CN115443399A - 测量装置、曝光装置以及测量方法 - Google Patents

测量装置、曝光装置以及测量方法 Download PDF

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Publication number
CN115443399A
CN115443399A CN202080099368.1A CN202080099368A CN115443399A CN 115443399 A CN115443399 A CN 115443399A CN 202080099368 A CN202080099368 A CN 202080099368A CN 115443399 A CN115443399 A CN 115443399A
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CN
China
Prior art keywords
light
diffracted light
imaging
measured
illumination
Prior art date
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Pending
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CN202080099368.1A
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English (en)
Chinese (zh)
Inventor
大桥道雄
高桥聡
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Nikon Corp
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Nikon Corp
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Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN115443399A publication Critical patent/CN115443399A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2518—Projection by scanning of the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202080099368.1A 2020-04-13 2020-04-13 测量装置、曝光装置以及测量方法 Pending CN115443399A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/016332 WO2021210052A1 (ja) 2020-04-13 2020-04-13 計測装置、露光装置、および計測方法

Publications (1)

Publication Number Publication Date
CN115443399A true CN115443399A (zh) 2022-12-06

Family

ID=78084740

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080099368.1A Pending CN115443399A (zh) 2020-04-13 2020-04-13 测量装置、曝光装置以及测量方法

Country Status (7)

Country Link
US (1) US12345517B2 (https=)
EP (1) EP4137776A4 (https=)
JP (2) JP7468630B2 (https=)
KR (1) KR20220166806A (https=)
CN (1) CN115443399A (https=)
TW (1) TWI890772B (https=)
WO (1) WO2021210052A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7153942B2 (ja) * 2020-08-17 2022-10-17 ラトナ株式会社 情報処理装置、方法、コンピュータプログラム、及び、記録媒体
CN117836722A (zh) * 2021-08-20 2024-04-05 Asml荷兰有限公司 用于不均匀表面的补偿光学系统、量测系统、光刻设备及其方法
WO2023214197A1 (zh) * 2022-05-02 2023-11-09 刘正锋 应用光学新理论提升光学仪器分辨能力的方法及装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338871A (ja) * 2001-04-02 2001-12-07 Canon Inc 投影露光装置
US6421123B1 (en) * 1995-02-06 2002-07-16 Nikon Corporation Position detecting apparatus
US20050117140A1 (en) * 2003-12-01 2005-06-02 Canon Kabushiki Kaisha Position detector, position detecting method, and exposure apparatus having the same
US20080013073A1 (en) * 2004-04-23 2008-01-17 Mitsuru Kobayashi Measurement Method, Measurement Apparatus, Exposure Method, and Exposure Apparatus
CN104704333A (zh) * 2012-10-05 2015-06-10 国立大学法人香川大学 分光特性测量装置
US20170242343A1 (en) * 2016-02-19 2017-08-24 Asml Netherlands B.V. Method of Measuring a Structure, Inspection Apparatus, Lithographic System, Device Manufacturing Method and Wavelength-Selective Filter for Use therein
CN107407894A (zh) * 2014-12-24 2017-11-28 株式会社尼康 测量装置及测量方法、曝光装置及曝光方法、以及器件制造方法
US20190204180A1 (en) * 2017-12-29 2019-07-04 Asml Netherlands B.V. Method of processing data, method of obtaining calibration data

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638390B2 (ja) * 1986-04-09 1994-05-18 株式会社日立製作所 投影式露光装置
JP2512873B2 (ja) * 1987-07-22 1996-07-03 株式会社ニコン 光束安定装置
JP3158544B2 (ja) * 1991-09-17 2001-04-23 株式会社ニコン 走査型位置検出装置
JP3216240B2 (ja) * 1992-06-04 2001-10-09 キヤノン株式会社 位置合わせ方法及びそれを用いた投影露光装置
JPH0934134A (ja) * 1995-07-19 1997-02-07 Nikon Corp アライメント装置
JP3273409B2 (ja) * 1997-10-28 2002-04-08 キヤノン株式会社 投影露光装置
DE10315086B4 (de) * 2003-04-02 2006-08-24 Infineon Technologies Ag Verfahren und Vorrichtung zum Ausrichten von Halbleiterwafern bei der Halbleiterherstellung
US6886937B2 (en) * 2003-06-20 2005-05-03 Vision - Ease Lens, Inc. Ophthalmic lens with graded interference coating
WO2014019846A2 (en) * 2012-07-30 2014-02-06 Asml Netherlands B.V. Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method
KR101855243B1 (ko) * 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
JP6426984B2 (ja) * 2014-11-18 2018-11-21 キヤノン株式会社 リソグラフィ装置および物品製造方法
JP2017102265A (ja) 2015-12-01 2017-06-08 キヤノン株式会社 走査型顕微鏡
JP7152877B2 (ja) * 2017-06-15 2022-10-13 キヤノン株式会社 検出装置、リソグラフィー装置および物品製造方法
EP3470926A1 (en) * 2017-10-16 2019-04-17 ASML Netherlands B.V. Metrology apparatus, lithographic system, and method of measuring a structure

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6421123B1 (en) * 1995-02-06 2002-07-16 Nikon Corporation Position detecting apparatus
JP2001338871A (ja) * 2001-04-02 2001-12-07 Canon Inc 投影露光装置
US20050117140A1 (en) * 2003-12-01 2005-06-02 Canon Kabushiki Kaisha Position detector, position detecting method, and exposure apparatus having the same
US20080013073A1 (en) * 2004-04-23 2008-01-17 Mitsuru Kobayashi Measurement Method, Measurement Apparatus, Exposure Method, and Exposure Apparatus
CN104704333A (zh) * 2012-10-05 2015-06-10 国立大学法人香川大学 分光特性测量装置
CN107407894A (zh) * 2014-12-24 2017-11-28 株式会社尼康 测量装置及测量方法、曝光装置及曝光方法、以及器件制造方法
US20170242343A1 (en) * 2016-02-19 2017-08-24 Asml Netherlands B.V. Method of Measuring a Structure, Inspection Apparatus, Lithographic System, Device Manufacturing Method and Wavelength-Selective Filter for Use therein
US20190204180A1 (en) * 2017-12-29 2019-07-04 Asml Netherlands B.V. Method of processing data, method of obtaining calibration data

Also Published As

Publication number Publication date
TW202144739A (zh) 2021-12-01
US20230152083A1 (en) 2023-05-18
JP2024095727A (ja) 2024-07-10
WO2021210052A1 (ja) 2021-10-21
EP4137776A4 (en) 2024-09-18
JP7468630B2 (ja) 2024-04-16
EP4137776A1 (en) 2023-02-22
KR20220166806A (ko) 2022-12-19
JPWO2021210052A1 (https=) 2021-10-21
US12345517B2 (en) 2025-07-01
TWI890772B (zh) 2025-07-21

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