール用ベース |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008077295 | 2008-03-25 | ||
JP2008077295 | 2008-03-25 | ||
PCT/JP2009/055422 WO2009119438A1 (ja) | 2008-03-25 | 2009-03-19 | 絶縁基板およびその製造方法 |
JP2010505592A JP5520815B2 (ja) | 2008-03-25 | 2009-03-19 | 絶縁基板およびパワーモジュール用ベース |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009119438A1 true JPWO2009119438A1 (ja) | 2011-07-21 |
JP5520815B2 JP5520815B2 (ja) | 2014-06-11 |
Family
ID=41113633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010505592A Active JP5520815B2 (ja) | 2008-03-25 | 2009-03-19 | 絶縁基板およびパワーモジュール用ベース |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110005810A1 (ja) |
JP (1) | JP5520815B2 (ja) |
CN (1) | CN101981692B (ja) |
DE (1) | DE112009000555T5 (ja) |
WO (1) | WO2009119438A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8472193B2 (en) * | 2008-07-04 | 2013-06-25 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device |
US9096471B2 (en) | 2009-11-27 | 2015-08-04 | Showa Denko K.K. | Method for producing a layered material |
JP5654369B2 (ja) * | 2010-02-09 | 2015-01-14 | 昭和電工株式会社 | 積層材の製造方法 |
JP5546889B2 (ja) * | 2010-02-09 | 2014-07-09 | 日本電産エレシス株式会社 | 電子部品ユニット及びその製造方法 |
JP2012195568A (ja) * | 2011-02-28 | 2012-10-11 | Koa Corp | 金属ベース回路基板 |
CN102856272A (zh) * | 2011-06-27 | 2013-01-02 | 北京兆阳能源技术有限公司 | 一种绝缘散热电子组件 |
DE102014220650A1 (de) | 2014-10-13 | 2016-04-14 | Heraeus Deutschland GmbH & Co. KG | Optimiertes Leiterbahndesign von metallischen Materialien auf keramischen Substanzen |
GB201701173D0 (en) * | 2017-01-24 | 2017-03-08 | Element Six Tech Ltd | Synthetic diamond plates |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000082774A (ja) * | 1998-06-30 | 2000-03-21 | Sumitomo Electric Ind Ltd | パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル |
JP2003078087A (ja) * | 2001-09-04 | 2003-03-14 | Kubota Corp | 半導体素子用フィン付き放熱性複合基板 |
JP2003124410A (ja) * | 2001-10-19 | 2003-04-25 | Yamaha Corp | 多層ヒートシンクおよびその製造方法 |
JP2004153075A (ja) | 2002-10-31 | 2004-05-27 | Mitsubishi Materials Corp | パワーモジュール用基板及びパワーモジュール |
-
2009
- 2009-03-19 DE DE112009000555T patent/DE112009000555T5/de not_active Withdrawn
- 2009-03-19 US US12/736,203 patent/US20110005810A1/en not_active Abandoned
- 2009-03-19 JP JP2010505592A patent/JP5520815B2/ja active Active
- 2009-03-19 WO PCT/JP2009/055422 patent/WO2009119438A1/ja active Application Filing
- 2009-03-19 CN CN2009801105440A patent/CN101981692B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2009119438A1 (ja) | 2009-10-01 |
JP5520815B2 (ja) | 2014-06-11 |
CN101981692B (zh) | 2012-11-21 |
DE112009000555T5 (de) | 2011-01-27 |
US20110005810A1 (en) | 2011-01-13 |
CN101981692A (zh) | 2011-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5520815B2 (ja) | 絶縁基板およびパワーモジュール用ベース | |
CN104718616B (zh) | 自带散热器的功率模块用基板、自带散热器的功率模块及自带散热器的功率模块用基板的制造方法 | |
JP4015023B2 (ja) | 電子回路用部材及びその製造方法並びに電子部品 | |
CN102574361B (zh) | 层合材料及其制造方法 | |
JP2007019203A (ja) | 放熱装置 | |
JP2010109132A (ja) | 熱電モジュールを備えたパッケージおよびその製造方法 | |
JP5957862B2 (ja) | パワーモジュール用基板 | |
JP6638282B2 (ja) | 冷却器付き発光モジュールおよび冷却器付き発光モジュールの製造方法 | |
CN108140705B (zh) | 发光模块用基板、发光模块、带制冷器的发光模块用基板及发光模块用基板的制造方法 | |
JP2004022973A (ja) | セラミック回路基板および半導体モジュール | |
JP2005332874A (ja) | 回路基板及びこれを用いた半導体装置 | |
JP2011071260A (ja) | 積層材およびその製造方法、絶縁積層材およびその製造方法 | |
WO2017047627A1 (ja) | 熱電変換モジュール及び熱電変換装置 | |
JP2007096252A (ja) | 液冷式回路基板および液冷式電子装置 | |
JP4459031B2 (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP2003283063A (ja) | セラミック回路基板 | |
JP5614127B2 (ja) | パワーモジュール用基板及びその製造方法 | |
JP5666372B2 (ja) | 絶縁基板用積層材 | |
JP2006013420A (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP3960192B2 (ja) | 放熱体 | |
TWI801689B (zh) | 接合體、附散熱片絕緣電路基板、及散熱片 | |
JP3933031B2 (ja) | 放熱体 | |
JP2004327732A (ja) | セラミック回路基板及び電気回路モジュール | |
JP2018137395A (ja) | Ledモジュール、及び、絶縁回路基板 | |
JP4548317B2 (ja) | 絶縁回路基板及びこれを備えるパワーモジュール構造体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111205 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130903 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131025 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140311 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140407 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5520815 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |