TWI890772B - 測量裝置、曝光裝置、測量方法以及曝光方法 - Google Patents

測量裝置、曝光裝置、測量方法以及曝光方法

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Publication number
TWI890772B
TWI890772B TW110112863A TW110112863A TWI890772B TW I890772 B TWI890772 B TW I890772B TW 110112863 A TW110112863 A TW 110112863A TW 110112863 A TW110112863 A TW 110112863A TW I890772 B TWI890772 B TW I890772B
Authority
TW
Taiwan
Prior art keywords
light
diffracted light
imaging
measurement
illumination
Prior art date
Application number
TW110112863A
Other languages
English (en)
Chinese (zh)
Other versions
TW202144739A (zh
Inventor
大橋道雄
髙橋聡
Original Assignee
日商尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商尼康股份有限公司 filed Critical 日商尼康股份有限公司
Publication of TW202144739A publication Critical patent/TW202144739A/zh
Application granted granted Critical
Publication of TWI890772B publication Critical patent/TWI890772B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2518—Projection by scanning of the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW110112863A 2020-04-13 2021-04-09 測量裝置、曝光裝置、測量方法以及曝光方法 TWI890772B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2020/016332 WO2021210052A1 (ja) 2020-04-13 2020-04-13 計測装置、露光装置、および計測方法
WOPCT/JP2020/016332 2020-04-13

Publications (2)

Publication Number Publication Date
TW202144739A TW202144739A (zh) 2021-12-01
TWI890772B true TWI890772B (zh) 2025-07-21

Family

ID=78084740

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110112863A TWI890772B (zh) 2020-04-13 2021-04-09 測量裝置、曝光裝置、測量方法以及曝光方法

Country Status (7)

Country Link
US (1) US12345517B2 (https=)
EP (1) EP4137776A4 (https=)
JP (2) JP7468630B2 (https=)
KR (1) KR20220166806A (https=)
CN (1) CN115443399A (https=)
TW (1) TWI890772B (https=)
WO (1) WO2021210052A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7153942B2 (ja) * 2020-08-17 2022-10-17 ラトナ株式会社 情報処理装置、方法、コンピュータプログラム、及び、記録媒体
CN117836722A (zh) * 2021-08-20 2024-04-05 Asml荷兰有限公司 用于不均匀表面的补偿光学系统、量测系统、光刻设备及其方法
WO2023214197A1 (zh) * 2022-05-02 2023-11-09 刘正锋 应用光学新理论提升光学仪器分辨能力的方法及装置

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US6421123B1 (en) * 1995-02-06 2002-07-16 Nikon Corporation Position detecting apparatus
US10120294B2 (en) * 2014-11-18 2018-11-06 Canon Kabushiki Kaisha Lithography apparatus and article manufacturing method
TW201931017A (zh) * 2017-10-16 2019-08-01 荷蘭商Ａｓｍｌ荷蘭公司 度量衡裝置、微影系統及測量結構的方法
TW201940983A (zh) * 2017-12-29 2019-10-16 荷蘭商Ａｓｍｌ荷蘭公司 用於處理資料之方法及用於獲得校準資料之方法

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JPH0638390B2 (ja) * 1986-04-09 1994-05-18 株式会社日立製作所 投影式露光装置
JP2512873B2 (ja) * 1987-07-22 1996-07-03 株式会社ニコン 光束安定装置
JP3158544B2 (ja) * 1991-09-17 2001-04-23 株式会社ニコン 走査型位置検出装置
JP3216240B2 (ja) * 1992-06-04 2001-10-09 キヤノン株式会社 位置合わせ方法及びそれを用いた投影露光装置
JPH0934134A (ja) * 1995-07-19 1997-02-07 Nikon Corp アライメント装置
JP3273409B2 (ja) * 1997-10-28 2002-04-08 キヤノン株式会社 投影露光装置
JP3368266B2 (ja) * 2001-04-02 2003-01-20 キヤノン株式会社 投影露光装置
DE10315086B4 (de) * 2003-04-02 2006-08-24 Infineon Technologies Ag Verfahren und Vorrichtung zum Ausrichten von Halbleiterwafern bei der Halbleiterherstellung
US6886937B2 (en) * 2003-06-20 2005-05-03 Vision - Ease Lens, Inc. Ophthalmic lens with graded interference coating
JP2005166785A (ja) * 2003-12-01 2005-06-23 Canon Inc 位置検出装置及び方法、並びに、露光装置
CN100463108C (zh) * 2004-04-23 2009-02-18 尼康股份有限公司 测量方法、测量装置、曝光方法及曝光装置
WO2014019846A2 (en) * 2012-07-30 2014-02-06 Asml Netherlands B.V. Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method
EP2982949B1 (en) * 2012-10-05 2020-04-15 National University Corporation Kagawa University Spectroscopic measurement device
KR101855243B1 (ko) * 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
JP6459082B2 (ja) * 2014-12-24 2019-01-30 株式会社ニコン 計測装置及び計測方法、露光装置及び露光方法、並びにデバイス製造方法
JP2017102265A (ja) 2015-12-01 2017-06-08 キヤノン株式会社 走査型顕微鏡
KR102106937B1 (ko) * 2016-02-19 2020-05-07 에이에스엠엘 네델란즈 비.브이. 구조체 측정 방법, 검사 장치, 리소그래피 시스템, 디바이스 제조 방법 및 그 안에 사용되는 파장-선택 필터
JP7152877B2 (ja) * 2017-06-15 2022-10-13 キヤノン株式会社 検出装置、リソグラフィー装置および物品製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6421123B1 (en) * 1995-02-06 2002-07-16 Nikon Corporation Position detecting apparatus
US10120294B2 (en) * 2014-11-18 2018-11-06 Canon Kabushiki Kaisha Lithography apparatus and article manufacturing method
TW201931017A (zh) * 2017-10-16 2019-08-01 荷蘭商Ａｓｍｌ荷蘭公司 度量衡裝置、微影系統及測量結構的方法
TW201940983A (zh) * 2017-12-29 2019-10-16 荷蘭商Ａｓｍｌ荷蘭公司 用於處理資料之方法及用於獲得校準資料之方法

Also Published As

Publication number Publication date
TW202144739A (zh) 2021-12-01
US20230152083A1 (en) 2023-05-18
JP2024095727A (ja) 2024-07-10
WO2021210052A1 (ja) 2021-10-21
EP4137776A4 (en) 2024-09-18
JP7468630B2 (ja) 2024-04-16
EP4137776A1 (en) 2023-02-22
KR20220166806A (ko) 2022-12-19
JPWO2021210052A1 (https=) 2021-10-21
CN115443399A (zh) 2022-12-06
US12345517B2 (en) 2025-07-01

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