JP7234459B2 - 静電チャック及び処理装置 - Google Patents

静電チャック及び処理装置 Download PDF

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Publication number
JP7234459B2
JP7234459B2 JP2022513924A JP2022513924A JP7234459B2 JP 7234459 B2 JP7234459 B2 JP 7234459B2 JP 2022513924 A JP2022513924 A JP 2022513924A JP 2022513924 A JP2022513924 A JP 2022513924A JP 7234459 B2 JP7234459 B2 JP 7234459B2
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JP
Japan
Prior art keywords
electrostatic chuck
spray coating
ceramic
dielectric layer
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022513924A
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English (en)
Japanese (ja)
Other versions
JPWO2022137467A1 (https=
JPWO2022137467A5 (https=
Inventor
剛 高畠
智博 中筋
亮 伊藤
健太郎 瀬戸
豊 大本
裕穂 北田
一海 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tocalo Co Ltd
Hitachi High Tech Corp
Original Assignee
Tocalo Co Ltd
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tocalo Co Ltd, Hitachi High Tech Corp filed Critical Tocalo Co Ltd
Publication of JPWO2022137467A1 publication Critical patent/JPWO2022137467A1/ja
Publication of JPWO2022137467A5 publication Critical patent/JPWO2022137467A5/ja
Application granted granted Critical
Publication of JP7234459B2 publication Critical patent/JP7234459B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
JP2022513924A 2020-12-24 2020-12-24 静電チャック及び処理装置 Active JP7234459B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/048578 WO2022137467A1 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置

Publications (3)

Publication Number Publication Date
JPWO2022137467A1 JPWO2022137467A1 (https=) 2022-06-30
JPWO2022137467A5 JPWO2022137467A5 (https=) 2022-12-05
JP7234459B2 true JP7234459B2 (ja) 2023-03-07

Family

ID=82157640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022513924A Active JP7234459B2 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置

Country Status (6)

Country Link
US (1) US11955360B2 (https=)
JP (1) JP7234459B2 (https=)
KR (1) KR102626584B1 (https=)
CN (1) CN114981949B (https=)
TW (1) TWI782819B (https=)
WO (1) WO2022137467A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025249256A1 (ja) * 2024-05-31 2025-12-04 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024047205A (ja) * 2022-09-26 2024-04-05 株式会社ディスコ 保持テーブル

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002083861A (ja) 2000-09-06 2002-03-22 Taiheiyo Cement Corp 真空処理装置用部材および静電チャック
JP2004055909A (ja) 2002-07-22 2004-02-19 Tokyo Electron Ltd 静電チャックおよび処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
JP2000252351A (ja) * 1999-02-26 2000-09-14 Taiheiyo Cement Corp 静電チャックおよびその製造方法
JP2003045952A (ja) * 2001-05-25 2003-02-14 Tokyo Electron Ltd 載置装置及びその製造方法並びにプラズマ処理装置
JP4503270B2 (ja) 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
KR100772740B1 (ko) * 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
JP4486372B2 (ja) 2003-02-07 2010-06-23 東京エレクトロン株式会社 プラズマ処理装置
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
TW201100578A (en) * 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
US10389278B2 (en) * 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US20180337026A1 (en) * 2017-05-19 2018-11-22 Applied Materials, Inc. Erosion resistant atomic layer deposition coatings
US11014853B2 (en) * 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
JP7147675B2 (ja) * 2018-05-18 2022-10-05 信越化学工業株式会社 溶射材料、及び溶射部材の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002083861A (ja) 2000-09-06 2002-03-22 Taiheiyo Cement Corp 真空処理装置用部材および静電チャック
JP2004055909A (ja) 2002-07-22 2004-02-19 Tokyo Electron Ltd 静電チャックおよび処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025249256A1 (ja) * 2024-05-31 2025-12-04 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
CN114981949B (zh) 2025-10-03
US11955360B2 (en) 2024-04-09
US20230154780A1 (en) 2023-05-18
KR102626584B1 (ko) 2024-01-18
WO2022137467A1 (ja) 2022-06-30
CN114981949A (zh) 2022-08-30
TW202225426A (zh) 2022-07-01
KR20220093089A (ko) 2022-07-05
JPWO2022137467A1 (https=) 2022-06-30
TWI782819B (zh) 2022-11-01

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