KR102626584B1 - 정전 척 및 처리 장치 - Google Patents

정전 척 및 처리 장치 Download PDF

Info

Publication number
KR102626584B1
KR102626584B1 KR1020227008008A KR20227008008A KR102626584B1 KR 102626584 B1 KR102626584 B1 KR 102626584B1 KR 1020227008008 A KR1020227008008 A KR 1020227008008A KR 20227008008 A KR20227008008 A KR 20227008008A KR 102626584 B1 KR102626584 B1 KR 102626584B1
Authority
KR
South Korea
Prior art keywords
electrostatic chuck
thermal spray
spray coating
dielectric layer
ceramic thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227008008A
Other languages
English (en)
Korean (ko)
Other versions
KR20220093089A (ko
Inventor
타케시 타카바타케
토모히로 나카스지
아키라 이토
켄타로 세토
유타카 오모토
히로호 키타다
카즈우미 타나카
Original Assignee
도카로 가부시키가이샤
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도카로 가부시키가이샤, 주식회사 히타치하이테크 filed Critical 도카로 가부시키가이샤
Publication of KR20220093089A publication Critical patent/KR20220093089A/ko
Application granted granted Critical
Publication of KR102626584B1 publication Critical patent/KR102626584B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/68757—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
KR1020227008008A 2020-12-24 2020-12-24 정전 척 및 처리 장치 Active KR102626584B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/048578 WO2022137467A1 (ja) 2020-12-24 2020-12-24 静電チャック及び処理装置

Publications (2)

Publication Number Publication Date
KR20220093089A KR20220093089A (ko) 2022-07-05
KR102626584B1 true KR102626584B1 (ko) 2024-01-18

Family

ID=82157640

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227008008A Active KR102626584B1 (ko) 2020-12-24 2020-12-24 정전 척 및 처리 장치

Country Status (6)

Country Link
US (1) US11955360B2 (https=)
JP (1) JP7234459B2 (https=)
KR (1) KR102626584B1 (https=)
CN (1) CN114981949B (https=)
TW (1) TWI782819B (https=)
WO (1) WO2022137467A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024047205A (ja) * 2022-09-26 2024-04-05 株式会社ディスコ 保持テーブル
JP2025181356A (ja) * 2024-05-31 2025-12-11 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045952A (ja) 2001-05-25 2003-02-14 Tokyo Electron Ltd 載置装置及びその製造方法並びにプラズマ処理装置
JP2004190136A (ja) 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
JP2004260159A (ja) 2003-02-07 2004-09-16 Tokyo Electron Ltd プラズマ処理装置、リング部材およびプラズマ処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
JP2000252351A (ja) * 1999-02-26 2000-09-14 Taiheiyo Cement Corp 静電チャックおよびその製造方法
JP4523134B2 (ja) * 2000-09-06 2010-08-11 太平洋セメント株式会社 真空処理装置用部材および静電チャック
JP2004055909A (ja) * 2002-07-22 2004-02-19 Tokyo Electron Ltd 静電チャックおよび処理装置
KR100772740B1 (ko) * 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
TW201100578A (en) * 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
US10389278B2 (en) * 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US20180337026A1 (en) * 2017-05-19 2018-11-22 Applied Materials, Inc. Erosion resistant atomic layer deposition coatings
US11014853B2 (en) * 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
JP7147675B2 (ja) * 2018-05-18 2022-10-05 信越化学工業株式会社 溶射材料、及び溶射部材の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045952A (ja) 2001-05-25 2003-02-14 Tokyo Electron Ltd 載置装置及びその製造方法並びにプラズマ処理装置
JP2004190136A (ja) 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
JP2004260159A (ja) 2003-02-07 2004-09-16 Tokyo Electron Ltd プラズマ処理装置、リング部材およびプラズマ処理方法

Also Published As

Publication number Publication date
CN114981949B (zh) 2025-10-03
US11955360B2 (en) 2024-04-09
US20230154780A1 (en) 2023-05-18
WO2022137467A1 (ja) 2022-06-30
JP7234459B2 (ja) 2023-03-07
CN114981949A (zh) 2022-08-30
TW202225426A (zh) 2022-07-01
KR20220093089A (ko) 2022-07-05
JPWO2022137467A1 (https=) 2022-06-30
TWI782819B (zh) 2022-11-01

Similar Documents

Publication Publication Date Title
KR101757793B1 (ko) 유전체 재료 및 정전 척 장치
KR101482504B1 (ko) 플라즈마 챔버 재료로서의 산화이트륨의 수명 연장
TWI373798B (https=)
KR102626584B1 (ko) 정전 척 및 처리 장치
CN101510501B (zh) 基板处理装置用的部件以及皮膜形成方法
KR20190089824A (ko) 기판 탑재대 및 기판 처리 장치
KR20170022902A (ko) Icp 플라즈마들에서 유전체 윈도우를 재컨디셔닝하도록 전력공급된 정전 패러데이 차폐의 인가
KR101835435B1 (ko) 플라즈마 처리 장치
KR20070037516A (ko) 기판 테이블, 그 제조 방법 및 플라즈마 처리 장치
JP2004190136A (ja) プラズマ処理容器内部材
US20150243541A1 (en) Electrostatic chuck, placing table, plasma processing apparatus, and method of manufacturing electrostatic chuck
US10774006B2 (en) Microwave and induction heat treatment of ceramic coatings
KR102066271B1 (ko) 정전척 실링방법
JP4181069B2 (ja) プラズマ処理装置
KR102155512B1 (ko) 반도체 제조용 정전척의 아킹 현상 개선방법
KR102734340B1 (ko) 내벽 부재의 재생 방법
WO2024075459A1 (ja) 積層構造体および積層構造体の製造方法
KR102751920B1 (ko) 기판 적재대의 연마 방법 및 기판 처리 장치
JP5298430B2 (ja) 半導体加熱装置
JP2016225579A (ja) プラズマ処理装置およびプラズマ処理方法
KR20260040463A (ko) 수소 및 nh3 플라즈마 적용을 위한 보호 세라믹 코팅들을 갖는 프로세스 키트
US20260055496A1 (en) Substrate coating for high voltage applications
JP6067210B2 (ja) プラズマ処理装置
WO2020252020A1 (en) Sealant coating for plasma processing chamber components
JP6174210B2 (ja) 載置台およびプラズマ処理装置

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000