KR20220166806A - 계측 장치, 노광 장치, 및 계측 방법 - Google Patents

계측 장치, 노광 장치, 및 계측 방법 Download PDF

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Publication number
KR20220166806A
KR20220166806A KR1020227035084A KR20227035084A KR20220166806A KR 20220166806 A KR20220166806 A KR 20220166806A KR 1020227035084 A KR1020227035084 A KR 1020227035084A KR 20227035084 A KR20227035084 A KR 20227035084A KR 20220166806 A KR20220166806 A KR 20220166806A
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KR
South Korea
Prior art keywords
light
measured
diffraction light
diffraction
imaging
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Ceased
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KR1020227035084A
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English (en)
Korean (ko)
Inventor
미치오 오하시
사토시 다카하시
Original Assignee
가부시키가이샤 니콘
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Publication of KR20220166806A publication Critical patent/KR20220166806A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2518—Projection by scanning of the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020227035084A 2020-04-13 2020-04-13 계측 장치, 노광 장치, 및 계측 방법 Ceased KR20220166806A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/016332 WO2021210052A1 (ja) 2020-04-13 2020-04-13 計測装置、露光装置、および計測方法

Publications (1)

Publication Number Publication Date
KR20220166806A true KR20220166806A (ko) 2022-12-19

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ID=78084740

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KR1020227035084A Ceased KR20220166806A (ko) 2020-04-13 2020-04-13 계측 장치, 노광 장치, 및 계측 방법

Country Status (7)

Country Link
US (1) US12345517B2 (https=)
EP (1) EP4137776A4 (https=)
JP (2) JP7468630B2 (https=)
KR (1) KR20220166806A (https=)
CN (1) CN115443399A (https=)
TW (1) TWI890772B (https=)
WO (1) WO2021210052A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7153942B2 (ja) * 2020-08-17 2022-10-17 ラトナ株式会社 情報処理装置、方法、コンピュータプログラム、及び、記録媒体
CN117836722A (zh) * 2021-08-20 2024-04-05 Asml荷兰有限公司 用于不均匀表面的补偿光学系统、量测系统、光刻设备及其方法
WO2023214197A1 (zh) * 2022-05-02 2023-11-09 刘正锋 应用光学新理论提升光学仪器分辨能力的方法及装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10120294B2 (en) 2014-11-18 2018-11-06 Canon Kabushiki Kaisha Lithography apparatus and article manufacturing method

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JPH0638390B2 (ja) * 1986-04-09 1994-05-18 株式会社日立製作所 投影式露光装置
JP2512873B2 (ja) * 1987-07-22 1996-07-03 株式会社ニコン 光束安定装置
JP3158544B2 (ja) * 1991-09-17 2001-04-23 株式会社ニコン 走査型位置検出装置
JP3216240B2 (ja) * 1992-06-04 2001-10-09 キヤノン株式会社 位置合わせ方法及びそれを用いた投影露光装置
US5706091A (en) * 1995-04-28 1998-01-06 Nikon Corporation Apparatus for detecting a mark pattern on a substrate
JPH0934134A (ja) * 1995-07-19 1997-02-07 Nikon Corp アライメント装置
JP3273409B2 (ja) * 1997-10-28 2002-04-08 キヤノン株式会社 投影露光装置
JP3368266B2 (ja) * 2001-04-02 2003-01-20 キヤノン株式会社 投影露光装置
DE10315086B4 (de) * 2003-04-02 2006-08-24 Infineon Technologies Ag Verfahren und Vorrichtung zum Ausrichten von Halbleiterwafern bei der Halbleiterherstellung
US6886937B2 (en) * 2003-06-20 2005-05-03 Vision - Ease Lens, Inc. Ophthalmic lens with graded interference coating
JP2005166785A (ja) * 2003-12-01 2005-06-23 Canon Inc 位置検出装置及び方法、並びに、露光装置
CN100463108C (zh) * 2004-04-23 2009-02-18 尼康股份有限公司 测量方法、测量装置、曝光方法及曝光装置
WO2014019846A2 (en) * 2012-07-30 2014-02-06 Asml Netherlands B.V. Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method
EP2982949B1 (en) * 2012-10-05 2020-04-15 National University Corporation Kagawa University Spectroscopic measurement device
KR101855243B1 (ko) * 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
JP6459082B2 (ja) * 2014-12-24 2019-01-30 株式会社ニコン 計測装置及び計測方法、露光装置及び露光方法、並びにデバイス製造方法
JP2017102265A (ja) 2015-12-01 2017-06-08 キヤノン株式会社 走査型顕微鏡
KR102106937B1 (ko) * 2016-02-19 2020-05-07 에이에스엠엘 네델란즈 비.브이. 구조체 측정 방법, 검사 장치, 리소그래피 시스템, 디바이스 제조 방법 및 그 안에 사용되는 파장-선택 필터
JP7152877B2 (ja) * 2017-06-15 2022-10-13 キヤノン株式会社 検出装置、リソグラフィー装置および物品製造方法
EP3470926A1 (en) * 2017-10-16 2019-04-17 ASML Netherlands B.V. Metrology apparatus, lithographic system, and method of measuring a structure
WO2019129468A1 (en) 2017-12-29 2019-07-04 Asml Netherlands B.V. Method of processing data, method of obtaining calibration data

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US10120294B2 (en) 2014-11-18 2018-11-06 Canon Kabushiki Kaisha Lithography apparatus and article manufacturing method

Also Published As

Publication number Publication date
TW202144739A (zh) 2021-12-01
US20230152083A1 (en) 2023-05-18
JP2024095727A (ja) 2024-07-10
WO2021210052A1 (ja) 2021-10-21
EP4137776A4 (en) 2024-09-18
JP7468630B2 (ja) 2024-04-16
EP4137776A1 (en) 2023-02-22
JPWO2021210052A1 (https=) 2021-10-21
CN115443399A (zh) 2022-12-06
US12345517B2 (en) 2025-07-01
TWI890772B (zh) 2025-07-21

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