WO2022137467A1 - 静電チャック及び処理装置 - Google Patents

静電チャック及び処理装置 Download PDF

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Publication number
WO2022137467A1
WO2022137467A1 PCT/JP2020/048578 JP2020048578W WO2022137467A1 WO 2022137467 A1 WO2022137467 A1 WO 2022137467A1 JP 2020048578 W JP2020048578 W JP 2020048578W WO 2022137467 A1 WO2022137467 A1 WO 2022137467A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrostatic chuck
sprayed coating
dielectric layer
ceramic sprayed
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/048578
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
剛 高畠
智博 中筋
亮 伊藤
健太郎 瀬戸
豊 大本
裕穂 北田
一海 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tocalo Co Ltd
Hitachi High Tech Corp
Original Assignee
Tocalo Co Ltd
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tocalo Co Ltd, Hitachi High Tech Corp filed Critical Tocalo Co Ltd
Priority to KR1020227008008A priority Critical patent/KR102626584B1/ko
Priority to CN202080063677.3A priority patent/CN114981949B/zh
Priority to JP2022513924A priority patent/JP7234459B2/ja
Priority to US17/642,083 priority patent/US11955360B2/en
Priority to PCT/JP2020/048578 priority patent/WO2022137467A1/ja
Priority to TW110147038A priority patent/TWI782819B/zh
Publication of WO2022137467A1 publication Critical patent/WO2022137467A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Definitions

  • the present invention relates to an electrostatic chuck and a processing apparatus provided with the electrostatic chuck.
  • an electrostatic chuck is used to hold a semiconductor wafer.
  • a chuck electrode is provided on a metal mounting table via an insulating layer, and a ceramic dielectric layer is laminated so as to cover the chuck electrode. It is known that the surface is an electrostatic adsorption surface for holding a semiconductor wafer.
  • the electrostatic chuck is arranged in a plasma processing device such as a plasma etching device.
  • the electrostatic adsorption surface of the electrostatic chuck arranged in the plasma processing apparatus is required to have corrosion resistance to plasma gas and a cleaning liquid. This is because the electrostatic chuck is used repeatedly.
  • a cleaning step is performed for each semiconductor wafer or lot in order to remove the reaction product generated from the material to be processed adhering to the inner wall of the etching chamber.
  • plasma cleaning using a halogen such as fluorine (F) or a mixed gas containing a halogen is performed.
  • the electrostatic adsorption surface of the electrostatic chuck is also exposed to the plasma gas used for plasma cleaning.
  • a protective layer on the electrostatic adsorption surface of the electrostatic chuck arranged in the plasma processing device to prevent corrosion by plasma gas (including plasma gas used in the cleaning process) and cleaning liquid.
  • a means for forming the protective layer for example, a PVD method, a CVD method, a thermal spraying method, a coating method and the like are used.
  • a thermal spraying method capable of forming a ceramic (for example, ytria) coating with a thickness of about several hundred ⁇ m is suitable as a means for forming a protective layer having high corrosion resistance.
  • the film formed by the thermal spraying method often has pores, and in order to close the pores, a post-treatment called a pore-sealing treatment may be performed.
  • Organic resins such as epoxy resins are often used for the sealing treatment, but there is also a method of applying a coating material containing an inorganic component and then volatilizing the solvent component to fill the pores with the inorganic component. (See, for example, Patent Documents 1 and 2).
  • the sealing component filled in the pores of the thermal spray coating as the protective layer disappears, the inside of the dielectric layer is exposed to plasma gas, which may affect the characteristics of the dielectric layer.
  • the dielectric layer may adhere to the semiconductor wafer due to cracking or wear of the dielectric layer, and as a result, the yield of the semiconductor wafer may decrease, or the electrical characteristics of the dielectric layer itself may be impaired, causing adsorption failure. be.
  • Electrostatic chucks can be divided into several types, such as Johnson-Labeck force type and Coulomb force type, depending on the electrostatic adsorption mechanism.
  • the electrostatic adsorption surface has a highly corrosion-resistant dielectric layer. May not be formed.
  • the Itria coating cannot be used as a dielectric layer of a Johnson-Labeck force type electrostatic chuck in which a small amount of current flows on the outermost surface due to its large volume resistivity.
  • a thermal spraying material having a low volume resistivity and excellent corrosion resistance is used, and the dielectric layer is formed by a thermal spraying method. Is conceivable. However, the current situation is that no thermal spraying material that can realize this has been found.
  • Another method is to form a ceramic sprayed coating using a thermal spraying material that is inferior in corrosion resistance but has a low volume resistivity, and then perform a sealing treatment using a sealing treatment agent having high corrosion resistance. Can also be considered. With this method, it can be expected that a dielectric layer having high corrosion resistance can be formed without significantly changing the electrical characteristics of the electrostatic adsorption surface.
  • the present inventors have made diligent studies to solve the above problems, and by using a new sealing component, a layer having a low volume resistivity and a high corrosion resistance is provided as a dielectric layer constituting the electrostatic adsorption surface. We have found that we can provide a Johnson-Labeck force type electrostatic chuck, and completed the present invention.
  • the electrostatic chuck of the present invention comprises a metal substrate, an electrostatic adsorption electrode provided on the metal substrate via an insulating layer, and a dielectric constituting an electrostatic adsorption surface in contact with an object to be processed.
  • the dielectric layer contains a ceramic sprayed coating and a sealing component filled in the pores of the ceramic sprayed coating.
  • the sealing component contains a metal organic acid salt containing a rare earth element.
  • the electrostatic chuck includes a dielectric layer containing a ceramic sprayed coating and a specific sealing component as a dielectric layer provided with an electrostatic adsorption surface, and the dielectric layer has a low volume resistivity and a high corrosion resistance. Is. Therefore, the electrostatic chuck is a Johnson-Labeck force type electrostatic chuck having excellent corrosion resistance.
  • the electrostatic chuck preferably has a volume resistivity of 1.0 ⁇ 108 to 1.0 ⁇ 10 13 ⁇ ⁇ cm of the ceramic sprayed coating. In this case, as a Johnson-Labeck force type electrostatic chuck, good electrostatic adsorption performance can be exhibited.
  • the ceramic sprayed coating is preferably made of aluminum-titanium oxide. In this case, it is particularly suitable to have a volume resistivity suitable for a Johnson-Labeck force type electrostatic chuck.
  • the rare earth element is preferably yttrium or ytterbium. In these cases, the dielectric layer is particularly suitable for forming a layer having high corrosion resistance.
  • the processing apparatus of the present invention includes the electrostatic chuck according to any one of (1) to (4) above.
  • Examples of the processing device include a plasma processing device and the like.
  • the electrostatic chuck provided in the plasma processing apparatus is excellent in corrosion resistance (plasma resistance).
  • the present invention it is possible to provide a Johnson-Labeck force type electrostatic chuck having an electrostatic adsorption surface having excellent corrosion resistance, and a processing apparatus provided with this electrostatic chuck.
  • FIG. (A) is a diagram schematically showing the evaluation electrostatic chuck manufactured in Test Example 2
  • (b) is a graph showing the cumulative discharge time until cracking.
  • (A) is an observation image of the cut surface of the region A after the exposure test
  • (b) is a diagram showing the distribution of each component in the film of the evaluation electrostatic chuck.
  • FIGS. 9 (c) to 9 (e) are database search results. It is a chromatogram obtained by the GC analysis performed in Test Example 3.
  • FIG. 1 is a vertical sectional view showing a schematic configuration of a plasma processing apparatus according to the present embodiment.
  • the processing device shown in FIG. 1 is a plasma processing device 10.
  • This plasma processing device 10 can be suitably used as, for example, a plasma etching device.
  • the plasma processing apparatus 10 has three main parts. Specifically, it has a plasma forming unit 11, a vacuum container 12, and an exhaust system 13.
  • the plasma forming unit 11 has a microwave source 101, a waveguide 103, and a solenoid coil (static magnetic field generator) 104.
  • the micro wave source 101 is connected to the ground via a power supply, and the load impedance can be adjusted by the adjacent automatic matcher 102 to automatically suppress the reflected wave.
  • the cross section of the waveguide 103 changes from a square shape to a circular shape, and microwaves are transmitted to the cylindrical cavity resonance portion 105.
  • the solenoid coil 104 is arranged so as to cover the upper side and the side surface of the vacuum vessel 12, and the distribution of the static magnetic field can be controlled by changing the current applied to the electromagnet.
  • the vacuum vessel 12 has a dielectric window (microwave introduction window) 111, a shower plate 112, a gas ring (gas introduction section) 113, and a plasma processing chamber 110.
  • a desired reactive gas whose flow rate is controlled by the mass flow controller 141 and the gas supply valve 142 from the gas source 140 passes through the gas ring (gas introduction unit) 113 and the dielectric window (microwave introduction). It is introduced between the window) 111 and the shower plate 112, and is supplied into the plasma processing chamber 110 via the shower plate 112.
  • the shower plate 112 is provided with a large number of holes at positions facing the semiconductor wafer 150 electrostatically adsorbed by the electrostatic chuck 120, and is configured to be able to supply the processing gas from the gas source 140 into the vacuum vessel 12. ing.
  • the shower plate 112 is installed facing the electrostatic chuck 120 at a distance from the electrostatic chuck 120.
  • the vacuum vessel 12 further has an electrostatic chuck 120 below the inside of the plasma processing chamber 110.
  • the electrostatic chuck 120 has a disk shape, and is capable of adsorbing and holding a semiconductor wafer (also simply referred to as a wafer in the present specification) 150 as an object to be processed by static electricity and controlling the temperature of the wafer 150.
  • an RF (Radio Frequency) power supply 121 is connected to the metal base material 201 of the electrostatic chuck 120 via a matching unit 122 so that the electrostatic chuck 120 can apply RF to the wafer 150. It is configured in.
  • the exhaust system 13 has a movable valve 130 and a TMP (Turbomolecular pump) 131.
  • the gas in the plasma processing chamber 110 is exhausted from the TMP 131.
  • the movable valve 130 provided in the upstream portion of the TMP controls the exhaust speed of the exhausted gas, thereby controlling the pressure in the plasma processing chamber 110.
  • FIG. 2 is a vertical cross-sectional view of the electrostatic chuck included in the plasma processing apparatus 10 of FIG.
  • the electrostatic chuck 120 includes a metal base material 201 made of metal, an insulating layer 202 arranged on the upper surface of the metal base material 201, and a chuck electrode (electrostatic adsorption electrode) arranged on the insulating layer 202. ) 205 and a dielectric layer 206 provided so as to cover the chuck electrode 205.
  • the insulating layer 202 is provided with a heater (heater layer) 203 inside.
  • the heater 203 is energized and heated by a DC power supply for a heater (not shown).
  • the dielectric layer 206 has an electrostatic adsorption surface 207 in contact with the wafer 150.
  • the dielectric layer 206 is provided so as to cover the upper surface and the side surface of the electrostatic chuck 120, and also has a function as a protective layer of the electrostatic chuck 120.
  • flow paths (refrigerant grooves) 204 are arranged concentrically or spirally.
  • a refrigerant whose temperature and flow rate (flow velocity) are adjusted by a temperature control unit (not shown) is introduced into the flow path 204.
  • a heat transfer gas flow path (not shown) is provided between the dielectric layer 206 of the electrostatic chuck 120 and the back surface of the wafer 150.
  • This heat transfer gas flow path is composed of a groove provided on the surface of the dielectric layer 206 and a semiconductor wafer, and this groove functions as a gas flow path.
  • a gas having heat transferability such as He is supplied from the heat transfer gas supply source to the heat transfer gas flow path.
  • the electrostatic chuck 120 generates a Johnson-Labeck force by applying a DC voltage (chuck voltage) to the chuck electrode 205 using a DC power supply (not shown), and electrostatically attracts the semiconductor wafer 150 to the electrostatic chuck 120. It can be attracted and held on the surface 207.
  • a DC voltage chuck voltage
  • DC power supply not shown
  • the metal base material 201 is made of, for example, titanium, aluminum, molybdenum, tungsten, an alloy containing at least one of these, and the like. When a metal base material made of aluminum is used, for example, the surface may be anodized.
  • the insulating layer 202 is made of, for example, aluminum oxide (Al 2 O 3 ) or the like.
  • the insulating layer 202 is, for example, a thermal spray coating formed by thermal spraying.
  • the insulating layer 202 may be composed of one layer of thermal spray coating or may be composed of two or more thermal spray coatings.
  • the dielectric layer 206 contains a ceramic sprayed coating and a pore-sealing component filled in the pores of the ceramic sprayed coating.
  • the sealing component prevents moisture in the atmosphere and reaction products generated during the etching process from infiltrating into the pores in the sprayed coating and the microcracks generated during the surface polishing process.
  • a sealing agent is applied to the surface of the ceramic sprayed coating, impregnated for a certain period of time, and then heat-treated to be contained in the sealing agent. This is done by volatilizing the solvent component of.
  • the ceramic sprayed coating constituting the dielectric layer 206 is, for example, a coating made of aluminum-titanium oxide. It is more preferable that the aluminum-titanium oxide contains 2.0 to 12.0 wt% of titanium oxide and the balance is aluminum oxide.
  • the dielectric layer 206 may be composed of one layer of thermal spray coating or may be composed of two or more thermal spray coatings.
  • the thickness of the insulating layer 202 is, for example, about 200 to 500 ⁇ m.
  • the thickness of the dielectric layer 206 is, for example, about 100 to 500 ⁇ m.
  • the volume resistivity of the ceramic sprayed coating constituting the dielectric layer 206 is preferably 1.0 ⁇ 108 to 1.0 ⁇ 10 13 ⁇ ⁇ cm. This range is the volume resistivity suitable for electrostatically adsorbing the object to be processed by the Johnson-Labeck force. If the volume resistivity is less than 1.0 ⁇ 108 ⁇ ⁇ cm, the amount of current flowing through the dielectric layer 206 becomes too large, and it is difficult to exhibit the electrostatic adsorption performance by the Johnson-Labeck force. Further, when the volume resistivity exceeds 1.0 ⁇ 10 13 ⁇ ⁇ cm, the amount of current flowing through the dielectric layer 206 becomes too small, and it is difficult to exhibit the electrostatic adsorption performance by the Johnson-Labeck force.
  • the above-mentioned ceramic spray film containing 2.0 to 12.0 wt% of titanium oxide and the balance being aluminum oxide has a volume resistivity of 1.0 ⁇ 10 8 ⁇ ⁇ cm to 1.0 ⁇ 10 11 ⁇ . -Because it is cm, it is suitable as a dielectric layer 206 of a Johnson-Labeck force type electrostatic chuck.
  • the sealing component contains a metal organic acid salt containing a rare earth element.
  • a solidified product containing the metal organic acid salt and the resin is preferable.
  • the resin acts as a binder for retaining the metal organic acid salt.
  • Such a solidified product has excellent environmental barrier properties and prevents the cleaning liquid and corrosive gas from entering the inside of the ceramic sprayed coating.
  • the solidified product contains a metal organic acid salt containing a rare earth element, and the rare earth element is oxidized by the influence of oxygen plasma or the like when the plasma processing apparatus is used to form a rare earth oxide (itria or the like). Therefore, it is not easily deteriorated by plasma, and a good sealing state can be maintained for a long period of time. As a result, corrosion of the chuck electrode 205, the metal base material 201, etc. is suppressed, and the corrosion resistance is excellent.
  • the sealing component is preferably a solidified product containing a resin from the viewpoint of improving the environmental barrier property and corrosion resistance of the dielectric layer 206.
  • the resin may be either a natural resin or a synthetic resin.
  • the terpenoid is preferable as the natural resin.
  • rosin containing a diterpene-based carboxylic acid such as abietic acid or pimaric acid as a main component is preferable. The reason is that the hydroxyl group contained in the diterpene-based carboxylic acid has a high affinity with oxide ceramics, improves the adhesion between the thermal sprayed coating of the ceramics and the sealing component, and has excellent environmental barrier properties.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
PCT/JP2020/048578 2020-12-24 2020-12-24 静電チャック及び処理装置 Ceased WO2022137467A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020227008008A KR102626584B1 (ko) 2020-12-24 2020-12-24 정전 척 및 처리 장치
CN202080063677.3A CN114981949B (zh) 2020-12-24 2020-12-24 静电吸盘及处理装置
JP2022513924A JP7234459B2 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置
US17/642,083 US11955360B2 (en) 2020-12-24 2020-12-24 Electrostatic chuck and processing apparatus
PCT/JP2020/048578 WO2022137467A1 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置
TW110147038A TWI782819B (zh) 2020-12-24 2021-12-15 靜電吸盤及處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/048578 WO2022137467A1 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置

Publications (1)

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WO2022137467A1 true WO2022137467A1 (ja) 2022-06-30

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PCT/JP2020/048578 Ceased WO2022137467A1 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置

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US (1) US11955360B2 (https=)
JP (1) JP7234459B2 (https=)
KR (1) KR102626584B1 (https=)
CN (1) CN114981949B (https=)
TW (1) TWI782819B (https=)
WO (1) WO2022137467A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP2024047205A (ja) * 2022-09-26 2024-04-05 株式会社ディスコ 保持テーブル
JP2025181356A (ja) * 2024-05-31 2025-12-11 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06737A (ja) * 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH08274151A (ja) * 1995-01-12 1996-10-18 Applied Materials Inc ポリマー含浸静電チャックおよび製造方法
JPH0969554A (ja) * 1995-08-31 1997-03-11 Tocalo Co Ltd 静電チャック部材およびその製造方法
JP2002083861A (ja) * 2000-09-06 2002-03-22 Taiheiyo Cement Corp 真空処理装置用部材および静電チャック
JP2004055909A (ja) * 2002-07-22 2004-02-19 Tokyo Electron Ltd 静電チャックおよび処理装置

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JP2000252351A (ja) * 1999-02-26 2000-09-14 Taiheiyo Cement Corp 静電チャックおよびその製造方法
JP2003045952A (ja) * 2001-05-25 2003-02-14 Tokyo Electron Ltd 載置装置及びその製造方法並びにプラズマ処理装置
JP4503270B2 (ja) 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
KR100772740B1 (ko) * 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
JP4486372B2 (ja) 2003-02-07 2010-06-23 東京エレクトロン株式会社 プラズマ処理装置
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
TW201100578A (en) * 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
US10389278B2 (en) * 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US20180337026A1 (en) * 2017-05-19 2018-11-22 Applied Materials, Inc. Erosion resistant atomic layer deposition coatings
US11014853B2 (en) * 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH06737A (ja) * 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH08274151A (ja) * 1995-01-12 1996-10-18 Applied Materials Inc ポリマー含浸静電チャックおよび製造方法
JPH0969554A (ja) * 1995-08-31 1997-03-11 Tocalo Co Ltd 静電チャック部材およびその製造方法
JP2002083861A (ja) * 2000-09-06 2002-03-22 Taiheiyo Cement Corp 真空処理装置用部材および静電チャック
JP2004055909A (ja) * 2002-07-22 2004-02-19 Tokyo Electron Ltd 静電チャックおよび処理装置

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Publication number Publication date
CN114981949B (zh) 2025-10-03
US11955360B2 (en) 2024-04-09
US20230154780A1 (en) 2023-05-18
KR102626584B1 (ko) 2024-01-18
JP7234459B2 (ja) 2023-03-07
CN114981949A (zh) 2022-08-30
TW202225426A (zh) 2022-07-01
KR20220093089A (ko) 2022-07-05
JPWO2022137467A1 (https=) 2022-06-30
TWI782819B (zh) 2022-11-01

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