WO2020233480A1 - 低介电常数膜及其制备方法 - Google Patents

低介电常数膜及其制备方法 Download PDF

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Publication number
WO2020233480A1
WO2020233480A1 PCT/CN2020/090119 CN2020090119W WO2020233480A1 WO 2020233480 A1 WO2020233480 A1 WO 2020233480A1 CN 2020090119 W CN2020090119 W CN 2020090119W WO 2020233480 A1 WO2020233480 A1 WO 2020233480A1
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dielectric constant
compound
low dielectric
constant film
film according
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PCT/CN2020/090119
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English (en)
French (fr)
Chinese (zh)
Inventor
宗坚
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Jiangsu Favored Nanotechnology Co Ltd
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Jiangsu Favored Nanotechnology Co Ltd
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Priority to US17/595,436 priority Critical patent/US11904352B2/en
Priority to JP2021568365A priority patent/JP7475371B2/ja
Priority to KR1020217040802A priority patent/KR20220008319A/ko
Priority to EP20809129.8A priority patent/EP3971320A4/en
Publication of WO2020233480A1 publication Critical patent/WO2020233480A1/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2504/00—Epoxy polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2506/00—Halogenated polymers
    • B05D2506/10—Fluorinated polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2518/00—Other type of polymers
    • B05D2518/10—Silicon-containing polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps

Definitions

  • the present invention relates to the field of ultra-large-scale integrated circuit manufacturing. In detail, it relates to a low dielectric constant film and a preparation method thereof.
  • PECVD plasma-enhanced chemical vapor deposition
  • one or more organic silicon compounds are introduced into a plasma-enhanced chemical vapor deposition chamber Into the chamber, and introduce a porogen into the chamber, make the one or more organosilicon compounds react with the porogen under constant RF power conditions to deposit a low-k film on a substrate in the chamber
  • post-treatment is applied to this low-k film to substantially remove the pore former on this low-k film.
  • these materials need to be added with a pore-forming agent to form pores. After the pores are formed, the pore-forming agent is further removed, but the pore-forming agent is generally not completely removed, and sometimes even more remains.
  • these materials are formed by directly forming a film with pores on the substrate, and the formation of pores reduces the bonding strength of the film and the substrate, or the adhesion of the film on the substrate is low, and the film has a high porosity.
  • the rate makes the dielectric constant lower, but the high porosity also makes the bond strength lower, that is, there is a contradiction between the two aspects.
  • these materials have poor mechanical strength and poor corrosion resistance, causing the nano-film layer to be easily damaged during subsequent semiconductor processing.
  • the film layer is attached to the substrate by reacting with the pore-forming agent in the chamber by PECVD technology, but when it is formed, the uniformity of the film layer in different areas of the substrate is not controlled, and the concentration in different areas in the chamber Different, so it is easy to cause uneven distribution of the film layer on the substrate.
  • the existing low dielectric constant nano film has poor hydrophobicity.
  • the surface of the substrate is easily corroded in the salt spray test. Therefore, the long-term use of the product is not used. The requirements are also relatively high.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, which includes at least a two-layer structure.
  • the k value of the low dielectric constant film is adjusted through the cooperation of the multilayer structure, and the low dielectric constant film is improved. Constant film adhesion and/or mechanical properties.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof.
  • a plasma enhanced chemical vapor deposition (PECVD) method is used to form an anticorrosive layer and a porous layer. It adheres to the substrate to form a low dielectric constant (k) film with strong bonding force to the substrate, and has good corrosion resistance.
  • PECVD plasma enhanced chemical vapor deposition
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, wherein under an inert gas atmosphere, vinyl organic silicon monomer and vinyl epoxy monomer are subjected to PECVD to form an anticorrosive layer.
  • an advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof.
  • the anti-corrosion layer is made of alkylene oxide containing unsaturated carbon-carbon double bonds and silicon containing unsaturated double bonds. A compound obtained by the reaction of oxane or silane.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, which separate the anticorrosive layer between the porous layer and the substrate, so that the porosity of the porous layer will not or less affect the low dielectric constant
  • the binding force between the film and the substrate is constant, and the k value can be made smaller by increasing the porosity.
  • An advantage of the present invention is to provide a low-dielectric constant film and a preparation method thereof, which adopts a dynamic coating method to make the low-dielectric constant film more uniformly adhere to the substrate, reducing the difference in the coating of the substrate at different positions, The problem of uneven thickness caused by different concentrations of deposits in different regions of the substrate is solved.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, which are obtained by PECVD in a single atmosphere or mixed atmosphere of organosilane and organosiloxane under a single atmosphere or mixed atmosphere of oxygen, nitrogen/hydrogen Porous layer.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, which form a fluorosilicon polymer on the surface layer to further reduce the k value of the low dielectric constant film.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, which form an organic fluorosilicon containing aromatic groups on the surface layer, and use the rigid structure of the aromatic groups to improve the mechanical properties of the low dielectric constant film.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof.
  • the fluorosilicone polymer with low surface energy on the surface has superhydrophobic characteristics and the static contact angle of water on the surface is large.
  • An advantage of the present invention is to provide a low-dielectric constant film and a preparation method thereof.
  • the organic silicon nano film and the organic silicon/oxygen are deposited alternately to form an organic Oxygen is introduced after the silicon layer, the hydrocarbon part of the organic silicon layer reacts with oxygen to form an irregular rough surface, and then SiOCNH is deposited on the surface, which helps to form large pores with a higher specific surface area, and the alternating structure helps The adhesion between the low dielectric constant film and the substrate is enhanced.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, which can adjust the dielectric properties and mechanical properties of the low dielectric constant film by adjusting the content of the fluorine-containing aromatic group.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof.
  • a PECVD method is used to form a two-layer structure consisting of a porous layer and a fluorine-containing layer, which reduces the value of k.
  • the hydrophobic performance of the low dielectric constant film is improved, and the corrosion resistance of the deposited substrate is improved.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof.
  • a PECVD method is used to form a two-layer structure composed of an anti-corrosion layer and a porous layer, which reduces the k value while enhancing The bonding force and viscosity between the low dielectric constant film and the substrate.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof.
  • a PECVD method is used to form a three-layer structure consisting of an anticorrosive layer, a porous layer, and a fluorine-containing layer, which passes
  • the alternate arrangement of different layers improves the dielectric properties, mechanical properties and hydrophobicity of the low dielectric constant film as a whole, and the alternate arrangement is beneficial to forming a porous layer with a large pore volume.
  • An advantage of the present invention is to provide a low dielectric constant film and a preparation method thereof, which does not require a pore former to form a pore structure, and therefore does not require high temperature annealing treatment to remove the pore former.
  • one aspect of the present invention provides a low dielectric constant film, which uses alkylene oxides, organosilicon compounds, and fluorine-containing siloxane compounds as raw materials, through a plasma-enhanced chemical vapor deposition method.
  • the surface of the substrate is formed.
  • the low dielectric constant film includes an anticorrosive layer composed of an alkylene oxide compound A containing unsaturated double bonds and a siloxane containing unsaturated double bonds or
  • the silane compound B is formed on the surface of the substrate by plasma enhanced chemical vapor deposition.
  • the low dielectric constant film includes a porous layer
  • the porous layer is formed of organosilane and/or organosiloxane compound C and alkane compound and/or benzene compound E by plasma enhanced chemical vapor deposition.
  • the low dielectric constant film according to at least one embodiment of the present invention includes a porous layer formed by plasma-enhanced chemical vapor deposition of compound C and compound E, and compound C includes organosilicon Compounds, the compound E includes alkane compounds and benzene compounds.
  • the low dielectric constant film according to at least one embodiment of the present invention includes a porous layer formed by plasma-enhanced chemical vapor deposition of compound C and compound E, and compound C includes organosilicon
  • compound C includes organosilicon
  • the compound E includes an alkane compound.
  • the low dielectric constant film according to at least one embodiment of the present invention includes a porous layer formed by plasma-enhanced chemical vapor deposition of compound C and compound E, and compound C includes organosilicon Compound, the compound E includes a benzene compound.
  • the low dielectric constant film includes a fluorine-containing layer formed by arylfluorosilane D by plasma enhanced chemical vapor deposition.
  • the bottom layer is formed by plasma-enhanced chemical vapor deposition of vinyl epoxy compound and vinyl organosilicon compound on the surface of the substrate.
  • the low dielectric constant film according to at least one embodiment of the present invention, wherein the compound A is selected from the group consisting of: vinyl oxirane, glycidyl methacrylate, allyl glycidyl ether, 1, 2 -One or more mixtures of epoxy-4-vinylcyclohexane, 2,3-epoxypropyldimethylvinylsilane, and 2,3-epoxypropyldichlorovinylsilane.
  • the compound A is selected from the group consisting of: vinyl oxirane, glycidyl methacrylate, allyl glycidyl ether, 1, 2 -One or more mixtures of epoxy-4-vinylcyclohexane, 2,3-epoxypropyldimethylvinylsilane, and 2,3-epoxypropyldichlorovinylsilane.
  • the low dielectric constant film according to at least one embodiment of the present invention, wherein the compound B is selected from the group consisting of allyltrimethoxysilane, vinyltriethoxysilane, trimethylvinylsilane, 3 -Butenyl trimethyl silane, vinyl tributyl ketoxime silane, tetramethyl divinyl disiloxane, tetramethyl tetravinyl cyclotetrasiloxane, 1,2,2-trifluoroethylene
  • the compound C is an organosiloxane.
  • the compound C is an organosilane.
  • the low dielectric constant film according to at least one embodiment of the present invention, wherein the compound C is selected from the group consisting of: ⁇ -glycidoxypropyltrimethoxysilane; D4H cyclotetrasiloxane, hexamethyl ring Trisiloxane, tris-(trimethoxysilane) phenylsilane, tert-butyldimethylchlorosilane, phenylethynyltrimethylsilane, biphenylvinyltrimethylsilane, octaphenylcyclotetra Siloxane, triphenylhydroxysilane, trifluoropropylmethyl cyclotrisiloxane, 2,2,4,4-tetramethyl-6,6,8,8-tetraphenylcyclotetrasiloxane , Tetramethyltetravinylcyclotetrasiloxane, 3-glycidoxypropyltriethoxysilane,
  • the low dielectric constant film wherein the compound E is selected from the group consisting of: cyclobutane, cyclopentane, cyclohexane, benzene, toluene, p-xylene, or Multiple mixtures.
  • the low dielectric constant film wherein the compound D is selected from the group consisting of: pentafluorophenyltriethoxysilane, pentafluorophenyltrimethoxysilane, pentafluorophenyltrimethoxysilane, Chlorosilane, pentafluorophenyldimethylchlorosilane, perfluorooctylethylpentafluorophenyldichlorosilane, pentafluorodichlorophenylperfluorohexylethylsilane, perfluorooctyldichlorophenylsilane, Perfluorooctyldiethoxyphenylsilane, perfluorooctylethylpentafluorophenyldimethoxysilane, perfluorobutylethylpentafluorophenyldichlor
  • an auxiliary gas is introduced during the vapor deposition process for reaction, and the auxiliary gas is selected from one or more mixtures of He and Ar.
  • the low dielectric constant film wherein an auxiliary gas is introduced during the vapor deposition process for reaction, and the auxiliary gas is selected from one of nitrogen/hydrogen, ammonia, oxygen, and hydrocarbons. kind or mixed.
  • the low dielectric constant film according to at least one embodiment of the present invention, wherein the range of the dielectric constant value of the low dielectric constant film is selected from 2.1 to 2.2, 2.2 to 2.3, 2.4 to 2.5, 2.5 to 2.6, Or 2.6 ⁇ 2.7.
  • the low dielectric constant film according to at least one embodiment of the present invention, wherein the range of the Young's modulus of the low dielectric constant film is: 10-11 GPa, 11-12 GPa, 12-13 GPa, 23-24 GPa, 26 ⁇ 27GPa, 27 ⁇ 28GPa, 29 ⁇ 30GPa, 31 ⁇ 32GPa or 33 ⁇ 34GPa.
  • the low dielectric constant film according to at least one embodiment of the present invention, wherein the static contact angle of the low dielectric constant film ranges from 110° to 115°, 115° to 120°, 120° to 125°, 125° ⁇ 130°, 130° ⁇ 135°, 135° ⁇ 140°, 140° ⁇ 145°, 145° ⁇ 150° or 150° ⁇ 155°.
  • the low dielectric constant film according to at least one embodiment of the present invention, wherein the thickness of the low dielectric constant film ranges from 10 nm to 2000 nm.
  • Another aspect of the present invention provides a low dielectric constant film, which includes:
  • a fluorine-containing layer; the fluorine-containing layer is formed by aryl fluorosilane D through plasma enhanced chemical vapor deposition.
  • the low dielectric constant film wherein the porous layer is directly deposited on the surface of a substrate, and the fluorine-containing layer is deposited on the surface of the porous layer.
  • the low dielectric constant film includes an anticorrosive layer composed of an alkylene oxide compound A containing unsaturated double bonds and a siloxane containing unsaturated double bonds or
  • the silane compound B is formed on the surface of the substrate by plasma enhanced chemical vapor deposition, and the porous layer is deposited on the anticorrosive layer.
  • Another aspect of the present invention provides a method for preparing a low dielectric constant film, which includes the steps:
  • step (A) includes:
  • the low dielectric constant preparation method wherein the step (B) includes:
  • (B2) Gas is introduced, wherein the gas is selected from one or more of the combined nitrogen plus hydrogen and ammonia;
  • the porous layer is formed by the vapor deposition reaction of the compound C and the compound E under a predetermined power.
  • the low dielectric constant preparation method wherein the step (B) includes:
  • (B2) Gas is introduced, wherein the gas is selected from one or more of the combined nitrogen plus hydrogen and ammonia;
  • the porous layer is formed by the vapor deposition reaction of the compound C and the compound E under a predetermined power.
  • the low dielectric constant preparation method wherein the step (B) includes:
  • (B2) Gas is introduced, wherein the gas is selected from one or more of the combined nitrogen plus hydrogen and ammonia;
  • the oxygen gas is fed in intermittently.
  • the method for preparing a low dielectric constant film according to at least one embodiment of the present invention further includes step (C): vapor-depositing a fluorine-containing layer onto the porous layer.
  • step (C) includes:
  • the low dielectric constant preparation method further includes the step of cleaning and treating the surface of the substrate.
  • the method for preparing a low dielectric constant film of the present invention further includes the step of: operating the substrate to make the substrate move in the chamber.
  • FIG. 1 is a block diagram of the preparation process of a low dielectric constant film according to an embodiment of the present invention.
  • FIG. 2 is a block diagram of the formation process of the anticorrosive layer of the low dielectric constant film according to an embodiment of the present invention.
  • FIG. 3 is a block diagram of the formation process of a porous layer of a low dielectric constant film according to an embodiment of the present invention.
  • FIG. 4 is a block diagram of the formation process of the fluorine-containing layer of the low dielectric constant film according to an embodiment of the present invention.
  • the invention provides a low dielectric constant film and a preparation method thereof.
  • the low dielectric constant film contains silicon, oxygen, and carbon.
  • the low dielectric constant film contains silicon, oxygen, carbon and fluorine.
  • the low dielectric constant film has nano-sized pores.
  • the low dielectric constant has good dielectric properties.
  • the k value of the low dielectric constant film is less than 2.8.
  • the k value range of the low dielectric constant module is 1.9 to 2.7.
  • the k value range of the low dielectric constant module is 2.0 ⁇ 2.7.
  • the k value of the low dielectric constant film ranges from 2.1 to 2.2, 2.2 to 2.3, 2.4 to 2.5, 2.5 to 2.6, or 2.6 to 2.7.
  • the low dielectric constant film has good mechanical properties, and the Young's modulus of the low dielectric constant film is greater than 10 GPa.
  • the range of the Young's modulus of the low dielectric constant film is 10 to 41 GPa
  • the range of Young's modulus is 10 to 11 GPa, 11 to 12 GPa, 12 to 13 GPa, 23 to 24 GPa, 26 to 27 GPa, 27 to 28 GPa, 29 to 30 GPa, 31 to 32 GPa, or 33 to 34 GPa.
  • the hardness of the low dielectric constant film is greater than 1.5 GPa.
  • the hardness of the low dielectric constant film is in the range of 1.6 to 2.9 GPa, for example, the hardness is in the range of 1.62 to 2.79 GPa.
  • the low dielectric constant film has good hydrophobic properties, and the static contact angle of water attached to the low dielectric constant film is greater than 110°, for example, the static contact angle is greater than 120°, for example, the static contact angle is greater than 140°
  • the static contact angle ranges are: 110° ⁇ 115°, 115° ⁇ 120°, 120° ⁇ 125°, 125° ⁇ 130°, 130° ⁇ 135°, 135° ⁇ 140°, 140° ⁇ 145°, 145° ⁇ 150°or, 150° ⁇ 155° or 155° ⁇ 160°. Therefore, the low dielectric constant film has good corrosion resistance.
  • the iron sheet when the low dielectric constant film is deposited on the surface of metallic iron and undergoes a salt spray test for 90 hours, the iron sheet is not corroded or there are only a small number of corrosion points.
  • the low dielectric constant film is deposited on the metal iron surface after 96 hours of salt spray test, the iron sheet is not corroded.
  • the low dielectric constant film is a nano film, and its thickness ranges for example but not limited to 10 to 2000 nm.
  • the low dielectric constant film is formed on the surface of a substrate by a plasma enhanced chemical vapor deposition (PECVD) method.
  • PECVD plasma enhanced chemical vapor deposition
  • the raw materials constituting the low dielectric constant film are deposited on the surface of the substrate through a PECVD process, and the low dielectric constant film is formed on the surface of the substrate.
  • the low dielectric constant film is deposited on the surface of the circuit board of the LSI, so as to improve the RC delay phenomenon of the LSI.
  • the plasma enhanced chemical vapor deposition (PECVD) method generates plasma by glow discharge, and the discharge method includes microwave discharge, radio frequency discharge, ultraviolet, and electric spark discharge.
  • the low dielectric constant film is formed on the surface of a substrate by a plasma-enhanced chemical vapor deposition method using alkylene oxides, organic silicon compounds and fluorine-containing siloxane compounds as raw materials.
  • the low dielectric constant film has a multilayer structure.
  • the low dielectric constant film includes an anticorrosive layer, a porous layer, and a fluorine-containing layer.
  • the anti-corrosion layer, the porous layer and the fluorine-containing layer are formed on the surface of the substrate by a PECVD method.
  • the anti-corrosion layer is composed of silicone polymer, and further, the anti-corrosion layer is composed of nano-scale silicone polymer.
  • the organic silicon polymer or the raw material forming the organic silicon polymer is deposited on the surface of the substrate by PECVD to form the anticorrosive layer of the low dielectric constant film, or the first layer of the low dielectric constant film.
  • the anti-corrosion layer is a composite obtained by reacting an alkylene oxide compound A containing an unsaturated carbon-carbon double bond and a siloxane or silane compound B containing an unsaturated double bond.
  • the anti-corrosion layer can be made of vinyl alkylene oxide and vinyl organosilicon silane or vinyl organosiloxane, under the predetermined power and temperature of the reaction device, through PECVD, the surface of the substrate is deposited and reacted.
  • Vinyl alkylene oxide is an organic substance including epoxy groups and carbon-carbon double bonds, and its boiling point under normal pressure is not higher than 400°C.
  • Vinyl silanes or vinyl siloxanes include linear and cyclic silanes and siloxanes containing carbon-carbon unsaturated double bonds, and have a boiling point not higher than 300°C under normal pressure.
  • the compound A is selected from the combination: vinyl ethylene oxide, glycidyl methacrylate, allyl glycidyl ether, 1,2-epoxy-4-vinylcyclohexane, 2,3 -One or more mixtures of epoxypropyldimethylvinylsilane and 2,3-epoxypropyldichlorovinylsilane.
  • the compound B is selected from the combination: allyl trimethoxy silane, vinyl triethoxy silane, trimethyl vinyl silane, 3-butenyl trimethyl silane, vinyl trimethyl ketoxime Silane, tetramethyldivinyldisiloxane, tetramethyltetravinylcyclotetrasiloxane, 1,2,2-trifluorovinyltriphenylsilane, dimethylmethoxyvinylsilane , One or more mixtures of 4-styryl (trimethoxysiloxy) silane.
  • an auxiliary gas needs to be introduced for vapor deposition.
  • the auxiliary gas is exemplified but not limited to inert gas He, Ar, or a mixed gas of He and Ar.
  • the anti-corrosion layer is formed of a composite of epoxy resin and organic silicon.
  • the epoxy resin material and the organic silicon material are deposited on the surface of the substrate by PECVD to form a polymer layer with anti-corrosion properties.
  • a single atmosphere or a mixed atmosphere of vinyl alkylene oxide, vinyl siloxane, and vinyl silane is used as the reaction source, and the organic silicon polymer composite nano film layer is obtained by vapor deposition in a low temperature and low pressure plasma environment, that is, The anti-corrosion layer is obtained.
  • the porous layer is silicone with a plurality of pores, and the k value of the low dielectric constant film is adjusted by the porosity of the porous layer.
  • the organic silicon material is deposited on the surface of the substrate by PECVD to form an organic silicon nano-layer with a porous structure, thereby forming a porous layer of the low dielectric constant nano film, or the second layer of the low dielectric constant film .
  • auxiliary gas needs to be introduced to form the porous layer.
  • the hydrocarbon organics in the auxiliary gas are mainly branched chain alkanes, cycloalkanes, and aromatic hydrocarbons with a carbon number of 12 or less.
  • the porous layer may be formed by the reaction of compound C and compound E.
  • the compound C is an organosilicon compound, for example, it may be an organosiloxane or an organosilane.
  • the compound E may be an alkane compound or a benzene compound.
  • the porous layer may be made of organosilane and/or organosiloxane compound C and alkane compound and/or benzene compound E.
  • the surface deposition reaction of the anti-corrosion layer is obtained.
  • the organosilicon compound C includes branched, cyclic silane or siloxane, and a liquid or gas with a boiling point of less than 350°C under normal pressure.
  • compound C is selected from the combination: ⁇ -glycidoxypropyltrimethoxysilane; D4H cyclotetrasiloxane, hexamethylcyclotrisiloxane, tris-(trimethoxysilane) phenylsilane, Tert-butyldimethylchlorosilane, phenylethynyltrimethylsilane, biphenylvinyltrimethylsilane, octaphenylcyclotetrasiloxane, triphenylhydroxysilane, trifluoropropylmethyl ring Trisiloxane, 2,2,4,4-tetramethyl-6,6,8,8-tetraphenylcyclotetrasiloxane, tetramethyltetravinylcyclotetrasiloxane, 3-glycidol Etheroxypropyltriethoxysilane, tetramethyldivinyldisiloxane, t
  • the compound E is selected from the combination: one or more mixtures of cyclobutane, cyclopentane, cyclohexane, benzene, toluene, and p-xylene.
  • the porous layer is continuously deposited by the PECVD method in the same reaction chamber.
  • oxygen gas is introduced into the gap at a predetermined frequency under a nitrogen/hydrogen and/or ammonia atmosphere, and the compound C and The compound E deposition reaction results in the porous layer.
  • the anticorrosive layer is spaced between the porous layer and the substrate, so that the porosity of the porous layer will not or less affect the low dielectric constant film and the substrate.
  • the binding force of, and the k value can be made smaller by increasing the porosity.
  • the fluorine-containing layer is a fluorosilicone polymer, and further, the fluorine-containing layer is an organofluorosilicon containing an aromatic group with a low dielectric constant.
  • the rigid structure of the aromatic group is used to improve the The mechanical properties of the fluorine-containing layer.
  • the fluorine-containing layer is organofluorosilicon containing phenyl groups. The steric hindrance of the benzene ring is relatively large, and the roughness of the low dielectric constant film can be adjusted.
  • the content of the fluorine-containing phenyl group in the low dielectric constant film can be changed by changing the ratio of the amount of fluorine-containing aromatic organosilane and cyclosiloxane. , By adjusting the content of the fluorine-containing aromatic group to adjust the electrical and mechanical properties of the low dielectric constant film, and further reduce the k value of the low dielectric constant film.
  • a fluorine-silicon layer containing an aromatic structure is deposited on the surface of the porous layer, in other words, the third layer of the low dielectric constant film.
  • the fluorine-containing layer is obtained by deposition reaction of aromatic fluorosilane D on the surface of the porous layer by PECVD.
  • the fluorine-containing layer has low surface energy, good hydrophobic properties, and a large static contact angle of water on its surface.
  • the low dielectric constant film forms organofluorosilicon containing aromatic groups on the surface layer, and the rigid structure of the aromatic groups is used to improve the mechanical properties of the low dielectric constant film.
  • compound D is selected from the combination: pentafluorophenyltriethoxysilane, pentafluorophenyltrimethoxysilane, pentafluorophenyltrichlorosilane, pentafluorophenyldimethylchlorosilane, perfluorooctyl Ethylpentafluorophenyldichlorosilane, pentafluorodichlorophenylperfluorohexylethylsilane, perfluorooctyldichlorophenylsilane, perfluorooctyldiethoxyphenylsilane, perfluorooctylethylsilane One or more mixtures of pentafluorophenyldimethoxysilane, perfluorobutylethylpentafluorophenyldichlorosilane, and perfluorobutylethylpent
  • the gaseous compound D is continuously introduced into the same reaction chamber at a predetermined power, and deposited for a predetermined time to obtain the low dielectric constant film The surface.
  • a plasma-enhanced chemical vapor deposition technique is used on the surface of the low dielectric constant film to deposit a fluorine-containing aromatic silane on the cavity of the porous three-dimensional organic silicon coating and the surface of the coating.
  • the fluorine-containing aromatic silane has a low dielectric constant, and the steric hindrance of the benzene ring is large, which can adjust the roughness of the nano-coating.
  • the ratio of the amount of fluoroaromatic silicone monomer and cyclosiloxane is used to change the content of fluorine-containing phenyl groups in the molecule; the electrical properties of low dielectric constant material films can be adjusted by adjusting the content of fluorine-containing aromatic groups in the molecule. Other aspects of performance.
  • the low dielectric constant film of the present invention is composed of a multilayer structure, such as two layers or three or more layers.
  • the low dielectric constant film is composed of a two-layer structure. constitute.
  • the low dielectric constant film is composed of the anti-corrosion layer and the porous layer to form a two-layer structure.
  • chemical vapor deposition of compound A and compound B can be formed on the surface of the substrate.
  • the anti-corrosion layer and then continue to chemical vapor deposition of compound C and compound E to form the porous layer, the anti-corrosion layer is the bottom layer, and the porous layer is the surface layer.
  • the low dielectric constant film of the two-layer structure composed of the anticorrosive layer and the porous layer while reducing the k value, enhances the bonding force and viscosity between the low dielectric constant film and the substrate.
  • the low dielectric constant film is composed of the porous layer and the fluorine-containing layer to form a two-layer structure.
  • the compound C and the compound E can be formed by chemical vapor deposition on the surface of the substrate.
  • the porous layer, and then the chemical vapor deposition of compound D is continued to form the fluorine-containing layer, the porous layer is the bottom layer, and the fluorine-containing layer is the surface layer.
  • the low dielectric constant film of the two-layer structure composed of the porous layer and the fluorine-containing layer reduces the k value while improving the hydrophobic performance of the low dielectric constant film and improving the deposited substrate Anti-corrosion performance.
  • the low dielectric constant film is composed of the anti-corrosion layer, the porous layer, and the fluorine-containing layer to form a three-layer structure.
  • chemical vapor deposition of compounds on the surface of the substrate A and compound B form the anti-corrosion layer
  • chemical vapor deposition of compound C and compound E to form the porous layer continue chemical vapor deposition of compound D on the porous layer to form the fluorine-containing layer
  • the anti-corrosion layer is The bottom layer
  • the porous layer is the middle layer
  • the fluorine-containing layer is the surface layer.
  • the low dielectric constant film of the three-layer structure composed of the anti-corrosion layer, the porous layer and the fluorine-containing layer improves the overall dielectric constant of the low dielectric constant film through the alternate arrangement of different layers Performance, mechanical properties and hydrophobicity, and the alternate arrangement is conducive to the formation of a porous layer with large pore volume.
  • the pore structure in the low dielectric constant nanomembrane has a greater impact on the reduction of the dielectric constant, and also affects the mechanical properties and hydrophobicity. For example, when the porosity increases, the k value can be significantly reduced. It is small, but the increase in porosity also affects the decrease of the mechanical and the bonding force with the surface of the substrate, and when there are many surface pores, the hydrophobicity decreases.
  • the reduction of the dielectric constant of the nanomembrane depends on the total air volume after the introduction of the porous material, which includes three aspects: (1) the void volume caused by the incomplete filling of the porous SiOCNH channels; (2) the random arrangement of the fluorine-silicon chains The void created; (3) The free volume created by the addition of porous SiOCNH.
  • the low-dielectric constant film has a two-layer or three-layer structure formed by the anti-corrosion layer, the porous layer and/or the fluorine-containing layer, so that the dielectric constant is reduced and the mechanical properties are reduced. And the balance between hydrophobicity.
  • the organic silicon nano-film and the organic silicon/oxygen are deposited alternately, and oxygen is introduced after the organic silicon layer is formed.
  • the hydrocarbon part reacts with oxygen to form an irregular rough surface, and then SiOCNH is deposited on the surface, which helps to form large pores with a higher specific surface area, and the alternating structure helps to strengthen the low dielectric constant film and the substrate The adhesion.
  • the low dielectric constant film obtained by multiple plasma-enhanced chemical vapor deposition forms a three-dimensional network structure, which does not need to form pores with the aid of a pore former, and does not require high-temperature annealing treatment.
  • a cyclic organosilicon monomer is selected to copolymerize with a large-volume monomer with larger steric hindrance. This copolymerization is carried out in an O 2 plasma atmosphere, and the O 2 In this way, the Si-O bond and the hydrocarbon bond are ensured, so that the organic silicon nano coating with a three-dimensional structure and low dielectric constant can be prepared in a controllable manner.
  • FIG. 1 is a block diagram of the preparation process of a low dielectric constant film according to an embodiment of the present invention.
  • 2 is a block diagram of the formation process of the anticorrosive layer of the low dielectric constant film according to an embodiment of the present invention.
  • 3 is a block diagram of the formation process of a porous layer of a low dielectric constant film according to an embodiment of the present invention.
  • 4 is a block diagram of the formation process of the fluorine-containing layer of the low dielectric constant film according to an embodiment of the present invention.
  • the low dielectric constant is obtained by performing multiple PECVD reactions through a plasma-enhanced chemical vapor deposition reaction device.
  • the method for preparing the low dielectric constant film includes the steps:
  • the formation process of the anti-corrosion layer includes the steps:
  • the substrate Before step 101, the substrate may also be pre-treated, such as cleaning the surface of the substrate.
  • the pre-treatment process of the substrate includes the steps:
  • Ultrasonic cleaning of the substrate Put the substrate into a container filled with deionized water, perform ultrasonic cleaning, the cleaning time is 10-30 minutes, and then take it out and put it in a drying oven to dry;
  • one or more of the above-mentioned methods can be selected for pre-treatment, and the present invention does not limit this aspect.
  • the process of step 101 may be: placing a body with a clean surface in the reaction chamber of a plasma-enhanced chemical vapor deposition reaction device, and then continuously evacuating the reaction chamber to reduce the vacuum degree in the reaction chamber to 10 ⁇ 200 mtorr, and pass in the inert gas He, Ar, or He and Ar mixed gas, open the movement mechanism to make the substrate move in the reaction chamber, and pass into the vinyl ring after the pressure and temperature reach the set value Oxygen compound A and vinyl organosilicon compound B, the plasma power is adjusted to 30 ⁇ 500W, the chamber temperature is adjusted to 10 ⁇ 100°C, and plasma enhanced chemical vapor deposition is performed. After the reaction is completed, stop passing the reactants and increase the temperature. High cavity pressure to atmospheric pressure.
  • the step 101 may also be referred to as an anti-corrosion treatment step. This process enables the low dielectric constant film to be more tightly bonded to the substrate and prevents the substrate from being corroded.
  • a dynamic coating method is adopted, so that the low dielectric constant film is more uniformly attached to the substrate, and the substrate is less
  • the difference in coatings at different positions solves the problem of uneven thickness caused by different concentrations of deposits in different areas of the substrate.
  • the substrate is moved in the reaction chamber, so that different positions of the substrate can be uniformly attached to the anti-corrosion layer.
  • the operation mode of the substrate may include multiple modes.
  • the substrate may revolve around the center axis of the substrate or a predetermined axis with the center point of the reaction chamber as a reference point or a predetermined axis, or ,
  • the base body respectively rotates around two axes in the horizontal and vertical directions.
  • the porous layer needs to be formed by vapor deposition of organosilane and/or organosiloxane compound C and alkane compound and/or benzene compound E.
  • step 102 is performed after step 101, that is, after the anti-corrosion layer is formed, the porous layer is formed on the anti-corrosion vehicle, and the in an embodiment, step 102 can also be performed directly, that is, the porous layer is directly formed on the surface of the substrate without forming the anti-corrosion layer.
  • the formation process of the porous layer includes the steps:
  • the porous layer is formed by a vapor deposition reaction of organosilane and/or organosiloxane compound C and alkane compound and/or benzene compound E;
  • the formation process of the porous layer in the step 102 may be: after the antiseptic treatment, while continuing to pass in the compound C and the compound E, the inlet gas is nitrogen/hydrogen and/or ammonia while passing in Gas oxygen, oxygen is fed in intermittently, the frequency is 10 to 600 seconds, that is, oxygen is fed in every 10 to 600 seconds, the oxygen reaction time is 10 to 600 seconds, and the feeding of compound C and compound E is stopped after the reaction is completed. That is, the porous layer is formed.
  • step 102 may also include step 1013, that is, making the substrate continue to move in the reaction chamber. That is, the porous layer is formed under dynamic conditions.
  • the reactive gases nitrogen/hydrogen and/or ammonia are added for the deposition of N-containing nano-coatings.
  • the nitrogen content of the nano-coatings is determined by the nitrogen content of the mixed monomer and the nitrogen content of the mixed gas. / Determined by the nitrogen content of hydrogen and/or ammonia.
  • the flow of O 2 is one of the factors that affect the oxygen content of the nano coating.
  • the organic silicon nano film and the organic silicon/oxygen are deposited alternately, oxygen is intermittently introduced after the organic silicon layer is formed, and the hydrocarbon part of the organic silicon layer reacts with the oxygen Forming an irregular rough surface and then depositing SiOCNH on the surface helps to form large pores with a higher specific surface area, and the alternating structure helps to enhance the adhesion of the low dielectric constant film to the substrate.
  • the fluorine-containing layer is formed by vapor deposition of aromatic fluorosilane D.
  • the formation process of the fluorine-containing layer in the step 103 includes the steps:
  • the fluorine-containing layer is formed by an aromatic fluorosilane D vapor deposition reaction.
  • the formation process of the fluorine-containing layer in the step 103 may be: after the porous layer is formed, inert gas is introduced, nitrogen/hydrogen and/or ammonia gas is stopped, and compound D is simultaneously introduced. , Adjust the plasma power to 30-150W, continue the plasma polymerization reaction, take out the sample after 10-60 minutes of vapor deposition, and then obtain the required multifunctional nano coating, that is, the low dielectric constant film.
  • the step 103 is after the step 102, that is, the fluorine-containing layer is formed after the porous layer is formed, in other words, the fluorine-containing layer is attached to the surface of the porous layer , Thereby greatly enhancing the hydrophobicity of the low dielectric constant film.
  • step 103 may also include step 1013, that is, making the substrate continue to move in the reaction chamber. That is, the fluorine-containing layer is formed under dynamic conditions.
  • a high temperature annealing step may also be included.
  • the pore-forming agent such as norbornadiene or ⁇ -terpinene, is not used to form the pore structure. Therefore, it is necessary to remove the pore-forming agent later. Therefore, high temperature annealing treatment is not necessary.
  • the reaction chamber or coating chamber has a volume of 10L to 2000L, and the process parameters can be adjusted according to coating requirements and the size of the coating chamber volume.
  • the plasma coating power range is 0.01W ⁇ 500W
  • the coating time is 30s ⁇ 7200s
  • the vaporization temperature is 30°C ⁇ 100°C
  • the cavity temperature is 20°C ⁇ 100°C
  • the flow rate can be selected as 0 ⁇ 1000sccm respectively.
  • the flow rate of oxygen and/or N 2 /H 2 , NH 3 , and hydrocarbons is set to be 1 to 200 sccm
  • the selectable range of the access frequency is from 10 s to 500 s.
  • the power is 100W
  • the coating time is 1800s
  • the vaporization temperature is 95°C.
  • the cavity temperature is room temperature
  • He atmosphere He flow rate is 10 ssccm
  • reactant gases A and B are introduced, which are vinyl oxirane and trimethyl vinyl silane, respectively, and the flow rates are 100 sccm and 100 sccm, respectively.
  • the flow rates are 100 sccm and 100 sccm respectively.
  • O 2 is introduced intermittently, the O 2 frequency is 300 seconds once, the power is changed to 50W, the coating time is 3600s, the vaporization temperature is 110°C, the cavity temperature is 25°C, the O 2 flow rate is 10 sccm, and the O 2 is closed after the coating time is completed. 2.
  • N 2 and H 2 are introduced into the reactant D perfluorooctyl dichlorophenyl silane, other parameters remain unchanged, after the coating is completed, the gas pressure is increased to normal pressure, and the sample is taken out to obtain the invention
  • the low-permittivity nano-coating with a porous structure, that is, the low-permittivity film is formed on the substrate.
  • the power is 100W
  • the coating time is 1800s
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature
  • the He atmosphere is 10 sccm
  • the reactants A and B, vinyl oxirane and trimethoxy vinyl silane are introduced, and the flow rates are 100 sccm and 100 sccm, respectively.
  • the flow of N 2 is 5 sccm, pass in reactants C and E, respectively
  • the flow rates are 100 sccm and 100 sccm respectively.
  • O 2 is introduced intermittently, the O 2 frequency is 300 seconds once, the power is changed to 50W, the coating time is 3600s, the vaporization temperature is 110°C, the cavity temperature is 25°C, the O 2 flow rate is 10 sccm, and the O 2 is closed after the coating time is completed. 2.
  • the power is 100W
  • the coating time is 1800s
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature
  • He atmosphere He
  • the flow rate is 10 sccm
  • the reactants A and B are introduced, which are allyl glycidyl ether and trimethyl vinyl silane, respectively, and the flow rates are 100 sccm and 100 sccm, respectively.
  • the reactants allyl glycidyl ether and trimethyl vinyl silane continue feeding He, and at the same time feeding NH 3 , the flow of NH 3 is 100 sccm, and the reactants C and E are fed, respectively These are tris-(triethoxysilane) phenylsilane and toluene, and the flow rates are 100 sccm and 100 sccm, respectively.
  • O 2 is fed in intermittently, the O 2 frequency is 150 seconds once, the power is changed to 50W, the coating time is 3600s, the vaporization temperature is 110°C, the cavity temperature is 25°C, and the O 2 and NH 3 are closed after the coating time is completed.
  • the power is 100W
  • the coating time is 1800s
  • the pressure is 80mTorr
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature.
  • Ar atmosphere He flow rate is 10 sccm
  • reactants A and B are introduced, which are 2,3-epoxypropyl dimethyl vinyl silane and dimethyl methoxy vinyl silane, and the flow rates are 80 sccm and 120 sccm, respectively.
  • the O 2 is fed in intermittently, the O 2 frequency is 150 seconds once, the power is changed to 50W, the coating time is 3600s, the vaporization temperature is 110°C, the cavity temperature is 25°C, the O 2 flow rate is 30sccm, and the O2 is turned off after the coating time is completed , Pass the reactant D perfluorooctylethyl pentafluorophenyl dimethoxysilane, the power is changed to 50W, the coating time is changed to 1800s, the pressure is 120mTorr, the vaporization temperature is 110°C, and the cavity temperature is 30°C After the coating is completed, the gas pressure is increased to normal pressure, and the sample is taken out to obtain the low-dielectric constant nano-coating with porous structure according to the present invention.
  • the power is 80W
  • the coating time is 3600s
  • the pressure is 80mTorr
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature.
  • Ar atmosphere Ar flow rate is 20 sccm
  • reactants A and B are introduced, which are 2,3-epoxypropyl dimethyl vinyl silane and trimethyl vinyl silane, and the flow rates are 80 sccm and 120 sccm, respectively.
  • O 2 is introduced intermittently, the O 2 frequency is 120 seconds once, the power is changed to 90W, the coating time is 3600s, the vaporization temperature is 110°C, the cavity temperature is 50°C, the O 2 flow rate is 80sccm, and the O 2 is closed after the coating time is completed. 2.
  • N 2 and H 2 pass the reactant D perfluorooctylethyl pentafluorophenyl dimethoxysilane, the power is changed to 80W, the coating time is changed to 1800s, the pressure is 120mTorr, and the vaporization temperature is 110°C , The cavity temperature is 30 DEG C, after the coating is completed, the gas pressure is increased to normal pressure, and the sample is taken out to obtain the low dielectric constant nano coating with porous structure according to the present invention.
  • the power is 80W
  • the coating time is 3600s
  • the pressure is 80mTorr
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature.
  • Ar atmosphere Ar flow rate is 20 sccm
  • reactants A and B are introduced, which are 2,3-epoxypropyl dimethyl vinyl silane and 4-styryl (trimethoxysiloxy) silane, and the flow rates are respectively 80sccm and 120sccm.
  • H 2 , N 2 and H 2 are 30 sccm and 90 sccm, respectively, and the reactants C and E are introduced, which are tris-(triethylsilane) phenyl silane and cyclopentane, respectively.
  • the flow rate is 20 sccm. And 180sccm.
  • O 2 is introduced intermittently, the O 2 frequency is 100 seconds once, the power is changed to 90W, the coating time is 3600s, the vaporization temperature is 110°C, the cavity temperature is 50°C, the O 2 flow rate is 20sccm, and the O 2 is closed after the coating time is completed. 2.
  • N 2 and H 2 pass the reactant D perfluorobutylethyl pentafluorophenyl dichlorosilane, the power is changed to 80W, the coating time is changed to 1800s, the pressure is 120mTorr, the vaporization temperature is 110°C, the cavity The body temperature is 30°C, after the coating is completed, the gas pressure is increased to normal pressure, and the sample is taken out to obtain the low dielectric constant nano coating with porous structure according to the present invention.
  • the power is 80W
  • the coating time is 3600s
  • the pressure is 80mTorr
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature.
  • Ar atmosphere Ar flow rate is 20 sccm
  • reactants A and B are introduced, respectively 2,3-epoxypropyldichlorovinylsilane and tetramethyltetravinylcyclotetrasiloxane, and flow rates are 150 sccm and 50 sccm, respectively.
  • H 2 and H 2 are 30 sccm sccm and 90 sccm sccm, and reactants C and E are introduced, which are trifluoropropyl methyl cyclotrisiloxane and benzene, respectively, and the flow rates are 50 sccm and 150 sccm, respectively.
  • O 2 is introduced intermittently, O 2 frequency is 600 seconds once, power is changed to 90W, O 2 flow is 50sccm, coating time is 3600s, vaporization temperature is 110°C, cavity temperature is 50°C, O 2 flow is 60sccm, coating After the time is over, turn off O 2 , N 2 and H 2 , and pass in reactant D perfluorobutylethyl pentafluorophenyl dimethoxysilane.
  • the power is changed to 80W, the coating time is changed to 3600s, and the pressure is 100mTorr.
  • the temperature is 110°C and the temperature of the cavity is 30°C.
  • the gas pressure is increased to normal pressure, and the sample is taken out to obtain the low dielectric constant nano-coating with porous structure of the present invention.
  • the power is 80W
  • the coating time is 3600s
  • the pressure is 80mTorr
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature.
  • Ar atmosphere Ar flow rate is 20 sccm
  • reactants A and B are introduced, respectively 2,3-epoxypropyldichlorovinylsilane and tetramethyltetravinylcyclotetrasiloxane, and flow rates are 150 sccm and 50 sccm, respectively.
  • N 2 and H 2 are 30 sccm and 90 sccm, respectively, and reactants C and E are passed through, which are tris-(triethylsilyl) phenyl silane and cyclohexane, respectively, and the flow rates are 20 sccm and 180 sccm, respectively.
  • O 2 is fed in intermittently, the O 2 frequency is 180 seconds once, the power is changed to 90W, the coating time is 3600s, the vaporization temperature is 110°C, the cavity temperature is 50°C, the O 2 flow rate is 30sccm, and the O 2 is closed after the coating time is completed. 2.
  • N 2 and H 2 pass the reactant D perfluorooctylethyl pentafluorophenyl dimethoxysilane, the power is changed to 80W, the coating time is changed to 1800s, the pressure is 120mTorr, and the vaporization temperature is 110°C , The cavity temperature is 30 °C, after the coating is completed, the gas pressure is increased to normal pressure, the sample is taken out, and finally annealed at 450 °C for 90 min, the low dielectric constant nanometer with porous structure of the present invention can be obtained. coating.
  • the power is 80W
  • the coating time is 3600s
  • the pressure is 80mTorr
  • the vaporization temperature is 95°C
  • the cavity temperature is room temperature.
  • Ar atmosphere Ar flow rate is 20 sccm
  • reactants A and B are introduced, respectively 2,3-epoxypropyldichlorovinylsilane and tetramethyltetravinylcyclotetrasiloxane, and flow rates are 150 sccm and 50 sccm, respectively.
  • the flow rates are 50sccm and 150sccm, respectively.
  • O 2 is introduced intermittently, the O 2 frequency is 150 seconds once, the power is changed to 90W, the coating time is 3600s, the O 2 flow rate is 20sccm, the vaporization temperature is 110°C, the cavity temperature is 50°C, and the O is closed after the coating time is completed. 2.
  • the power is changed to 80W
  • the coating time is changed to 1800s
  • the pressure is 100mTorr
  • the vaporization temperature is 110°C
  • the cavity temperature is 30
  • the gas pressure is increased to normal pressure and the sample is taken out to obtain the low dielectric constant nano coating with porous structure according to the present invention.
  • Example 9 Compared with Example 9, the anti-corrosion layer was not prepared. Take a clean PCB, place it in the fixture of the plasma coating equipment, pass in Ar, and directly pass in reactants C and E, which are hexamethyldisilazane and cyclopentane, respectively, and the flow rate is 100sccm. And 150sccm. O 2 is introduced intermittently, the O 2 frequency is 150 seconds once, the power is changed to 90W, the coating time is 3600s, the O 2 flow rate is 20sccm, the vaporization temperature is 110°C, the cavity temperature is 50°C, and the O is closed after the coating time is completed. 2.
  • the power is changed to 80W
  • the coating time is changed to 1800s
  • the pressure is 100mTorr
  • the vaporization temperature is 110°C
  • the cavity temperature is 30
  • the gas pressure is increased to normal pressure and the sample is taken out to obtain the low dielectric constant nano coating with porous structure according to the present invention.
  • the thickness of the nano-coating is measured by the American Filmetrics F20-UV-film thickness measuring instrument.
  • the water contact angle of the nano coating is tested according to the GB/T 30447-2013 standard.
  • the dielectric constant is tested according to the recommended method of GB/T 1409-2006 for measuring the permittivity and dielectric loss factor of electrical insulating materials at power frequency, audio frequency, and high frequency (including meter wave wavelength).
  • Salt spray resistance test is carried out in accordance with GB/T 2423.18-2000 Environmental Test Method for Electrical and Electronic Products.
  • the Young's modulus of the nano-coating is measured according to the technical specifications of JB/T 12721-2016 solid material in-situ nanoindentation/scratch tester.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230113130A (ko) * 2022-01-20 2023-07-28 성균관대학교산학협력단 플라즈마 중합체 박막 및 이의 제조 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110158052B (zh) 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 低介电常数膜及其制备方法
CN110129769B (zh) 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 疏水性的低介电常数膜及其制备方法
US11898248B2 (en) * 2019-12-18 2024-02-13 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and coating method
CN115400930A (zh) * 2021-05-26 2022-11-29 江苏菲沃泰纳米科技股份有限公司 一种等离子体聚合涂层、制备方法及器件
CN114438478B (zh) * 2022-01-27 2024-04-26 深圳市技高美纳米科技有限公司 硅基纳米涂层的制备方法、硅基纳米涂层和印制电路板组件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149987A (en) * 1998-04-07 2000-11-21 Applied Materials, Inc. Method for depositing low dielectric constant oxide films
US20020045359A1 (en) * 2000-04-28 2002-04-18 Todd Michael A. Fluorine-containing materials and processes
CN1389591A (zh) * 2001-05-23 2003-01-08 气体产品与化学公司 低介电常数材料以及通过cvd的加工方法
CN101065834A (zh) * 2004-08-24 2007-10-31 应用材料股份有限公司 以等离子体增强化学气相沉积制造具低应力的低k值介电质的低温工艺
CN102770580A (zh) * 2010-02-25 2012-11-07 应用材料公司 藉由等离子体增强化学气相沉积使用含有具有机官能基的硅的杂化前驱物所形成的超低介电材料
CN104968733A (zh) * 2012-12-31 2015-10-07 船井电机株式会社 液位感测槽材料
CN110158052A (zh) * 2019-05-17 2019-08-23 江苏菲沃泰纳米科技有限公司 低介电常数膜及其制备方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244730A (en) 1991-04-30 1993-09-14 International Business Machines Corporation Plasma deposition of fluorocarbon
JP3435186B2 (ja) 1993-04-15 2003-08-11 株式会社東芝 半導体装置
JP3545364B2 (ja) 2000-12-19 2004-07-21 キヤノン販売株式会社 半導体装置及びその製造方法
SG98468A1 (en) 2001-01-17 2003-09-19 Air Prod & Chem Organosilicon precursors for interlayer dielectric films with low dielectric constants
KR20030002993A (ko) 2001-06-29 2003-01-09 학교법인 포항공과대학교 저유전체 박막의 제조방법
JP3778045B2 (ja) 2001-10-09 2006-05-24 三菱電機株式会社 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
EP1504138A2 (en) * 2002-05-08 2005-02-09 Applied Materials, Inc. Method for using low dielectric constant film by electron beam
US20040137757A1 (en) * 2003-01-13 2004-07-15 Applied Materials, Inc. Method and apparatus to improve cracking thresholds and mechanical properties of low-k dielectric material
US7288292B2 (en) 2003-03-18 2007-10-30 International Business Machines Corporation Ultra low k (ULK) SiCOH film and method
US20040197474A1 (en) 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
JP4344841B2 (ja) 2003-05-30 2009-10-14 独立行政法人産業技術総合研究所 低誘電率絶縁膜の形成方法
US7646081B2 (en) 2003-07-08 2010-01-12 Silecs Oy Low-K dielectric material
US7030468B2 (en) 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
JP5093479B2 (ja) * 2005-11-24 2012-12-12 日本電気株式会社 多孔質絶縁膜の形成方法
US20070172666A1 (en) 2006-01-24 2007-07-26 Denes Ferencz S RF plasma-enhanced deposition of fluorinated films
CN101393865B (zh) * 2007-09-17 2010-10-13 联华电子股份有限公司 超低介电常数介电层及其形成方法
TWI510665B (zh) 2009-02-17 2015-12-01 東京威力科創股份有限公司 使用電漿反應製程來形成氟碳化物層的方法
US8178439B2 (en) 2010-03-30 2012-05-15 Tokyo Electron Limited Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices
US8216861B1 (en) 2011-06-28 2012-07-10 Applied Materials, Inc. Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
US9714463B2 (en) 2011-12-30 2017-07-25 Gvd Corporation Coatings for electrowetting and electrofluidic devices
TWI449802B (zh) 2012-06-06 2014-08-21 Univ Nat Chiao Tung 掺碳氮化矽薄膜及其製造方法與裝置
US9352891B2 (en) * 2012-12-28 2016-05-31 Ade, Inc. Suspension packaging structures and methods of making and using the same
GB201305500D0 (en) 2013-03-26 2013-05-08 Semblant Ltd Coated electrical assembly
US9607825B2 (en) 2014-04-08 2017-03-28 International Business Machines Corporation Hydrogen-free silicon-based deposited dielectric films for nano device fabrication
KR20160029985A (ko) 2014-09-05 2016-03-16 성균관대학교산학협력단 유전체에 균일하게 플라즈마를 발생시키는 방법
CN105280816A (zh) 2015-09-22 2016-01-27 复旦大学 一种使用等离子体交联技术制备有机场效应晶体管介电层的方法
CN106291911B (zh) 2016-08-10 2019-06-11 华南师范大学 复合层结构的疏水性介电层、其制备方法和电润湿器件
CN106496529B (zh) 2016-11-17 2019-01-18 北京航空航天大学 一种低介电常数二乙炔基聚合物、其制备方法及其用途
CN106958012A (zh) 2017-05-21 2017-07-18 无锡荣坚五金工具有限公司 一种基材运动式等离子体放电制备纳米涂层的设备及方法
CN107587120B (zh) 2017-08-23 2018-12-18 江苏菲沃泰纳米科技有限公司 一种具有调制结构的高绝缘纳米防护涂层的制备方法
CN109277269B (zh) 2018-10-24 2020-07-14 江苏菲沃泰纳米科技有限公司 一种环氧纳米涂层及其制备方法
CN110129769B (zh) 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 疏水性的低介电常数膜及其制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149987A (en) * 1998-04-07 2000-11-21 Applied Materials, Inc. Method for depositing low dielectric constant oxide films
US20020045359A1 (en) * 2000-04-28 2002-04-18 Todd Michael A. Fluorine-containing materials and processes
CN1389591A (zh) * 2001-05-23 2003-01-08 气体产品与化学公司 低介电常数材料以及通过cvd的加工方法
CN101065834A (zh) * 2004-08-24 2007-10-31 应用材料股份有限公司 以等离子体增强化学气相沉积制造具低应力的低k值介电质的低温工艺
CN102770580A (zh) * 2010-02-25 2012-11-07 应用材料公司 藉由等离子体增强化学气相沉积使用含有具有机官能基的硅的杂化前驱物所形成的超低介电材料
CN104968733A (zh) * 2012-12-31 2015-10-07 船井电机株式会社 液位感测槽材料
CN110158052A (zh) * 2019-05-17 2019-08-23 江苏菲沃泰纳米科技有限公司 低介电常数膜及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3971320A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230113130A (ko) * 2022-01-20 2023-07-28 성균관대학교산학협력단 플라즈마 중합체 박막 및 이의 제조 방법
KR102846208B1 (ko) * 2022-01-20 2025-08-19 성균관대학교산학협력단 플라즈마 중합체 박막 및 이의 제조 방법

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