JPWO2021210052A1 - - Google Patents
Info
- Publication number
- JPWO2021210052A1 JPWO2021210052A1 JP2022514887A JP2022514887A JPWO2021210052A1 JP WO2021210052 A1 JPWO2021210052 A1 JP WO2021210052A1 JP 2022514887 A JP2022514887 A JP 2022514887A JP 2022514887 A JP2022514887 A JP 2022514887A JP WO2021210052 A1 JPWO2021210052 A1 JP WO2021210052A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
- G01B11/2518—Projection by scanning of the object
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024059315A JP2024095727A (ja) | 2020-04-13 | 2024-04-02 | 光源装置、計測装置、露光装置、および計測方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/016332 WO2021210052A1 (ja) | 2020-04-13 | 2020-04-13 | 計測装置、露光装置、および計測方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024059315A Division JP2024095727A (ja) | 2020-04-13 | 2024-04-02 | 光源装置、計測装置、露光装置、および計測方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021210052A1 true JPWO2021210052A1 (https=) | 2021-10-21 |
| JPWO2021210052A5 JPWO2021210052A5 (https=) | 2023-03-20 |
| JP7468630B2 JP7468630B2 (ja) | 2024-04-16 |
Family
ID=78084740
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022514887A Active JP7468630B2 (ja) | 2020-04-13 | 2020-04-13 | 計測装置、露光装置、および計測方法 |
| JP2024059315A Ceased JP2024095727A (ja) | 2020-04-13 | 2024-04-02 | 光源装置、計測装置、露光装置、および計測方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024059315A Ceased JP2024095727A (ja) | 2020-04-13 | 2024-04-02 | 光源装置、計測装置、露光装置、および計測方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12345517B2 (https=) |
| EP (1) | EP4137776A4 (https=) |
| JP (2) | JP7468630B2 (https=) |
| KR (1) | KR20220166806A (https=) |
| CN (1) | CN115443399A (https=) |
| TW (1) | TWI890772B (https=) |
| WO (1) | WO2021210052A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7153942B2 (ja) * | 2020-08-17 | 2022-10-17 | ラトナ株式会社 | 情報処理装置、方法、コンピュータプログラム、及び、記録媒体 |
| CN117836722A (zh) * | 2021-08-20 | 2024-04-05 | Asml荷兰有限公司 | 用于不均匀表面的补偿光学系统、量测系统、光刻设备及其方法 |
| WO2023214197A1 (zh) * | 2022-05-02 | 2023-11-09 | 刘正锋 | 应用光学新理论提升光学仪器分辨能力的方法及装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237726A (ja) * | 1986-04-09 | 1987-10-17 | Hitachi Ltd | 投影式露光装置 |
| JPH0934134A (ja) * | 1995-07-19 | 1997-02-07 | Nikon Corp | アライメント装置 |
| JP2001338871A (ja) * | 2001-04-02 | 2001-12-07 | Canon Inc | 投影露光装置 |
| US20040257525A1 (en) * | 2003-06-20 | 2004-12-23 | Vision-Ease Lens, Inc. | Ophthalmic lens with graded interference coating |
| JP2016100365A (ja) * | 2014-11-18 | 2016-05-30 | キヤノン株式会社 | リソグラフィ装置および物品製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2512873B2 (ja) * | 1987-07-22 | 1996-07-03 | 株式会社ニコン | 光束安定装置 |
| JP3158544B2 (ja) * | 1991-09-17 | 2001-04-23 | 株式会社ニコン | 走査型位置検出装置 |
| JP3216240B2 (ja) * | 1992-06-04 | 2001-10-09 | キヤノン株式会社 | 位置合わせ方法及びそれを用いた投影露光装置 |
| US5706091A (en) * | 1995-04-28 | 1998-01-06 | Nikon Corporation | Apparatus for detecting a mark pattern on a substrate |
| JP3273409B2 (ja) * | 1997-10-28 | 2002-04-08 | キヤノン株式会社 | 投影露光装置 |
| DE10315086B4 (de) * | 2003-04-02 | 2006-08-24 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Ausrichten von Halbleiterwafern bei der Halbleiterherstellung |
| JP2005166785A (ja) * | 2003-12-01 | 2005-06-23 | Canon Inc | 位置検出装置及び方法、並びに、露光装置 |
| CN100463108C (zh) * | 2004-04-23 | 2009-02-18 | 尼康股份有限公司 | 测量方法、测量装置、曝光方法及曝光装置 |
| WO2014019846A2 (en) * | 2012-07-30 | 2014-02-06 | Asml Netherlands B.V. | Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method |
| EP2982949B1 (en) * | 2012-10-05 | 2020-04-15 | National University Corporation Kagawa University | Spectroscopic measurement device |
| KR101855243B1 (ko) * | 2013-08-07 | 2018-05-04 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| JP6459082B2 (ja) * | 2014-12-24 | 2019-01-30 | 株式会社ニコン | 計測装置及び計測方法、露光装置及び露光方法、並びにデバイス製造方法 |
| JP2017102265A (ja) | 2015-12-01 | 2017-06-08 | キヤノン株式会社 | 走査型顕微鏡 |
| KR102106937B1 (ko) * | 2016-02-19 | 2020-05-07 | 에이에스엠엘 네델란즈 비.브이. | 구조체 측정 방법, 검사 장치, 리소그래피 시스템, 디바이스 제조 방법 및 그 안에 사용되는 파장-선택 필터 |
| JP7152877B2 (ja) * | 2017-06-15 | 2022-10-13 | キヤノン株式会社 | 検出装置、リソグラフィー装置および物品製造方法 |
| EP3470926A1 (en) * | 2017-10-16 | 2019-04-17 | ASML Netherlands B.V. | Metrology apparatus, lithographic system, and method of measuring a structure |
| WO2019129468A1 (en) | 2017-12-29 | 2019-07-04 | Asml Netherlands B.V. | Method of processing data, method of obtaining calibration data |
-
2020
- 2020-04-13 CN CN202080099368.1A patent/CN115443399A/zh active Pending
- 2020-04-13 JP JP2022514887A patent/JP7468630B2/ja active Active
- 2020-04-13 WO PCT/JP2020/016332 patent/WO2021210052A1/ja not_active Ceased
- 2020-04-13 EP EP20931549.8A patent/EP4137776A4/en active Pending
- 2020-04-13 KR KR1020227035084A patent/KR20220166806A/ko not_active Ceased
- 2020-04-13 US US17/917,584 patent/US12345517B2/en active Active
-
2021
- 2021-04-09 TW TW110112863A patent/TWI890772B/zh active
-
2024
- 2024-04-02 JP JP2024059315A patent/JP2024095727A/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237726A (ja) * | 1986-04-09 | 1987-10-17 | Hitachi Ltd | 投影式露光装置 |
| JPH0934134A (ja) * | 1995-07-19 | 1997-02-07 | Nikon Corp | アライメント装置 |
| JP2001338871A (ja) * | 2001-04-02 | 2001-12-07 | Canon Inc | 投影露光装置 |
| US20040257525A1 (en) * | 2003-06-20 | 2004-12-23 | Vision-Ease Lens, Inc. | Ophthalmic lens with graded interference coating |
| JP2016100365A (ja) * | 2014-11-18 | 2016-05-30 | キヤノン株式会社 | リソグラフィ装置および物品製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202144739A (zh) | 2021-12-01 |
| US20230152083A1 (en) | 2023-05-18 |
| JP2024095727A (ja) | 2024-07-10 |
| WO2021210052A1 (ja) | 2021-10-21 |
| EP4137776A4 (en) | 2024-09-18 |
| JP7468630B2 (ja) | 2024-04-16 |
| EP4137776A1 (en) | 2023-02-22 |
| KR20220166806A (ko) | 2022-12-19 |
| CN115443399A (zh) | 2022-12-06 |
| US12345517B2 (en) | 2025-07-01 |
| TWI890772B (zh) | 2025-07-21 |
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