Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F1/16—Metallic particles coated with a non-metal
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
  • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
  • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F1/05—Metallic powder characterised by the size or surface area of the particles
  • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F1/05—Metallic powder characterised by the size or surface area of the particles
  • B22F1/054—Nanosized particles
  • B22F1/0549—Hollow particles, including tubes and shells
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F9/00—Making metallic powder or suspensions thereof
  • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
  • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
  • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K7/00—Use of ingredients characterised by shape
  • C08K7/22—Expanded, porous or hollow particles
  • C08K7/24—Expanded, porous or hollow particles inorganic
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K9/00—Use of pretreated ingredients
  • C08K9/04—Ingredients treated with organic substances
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L101/00—Compositions of unspecified macromolecular compounds
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
  • C09J11/02—Non-macromolecular additives
  • C09J11/04—Non-macromolecular additives inorganic
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
  • C09J9/02—Electrically-conducting adhesives
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F2301/00—Metallic composition of the powder or its coating
  • B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
  • B22F2301/255—Silver or gold
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F2304/00—Physical aspects of the powder
  • B22F2304/05—Submicron size particles
  • B22F2304/054—Particle size between 1 and 100 nm
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F2304/00—Physical aspects of the powder
  • B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
  • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
  • B23K35/24—Selection of soldering or welding materials proper
  • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
  • B23K35/3006—Ag as the principal constituent
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K3/00—Use of inorganic substances as compounding ingredients
  • C08K3/02—Elements
  • C08K3/08—Metals
  • C08K2003/0806—Silver
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K2201/00—Specific properties of additives
  • C08K2201/002—Physical properties
  • C08K2201/005—Additives being defined by their particle size in general
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K3/00—Use of inorganic substances as compounding ingredients
  • C08K3/02—Elements
  • C08K3/08—Metals
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
  • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
  • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W40/00—Arrangements for thermal protection or thermal control
  • H10W40/20—Arrangements for cooling
  • H10W40/25—Arrangements for cooling characterised by their materials
  • H10W40/251—Organics
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W40/00—Arrangements for thermal protection or thermal control
  • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/321—Structures or relative sizes of die-attach connectors
  • H10W72/325—Die-attach connectors having a filler embedded in a matrix
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/351—Materials of die-attach connectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/351—Materials of die-attach connectors
  • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/351—Materials of die-attach connectors
  • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
  • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
  • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
  • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/12—All metal or with adjacent metals
  • Y10T428/12014—All metal or with adjacent metals having metal particles
  • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
  • Y10T428/12049—Nonmetal component

Definitions

• the present disclosure relates to a method for producing silver particles, a thermosetting resin composition, a semiconductor device, and electrical / electronic parts.
• Patent Document 1 proposes a silver sintered paste using silver nanoparticles that exhibit excellent conductivity by low-temperature firing.
• thermosetting containing A) silver particles composed of secondary particles having an average particle size of 0.5 to 5.0 ⁇ m in which primary particles having an average particle size of 10 to 100 nm are aggregated, and (B) a thermosetting resin. Sex resin composition.
• a semiconductor device in which a semiconductor element and a substrate are adhered to each other via a die attach material containing the thermosetting resin composition according to the above [1].
• An electric / electronic component in which a heat radiating member and a heat generating member are bonded to each other via a heat radiating member adhesive material containing the thermosetting resin composition according to the above [1].
• thermosetting resin composition of the present embodiment comprises (A) silver particles composed of secondary particles having an average particle size of 0.5 to 5.0 ⁇ m in which primary particles having an average particle size of 10 to 100 nm are aggregated, and (B). Includes with thermosetting resin.
• the silver particles of the component (A) are composed of secondary particles having an average particle size of 0.5 to 5.0 ⁇ m in which primary particles having an average particle size of 10 to 100 nm are aggregated. If the average particle size of the primary particles is less than 10 nm, the specific surface area may increase and the workability of the thermosetting resin composition may decrease, and if it exceeds 100 nm, the sinterability may decrease. From this point of view, the average particle size of the primary particles may be 10 to 50 nm or 20 to 50 nm.
• the average particle size of the primary particles can be measured as follows, and specifically, can be measured by the method described in Examples. Silver particles are embedded in the epoxy resin under curing conditions of 60 ° C. for 120 minutes.
• plane milling is performed with a focused ion beam (FIB) device under the conditions of a machining voltage of 4.0 kV, an inclination angle of 80 °, and a machining time of 1.5 minutes.
• FIB focused ion beam
• FE-SEM field emission scanning electron microscope
• the average particle size of the secondary particles is less than 0.5 ⁇ m, the storage stability may be lowered, and if it exceeds 5.0 ⁇ m, the sinterability may be lowered. From this point of view, the average particle size of the secondary particles may be 0.5 to 3.0 ⁇ m or 1.0 to 3.0 ⁇ m.
• the average particle size of the secondary particles is a particle size (50% particle size D50) at which the integrated volume is 50% in the particle size distribution measured using a laser diffraction type particle size distribution measuring device. It can be measured by the method described in the examples.
• the silver particles of the component (A) are secondary particles in which nano-sized primary particles are aggregated, the high activity of the surface of the primary particles is maintained, and the sinterability between the secondary particles at low temperature (self). Sinterability). Further, the sintering of the silver particles and the sintering of the silver particles and the joining member proceed in parallel. Therefore, by using the silver particles of the component (A), it is possible to obtain a thermosetting resin composition having excellent thermal conductivity, low thermal resistance, and excellent adhesive properties.
• the shape of the silver particles of the component (A) is not particularly limited, and examples thereof include a spherical shape and a flake shape.
• the shape of the silver particles of the component (A) may be spherical.
• the silver particles of the component (A) may be hollow particles or solid particles, but may be hollow particles from the viewpoint of low-temperature sinterability.
• the hollow particles mean particles in which voids are present inside the particles.
• a void may exist in the central portion of the silver particles.
• the solid particle means a particle having substantially no space inside the particle.
• the tap density of the silver particles of the component (A) may be 4.0 to 7.0 g / cm 3 , 4.5 to 7.0 g / cm 3 , and 4.5 to 6. It may be 5 g / cm 3.
• the tap density of the silver particles is 4.0 g / cm 3 or more, the silver particles can be highly filled in the thermosetting resin composition, and when the tap density is 7.0 g / cm 3 or less, the thermosetting resin It is possible to reduce the precipitation of silver particles in the composition.
• the tap density of the silver particles can be measured by using a tap density measuring device based on the ASTM standard test method B 527, and specifically, can be measured by the method described in Examples.
• the specific surface area of the silver particles of the component (A) determined by the BET method may be 0.5 to 1.5 m 2 / g, 0.5 to 1.2 m 2 / g, or 0. It may be 6 to 1.2 m 2 / g.
• the specific surface area of the silver particles is 0.5 m 2 / g or more, the contact between the silver particles can be increased, and when it is 1.5 m 2 / g or less, the viscosity of the thermosetting resin composition is lowered. Can be done.
• the specific surface area of the silver particles can be measured by the BET one-point method by nitrogen adsorption using a specific surface area measuring device, and specifically, can be measured by the method described in Examples.
• the silver particles of the component (A) may further have a positive coefficient of thermal expansion between 150 ° C. and 300 ° C., which is the firing temperature range.
• the coefficient of thermal expansion of the silver particles may be 0.2 to 10.0 ppm / ° C. or 1.5 to 8.0 ppm / ° C.
• the coefficient of thermal expansion of silver particles is a cylindrical pellet type sample having a diameter of 5 mm and a thickness of 1 mm by applying a load of 200 kgf to Ag powder silver particles for 1 minute using a mini hydraulic press (manufactured by Specac).
• thermomechanical analysis (TMA) device manufactured by Seiko Instruments Co., Ltd., trade name: TMA SS150
• TMA thermomechanical analysis
• the obtained sample was heated from room temperature (25 ° C) to a heating rate of 20 ° C.
• the thermal expansion was measured under the condition that the temperature was raised to 350 ° C. at / min.
• the coefficient of thermal expansion when the pellet length at 25 ° C. was used as a reference was determined as the coefficient of thermal expansion between 150 ° C. and 300 ° C., which is the firing temperature region.
• the sintering start temperature of the silver particles having a positive linear expansion coefficient is the temperature at which the shrinkage starts, that is, the temperature at which the thermal expansion coefficient becomes maximum.
• the temperature range is between 150 and 300 ° C.
• the silver nanoparticles constituting the silver sintered paste have a large shrinkage due to sintering, and the rate of change in thermal resistance before and after the reliability test is large. Therefore, a silver sintering paste having a small shrinkage and a small change rate of thermal resistance before and after the reliability test is required.
• the thermosetting resin composition expands the silver particles during sintering, which increases the chances of contact between the silver particles. Therefore, the sinterability is good and high thermal conductivity can be obtained.
• the rate of change in thermal resistance becomes small.
• the content of the silver particles of the component (A) in the thermosetting composition may be 20 to 95% by mass or 40 to 90% by mass.
• the thermosetting composition may contain silver particles other than the silver particles of the component (A).
• the content of the silver particles other than the silver particles of the component (A) in the thermosetting composition is 35% by mass or less. It may be 25% by mass or less, 10% by mass or less, or 5% by mass or less.
• the method for producing the silver particles of the component (A) is a step of adding aqueous ammonia to an aqueous solution containing a silver compound to obtain a silver ammine complex solution, and a step of reducing the silver ammine complex in the silver ammine complex solution obtained in the above step. It has a step of reducing with a sex compound to obtain a silver particle-containing slurry.
• Step to obtain silver ammine complex solution aqueous ammonia is added to an aqueous solution containing a silver compound to obtain a silver ammine complex solution.
• a silver compound include silver nitrate, silver chloride, silver acetate, silver oxalate, silver oxide and the like.
• the silver compound may be silver nitrate or silver acetate from the viewpoint of solubility in water.
• the amount of ammonia added may be 2 to 50 mol, 5 to 50 mol, or 10 to 50 mol per 1 mol of silver in the aqueous solution containing the silver compound.
• the average particle size of the primary particles can be within the above range.
• Step to obtain silver particle-containing slurry the silver ammine complex in the silver ammine complex solution obtained in the above step is reduced with a reducing compound to obtain a silver particle-containing slurry.
• a reducing compound By reducing the silver ammine complex with a reducing compound, the primary particles of the silver particles in the silver ammine complex are aggregated to form secondary particles (hollow particles) having a void in the center.
• the aggregation of the primary particles can be controlled, and the average particle size of the obtained secondary particles is within the above range. can do.
• the reducing compound is not particularly limited as long as it has a reducing power for reducing the silver ammine complex and precipitating silver.
• the reducing compound include hydrazine derivatives.
• the hydrazine derivative include hydrazine monohydrate, methylhydrazine, ethylhydrazine, n-propylhydrazine, i-propylhydrazine, n-butylhydrazine, i-butylhydrazine, sec-butylhydrazine, t-butylhydrazine, n.
• -Pentyl hydrazine i-Pentyl hydrazine, neo-Pentyl hydrazine, t-Pentyl hydrazine, n-hexyl hydrazine, i-hexyl hydrazine, n-heptyl hydrazine, n-octyl hydrazine, n-nonyl hydrazine, n-decyl hydrazine, n -Undecyl hydrazine, n-dodecyl hydrazine, cyclohexyl hydrazine, phenyl hydrazine, 4-methylphenyl hydrazine, benzyl hydrazine, 2-phenylethyl hydrazine, 2-hydrazine ethanol, acetohydrazine and the like can be mentioned. These may be used alone or in combination of two or more.
• the content of the reducing compound may be 0.25 to 20.0 mol, 0.25 to 10.0 mol, or 0.25 to 5.0 mol per 1 mol of silver in the silver ammine complex. There may be.
• the average particle size of the obtained secondary particles can be within the above range.
• the temperature of the silver ammine complex solution when reducing the silver ammine complex may be less than 30 ° C., or may be 0 to 20 ° C.
• the aggregation of the primary particles can be controlled, and the average particle size of the obtained secondary particles can be within the above range.
• Step of introducing protecting groups into silver particles In the method for producing silver particles of the component (A), after the step of obtaining the silver particle-containing slurry, an organic protective compound is further added to the silver particle-containing slurry obtained in the step, and a protective group is added to the silver particles. May have a step of introducing.
• the organic protective compound include carboxylic acids, amines, amides and the like.
• the organic protective compound may be a carboxylic acid from the viewpoint of enhancing dispersibility.
• carboxylic acid examples include monocarboxylic acids such as formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, capric acid, octyl acid, nonanoic acid, capric acid, oleic acid, stearic acid and isostearic acid; , Malonic acid, succinic acid, glutaric acid, adipic acid, pimelli acid, suberic acid, azelaic acid, sebacic acid, diglycolic acid and other dicarboxylic acids; benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, salicylic acid, gallic acid, etc.
• Aromatic carboxylic acids examples thereof include glycolic acid, lactic acid, tartronic acid, malic acid, glyceric acid, hydroxybutyric acid, tartrate acid, citric acid, hydroxy acid such as isocitrate.
• the blending amount of the organic protective compound may be 1 to 20 mmol, 1 to 10 mmol, or 1 to 5 mmol with respect to 1 mol of silver particles.
• the blending amount of the organic protective compound is 1 mmol or more, the silver particles can be dispersed in the resin, and when it is 20 mmol or less, the silver particles can be dispersed in the resin without impairing the sinterability.
• thermosetting resin (B) can be used without particular limitation as long as it is a thermosetting resin generally used for adhesives.
• the thermosetting resin may be a liquid resin or a resin that is liquid at room temperature (25 ° C.).
• the thermosetting resin may be at least one selected from cyanate resin, epoxy resin, acrylic resin and maleimide resin. These may be used alone or in combination of two or more.
• the cyanate resin is a compound having an -NCO group in the molecule, and is a resin that is cured by forming a three-dimensional network structure by reacting the -NCO group by heating.
• a prepolymer having a triazine ring formed by trimerizing the cyanate group of these polyfunctional cyanate resins can also be used.
• the prepolymer is obtained by polymerizing the above-mentioned polyfunctional cyanate resin monomer using, for example, an acid such as mineral acid or Lewis acid, a base such as sodium alcoholate or tertiary amines, or a salt such as sodium carbonate as a catalyst. Be done.
• the curing accelerator for the cyanate resin generally known ones can be used.
• organic metal complexes such as zinc octylate, tin octylate, cobalt naphthenate, zinc naphthenate, iron acetylacetone; metal salts such as aluminum chloride, tin chloride and zinc chloride; amines such as triethylamine and dimethylbenzylamine.
• metal salts such as aluminum chloride, tin chloride and zinc chloride
• amines such as triethylamine and dimethylbenzylamine.
• Epoxy resin is a compound that has one or more glycidyl groups in the molecule, and is a resin that forms a three-dimensional network structure and cures when the glycidyl groups react with each other by heating.
• the epoxy resin may be a compound containing two or more glycidyl groups in one molecule. This is because a compound having only one glycidyl group cannot exhibit sufficient cured product properties even if it is reacted.
• a compound containing two or more glycidyl groups in one molecule can be obtained by epoxidizing a compound having two or more hydroxyl groups.
• Such compounds include bisphenol compounds such as bisphenol A, bisphenol F, and biphenol or derivatives thereof, hydrogenated bisphenol A, hydrogenated bisphenol F, hydrogenated biphenol, cyclohexanediol, cyclohexanedimethanol, and alicyclic such as cyclohexanediethanol.
• Bifunctional diols having a structure or derivatives thereof, butane diols, hexane diols, octane diols, nonane diols, decane diols and other aliphatic diols or derivatives thereof epoxidized; trihydroxyphenylmethane skeleton, aminophenol Trifunctional ones obtained by epoxidizing compounds having a skeleton; polyfunctional ones obtained by epoxidizing phenol novolac resin, cresol novolac resin, phenol aralkyl resin, biphenyl aralkyl resin, naphthol aralkyl resin, etc. Not limited.
• the epoxy resin may be liquid at room temperature (25 ° C.) alone or as a mixture.
• reactive diluents include monofunctional aromatic glycidyl ethers such as phenylglycidyl ether and cresyl glycidyl ether, and aliphatic glycidyl ethers.
• Examples of the curing agent for the epoxy resin include aliphatic amines, aromatic amines, dicyandiamides, dihydrazide compounds, acid anhydrides, and phenol resins.
• Examples of the dihydrazide compound include carboxylic acid dihydrazides such as adipic acid dihydrazide, dodecanoic acid dihydrazide, isophthalic acid dihydrazide, and p-oxybenzoic acid dihydrazide.
• Acid anhydrides include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, dodecenyl succinic anhydride, maleic anhydride and polybutadiene reactants, and maleic anhydride and styrene. Examples include polymers.
• a curing accelerator can be blended to accelerate curing, and the curing accelerator of the epoxy resin includes imidazoles, triphenylphosphine or tetraphenylphosphine and salts thereof, amine compounds such as diazabicycloundecene, and The salts and the like can be mentioned.
• the curing accelerators are 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5.
• 2-C 11 H 23 - imidazole may be imidazol compounds such as the adduct of 2-methylimidazole and 2,4-diamino-6-vinyl-triazine. It may be an imidazole compound having a melting point of 180 ° C. or higher.
• acrylic resin examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxybutyl (meth).
• Examples thereof include (meth) acrylate having a carboxy group obtained by reacting (meth) acrylate with dicarboxylic acid or a derivative thereof.
• dicarboxylic acids that can be used here include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, phthalic acid, and tetrahydrophthalic acid. , Hexahydrophthalic acid and derivatives thereof and the like.
• acrylic resin a compound having a (meth) acrylic group in a polyether, polyester, polycarbonate, or poly (meth) acrylate having a molecular weight of 100 to 10,000; a (meth) acrylate having a hydroxy group; having a hydroxy group.
• examples include (meth) acrylamide.
• Maleimide resin is a compound containing one or more maleimide groups in one molecule, and is a resin that forms a three-dimensional network structure and cures when the maleimide groups react with each other by heating.
• the maleimide resin include N, N'-(4,4'-diphenylmethane) bismaleimide, bis (3-ethyl-5-methyl-4-maleimidephenyl) methane, and 2,2-bis [4- (4). -Maleimidephenoxy) Phenyl]
• Examples of bismaleimide resins such as propane.
• the maleimide resin may be a compound obtained by a reaction of diamine dimerate with maleic anhydride; a compound obtained by a reaction of a maleimided amino acid such as maleimide acetic acid or maleimide caproic acid with a polyol.
• the maleimided amino acid can be obtained by reacting maleic anhydride with aminoacetic acid or aminocaproic acid.
• the polyol may be a polyether polyol, a polyester polyol, a polycarbonate polyol, a poly (meth) acrylate polyol, or one that does not contain an aromatic ring.
• the content of (B) the thermosetting resin may be 1 to 20 parts by mass or 5 to 18 parts by mass with respect to 100 parts by mass of (A) silver particles.
• the amount of the thermosetting resin is 1 part by mass or more, the adhesiveness of the thermosetting resin can be obtained, and when the amount of the thermosetting resin is 20 parts by mass or less, the proportion of the silver component decreases. It is possible to control the heat conductivity, sufficiently ensure high thermal conductivity, and improve heat dissipation. In addition, the amount of organic components does not increase too much, deterioration due to light and heat is suppressed, and as a result, the life of the light emitting device can be extended.
• the total content of the (A) silver particles and the (B) thermosetting resin in the thermosetting composition may be 30 to 99% by mass or 50 to 98% by mass.
• thermosetting resin composition of the present embodiment may further contain (C) a diluent from the viewpoint of workability.
• diluent (C) include butyl carbitol, cellosolve acetate, ethyl cellosolve, butyl cellosolve, butyl cellosolve acetate, butyl carbitol acetate, diethylene glycol dimethyl ether, diacetone alcohol, N-methyl-2-pyrrolidone (NMP), and dimethylformamide.
• DMAc N, N-Dimethylacetamide
• ⁇ -butyrolactone 1,3-dimethyl-2-imidazolidinone
• 3,5-dimethyl-1-adamantanamine (DMA) and the like may be used alone or in combination of two or more.
• thermosetting resin composition of the present embodiment contains (C) a diluent
• the content thereof may be 3 to 20 parts by mass with respect to 100 parts by mass of (A) silver particles. It may be up to 15 parts by mass or 4 to 10 parts by mass.
• the content of the diluent is 3 parts by mass or more, the viscosity can be reduced by dilution, and when it is 20 parts by mass or less, voids in curing the thermosetting resin composition of the present embodiment. Can be controlled.
• thermosetting resin composition of the present embodiment contains low stress agents such as rubber and silicone, which are generally blended in this type of composition; coupling agents; antifoaming agents; surfactants. Agents; colorants such as pigments and dyes; various polymerization inhibitors; antioxidants; solvents; various other additives can be contained as required. One of these additives may be used alone, or two or more thereof may be mixed and used.
• thermosetting resin composition of the present embodiment is prepared after sufficiently mixing the above-mentioned (A) silver particles, (B) thermosetting resin, (C) diluent and various additives contained if necessary. Further, it can be prepared by kneading with a diluent, a kneader, a three-roll mill or the like, and then defoaming.
• the thermal conductivity of the cured product of the thermosetting resin composition of the present embodiment may be 35 W / mK or more, or 40 W / mK or more.
• the thermal resistance of the cured product of the thermosetting resin composition of the present embodiment may be 0.5 K / W or less, or 0.3 K / W or less.
• the thermal conductivity and thermal resistance can be measured by the methods described in the examples, respectively.
• the viscosity of the thermosetting resin composition of the present embodiment may be 70 to 200 Pa ⁇ s or 100 to 200 Pa ⁇ s.
• the above viscosity is a value measured at 25 ° C. using an E-type viscometer (3 ° cone). Specifically, it can be measured by the method described in Examples.
• thermosetting resin composition of the present embodiment has low viscosity, good dispersibility and adhesive properties, excellent thermal conductivity, low thermal resistance, small volume shrinkage, and excellent low stress property. Therefore, it can be used as a die-attaching material for adhering elements, a material for adhering heat-dissipating members, and the like.
• the semiconductor element and the substrate are adhered to each other via a die attach material containing the above-mentioned thermosetting resin composition.
• the electric / electronic component of the present embodiment the heat radiating member and the heat generating member are bonded to each other via the heat radiating member adhesive material containing the thermosetting resin composition described above. Therefore, the semiconductor device and the electric / electronic parts of the present embodiment are excellent in reliability.
• the semiconductor element may be any known semiconductor element, and examples thereof include transistors and diodes. Further, examples of the semiconductor element include a light emitting element such as an LED.
• the type of light emitting device is not particularly limited, and examples thereof include those in which a nitride semiconductor such as InN, AlN, GaN, InGaN, AlGaN, and InGaAlN is formed as a light emitting layer on a substrate by the MOBVC method or the like. Be done.
• the element support member include a support member made of a material such as copper, copper-plated copper, PPF (preplating lead frame), glass epoxy, and ceramics.
• the semiconductor element can be bonded to a base material that has not been metal-plated.
• the semiconductor device thus obtained has a dramatically improved connection reliability with respect to the temperature cycle after mounting as compared with the conventional one. Further, since the electric resistance value is sufficiently small and the change with time is small, there is an advantage that the output does not decrease with time even when driven for a long time and has a long life.
• the heat generating member may be the above-mentioned semiconductor element or a member having the semiconductor element, or may be another heat generating member.
• Examples of the heat generating member other than the semiconductor element include an optical pickup and a power transistor.
• examples of the heat radiating member include a heat sink and a heat spreader.
• the heat generated by the heat radiating member can be efficiently discharged from the heat radiating member to the outside, and the temperature of the heat generating member rises. Can be suppressed.
• the heat generating member and the heat radiating member may be directly bonded to each other via a heat radiating member bonding material, or may be indirectly bonded by sandwiching another member having high thermal conductivity.
• the average particle size of the primary particles is 20 nm
• the average particle size of the secondary particles is 1.1 ⁇ m
• Silver particles having a maximum thermal expansion coefficient of + 5.5 ppm / ° C., a tap density of 5.4 g / cm 3 , and a specific surface area of 1.2 m 2 / g were obtained.
• FE-SEM field emission scanning electron microscope
• the average particle size of the primary particles is 20 nm
• the average particle size of the secondary particles is 2.6 ⁇ m
• Silver particles having a maximum thermal expansion coefficient of + 7.4 ppm / ° C., a tap density of 5.0 g / cm 3 , and a specific surface area of 1.0 m 2 / g were obtained.
• the silver particles obtained in Synthesis Examples 1 to 3 were evaluated by the following methods.
• Average particle size of primary particles To measure the average particle size of the primary particles, 2.8 mL of a 20 mass% hydrazine monohydrate aqueous solution was added dropwise to 1020 mL of the silver ammine complex aqueous solution obtained in each of the above synthetic examples over 60 seconds for solid-liquid separation. Then, the obtained solid substance was washed with pure water and dried in a vacuum atmosphere at 60 ° C. for 24 hours to use the obtained silver particles.
• the average particle size of the primary particles was measured as follows. Silver particles were embedded in Epoheat CLR (manufactured by Bühler) under curing conditions of 60 ° C. for 120 minutes.
• Plane milling was performed on this with a focused ion beam (FIB) device (JEM-9310FIB manufactured by JEOL Ltd.) under the conditions of a processing voltage of 4.0 kV, an inclination angle of 80 °, and a processing time of 1.5 minutes.
• the cross section of the obtained spherical silver particles was subjected to a field emission scanning electron microscope (FE-SEM) (JSM-6700F manufactured by JEOL Ltd.) under the conditions of an acceleration voltage of 1.0 kV and a magnification of 10,000 to 200,000 times.
• the circle-equivalent diameter of 200 silver particles was measured by observing with.
• the circle-equivalent diameters of the measured 200 silver particles were image-processed using image analysis software ImageJ (manufactured by the National Institutes of Health, USA) and calculated by averaging the numbers.
• the average particle size of the secondary particles is the particle size (50) at which the integrated volume is 50% in the particle size distribution measured using a laser diffraction type particle size distribution measuring device (manufactured by Shimadzu Corporation, trade name: SALAD-7500 nano). % Particle size D50).
• the tap density is the mass (unit) of silver particles in a container vibrated by a tap density measuring device (Tap-Pak Volumeter, manufactured by Thermo Scientific) based on ASTM standard test method B 527. : Measured as g / cm 3).
• the specific surface area was degassed at 60 ° C. for 10 minutes and then measured by the BET one-point method by nitrogen adsorption using a specific surface area measuring device (Monosorb, manufactured by Quanta Chrome).
• thermosetting resin composition [Examples 1 to 8, Comparative Examples 1 to 5] Each component was mixed according to the formulation shown in Table 1 and kneaded with a three-roll mill to obtain a thermosetting resin composition. The obtained thermosetting resin composition was evaluated by the method described later. The results are shown in Table 1. In Table 1, blanks indicate no compounding. The materials shown in Table 1 used in Examples and Comparative Examples are as follows.
• A1 Silver particles obtained in Synthesis Example 1 (average particle size of primary particles: 20 nm, average particle size of secondary particles: 1.1 ⁇ m, maximum coefficient of thermal expansion: +5.5 ppm / ° C., tap density: 5.4 g / cm 3 , specific surface area: 1.2 m 2 / g)
• A2 Silver particles obtained in Synthesis Example 2 (average particle size of primary particles: 20 nm, average particle size of secondary particles: 1.5 ⁇ m, maximum coefficient of thermal expansion: +7.0 ppm / ° C., tap density: 5.2 g / cm 3 , specific surface area: 1.1 m 2 / g)
• A3 Silver particles obtained in Synthesis Example 3 (average particle size of primary particles: 20 nm, average particle size of secondary particles: 2.6 ⁇ m, maximum coefficient of thermal expansion: + 7.4 ppm / ° C., tap density: 5.0 g / cm 3 , specific surface area: 1.0 m 2 / g
• thermosetting resin composition was applied to a glass substrate (thickness 1 mm) by a screen printing method so as to have a thickness of 30 ⁇ m, and cured at 190 ° C. for 60 minutes.
• the volume resistivity of the obtained wiring was measured by the 4-terminal method using the product name "MCP-T600” (manufactured by Mitsubishi Chemical Corporation).
• a TEG chip for thermal resistance having a gold-deposited layer provided on a 5 mm ⁇ 5 mm joint surface is mounted on a copper substrate whose surface is Ag-plated using a thermosetting resin composition, and cured at 190 ° C. for 60 minutes.
• the semiconductor package was manufactured.
• the thermal resistance of the joint portion of the semiconductor package was measured at room temperature (25 ° C.) using a thermal resistance measuring device "T3Star” manufactured by Mentor Graphics Japan Co., Ltd.
• a back gold silicon chip having a gold-deposited layer provided on an 8 mm ⁇ 8 mm joint surface is mounted on a copper substrate whose surface is Ag-plated using a thermosetting resin composition, and cured at 190 ° C. for 60 minutes.
• a semiconductor package was manufactured.
• the package warp of the semiconductor package was measured at room temperature (25 ° C.) according to the Japan Electronics and Information Technology Industries Association standard JEITA ED-7306 using a shadow moiré measuring device (Thermore AXP: manufactured by Akrometrix) as a measuring device.
• the maximum value in the direction perpendicular to the reference plane is A
• the minimum value is B
• thermosetting resin composition containing silver particles (aggregated particles) are all low in viscosity and excellent in dispersibility.
• the cured product of the resin composition has high thermal conductivity and little warpage.
• all of the semiconductor packages obtained by using the thermosetting resin composition have a small thermal resistance at the joint with the chip or the base material, and no peeling of the chip is observed after the thermal cycle test, resulting in excellent adhesion. Has sex. Therefore, by using the thermosetting resin composition of the present embodiment, a semiconductor device and electrical / electronic parts having excellent reliability can be obtained.
• Comparative Example 1 using a thermosetting resin composition containing silver particles that are not aggregates the cured product of the resin composition has a small warp and good thermal conductivity.
• Comparative Example 1 since the sintering of the silver particles and the chip or the base material is difficult to proceed with respect to the sintering of the silver particles, the thermal resistance of the joint portion between the chip or the base material is large. In addition, the specific surface area of the silver particles is small, and the adhesiveness in the thermal cycle test is good due to resin adhesion at the bonding interface. In Comparative Examples 2 and 3 using the thermosetting resin composition containing silver particles that are not aggregates, the warpage of the cured product of the resin composition is small. However, Comparative Examples 2 and 3 have poor sinterability, low thermal conductivity, and high volume resistance and thermal resistance.
• the amount of protective molecules contained in the resin composition was larger than that of the aggregated particles of the above example, and after sintering. Due to the volatilization of the protective molecules of the above, the volume shrinkage of the cured product of the resin composition becomes large, so that the warp is large. Further, since the ratio of the protective molecules in the resin composition is large, the absolute amount of silver is small, and the thermal conductivity is low as compared with the agglomerated particles in spite of the good sinterability. Further, since the nanoparticles have a large specific surface area, the viscosity of the resin composition is high, and the workability (dispensability) is inferior.

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• 2020
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