WO2021029021A1 - 感光性樹脂組成物、感光性樹脂フィルム、多層プリント配線板及び半導体パッケージ、並びに多層プリント配線板の製造方法 - Google Patents
感光性樹脂組成物、感光性樹脂フィルム、多層プリント配線板及び半導体パッケージ、並びに多層プリント配線板の製造方法 Download PDFInfo
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- WO2021029021A1 WO2021029021A1 PCT/JP2019/031909 JP2019031909W WO2021029021A1 WO 2021029021 A1 WO2021029021 A1 WO 2021029021A1 JP 2019031909 W JP2019031909 W JP 2019031909W WO 2021029021 A1 WO2021029021 A1 WO 2021029021A1
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- Prior art keywords
- photosensitive resin
- group
- resin composition
- epoxy resin
- compound
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- 238000000034 method Methods 0.000 claims description 71
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 36
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- 125000004185 ester group Chemical group 0.000 claims description 25
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 23
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- 125000003118 aryl group Chemical group 0.000 description 6
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- RIRLUHWQUCXKAC-UHFFFAOYSA-N 7a-ethyl-4,5-dihydro-3ah-2-benzofuran-1,3-dione Chemical compound C1=CCCC2C(=O)OC(=O)C21CC RIRLUHWQUCXKAC-UHFFFAOYSA-N 0.000 description 2
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- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
- H05K3/287—Photosensitive compositions
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
- H01L2224/05089—Disposition of the additional element
- H01L2224/05093—Disposition of the additional element of a plurality of vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/429—Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4661—Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
Definitions
- the present invention relates to a photosensitive resin composition, a photosensitive resin film, a multilayer printed wiring board and a semiconductor package, and a method for manufacturing a multilayer printed wiring board.
- thermosetting resin film is laminated on a conductor circuit, and the thermosetting resin film is cured by heating to form an "interlayer insulating layer".
- vias for interlayer connection are formed by laser processing, and desmear treatment and roughening treatment are performed by alkaline permanganate treatment or the like.
- the substrate is subjected to electroless copper plating treatment, a pattern is formed using a resist, and then electrolytic copper plating is performed to form a copper circuit layer.
- a copper circuit has been formed by peeling off the resist and performing flash etching of the electroless layer.
- an acid-modified vinyl group-containing epoxy resin, a photopolymerizable compound, a photopolymerization initiator, an inorganic filler, and a silane compound are contained, and the inorganic filler is contained.
- a method has been proposed in which a plurality of small-diameter vias are collectively formed by a photolithography method using a photosensitive resin composition having a content of 10 to 80% by mass (see, for example, Patent Document 2).
- Patent Document 2 has a problem of suppressing a decrease in adhesiveness with plated copper due to the use of a photosensitive resin composition instead of a conventional thermosetting resin composition as a material for an interlayer insulating layer or a surface protective layer. In addition to the above, it is said that the resolution of vias and the adhesion to the substrate and chip parts of silicon material are also issues, and these have been solved.
- the subject of the present invention is a photosensitive resin composition having excellent dielectric properties and a method for producing the same, a photosensitive resin film using the photosensitive resin composition, a multilayer printed wiring board and a method for producing the same, and a semiconductor package. Is to provide.
- the present invention relates to the following [1] to [16].
- [1] A photopolymerizable compound having an ethylenically unsaturated group and an acidic substituent,
- (B) Epoxy resin and
- [2] The above-mentioned [1], wherein the (A) photopolymerizable compound having an ethylenically unsaturated group and an acidic substituent contains an alicyclic structure represented by the following general formula (A-1). Photosensitive resin composition.
- R A1 represents an alkyl group having 1 to 12 carbon atoms, said alicyclic where optionally substituted on .m 1 in the structure is an integer of 0 to 6. * Are the other structures It is the binding site of.)
- [3] The photosensitive resin composition according to the above [1] or [2], wherein the (A) photopolymerizable compound having an ethylenically unsaturated group and an acidic substituent has an acid value of 20 to 200 mgKOH / g. Stuff.
- the (C) active ester compound is a compound having two or more active ester groups in one molecule, and the two or more active ester groups have a polyvalent carboxylic acid compound and a phenolic hydroxyl group.
- the equivalent ratio [epoxy group / acidic substituent] of the acidic substituent of the photopolymerizable compound having the (A) ethylenically unsaturated group and the acidic substituent to the epoxy group of the (B) epoxy resin is , 0.5 to 6.0, and the equivalent ratio [active ester group / epoxy group] of the epoxy group of the (B) epoxy resin to the active ester group of the (C) active ester compound is 0.01.
- the photosensitive resin composition according to any one of the above [1] to [5], which is ⁇ 0.4.
- Resin composition [8] The above-mentioned [1] to [7], further comprising (E) an elastomer and, as the (E) elastomer, an elastomer having an ethylenically unsaturated group and an acidic substituent.
- Photosensitive resin composition [9] The photosensitive resin composition according to any one of the above [1] to [8], which further contains (F) a photopolymerization initiator.
- Composition. [11] The photosensitive resin composition according to any one of the above [1] to [10], which further contains (H) a curing accelerator.
- a photosensitive resin film comprising the photosensitive resin composition according to any one of the above [1] to [12].
- a method for manufacturing a multilayer printed wiring board which comprises the following steps (1) to (4). Step (1): A step of laminating the photosensitive resin film according to the above [13] on one side or both sides of a circuit board. Step (2): A step of forming an interlayer insulating layer having vias by exposing and developing the photosensitive resin film laminated in the step (1). Step (3): A step of roughening the via and the interlayer insulating layer. Step (4): A step of forming a circuit pattern on the interlayer insulating layer.
- a photosensitive resin composition having excellent dielectric properties and a method for producing the same, a photosensitive resin film using the photosensitive resin composition, a multilayer printed wiring board and a method for producing the same, and a semiconductor package are provided. can do.
- FIG. 1 It is a schematic diagram which shows one aspect of the manufacturing process of the multilayer printed wiring board which uses the cured product of the photosensitive resin composition of this embodiment as at least one of a surface protective film and an interlayer insulating film.
- the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
- the content of each component in the photosensitive resin composition is present in the photosensitive resin composition when a plurality of substances corresponding to each component are present, unless otherwise specified. It means the total content of the plurality of substances.
- the present invention also includes aspects in which the items described in the present specification are arbitrarily combined.
- the term "resin component” means the total amount of components that do not contain an inorganic filler and a diluent that may be contained as needed, which will be described later.
- the "solid content” is a non-volatile content excluding volatile substances such as water and a solvent contained in the photosensitive resin composition, and when the resin composition is dried, it is used. , Indicates a component that remains without volatilization, and also includes liquid, candy-like and wax-like substances at room temperature around 25 ° C.
- (meth) acrylate means “acrylate or methacrylate”, and other similar terms have the same meaning.
- the photosensitive resin composition according to one embodiment of the present invention (hereinafter, may be simply referred to as the present embodiment) is (A) A photopolymerizable compound having an ethylenically unsaturated group and an acidic substituent, (B) Epoxy resin and (C) Active ester compound, It is a photosensitive resin composition containing.
- the above-mentioned components may be abbreviated as (A) component, (B) component, (C) component, etc., respectively, and other components may be abbreviated in the same manner. ..
- the photosensitive resin composition of the present embodiment has excellent dielectric properties and is suitable for via formation by photolithography (also referred to as photo via formation), one or more kinds selected from the group consisting of photo vias and interlayer insulating layers. It is suitable for the formation of. Therefore, the present invention also provides a photosensitive resin composition for forming a photovia composed of the photosensitive resin composition of the present embodiment and a photosensitive resin composition for an interlayer insulating layer composed of the photosensitive resin composition of the present embodiment. To do.
- the photosensitive resin composition of the present embodiment is suitable for a negative type photosensitive resin composition.
- each component that can be contained in the photosensitive resin composition will be described in detail.
- the photosensitive resin composition of the present embodiment contains a photopolymerizable compound having an ethylenically unsaturated group and an acidic substituent as the component (A).
- the component (A) one type may be used alone, or two or more types may be used in combination.
- the component (A) is a compound that exhibits photopolymerizability by having an ethylenically unsaturated group.
- the ethylenically unsaturated group contained in the component (A) include photopolymerization of a vinyl group, an allyl group, a propargyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadiimide group, a (meth) acryloyl group and the like.
- Examples include functional groups exhibiting sex. Among these, the (meth) acryloyl group is preferable from the viewpoint of reactivity and via resolution.
- the component (A) has an acidic substituent from the viewpoint of enabling alkaline development.
- the acidic substituent contained in the component (A) include a carboxy group, a sulfonic acid group, and a phenolic hydroxyl group. Among these, a carboxy group is preferable from the viewpoint of via resolution.
- the acid value of the component (A) is preferably 20 to 200 mgKOH / g, more preferably 40 to 180 mgKOH / g, still more preferably 70 to 150 mgKOH / g, and particularly preferably 90 to 120 mgKOH / g.
- the solubility of the photosensitive resin composition in a dilute alkaline solution tends to be excellent, and when it is at least the above upper limit value, the dielectric property of the cured product is excellent. There is a tendency.
- the acid value of the component (A) can be measured by the method described in Examples.
- two or more kinds of (A) components having different acid values may be used in combination, and in that case, the acid value of the load average of the acid values of the two or more kinds of (A) components is within any of the above ranges. Is preferable.
- the weight average molecular weight (Mw) of the component (A) is preferably 600 to 30,000, more preferably 800 to 25,000, and even more preferably 1,000 to 18,000.
- the weight average molecular weight is a value measured according to the following method. ⁇ Measurement method of weight average molecular weight> The weight average molecular weight was measured with the following GPC measuring device and measurement conditions, and the value converted using the standard polystyrene calibration curve was taken as the weight average molecular weight.
- a 5-sample set (“PStQuick MP-H” and “PStQuick B”, manufactured by Tosoh Corporation) was used as the standard polystyrene for preparing the calibration curve.
- GPC measuring device GPC device: High-speed GPC device "HCL-8320GPC", detector is differential refractometer or UV, manufactured by Tosoh Corporation Column: Column TSKgel SuperMultipore HZ-H (column length: 15 cm, column inner diameter: 4.6 mm), Tosoh stock Made by company (measurement conditions)
- Solvent tetrahydrofuran (THF) Measurement temperature: 40 ° C Flow rate: 0.35 ml / min Sample concentration: 10 mg / THF 5 ml Injection volume: 20 ⁇ l
- the component (A) preferably contains an alicyclic skeleton from the viewpoint of dielectric properties.
- an alicyclic skeleton having 5 to 20 ring-forming carbon atoms is preferable from the viewpoints of via resolution, adhesion strength with plated copper, and reliability of electrical insulation.
- An alicyclic skeleton having 5 to 18 carbon atoms is more preferable, an alicyclic skeleton having 6 to 18 ring-forming carbon atoms is further preferable, and an alicyclic skeleton having 8 to 14 ring-forming carbon atoms is particularly preferable.
- the alicyclic skeleton of numbers 8 to 12 is most preferable.
- the alicyclic skeleton is preferably composed of two or more rings, more preferably 2 to 4 rings, from the viewpoints of via resolution, adhesive strength with plated copper and reliability of electrical insulation. It is more preferably composed of three rings.
- the alicyclic skeleton having two or more rings include a norbornane skeleton, a decalin skeleton, a bicycloundecane skeleton, and a dicyclopentadiene skeleton.
- the dicyclopentadiene skeleton is preferable from the viewpoint of the resolution of vias, the adhesive strength with plated copper, and the reliability of electrical insulation.
- the component (A) preferably contains an alicyclic structure represented by the following general formula (A-1).
- R A1 represents an alkyl group having 1 to 12 carbon atoms, optionally .m 1 wherever substituted in the alicyclic structure is an integer of 0-6. * Are the other structures It is the binding site of.)
- the alkyl group having 1 to 12 carbon atoms represented by R A1 for example, a methyl group, an ethyl group, n- propyl group, an isopropyl group, n- butyl group, isobutyl group, t -Butyl group, n-pentyl group and the like can be mentioned.
- R A1 the alkyl group having 1 to 6 carbon atoms
- an alkyl group having 1 to 3 carbon atoms is more preferable
- a methyl group is further preferable.
- m 1 is an integer of 0 to 6, preferably an integer of 0 to 2, and more preferably 0.
- the plurality of RA 1s may be the same or different. Further, the plurality of RA1s may be substituted on the same carbon atom to the extent possible, or may be substituted on different carbon atoms.
- the component (A) is a compound obtained by modifying (a1) an epoxy resin with (a2) an ethylenically unsaturated group-containing organic acid from the viewpoint of via resolution and adhesion to plated copper [hereinafter, (A'). Sometimes referred to as an ingredient. ], It is preferable that the epoxy resin contains an acid-modified vinyl group obtained by reacting (a3) a saturated group or an unsaturated group-containing polybasic acid anhydride.
- the "acid modification" of the acid-modified vinyl group-containing epoxy resin means having an acidic substituent
- the "vinyl group” means an ethylenically unsaturated group
- the "epoxy resin” is used as a raw material.
- the acid-modified vinyl group-containing epoxy resin does not necessarily have to have an epoxy group, and may not have an epoxy group.
- preferred embodiments of the component (A) obtained from (a1) an epoxy resin, (a2) an ethylenically unsaturated group-containing organic acid, and (a3) a saturated group or an unsaturated group-containing polybasic acid anhydride will be described.
- the epoxy resin is preferably an epoxy resin having two or more epoxy groups.
- A1 As the epoxy resin, one type may be used alone, or two or more types may be used in combination.
- the epoxy resin is classified into a glycidyl ether type epoxy resin, a glycidyl amine type epoxy resin, a glycidyl ester type epoxy resin, and the like. Among these, a glycidyl ether type epoxy resin is preferable.
- the alicyclic skeleton of the epoxy resin having an alicyclic skeleton is described in the same manner as the alicyclic skeleton of the component (A) described above, and the preferred embodiment is also the same.
- an epoxy resin represented by the following general formula (A-2) is preferable.
- R A1 represents an alkyl group having 1 to 12 carbon atoms
- .m 1 may .R A2 wherever substituted in the alicyclic skeleton is represents an alkyl group having 1 to 12 carbon atoms
- m 2 is an integer of 0 to 3
- n is a number of 0 to 50.
- R A1 is the same as R A1 in the general formula (A1), which is also the same preferred embodiment.
- Examples of the alkyl group having 1 to 12 carbon atoms represented by RA2 in the general formula (A-2) include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and t-. Examples include a butyl group and an n-pentyl group.
- the alkyl group an alkyl group having 1 to 6 carbon atoms is preferable, an alkyl group having 1 to 3 carbon atoms is more preferable, and a methyl group is further preferable.
- M 2 in the general formula (A-2) is an integer of 0 to 3, preferably 0 or 1, more preferably 0.
- N in the general formula (A-2) represents the number of repetitions of the structural unit in parentheses, and is a number from 0 to 50. Since the epoxy resin is usually a mixture of structural units having different numbers of repetitions in parentheses, in that case, n is represented by the average value of the mixture. The number of n is preferably 0 to 30.
- epoxy resin having an alicyclic skeleton a commercially available product may be used, and examples of the commercially available product include XD-1000 (manufactured by Nippon Kayaku Co., Ltd., trade name) and EPICLON (registered trademark) HP-7200. (Product name, manufactured by DIC Corporation) and the like.
- novolak type epoxy resin examples include bisphenol novolak type epoxy resin, bisphenol F novolak type epoxy resin, bisphenol S novolak type epoxy resin and the like; phenol novolac type epoxy resin, cresol novolac type epoxy resin, biphenyl. Examples thereof include novolac type epoxy resin and naphthol novolac type epoxy resin.
- the novolak type epoxy resin an epoxy resin having a structural unit represented by the following general formula (A-3) is preferable.
- R A3 represents a hydrogen atom or a methyl group
- Y A1 each .2 one R A3 represents a hydrogen atom or a glycidyl group may be the same independently of one .2 which may be different Y A1 At least one of them shows a glycidyl group.
- R A3 from the viewpoint of adhesion with the resolution and plating copper vias, is preferably both hydrogen atoms.
- Y A1 is preferably either a glycidyl group.
- the number of structural units in the epoxy resin (a1) having a structural unit represented by the general formula (A-3) is 1 or more, preferably 10 to 100, and more preferably 15 to. The number is 80, more preferably 15-70. When the number of structural units is within the above range, the adhesive strength, heat resistance and insulation reliability tend to be improved.
- both the R A3 is a hydrogen atom
- those of Y A1 are all glycidyl groups, as EXA-7376 series (manufactured by DIC Corporation, trade name)
- R A3 is both are a methyl group
- those of Y A1 is both a glycidyl group
- EPON SU8 series Mitsubishi Chemical Co., Ltd., trade name
- Examples of the bisphenol type epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, 3,3', 5,5'-tetramethyl-4,4'-diglycidyloxydiphenylmethane and the like. Can be mentioned.
- Examples of the aralkyl type epoxy resin include phenol aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, and naphthol aralkyl type epoxy resin.
- epoxy resins include, for example, stillben type epoxy resin, naphthalene type epoxy resin, naphthylene ether type epoxy resin, biphenyl type epoxy resin, dihydroanthracene type epoxy resin, cyclohexanedimethanol type epoxy resin, trimethylol type epoxy resin, and the like.
- examples thereof include an alicyclic epoxy resin, an aliphatic chain epoxy resin, a heterocyclic epoxy resin, a spiro ring-containing epoxy resin, and a rubber-modified epoxy resin.
- an ethylenically unsaturated group-containing monocarboxylic acid is preferable.
- the ethylenically unsaturated group contained in the component (a2) include the same ethylenically unsaturated groups contained in the component (A).
- the component (a2) include acrylic acid, a dimer of acrylic acid, and acrylic acids such as methacrylic acid, ⁇ -flufurylacrylic acid, ⁇ -styrylacrylic acid, cinnamic acid, crotonic acid, and ⁇ -cyanoceramic acid.
- Semi-ester compounds that are reaction products of hydroxyl group-containing acrylates and dibasic acid anhydrides
- Semi-esters that are reaction products of vinyl group-containing monoglycidyl ethers or vinyl group-containing monoglycidyl esters and dibasic acid anhydrides include compounds.
- As the component (a2) one type may be used alone, or two or more types may be used in combination.
- the semiester compound is, for example, one or more ethylenically unsaturated group-containing compounds selected from the group consisting of a hydroxyl group-containing acrylate, a vinyl group-containing monoglycidyl ether, and a vinyl group-containing monoglycidyl ester, and a dibasic acid anhydride. And, it is obtained by reacting. In the reaction, it is preferable to react an ethylenically unsaturated group-containing compound with a dibasic acid anhydride in equimolar amounts.
- Examples of the hydroxyl group-containing acrylate used for the synthesis of the semiester compound include hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, and trimethylolpropane di. Examples thereof include (meth) acrylate, pentaerythritol tri (meth) acrylate, and dipentaerythritol penta (meth) acrylate.
- Examples of the vinyl group-containing monoglycidyl ether include glycidyl (meth) acrylate and the like.
- the dibasic acid anhydride used in the synthesis of the semiester compound may contain a saturated group or an unsaturated group.
- examples of the dibasic acid anhydride include succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, ethyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methylhexahydrophthalic anhydride. , Ethylhexahydrophthalic anhydride, phthalic anhydride and the like.
- the amount of the component (a2) used is preferably 0.6 to 1.05 equivalents, more preferably 1.05 equivalents, relative to 1 equivalent of the epoxy group of the component (a1). It is 0.7 to 1.02 equivalents, more preferably 0.8 to 1.0 equivalents.
- Glycol ethers such as glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether; esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate; aliphatic hydrocarbons such as octane and decane. ; Petroleum-based solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha can be mentioned. As the organic solvent, one type may be used alone, or two or more types may be used in combination.
- a catalyst for accelerating the reaction examples include amine-based catalysts such as triethylamine and benzylmethylamine; quaternary ammonium salt catalysts such as methyltriethylammonium chloride, benzyltrimethylammonium chloride, benzyltrimethylammonium bromide, and benzyltrimethylammonium iodide; triphenylphosphine. And the like, phosphine-based catalysts and the like. Among these, a phosphine-based catalyst is preferable, and triphenylphosphine is more preferable.
- the amount used is preferably 0.01 to 10 parts by mass, based on 100 parts by mass of the total of the components (a1) and (a2) from the viewpoint of obtaining an appropriate reaction rate. It is preferably 0.05 to 5 parts by mass, and more preferably 0.1 to 2 parts by mass.
- a polymerization inhibitor for the purpose of preventing polymerization during the reaction.
- the polymerization inhibitor include hydroquinone, methylhydroquinone, hydroquinone monomethyl ether, catechol, pyrogallol and the like.
- One type of polymerization inhibitor may be used alone, or two or more types may be used in combination.
- the amount used is preferably 0.01 to 1 part by mass, more preferably 0.02 to 0, based on 100 parts by mass of the total of the component (a1) and the component (a2). It is 8.8 parts by mass, more preferably 0.1 to 0.5 parts by mass.
- the reaction temperature of the component (a1) and the component (a2) is preferably 60 to 150 ° C, more preferably 80 to 120 ° C, still more preferably, from the viewpoint of uniformly proceeding the reaction while obtaining sufficient reactivity.
- the temperature is 90 to 110 ° C.
- the component (A') obtained by reacting the component (a1) and the component (a2) is the component (a1) when an ethylenically unsaturated group-containing monocarboxylic acid is used as the component (a2). It has a hydroxyl group formed by a ring-opening addition reaction between the epoxy group of (a2) and the carboxy group of the component (a2).
- the component (A') with the component (a3) by further reacting the component (A') with the component (a3), the hydroxyl group of the component (A') (including the hydroxyl group originally present in the component (a1)) and the component (a3)
- An acid-modified vinyl group-containing epoxy resin in which the acid anhydride group is semi-esterified can be obtained.
- the component (a3) may contain a saturated group or may contain an unsaturated group.
- Examples of the component (a3) include succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, ethyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methylhexahydrophthalic anhydride. Examples thereof include ethylhexahydrophthalic anhydride and itaconic anhydride. Among these, tetrahydrophthalic anhydride is preferable from the viewpoint of via resolution.
- the component (a3) one type may be used alone, or two or more types may be used in combination.
- the reaction temperature of the component (A') and the component (a3) is preferably 50 to 150 ° C, more preferably 60 to 120 ° C, still more preferably, from the viewpoint of uniformly proceeding the reaction while obtaining sufficient reactivity. Is 70 to 100 ° C.
- the content of the component (A) in the photosensitive resin composition of the present embodiment is not particularly limited, but is based on the total amount of the resin component of the photosensitive resin composition from the viewpoint of heat resistance, dielectric properties and chemical resistance. It is preferably 10 to 80% by mass, more preferably 20 to 60% by mass, and even more preferably 30 to 50% by mass.
- the photosensitive resin composition of the present embodiment contains an epoxy resin as the component (B). By containing the (B) epoxy resin, the photosensitive resin composition of the present embodiment can obtain excellent heat resistance in addition to improving the adhesiveness to the plated copper and the insulation reliability.
- the epoxy resin (B) one type may be used alone, or two or more types may be used in combination.
- the epoxy resin is preferably an epoxy resin having two or more epoxy groups.
- Epoxy resins are classified into glycidyl ether type epoxy resins, glycidyl amine type epoxy resins, glycidyl ester type epoxy resins and the like. Among these, a glycidyl ether type epoxy resin is preferable.
- Epoxy resins can be classified into various epoxy resins depending on the difference in the main skeleton.
- bisphenol type epoxy resin novolac type epoxy resin, aralkyl type epoxy resin, epoxy resin having an alicyclic skeleton, etc. It can be classified into other epoxy resins and the like.
- the bisphenol type epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, 3,3', 5,5'-tetramethyl-4,4'-diglycidyloxydiphenylmethane and the like. Can be mentioned.
- Examples of the novolak type epoxy resin include bisphenol novolak type epoxy resin, bisphenol F novolak type epoxy resin, bisphenol S novolak type epoxy resin and the like; phenol novolac type epoxy resin, cresol novolac type epoxy resin, biphenyl. Examples thereof include novolac type epoxy resin and naphthol novolac type epoxy resin.
- Examples of the aralkyl type epoxy resin include phenol aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, and naphthol aralkyl type epoxy resin.
- Examples of the epoxy resin having an alicyclic skeleton include a dicyclopentadiene type epoxy resin and the like.
- epoxy resins include, for example, stillben type epoxy resin, naphthalene type epoxy resin, naphthylene ether type epoxy resin, biphenyl type epoxy resin, dihydroanthracene type epoxy resin, cyclohexanedimethanol type epoxy resin, trimethylol type epoxy resin, and the like.
- examples thereof include an alicyclic epoxy resin, an aliphatic chain epoxy resin, a heterocyclic epoxy resin, a spiro ring-containing epoxy resin, and a rubber-modified epoxy resin.
- the (B) epoxy resin a bisphenol type epoxy resin, a novolac type epoxy resin, and an aralkyl type epoxy resin are preferable from the viewpoint of insulation reliability, dielectric properties, heat resistance, and adhesion to plated copper.
- 3', 5,5'-tetramethyl-4,4'-diglycidyloxydiphenylmethane, naphthol novolac type epoxy resin, biphenyl aralkyl type epoxy resin are more preferable.
- the epoxy resin it is preferable to use a bisphenol type epoxy resin and a novolac type epoxy resin or an aralkyl type epoxy resin in combination from the viewpoint of insulation reliability, dielectric properties, heat resistance and adhesion to plated copper.
- the epoxy resin contains a bisphenol type epoxy resin and a novolac type epoxy resin or an aralkyl type epoxy resin, the content ratio of both [bisphenol type epoxy resin / novolac type epoxy resin or aralkyl type epoxy resin] is particularly limited. However, it is preferably 1.0 to 4.0, more preferably 1.5 to 3.0, and even more preferably 2.0 to 2.5.
- the equivalent ratio [epoxy group / acidic substituent] of the acidic substituent of the component (A) to the epoxy group of the component (B) in the photosensitive resin composition of the present embodiment is not particularly limited, but the insulation reliability, From the viewpoint of dielectric properties, heat resistance, and adhesion to plated copper, it is preferably 0.5 to 6.0, more preferably 0.7 to 4.0, still more preferably 0.8 to 2.0, and particularly preferably. Is 0.9 to 1.2.
- the content of the component (B) in the photosensitive resin composition of the present embodiment is not particularly limited, but from the viewpoint of insulation reliability, dielectric properties, heat resistance and adhesion to plated copper, the photosensitive resin composition Based on the total amount of the resin component of the above, it is preferably 1 to 50% by mass, more preferably 5 to 30% by mass, and further preferably 10 to 20% by mass.
- the photosensitive resin composition of the present embodiment contains an active ester compound as the component (C).
- the photosensitive resin composition of the present embodiment can have a low dielectric loss tangent while maintaining good properties.
- the active ester compound (C) include those having a highly reactive ester group such as a phenol ester compound, a thiophenol ester compound, an N-hydroxyamine ester compound, and an ester compound of a heterocyclic hydroxy compound. These (C) active ester compounds may be linear or multi-branched. Further, the active ester compound (C) is preferably a compound having two or more ester groups in one molecule. As the active ester compound (C), one type may be used alone, or two or more types may be used in combination.
- the (C) active ester compound is a compound having two or more active ester groups in one molecule, and the two or more active ester groups are a (c1) polyvalent carboxylic acid compound and a (c2) phenolic hydroxyl group. It is preferable that it is an active ester group formed from a compound having.
- the active ester group formed from the (c1) polyvalent carboxylic acid compound and the (c2) compound having a phenolic hydroxyl group is a compound having a (c1) polyvalent carboxylic acid compound and a (c2) phenolic hydroxyl group. It is an ester bond formed by an esterification reaction (condensation reaction) with the phenolic hydroxyl group of.
- Examples of the polyvalent carboxylic acid compound (c1) include a compound having two or more aliphatic carboxy groups, a compound having two or more aromatic carboxy groups, and the like.
- Examples of the compound having two or more aliphatic carboxy groups include succinic acid, maleic acid, itaconic acid and the like.
- Examples of the compound having two or more aromatic carboxy groups include benzenedicarboxylic acids such as phthalic acid, isophthalic acid and terephthalic acid; benzenetricarboxylic acids such as trimesic acid; and benzenetetracarboxylic acids such as pyromellitic acid. ..
- C1 As the polyvalent carboxylic acid compound, one type may be used alone, or two or more types may be used in combination.
- Examples of the compound having a phenolic hydroxyl group include a compound having one, two, or three or more phenolic hydroxyl groups.
- Examples of the compound having one phenolic hydroxyl group include monophenols such as phenol, o-cresol, m-cresol and p-cresol; mononaphthols such as ⁇ -naphthol and ⁇ -naphthol; and hydroxybenzophenone. Be done.
- Examples of the compound having two phenolic hydroxyl groups include dihydroxybenzenes such as hydroquinone, resorcin, and catechol; bisphenol A, bisphenol F, bisphenol S, methylated bisphenol A, methylated bisphenol F, and methylated bisphenol S.
- Dihydroxynaphthalene such as 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene; phenolphthalin, dicyclopentadiene-type phenol resin having two phenolic hydroxyl groups and the like.
- the compound having three or more phenolic hydroxyl groups include trihydroxybenzophenone, benzenetriol, tetrahydroxybenzophenone, phenol novolac resin, and phenol aralkyl resin.
- a compound having one phenolic hydroxyl group and a compound having two phenolic hydroxyl groups are preferable, and monophenols, mononaphthols, bisphenols, and two phenolic hydroxyl groups are preferable.
- the dicyclopentadiene type phenol resin having is preferable.
- C2 As the compound having a phenolic hydroxyl group, one kind may be used alone, or two or more kinds may be used in combination.
- Monophenols have the following general formula (C-1), mononaphthols have the following general formula (C-2), bisphenols have the following general formula (C-3), and dicyclopentadiene type phenol having two phenolic hydroxyl groups.
- the resin may be represented by the following general formula (C-4).
- R C1 ⁇ R C4 are each independently the .p1 showing a monovalent represents an organic group .
- X C1 is a divalent organic group, an integer of 0 to 5, p2 is 0 ⁇ An integer of 7 is indicated, and p3 and p4 each independently indicate an integer of 0 to 4).
- Examples of the monovalent organic group represented by RC1 to RC4 in the general formulas (C-1) to (C-4) include an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms.
- a monovalent aliphatic hydrocarbon group such as an alkynyl group having 2 to 10 carbon atoms; and a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms.
- the aliphatic hydrocarbon group and the aromatic hydrocarbon group may or may not have a substituent.
- Examples of the divalent organic group represented by X C1 in the general formula (C-3) include an alkylene group having 1 to 10 carbon atoms, an alkylidene group having 2 to 10 carbon atoms, and an alkenylene group having 2 to 10 carbon atoms.
- a divalent aliphatic hydrocarbon group such as an alkynylene group having 2 to 10 carbon atoms; and a divalent aromatic hydrocarbon group having 6 to 12 carbon atoms.
- the aliphatic hydrocarbon group and the aromatic hydrocarbon group may or may not have a substituent.
- the active ester compound (C) is preferably represented by the following general formula (C-5).
- X represents a residue excluding the two carboxy groups of the (c1) polyvalent carboxylic acid compound
- Y is the phenolic hydroxyl group listed as the compound having the (c2) phenolic hydroxyl group.
- Z is one of the compounds having one phenolic hydroxyl group listed as the compound having the above (c2) phenolic hydroxyl group.
- P5 indicates a number of 0 to 10).
- the number of p5 in the general formula (C-5) is preferably 0 to 5, more preferably 0 to 4, and even more preferably 0 to 3.
- the ester group equivalent of the active ester compound (C) is not particularly limited, but is preferably 100 to 300 g / eq, more preferably 150 to 260 g / eq, and even more preferably 200 to 230 g / eq from the viewpoint of heat resistance and dielectric properties. eq.
- the (C) active ester compound can be produced by a known method, and is obtained, for example, by subjecting a (c1) polyvalent carboxylic acid compound and a (c2) compound having a phenolic hydroxyl group to a condensation reaction.
- the equivalent ratio [active ester group / epoxy group] of the epoxy group of the (B) epoxy resin to the active ester group of the (C) active ester compound in the photosensitive resin composition of the present embodiment has heat resistance and dielectric properties. From the viewpoint of the above, it is preferably 0.01 to 0.4, more preferably 0.1 to 0.3, and even more preferably 0.15 to 0.25. Further, in the photosensitive resin composition of the present embodiment, the equivalent ratio of the acidic substituent of the component (A) to the epoxy group of the component (B) in the photosensitive resin composition of the present embodiment [epoxy group / acidic substitution]. Epoxy group of (B) epoxy resin and (C) active ester group of active ester compound in the photosensitive resin composition of the present embodiment while satisfying a suitable range of [group]. It is preferable to satisfy a suitable range of [/ epoxy group].
- the content of the (C) active ester compound in the photosensitive resin composition of the present embodiment is not particularly limited, but is preferably based on the total amount of resin components of the photosensitive resin composition from the viewpoint of heat resistance and dielectric properties. It is 1 to 15% by mass, more preferably 2 to 10% by mass, and even more preferably 3 to 6% by mass.
- the photosensitive resin composition of the present embodiment further has a cross-linking agent having two or more ethylenically unsaturated groups as a component (D) and no acidic substituent [hereinafter, simply (D) cross-linking agent. It may be called. ] Is preferably contained.
- the cross-linking agent (D) reacts with the ethylenically unsaturated group contained in the component (A) to increase the cross-linking density of the cured product. Therefore, the photosensitive resin composition of the present embodiment tends to have further improved heat resistance and dielectric properties by containing the (D) cross-linking agent.
- the cross-linking agent one type may be used alone, or two or more types may be used in combination.
- Examples of the (D) cross-linking agent include a bifunctional monomer having two ethylenically unsaturated groups and a polyfunctional monomer having three or more ethylenically unsaturated groups.
- Examples of the ethylenically unsaturated group contained in the (D) cross-linking agent include the same ethylenically unsaturated group contained in the component (A), and the same is preferable.
- bifunctional monomer examples include aliphatic di (meth) acrylates such as trimethylolpropane di (meth) acrylate, polypropylene glycol di (meth) acrylate, and polyethylene glycol di (meth) acrylate; tricyclodecanedimethanol diacrylate.
- Di (meth) acrylate having an alicyclic skeleton such as 2,2-bis (4- (meth) acryloxipolyethoxypolypropoxyphenyl) propane, bisphenol A diglycidyl ether di (meth) acrylate and other aromatic di (meth) acrylates
- Examples include (meth) acrylate.
- di (meth) acrylate having an alicyclic skeleton is preferable
- tricyclodecanedimethanol diacrylate is more preferable, from the viewpoint of obtaining a lower dielectric loss tangent.
- polyfunctional monomer examples include a (meth) acrylate compound having a skeleton derived from trimethylolpropane such as trimethylolpropane tri (meth) acrylate; tetramethylolmethanetri (meth) acrylate and trimethylolmethanetetra (meth) acrylate.
- (Meta) acrylate compound having a skeleton derived from trimethylolmethane such as pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate or the like
- (meth) acrylate compound having a skeleton derived from pentaerythritol dipentaerythritol penta
- (meth) having a skeleton derived from ditrimethylolpropane such as ditrimethylolpropane tetra (meth) acrylate
- Acrylate compounds examples thereof include (meth) acrylate compounds having a skeleton derived from diglycerin.
- a (meth) acrylate compound having a skeleton derived from dipentaerythritol is preferable, and dipentaerythritol penta (meth) acrylate is more preferable.
- the above-mentioned "(meth) acrylate compound having a skeleton derived from XXX" (wherein, XXX is a compound name) means an esterified product of XXX and (meth) acrylic acid, and the esterified product Also includes compounds modified with an alkyleneoxy group.
- the content of the (D) cross-linking agent is not particularly limited, but from the viewpoint of heat resistance and dielectric properties, 100 mass of the component (A) It is preferably 5 to 70 parts by mass, more preferably 10 to 60 parts by mass, and further preferably 25 to 55 parts by mass with respect to the parts.
- the photosensitive resin composition of the present embodiment preferably further contains an elastomer as the component (E). Since the photosensitive resin composition of the present embodiment contains (E) elastomer, the adhesiveness with plated copper tends to be further improved. Further, the (E) elastomer has the effect of suppressing a decrease in flexibility and adhesiveness with plated copper due to internal strain (internal stress) of the cured product due to curing shrinkage of the component (A). .. (E) One type of elastomer may be used alone, or two or more types may be used in combination.
- the elastomer may have a reactive functional group at the molecular terminal or in the molecular chain.
- the reactive functional group include an acid anhydride group, an epoxy group, a hydroxyl group, a carboxy group, an amino group, an amide group, an isocyanato group, an acrylic group, a methacryl group and a vinyl group.
- an acid anhydride group, an epoxy group, a hydroxyl group, a carboxy group, an amino group and an amide group are preferable, and an acid anhydride group and an epoxy group are more preferable from the viewpoint of via resolution and adhesion to plated copper.
- an acid anhydride group is more preferred.
- the acid anhydride group examples include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadicic anhydride, glutaric anhydride, and the like. It is preferably an acid anhydride group derived from dimethylglutaric anhydride, diethylglutaric anhydride, succinic anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, etc., and an acid anhydride group derived from maleic anhydride. Is more preferable.
- the number of acid anhydride groups in one molecule is preferably 1 to 10, more preferably 1 to 6, from the viewpoint of the resolution and dielectric properties of vias. , More preferably 2-5.
- the photosensitive resin composition of the present embodiment preferably contains an elastomer having an ethylenically unsaturated group and an acidic substituent as the (E) elastomer.
- the acidic substituent and the ethylenically unsaturated group include the same as the acidic substituent and the ethylenically unsaturated group contained in the component (A).
- the elastoma (E) preferably has an acid anhydride group as an acidic substituent and a 1,2-vinyl group described later as an ethylenically unsaturated group.
- Examples of the (E) elastomer include polybutadiene-based elastomers, polyester-based elastomers, styrene-based elastomers, olefin-based elastomers, urethane-based elastomers, polyamide-based elastomers, acrylic-based elastomers, silicone-based elastomers, and derivatives of these elastomers. ..
- a polybutadiene-based elastomer is preferable from the viewpoint of improving the adhesiveness with the plated copper, the compatibility with the resin component, and the solubility.
- the polybutadiene-based elastomer preferably includes a structure consisting of a 1,4-trans form and a 1,4-cis form containing a 1,2-vinyl group.
- the polybutadiene-based elastoma is preferably a polybutadiene-based elastoma having an acid anhydride group modified with an acid anhydride from the viewpoint of via resolution, and is an acid anhydride derived from maleic anhydride. More preferably, it is a polybutadiene-based elastoma having a physical group.
- Polybutadiene-based elastomers are available as commercial products, and specific examples thereof include, for example, "POLYVEST (registered trademark) MA75", “POLYVEST (registered trademark) EP MA120” (all manufactured by Ebonic, trade name). Examples thereof include “Ricon (registered trademark) 130MA8", “Ricon (registered trademark) 131MA5", and “Ricon (registered trademark) 184MA6” (all manufactured by Clay Valley, trade name).
- the polybutadiene-based elastomer is a polybutadiene having an epoxy group [hereinafter, may be referred to as an epoxidized polybutadiene] from the viewpoint of adhesion to plated copper. ] May be.
- the epoxidized polybutadiene is preferably an epoxidized polybutadiene represented by the following general formula (E-1) from the viewpoint of adhesiveness and flexibility to plated copper.
- Y represents the number of structural units in square brackets and is an integer of 10 to 250.
- polyester-based elastomer examples include those obtained by polycondensing a dicarboxylic acid or a derivative thereof and a diol compound or a derivative thereof.
- dicarboxylic acid examples include aromatic dicarboxylic acids such as terephthalic acid, isophthalic acid, and naphthalenedicarboxylic acid, and aromatic dicarboxylic acids in which the hydrogen atom of these aromatic nuclei is substituted with a methyl group, an ethyl group, a phenyl group, or the like;
- aromatic dicarboxylic acids having 2 to 20 carbon atoms such as adipic acid, sebacic acid and dodecanedicarboxylic acid; and alicyclic dicarboxylic acids such as cyclohexanedicarboxylic acid.
- diol compound examples include aliphatic diols such as ethylene glycol, 1,3-propanediol, 1,4-butanediol, 1,6-hexanediol and 1,10-decanediol; 1,4-cyclohexanediol and the like.
- Aliphatic diols examples thereof include aromatic diols such as bisphenol A, bis (4-hydroxyphenyl) methane, bis (4-hydroxy-3-methylphenyl) propane, and resorcin.
- polyester-based elastomer a multi-block copolymer having an aromatic polyester (for example, polybutylene terephthalate) portion as a hard segment component and an aliphatic polyester (for example, polytetramethylene glycol) portion as a soft segment component is preferable.
- aromatic polyester for example, polybutylene terephthalate
- aliphatic polyester for example, polytetramethylene glycol
- the content of (E) elastomer is not particularly limited, but from the viewpoint of heat resistance and adhesion to plated copper, the photosensitive resin composition Based on the total amount of the resin component of the product, it is preferably 1 to 15% by mass, more preferably 2 to 10% by mass, and further preferably 3 to 7% by mass.
- the photosensitive resin composition of the present embodiment preferably further contains a photopolymerization initiator as the component (F).
- the photosensitive resin composition of the present embodiment tends to further improve the resolution of vias by containing (F) a photopolymerization initiator.
- F As the photopolymerization initiator, one type may be used alone, or two or more types may be used in combination.
- the photopolymerization initiator (F) is not particularly limited as long as it can photopolymerize an ethylenically unsaturated group, and can be appropriately selected from commonly used photopolymerization initiators.
- Examples of the photopolymerization initiator include benzoins such as benzoin, benzoin methyl ether, and benzoin isopropyl ether; acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, and the like.
- 1,1-dichloroacetophenone, 1-hydroxycyclohexylphenylketone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -1-butanone, 2-methyl-1- [4- (methylthio) phenyl] Acetophenones such as -2-morpholino-1-propanone, N, N-dimethylaminoacetophenone; 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylantraquinone, 1-chloroanthraquinone, 2-amylanthraquinone, 2- Anthracinones such as aminoanthraquinone; thioxanthones such as 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2-chlorothioxanthone, 2,4-diisopropylthioxanthone; acetophenone dimethyl
- acetophenones and thioxanthones are preferable, and 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-1-propanone and 2,4-diethylthioxanthone are more preferable.
- Acetophenones have the advantage of being less likely to volatilize and are less likely to be generated as outgas, and thioxanthones have the advantage of being photocurable in the visible light range.
- acetophenone and thioxanthone in combination, and 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-1-propanone and 2,4-diethylthioxanthone are used in combination. Is particularly preferable.
- the content of the (F) photopolymerization initiator is not particularly limited, but is based on the total amount of resin components of the photosensitive resin composition. It is preferably 0.01 to 20% by mass, more preferably 0.1 to 10% by mass, still more preferably 0.2 to 5% by mass, and particularly preferably 0.3 to 2% by mass.
- (F) When the content of the photopolymerization initiator is at least the above lower limit value, it tends to be possible to reduce the elution of the exposed portion during development, and when it is at least the above upper limit value, the heat resistance is improved. There is a tendency.
- the photosensitive resin composition of the present embodiment preferably further contains an inorganic filler as the component (G).
- the photosensitive resin composition of the present embodiment tends to obtain lower dielectric loss tangent and excellent low thermal expansion property by containing (G) an inorganic filler.
- the (G) inorganic filler one type may be used alone, or two or more types may be used in combination.
- Examples of the inorganic filler (G) include silica (SiO 2 ), alumina (Al 2 O 3 ), titania (TIO 2 ), tantalum oxide (Ta 2 O 5 ), zirconia (ZrO 2 ), and silicon nitride (Si).
- the (G) inorganic filler may be surface-treated with a coupling agent such as a silane coupling agent from the viewpoint of improving the dispersibility in the photosensitive resin composition.
- a coupling agent such as a silane coupling agent from the viewpoint of improving the dispersibility in the photosensitive resin composition.
- the silane coupling agent include aminosilane-based coupling agents, epoxysilane-based coupling agents, phenylsilane-based coupling agents, alkylsilane-based coupling agents, alkenylsilane-based coupling agents, and alkynylsilane-based coupling agents.
- Haloalkylsilane-based coupling agent siloxane-based coupling agent, hydrosilane-based coupling agent, silazane-based coupling agent, alkoxysilane-based coupling agent, chlorosilane-based coupling agent, (meth) acrylic silane-based coupling agent, isocyanurate
- silane-based coupling agents examples include silane-based coupling agents, ureidosilane-based coupling agents, mercaptosilane-based coupling agents, sulfide silane-based coupling agents, and isocyanate silane-based coupling agents.
- the addition method may be a so-called integral blend treatment method in which the (G) inorganic filler is added to the photosensitive resin composition and then the coupling agent is added.
- the method may be a method in which the coupling agent is surface-treated in advance on the (G) inorganic filler before compounding by a dry method or a wet method.
- the average particle size of the inorganic filler (G) is preferably 0.01 to 5 ⁇ m, more preferably 0.05 to 3 ⁇ m, still more preferably 0.1 to 1 ⁇ m, and particularly preferably 0.1 to 1 ⁇ m, from the viewpoint of via resolution. It is 0.15 to 0.7 ⁇ m.
- the average particle size of the inorganic filler means the volume average particle size, and uses a submicron particle analyzer (manufactured by Beckman Coulter Co., Ltd., trade name: N5) in accordance with the international standard ISO13321. The particles dispersed in the solvent with a refractive index of 1.38 can be measured and determined as the particle diameter corresponding to the integrated value of 50% (volume basis) in the particle size distribution.
- the content thereof is not particularly limited, but is preferably 10 to 80% by mass based on the total solid content of the photosensitive resin composition. , More preferably 20 to 65% by mass, still more preferably 30 to 55% by mass, and particularly preferably 40 to 50% by mass.
- the content of the inorganic filler (G) is at least the above lower limit value, a lower dielectric loss tangent and a coefficient of thermal expansion tend to be obtained, and when it is at least the above upper limit value, better adhesion to plated copper is obtained. And the resolution of vias tends to be obtained.
- the photosensitive resin composition of the present embodiment preferably further contains a curing accelerator as the component (H).
- a curing accelerator By containing (H) a curing accelerator, the photosensitive resin composition of the present embodiment tends to be able to further improve the heat resistance, dielectric properties, etc. of the obtained cured product.
- the curing accelerator (H) one type may be used alone, or two or more types may be used in combination.
- Examples of the curing accelerator (H) include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-phenylimidazole, and 2-phenyl-4-methyl-5-hydroxy.
- Imidazole and its derivatives such as methylimidazole, isocyanate mask imidazole (addition reaction product of hexamethylenediisocyanate resin and 2-ethyl-4-methylimidazole); trimethylamine, N, N-dimethyloctylamine, N-benzyldimethylamine, pyridine, Tertiary amines such as N-methylmorpholin, hexa (N-methyl) melamine, 2,4,6-tris (dimethylaminophenol), tetramethylguanidine, m-aminophenol; tributylphosphine, triphenylphosphine, tris Organic phosphines such as -2-cyanoethy
- Tertiary ammonium salts the above-mentioned polybasic acid anhydrides; diphenyliodonium tetrafluoroborate, triphenylsulfonium hexafluoroantimonate, 2,4,6-triphenylthiopyrilium hexafluorophosphate and the like.
- imidazole and imidazole derivatives are preferable from the viewpoint of obtaining an excellent curing action.
- the photosensitive resin composition of the present embodiment contains (H) a curing accelerator
- the content thereof is not particularly limited, but from the viewpoint of further improving heat resistance and dielectric properties
- the photosensitive resin composition Based on the total amount of the resin component, it is preferably 0.01 to 10% by mass, more preferably 0.05 to 5% by mass, and further preferably 0.1 to 1% by mass.
- the photosensitive resin composition of the present embodiment preferably further contains an epoxy resin curing agent as the component (I).
- an epoxy resin curing agent By containing (I) an epoxy resin curing agent, the photosensitive resin composition of the present embodiment tends to be able to further improve the heat resistance, dielectric properties, etc. of the obtained cured product.
- One type of epoxy resin curing agent may be used alone, or two or more types may be used in combination.
- epoxy resin curing agent examples include guanamines such as acetguanamine and benzoguanamine; diaminodiphenylmethane, m-phenylenediamine, m-xylenediamine, diaminodiphenylsulphon, dicyandiamide, urea, urea derivative, melamine, and polybasic hydrazide.
- guanamines such as acetguanamine and benzoguanamine
- diaminodiphenylmethane m-phenylenediamine, m-xylenediamine, diaminodiphenylsulphon, dicyandiamide, urea, urea derivative, melamine, and polybasic hydrazide.
- Phenols such as; these organolates and / or epoxy adducts; amine complexes of boron trifluoride; ethyldiamino-S-triazine, 2,4-diamino-S-triazine, 2,4-diamino-6-kisilyl Triazine derivatives such as -S-triazine; polyphenols such as polyvinylphenol, polyvinylphenol bromide, phenol novolac, alkylphenol novolak, and triazine ring-containing phenol novolac resin can be mentioned.
- the photosensitive resin composition of the present embodiment contains (I) an epoxy resin curing agent
- the content thereof is not particularly limited, but from the viewpoint of further improving heat resistance and dielectric properties, the photosensitive resin composition Based on the total amount of the resin component of the above, it is preferably 0.01 to 10% by mass, more preferably 0.05 to 5% by mass, and further preferably 0.1 to 1% by mass.
- the photosensitive resin composition of the present embodiment may contain pigments such as phthalocyanine blue, phthalocyanine green, iodin green, diazo yellow, crystal violet, titanium oxide, carbon black, naphthalene black, etc.; Agent; Sensitizer such as 4,4'-bisdiethylaminobenzophenone; Foam stabilizer such as silicone compound; Various known and commonly used additives such as polymerization inhibitor, thickener, flame retardant and the like may be contained.
- the content of these (J) additives may be appropriately adjusted according to the respective purposes, but for each, it is preferably 0.01 to 5% by mass based on the total amount of the resin component of the photosensitive resin composition. It is more preferably 0.05 to 3% by mass, still more preferably 0.1 to 1% by mass.
- a diluent can be used in the photosensitive resin composition of the present embodiment, if necessary.
- an organic solvent or the like can be used as the diluent.
- the organic solvent include ketones such as methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene and tetramethylbenzene; methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether and dipropylene.
- Glycol ethers such as glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether; esters such as ethyl acetate, butyl acetate, propylene glycol monoethyl ether acetate, butyl cellosolve acetate and carbitol acetate; octane, decane Etc., such as aliphatic hydrocarbons; petroleum ethers, petroleum naphtha, hydrogenated petroleum naphtha, solvent naphtha and other petroleum-based solvents.
- One type of diluent may be used alone, or two or more types may be used in combination.
- the content of the diluent is such that the concentration of the total solid content in the photosensitive resin composition is preferably 30 to 90% by mass, more preferably 40 to 80% by mass, and further preferably 50 to 70% by mass. It may be selected as appropriate. By adjusting the amount of the diluent used within the above range, the coatability of the photosensitive resin composition is improved, and a higher-definition pattern can be formed.
- the photosensitive resin composition of the present embodiment can be obtained by kneading and mixing each component with a roll mill, a bead mill or the like.
- the photosensitive resin composition of the present embodiment may be used as a liquid or as a film.
- the method for applying the photosensitive resin composition of the present embodiment is not particularly limited, and examples thereof include a printing method, a spin coating method, a spray coating method, a jet dispensing method, an inkjet method, and a dip coating method.
- Various coating methods can be mentioned. Among these, the printing method and the spin coating method are preferable from the viewpoint of forming the photosensitive layer more easily.
- a film When used as a film, for example, it can be used in the form of a photosensitive resin film described later. In this case, a photosensitive layer having a desired thickness is formed by laminating it on a carrier film using a laminator or the like. can do. It is preferable to use it as a film because the manufacturing efficiency of the multilayer printed wiring board is high.
- the photosensitive resin film of the present embodiment comprises the photosensitive resin composition of the present embodiment, and is suitable for use in forming a photosensitive layer to be an interlayer insulating layer later.
- the photosensitive resin film of the present embodiment may be provided on a carrier film.
- the thickness (thickness after drying) of the photosensitive resin film (photosensitive layer) is not particularly limited, but is preferably 1 to 100 ⁇ m, more preferably 3 to 50 ⁇ m, and further, from the viewpoint of reducing the thickness of the multilayer printed wiring board. It is preferably 5 to 40 ⁇ m.
- the photosensitive resin film of the present embodiment is, for example, a known coating of the photosensitive resin composition of the present embodiment on a carrier film, such as a comma coater, a bar coater, a kiss coater, a roll coater, a gravure coater, and a die coater. It can be formed by coating and drying with an apparatus.
- a carrier film such as a comma coater, a bar coater, a kiss coater, a roll coater, a gravure coater, and a die coater. It can be formed by coating and drying with an apparatus.
- the carrier film include polyesters such as polyethylene terephthalate and polybutylene terephthalate; and polyolefins such as polypropylene and polyethylene.
- the thickness of the carrier film is preferably 5 to 100 ⁇ m, more preferably 10 to 60 ⁇ m, and even more preferably 15 to 45 ⁇ m.
- a protective film may be provided on the surface opposite to the surface in contact with the carrier film.
- a polymer film such as polyethylene or polypropylene can be used.
- a polymer film similar to the carrier film described above may be used, or a different polymer film may be used.
- a dryer using hot air drying, far infrared rays, or near infrared rays can be used.
- the drying temperature is preferably 60 to 150 ° C., more preferably 70 to 120 ° C., and even more preferably 80 to 100 ° C.
- the drying time is preferably 1 to 60 minutes, more preferably 2 to 30 minutes, and even more preferably 5 to 20 minutes.
- the content of the residual diluent in the photosensitive resin film after drying is preferably 3% by mass or less, more preferably 2% by mass or less, from the viewpoint of avoiding diffusion of the diluent in the manufacturing process of the multilayer printed wiring board. , More preferably 1% by mass or less.
- the photosensitive resin film of this embodiment is suitable as an interlayer insulating layer of a multilayer printed wiring board because it is excellent in via resolution, adhesion to plated copper, and insulation reliability. That is, the present invention also provides a photosensitive resin film for an interlayer insulating layer made of the photosensitive resin composition of the present embodiment.
- the multilayer printed wiring board of the present embodiment contains an interlayer insulating layer formed by using the photosensitive resin composition of the present embodiment or the photosensitive resin film of the present embodiment.
- the method for producing the multilayer printed wiring board of the present embodiment is not particularly limited as long as it has a step of forming an interlayer insulating layer using the photosensitive resin composition of the present embodiment.
- the following book It can be easily manufactured by the method for manufacturing a multilayer printed wiring board of the embodiment.
- the multilayer printed wiring board 100A can be manufactured, for example, by a manufacturing method including the following steps (1) to (4).
- Step (1) A step of laminating the photosensitive resin film of the present embodiment on one side or both sides of a circuit board [hereinafter, referred to as a laminating step (1)].
- Step (2) A step of forming an interlayer insulating layer having vias by exposing and developing the photosensitive resin film laminated in the step (1) [hereinafter, referred to as a photovia forming step (2)].
- Step (3) A step of roughening the via and the interlayer insulating layer [hereinafter, referred to as a roughening treatment step (3)].
- Step (4) A step of forming a circuit pattern on the interlayer insulating layer [hereinafter, referred to as a circuit pattern forming step (4)].
- the photosensitive resin film (photosensitive resin film for interlayer insulating layer) of the present embodiment is laminated on one side or both sides of a circuit board (board 101 having a circuit pattern 102) using a vacuum laminator.
- a vacuum laminator include a vacuum applicator manufactured by Nichigo Morton Co., Ltd., a vacuum pressurized laminator manufactured by Meiki Co., Ltd., a roll-type dry coater manufactured by Hitachi, Ltd., and a vacuum laminator manufactured by Hitachi Kasei Electronics Co., Ltd. And so on.
- the photosensitive resin film is pressed and laminated on the circuit board while being pressurized and heated so as to be in contact with the circuit board. can do.
- the photosensitive resin film and the circuit board are preheated as necessary, and then the crimping temperature is 70 to 130 ° C., the crimping pressure is 0.1 to 1.0 MPa, and the air pressure is 20 mmHg (26.7 hPa) or less. It can be carried out under reduced pressure, but is not particularly limited to this condition.
- the laminating method may be a batch method or a continuous method using a roll.
- the photosensitive resin film laminated on the circuit board is cooled to around room temperature to form the interlayer insulating layer 103.
- the carrier film may be peeled off here, or may be peeled off after exposure as described later.
- Photovia forming step (2) In the photovia forming step (2), at least a part of the photosensitive resin film laminated on the circuit board is exposed and then developed. By exposure, the portion irradiated with the active light is photocured to form a pattern.
- the exposure method is not particularly limited, and for example, a method of irradiating an active ray in an image form through a negative or positive mask pattern called artwork (mask exposure method) may be adopted, or LDI (Laser Direct Imaging) may be adopted.
- a method of irradiating an active light beam in an image shape may be adopted by a direct drawing exposure method such as an exposure method or a DLP (Digital Light Processing) exposure method.
- a known light source can be used as the light source of the active light.
- the amount of exposure is appropriately selected depending on the light source used, the thickness of the photosensitive layer, and the like. For example, in the case of ultraviolet irradiation from a high-pressure mercury lamp, when the thickness of the photosensitive layer is 1 to 100 ⁇ m, it is usually 10 to 1,000 mJ / cm. About 2 is preferable, and 15 to 500 mJ / cm 2 is more preferable.
- an interlayer insulating layer made of a photocured cured product is formed on the substrate by removing the uncured portion of the photosensitive layer from the substrate. If a carrier film is present on the photosensitive layer, the carrier film is removed, and then the unexposed portion is removed (developed).
- development methods wet development and dry development, and either of them may be adopted. However, wet development is widely used, and wet development can also be adopted in this embodiment. In the case of wet development, development is carried out by a known development method using a developer corresponding to the photosensitive resin composition. Examples of the developing method include methods using a dip method, a battle method, a spray method, brushing, slapping, scraping, rocking immersion, and the like.
- the spray method is preferable from the viewpoint of improving the resolution, and the high pressure spray method is more preferable among the spray methods.
- the development may be carried out by one kind of method, but may be carried out by combining two or more kinds of methods.
- the composition of the developing solution is appropriately selected according to the composition of the photosensitive resin composition. For example, an alkaline aqueous solution, an aqueous developer, an organic solvent developer and the like can be mentioned, and among these, an alkaline aqueous solution is preferable.
- post-UV cure with an exposure amount of about 0.2 to 10 J / cm 2 (preferably 0.5 to 5 J / cm 2 ) and about 60 to 250 ° C.
- the interlayer insulating layer may be further cured by performing post-heat curing at a temperature of (preferably 120 to 200 ° C.) as necessary, and it is preferable to do so.
- the interlayer insulating layer having the via 104 is formed.
- the shape of the via is not particularly limited, and the cross-sectional shape includes, for example, a quadrangle, an inverted trapezoid (the upper side is longer than the lower side), and the shape seen from the front (the direction in which the bottom of the via can be seen) is a circle. , Squares and the like.
- vias having an inverted trapezoidal cross-sectional shape can be formed, and in this case, the plating copper has a high tendency to attach to the via wall surface. Is preferable.
- the size (diameter) of the vias formed by this step can be less than 40 ⁇ m, and can be 35 ⁇ m or less or 30 ⁇ m or less, which is smaller than the size of the vias produced by laser processing. can do.
- the lower limit of the size (diameter) of the via formed by this step is not particularly limited, but may be 15 ⁇ m or more, or 20 ⁇ m or more.
- the size (diameter) of the via formed by this step is not limited to less than 40 ⁇ m, and may be arbitrarily selected in the range of, for example, 15 to 300 ⁇ m.
- the roughening treatment step (3) In the roughening treatment step (3), the surfaces of the via and the interlayer insulating layer are roughened with a roughening liquid. If smear is generated in the photovia forming step (2), the smear may be removed by the roughening solution.
- the roughening treatment and the removal of smear can be performed at the same time.
- the roughening solution include chromium / sulfuric acid roughening solution, alkaline permanganate roughening solution (for example, sodium permanganate roughening solution, etc.), sodium fluoride / chromium / sulfuric acid roughening solution, and the like. ..
- the roughening treatment uneven anchors are formed on the surfaces of the via and the interlayer insulating layer.
- the circuit pattern forming step (4) is a step of forming a circuit pattern on the interlayer insulating layer after the roughening treatment step (3).
- the formation of the circuit pattern is preferably carried out by a semi-additive process from the viewpoint of forming fine wiring.
- the semi-additive process forms the circuit pattern and conducts the vias.
- the via bottom, the via wall surface, and the entire surface of the interlayer insulating layer are subjected to electroless copper plating treatment after using a palladium catalyst or the like to perform the seed layer 105. To form.
- the seed layer is for forming a feeding layer for applying electrolytic copper plating, and is preferably formed with a thickness of about 0.1 to 2.0 ⁇ m. If the thickness of the seed layer is 0.1 ⁇ m or more, it tends to be possible to suppress a decrease in connection reliability during electrolytic copper plating, and if it is 2.0 ⁇ m or less, the seed layer between wirings is flash-etched. It is not necessary to increase the amount of etching at the time of etching, and there is a tendency that damage to the wiring during etching can be suppressed.
- the electroless copper plating treatment is carried out by depositing metallic copper on the surfaces of vias and the interlayer insulating layer by the reaction of copper ions and a reducing agent.
- a known method may be applied to the electroless plating treatment method and the electrolytic plating treatment method, and the method is not particularly limited.
- Commercially available products can be used as the electroless copper plating solution. Examples of commercially available products include "MSK-DK” manufactured by Atotech Japan Co., Ltd. and “Sulcup (registered trademark) PEA series” manufactured by Uemura Kogyo Co., Ltd. And so on.
- a dry film resist is thermocompression bonded onto the electroless copper plating with a roll laminator.
- the thickness of the dry film resist must be higher than the wiring height after electrolytic copper plating, and from this viewpoint, a dry film resist having a thickness of 5 to 30 ⁇ m is preferable.
- the dry film resist the "Fotech” series manufactured by Hitachi Kasei Co., Ltd. is used.
- the dry film resist is exposed through a mask on which a desired wiring pattern is drawn. The exposure can be carried out with the same apparatus and light source as those that can be used for forming vias on the photosensitive resin film.
- the dry film resist is developed using an alkaline aqueous solution to remove the unexposed portion to form the resist pattern 106. After that, if necessary, the work of removing the development residue of the dry film resist may be performed using plasma or the like. After development, copper circuit layer 107 is formed and via-filled by electrolytic copper plating.
- the dry film resist is peeled off using an alkaline aqueous solution or an amine-based stripper.
- the seed layer between the wirings is removed (flash etching). Flash etching is performed using an acidic solution such as sulfuric acid and hydrogen peroxide and an oxidizing solution. After flash etching, if necessary, remove palladium or the like adhering to the portion between the wirings. The removal of palladium can preferably be carried out using an acidic solution such as nitric acid or hydrochloric acid.
- a post-baking treatment is preferably performed.
- the post-baking process sufficiently heat-cures the unreacted thermosetting components, thereby improving insulation reliability, curing properties and adhesion to plated copper.
- the thermosetting conditions vary depending on the type of resin composition and the like, but it is preferable that the curing temperature is 150 to 240 ° C. and the curing time is 15 to 100 minutes.
- the post-baking process completes the manufacturing process of the multilayer printed wiring board by a single photovia method, and this process is repeated to manufacture the substrate according to the number of interlayer insulating layers required. Then, a solder resist layer 108 is preferably formed on the outermost layer.
- the method for manufacturing a multilayer printed wiring board for forming vias using the photosensitive resin composition of the present embodiment has been described above, but the photosensitive resin composition of the present embodiment is excellent in pattern resolution. Therefore, for example, it is also suitable for forming a cavity for incorporating a chip, a passive element, or the like.
- the cavity is preferably formed by, for example, in the above description of the multilayer printed wiring board, the drawing pattern when the photosensitive resin film is exposed to the pattern is formed so that a desired cavity can be formed. Can be done.
- the present invention also provides a semiconductor package in which a semiconductor element is mounted on a multilayer printed wiring board of the present embodiment.
- the semiconductor package of the present embodiment can be manufactured by mounting a semiconductor element such as a semiconductor chip or a memory at a predetermined position on the multilayer printed wiring board of the present embodiment and sealing the semiconductor element with a sealing resin or the like.
- the acid value was calculated from the amount of potassium hydroxide aqueous solution required to neutralize the resin obtained in each synthetic example.
- the photosensitive resin film that has been peeled off and exposed is placed on the above-mentioned copper-clad laminated substrate using a press-type vacuum laminator (manufactured by Meiki Co., Ltd., trade name "MVLP-500") under predetermined laminating conditions (
- a laminate having a photosensitive layer was obtained by laminating at a crimping pressure: 0.4 MPa, a press hot plate temperature: 80 ° C., a vacuuming time: 25 seconds, a laminating press time: 25 seconds, and an air pressure: 4 kPa or less).
- a mask on which a via pattern having an opening diameter of a predetermined size is formed opening mask diameter size: 5, 8, 10, 15, 20, 30, 40, 50, 60, 70, 80, 90, and 100 ⁇ m ⁇ .
- i-line exposure apparatus manufactured by Ushio Co., Ltd., product number "UX-2240SM-XJ-01"
- exposure was performed at an exposure amount such that the number of step tablet stages (ST) was 7.
- the unexposed portion was melt-developed by spray-developing with pressure.
- the photosensitive resin is exposed at an exposure amount of 2,000 mJ / cm 2 and then heated at 170 ° C. for 1 hour to form a photosensitive resin having a via pattern of a predetermined size on a copper-clad laminated substrate.
- a test piece having a cured product of the composition was prepared. The test piece was observed using a metallurgical microscope or a scanning electron microscope, and the aperture mask diameter of the smallest via pattern among the via patterns in which the aperture was confirmed was defined as the minimum aperture mask diameter. The smaller the minimum aperture mask diameter, the better the resolution of vias.
- Synthesis example 1 (Synthesis of Acid-Modified Vinyl Group-Containing Epoxy Resin A-1) 500 parts by mass of bisphenol F type epoxy resin (manufactured by DIC Co., Ltd., trade name "EXA-7376"), 72 parts by mass of acrylic acid, 0.5 parts by mass of hydroquinone, and 150 parts by mass of carbitol acetate were charged into a reaction vessel at 90 ° C. The mixture was dissolved by heating and stirring. Next, the obtained solution was cooled to 60 ° C., 2 parts by mass of benzyltrimethylammonium chloride was charged, and the mixture was heated to 100 ° C. and reacted until the acid value of the solution reached 1 mgKOH / g.
- Synthesis example 2 (Synthesis of Acid-Modified Vinyl Group-Containing Epoxy Resin A-2) 250 parts by mass of dicyclopentadiene type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name "XD-1000", epoxy resin having a structure represented by the above general formula (A-2)), 70 parts by mass of acrylic acid, 0.5 parts by mass of methylhydroquinone and 120 parts by mass of carbitol acetate were placed in a reaction vessel, and the mixture was dissolved by heating to 90 ° C. and stirring. Next, the obtained solution was cooled to 60 ° C., 2 parts by mass of triphenylphosphine was added, and the mixture was heated to 100 ° C.
- a polyethylene terephthalate film with a thickness of 16 ⁇ m (manufactured by Teijin Co., Ltd., trade name “G2-16”) is used as a carrier film, and the photosensitive resin composition prepared in each example is placed on the carrier film. The material was applied so that the film thickness after drying was 25 ⁇ m, and dried at 75 ° C. for 30 minutes using a hot air convection dryer to form a photosensitive resin film (photosensitive layer). Subsequently, a polyethylene film (manufactured by Tamapoli Co., Ltd., trade name "NF-15”) is attached as a protective film on the surface of the photosensitive resin film (photosensitive layer) opposite to the side in contact with the carrier film. Together, a photosensitive resin film was prepared by laminating a carrier film and a protective film.
- -Active ester compound C-1 An active ester compound having a dicyclopentadiene-type diphenol structure (manufactured by DIC Corporation, trade name "HPC-8000-65T", ester group equivalent 223 g / eq).
- -Active ester compound C-2 Polyarylate resin (manufactured by Unitica Co., Ltd., trade name "V-575", ester group equivalent: 210 g / eq, poly having an active ester group formed from dicarboxybenzene and bisphenols.
- Acrylate resin) -Active ester compound C-3 Polyarylate resin (manufactured by Unitica Co., Ltd., trade name "W-575", ester group equivalent: 220 g / eq, poly having an active ester group formed from dicarboxybenzene and bisphenols.
- Acrylate resin) -Active ester compound C-4 manufactured by DIC Corporation, trade name "EXB-8"
- Photopolymerization Initiator [(F) Photopolymerization Initiator] -Photopolymerization initiator 1: 2-methyl- [4- (methylthio) phenyl] morpholino-1-propanone (acetophenones) -Photopolymerization initiator 2: 2,4-diethylthioxanthone (thioxanthones)
- the photosensitive resin compositions of Examples 1 and 2 of the present embodiment have higher resolution (minimum aperture diameter) than the photosensitive resin compositions of Comparative Example 1 which do not contain the component (C). It can be seen that the dielectric loss tangent can be reduced while maintaining good results. Further, the photosensitive resin compositions of Reference Examples 1 and Examples 3 to 5 in Table 2 both have a low dielectric loss tangent, and among them, the photosensitive resin compositions of Examples 3 to 5 have a low dielectric loss tangent. It can be seen that a significantly low dielectric loss tangent can be achieved.
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Abstract
Description
従来のセミアディティブ工法では、例えば、(1)導体回路上に熱硬化性樹脂フィルムをラミネートし、該熱硬化性樹脂フィルムを加熱によって硬化させて「層間絶縁層」を形成する。(2)次に、層間接続用のビアをレーザ加工により形成し、アルカリ過マンガン酸処理等によってデスミア処理及び粗化処理を行う。(3)その後、基板に無電解銅めっき処理を施し、レジストを用いてパターン形成後、電気銅めっきを行うことにより、銅の回路層を形成する。(4)次いで、レジストを剥離し、無電解層のフラッシュエッチングを行うことにより、銅の回路が形成されてきた。
すなわち、本発明は、下記の[1]~[16]に関する。
[1](A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物、
(B)エポキシ樹脂、及び
(C)活性エステル化合物、
を含有する、感光性樹脂組成物。
[2]前記(A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物が、下記一般式(A-1)で表される脂環式構造を含む、上記[1]に記載の感光性樹脂組成物。
(式中、RA1は炭素数1~12のアルキル基を表し、前記脂環式構造中のどこに置換していてもよい。m1は0~6の整数である。*は他の構造への結合部位である。)
[3]前記(A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物の酸価が、20~200mgKOH/gである、上記[1]又は[2]に記載の感光性樹脂組成物。
[4]前記(B)エポキシ樹脂として、ビスフェノール型エポキシ樹脂及びアラルキル型エポキシ樹脂を含有する、上記[1]~[3]のいずれかに記載の感光性樹脂組成物。
[5]前記(C)活性エステル化合物が、1分子中に2個以上の活性エステル基を有する化合物であり、前記2個以上の活性エステル基が、多価カルボン酸化合物と、フェノール性水酸基を有する化合物と、から形成される活性エステル基である、上記[1]~[4]のいずれかに記載の感光性樹脂組成物。
[6]前記(A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物の酸性置換基と、前記(B)エポキシ樹脂のエポキシ基との当量比[エポキシ基/酸性置換基]が、0.5~6.0であり、前記(B)エポキシ樹脂のエポキシ基と、前記(C)活性エステル化合物の活性エステル基との当量比[活性エステル基/エポキシ基]が、0.01~0.4である、上記[1]~[5]のいずれかに記載の感光性樹脂組成物。
[7]さらに、(D)2個以上のエチレン性不飽和基を有し、酸性置換基を有さない架橋剤を含有する、上記[1]~[6]のいずれかに記載の感光性樹脂組成物。
[8]さらに、(E)エラストマを含有し、該(E)エラストマとして、エチレン性不飽和基及び酸性置換基を有するエラストマを含有する、上記[1]~[7]のいずれかに記載の感光性樹脂組成物。
[9]さらに、(F)光重合開始剤を含有する、上記[1]~[8]のいずれかに記載の感光性樹脂組成物。
[10]さらに、(G)無機充填材を、感光性樹脂組成物の固形分全量基準で、10~80質量%含有する、上記[1]~[9]のいずれかに記載の感光性樹脂組成物。
[11]さらに、(H)硬化促進剤を含有する、上記[1]~[10]のいずれかに記載の感光性樹脂組成物。
[12]フォトビア及び層間絶縁層からなる群から選択される1種以上の形成に用いられる、上記[1]~[11]のいずれかに記載の感光性樹脂組成物。
[13]上記[1]~[12]のいずれかに記載の感光性樹脂組成物からなる、感光性樹脂フィルム。
[14]上記[1]~[12]のいずれかに記載の感光性樹脂組成物、又は上記[13]に記載の感光性樹脂フィルムを用いて形成される層間絶縁層を含有してなる多層プリント配線板。
[15]上記[14]に記載の多層プリント配線板に半導体素子を搭載してなる半導体パッケージ。
[16]下記工程(1)~(4)を含む、多層プリント配線板の製造方法。
工程(1):上記[13]に記載の感光性樹脂フィルムを、回路基板の片面又は両面にラミネートする工程。
工程(2):前記工程(1)でラミネートされた感光性樹脂フィルムに対して露光及び現像することによって、ビアを有する層間絶縁層を形成する工程。
工程(3):前記ビア及び前記層間絶縁層を粗化処理する工程。
工程(4):前記層間絶縁層上に回路パターンを形成する工程。
また、本明細書における記載事項を任意に組み合わせた態様も本発明に含まれる。
また、本明細書において、「固形分」とは、感光性樹脂組成物に含まれる水及び溶媒等の揮発する物質を除いた不揮発分のことであり、該樹脂組成物を乾燥させた際に、揮発せずに残る成分を示し、また25℃付近の室温で液状、水飴状及びワックス状のものも含む。
本発明の一実施形態に係る(以下、単に本実施形態と称する場合がある。)の感光性樹脂組成物は、
(A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物、
(B)エポキシ樹脂、及び
(C)活性エステル化合物、
を含有する、感光性樹脂組成物である。
なお、本明細書において、上記成分はそれぞれ、(A)成分、(B)成分、(C)成分等と省略して称することがあり、その他の成分についても同様の略し方をすることがある。
なお、本実施形態の感光性樹脂組成物は、ネガ型感光性樹脂組成物に好適である。
以下、感光性樹脂組成物が含有し得る各成分について詳述する。
本実施形態の感光性樹脂組成物は、(A)成分として、エチレン性不飽和基及び酸性置換基を有する光重合性化合物を含有する。
(A)成分は、1種を単独で用いてもよく、2種以上を併用してもよい。
(A)成分が有するエチレン性不飽和基としては、例えば、ビニル基、アリル基、プロパルギル基、ブテニル基、エチニル基、フェニルエチニル基、マレイミド基、ナジイミド基、(メタ)アクリロイル基等の光重合性を示す官能基が挙げられる。これらの中でも、反応性及びビアの解像性の観点から、(メタ)アクリロイル基が好ましい。
(A)成分が有する酸性置換基としては、例えば、カルボキシ基、スルホン酸基、フェノール性水酸基等が挙げられる。これらの中でも、ビアの解像性の観点から、カルボキシ基が好ましい。
(A)成分の酸価は、好ましくは20~200mgKOH/g、より好ましくは40~180mgKOH/g、さらに好ましくは70~150mgKOH/g、特に好ましくは90~120mgKOH/gである。(A)成分の酸価が上記下限値以上であると、感光性樹脂組成物の希アルカリ溶液への溶解性が優れる傾向にあり、上記上限値以下であると、硬化物の誘電特性が優れる傾向にある。(A)成分の酸価は、実施例に記載の方法により測定することができる。
なお、酸価が異なる2種以上の(A)成分を併用してもよく、その場合、上記2種以上の(A)成分の酸価の荷重平均の酸価が、上記いずれかの範囲内となることが好ましい。
<重量平均分子量の測定方法>
重量平均分子量は、下記のGPC測定装置及び測定条件で測定し、標準ポリスチレンの検量線を使用して換算した値を重量平均分子量とした。また、検量線の作成は、標準ポリスチレンとして5サンプルセット(「PStQuick MP-H」及び「PStQuick B」、東ソー株式会社製)を用いた。
(GPC測定装置)
GPC装置:高速GPC装置「HCL-8320GPC」、検出器は示差屈折計又はUV、東ソー株式会社製
カラム :カラムTSKgel SuperMultipore HZ-H(カラム長さ:15cm、カラム内径:4.6mm)、東ソー株式会社製
(測定条件)
溶媒 :テトラヒドロフラン(THF)
測定温度 :40℃
流量 :0.35ml/分
試料濃度 :10mg/THF5ml
注入量 :20μl
(A)成分が有する脂環式骨格としては、ビアの解像性、めっき銅との接着強度及び電気絶縁信頼性の観点から、環形成炭素数5~20の脂環式骨格が好ましく、環形成炭素数5~18の脂環式骨格がより好ましく、環形成炭素数6~18の脂環式骨格がさらに好ましく、環形成炭素数8~14の脂環式骨格が特に好ましく、環形成炭素数8~12の脂環式骨格が最も好ましい。
また、上記脂環式骨格は、ビアの解像性、めっき銅との接着強度及び電気絶縁信頼性の観点から、2環以上からなることが好ましく、2~4環からなることがより好ましく、3環からなることがさらに好ましい。2環以上の脂環式骨格としては、例えば、ノルボルナン骨格、デカリン骨格、ビシクロウンデカン骨格、ジシクロペンタジエン骨格等が挙げられる。これらの中でも、ビアの解像性、めっき銅との接着強度及び電気絶縁信頼性の観点から、ジシクロペンタジエン骨格が好ましい。
同様の観点から、(A)成分は、下記一般式(A-1)で表される脂環式構造を含むものが好ましい。
m1は0~6の整数であり、0~2の整数が好ましく、0がより好ましい。
m1が2~6の整数である場合、複数のRA1はそれぞれ同一であってもよいし、異なっていてもよい。さらに、複数のRA1は、可能な範囲で同一炭素原子上に置換していてもよいし、異なる炭素原子上に置換していてもよい。
*は他の構造への結合部位であり、脂環式骨格上のいずれの炭素原子で結合されていてもよいが、下記一般式(A-1’)中の1又は2で示される炭素原子と、3又は4のいずれかで示される炭素原子にて結合されていることが好ましい。
以下、(a1)エポキシ樹脂、(a2)エチレン性不飽和基含有有機酸及び(a3)飽和基又は不飽和基含有多塩基酸無水物から得られる(A)成分の好適な態様について説明する。
(a1)エポキシ樹脂としては、2個以上のエポキシ基を有するエポキシ樹脂であることが好ましい。
(a1)エポキシ樹脂は、1種を単独で用いてもよく、2種以上を併用してもよい。
(a1)エポキシ樹脂は、グリシジルエーテルタイプのエポキシ樹脂、グリシジルアミンタイプのエポキシ樹脂、グリシジルエステルタイプのエポキシ樹脂等に分類される。これらの中でも、グリシジルエーテルタイプのエポキシ樹脂が好ましい。
脂環式骨格を有するエポキシ樹脂が有する脂環式骨格については、前述した(A)成分が有する脂環式骨格と同様に説明され、好ましい態様も同じである。
脂環式骨格を有するエポキシ樹脂としては、下記一般式(A-2)で表されるエポキシ樹脂が好ましい。
(式中、RA1は炭素数1~12のアルキル基を表し、上記脂環式骨格中のどこに置換していてもよい。RA2は炭素数1~12のアルキル基を表す。m1は0~6の整数、m2は0~3の整数である。nは0~50の数である。)
一般式(A-2)中のRA2が表す炭素数1~12のアルキル基としては、例えば、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、t-ブチル基、n-ペンチル基等が挙げられる。該アルキル基としては、炭素数1~6のアルキル基が好ましく、炭素数1~3のアルキル基がより好ましく、メチル基がさらに好ましい。
一般式(A-2)中のm1は一般式(A-1)中のm1と同じであり、好ましい態様も同じである。
一般式(A-2)中のm2は0~3の整数であり、0又は1が好ましく、0がより好ましい。
一般式(A-2)中のnは丸括弧内の構造単位の繰り返し数を表し、0~50の数である。通常、エポキシ樹脂は丸括弧内の構造単位の繰り返し数が異なるものの混合物となっているため、その場合、nはその混合物の平均値で表される。nとしては、0~30の数が好ましい。
ノボラック型エポキシ樹脂としては、例えば、ビスフェノールAノボラック型エポキシ樹脂、ビスフェノールFノボラック型エポキシ樹脂、ビスフェノールSノボラック型エポキシ樹脂等のビスフェノールノボラック型エポキシ樹脂;フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニルノボラック型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂等が挙げられる。
ノボラック型エポキシ樹脂としては、下記一般式(A-3)で表される構造単位を有するエポキシ樹脂が好ましい。
(式中、RA3は水素原子又はメチル基を示し、YA1はそれぞれ独立に水素原子又はグリシジル基を示す。2つのRA3はそれぞれ同一でもよいし、異なっていてもよい。2つのYA1のうちの少なくとも一方はグリシジル基を示す。)
一般式(A-3)で表される構造単位を有する(a1)エポキシ樹脂中の該構造単位の構造単位数は1以上の数であり、好ましくは10~100の数、より好ましくは15~80の数、さらに好ましくは15~70の数である。構造単位数が上記範囲内であると、接着強度、耐熱性及び絶縁信頼性が向上する傾向にある。
一般式(A-3)において、RA3がいずれも水素原子であり、YA1がいずれもグリシジル基のものは、EXA-7376シリーズ(DIC株式会社製、商品名)として、また、RA3がいずれもメチル基であり、YA1がいずれもグリシジル基のものは、EPON SU8シリーズ(三菱ケミカル株式会社製、商品名)として商業的に入手可能である。
アラルキル型エポキシ樹脂としては、例えば、フェノールアラルキル型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフトールアラルキル型エポキシ樹脂等が挙げられる。
その他のエポキシ樹脂としては、例えば、スチルベン型エポキシ樹脂、ナフタレン型エポキシ樹脂、ナフチレンエーテル型エポキシ樹脂、ビフェニル型エポキシ樹脂、ジヒドロアントラセン型エポキシ樹脂、シクロヘキサンジメタノール型エポキシ樹脂、トリメチロール型エポキシ樹脂、脂環式エポキシ樹脂、脂肪族鎖状エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂、ゴム変性エポキシ樹脂等が挙げられる。
(a2)エチレン性不飽和基含有有機酸としては、エチレン性不飽和基含有モノカルボン酸が好ましい。
(a2)成分が有するエチレン性不飽和基としては、(A)成分が有するエチレン性不飽和基として挙げられたものと同じものが挙げられる。
(a2)成分としては、例えば、アクリル酸、アクリル酸の二量体、メタクリル酸、β-フルフリルアクリル酸、β-スチリルアクリル酸、桂皮酸、クロトン酸、α-シアノ桂皮酸等のアクリル酸誘導体;水酸基含有アクリレートと二塩基酸無水物との反応生成物である半エステル化合物;ビニル基含有モノグリシジルエーテル又はビニル基含有モノグリシジルエステルと二塩基酸無水物との反応生成物である半エステル化合物などが挙げられる。
(a2)成分は、1種を単独で用いてもよく、2種以上を併用してもよい。
ビニル基含有モノグリシジルエーテルとしては、例えば、グリシジル(メタ)アクリレート等が挙げられる。
有機溶剤としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類;トルエン、キシレン、テトラメチルベンゼン等の芳香族炭化水素類;メチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールジエチルエーテル、トリエチレングリコールモノエチルエーテル等のグリコールエーテル類;酢酸エチル、酢酸ブチル、ブチルセロソルブアセテート、カルビトールアセテート等のエステル類;オクタン、デカン等の脂肪族炭化水素類;石油エーテル、石油ナフサ、水添石油ナフサ、ソルベントナフサ等の石油系溶剤などが挙げられる。有機溶剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
触媒を使用する場合、その使用量は、適度な反応速度を得る観点から、(a1)成分と(a2)成分との合計100質量部に対して、好ましくは0.01~10質量部、より好ましくは0.05~5質量部、さらに好ましくは0.1~2質量部である。
重合禁止剤を使用する場合、その使用量は、(a1)成分と(a2)成分との合計100質量部に対して、好ましくは0.01~1質量部、より好ましくは0.02~0.8質量部、さらに好ましくは0.1~0.5質量部である。
(a3)成分としては、飽和基を含有するものであってもよいし、不飽和基を含有するものであってもよい。(a3)成分としては、例えば、無水コハク酸、無水マレイン酸、テトラヒドロ無水フタル酸、無水フタル酸、メチルテトラヒドロ無水フタル酸、エチルテトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、エチルヘキサヒドロ無水フタル酸、無水イタコン酸等が挙げられる。これらの中でも、ビアの解像性の観点から、テトラヒドロ無水フタル酸が好ましい。(a3)成分は、1種を単独で用いてもよく、2種以上を併用してもよい。
本実施形態の感光性樹脂組成物は、(B)成分として、エポキシ樹脂を含有する。
本実施形態の感光性樹脂組成物は、(B)エポキシ樹脂を含有することで、めっき銅との接着性及び絶縁信頼性の向上に加えて、優れた耐熱性が得られる。
(B)エポキシ樹脂は、1種を単独で用いてもよく、2種以上を併用してもよい。
ビスフェノール型エポキシ樹脂としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、3,3’,5,5’-テトラメチル-4,4’-ジグリシジルオキシジフェニルメタン等が挙げられる。
ノボラック型エポキシ樹脂としては、例えば、ビスフェノールAノボラック型エポキシ樹脂、ビスフェノールFノボラック型エポキシ樹脂、ビスフェノールSノボラック型エポキシ樹脂等のビスフェノールノボラック型エポキシ樹脂;フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニルノボラック型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂などが挙げられる。
アラルキル型エポキシ樹脂としては、例えば、フェノールアラルキル型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフトールアラルキル型エポキシ樹脂等が挙げられる。
脂環式骨格を有するエポキシ樹脂としては、例えば、ジシクロペンタジエン型エポキシ樹脂等が挙げられる。
その他のエポキシ樹脂としては、例えば、スチルベン型エポキシ樹脂、ナフタレン型エポキシ樹脂、ナフチレンエーテル型エポキシ樹脂、ビフェニル型エポキシ樹脂、ジヒドロアントラセン型エポキシ樹脂、シクロヘキサンジメタノール型エポキシ樹脂、トリメチロール型エポキシ樹脂、脂環式エポキシ樹脂、脂肪族鎖状エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂、ゴム変性エポキシ樹脂等が挙げられる。
(B)エポキシ樹脂は、絶縁信頼性、誘電特性、耐熱性及びめっき銅との接着性の観点から、ビスフェノール型エポキシ樹脂と、ノボラック型エポキシ樹脂又はアラルキル型エポキシ樹脂とを併用することが好ましく、ビスフェノール型エポキシ樹脂及びアラルキル型エポキシ樹脂を含有することがより好ましく、3,3’,5,5’-テトラメチル-4,4’-ジグリシジルオキシジフェニルメタン及びビフェニルアラルキル型エポキシ樹脂を含有することがさらに好ましい。
(B)エポキシ樹脂として、ビスフェノール型エポキシ樹脂及びノボラック型エポキシ樹脂又はアラルキル型エポキシ樹脂を含有する場合、両者の含有比率[ビスフェノール型エポキシ樹脂/ノボラック型エポキシ樹脂又はアラルキル型エポキシ樹脂]は、特に限定されないが、好ましくは1.0~4.0、より好ましくは1.5~3.0、さらに好ましくは2.0~2.5である。
本実施形態の感光性樹脂組成物は、(C)成分として、活性エステル化合物を含有する。
本実施形態の感光性樹脂組成物は、(C)活性エステル化合物を含有することで、諸特性を良好に維持したまま、誘電正接を低くすることができる。
(C)活性エステル化合物としては、例えば、フェノールエステル化合物、チオフェノールエステル化合物、N-ヒドロキシアミンエステル化合物、複素環ヒドロキシ化合物のエステル化合物等の反応活性の高いエステル基を有するものが挙げられる。これらの(C)活性エステル化合物は、直鎖状であってもよく、多分岐状であってもよい。
また、(C)活性エステル化合物は、1分子中に2個以上のエステル基を有する化合物が好ましい。
(C)活性エステル化合物は、1種を単独で用いてもよく、2種以上を併用してもよい。
(c1)多価カルボン酸化合物と(c2)フェノール性水酸基を有する化合物とから形成される活性エステル基は、(c1)多価カルボン酸化合物が有するカルボキシ基と(c2)フェノール性水酸基を有する化合物が有するフェノール性水酸基とがエステル化反応(縮合反応)をすることで形成されるエステル結合である。
脂肪族カルボキシ基を2個以上有する化合物としては、例えば、コハク酸、マレイン酸、イタコン酸等が挙げられる。
芳香族カルボキシ基を2個以上有する化合物としては、例えば、フタル酸、イソフタル酸、テレフタル酸等のベンゼンジカルボン酸;トリメシン酸等のベンゼントリカルボン酸;ピロメリット酸等のベンゼンテトラカルボン酸などが挙げられる。
これらの中でも、耐熱性及び誘電特性の観点から、芳香族カルボキシ基を2個以上有する化合物が好ましく、ベンゼンジカルボン酸がより好ましい。
(c1)多価カルボン酸化合物は、1種を単独で用いてもよく、2種以上を併用してもよい。
フェノール性水酸基を1個有する化合物としては、例えば、フェノール、o-クレゾール、m-クレゾール、p-クレゾール等のモノフェノール類;α-ナフトール、β-ナフトール等のモノナフトール類;ヒドロキシベンゾフェノンなどが挙げられる。
フェノール性水酸基を2個有する化合物としては、例えば、ハイドロキノン、レゾルシン、カテコール等のジヒドロキシベンゼン類;ビスフェノールA、ビスフェノールF、ビスフェノールS、メチル化ビスフェノールA、メチル化ビスフェノールF、メチル化ビスフェノールS等のビスフェノール類;1,5-ジヒドロキシナフタレン、1,6-ジヒドロキシナフタレン、2,6-ジヒドロキシナフタレン等のジヒドロキシナフタレン類;フェノールフタリン、フェノール性水酸基を2個有するジシクロペンタジエン型フェノール樹脂などが挙げられる。
フェノール性水酸基を3個以上有する化合物としては、例えば、トリヒドロキシベンゾフェノン、ベンゼントリオール、テトラヒドロキシベンゾフェノン、フェノールノボラック樹脂、フェノールアラルキル樹脂等が挙げられる。
これらの中でも、耐熱性及び誘電特性の観点から、フェノール性水酸基を1個有する化合物、フェノール性水酸基を2個有する化合物が好ましく、モノフェノール類、モノナフトール類、ビスフェノール類、フェノール性水酸基を2個有するジシクロペンタジエン型フェノール樹脂が好ましい。
(c2)フェノール性水酸基を有する化合物は、1種を単独で用いてもよく、2種以上を併用してもよい。
上記一般式(C-3)中のXC1が示す2価の有機基としては、例えば、炭素数1~10のアルキレン基、炭素数2~10のアルキリデン基、炭素数2~10のアルケニレン基、炭素数2~10のアルキニレン基等の2価の脂肪族炭化水素基;炭素数6~12の2価の芳香族炭化水素基などが挙げられる。該脂肪族炭化水素基及び芳香族炭化水素基は、置換基を有していてもよく、有していなくてもよい。
(式中、Xは、上記(c1)多価カルボン酸化合物が有する2個のカルボキシ基を除く残基を示し、Yは、上記(c2)フェノール性水酸基を有する化合物として挙げられたフェノール性水酸基を2個有する化合物が有する2個のフェノール性水酸基を除く残基を示す。Zは、上記(c2)フェノール性水酸基を有する化合物として挙げられたフェノール性水酸基を1個有する化合物が有する1個のフェノール性水酸基を除く残基、又はフェノール性水酸基を2個有する化合物が有する1個のフェノール性水酸基を除く残基を示す。p5は、0~10の数を示す。)
また、本実施形態の感光性樹脂組成物は、本実施形態の感光性樹脂組成物中における(A)成分の酸性置換基と、(B)成分のエポキシ基の当量比[エポキシ基/酸性置換基]の好適な範囲を充足しつつ、本実施形態の感光性樹脂組成物中における(B)エポキシ樹脂のエポキシ基と、(C)活性エステル化合物の活性エステル基との当量比[活性エステル基/エポキシ基]の好適な範囲を充足することが好ましい。
本実施形態の感光性樹脂組成物は、さらに、(D)成分として、2個以上のエチレン性不飽和基を有し、酸性置換基を有さない架橋剤[以下、単に(D)架橋剤と称することがある。]を含有することが好ましい。(D)架橋剤は、(A)成分が有するエチレン性不飽和基と反応し硬化物の架橋密度を高めるものである。したがって、本実施形態の感光性樹脂組成物は、(D)架橋剤を含有することにより、耐熱性及び誘電特性がより向上する傾向にある。
(D)架橋剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
これらの中でも、より低い誘電正接を得るという観点から、脂環式骨格を有するジ(メタ)アクリレートが好ましく、トリシクロデカンジメタノールジアクリレートがより好ましい。
ここで、上記「XXX由来の骨格を有する(メタ)アクリレート化合物」(但し、XXXは化合物名である。)とは、XXXと(メタ)アクリル酸とのエステル化物を意味し、当該エステル化物には、アルキレンオキシ基で変性された化合物も包含される。
本実施形態の感光性樹脂組成物は、さらに、(E)成分として、エラストマを含有することが好ましい。本実施形態の感光性樹脂組成物は(E)エラストマを含有することで、めっき銅との接着性がより向上する傾向にある。また、(E)エラストマによって、上記(A)成分の硬化収縮による、硬化物内部の歪み(内部応力)に起因した、可とう性及びめっき銅との接着性の低下を抑制する効果が得られる。
(E)エラストマは、1種を単独で用いてもよく、2種以上を併用してもよい。
反応性官能基としては、例えば、酸無水物基、エポキシ基、水酸基、カルボキシ基、アミノ基、アミド基、イソシアナト基、アクリル基、メタクリル基、ビニル基等が挙げられる。これらの中でも、ビアの解像性及びめっき銅との接着性の観点から、酸無水物基、エポキシ基、水酸基、カルボキシ基、アミノ基、アミド基が好ましく、酸無水物基、エポキシ基がより好ましく、酸無水物基がさらに好ましい。
酸無水物基としては、例えば、無水フタル酸、無水マレイン酸、無水トリメリット酸、無水ピロメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、無水メチルナジック酸、無水ナジック酸、無水グルタル酸、無水ジメチルグルタル酸、無水ジエチルグルタル酸、無水コハク酸、メチルヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸等に由来する酸無水物基であることが好ましく、無水マレイン酸に由来する酸無水物基であることがより好ましい。
(E)エラストマが酸無水物基を有する場合、ビアの解像性及び誘電特性の観点から、1分子中に有する酸無水物基の数は、好ましくは1~10、より好ましくは1~6、さらに好ましくは2~5である。
酸性置換基及びエチレン性不飽和基としては、(A)成分が有する酸性置換基及びエチレン性不飽和基と同じものが挙げられる。これらの中でも、(E)エラストマは、酸性置換基として、上述の通り、酸無水物基を有し、エチレン性不飽和基として、後述する1,2-ビニル基を有するものが好ましい。
上記の通り、ポリブタジエン系エラストマは、ビアの解像性の観点から、酸無水物で変性されている、酸無水物基を有するポリブタジエン系エラストマであることが好ましく、無水マレイン酸に由来する酸無水物基を有するポリブタジエン系エラストマであることがより好ましい。
ポリブタジエン系エラストマは、市販品として入手可能であり、その具体例としては、例えば、「POLYVEST(登録商標)MA75」、「POLYVEST(登録商標)EP MA120」(以上、エボニック社製、商品名)、「Ricon(登録商標)130MA8」、「Ricon(登録商標)131MA5」、「Ricon(登録商標)184MA6」(以上、クレイバレー社製、商品名)等が挙げられる。
エポキシ化ポリブタジエンは、めっき銅との接着性及び柔軟性の観点から、下記一般式(E-1)で表されるエポキシ化ポリブタジエンであることが好ましい。
(式中、a、b及びcはそれぞれ、丸括弧内の構造単位の比率を表しており、aは0.05~0.40、bは0.02~0.30、cは0.30~0.80であり、さらに、a+b+c=1.00、且つ(a+c)>bを満たす。yは、角括弧内の構造単位の数を表し、10~250の整数である。)
めっき銅との接着性及び柔軟性の観点から、aは好ましくは0.10~0.30、bは好ましくは0.10~0.30、cは好ましくは0.40~0.80である。また、これと同様の観点から、yは好ましくは30~180の整数である。
上記一般式(E-1)において、a=0.20、b=0.20、c=0.60、及びy=10~250の整数となるエポキシ化ポリブタジエンの市販品としては、「エポリード(登録商標)PB3600」(株式会社ダイセル製)等が挙げられる。
ジカルボン酸としては、例えば、テレフタル酸、イソフタル酸、ナフタレンジカルボン酸等の芳香族ジカルボン酸及びこれらの芳香核の水素原子が、メチル基、エチル基、フェニル基等で置換された芳香族ジカルボン酸;アジピン酸、セバシン酸、ドデカンジカルボン酸等の炭素数2~20の脂肪族ジカルボン酸;シクロヘキサンジカルボン酸等の脂環式ジカルボン酸などが挙げられる。
ジオール化合物としては、例えば、エチレングリコール、1,3-プロパンジオール、1,4-ブタンジオール、1,6-ヘキサンジオール、1,10-デカンジオール等の脂肪族ジオール;1,4-シクロヘキサンジオール等の脂環式ジオール;ビスフェノールA、ビス(4-ヒドロキシフェニル)メタン、ビス(4-ヒドロキシ-3-メチルフェニル)プロパン、レゾルシン等の芳香族ジオールなどが挙げられる。
また、ポリエステル系エラストマとして、芳香族ポリエステル(例えば、ポリブチレンテレフタレート)部分をハードセグメント成分に、脂肪族ポリエステル(例えば、ポリテトラメチレングリコール)部分をソフトセグメント成分にしたマルチブロック共重合体が好適に挙げられる。マルチブロック共重合体は、ハードセグメントとソフトセグメントの種類、比率、分子量の違いにより様々なグレードのものがある。その具体例としては、「ハイトレル(登録商標)」(デュポン・東レ株式会社製)、「ペルプレン(登録商標)」(東洋紡績株式会社製)、「エスペル(登録商標)」(日立化成株式会社製)等が挙げられる。
本実施形態の感光性樹脂組成物は、さらに、(F)成分として、光重合開始剤を含有することが好ましい。本実施形態の感光性樹脂組成物は、(F)光重合開始剤を含有することで、ビアの解像性がより向上する傾向にある。
(F)光重合開始剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
(F)光重合開始剤としては、例えば、ベンゾイン、ベンゾインメチルエーテル、ベンゾインイソプロピルエーテル等のベンゾイン類;アセトフェノン、2,2-ジメトキシ-2-フェニルアセトフェノン、2,2-ジエトキシ-2-フェニルアセトフェノン、1,1-ジクロロアセトフェノン、1-ヒドロキシシクロヘキシルフェニルケトン、2-ベンジル-2-ジメチルアミノ-1-(4-モルホリノフェニル)-1-ブタノン、2-メチル-1-[4-(メチルチオ)フェニル]-2-モルホリノ-1-プロパノン、N,N-ジメチルアミノアセトフェノン等のアセトフェノン類;2-メチルアントラキノン、2-エチルアントラキノン、2-tert-ブチルアントラキノン、1-クロロアントラキノン、2-アミルアントラキノン、2-アミノアントラキノン等のアントラキノン類;2,4-ジメチルチオキサントン、2,4-ジエチルチオキサントン、2-クロロチオキサントン、2,4-ジイソプロピルチオキサントン等のチオキサントン類;アセトフェノンジメチルケタール、ベンジルジメチルケタール等のケタール類;ベンゾフェノン、メチルベンゾフェノン、4,4’-ジクロロベンゾフェノン、4,4’-ビス(ジエチルアミノ)ベンゾフェノン、ミヒラーズケトン、4-ベンゾイル-4’-メチルジフェニルサルファイド等のベンゾフェノン類;9-フェニルアクリジン、1,7-ビス(9,9’-アクリジニル)ヘプタン等のアクリジン類;2,4,6-トリメチルベンゾイルジフェニルホスフィンオキサイド等のアシルホスフィンオキサイド類;1,2-オクタンジオン-1-[4-(フェニルチオ)フェニル]-2-(O-ベンゾイルオキシム)、1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]エタノン1-(O-アセチルオキシム)、1-フェニル-1,2-プロパンジオン-2-[O-(エトキシカルボニル)オキシム]等のオキシムエステル類などが挙げられる。
本実施形態の感光性樹脂組成物は、さらに、(G)成分として、無機充填材を含有することが好ましい。本実施形態の感光性樹脂組成物は、(G)無機充填材を含有することで、より低い誘電正接及び優れた低熱膨張性が得られる傾向にある。
(G)無機充填材は、1種を単独で用いてもよく、2種以上を併用してもよい。
カップリング剤を使用する場合、その添加方式は、感光性樹脂組成物中に(G)無機充填材を配合した後、カップリング剤を添加する、いわゆるインテグラルブレンド処理方式であってもよいし、配合前の(G)無機充填材に対して予めカップリング剤を乾式又は湿式で表面処理する方式であってもよい。
(G)無機充填材は、平均粒径が異なる2種以上の無機充填材を併用してもよい。
(G)無機充填材の平均粒径は、体積平均粒子径を意味し、サブミクロン粒子アナライザ(ベックマン・コールター株式会社製、商品名:N5)を用いて、国際標準規格ISO13321に準拠して、屈折率1.38で、溶剤中に分散した粒子を測定し、粒度分布における積算値50%(体積基準)に相当する粒子径として求めることができる。
本実施形態の感光性樹脂組成物は、さらに、(H)成分として、硬化促進剤を含有することが好ましい。本実施形態の感光性樹脂組成物は、(H)硬化促進剤を含有することで、得られる硬化物の耐熱性、誘電特性等をより向上できる傾向にある。
(H)硬化促進剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
これらの中でも、優れた硬化作用を得るという観点から、イミダゾール、イミダゾール誘導体が好ましい。
本実施形態の感光性樹脂組成物は、さらに、(I)成分として、エポキシ樹脂硬化剤を含有することが好ましい。本実施形態の感光性樹脂組成物は、(I)エポキシ樹脂硬化剤を含有することで、得られる硬化物の耐熱性、誘電特性等をより向上できる傾向にある。
(I)エポキシ樹脂硬化剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
本実施形態の感光性樹脂組成物には、必要に応じて、フタロシアニンブルー、フタロシアニングリーン、アイオディングリーン、ジアゾイエロー、クリスタルバイオレット、酸化チタン、カーボンブラック、ナフタレンブラック等の顔料;メラミン等の接着助剤;4,4’-ビスジエチルアミノベンゾフェノン等の増感剤;シリコーン化合物等の整泡剤;重合禁止剤、増粘剤、難燃剤等の公知慣用の各種添加剤を含有させてもよい。
これらの(J)添加剤の含有量は、各々の目的に応じて適宜調整すればよいが、各々について、感光性樹脂組成物の樹脂成分全量基準で、好ましくは0.01~5質量%、より好ましくは0.05~3質量%、さらに好ましくは0.1~1質量%である。
本実施形態の感光性樹脂組成物には、必要に応じて希釈剤を使用することができる。希釈剤としては、例えば、有機溶剤等が使用できる。有機溶剤としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類;トルエン、キシレン、テトラメチルベンゼン等の芳香族炭化水素類;メチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールジエチルエーテル、トリエチレングリコールモノエチルエーテル等のグリコールエーテル類;酢酸エチル、酢酸ブチル、プロピレングリコールモノエチルエーテルアセテート、ブチルセロソルブアセテート、カルビトールアセテート等のエステル類;オクタン、デカン等の脂肪族炭化水素類;石油エーテル、石油ナフサ、水添石油ナフサ、ソルベントナフサ等の石油系溶剤などが挙げられる。希釈剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
ここで、本実施形態の感光性樹脂組成物は、液状として使用してもよいし、フィルム状として使用してもよい。
液状として使用する場合、本実施形態の感光性樹脂組成物の塗布方法は特に制限はないが、例えば、印刷法、スピンコート法、スプレーコート法、ジェットディスペンス法、インクジェット法、浸漬塗布法等の各種塗布方法が挙げられる。これらの中でも、感光層をより容易に形成する観点から、印刷法、スピンコート法が好ましい。
また、フィルム状として用いる場合は、例えば、後述する感光性樹脂フィルムの形態で用いることができ、この場合はラミネーター等を用いてキャリアフィルム上に積層することで所望の厚さの感光層を形成することができる。なお、フィルム状として使用する方が、多層プリント配線板の製造効率が高くなるために好ましい。
本実施形態の感光性樹脂フィルムは、本実施形態の感光性樹脂組成物からなるものであり、後に層間絶縁層となる感光層を形成する用途に好適である。
本実施形態の感光性樹脂フィルムは、キャリアフィルム上に設けられている態様であってもよい。
感光性樹脂フィルム(感光層)の厚さ(乾燥後の厚さ)は、特に限定されないが、多層プリント配線板の薄型化の観点から、好ましくは1~100μm、より好ましくは3~50μm、さらに好ましくは5~40μmである。
キャリアフィルムとしては、例えば、ポリエチレンテレフタレート、ポリブチレンテレフタレート等のポリエステル;ポリプロピレン、ポリエチレン等のポリオレフィンなどが挙げられる。キャリアフィルムの厚さは、好ましくは5~100μm、より好ましくは10~60μm、さらに好ましくは15~45μmである。
本実施形態の多層プリント配線板は、上記の本実施形態の感光性樹脂組成物又は本実施形態の感光性樹脂フィルムを用いて形成される層間絶縁層を含有してなるものである。本実施形態の多層プリント配線板は、本実施形態の感光性樹脂組成物を用いた層間絶縁層を形成する工程を有していればその製造方法には特に制限はなく、例えば、以下の本実施形態の多層プリント配線板の製造方法により容易に製造することができる。
多層プリント配線板100Aは、例えば、下記工程(1)~(4)を含む製造方法により製造することができる。
工程(1):本実施形態の感光性樹脂フィルムを、回路基板の片面又は両面にラミネートする工程[以下、ラミネート工程(1)と称する]。
工程(2):工程(1)でラミネートされた感光性樹脂フィルムに対して露光及び現像することによって、ビアを有する層間絶縁層を形成する工程[以下、フォトビア形成工程(2)と称する]。
工程(3):前記ビア及び前記層間絶縁層を粗化処理する工程[以下、粗化処理工程(3)と称する]。
工程(4):前記層間絶縁層上に回路パターンを形成する工程[以下、回路パターン形成工程(4)と称する]。
ラミネート工程(1)は、真空ラミネーターを用いて、本実施形態の感光性樹脂フィルム(層間絶縁層用感光性樹脂フィルム)を回路基板(回路パターン102を有する基板101)の片面又は両面にラミネートする工程である。真空ラミネーターとしては、例えば、ニチゴー・モートン株式会社製のバキュームアップリケーター、株式会社名機製作所製の真空加圧式ラミネーター、株式会社日立製作所製のロール式ドライコーター、日立化成エレクトロニクス株式会社製の真空ラミネーター等が挙げられる。
該ラミネートは、例えば、感光性樹脂フィルム及び回路基板を必要に応じて予備加熱してから、圧着温度70~130℃、圧着圧力0.1~1.0MPa、空気圧20mmHg(26.7hPa)以下の減圧下で実施することができるが、特にこの条件に制限されるものではない。また、ラミネートの方法は、バッチ式であっても、ロールでの連続式であってもよい。
最後に、回路基板にラミネートされた感光性樹脂フィルムを室温付近に冷却し、層間絶縁層103とする。感光性樹脂フィルムがキャリアフィルムを有する場合、キャリアフィルムはここで剥離してもよいし、後述するように露光後に剥離してもよい。
フォトビア形成工程(2)では、回路基板にラミネートされた感光性樹脂フィルムの少なくとも一部に対して露光し、次いで現像を行う。露光によって、活性光線が照射された部分が光硬化してパターンが形成される。露光方法に特に制限はなく、例えば、アートワークと呼ばれるネガ又はポジマスクパターンを介して活性光線を画像状に照射する方法(マスク露光法)を採用してもよいし、LDI(Laser Direct Imaging)露光法、DLP(Digital Light Processing)露光法等の直接描画露光法により、活性光線を画像状に照射する方法を採用してもよい。
活性光線の光源としては、公知の光源を用いることができる。光源としては、具体的には、カーボンアーク灯、水銀蒸気アーク灯、高圧水銀灯、キセノンランプ、アルゴンレーザ等のガスレーザ;YAGレーザ等の固体レーザ;半導体レーザ等の紫外線又は可視光線を有効に放射するものなどが挙げられる。露光量は、使用する光源及び感光層の厚さ等によって適宜選定されるが、例えば高圧水銀灯からの紫外線照射の場合、感光層の厚さ1~100μmでは、通常、10~1,000mJ/cm2程度が好ましく、15~500mJ/cm2がより好ましい。
感光層上にキャリアフィルムが存在している場合には、該キャリアフィルムを除去してから、未露光部分の除去(現像)を行う。現像方法には、ウェット現像とドライ現像があり、いずれを採用してもよいが、ウェット現像が広く用いられており、本実施形態においてもウェット現像を採用できる。
ウェット現像の場合、感光性樹脂組成物に対応した現像液を用いて、公知の現像方法により現像する。現像方法としては、例えば、ディップ方式、バトル方式、スプレー方式、ブラッシング、スラッピング、スクラッピング、揺動浸漬等を用いた方法が挙げられる。これらの中でも、解像性向上の観点からは、スプレー方式が好ましく、スプレー方式の中でも高圧スプレー方式がより好ましい。現像は、1種の方法で実施すればよいが、2種以上の方法を組み合わせて実施してもよい。
現像液の構成は、感光性樹脂組成物の構成に応じて適宜選択される。例えば、アルカリ性水溶液、水系現像液、有機溶剤系現像液等が挙げられ、これらの中でもアルカリ性水溶液が好ましい。
以上のようにして、ビア104を有する層間絶縁層が形成される。ビアの形状に特に制限はなく、断面形状で説明すると、例えば、四角形、逆台形(上辺が下辺より長い)等が挙げられ、正面(ビア底が見える方向)から見た形状で説明すると、円形、四角形等が挙げられる。本実施形態におけるフォトリソ法によるビアの形成では、断面形状が逆台形(上辺が下辺より長い)のビアを形成することができ、この場合、めっき銅のビア壁面への付き回り性が高くなるために好ましい。
但し、本工程によって形成されるビアのサイズ(直径)は40μm未満に限定されるものではなく、例えば、15~300μmの範囲で任意に選択してもよい。
粗化処理工程(3)では、ビア及び層間絶縁層の表面を粗化液により粗化処理を行う。なお、上記フォトビア形成工程(2)においてスミアが発生した場合には、該スミアを上記粗化液によって除去してもよい。粗化処理と、スミアの除去は同時に行うことができる。
上記粗化液としては、例えば、クロム/硫酸粗化液、アルカリ過マンガン酸粗化液(例えば、過マンガン酸ナトリウム粗化液等)、フッ化ナトリウム/クロム/硫酸粗化液等が挙げられる。
粗化処理により、ビア及び層間絶縁層の表面に凹凸のアンカーが形成される。
回路パターン形成工程(4)は、上記粗化処理工程(3)の後に、上記層間絶縁層上に回路パターンを形成する工程である。
回路パターンの形成は微細配線形成の観点から、セミアディティブプロセスにより実施することが好ましい。セミアディティブプロセスにより回路パターンの形成と共にビアの導通が行われる。
セミアディティブプロセスにおいては、まず、上記粗化処理工程(3)後のビア底、ビア壁面及び層間絶縁層の表面全体にパラジウム触媒等を用いた上で無電解銅めっき処理を施してシード層105を形成する。該シード層は電気銅めっきを施すための給電層を形成するためのものであり、好ましくは0.1~2.0μm程度の厚さで形成される。該シード層の厚さが0.1μm以上であれば、電気銅めっき時の接続信頼性が低下するのを抑制できる傾向にあり、2.0μm以下であれば、配線間のシード層をフラッシュエッチングする際のエッチング量を大きくする必要がなく、エッチングの際に配線に与えるダメージを抑えられる傾向にある。
上記無電解めっき処理方法及び上記電解めっき処理方法は公知の方法を適用すればよく、特に限定されるものではない。
無電解銅めっき液としては市販品を使用することができ、市販品としては、例えば、アトテックジャパン株式会社製の「MSK-DK」、上村工業株式会社製の「スルカップ(登録商標)PEAシリーズ」等が挙げられる。
ドライフィルムレジストの熱圧着後、例えば、所望の配線パターンが描画されたマスクを通してドライフィルムレジストの露光を行う。露光は、上記感光性樹脂フィルムにビアを形成する際に使用し得るものと同様の装置及び光源で行うことができる。露光後、アルカリ水溶液を用いてドライフィルムレジストの現像を行い、未露光部分を除去し、レジストパターン106を形成する。この後、必要に応じてプラズマ等を用いてドライフィルムレジストの現像残渣を除去する作業を行ってもよい。
現像後、電気銅めっきを行うことにより、銅の回路層107の形成及びビアフィリングを行う。
本発明は、本実施形態の多層プリント配線板に半導体素子を搭載してなる半導体パッケージも提供する。本実施形態の半導体パッケージは、本実施形態の多層プリント配線板の所定の位置に半導体チップ、メモリ等の半導体素子を搭載し、封止樹脂等によって半導体素子を封止することによって製造できる。
酸価は各合成例で得られた樹脂を中和するのに要した水酸化カリウム水溶液の量から算出した。
厚さ1.0mmの銅張積層基板(日立化成株式会社製、商品名「MCL-E-67」)を準備し、各例で製造したキャリアフィルム及び保護フィルム付き感光性樹脂フィルムから保護フィルムを剥離除去し、露出した感光性樹脂フィルムを、上記の銅張積層基板上に、プレス式真空ラミネーター(株式会社名機製作所製、商品名「MVLP-500」)を用いて、所定のラミネート条件(圧着圧力:0.4MPa、プレス熱板温度:80℃、真空引き時間:25秒間、ラミネートプレス時間:25秒間、気圧:4kPa以下)でラミネートして、感光層を有する積層体を得た。
次に、所定サイズの開口径を有するビアパターンが形成されたマスク(開口マスク径サイズ:5、8、10、15、20、30、40、50、60、70、80、90、及び100μmφ)を有するネガマスクを介して、i線露光装置(ウシオ株式会社製、品番「UX-2240SM―XJ-01」)を用いて、ステップタブレット段数(ST)が7となる露光量で露光した。
その後、1質量%の炭酸ナトリウム水溶液を用いて、30℃での最短現像時間(感光層の未露光部が除去される最短時間)の4倍に相当する時間、1.765×105Paの圧力でスプレー現像し、未露光部を溶解現像した。
次に、紫外線露光装置を用いて、2,000mJ/cm2の露光量で露光した後、170℃で1時間加熱して、銅張積層基板上に、所定サイズのビアパターンを有する感光性樹脂組成物の硬化物を有する試験片を作製した。
上記試験片を、金属顕微鏡または走査型電子顕微鏡を用いて観察し、開口が確認されたビアパターンのうち、最も小さいビアパターンの開口マスク径を最小開口マスク径とした。最小開口マスク径が小さいほど、ビアの解像性に優れる。
保護フィルムを剥がした感光性樹脂フィルム2枚を貼り合せ、両面のキャリアフィルムを有したまま、平面露光機で400mJ/cm2(365nm)、UVコンベア式露光機にて2J/cm2(365nm)照射した。これを温風循環式乾燥機にて170℃で1時間、さらに180℃で1時間加熱処理したものを、7cm×10cmのサイズに切断して評価サンプルとした。
得られた評価サンプルを温風循環式乾燥機にて105℃で10分間乾燥し、スプリットポスト誘電体共振器法(SPDR法)にて誘電正接を測定した。
(酸変性ビニル基含有エポキシ樹脂A-1の合成)
ビスフェノールF型エポキシ樹脂(DIC株式会社製、商品名「EXA-7376」)500質量部、アクリル酸72質量部、ハイドロキノン0.5質量部、カルビトールアセテート150質量部を反応容器に仕込み、90℃に加熱して撹拌することにより混合物を溶解した。次に、得られた溶液を60℃に冷却し、塩化ベンジルトリメチルアンモニウム2質量部を仕込み、100℃に加熱して、溶液の酸価が1mgKOH/gになるまで反応させた。反応後の溶液に、テトラヒドロ無水フタル酸230質量部とカルビトールアセテート85質量部とを加え、80℃に加熱して、6時間反応させた。その後、室温まで冷却し、固形分濃度が60質量%になるようにカルビトールアセテートで希釈して、酸変性ビニル基含有エポキシ樹脂A-1を得た。
(酸変性ビニル基含有エポキシ樹脂A-2の合成)
ジシクロペンタジエン型エポキシ樹脂(日本化薬株式会社製、商品名「XD-1000」、上記一般式(A-2)で表される構造を有するエポキシ樹脂)250質量部、アクリル酸70質量部、メチルハイドロキノン0.5質量部、カルビトールアセテート120質量部を反応容器に仕込み、90℃に加熱して撹拌することにより混合物を溶解した。次に、得られた溶液を60℃に冷却し、トリフェニルホスフィン2質量部を加え、100℃に加熱して、溶液の酸価が1mgKOH/gになるまで反応させた。反応後の溶液に、テトラヒドロ無水フタル酸98質量部とカルビトールアセテート850質量部とを加え、80℃に加熱して、6時間反応させた。その後、室温まで冷却し、固形分濃度が65質量%になるように溶剤を留去して、酸変性ビニル基含有エポキシ樹脂A-2を得た。
実施例1~5、参考例1、比較例1
(1)感光性樹脂組成物の製造
表1及び表2に示す配合組成(表中の数値の単位は質量部であり、溶液の場合は固形分換算量である。)に従って組成物を配合し、3本ロールミルで混練した。その後、固形分濃度が65質量%になるようにメチルエチルケトンを加えて、感光性樹脂組成物を得た。
(2)感光性樹脂フィルムの製造
厚さ16μmのポリエチレンテレフタレートフィルム(帝人株式会社製、商品名「G2-16」)をキャリアフィルムとし、該キャリアフィルム上に、各例で調製した感光性樹脂組成物を、乾燥後の膜厚が25μmとなるように塗布し、熱風対流式乾燥機を用いて75℃で30分間乾燥し、感光性樹脂フィルム(感光層)を形成した。続いて、該感光性樹脂フィルム(感光層)のキャリアフィルムと接している側とは反対側の表面上に、ポリエチレンフィルム(タマポリ株式会社製、商品名「NF-15」)を保護フィルムとして貼り合わせ、キャリアフィルム及び保護フィルムを貼り合わせた感光性樹脂フィルムを作製した。
[(A)光重合性化合物]
・酸変性ビニル基含有エポキシ樹脂A-1:合成例1で調製した酸変性ビニル基含有エポキシ樹脂A-1
・酸変性ビニル基含有エポキシ樹脂A-2:合成例2で調製した酸変性ビニル基含有エポキシ樹脂A-2
・ビスフェノールF型エポキシ樹脂(ビスフェノール型エポキシ樹脂、エポキシ当量192/eq)
・ナフトールノボラック型エポキシ樹脂(日本化薬株式会社製、商品名「NC-7000-L」、エポキシ当量231g/eq)
・ビフェニルアラルキル型エポキシ樹脂(日本化薬株式会社製、商品名「NC-3000-L」、エポキシ当量272g/eq)
・活性エステル化合物C-1:ジシクロペンタジエン型ジフェノール構造を有する活性エステル化合物(DIC株式会社製、商品名「HPC-8000-65T」、エステル基当量223g/eq)
・活性エステル化合物C-2:ポリアリレート樹脂(ユニチカ株式会社製、商品名「V-575」、エステル基当量:210g/eq、ジカルボキシベンゼンとビスフェノール類とから形成される活性エステル基を有するポリアリレート樹脂)
・活性エステル化合物C-3:ポリアリレート樹脂(ユニチカ株式会社製、商品名「W-575」、エステル基当量:220g/eq、ジカルボキシベンゼンとビスフェノール類とから形成される活性エステル基を有するポリアリレート樹脂)
・活性エステル化合物C-4:DIC株式会社製、商品名「EXB-8」
・ジペンタエリスリトールヘキサアクリレート
・トリシクロデカンジメタノールジアクリレート
・ポリエステル系エラストマ(日立化成株式会社製、商品名「SP1108」)
・エポキシ化ポリブタジエン(ダイセル化学株式会社製、商品名「PB3600」)
・無水マレイン酸変性ポリブタジエン(クレイバレー社製、商品名「Ricon(登録商標)130MA8」、無水マレイン酸変性基数:2個、1,4-トランス体+1,4-シス体:72%)
・光重合開始剤1:2-メチル-[4-(メチルチオ)フェニル]モルフォリノ-1-プロパノン(アセトフェノン類)
・光重合開始剤2:2,4-ジエチルチオキサントン(チオキサントン類)
・シリカ1:平均粒子径0.5μmの溶融球状シリカ(カップリング剤処理品)
・シリカ2:平均粒子径0.18μmの溶融球状シリカ(カップリング剤処理品)
・イソシアネートマスクイミダゾール(第一工業製薬株式会社製、商品名「G8009L」)
・トリアジン環含有フェノールノボラック樹脂(DIC株式会社製、商品名「LA7052」)
・4,4’-ビスジエチルアミノベンゾフェノン
・1,3,5-トリアジン-2,4,6-トリアミン
・シリコーン系整泡剤
・顔料
さらに、表2の参考例1及び実施例3~5の感光性樹脂組成物は、いずれも低い誘電正接を有しているが、その中でも、実施例3~5の感光性樹脂組成物は、顕著に低い誘電正接を達成できていることが分かる。
101 基板
102 回路パターン
103 層間絶縁層
104 ビア(ビアホール)
105 シード層
106 レジストパターン
107 銅の回路層
108 ソルダーレジスト層
Claims (16)
- (A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物、
(B)エポキシ樹脂、及び
(C)活性エステル化合物、
を含有する、感光性樹脂組成物。 - 前記(A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物の酸価が、20~200mgKOH/gである、請求項1又は2に記載の感光性樹脂組成物。
- 前記(B)エポキシ樹脂として、ビスフェノール型エポキシ樹脂及びアラルキル型エポキシ樹脂を含有する、請求項1~3のいずれか1項に記載の感光性樹脂組成物。
- 前記(C)活性エステル化合物が、1分子中に2個以上の活性エステル基を有する化合物であり、前記2個以上の活性エステル基が、多価カルボン酸化合物と、フェノール性水酸基を有する化合物と、から形成される活性エステル基である、請求項1~4のいずれか1項に記載の感光性樹脂組成物。
- 前記(A)エチレン性不飽和基及び酸性置換基を有する光重合性化合物の酸性置換基と、前記(B)エポキシ樹脂のエポキシ基との当量比[エポキシ基/酸性置換基]が、0.5~6.0であり、前記(B)エポキシ樹脂のエポキシ基と、前記(C)活性エステル化合物の活性エステル基との当量比[活性エステル基/エポキシ基]が、0.01~0.4である、請求項1~5のいずれか1項に記載の感光性樹脂組成物。
- さらに、(D)2個以上のエチレン性不飽和基を有し、酸性置換基を有さない架橋剤を含有する、請求項1~6のいずれか1項に記載の感光性樹脂組成物。
- さらに、(E)エラストマを含有し、該(E)エラストマとして、エチレン性不飽和基及び酸性置換基を有するエラストマを含有する、請求項1~7のいずれか1項に記載の感光性樹脂組成物。
- さらに、(F)光重合開始剤を含有する、請求項1~8のいずれか1項に記載の感光性樹脂組成物。
- さらに、(G)無機充填材を、感光性樹脂組成物の固形分全量基準で、10~80質量%含有する、請求項1~9のいずれか1項に記載の感光性樹脂組成物。
- さらに、(H)硬化促進剤を含有する、請求項1~10のいずれか1項に記載の感光性樹脂組成物。
- フォトビア及び層間絶縁層からなる群から選択される1種以上の形成に用いられる、請求項1~11のいずれか1項に記載の感光性樹脂組成物。
- 請求項1~12のいずれか1項に記載の感光性樹脂組成物からなる、感光性樹脂フィルム。
- 請求項1~12のいずれか1項に記載の感光性樹脂組成物、又は請求項13に記載の感光性樹脂フィルムを用いて形成される層間絶縁層を含有してなる多層プリント配線板。
- 請求項14に記載の多層プリント配線板に半導体素子を搭載してなる半導体パッケージ。
- 下記工程(1)~(4)を含む、多層プリント配線板の製造方法。
工程(1):請求項13に記載の感光性樹脂フィルムを、回路基板の片面又は両面にラミネートする工程。
工程(2):前記工程(1)でラミネートされた感光性樹脂フィルムに対して露光及び現像することによって、ビアを有する層間絶縁層を形成する工程。
工程(3):前記ビア及び前記層間絶縁層を粗化処理する工程。
工程(4):前記層間絶縁層上に回路パターンを形成する工程。
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