CN114981949B - 静电吸盘及处理装置 - Google Patents

静电吸盘及处理装置

Info

Publication number
CN114981949B
CN114981949B CN202080063677.3A CN202080063677A CN114981949B CN 114981949 B CN114981949 B CN 114981949B CN 202080063677 A CN202080063677 A CN 202080063677A CN 114981949 B CN114981949 B CN 114981949B
Authority
CN
China
Prior art keywords
electrostatic chuck
dielectric layer
ceramic
electrostatic
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080063677.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN114981949A (zh
Inventor
高畠刚
中筋智博
伊藤亮
瀬户健太郎
大本豊
北田裕穗
田中一海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Donghualong Co ltd
Hitachi Ltd
Original Assignee
Donghualong Co ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Donghualong Co ltd, Hitachi Ltd filed Critical Donghualong Co ltd
Publication of CN114981949A publication Critical patent/CN114981949A/zh
Application granted granted Critical
Publication of CN114981949B publication Critical patent/CN114981949B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
CN202080063677.3A 2020-12-24 2020-12-24 静电吸盘及处理装置 Active CN114981949B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/048578 WO2022137467A1 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置

Publications (2)

Publication Number Publication Date
CN114981949A CN114981949A (zh) 2022-08-30
CN114981949B true CN114981949B (zh) 2025-10-03

Family

ID=82157640

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080063677.3A Active CN114981949B (zh) 2020-12-24 2020-12-24 静电吸盘及处理装置

Country Status (6)

Country Link
US (1) US11955360B2 (https=)
JP (1) JP7234459B2 (https=)
KR (1) KR102626584B1 (https=)
CN (1) CN114981949B (https=)
TW (1) TWI782819B (https=)
WO (1) WO2022137467A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024047205A (ja) * 2022-09-26 2024-04-05 株式会社ディスコ 保持テーブル
JP2025181356A (ja) * 2024-05-31 2025-12-11 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252351A (ja) * 1999-02-26 2000-09-14 Taiheiyo Cement Corp 静電チャックおよびその製造方法
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
JP4523134B2 (ja) * 2000-09-06 2010-08-11 太平洋セメント株式会社 真空処理装置用部材および静電チャック
JP2003045952A (ja) * 2001-05-25 2003-02-14 Tokyo Electron Ltd 載置装置及びその製造方法並びにプラズマ処理装置
JP2004055909A (ja) * 2002-07-22 2004-02-19 Tokyo Electron Ltd 静電チャックおよび処理装置
JP4503270B2 (ja) 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
KR100772740B1 (ko) * 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
JP4486372B2 (ja) 2003-02-07 2010-06-23 東京エレクトロン株式会社 プラズマ処理装置
TW201100578A (en) * 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
US10389278B2 (en) * 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US20180337026A1 (en) * 2017-05-19 2018-11-22 Applied Materials, Inc. Erosion resistant atomic layer deposition coatings
US11014853B2 (en) * 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
JP7147675B2 (ja) * 2018-05-18 2022-10-05 信越化学工業株式会社 溶射材料、及び溶射部材の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252351A (ja) * 1999-02-26 2000-09-14 Taiheiyo Cement Corp 静電チャックおよびその製造方法
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック

Also Published As

Publication number Publication date
US11955360B2 (en) 2024-04-09
US20230154780A1 (en) 2023-05-18
KR102626584B1 (ko) 2024-01-18
WO2022137467A1 (ja) 2022-06-30
JP7234459B2 (ja) 2023-03-07
CN114981949A (zh) 2022-08-30
TW202225426A (zh) 2022-07-01
KR20220093089A (ko) 2022-07-05
JPWO2022137467A1 (https=) 2022-06-30
TWI782819B (zh) 2022-11-01

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