WO2021210052A1 - 計測装置、露光装置、および計測方法 - Google Patents

計測装置、露光装置、および計測方法 Download PDF

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Publication number
WO2021210052A1
WO2021210052A1 PCT/JP2020/016332 JP2020016332W WO2021210052A1 WO 2021210052 A1 WO2021210052 A1 WO 2021210052A1 JP 2020016332 W JP2020016332 W JP 2020016332W WO 2021210052 A1 WO2021210052 A1 WO 2021210052A1
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WO
WIPO (PCT)
Prior art keywords
light
diffracted light
measuring device
measured
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/016332
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English (en)
French (fr)
Japanese (ja)
Inventor
道雄 大橋
▲高▼橋　聡
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Nikon Corp
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Nikon Corp
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Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to EP20931549.8A priority Critical patent/EP4137776A4/en
Priority to JP2022514887A priority patent/JP7468630B2/ja
Priority to PCT/JP2020/016332 priority patent/WO2021210052A1/ja
Priority to KR1020227035084A priority patent/KR20220166806A/ko
Priority to CN202080099368.1A priority patent/CN115443399A/zh
Priority to US17/917,584 priority patent/US12345517B2/en
Priority to TW110112863A priority patent/TWI890772B/zh
Publication of WO2021210052A1 publication Critical patent/WO2021210052A1/ja
Anticipated expiration legal-status Critical
Priority to JP2024059315A priority patent/JP2024095727A/ja
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2518—Projection by scanning of the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Definitions

  • the present invention relates to a measuring device, an exposure device, and a measuring method.
  • the position of an existing pattern formed in advance on the photosensitive substrate is measured prior to the exposure of the light-dark pattern, and the position is aligned with the existing pattern to make the photosensitive substrate photosensitive.
  • the light and dark patterns are exposed on the substrate.
  • a method of measuring the position of the existing pattern by imaging an image of an alignment mark in the existing pattern with a position measurement optical system is used (see Patent Document 1).
  • the measuring device includes an illumination system that irradiates an object to be measured located on an object surface with light, an imaging system that forms a conjugate surface that is optically conjugate to the object surface, and the above.
  • Diffraction light that limits at least a part of the plurality of diffracted lights from the object to be measured and passes the first diffracted light and the second diffracted light different from the first diffracted light among the plurality of diffracted lights. It includes a limiting unit and an imaging unit that is arranged on the conjugate surface and images a periodic light-dark pattern formed by the first diffracted light and the second diffracted light.
  • the measuring device forms an imaging system that irradiates an object to be measured located on an object surface with light having a plurality of wavelengths and a conjugate surface that is optically conjugate with the object surface.
  • the diffracted light passing portion for passing the first diffracted light and the second diffracted light different from the first diffracted light is arranged on the conjugate surface. It includes an imaging unit that captures a light-dark pattern formed by the light having a plurality of wavelengths that has passed through the diffracted light passing unit.
  • the exposure apparatus includes the measuring apparatus of the first or second aspect and an exposure optical system that irradiates an object including the object to be measured with exposure light.
  • the exposure apparatus uses the measuring apparatus of the first or second aspect to measure the position of the mark having a periodic structure.
  • FIG. 2 (a) and 2 (b) are diagrams showing an example of a position measurement mark suitable for the measuring device of the first embodiment.
  • FIG. 2 (c) is a diagram showing an image of the mark of FIG. 2 (a) formed on the imaging surface of the imaging unit of the measuring device.
  • FIG. 4A is a diagram showing an example of a lighting aperture changing portion in the lighting system.
  • FIG. 4B is a diagram showing an example of a diffracted light limiting unit.
  • FIG. 6A is a diagram showing an example of the size of the transmission aperture provided in the illumination aperture changing portion.
  • FIG. 6B is a diagram showing an example of the size of the selective opening provided in the diffracted light limiting portion.
  • FIG. 7A is a diagram showing an example of an illumination aperture diaphragm according to a modification of the measuring device 1.
  • FIG. 7B is a diagram showing an example of a diffracted light limiting diaphragm according to a modification of the measuring device 1.
  • the figure which shows a part of the structure of the modification 2 of the measuring apparatus schematicly.
  • the term "optically conjugated" means that one surface and the other surface are in an imaging relationship via an optical system.
  • the X, Y, and Z directions indicated by arrows in the figures referred to below are orthogonal to each other, and the X, Y, and Z directions each indicate the same direction in each figure.
  • the directions indicated by the arrows are referred to as + X direction, + Y direction, and + Z direction, respectively.
  • the position in the X direction is referred to as the X position
  • the position in the Y direction is referred to as the Y position
  • the position in the Z direction is referred to as the Z position.
  • FIG. 1 is a diagram schematically showing the configuration of the measuring device 1 of the first embodiment.
  • the object W to be measured is placed so that the surface WS, which is the surface WS on the + Z side of the object W to be measured such as a silicon wafer to be measured, substantially coincides with the object surface OP of the imaging system 10. ..
  • the sample table 70 is movably supported in the X and Y directions by the guide 71, and the object W to be measured is also movable in the X and Y directions. It is measured by the encoder 61 via the position of the scale plate 72 provided on the sample table 70, and is transmitted to the control unit 60 as a position signal S2.
  • the imaging system 10 has an objective lens 11, a first relay lens 12, a second relay lens 13, and a third relay lens 14, and forms a conjugate surface CP that is optically conjugate to the object surface OP.
  • An imaging unit 19 such as a CMOS image sensor is arranged on the conjugated surface CP so that the imaging surface 19s coincides with the conjugated surface CP.
  • a measurement mark WM to be measured is formed on the surface WS of the object W to be measured, and the imaging system 10 captures an image of the object W to be measured including the measurement mark WM on the imaging surface 19s of the imaging unit 19. Image is formed on.
  • an intermediate image of the object W to be measured is also formed between the first relay lens 12 and the second relay lens 13, that is, between the object surface OP and the conjugate surface CP on which the object W to be measured is arranged. It has an intermediate image plane MP to be formed.
  • An index plate 15 made of a transparent substrate is provided on the intermediate image plane MP, and a position index 16 is provided on a part of the index plate 15.
  • the position index 16 is, for example, a rectangular light-shielding film periodically arranged on the index plate 15.
  • Position indicators 16 in which light-shielding films are periodically arranged in the X direction are arranged on both sides of the optical path of the imaging system 10 in the X direction, and light-shielding films are periodically arranged in the Y direction on both sides in the Y direction.
  • the position index 16 arranged in is arranged.
  • the position index 16 is illuminated by light from an index illumination system (not shown) provided in the imaging system 10, and the image of the position index 16 is imaged by the conjugate surface CP by the second relay lens 13 and the third relay lens 14. Is formed in.
  • the imaging unit 19 captures an image of the position index 16 as well as an image of the measurement mark WM formed on the conjugated surface CP.
  • the illumination system 20 includes relay lenses 21, 22, 24, an illumination aperture changing portion 40, a mirror 23, a branch mirror 25, and an objective lens 11, and an illumination light IL supplied from a light source portion 50 is arranged on an object surface OP.
  • the surface WS of the object to be measured W including the measurement mark WM is irradiated.
  • the objective lens 11 is included in both the imaging system 10 and the illumination system 20.
  • the illumination light IL supplied from the light source unit 50 passes through the relay lens 21 constituting the illumination system 20, and the numerical aperture is defined by the illumination aperture aperture 41a included in the illumination aperture changing unit 40.
  • the details of the illumination aperture changing unit 40 will be described later.
  • the illumination light IL that has passed through the illumination aperture changing portion 40 passes through the relay lens 21, the mirror 23, and the relay lens 24, and then reaches the branch mirror 25.
  • the branch mirror 25 is a mirror that reflects light in a part of the plane and transmits light in another part, for example, a mirror in which a reflective film is formed on a part of a transparent plate.
  • the illumination light transmitted through the relay lens 24 is reflected by the branch mirror 25 and is transmitted through the objective lens 11 to irradiate the object W including the measurement mark WM.
  • each lens such as the objective lens 11 is shown in FIG. 1 so as to be composed of only one lens, each lens may be composed of a plurality of lenses.
  • FIG. 2A shows an example of a measurement mark WM formed on the surface WS of the object to be measured W, which is suitable for measuring the position in the X direction, as viewed from the + Z direction.
  • FIG. 2B shows a cross-sectional view of the measurement mark WM shown in FIG. 2A as viewed from the ⁇ Y direction.
  • An example of a measurement mark suitable for measuring the position in the Y direction is a measurement mark WM rotated by 90 ° in the XY plane.
  • the measurement mark WM is, for example, a mark in which concave portions MB and convex portions MT having steps are alternately and periodically formed in the X direction on the surface WS of the object to be measured W.
  • One recess MB is a rectangle whose sides are parallel to the X or Y direction and is long in the Y direction, and a plurality of recesses MB are periodically formed in the X direction with a periodic PX. Therefore, the measurement mark WM functions as a reflection type diffraction grating having a periodic structure in the X direction.
  • the number of recessed MBs periodically arranged in the X direction may be any number of two or more.
  • the surface WS of the object to be measured W including the measurement mark WM is covered with a translucent or semipermeable membrane RS containing a photoresist or the like.
  • the width of the concave portion MB and the convex portion MT in the X direction is about 1 to 3 ⁇ m as an example, and the period PX of the arrangement in the X direction is about 2 to 4 ⁇ m as an example.
  • the measurement mark WM is designed to be formed at a predetermined position on the object to be measured W.
  • the actual position of the measurement mark WM is different from the design position because the object W to be measured such as a silicon wafer undergoes isotropic or isotropic deformation due to the semiconductor process or the like.
  • the control unit 60 first transmits the control signal S3 based on the position signal S2 from the encoder 61 to move the sample table 70, and sets the design position of the measurement mark WM on the imaging system 10. Match the measurement reference position.
  • the illumination light IL is applied to the object W to be measured, and due to the periodic structure of the measurement mark WM in the X direction, as shown in FIG.
  • a plurality of diffracted lights such as the second-order diffracted light Dp2 and the second-order diffracted light Dm2 are generated.
  • the generated diffracted light enters the objective lens 11 and is guided to the branch mirror 25.
  • the plurality of diffracted lights (Dm2, Dm1, Dp1, Dp2) pass through the branch mirror 25 and reach the so-called pupil surface in the imaging system 10 or the diffracted light limiting diaphragm 31a provided in the vicinity thereof. Therefore, the diffracted lights of different orders generated at different diffraction angles from the measurement mark WM arranged on the object surface OP are collected at different positions in the diffracted light limiting diaphragm 31a.
  • the 0th-order diffracted light which is specularly reflected light from the measurement mark WM, is blocked by the branch mirror 25 and therefore does not reach the diffracted light limiting diaphragm 31a.
  • the diffracted light limiting aperture 31a is provided with a selection opening 35a at a position where diffracted light of a predetermined order is collected in an attenuation region for attenuating light, and allows diffracted light of a predetermined order to pass through to another order. Amplifies the diffracted light of. Here, the diffracted light of another order may be shielded. Further, the light transmittance (light transmittance) of the selective opening 35a does not have to be 100%. The light transmittance of the selection opening 35a may be higher than the light transmittance of the attenuation region. In the state shown in FIG.
  • the selective aperture 35a selectively passes the +1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 in the X direction, and the diffracted light of another order (+1st-order diffracted light Dp2 and -2).
  • the next diffracted light (Dm2, etc.) is shielded from light.
  • the details of the diffracted light limiting unit 30 including the diffracted light limiting diaphragm 31a will be described later.
  • the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 selectively passed by the diffracted light limiting diaphragm 31a are focused by the first relay lens 12 and are in the vicinity of the index plate 15 arranged on the intermediate image plane MP.
  • an intermediate image of the measurement mark WM as an interference fringe is formed.
  • the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 are focused by the second relay lens 13 and the third relay lens 14, and form an image of the measurement mark WM as interference fringes on the imaging surface of the imaging unit 19. do.
  • FIG. 2C is a diagram showing an example of the intensity distribution of the image IM of the measurement mark WM formed on the imaging surface 19s.
  • the horizontal axis of the intensity distribution graph shown in FIG. 2C indicates the position in the X direction on the imaging surface 19s, and the vertical axis indicates the intensity of the image IM.
  • the intensity distributions of the images IIL and IIR of the position index 16 on the index plate 15 are shown on the ⁇ X side and the + X side of the image IM of the measurement mark WM.
  • the image IM of the measurement mark WM shown in FIG. 2 (c) has only the imaging magnification (horizontal magnification) of the imaging system 10 with respect to the measurement mark WM shown in FIGS. 2 (a) and 2 (b). It is enlarged in the X direction. However, in the following description, in order to facilitate understanding, it is assumed that the lateral magnification of the imaging system 10 is 1x. It should be noted that the scale in the X direction of FIG. 2 (c) does not match the scale of the X direction of FIGS. 2 (a) and 2 (b).
  • the image IM of the measurement mark WM is an interference fringe formed by the interference of the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 from the measurement mark WM. Therefore, a periodic light-dark pattern in the X direction is formed over one cycle or more, and the light-dark cycle in the X direction is 1/2 of the period PX in the X direction of the measurement mark WM. In addition, this light-dark pattern may be referred to as a light-dark image.
  • the imaging unit 19 images the image IM over an imaging range DA of one cycle or more of light and dark of the image IM of the measurement mark WM along the X direction, and transmits the imaging signal S1 to the control unit 60.
  • the range of the imaging range DA in the X direction may be an integral multiple of 1/2 of the period PX, that is, n ⁇ PX / 2 (n is a natural number).
  • the imaging unit 19 or the control unit 60 may integrate the imaging signal S1 of the image IM in the Y direction within the imaging range DA. Further, as will be described later, when measuring the position of the measurement mark WM or the like in the Y direction, the imaging unit 19 or the control unit 60 integrates the imaging signal S1 of the image IM in the X direction within the imaging range DA. You may.
  • the width of the imaging range DA in the X direction and the width in the Y direction may be variably set by the imaging unit 19 or the control unit 60.
  • By changing the width of the imaging range DA in the X direction and the width in the Y direction it is possible to measure measurement marks WM, WMa, and WMb of various shapes, and the measurement marks WM, WMa, and WMb are arranged around the measurement marks WM, WMa, and WMb. It is possible to reduce the adverse effects of the circuit pattern and the like.
  • the image pickup unit 19 also takes an image of the image IIL and IIR of the position index 16 and transmits the image pickup signal S1 to the control unit 60.
  • the control unit 60 measures the actual position of the measurement mark WM based on the transmitted image pickup signal S1.
  • the measurement mark WM is arranged so that its design position coincides with the measurement reference position of the imaging system 10 during measurement. Therefore, the actual position of the measurement mark WM is measured by measuring the amount of the displacement of the measurement mark WM from the measurement reference position of the imaging system 10 and adding the amount of the displacement to the design position of the measurement mark WM. Can be measured.
  • the measurement reference position of the imaging system 10 is, for example, a position where an image of a measurement mark WM or the like arranged at the measurement reference position is formed between the images IIL and IIR of the two position indexes 16 on the imaging surface 19s. Is.
  • the control unit 60 determines the positions of the images IIL and IIR in the X direction based on the phases of the images IIL and IIR of the two position indexes 16 in the X direction, for example, and the image formation which is an intermediate position between them.
  • the measurement reference position in the X direction of the system 10 is determined.
  • the control unit 60 determines the position of the image IM in the X direction based on, for example, the phase of the image IM of the measurement mark WM in the X direction of the change in brightness, and determines the position of the image IM in the X direction from the measurement reference position in the X direction of the imaging system 10 described above. Calculate the amount of misalignment. Then, the actual X position of the measurement mark WM is calculated (measured) by adding the amount of the displacement to the design X position of the known measurement mark WM.
  • the measurement of the X position of the measurement mark WM has been described, but the measurement of the Y position can be performed in the same manner.
  • the measurement mark WM shown in FIG. 2A on the object W to be measured is rotated by 90 ° in the XY plane to measure the measurement mark WM.
  • an image that changes light and dark periodically along the Y direction is formed on the imaging surface 19s, and the control unit 60 determines the positional relationship between the image and the image of the position index 16 and the design of the measurement mark WM.
  • the actual Y position of the measurement mark WM is calculated (measured) based on the Y position.
  • the control unit 60 measures the amount of misalignment from the measurement reference position of the imaging system 10 at the design position of the measurement mark WM at the time of measurement by the position signal S2 from the encoder 61, and the amount of misalignment. Is further added to calculate (measure) the actual position of the measurement mark WM.
  • FIG. 3 is a diagram showing another example of the measurement mark WM.
  • the measurement mark WMa shown in FIG. 3A corresponds to several recesses MB near the center in the X direction rotated by 90 ° in the XY plane with respect to the measurement mark WM shown in FIG. 2A. doing.
  • the ⁇ X side end portion LX and the + X side end portion RX of the measurement mark WMa have a concave portion MBa and a convex portion MTa extending in the X direction suitable for position measurement in the X direction.
  • the central portion CY in the X direction of the measurement mark WMa has a concave portion MBb and a convex portion MTb extending in the Y direction suitable for position measurement in the Y direction.
  • the measuring device 1 can both measure the position of the measurement mark WMa in the X direction and the position in the Y direction.
  • the period PY of the arrangement of the concave MBb and the convex MTb of the central portion CY in the Y direction is the same as the period PX of the arrangement of the concave MBa and the convex MTa of the -X side end LX and the + X side end RX in the X direction. It may be the same or different.
  • the number of recessed MBa included in the central portion CY and the number of recessed MBs included in the ⁇ X side end portion LX and the + X side end portion RX may be any number of two or more.
  • the measurement mark WMb shown in FIG. 3B is a mark including a concave portion MBc formed in a two-dimensional grid pattern and a convex portion MTc surrounded by the concave portion MBc. Since the two-dimensional lattice formed by the recessed MBc includes both the periodicity in the X direction and the periodicity in the Y direction, the measuring device 1 measures the position of the measurement mark WMb in the X direction and the position in the Y direction. Can be done together.
  • FIG. 3C is a diagram showing an example of one subdivided recessed MB.
  • One recessed MB shown in FIG. 3C is composed of a plurality of micro-concave MBSBs whose inside is subdivided in the X direction and a plurality of micro-convex MBSTs.
  • the inside thereof may be subdivided in the Y direction.
  • the recess MBb suitable for measurement is subdivided in both the X direction and the Y direction
  • the inside thereof may be subdivided in the X direction
  • the Y direction may be subdivided
  • the X direction and the Y direction may be subdivided. It may be subdivided two-dimensionally in the direction.
  • the width of one micro-concave MBb in the X direction (or Y direction) is, for example, about 0.05 to 0.3 ⁇ m, and the width of the plurality of micro-concave MBBs constituting one concave MBB in the X direction (or Y direction).
  • the period of the arrangement in the Y direction) is about 0.1 to 0.5 ⁇ m.
  • one convex MT, MTa, MTb may be a mark subdivided as described above.
  • the measurement marks WM, WMa, and WMb are not limited to the shapes having the above-mentioned steps, and may be marks having a difference in amplitude reflectance between the concave portions MB, MBa, MBb and the convex portions MT, MTa, MTb. Just do it.
  • each measurement is performed when measuring the positions of various measurement marks WM, WMa, and WMb (hereinafter, collectively referred to as “measurement mark WM”) as described above.
  • the position is measured by imaging an image with diffracted light suitable for. Therefore, the measuring device 1 of the first embodiment attenuates at least a part of the plurality of diffracted lights generated from the measurement mark WM, and the first diffracted light (for example, +1st order diffracted light Dp1) and the first diffracted light.
  • a diffracted light limiting unit 30 that allows the second diffracted light (for example, -1st diffracted light Dm1) different from the above to pass through.
  • FIG. 4B is a view of the diffracted light limiting unit 30 as viewed from the + Z direction.
  • the diffracted light limiting unit 30 includes a diffracted light limiting diaphragm 31a to 31d, an imaging diaphragm holding unit 32, and a selection switching unit 33.
  • the image diaphragm holding unit 32 is rotatably held around the rotation center CL2 by the selection switching unit 33.
  • the imaging diaphragm holding unit 32 holds four diffracted light limiting diaphragms 31a to 31d as an example, and inserts one of them into the imaging optical path 10P of the imaging system 10. Selective openings 35a to 35d having different shapes are formed in the diffracted light limiting diaphragms 31a to 31d.
  • the diffracted light limiting unit 30 can select the diffracted light passing through the selection openings 35a to 35d by inserting any of the diffracted light limiting diaphragms 31a to 31d into the imaging optical path 10P.
  • FIG. 4A is a view of the illumination aperture changing portion 40 viewed from the + Z direction.
  • the illumination aperture changing unit 40 includes an illumination aperture diaphragm 41a to 41d, an illumination aperture holding unit 42, and an illumination switching unit 43.
  • the illumination diaphragm holding unit 42 is rotatably held around the rotation center CL1 by the illumination switching unit 43.
  • the illumination diaphragm holding unit 42 holds four illumination aperture diaphragms 41a to 41d as an example, and inserts one of them into the illumination optical path 20P of the illumination system 20.
  • the illumination aperture diaphragms 41a to 41d are provided with transmission openings 45a to 45d having different shapes.
  • the illumination aperture changing unit 40 inserts any of the illumination aperture diaphragms 41a to 41d into the illumination optical path 20P, so that the numerical aperture of the illumination light that passes through the transmission openings 45a to 45d and is applied to the object W to be measured, etc. Lighting conditions can be selected.
  • the numerical aperture of the illumination light is a half-width sine in the incident angle range of the illumination light applied to the object W to be measured.
  • the value obtained by dividing the numerical aperture of the illumination light by the numerical aperture (NA) of the objective lens 11 is a value generally called a coherence factor.
  • the illumination aperture diaphragms 41a to 41d are arranged on or near the so-called pupil surface by the lenses 22, 24, the objective lens 11, and the like with respect to the object surface OP. Therefore, the illumination light transmitted through the respective transmission openings 45a to 45d in the illumination aperture diaphragms 41a to 41d is placed on the measurement mark WM arranged on the object surface OP at an incident angle corresponding to the position of the transmission openings 45a to 45d. Incident.
  • the diffracted light limiting diaphragms 31a to 31d are provided at or near the so-called pupil surface in the imaging system 10. Therefore, the illumination aperture diaphragms 41a to 41d inserted in the illumination optical path 20P and the diffracted light limiting diaphragms 31a to 31d inserted in the imaging optical path 10P are arranged on the lenses 22, 24, the objective lens 11, and the object surface OP. An imaging relationship is formed through the object to be measured W as a reflective surface.
  • the positional relationship between the diffracted light limiting diaphragms 31a to 31d and the illumination aperture diaphragms 41a to 41d in the X and Y directions is reversed by the imaging action of the lenses 22 and 24 in the illumination system 20. Therefore, the X and Y directions of FIG. 4A are inverted with respect to FIG. 4B so that the imaging relationship between the diffracted light limiting diaphragms 31a to 31d and the illumination aperture diaphragms 41a to 41d can be easily understood. (That is, rotated 180 °) and displayed.
  • the illumination aperture changing unit 40 inserts the illumination aperture diaphragm 41a into the illumination optical path 20P, and the diffracted light limiting unit 30
  • the diffracted light limiting diaphragm 31a is inserted into the imaging light path 10P.
  • FIGS. 4 (a) and 4 (b) This state is shown in FIGS. 4 (a) and 4 (b), and the center 41ac of the illumination aperture diaphragm 41a is arranged so as to coincide with the center of the illumination optical path 20P, and the diffracted light limiting diaphragm 31a
  • the center 31ac is arranged so as to coincide with the center of the imaging optical path 10P.
  • the transmission opening 45a provided in the illumination aperture diaphragm 41a has a narrow width in the X direction and a width in the Y direction is wider than the width in the X direction. Therefore, the illumination light IL applied to the measurement mark WM is incident in a narrow incident angle degree range in the X direction and in a wide incident angle degree range in the Y direction.
  • the range of the angle of incidence of the illumination light IL transmitted through the transmission opening 45a on the measurement mark WM in the X direction is 0 or more and 1/3 or less as the above-mentioned coherence factor.
  • a plurality of diffracted lights (Dm2, Dm1, Dp1, Dp2) are generated from the measurement mark WM by the irradiation of the illumination light IL.
  • the selective opening 35a of the diffracted light limiting diaphragm 31a of the diffracted light limiting unit 30 allows the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 to pass through, and blocks the other diffracted light (Dm2, Dp2, etc.).
  • the distance in the X direction from the center 31ac of the diffracted light limiting diaphragm 31a of the two selection openings 35a is such that the selection opening 35a passes the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 from the measurement mark WM.
  • the width of each of the two selection openings 35a in the X direction is set to a width through which the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 from the measurement mark WM can pass.
  • the above relationship regarding the position and width of the diffracted light limiting diaphragm 31a of the selective aperture 35a from the center 31ac is the distance and width from the center 31bc to 31dc of the diffracted light limiting diaphragms 31b to 31d of the other selective apertures 35b to 35d. Is the same.
  • the diffracted light of each order spreads and is distributed in the X direction in the diffracted light limiting diaphragm 31a according to the width of the transmission opening 45a of the illumination aperture diaphragm 41a in the X direction. Therefore, the width of the transmission aperture 45a of the illumination aperture diaphragm 41a in the X direction may be set to such a width that the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 can be separated from the diffracted light of other orders in the diffracted light limiting diaphragm 31a. ..
  • the position of the measurement mark is measured based on an image including not only the +1st order diffracted light Dp1 and the -1st order diffracted light Dm1 but also the diffracted light of other orders. Since the diffracted light of each order passes through different positions in the imaging system, different amounts of wave surface aberrations are received from the imaging system. In this case, for example, when the shape of the measurement mark WM fluctuates and the ratio of the intensity of the diffracted light of each order fluctuates, the image IM of the measurement mark WM is deformed or displaced due to the influence of the wave surface aberration of the imaging system, and the position is changed. An error will occur in the measurement result.
  • the first diffracted light (+1st order diffracted light Dp1 etc.) and the second diffracted light (-1st order diffracted light Dm1 etc.) are selectively selected from a plurality of diffracted lights by the diffracted light limiting aperture 31a. Since the image IM of the measurement mark WM is formed by passing the light through the image IM, it is not easily affected by the wave surface aberration of the imaging system 10, and highly accurate position measurement can be performed.
  • the contrast of the image IM is lowered even if the position of the measurement mark WM fluctuates (defocuses) in the Z direction. It is difficult and the measurement mark WM can be measured at a deep depth of focus.
  • the illumination aperture diaphragm 41c is centered 41cc. It is inserted into the illumination optical path 20P so as to coincide with the center of the illumination optical path 20P. Then, the diffracted light limiting diaphragm 31c is inserted into the imaging optical path 10P so that the center 31cc coincides with the center of the imaging optical path 10P.
  • the illumination aperture diaphragm 41c is provided with a transmission opening 45c having a shape in which the transmission opening 45a provided in the above-mentioned illumination aperture diaphragm 41a is rotated by 90 ° in the XY plane.
  • the diffracted light limiting diaphragm 31c is provided with a selective opening 35c having a shape in which the selective opening 35a provided in the diffracted light limiting diaphragm 31a is rotated by 90 ° in the XY plane.
  • the selective aperture 35c of the diffracted light limiting diaphragm 31c allows the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 from the measurement mark WM suitable for measurement in the Y direction to pass through, and other diffracted light (Dm2, Dp2, etc.). To block light. Therefore, only the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 suitable for detecting the measurement mark WM in the Y direction reach the imaging surface 19s of the imaging unit 19, and form an image IM of the measurement mark WM. ..
  • the illumination aperture diaphragm 41a having a wide transmission opening 45a in the Y direction is used for the measurement in the X direction
  • the illumination aperture diaphragm 41c having the transmission opening 45c wide in the X direction is used for the measurement in the Y direction. Is using.
  • An aperture diaphragm 41b may be used.
  • the amount of illumination light IL can be increased, the S / N of the image IM is improved, and the measurement accuracy can be expected to be improved. ..
  • the above-mentioned measurement in the X direction and the measurement in the Y direction may be performed in sequence.
  • the illumination aperture diaphragm 41b is inserted into the illumination optical path 20P so that the center 41 bc coincides with the center of the illumination optical path 20P, and the diffracted light limiting diaphragm 31b is connected so that the center 31 bc coincides with the center of the imaging optical path 10P.
  • the measurement in the X direction and the Y direction may be performed at the same time while being inserted into the image optical path 10P.
  • a transmission opening 45b having a narrow width in both the X direction and the Y direction is provided in the vicinity of the center 41bc of the illumination aperture diaphragm 41b. Therefore, the illumination light IL applied to the measurement mark WMa is incident in a narrow incident angle degree range in the X direction and the Y direction.
  • the range of the angles of incidence of the illumination light IL transmitted through the transmission opening 45b on the measurement mark WM in the X and Y directions is, for example, 0 or more and 1/3 or less as the above-mentioned coherence factor.
  • the diffracted light limiting diaphragm 31b is provided with a selection opening 35b at positions separated from the center 31bc in the ⁇ X direction and the ⁇ Y direction. Of the selected openings 35b, the portion distant from the center 31 bc in the ⁇ X direction is +1 in the ⁇ X direction generated from the ⁇ X side end LX and the + X side end RX of the measurement mark WMa by irradiation with the illumination light IL.
  • the second-order diffracted light Dp1 and the -1st-order diffracted light Dm1 are passed through.
  • the portion of the selected aperture 35b that is separated from the center 31 bc in the ⁇ Y direction is the +1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 in the ⁇ Y direction generated from the central portion CY of the measurement mark WMa by irradiation with the illumination light IL. To pass through.
  • the diffracted light generated from the measurement mark WMa is shielded by the diffracted light limiting diaphragm 31b. Therefore, by using the illumination aperture diaphragm 41b and the diffracted light limiting diaphragm 31b, the positions of the measurement marks WMa shown in FIG. 3A in the X direction and the Y direction can be measured with high accuracy.
  • the measurement may be performed using the illumination aperture diaphragm 41d and the diffracted light limiting diaphragm 31d. That is, the illumination aperture aperture 41d is inserted into the illumination optical path 20P so that the center 41dc coincides with the center of the illumination optical path 20P, and the diffracted light limiting aperture 31d is connected so that the center 31dc coincides with the center of the imaging optical path 10P.
  • the measurement may be performed while being inserted into the image optical path 10P.
  • the illumination light IL transmitted near the end in the ⁇ Y direction will be described.
  • the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 in the X direction generated by irradiating the ⁇ X side end LX and the + X side end RX of the measurement mark WMa with the illumination light IL are set to the diffracted light limiting diaphragm 31d. It passes through any of the four selective openings 35d provided.
  • the diffracted light of another order in the X direction and the diffracted light in the Y direction generated by the light applied to the central portion CY of the measurement mark WMa are shielded by the diffracted light limiting diaphragm 31d.
  • the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 in the Y direction generated by irradiating the central portion CY of the measurement mark WMa with the illumination light IL are formed by the four selective openings 35d provided in the diffracted light limiting diaphragm 31d. Pass through either.
  • the diffracted light of the other order in the Y direction and the diffracted light in the Y direction generated by the light irradiated to the ⁇ X side end LX and the + X side end RX of the measurement mark WMa are the diffracted light limiting diaphragm 31d. Is shaded by.
  • the positions of the measurement marks WMa shown in FIG. 3A in the X direction and the Y direction can be measured with high accuracy.
  • the above-mentioned measurement in the X direction and the measurement in the Y direction may be sequentially performed.
  • the diffracted light limiting diaphragms 31a to 31d selectively pass the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 from the measurement mark, and shield the diffracted light of other orders.
  • the diffracted light selectively passed through the diffracted light limiting diaphragms 31a to 31d may be, for example, + second-order diffracted light Dp2 and second-order diffracted light Dm2, or + third-order diffracted light and third-order diffracted light (not shown).
  • a diaphragm that selectively passes the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 and the + 2nd-order diffracted light Dp2 and the -second-order diffracted light Dm2 are selectively selected.
  • a diaphragm is provided, and these may be switched by the selection switching unit 33 so that they can be inserted into the imaging optical path 10P.
  • the two diffracted lights passed through the diffracted light limiting diaphragms 31a to 31d are not limited to a pair of diffracted light having the same absolute value of order, such as + m-th order diffracted light and ⁇ m-th order diffracted light with respect to the natural number m.
  • a pair of diffracted lights having different absolute values of order such as + 1st-order diffracted light Dp1 and -2nd-order diffracted light Dm2, may be used. Further, one of them may be 0th-order diffracted light (specularly reflected light).
  • the diffracted light limiting diaphragms 31a to 31d are symmetrical with respect to the plane orthogonal to the measurement direction. Two diffracted lights emitted into may be passed through.
  • the diffracted light limiting diaphragms 31a to 31d may be provided with their respective selective openings line-symmetrically with respect to an axis passing through their respective centers and orthogonal to the measurement direction.
  • the illumination light IL is incident at a predetermined angle from the direction perpendicular to the object W, for example, an angle corresponding to half of the diffraction angle of the -1st-order diffracted light, for example, the 0th-order diffracted light ( It is preferable to selectively pass the specularly reflected light) and the + 1st-order diffracted light from the viewpoint of telecentricity.
  • the illumination switching unit 43 included in the illumination aperture changing unit 40 described above shifts the entire illumination aperture holding unit 42 and the illumination aperture diaphragms 41a to 41d in the X and Y directions to cover the illumination light IL. It may be possible to change the angle of incidence on the object W.
  • FIG. 5 is a diagram showing an example of the configuration of the light source unit 50 of the measuring device 1.
  • the light source unit 50 of the example includes a first light emitting unit 51a that emits the first light La of the first wavelength and a second light emitting unit 51b that emits the second light Lb of the second wavelength.
  • the first light emitting unit 51a and the second light emitting unit 51b may be members such as a laser or an LED that emit light by themselves, or may be members that emit light introduced from the outside of the emission end of the optical fiber.
  • the first light emitting unit 51a may be a laser and the second light emitting unit 51b may be an LED.
  • the first light La and the second light Lb are mixed and separated by the polarizing beam splitter 52.
  • the S polarization component of the first light La is reflected by the polarization beam splitter 52, and the P polarization component of the second light Lb passes through the polarization beam splitter 52 to become the illumination light L1.
  • the P-polarizing component of the first light La passes through the polarizing beam splitter 52, and the S-polarizing component of the second light Lb is reflected by the polarizing beam splitter 52 to become the illumination light L2.
  • the illumination light L1 is reflected by the mirror 53 and is incident on the phase modulation element 54a.
  • the illumination light L2 directly enters the phase modulation element 54b.
  • the phase modulation elements 54a and 54b are, for example, liquid crystal elements, which function as so-called wave plates according to the voltage applied from the voltage control units 55a and 55b. That is, when the first voltage is applied from the voltage control units 55a and 55b, it functions as a 0-wave plate (flat plate), and when a second voltage is applied, it functions as a 1/2 wave plate.
  • the polarization states of the illumination lights L1 and L2 are controlled by the phase modulation elements 54a and 54b, respectively, and the illumination lights L1 and L2 are converted into the illumination lights L3 and L4.
  • the illumination light L3 that has passed through the phase modulation element 54a is incident on the polarizing beam splitter 57.
  • the illumination light L4 that has passed through the phase modulation element 54b is reflected by the mirror 56 and incident on the beam splitter 57. Then, the illumination lights L3 and L4 are combined by the beam splitter 57 and emitted from the light source unit 50 as the illumination light L5.
  • the light source unit 50 of the above example a plurality of lights having different wavelengths can be emitted simultaneously or separately, and the polarized light state of the illumination light L5 emitted by changing the states of the phase modulation elements 54a and 54b. Can be switched.
  • the first light emitting unit 51a is a laser
  • the measurement mark WM may be irradiated with the first illumination light L1. Even if the etandue of the imaged luminous flux is reduced by the diffracted light limiting diaphragm, the brightness of the imaged luminous flux is high, so that a sufficient amount of light can be secured on the imaging surface 19s.
  • the illumination NA may be about 0.4 and the imaging NA may be about 0.5.
  • the light source unit 50 of the measuring device 1 is not limited to the above-mentioned light source shown in FIG. 5, and combines one or a plurality of light emitting units and, if necessary, the light emitted from those light source units. Any light source may be used as long as it has a compositing unit.
  • the light source unit 50 may emit light having three or more different wavelengths.
  • the diffraction angle of the diffracted light of each order from the measurement mark WM becomes a different angle for each wavelength of the illumination light IL. Therefore, the positions of the diffracted lights (Dm2, Dm1, Dp1, Dp2, etc.) of each order on the diffracted light limiting diaphragms 31a to 31d also differ depending on the wavelength of the illumination light IL. Therefore, in order to selectively pass diffracted light of a predetermined order of light of a plurality of wavelengths through the selection openings 35a to 35d, the wavelength widths of the plurality of wavelengths using the width of the selection openings 35a to 35d in the measurement direction are used. Need to be expanded accordingly.
  • FIG. 6A is a diagram showing an example of the size of the transmission aperture 45a provided in the illumination aperture diaphragm 41a when the light source unit 50 that emits light of a plurality of wavelengths is used
  • FIG. 6B is a diagram. It is a figure which shows an example of the size of the selection opening 35a provided in the diffracted light limiting diaphragm 31a.
  • the light source unit 50 is assumed to emit light having a wavelength from the minimum wavelength having a wavelength of ⁇ 1 to the maximum wavelength having a wavelength of ⁇ 2, and as shown in FIG. 2A, the period PX in the X direction.
  • the measurement mark WM having the
  • the illumination aperture diaphragm 41a is provided on or near the pupil surface of the illumination system 20, and the diffracted light limiting diaphragm 31a is provided on or near the pupil surface of the imaging system 10. Therefore, in FIGS. 6A and 6B, the XY coordinates in each of the drawings are set to the sine of the angle of incidence of the illumination light IL on the object W to be measured, or the diffracted light (Dm2, Dm1, Dp1, Dp2, etc.). ) Corresponds to the sine of the ejection angle from the object W to be measured.
  • the width of one side of the transmission opening 45a in the X direction is defined as iNA, and the total width of the transmission opening 45a in the X direction is defined as 2 ⁇ iNA.
  • the center position of the transmission aperture 45a in the X direction coincides with the center 41ac of the illumination aperture diaphragm 41a.
  • a selection opening 35a is arranged at positions separated by DX in the + X direction and ⁇ X direction from the center 31ac of the diffracted light limiting diaphragm 31a in the X direction, respectively.
  • the value of DX is ( ⁇ 1 + ⁇ 2) / (2 ⁇ PX)
  • the measurement mark WM having a period PX contains light having a wavelength substantially intermediate between the above-mentioned minimum wavelength ( ⁇ 1) and maximum wavelength ( ⁇ 2). It corresponds to the sine of the diffraction angle of the ⁇ primary diffracted light generated when irradiated.
  • the width of each of the selection openings 35a in the X direction may be SX, and SX may satisfy the equation (1).
  • SX ⁇ (3 ⁇ ⁇ 1- ⁇ 2) / PX-2 ⁇ iNA ⁇ ⁇ ⁇ (1)
  • the selective aperture 35a can pass the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 of the illumination light IL from the minimum wavelength ( ⁇ 1) to the maximum wavelength ( ⁇ 2) and lead to the imaging unit 19.
  • the diffracted light limiting diaphragm 31a blocks light of other order diffracted light (Dm2, Dp2, etc.).
  • the selective aperture 35a selectively passes the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 but passes two diffracted lights of other orders such as the + m-th-order diffracted light and the ⁇ m-order diffracted light. It may be passed selectively.
  • the SX may satisfy the condition of the equation (2) instead of the equation (1). SX ⁇ (m + 2) x ⁇ 1-m x ⁇ 2) / PX-2 x iNA ... (2)
  • the selection aperture 35a When the minimum wavelength ( ⁇ 1) and the maximum wavelength ( ⁇ 2) are significantly different, it becomes difficult for the selection aperture 35a to selectively pass only the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 by the above method. .. However, if the range is about ⁇ 1 ⁇ 2 ⁇ 2 ⁇ ⁇ 1, only the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 can be selectively passed through the above-mentioned selective opening 35a extended in the X direction.
  • the selection opening 35a extended in the X direction described above is used.
  • ⁇ 1 ⁇ 2 ⁇ 3 ⁇ ⁇ 1 can selectively pass diffracted light of two desired orders.
  • the illumination aperture diaphragm 41a and the diffracted light limiting diaphragm 31a shown in FIGS. 6 (a) and 6 (b) are rotated by 90 ° in the XY plane, respectively. do it.
  • the diffracted light limiting unit 30 includes a plurality of diffracted light limiting diaphragms 31a to 31d having differently shaped selection openings 35a to 35d, and the selection switching unit 33 selects and forms an image. It is supposed to be inserted into the optical path 10P.
  • the configuration of the diffracted light limiting unit 30 is not limited to this, and for example, it has a plurality of movable blades, and the selection switching unit 33 moves the position of each movable blade to obtain the position of the selection opening and the position of the selection opening.
  • the configuration may be such that the shape can be changed.
  • the illumination aperture changing unit 40 has a plurality of movable blades, and the position and shape of the transmission aperture can be changed by moving the position of each movable blade of the illumination switching unit 43. You may. Further, instead of using the illumination aperture diaphragms 41a to 41d to block a part of the illumination light IL, an optical member that collects the illumination light IL at a position corresponding to the transmission apertures 45a to 45d may be used.
  • the illumination aperture changing portion 40 can also be referred to as a diffracted light passing portion.
  • the imaging system 10 has an intermediate imaging surface MP, and an index plate 15 is arranged on the intermediate imaging surface MP.
  • an index plate 15 is arranged on the intermediate imaging surface MP.
  • the mechanical rigidity and temperature stability of the imaging system 10 are good, for example, a predetermined imaging pixel of the imaging unit 19 can be used as the measurement reference position of the imaging system 10 described above. Therefore, the index plate 15 does not necessarily have to be arranged. Therefore, it is not necessary to form the intermediate image plane MP for arranging the index plate 15.
  • the measurement mark can be measured with high accuracy even when the imaging system 10 is mechanically or thermally deformed. It has the effect of being able to measure the position of the WM.
  • the measuring device of the first embodiment described above is optically coupled to the illumination system 20 that irradiates the object W located on the object surface OP with light (illumination light IL) and the object surface OP. Limiting at least a part of the imaging systems 10, 10a, 10b forming the conjugate plane CP and the plurality of diffracted lights (Dm2, Dm1, Dp1, Dp2, etc.) from the object W to be measured, and a plurality of diffractions.
  • the first diffracted light + 1st diffracted light Dp1 etc.) and the second diffracted light different from the first diffracted light (-1st diffracted light Dm1 etc.) are passed through the diffracted light limiting unit 30 and arranged on the conjugate surface CP.
  • FIG. 7 (b) is used instead of at least a part of the diffracted light limiting diaphragms 31a to 31d shown in FIG. 4 (b).
  • the illumination aperture diaphragm 41e shown in FIG. 7A is used instead of at least a part of the illumination aperture diaphragms 41a to 41d shown in FIG. 4A.
  • the configurations other than the diffracted light limiting diaphragm e and the illumination aperture diaphragm 41e are the same as those of the measuring device 1 of the first embodiment described above, and thus the description of the same configuration will be omitted. ..
  • the illumination aperture diaphragm 41e shown in FIG. 7A has a transmissive aperture 45f near the center 45 ec, a transmissive aperture 45e at a position away from the center 45 ec in the ⁇ Y direction, and a position away from the center 45 ec in the + Y direction.
  • Each of the transmission openings 45 g is provided.
  • the transmission opening 45f transmits the light of the first wavelength of the light contained in the illumination light IL.
  • the transmission opening 45e transmits light having a second wavelength shorter than that of the first wavelength among the lights contained in the illumination light IL.
  • the transmission opening 45g transmits light having a third wavelength longer than the first wavelength among the lights contained in the illumination light IL.
  • the illumination light IL transmitted through any of the transmission openings 45e, 45f, and 45g is guided by the lenses 22, 24, the mirror 23, and the branch mirror 25, and is irradiated on the measurement mark WM.
  • the light of the first wavelength transmitted through the transmission opening 45f is incident on the measurement mark WM from substantially vertically above. Due to the imaging action of the lenses 22 and 24 described above, the light of the second wavelength transmitted through the transmission opening 45e is incident on the measurement mark WM from a direction inclined in the ⁇ Y direction with respect to the vertical upper direction. Further, the light of the second wavelength transmitted through the transmission opening 45 g is incident on the measurement mark WM from a direction inclined in the + Y direction with respect to the vertical upper direction.
  • the emission angle of the diffracted light generated from the measurement mark WM also shifts according to the wavelength.
  • the position at which the diffracted light of each order is collected in the diffracted light limiting diaphragm 31e can be shifted in the Y direction for each wavelength.
  • the diffracted light limiting diaphragm 31e shown in FIG. 7B is provided with selection openings 35e, 35f, and 35g which are arranged in pairs in the X direction at different positions in the Y direction.
  • the distance between the two selection openings 35e in the X direction is shorter than the distance between the two selection openings 35f in the X direction, and the distance between the two selection openings 35g in the X direction is longer than the distance between the two selection openings 35f in the X direction.
  • the illumination light IL of the first wavelength transmitted through the transmission opening 45f is incident on the measurement mark WM substantially perpendicularly, and the + 1st-order diffracted light Dp1 and the -1st-order diffracted light are incident on the measurement mark WM.
  • Dm1 passes through the selective opening 35f of the diffracted light limiting diaphragm 31e and reaches the imaging unit 19.
  • the illumination light IL of the second wavelength transmitted through the transmission aperture 45e is incident on the measurement mark WM from the direction inclined in the ⁇ Y direction, and the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 are the selective aperture 35e of the diffracted light limiting diaphragm 31e. And reaches the imaging unit 19.
  • the illumination light IL of the third wavelength transmitted through the transmission opening 45 g is incident on the measurement mark WM from the direction inclined in the + Y direction, and the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 pass through the selective opening 35 g of the diffracted light limiting diaphragm 31e. It passes through and reaches the imaging unit 19.
  • the measurement mark WM is +1 next time.
  • the folding light Dp1 and the -1st order diffracted light Dm1 can be selectively passed through.
  • the image pickup unit 19 can form a good image of the measurement mark WM.
  • the light source unit 50 may simultaneously emit the above-mentioned light of a plurality of different wavelengths (light of the first wavelength to light of the third wavelength).
  • the wavelength of the light emitted at predetermined time intervals may be different. That is, the light of the first wavelength may be irradiated in the first period, and the light of the second wavelength may be irradiated in the second period different from the first period.
  • the imaging unit 19 can separately capture the image of the measurement mark WM for each different wavelength by performing imaging in the first period and the second period described above, respectively. Therefore, more accurate measurement can be performed by separately measuring the position of the measurement mark WM for each different wavelength and performing statistical processing such as averaging on the measurement results. Further, the spectroscopy may be performed in the non-measurement direction at the position of the intermediate image plane MP.
  • the above-mentioned diffractive light limiting diaphragm 31e and illumination are used.
  • a diffractive light limiting diaphragm and an illumination aperture diaphragm having a shape in which the aperture diaphragm 41e is rotated by 90 ° may be used.
  • the above modification 1 of the measuring device includes an illumination system 20 that irradiates an object W located on the object surface OP with light of a plurality of wavelengths, and a conjugate surface that is optically conjugated to the object surface OP.
  • an imaging unit 19 that captures a light / dark pattern (image IM) of the object to be measured W formed by.
  • the measuring device 1 of the first embodiment described above has the same effect as the measuring device 1 of the first embodiment described above, and also has an effect that more accurate measurement can be performed by using light having a plurality of wavelengths. For example, it is effective when the image contrast of the measurement mark is good at a certain wavelength but the image contrast of the measurement mark is weak at another wavelength due to the unevenness of the measurement mark.
  • FIG. 8 is a diagram schematically showing a portion of the measuring device 1 of the modified example 2 corresponding to the imaging system 10 after the index plate 15 of the measuring device 1 of the first embodiment described above.
  • the beam splitter 17 is arranged between the second relay lens 13 and the third relay lens 14a. Therefore, the diffracted light such as the + 1st-order diffracted light Dp1 and the -1st-order diffracted light Dm1 is split into two by the beam splitter 17.
  • One of the divided diffracted lights travels straight through the beam splitter 17 and is focused by the third relay lens 14a, and the image IM of the measurement mark WM is placed on the imaging surface 19as of the first imaging unit 19a.
  • the other of the divided diffracted light (Dp1b, Dm1b) is reflected by the beam splitter 17 and focused by the third relay lens 14b, and the image IM of the measurement mark WM is placed on the imaging surface 19bs of the second imaging unit 19b.
  • the optical system from the objective lens 11 (see FIG. 1) to the third relay lens 14a via the index plate 15 and the beam splitter 17 constitutes one imaging system 10a.
  • the optical system from the objective lens 11 to the third relay lens 14b via the index plate 15 and the beam splitter 17 constitutes another imaging system 10b. That is, the measuring device 1 of the modified example 2 has a plurality of imaging systems 10a and 10b.
  • the imaging surface 19as of the first imaging unit 19a is arranged in the vicinity of the conjugate surface CPa with respect to the object surface OP of the imaging system 10a.
  • the imaging surface 19bs of the second imaging unit 19b is arranged in the vicinity of the conjugate surface CPb with respect to the object surface OP of the imaging system 10b.
  • the amount of displacement of the imaging surface 19as with respect to the conjugate surface CPa in the Z direction is different from the amount of displacement of the imaging surface 19bs with respect to the conjugate surface CPb in the X direction.
  • the relative position of the imaging surface 19as of the first imaging unit 19a with respect to the conjugate surface CPa in the direction intersecting the conjugate surface CPa intersects the conjugate surface CPb of the imaging surface 19bs of the second imaging unit 19b with respect to the conjugate surface CPb. It is different from the relative position in the direction.
  • the image formed on the imaging surface 19as is relative to the object surface OP and the measurement mark WM arranged at positions deviated from the object surface OP in the ⁇ Z direction.
  • Good contrast On the other hand, the image formed on the imaging surface 19bs has a good contrast with respect to the object surface OP and the measurement mark WM arranged at a position deviated from the object surface OP in the + Z direction.
  • the position where the beam splitter 17 for branching the optical paths of the plurality of imaging systems 10a and 10b is arranged is not limited to the position between the second relay lens 13 and the third relay lens 14 described above.
  • the beam splitter 17 that splits the optical path may be arranged on the objective lens 11 side of the index plate 15, or may be arranged on the objective lens 11 side of the diffracted light limiting unit 30, for example. In these cases, the index plate 15 or the diffracted light limiting unit 30 may be arranged in each of the plurality of imaging systems 10a and 10b.
  • FIG. 9 is a diagram showing an outline of the exposure apparatus 2 of the second embodiment.
  • the exposure apparatus 2 of the second embodiment is bright and dark on a photoresist (not shown) formed on the surface (+ Z side surface) of a substrate for a semiconductor wafer or a display device (hereinafter, collectively referred to as a “substrate”) WF. It is an exposure apparatus for exposure transfer of a pattern.
  • the exposure apparatus 2 includes a part of the measuring apparatus 1 of the first embodiment or the modified example described above as the measuring apparatus 1a.
  • the measuring device 1a is a part of the measuring device 1 of the first embodiment or the modified example, including the imaging system 10, the lighting system 20, the diffracted light limiting unit 30, the imaging unit 19, and the light source unit 50.
  • the configurations and functions of the control unit 60, the sample table 70, the guide 71, the scale plate 72, and the encoder 61 are included in the measuring apparatus 1 of the first embodiment or the modified example. Since it is the same as the function and the function, the description thereof will be omitted as appropriate.
  • the measuring device 1 treats the substrate WF as the above-mentioned object W to be measured, and measures the position of the measurement mark WM (see FIG. 1, not shown in FIG. 9) formed on the surface of the substrate WF.
  • the substrate WF carried into the exposure apparatus 2 is placed on a sample table 70 that can be moved on the guide 71, and is arranged below the measuring device 1a by moving the sample table 70.
  • the control unit 60 sends the control signal S3 to move the sample table 70 in the XY plane, and the measurement marks WM arranged at a plurality of locations on the surface of the substrate WF are sequentially placed directly under the imaging system 10 of the measurement device 1a.
  • the position of the measurement mark WM is measured by the method described above.
  • the control unit 60 sets the X position of the existing circuit pattern on the substrate WF and the X position of the existing circuit pattern on the substrate WF based on the information regarding the positional relationship between the known measurement mark WM and the existing circuit pattern and the position of the measurement mark WM measured by the measuring device 1a. Create map data for the Y position.
  • control unit 60 moves the sample table 70 in the XY plane so that the substrate WF is arranged under the exposure optical system 80, and the photoresist formed on the surface of the substrate WF (not shown). To expose.
  • the exposure may be so-called step exposure or scan exposure.
  • the X and Y positions of the sample table 70 during exposure are measured and positioned by the encoder 61a integrally held with the exposure optical system 80 via the position of the scale plate 72 provided on the sample table 70. It is transmitted to the control unit 60 as a signal S2a.
  • the control unit 60 controls the X position and the Y position of the sample table 70 based on the position signal S2a and the above-mentioned map data.
  • the original plate (mask pattern) drawn on the mask 83 is irradiated with the illumination light from the exposure light source 81 via the exposure illumination system 82.
  • the image of the original plate is projected onto the photoresist (not shown) on the substrate WF via the exposure optical system 80 arranged on the exposure optical path AXP, and the light-dark pattern is exposed on the photoresist.
  • the mask 83 and the substrate WF are synchronously scanned relative to the exposure optical system 80 during the exposure operation.
  • the mask 83 is placed on the mask stage 84, and the mask stage 84 can move in the X direction on the mask surface plate 85.
  • the position of the mask stage 84 is measured by the interferometer 87 via the position of the reference mirror 86.
  • the exposure operation is step exposure, the sample table 70 is stationary during the exposure of one shot, and the sample table 70 moves in the X direction or the Y direction by a predetermined distance between each shot.
  • the exposure optical system 80 may be a so-called immersion optical system in which a liquid is arranged between the exposure optical system 80 and the substrate WF.
  • the exposure apparatus 2 is not limited to an apparatus that exposes with light or ultraviolet rays, and may be an apparatus that exposes with an electron beam or an X-ray.
  • the exposure apparatus 2 may include a plurality of measuring devices 1a and can simultaneously measure a plurality of measurement mark WMs on the substrate WF.
  • the exposure device 2 of the second embodiment is an exposure that irradiates an object including the above-mentioned measuring device of the first embodiment, the modified example 1 or the modified example 2 and the object to be measured W (the substrate WF) with exposure light. It includes an optical system 80. With this configuration, the position of the measurement mark WM formed on the substrate WF can be measured with high accuracy, and therefore, the position can be accurately measured with respect to the existing circuit pattern formed on the substrate WF. The light and dark patterns can be exposed by matching.
  • the surface WS of the object to be measured W is directly covered with the film RS.
  • the first type of medium ML1 is embedded in the recess MB of the measurement mark WM of the object to be measured W, and a second type of medium different from the first type is placed on the recess MB.
  • the structure may be such that the ML2 is covered and the film RS is formed on the medium ML2 of the second type.
  • the film thickness of the second type medium ML2 may change depending on the process.
  • the contrast of the image of the measurement mark WM formed on the imaging surface 19s changes depending on the change in the film thickness of the medium ML2.
  • the mark may be measured by using the illumination light in the wavelength range in which the contrast of the image of the measurement mark WM is good.
  • the present invention is not limited to the above contents. Other aspects conceivable within the scope of the technical idea of the present invention are also included within the scope of the present invention. In this embodiment, all or a part of the above-described embodiments may be combined.
  • 1,1a Measuring device, 10,10a, 10b: Imaging system, 11: Objective lens, 15: Indicator plate, 16: Position index, 19: Imaging unit, OP: Object surface, CP: Conjugate surface, MP: Intermediate Imaging surface, 20: Illumination system, 40: Illumination aperture changing part, 41a to 41e: Illumination aperture diaphragm, 30: Diffraction light limiting part, 31a to 31e: Diffused light limiting diaphragm, 33: Selection switching part, 50: Light source part , 60: Control unit, W: Object W, WM, WMa, WMb: Measurement mark, 2: Exposure device, 80: Exposure optical system, 81: Exposure light source, 82: Exposure illumination system

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PCT/JP2020/016332 2020-04-13 2020-04-13 計測装置、露光装置、および計測方法 Ceased WO2021210052A1 (ja)

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EP20931549.8A EP4137776A4 (en) 2020-04-13 2020-04-13 Measuring device, exposure device, and measurement method
JP2022514887A JP7468630B2 (ja) 2020-04-13 2020-04-13 計測装置、露光装置、および計測方法
PCT/JP2020/016332 WO2021210052A1 (ja) 2020-04-13 2020-04-13 計測装置、露光装置、および計測方法
KR1020227035084A KR20220166806A (ko) 2020-04-13 2020-04-13 계측 장치, 노광 장치, 및 계측 방법
CN202080099368.1A CN115443399A (zh) 2020-04-13 2020-04-13 测量装置、曝光装置以及测量方法
US17/917,584 US12345517B2 (en) 2020-04-13 2020-04-13 Measuring device, exposure device, and measurement method
TW110112863A TWI890772B (zh) 2020-04-13 2021-04-09 測量裝置、曝光裝置、測量方法以及曝光方法
JP2024059315A JP2024095727A (ja) 2020-04-13 2024-04-02 光源装置、計測装置、露光装置、および計測方法

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JP7468630B2 (ja) 2024-04-16
EP4137776A1 (en) 2023-02-22
KR20220166806A (ko) 2022-12-19
JPWO2021210052A1 (https=) 2021-10-21
CN115443399A (zh) 2022-12-06
US12345517B2 (en) 2025-07-01
TWI890772B (zh) 2025-07-21

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