JP7320068B2 - 銀粒子の製造方法、熱硬化性樹脂組成物、半導体装置及び電気・電子部品 - Google Patents
銀粒子の製造方法、熱硬化性樹脂組成物、半導体装置及び電気・電子部品 Download PDFInfo
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- JP7320068B2 JP7320068B2 JP2021542935A JP2021542935A JP7320068B2 JP 7320068 B2 JP7320068 B2 JP 7320068B2 JP 2021542935 A JP2021542935 A JP 2021542935A JP 2021542935 A JP2021542935 A JP 2021542935A JP 7320068 B2 JP7320068 B2 JP 7320068B2
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- thermosetting resin
- silver
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- resin composition
- silver particles
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- 239000002245 particle Substances 0.000 title claims description 159
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- 229910052709 silver Inorganic materials 0.000 title claims description 132
- 239000004332 silver Substances 0.000 title claims description 132
- 229920001187 thermosetting polymer Polymers 0.000 title claims description 68
- 239000011342 resin composition Substances 0.000 title claims description 53
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title description 6
- 229920005989 resin Polymers 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 42
- 239000011163 secondary particle Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000011164 primary particle Substances 0.000 claims description 19
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- 239000004925 Acrylic resin Substances 0.000 claims description 5
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- 150000003839 salts Chemical class 0.000 description 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 4
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
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Description
[1](A)平均粒子径10~100nmの一次粒子が凝集した平均粒子径0.5~5.0μmの二次粒子からなる銀粒子と、(B)熱硬化性樹脂とを含む熱硬化性樹脂組成物。
[2]上記[1]に記載の熱硬化性樹脂組成物を含むダイアタッチ材料を介して半導体素子と基板とが接着されてなる半導体装置。
[3]上記[1]に記載の熱硬化性樹脂組成物を含む放熱部材接着用材料を介して放熱部材と発熱部材とが接着されてなる電気・電子部品。
[4]銀化合物を含む水溶液にアンモニア水を添加し、銀アンミン錯体溶液を得る工程と、前記工程で得られた銀アンミン錯体溶液中の銀アンミン錯体を還元性化合物によって還元し、銀粒子含有スラリーを得る工程と、を有する、平均粒子径10~100nmの一次粒子が凝集した平均粒子径0.5~5.0μmの二次粒子からなる銀粒子の製造方法。
本実施形態の熱硬化性樹脂組成物は、(A)平均粒子径10~100nmの一次粒子が凝集した平均粒子径0.5~5.0μmの二次粒子からなる銀粒子と、(B)熱硬化性樹脂とを含む。
(A)成分の銀粒子は、平均粒子径10~100nmの一次粒子が凝集した平均粒子径0.5~5.0μmの二次粒子からなる。
上記一次粒子の平均粒子径が10nm未満であると比表面積が増大し、熱硬化性樹脂組成物の作業性が低下するおそれがあり、100nmを超えると焼結性が低下するおそれがある。このような観点から、上記一次粒子の平均粒子径は、10~50nmであってもよく、20~50nmであってもよい。
上記一次粒子の平均粒子径は、以下のようにして測定することができ、具体的には実施例に記載の方法により測定することができる。
60℃で120分間の硬化条件で、エポキシ樹脂に銀粒子を埋め込む。これに、集束イオンビーム(FIB)装置で、加工電圧4.0kV、傾斜角度80°、加工時間1.5分間の条件で平面ミリングを行う。得られた球状の銀粒子の断面を、電界放出形走査電子顕微鏡(FE-SEM)で、加速電圧1.0kV、倍率10,000~200,000倍の条件で観察することにより200個の銀粒子の円相当直径を測定する。測定した200個の銀粒子の円相当直径を、画像解析ソフトを用いて画像処理し、個数平均することにより求める。
上記二次粒子の平均粒子径は、レーザー回折式粒度分布測定装置を用いて測定した粒度分布において積算体積が50%となる粒径(50%粒径D50)のことであり、具体的には実施例に記載の方法により測定することができる。
また、(A)成分の銀粒子は、中空粒子であってもよく、中実粒子であってもよいが、低温焼結性の観点から、中空粒子であってもよい。ここで、中空粒子とは、粒子内部に空隙が存在する粒子を意味する。(A)成分の銀粒子が中空粒子の場合、銀粒子の中央部に空隙が存在してもよい。また、中実粒子とは、粒子内部に実質的に空間の存在しない粒子を意味する。
上記銀粒子のタップ密度は、ASTM標準試験方法B 527に基づき、タップ密度測定器を用いて測定することができ、具体的には実施例に記載の方法により測定することができる。
上記銀粒子の比表面積は、比表面積測定装置を用いて、窒素吸着によるBET 1点法により測定することができ、具体的には実施例に記載の方法により測定することができる。
本開示において銀粒子の熱膨張係数は、ミニ油圧プレス(Specac社製)を用いて、Ag粉銀粒子に対して荷重200kgfを1分間加えて直径5mm、厚さ1mmの円柱型のペレット型試料を作製し、得られた当該試料を熱機械的分析(TMA)装置(セイコーインスツルーメント(株)製、商品名:TMA SS150)を使用して、常温(25℃)から昇温速度20℃/分で350℃まで昇温する条件にて熱膨張を測定した。そして、25℃のペレット長さを基準とした場合の熱膨張係数が、焼成温度領域である150℃~300℃の間の熱膨張係数として求めた。
また、正の線膨張係数を有する銀粒子の焼結開始温度は、収縮が開始するタイミング、つまり、熱膨張係数が最大になった時点の温度である。通常、その温度範囲は150~300℃の間である。
銀シンタリングペーストを構成する銀ナノ粒子は焼結による収縮が大きく、信頼性試験前後での熱抵抗の変化率が大きい。そのため収縮が小さく、信頼性試験前後での熱抵抗の変化率が小さい、銀シンタリングペーストが求められている。
(A)成分の銀粒子が、熱膨張係数を示すときの温度が上記範囲にあると、熱硬化性樹脂組成物は焼結時に銀粒子が膨張することにより銀粒子同士の接触の機会が増えるため、焼結性が良好となり高い熱伝導性が得られる。同時に、焼結時の体積収縮を相殺するように作用するため、熱抵抗の変化率が小さくなる。
(A)成分の銀粒子の製造方法は、銀化合物を含む水溶液にアンモニア水を添加し、銀アンミン錯体溶液を得る工程と、前記工程で得られた銀アンミン錯体溶液中の銀アンミン錯体を還元性化合物によって還元し、銀粒子含有スラリーを得る工程と、を有する。
本工程では、銀化合物を含む水溶液にアンモニア水を添加し、銀アンミン錯体溶液を得る。
銀化合物としては、硝酸銀、塩化銀、酢酸銀、シュウ酸銀、酸化銀等が挙げられる。銀化合物は、水への溶解度の観点から、硝酸銀、酢酸銀であってもよい。
本工程では、前記工程で得られた銀アンミン錯体溶液中の銀アンミン錯体を還元性化合物によって還元し、銀粒子含有スラリーを得る。
銀アンミン錯体を還元性化合物によって還元することにより、銀アンミン錯体中の銀粒子の一次粒子が凝集し、中央に空隙を有する二次粒子(中空粒子)が形成される。
(A)成分の銀粒子の製造方法は、前記銀粒子含有スラリーを得る工程の後に、さらに、前記工程で得られた銀粒子含有スラリーに、有機保護化合物を添加し、該銀粒子に保護基を導入する工程を有してもよい。
有機保護化合物としては、例えば、カルボン酸、アミン、アミド等が挙げられる。有機保護化合物は、分散性を高める観点から、カルボン酸であってもよい。
カルボン酸としては、例えば、ギ酸、酢酸、プロピオン酸、酪酸、吉草酸、ヘキサン酸、カプリル酸、オクチル酸、ノナン酸、カプリン酸、オレイン酸、ステアリン酸、イソステアリン酸等のモノカルボン酸;シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、ピメリン酸、スベリン酸、アゼライン酸、セバシン酸、ジグリコール酸等のジカルボン酸;安息香酸、フタル酸、イソフタル酸、テレフタル酸、サリチル酸、没食子酸等の芳香族カルボン酸;グリコール酸、乳酸、タルトロン酸、リンゴ酸、グリセリン酸、ヒドロキシ酪酸、酒石酸、クエン酸、イソクエン酸等のヒドロキシ酸等が挙げられる。
(B)熱硬化性樹脂は、一般に接着剤用途として使用される熱硬化性樹脂であれば特に限定されずに使用できる。上記熱硬化性樹脂は、液状樹脂であってもよく、室温(25℃)で液状である樹脂であってもよい。上記熱硬化性樹脂としては、シアネート樹脂、エポキシ樹脂、アクリル樹脂及びマレイミド樹脂から選ばれる少なくとも1種であってもよい。これらは単独で用いてもよく、2種以上を併用してもよい。
本実施形態の熱硬化性樹脂組成物は、作業性の観点から、さらに(C)希釈剤を含有してもよい。(C)希釈剤としては、例えば、ブチルカルビトール、酢酸セロソルブ、エチルセロソルブ、ブチルセロソルブ、ブチルセロソルブアセテート、ブチルカルビトールアセテート、ジエチレングリコールジメチルエーテル、ジアセトンアルコール、N-メチル-2-ピロリドン(NMP)、ジメチルホルムアミド、N,N-ジメチルアセトアミド(DMAc)、γ-ブチロラクトン、1,3-ジメチル-2-イミダゾリジノン、3,5-ジメチル-1-アダマンタンアミン(DMA)等が挙げられる。これらは単独で用いてもよく、2種以上を併用してもよい。
本実施形態の熱硬化性樹脂組成物は、以上の各成分の他、この種の組成物に一般に配合される、ゴム、シリコーン等の低応力化剤;カップリング剤;消泡剤;界面活性剤;顔料、染料等の着色剤;各種重合禁止剤;酸化防止剤;溶剤;その他の各種添加剤を、必要に応じて含有することができる。これらの各添加剤はいずれも1種を使用してもよく、2種以上を混合して使用してもよい。
本実施形態の熱硬化性樹脂組成物の硬化物の熱抵抗は、0.5K/W以下であってもよく、0.3K/W以下であってもよい。
上記熱伝導率及び熱抵抗は、それぞれ実施例に記載の方法により測定することができる。
上記粘度は、E型粘度計(3°コーン)を使用し、25℃で測定した値とする。具体的には実施例に記載の方法により測定することができる。
本実施形態の半導体装置は、上述の熱硬化性樹脂組成物を含むダイアタッチ材料を介して半導体素子と基板とが接着されてなる。また、本実施形態の電気・電子部品は、上述の熱硬化性樹脂組成物を含む放熱部材接着用材料を介して放熱部材と発熱部材とが接着されてなる。したがって、本実施形態の半導体装置及び電気・電子部品は、信頼性に優れる。
また、素子支持部材としては、銅、銅メッキ銅、PPF(プリプレーティングリードフレーム)、ガラスエポキシ、セラミックス等の材料で形成された支持部材が挙げられる。
[合成例1]
40gの硝酸銀を10Lのイオン交換水に溶解させ、硝酸銀水溶液を調製し、これに濃度26質量%のアンモニア水203mLを添加して撹拌することにより銀アンミン錯体水溶液を得た。この水溶液を液温10℃とし、撹拌しながら20質量%のヒドラジン一水和物水溶液28mLを60秒間かけて滴下し、銀粒子を析出させ、銀粒子含有スラリーを得た。このスラリー中に、銀量に対して1質量%のオレイン酸を加え10分間撹拌した。このスラリーを濾過し、濾物を、水洗、メタノール洗浄を行い、60℃、24時間真空雰囲気で乾燥して、一次粒子の平均粒子径:20nm、二次粒子の平均粒子径:1.1μm、最大熱膨張係数:+5.5ppm/℃、タップ密度:5.4g/cm3、比表面積:1.2m2/gの銀粒子を得た。
なお、得られた銀粒子の断面を電界放出形走査電子顕微鏡(FE-SEM)(JEOL社製のJSM-6700F)で観察したところ、該銀粒子は、中央に空隙を有する中空粒子であることを確認した。
40gの硝酸銀を10Lのイオン交換水に溶解させ、硝酸銀水溶液を調製し、これに濃度26質量%のアンモニア水203mLを添加して撹拌することにより銀アンミン錯体水溶液を得た。この水溶液を液温10℃とし、撹拌しながら20質量%のヒドラジン一水和物水溶液18mLを60秒間かけて滴下し、銀粒子を析出させ、銀粒子含有スラリーを得た。このスラリー中に、銀量に対して1質量%のオレイン酸を加え10分間撹拌した。このスラリーを濾過し、濾物を水洗、メタノール洗浄を行い、60℃、24時間真空雰囲気で乾燥して、一次粒子の平均粒子径:20nm、二次粒子の平均粒子径:1.5μm、最大熱膨張係数:+7.0ppm/℃、タップ密度:5.2g/cm3、比表面積:1.1m2/gの銀粒子を得た。
40gの硝酸銀を10Lのイオン交換水に溶解させ、硝酸銀水溶液を調製し、これに濃度26質量%のアンモニア水203mLを添加して撹拌することにより銀アンミン錯体水溶液を得た。この水溶液を液温10℃とし、撹拌しながら20質量%のヒドラジン一水和物水溶液12mLを60秒間かけて滴下し、銀粒子を析出させ、銀粒子含有スラリーを得た。このスラリー中に、銀量に対して1質量%のオレイン酸を加え10分間撹拌した。このスラリーを濾過し、濾物を、水洗、メタノール洗浄を行い、60℃、24時間真空雰囲気で乾燥して、一次粒子の平均粒子径:20nm、二次粒子の平均粒子径:2.6μm、最大熱膨張係数:+7.4ppm/℃、タップ密度:5.0g/cm3、比表面積:1.0m2/gの銀粒子を得た。
[一次粒子の平均粒子径]
一次粒子の平均粒子径の測定には、上記各合成例で得られた銀アンミン錯体水溶液1020mLに20質量%のヒドラジン一水和物水溶液2.8mLを60秒間かけて滴下して、固液分離し、得られた固形物を純水で洗浄し、60℃、24時間真空雰囲気で乾燥して得られた銀粒子を用いた。
上記一次粒子の平均粒子径は、以下のようにして測定した。
60℃で120分間の硬化条件で、エポヒートCLR(ビューラー社製)に銀粒子を埋め込んだ。これに、集束イオンビーム(FIB)装置(JEOL社製のJEM-9310FIB)で、加工電圧4.0kV、傾斜角度80°、加工時間1.5分間の条件で平面ミリングを行った。得られた球状の銀粒子の断面を、電界放出形走査電子顕微鏡(FE-SEM)(JEOL社製のJSM-6700F)で、加速電圧1.0kV、倍率10,000~200,000倍の条件で観察することにより200個の銀粒子の円相当直径を測定した。測定した200個の銀粒子の円相当直径を、画像解析ソフトImageJ(アメリカ国立衛生研究所製)を用いて画像処理し、個数平均することにより求めた。
二次粒子の平均粒子径は、レーザー回折式粒度分布測定装置((株)島津製作所製、商品名:SALAD-7500nano)を用いて測定した粒度分布において積算体積が50%となる粒径(50%粒径D50)から求めた。
ミニ油圧プレス(Specac社製)を用いて、銀粒子に対して荷重200kgfを1分間加えて作製された直径5mm、厚さ1mmの円柱型のペレット型試料を得た。当該試料を熱機械的分析(TMA)装置(セイコーインスツルーメント(株)製、商品名:TMA SS150)を使用し、常温(25℃)から昇温速度20℃/分で350℃まで昇温する条件にて熱膨張を測定し、25℃のペレット長さ基準とした場合の熱膨張係数を求め、焼成温度領域である150℃~300℃の間において最大となる熱膨張係数を最大熱膨張係数とした。
タップ密度(TD)は、ASTM標準試験方法B 527に基づき、タップ密度測定器(Tap-Pak Volumeter、Thermo Scientific社製)にて、振動させた容器内の銀粒子の単位体積当たりの質量(単位:g/cm3)として測定した。
比表面積は、60℃で10分間脱気した後、比表面積測定装置(モノソーブ、カンタクローム(Quanta Chrome)社製)を用いて、窒素吸着によるBET 1点法により測定した。
表1の配合に従って各成分を混合し、3本ロールミルで混練し、熱硬化性樹脂組成物を得た。得られた熱硬化性樹脂組成物を後述の方法で評価した。その結果を表1に示す。なお、表1中、空欄は配合なしを表す。
実施例及び比較例で用いた表1に記載の各材料は、下記のとおりである。
・(A1):合成例1で得られた銀粒子(一次粒子の平均粒子径:20nm、二次粒子の平均粒子径:1.1μm、最大熱膨張係数:+5.5ppm/℃、タップ密度:5.4g/cm3、比表面積:1.2m2/g)
・(A2):合成例2で得られた銀粒子(一次粒子の平均粒子径:20nm、二次粒子の平均粒子径:1.5μm、最大熱膨張係数:+7.0ppm/℃、タップ密度:5.2g/cm3、比表面積:1.1m2/g)
・(A3):合成例3で得られた銀粒子(一次粒子の平均粒子径:20nm、二次粒子の平均粒子径:2.6μm、最大熱膨張係数:+7.4ppm/℃、タップ密度:5.0g/cm3、比表面積:1.0m2/g)
・TC-505C((株)徳力本店製、商品名、平均粒子径:1.93μm、最大熱膨張係数:-0.1ppm/℃、タップ密度:6.25g/cm3、比表面積:0.65m2/g)
・Ag-HWQ 1.5μm(福田金属箔粉工業(株)製、商品名、平均粒子径:1.8μm、最大熱膨張係数:-0.6ppm/℃、タップ密度:3.23g/cm3、比表面積:0.5m2/g)
・AgC-221PA(福田金属箔粉工業(株)製、商品名、平均粒子径:7.5μm、最大熱膨張係数:-0.1ppm/℃、タップ密度:5.7g/cm3、比表面積:0.3m2/g)
・DOWA Ag nano powder-1(DOWAエレクトロニクス(株)製、商品名、平均粒子径:20nm、最大熱膨張係数:-0.1ppm/℃)
・DOWA Ag nano powder-2(DOWAエレクトロニクス(株)製、商品名、平均粒子径:60nm、最大熱膨張係数:-0.1ppm/℃)
・エポキシ樹脂:(三菱化学(株)製、商品名、YL983U)
・アクリル樹脂(KJケミカルズ(株)製、商品名、HEAA(登録商標))
・ビスフェノールF(本州化学工業(株)製、商品名、ビスフェノールF)
・ブチルカルビトール(東京化成工業(株)製)
・イミダゾール(四国化成工業(株)製、商品名、キュアゾール 2P4MHZ-PW)
・ジクミルパーオキサイド(日本油脂(株)製、商品名、パークミル(登録商標)D)
[熱伝導率]
測定器:LFA-502(京都電子工業(株)製)
測定方法:レーザーフラッシュ法
JIS R 1611-1997に従い、上記測定器を用いて、レーザーフラッシュ法により熱硬化性樹脂組成物の硬化物の熱伝導率を測定した。
熱硬化性樹脂組成物を、ガラス基板(厚み1mm)にスクリーン印刷法により厚みが30μmとなるように塗布し、190℃、60分間で硬化させた。得られた配線を製品名「MCP-T600」(三菱化学(株)製)を用い4端子法にて体積抵抗率を測定した。
E型粘度計(東機産業(株)製、製品名:VISCOMETER-TV22、適用コーンプレート型ロータ:3°×R17.65)を用いて、温度25℃、回転数0.5rpmでの値を測定した。
E型粘度計(東機産業(株)製、製品名:VISCOMETER-TV22、適用コーンプレート型ロータ:3°×R17.65)を用い、温度25℃において、回転数0.5rpm及び2.5rpmにおける粘度をそれぞれ測定し、粘度比(0.5rpmで測定した粘度/2.5rpmで測定した粘度)で表した。
25℃の恒温槽内に熱硬化性樹脂組成物を放置した時の粘度が初期粘度の1.5倍以上増粘するまでの日数を測定した。
5mm×5mmの接合面に金蒸着層を設けた熱抵抗用TEGチップを、熱硬化性樹脂組成物を用いて、表面にAgめっきされた銅基板にマウントし、190℃、60分間で硬化させて半導体パッケージを作製した。メンター・グラフィックス・ジャパン(株)製の熱抵抗測定装置「T3Ster」を用いて、前記半導体パッケージの接合部の熱抵抗を室温(25℃)にて測定した。
8mm×8mmの接合面に金蒸着層を設けた裏面金シリコンチップを、熱硬化性樹脂組成物を用いて、表面にAgめっきされた銅基板にマウントし、190℃、60分間で硬化させて半導体パッケージを作製した。半導体パッケージのパッケージ反りは、測定装置として、シャドウモアレ測定装置(ThermoireAXP:Akrometrix製)を用いて、電子情報技術産業協会規格のJEITA ED-7306に準じて室温(25℃)にて測定した。具体的には、測定領域の基板面の全データの最小二乗法によって算出した仮想平面を基準面とし、その基準面から垂直方向の最大値をAとし、最小値をBとした時の、|A|+|B|の値(Coplanarity)をパッケージ反り値とした。
8mm×8mmの接合面に金蒸着層を設けた裏面金シリコンチップを、熱硬化性樹脂組成物を用いて、表面にAgめっきされた銅フレームにマウントし、190℃、60分間の加熱硬化(OV硬化)を行った。これに冷熱サイクル処理(-55℃から150℃まで昇温し、次いで、-55℃に冷却する操作を1サイクルとし、これを2000サイクル)を行い、処理後チップの剥離有無を超音波顕微鏡(FineSAT II、(株)日立パワーソリューションズ製)で観察し、下記の基準によって評価した。
(判定基準)
A:剥離なし
C:剥離あり
凝集体ではない銀粒子を含む熱硬化性樹脂組成物を用いた比較例1は、該樹脂組成物の硬化物の反りは小さく、熱伝導率は良好である。ところが、比較例1は銀粒子同士の焼結に対して、銀粒子とチップまたは基材との焼結が進行しづらいため、チップまたは基材との接合部の熱抵抗が大きい。また、銀粒子の比表面積が小さく、接合界面では樹脂接着により冷熱サイクル試験における接着性は良好である。
凝集体ではない銀粒子を含む熱硬化性樹脂組成物を用いた比較例2及び3は、いずれも該樹脂組成物の硬化物の反りは小さい。ところが、比較例2及び3は焼結性が悪く、熱伝導率が低く、体積抵抗及び熱抵抗が高い。
銀ナノ粒子を含む熱硬化性樹脂組成物を用いた比較例4及び5は、上記実施例の凝集粒子に比較して、該樹脂組成物中に含まれる保護分子の量が多く、焼結後の保護分子の揮発により、該樹脂組成物の硬化物の体積収縮が大きくなるため反りが大きい。また、上記樹脂組成物中の保護分子の比率が多いため銀の絶対量が少なく、焼結性が良好にも拘らず熱伝導率が上記凝集粒子に比較して低い。また、ナノ粒子のため比表面積が大きく、上記樹脂組成物の粘度が高くなり、作業性(ディスペンス性)に劣る。
Claims (8)
- (A)平均粒子径10~100nmの一次粒子が凝集した平均粒子径0.5~5.0μmの二次粒子からなる銀粒子と、(B)熱硬化性樹脂とを含み、前記(A)銀粒子は、粒子内部に空隙が存在する中空二次粒子である熱硬化性樹脂組成物。
- 前記(A)銀粒子は、タップ密度が4.0~7.0g/cm3であり、かつBET法により求めた比表面積が0.5~1.5m2/gである請求項1に記載の熱硬化性樹脂組成物。
- 前記(A)銀粒子は、150℃~300℃の間の熱膨張係数が正である請求項1または2に記載の熱硬化性樹脂組成物。
- 前記(B)熱硬化性樹脂の含有量が、前記(A)銀粒子100質量部に対して1~20質量部である請求項1~3のいずれか一項に記載の熱硬化性樹脂組成物。
- 前記(B)熱硬化性樹脂が、シアネート樹脂、エポキシ樹脂、アクリル樹脂及びマレイミド樹脂から選ばれる少なくとも1種である請求項1~4のいずれか一項に記載の熱硬化性樹脂組成物。
- さらに、(C)希釈剤を含有し、前記(A)銀粒子100質量部に対する前記(C)希釈剤の含有量が3~20質量部である請求項1~5のいずれか一項に記載の熱硬化性樹脂組成物。
- 請求項1~6のいずれか一項に記載の熱硬化性樹脂組成物を含むダイアタッチ材料を介して半導体素子と基板とが接着されてなる半導体装置。
- 請求項1~6のいずれか一項に記載の熱硬化性樹脂組成物を含む放熱部材接着用材料を介して放熱部材と発熱部材とが接着されてなる電気・電子部品。
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JP2012230866A (ja) | 2011-04-27 | 2012-11-22 | Dainippon Printing Co Ltd | 導電性ペースト |
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JP2012230866A (ja) | 2011-04-27 | 2012-11-22 | Dainippon Printing Co Ltd | 導電性ペースト |
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