WO2020062735A1 - 显示面板、显示屏及显示终端 - Google Patents
显示面板、显示屏及显示终端 Download PDFInfo
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- WO2020062735A1 WO2020062735A1 PCT/CN2019/072628 CN2019072628W WO2020062735A1 WO 2020062735 A1 WO2020062735 A1 WO 2020062735A1 CN 2019072628 W CN2019072628 W CN 2019072628W WO 2020062735 A1 WO2020062735 A1 WO 2020062735A1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
Definitions
- the present application relates to the field of display technology, and in particular, to a display panel, a display screen, and a display terminal.
- an embodiment of the present application provides a display panel, including: a substrate on which a pixel circuit is provided; a pixel-defining layer having a plurality of first openings on the pixel-defining layer; The light-emitting structure layer in the first opening to form a plurality of sub-pixels; the plurality of sub-pixels form a plurality of sub-pixel rows and a plurality of sub-pixel columns, and each sub-pixel in an adjacent sub-pixel row is misaligned, and / or, Each sub-pixel in an adjacent sub-pixel column is misaligned; a first electrode layer provided on the pixel circuit, the first electrode layer including a plurality of first electrodes, the pixel circuit and the first electrode In a one-to-one correspondence relationship, the sub-pixels correspond to the first electrodes one-to-one; a second electrode disposed above the light-emitting structure layer, the second electrode being a surface electrode; Scan lines and data lines, the scan lines provide voltage to the pixel circuit
- the first electrode of the sub-pixel is disposed on the same layer as the data line, and the first electrode and the data line are formed in the same process step, so The data lines are wound between corresponding first electrodes, and the sides of the data lines are not parallel to the sides of the first electrodes.
- the data line is disposed below the first electrode, and a projection of the data line on the substrate is a first projection, and the The projection of the light-emitting structure layer on the substrate is a second projection, and each of the first projections penetrates a plurality of the second projections.
- the pixel circuit includes only a switching device.
- the number of switching devices in the pixel circuit is one, and the switching devices include a first terminal, a second terminal, and a control terminal;
- the scanning line is connected to a control end of the switching device, the data line is connected to a first end of the switching device, and the first electrode is connected to a second end of the switching device.
- the first electrode is an anode
- the second electrode is a cathode
- the switching device is a thin film transistor (Thin Film Transistor, abbreviated as TFT)
- the first terminal is the source or drain of the driving TFT
- the second terminal is the drain or source of the driving TFT
- the control terminal is the gate of the driving TFT
- the driving TFT is a top gate structure or a bottom gate structure
- the thin film transistor may be an oxide thin film transistor or a low temperature polysilicon thin film transistor.
- one or more of the first electrode, the second electrode, the data line, and the scan line are made of a transparent conductive material Made; the light transmittance of the transparent conductive material is greater than 90%.
- the transparent conductive material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, or silver-doped indium zinc oxide.
- the scan line and the gate are formed in the same process step; or, the When the gate material is a metal material, the scan line is disposed above or below the gate.
- a plurality of the scan lines extend in a first direction
- a plurality of the data lines extend in a second direction. The first direction and the second direction intersect.
- a first pitch between adjacent scan lines there is a first pitch between adjacent scan lines, and the first pitch changes continuously or intermittently; and / or, adjacent
- a second pitch between the data lines there is a second pitch between the data lines, and the second pitch changes continuously or intermittently.
- the width of the scan line changes continuously or intermittently; and / or the width of the data line changes continuously or intermittently.
- both sides of the scanning line in the extending direction are wavy, and the crests of the two sides are opposite to each other, and The troughs are oppositely disposed; and / or, two sides of the data line in the extending direction are both wavy, and the crests of the two sides are oppositely disposed, and the troughs are oppositely disposed.
- a first connection portion is formed at the wave trough opposite to the scan line; the first connection portion is a strip, and the first The connection portion is an area where the scanning line is electrically connected to the switching device; and / or, a second connection portion is formed opposite to the wave trough of the data line; the second connection portion is in a strip shape, and the second connection The part is an area where the data line is electrically connected to the switching device.
- an embodiment of the present application provides a display screen including at least a first display area and a second display area, each display area is used to display a dynamic or static picture, and a photosensitive device may be disposed below the first display area.
- the first display area is provided with a display panel as described in the first aspect or any one of the first aspect of the present application, and the display panel provided in the second display area is a passive matrix organic light emitting device; Diode (Passive Matrix Organic Light-Emitting Diode (PMOLED) abbreviation) display panel or Active Matrix Organic Light-Emitting Diode (AMOLED) display panel.
- PMOLED Passive Matrix Organic Light-Emitting Diode
- AMOLED Active Matrix Organic Light-Emitting Diode
- the resolution of the first display area is lower than that of the second display area; the pixel-defining layer defines the plurality of pixels within the first display area.
- the first opening defines a plurality of second openings in the second display area, and the area of the second openings is smaller than the area of the first openings; the first display area is formed with a number and a position corresponding to the first openings.
- the first sub-pixels corresponding to the first opening are formed in the second display area, and the second sub-pixels are formed in the number and position corresponding to the second openings.
- the cathode of the display panel of the first display area and the The cathode of the display panel shares a whole surface electrode.
- an embodiment of the present application provides a display terminal, including: a device body having a device area; and the display screen according to the second aspect or any one of the implementation manners of the second aspect, covering the display screen. On the device body; wherein the device area is located below the first display area, and a light sensitive device for light collection through the first display area is provided in the device area.
- the device region is a slotted region; and the photosensitive device includes a camera and / or a light sensor.
- the display panel provided in the embodiment of the present application realizes a full-screen design, and on the display panel above the camera, the pixel circuit and the sub-pixel have a one-to-one driving relationship, which reduces the driving of Organic Light-Emitting Diode , Abbreviated as OLED) to increase the transparency of the display.
- OLED Organic Light-Emitting Diode
- a special wiring design is performed to achieve high transparency of the display panel while avoiding external light from entering the data lines and the first electrode (preferably It is an anode), which results in diffraction phenomenon, which improves the photographic effect of the full screen, avoids the interference between the data line and the first electrode, and prolongs the service life of the display panel.
- FIG. 1 is a schematic diagram of a specific example of a display panel in an embodiment of the present application.
- FIG. 2 is a schematic diagram of another specific example of a display panel in an embodiment of the present application.
- FIG. 3 is a schematic diagram of another specific example of a display panel in an embodiment of the present application.
- FIG. 4A and FIG. 4B are schematic diagrams of a structural relationship between a sub-pixel electrode and a data line of a specific example of a display panel in an embodiment of the present application;
- FIG. 4A and FIG. 4B are schematic diagrams of a structural relationship between a sub-pixel electrode and a data line of a specific example of a display panel in an embodiment of the present application;
- FIG. 5 is a schematic structural relationship diagram between a sub-pixel electrode and a data line of another specific example of a display panel in an embodiment of the present application;
- FIG. 6 is a schematic diagram of another specific example of a display panel in an embodiment of the present application.
- FIG. 7 is a schematic diagram of another specific example of a display panel in an embodiment of the present application.
- FIG. 8 is a schematic diagram of another specific example of a display panel in an embodiment of the present application.
- FIG. 9 is a schematic diagram of a specific example of scan lines of a display panel in an embodiment of the present application.
- FIG. 10 is a schematic diagram of another specific example of scan lines of the display panel in the embodiment of the present application.
- FIG. 11 is a schematic diagram of another specific example of scan lines of a display panel in an embodiment of the present application.
- FIG. 12 is a flowchart of a specific example of a method for forming a display panel in an embodiment of the present application
- FIG. 13 is a flowchart of a specific example of forming a switching device, a scan line, and a data line on a substrate in the method for forming a display panel in an embodiment of the present application;
- FIG. 14 is a schematic structural diagram of a specific example of a switching device in an embodiment of the present application.
- FIG. 15 is a schematic structural diagram of another specific example of a switching device in an embodiment of the present application.
- 16 is a structural diagram of a specific example of a display panel formed by a method of forming a display panel in an embodiment of the present application;
- 17 is a flowchart of another specific example of forming a switching device, a scan line, and a data line on a substrate in the method for forming a display panel in an embodiment of the present application;
- FIG. 18 is a structural diagram of another specific example of a display panel formed by a method of forming a display panel in an embodiment of the present application.
- FIG. 19 is a flowchart of a specific example of forming a one-to-one corresponding multiple sub-pixels on a switching device in a method of forming a display panel in an embodiment of the present application;
- 20A to 20C are schematic diagrams of a specific example of a display screen in an embodiment of the present application.
- 21 is a schematic structural diagram of a display panel using a fine mask to form a first light-emitting layer and a second light-emitting layer on a substrate according to an embodiment of the present application;
- FIG. 22 is a schematic diagram of a specific example of a display terminal in an embodiment of the present application.
- FIG. 23 is a schematic structural diagram of a device body according to an embodiment of the present application.
- 25 is a schematic diagram of a specific example of a driving chip of a method for driving a display panel in an embodiment of the present application;
- 26 is a schematic diagram of another specific example of a driving chip of a method for driving a display panel in an embodiment of the present application.
- 27A is a waveform diagram of a specific example of a data signal and a scan signal of a method of driving a display panel in an embodiment of the present application;
- 27B is a waveform diagram of another specific example of a data signal and a scan signal of a method of driving a display panel in an embodiment of the present application;
- FIG. 28 is a flowchart of a specific example of a method for driving a display screen in an embodiment of the present application.
- the display screen needs to achieve a certain degree of transparency, and it can meet the needs of cameras and other devices for display screen transparency.
- ITO Indium Tin Oxide
- the cathode and anode wiring of the OLED which can significantly improve the transparency of the display screen, but the electrode resistance of ITO is relatively large.
- the row direction of the line needs to bear the current of the entire row of sub-pixel OLEDs, and the instantaneous current of each sub-pixel is much higher than that of AMOLED.
- the high-resistance ITO electrode cannot withstand such a high current; although Ag or Mg
- the electrode resistance of / Ag is much smaller than that of ITO.
- Using Ag or Mg / Ag as the cathode can improve the current carrying capacity, but this will significantly reduce the transparency of the display screen.
- AMOLED is used for the transparent screen, the number of transistors required to drive the OLED is large, and the metal wiring is more complicated. The metal wiring will seriously affect the transparency of the display.
- the present application provides a display panel which is disposed above a camera.
- the pixel circuit and the sub-pixels provided in the display panel have a one-to-one corresponding driving relationship, and the pixel circuit is simple, and only a switching device can be provided. Reduce the number of transistors required to drive sub-pixels and increase the transparency of the display.
- the display panel includes: a substrate 1 and a pixel circuit 2 provided on the substrate 1; the pixel circuit 2 is provided with a first electrode layer, The first electrode layer includes a plurality of first electrodes 3, and the first electrodes 3 correspond to the pixel circuit 2.
- the first electrode here is an anode, and the first electrode layer is an anode layer.
- a pixel-defining layer 4 having a plurality of first openings 31; a light-emitting structure layer 5 disposed within the first opening 31 to form a plurality of sub-pixels; adjacent rows of a plurality of sub-pixels being staggered and arranged, and / Or, adjacent columns formed by a plurality of sub-pixels are staggered; a first electrode layer provided on the pixel circuit 2 includes a plurality of first electrodes 3, and the pixel circuit 2 and the first electrode 3 For a one-to-one correspondence relationship, the sub-pixels correspond to the first electrodes one by one; the scan lines and data lines connected to the pixel circuit 2 each provide voltage to the pixel circuit 2 to control the pixel circuit 2 to be turned on and off.
- each data line is used to respectively connect the sub-pixels of the same color and is spaced a predetermined distance from different seed pixels.
- multiple subpixels constitute multiple subpixel rows and multiple subpixel columns, and each subpixel in an adjacent subpixel row is misaligned, and / or, an adjacent subpixel The sub-pixels in the column are misaligned.
- the first region D1 has a plurality of first openings 31.
- a first sub-pixel (first light emitting layer 41) is formed in each of the first openings 31.
- the boxes with different fill patterns are used to represent the formed sub-pixels of different colors.
- the area where the boxes of the fill pattern are located represents the areas where the sub-pixels are formed.
- the color of the sub-pixels formed in the region is the same, and the color of the sub-pixels formed in the region of the box with different fill patterns is different.
- the three first sub-pixels 41 form a third pixel unit P1 (or P2).
- the three first sub-pixels 41 are different from each other, and are respectively a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
- the three first sub-pixels 41 are located in two adjacent rows, for example, in the first and second rows of the first region D1, respectively, and the three first sub-pixels 41 are located adjacent to each other.
- one of the first sub-pixels 41 is located at a middle position between the other two first sub-pixels 41.
- the three first sub-pixels 41 form a “pin” shape or an inverted “pin” shape.
- three first sub-pixels 41 having different colors form a first pixel unit P7.
- the three first sub-pixels 41 form a first pixel unit P7 having a dodecagon shape.
- the three first sub-pixels 41 are located in two adjacent rows and are adjacent to each other.
- the first light-emitting layer between the two dotted lines is called a row, and the three first sub-pixels 41 form a first pixel unit P7 having a dodecagon shape.
- the sizes of the structures on the display structure are enlarged. Therefore, the first sub-pixels located at the edge of the first region in FIG. 2 and FIG. 3 above are not complete structures, but attached here The figure is only schematic. In practical applications, the size of the first sub-pixel is small, and the first sub-pixel located at the edge of the first region usually has a complete structure.
- the data line is wound between the corresponding first electrodes 3, and the edge of the data line and the first electrode 3
- the sides are not parallel, and the predetermined distance between the data line and the unconnected first electrode 3 can prevent external light from diffracting when it enters the data line and the first electrode (preferably the anode), improving the overall screen
- the photo effect also avoids interference between the data line and the first electrode, and at the same time prolongs the service life of the display panel.
- the data line is disposed below the first electrode 3, the projection of the data line on the substrate 1 is a first projection, and the projection of the light-emitting structure layer 5 of the sub-pixel on the substrate 1
- each of the first projections runs through a plurality of second projections, and a predetermined distance is set between the data line and the first electrode 3 that is not connected, as shown in FIG. 5.
- R / G / B respectively represents the data lines of the red sub-pixel, the green sub-pixel, and the blue sub-pixel; the first electrodes 3 of the sub-pixels of different colors are represented by different shades of color; as can be seen from FIG. 5,
- the data line passes under the first electrode 3 of the sub-pixel.
- the substrate 1 may be a rigid substrate or a flexible substrate.
- the material of the hard substrate is, for example, a transparent material such as glass, quartz, or plastic
- the material of the flexible substrate is, for example, polyimide, polycarbonate, polyethylene terephthalate, or the like to improve the transparency of the device.
- the use of a flexible substrate can be suitable for making a flexible display panel.
- a second electrode 6 is disposed above the light-emitting structure layer 5, and the second electrode 6 is a cathode, and the cathode is a surface electrode, that is, formed of an entire surface electrode material. Whole surface electrode.
- the scanning line and the data line are both connected to the pixel circuit 2. The scanning line controls the opening and closing of the pixel circuit 2. When the pixel circuit 2 is turned on, the data line provides a driving current to the first electrode 3 to control the sub-pixels to emit light.
- the scanning line provides voltage to the pixel circuit to control the pixel circuit on and off. It only needs to provide the switching voltage required by the pixel circuit, which greatly reduces the load current of the scanning line.
- the driving current on the data line is directly provided to the first electrode to control the light emission of the sub-pixel.
- the data line only needs to supply the driving current of one sub-pixel at each moment, and the load of the data line is also small; multiple sub-pixels are shared
- the surface electrode (cathode) The current of one row of sub-pixels is provided by the entire surface cathode at each moment. The conductivity requirements of the cathode are greatly reduced. Highly transparent electrodes can be used to improve transparency and improve the consistency of the entire screen.
- the light emitting structure layer may be a light emitting structure layer between an anode and a cathode in an Organic Light-Emitting Diode (OLED).
- OLED Organic Light-Emitting Diode
- the pixel circuit 2 includes only a switching device and does not include elements such as a storage capacitor. Specifically, the pixel circuit only includes A switching device.
- the switching device includes a first terminal 2a, a second terminal 2b, and a control terminal 2c.
- the scanning line 7 is connected to the control terminal 2c of the switching device
- the data line 8 is connected to the first terminal 2a of the switching device
- the first electrode 3 is connected to the second terminal 2b of the switching device.
- the pixel circuit 2 includes a switching device. The switching device is provided in a one-to-one correspondence with the first electrode 3.
- the data line 8 is connected to the first terminal 2 a of the switching device.
- the scanning line 7 is connected to the control terminal 2 c of the switching device.
- Multiple sub-pixels correspond to multiple switching devices one-to-one, that is, one sub-pixel corresponds to one switching device.
- the data line is connected to the first end of the switching device, and the scanning line is connected to the control end of the switching device.
- the switching device in the pixel circuit is reduced to one. In the working process, only the switching voltage of the TFT needs to be input in the scanning line, and no input is required.
- the load current of the OLED greatly reduces the load current of the scanning lines, so that the scanning lines in this application can be made of transparent materials such as ITO. And the data line only needs to supply the current of one OLED pixel at each moment, and the load is also very small. Therefore, the data line can also use transparent materials such as ITO, thereby improving the light transmittance of the display screen.
- the switching device is a driving TFT
- the first terminal 2a is the source 21 of the driving TFT
- the second terminal 2b is the drain 22 of the driving TFT
- the control terminal 2c is The gate 23 of the driving TFT
- the driving TFT has a top-gate structure or a bottom-gate structure.
- the structure of the source 21 and the drain 22 of the TFT are the same and can be interchanged.
- the source of the thin film transistor is used as the first terminal
- the drain of the thin film transistor is used as the first terminal.
- the drain of the thin film transistor can be used as the first terminal, and the source of the thin film transistor can be used as the second terminal.
- the switching device may also be a metal-oxide semiconductor field-effect transistor (Metal-Oxide-Semiconductor, Field-Effect, Transistor, MOSFET), or other components that have conventional switching characteristics, such as Insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT for short), etc., as long as the electronic components that can realize the switching function in this embodiment and can be integrated into the display panel fall into the protection scope of this application.
- the thin film transistor may be an oxide thin film transistor or a low temperature polycrystalline silicon thin film transistor (Low Temperature, Silicon Thin Film, Transistor, LTPS), and the thin film transistor is preferably indium gallium zinc oxide Thin film transistor (Indium, Gallium, Zinc, Oxide, Film, Transistor, abbreviated as IGZO, TFT).
- the low-temperature polysilicon thin film transistor has high electron mobility, high resolution, simpler design, and better display effect; the oxide thin film transistor has high optical transmittance, mature technology, and simple preparation.
- the thin film transistor when the thin film transistor is provided in a top-gate structure, as shown in FIG. 7, it includes: an active layer 25 and a gate insulating layer 24 provided on the active layer 25; A gate 23 on the gate insulating layer 24, the gate 23 is connected to the scanning line; an interlayer insulating layer 26 provided on the gate 23; a source electrode 21 and a drain electrode 22 provided on the interlayer insulating layer 26; The above active layer, gate insulating layer, gate layer, interlayer insulating layer, source and drain constitute a switching device TFT.
- a planarization layer 27, a source 21 and a drain are provided on the source 21 and the drain 22.
- the electrode 22 is connected to the data line 8 and the first electrode 3 through a through hole on the planarization layer 27, respectively.
- the number of photolithographic masks required for the top-gate TFT is small, the manufacturing process is simple, and the cost is low.
- the gate when the thin film transistor is configured as a bottom-gate structure, as shown in FIG. 8, the gate includes a gate 23 disposed on the scan line 7, and the gate 23 is connected to the scan line 7; A gate insulating layer 24, an active layer 25, and an interlayer insulating layer 26 stacked in this order; a source electrode 21 and a drain electrode 22 provided on the interlayer insulating layer 26; and a source electrode 21 and a drain electrode 22 provided on the interlayer insulating layer 26; The planarization layer 27, the source electrode 21 and the drain electrode 22 are connected to the data line 8 and the first electrode 3 through a through hole in the planarization layer 27, respectively.
- the manufacturing process of the bottom gate structure is complicated, and the gate and the gate insulating layer of the TFT can be used as an optical protective film with good optical characteristics.
- the gate may be made of a transparent conductive material or a metal material.
- the scan line is connected to the gate.
- the transparent conductive material is used to make the gate, in order to simplify the process steps and save the process flow, the scan line and the gate can be formed in the same process step.
- the scan lines and the gate electrodes are both made of ITO material.
- a layer of ITO may be prepared first, and the ITO is patterned through the first mask to form the scan lines and The gate is shown in Figure 15.
- the scan lines can be arranged above or below the gate, so that the gate and the scan line need to be formed separately, as shown in FIG. 14.
- both the data line and the first electrode are formed in the same process step.
- both the data line and the first electrode may be made of ITO material to prepare a whole surface of ITO, and patterning the ITO through a second mask to form the data line and the first electrode at the same time;
- the data line and the first electrode material when the data line and the first electrode material are different, the data line and the first electrode may be formed separately.
- the first electrode, the second electrode, the data line, and the scanning line are made of a transparent conductive material, and the light transmittance of the transparent conductive material is greater than 90%. Therefore, the light transmittance of the entire display panel can be more than 70%, and the transparency of the display panel is higher.
- the transparent conductive material used for the first electrode, the second electrode, the data line, and the scan line may be indium tin oxide (ITO), indium zinc oxide (IZO), or doped Silver indium tin oxide (Ag + ITO) or silver-doped indium zinc oxide (Ag + IZO). Because the ITO process is mature and the cost is low, the conductive material is preferably indium zinc oxide. Further, in order to reduce the resistance of each conductive trace while ensuring high light transmittance, the transparent conductive material is made of aluminum-doped zinc oxide, silver-doped ITO, or silver-doped IZO.
- the transparent conductive material may also use other conventional materials, which may be set reasonably according to actual needs, which is not limited in the embodiments of the present application.
- at least one of the first electrode, the second electrode, the data line, and the scan line is made of a transparent conductive material.
- the plurality of scan lines extend in a first direction
- the plurality of data lines extend in a second direction
- the first direction and the second direction intersect.
- the scanning line extends in the X direction
- the data line extends in the Y direction
- the projections of the data line and the scanning line on the substrate are perpendicular to each other
- the two sides of the scanning line in the extending direction are waves.
- Shape and the two sides of the data line in its extension direction are also wavy.
- the wavy data line and scan line can generate diffraction fringes with different positions and diffusion directions, thereby weakening the diffraction effect and ensuring that the camera is set on the display.
- the graphics obtained by taking pictures have a higher definition.
- the scanning lines are wavy, adjacent scanning lines have a first interval, and the first interval continuously changes or intermittently changes; the width of the scanning lines continuously changes or intermittently changes.
- Continuous width change means that the widths at any two adjacent positions on the scan line are different.
- the extending direction of the scanning line is its length direction.
- the width of the scanning line changes continuously in the extending direction.
- the discontinuous change in width means that the widths of two adjacent positions in a partial region on the scan line are the same, and the widths of two adjacent positions in a partial region are different.
- a plurality of scanning lines are regularly arranged on the substrate, and therefore, a gap between two adjacent scanning lines also appears to change continuously or intermittently in a direction parallel to the extending direction of the scanning lines.
- the scanning line can be periodically changed in the extending direction regardless of whether the width of the scanning line is continuous or discontinuous.
- Both sides of the scanning line in the extending direction are wavy, and the crests of the two sides are oppositely arranged, and the troughs are relatively opposite.
- the peaks T of the two sides in the extension direction are oppositely arranged and the valleys B are relatively opposite.
- the width between the peaks of the same scan line is W1
- the width between the valleys of the same scan line is W2.
- the interval between the peaks of two scanning lines is D1
- the interval between the valleys of two adjacent scanning lines is D2.
- the two sides are connected by the same arc-shaped side. In other embodiments, the two sides may also be formed by connecting the same oval side, as shown in FIG. 10.
- both sides of the scanning line into a wavy shape formed by a circular arc or an ellipse, it can be ensured that the diffraction fringes generated on the scanning line can be diffused in different directions, and no more obvious diffraction effect is generated.
- a first connection portion is formed at the wave trough opposite to the wave trough, and the first connection portion may be a straight line or a curved line.
- the first connection portion is in a strip shape, and the first connection portion is an area where the scanning line is electrically connected to the switching device, that is, the position where the control end of the switching device is connected to the first connection portion.
- the connecting portion may also adopt other irregular structures, such as a shape with a large middle end and a small shape with a large middle end.
- the data lines are wavy, adjacent data lines have a second distance therebetween, and the second distance changes continuously or intermittently; the width of the data lines continuously changes or intermittently changes.
- the data line is similar to the scan line.
- the data line may adopt any wave shape shown in FIG. 9 to FIG. 11.
- the two sides of the data line in the extension direction are wavy.
- the crests of the two sides are opposite to each other, and the troughs are opposite to each other.
- a second connection portion is formed opposite the trough of the data line.
- the electrical connection area of the device The settings of the data line and the scan line are similar. For details, see the settings of the scan line.
- the scanning lines and data lines on the display panel use any of the wavy shapes shown in Figures 9-11, which can ensure that in the extension direction of the data line and scanning line traces, the light passes through the positions of different widths and adjacent traces. It is possible to form diffractive stripes with different positions at different gaps, thereby reducing the diffractive effect, so that the photosensitive device placed under the display panel can work normally.
- the scanning line in the display panel is connected to the control terminal of the switching device. It only needs to provide the switching voltage of the switching device, and does not need to provide the driving current flowing through the light-emitting device, which greatly reduces the load current of the scanning line. End, the data line only needs to supply a sub-pixel driving current at each moment, so the load of the data line is also small; the load of the data line and the scan line is very small, so the data line and the scan line can be made of transparent materials (such as ITO) production, which significantly improves the transparency of the display panel; the cathode is a whole surface structure, and does not require negative photoresist to separate the cathode.
- transparent materials such as ITO
- the current of one row of OLEDs is provided by the entire surface of the cathode, so the conductivity of the cathode is greatly Reduce, can use high transparent cathode, improve transparency; solve the contradiction between the wiring of the transparent OLED screen and the cathode resistance and transparency, and can be compatible with the conventional display manufacturing process.
- the display panel provided in the embodiment of the present application realizes a full-screen design, and on the display panel above the camera, the pixel circuit and the sub-pixel have a one-to-one driving relationship, reducing the number of transistors required to drive the OLED and improving The transparency of the display.
- a special wiring design is performed to achieve high transparency of the display panel while avoiding external light from entering the data lines and the first electrode (preferably It is an anode), which results in diffraction phenomenon, which improves the photographic effect of the full screen, avoids the interference between the data line and the first electrode, and prolongs the service life of the display panel.
- An embodiment of the present application further provides a method for forming a display panel. As shown in FIG. 12, the method includes the following steps:
- Step S1 forming a switching device, a scanning line, and a data line;
- the switching device includes a first terminal, a second terminal, and a control terminal, the data line is connected to the first terminal of the switching device, and the scanning line is connected to the control terminal of the switching device.
- step S1 specifically includes steps S111-S117:
- Step S111 forming a plurality of active layers 25 on the substrate 1.
- the substrate 1 may be a rigid substrate, such as a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate; the substrate 1 may also be a flexible substrate such as a PI film.
- a P-Si layer is formed on the substrate. Due to its own process, the P-Si layer includes a shielding layer 28 and an active layer 25 that are sequentially stacked. The shielding layer functions to isolate oxygen, water, and the like. At the same time, a good interface is formed with the active layer. Specifically, the entire P-Si layer can be formed on the substrate, and then a photoresist is coated on the entire P-Si layer, and an active layer mask (PSI mask) is used for exposure to form a pattern. ⁇ ⁇ Active layer 25.
- PSI mask active layer mask
- the active layer may be made of polysilicon material to form a polysilicon thin film transistor; the polysilicon may also be crystallized to obtain a crystalline thin film transistor.
- the active layer can also be made of amorphous silicon, which can be set reasonably as needed.
- Step S112 forming a gate insulating layer 24 on the plurality of active layers 25.
- the gate insulating layer may be specifically prepared by a chemical vapor deposition method.
- other conventional methods may also be used to form the gate insulating layer, which is not limited in the embodiment of the present application.
- the material of the gate insulating layer may be silicon oxide or silicon nitride, etc., and can be set reasonably according to requirements.
- Step S113 forming a scan line 7 on the gate insulating layer 24 and a gate 23 corresponding to each active layer 25, and the gate 23 is connected to the scan line 7.
- the scan line 7 is made of indium tin oxide (ITO) material
- the gate electrode 23 is made of a metal material.
- the entire surface of the gate insulating layer 24 is formed with an ITO layer, and then a mask is used.
- the film plate forms a patterned scanning line 7, and then a metal gate is formed on the gate insulating layer.
- the gate and the scanning line are located on the same layer and connected to the scanning line, as shown in FIG. 14.
- the scan line 7 is made of indium zinc oxide (IZO) material, and can also be made of other conventional transparent conductive materials.
- IZO indium zinc oxide
- the order of the step of forming the gate and the step of forming the scan line can be adjusted according to the process, which is not limited herein.
- both the scan line 7 and the gate 23 are made of indium tin oxide (ITO) material. Specifically, the entire surface of the ITO layer is formed on the gate insulating layer 24, and then a mask is used at the same time. A patterned scan line 7 and a gate 23 are formed. The gate and the scan line are located on the same layer and connected to the scan line. The manufacturing process is simpler and easier to operate, as shown in FIG. 15.
- ITO indium tin oxide
- Step S114 An interlayer insulating layer 26 is formed on the plurality of gate electrodes 23.
- the interlayer insulating layer may be specifically prepared by a chemical vapor deposition method.
- other conventional methods may also be used to form the interlayer insulating layer, which is not limited in the embodiment of the present application.
- the material of the interlayer insulating layer may be silicon oxide or silicon nitride, etc., and can be set reasonably according to requirements.
- Step S115 A source electrode 21 and a drain electrode 22 corresponding to each active layer 25 are formed on the interlayer insulating layer 26.
- the source 21 and the drain 22 may be made by any conventional method.
- the source electrode 21 and the drain electrode 22 are made of metal materials, such as a single-layer metal material or a metal stack with good conductivity such as Ti, Ti / Al / Ti, or Ag.
- Step S116 A planarization layer 27 is formed on the source electrode 21 and the drain electrode 22.
- the planarization layer 27 has through holes corresponding to the source electrode 21 and the drain electrode 22, respectively.
- the corresponding source 21 and drain 22 are exposed at the through holes.
- the planarization layer is made by any conventional method.
- the through hole may be prepared by a wet etching process on the planarization layer, and may also be prepared by other conventional methods, such as dry etching.
- Step S117 A data line 8 is formed on the planarization layer 27, and the data line 8 is connected to the source electrode 21 through a via hole.
- the above-mentioned data line 8 can be obtained by any conventional method.
- the data line 8 is made of indium tin oxide (ITO) material, and can also be made of indium zinc oxide (IZO) material, and can also be made of other conventional transparent conductive materials.
- ITO indium tin oxide
- IZO indium zinc oxide
- step S1 specifically includes steps S121-S128:
- Step S121 A scan line 7 is formed on the substrate 1.
- the scan line 7 is made of indium tin oxide (ITO) material, specifically, an entire ITO layer is formed on the substrate, and then a patterned scan line 7 is formed using a mask.
- ITO indium tin oxide
- the substrate 1 may be a rigid substrate, such as a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate; the substrate 1 may also be a flexible substrate such as a PI film.
- Step S122 forming a plurality of gates 23 connected to the scan lines 7, and the gates 23 are connected to the scan lines 7.
- the above-mentioned gate can be made by any conventional method.
- Step S123 A gate insulating layer 24 is formed on the plurality of gates 23.
- the gate insulating layer may be specifically prepared by a chemical vapor deposition method.
- other conventional methods may also be used to form the gate insulating layer, which is not limited in the embodiment of the present application.
- the material of the gate insulating layer may be silicon oxide or silicon nitride, etc., and can be set reasonably according to requirements.
- Step S124 An active layer 25 corresponding to each gate electrode 23 is formed on the gate insulating layer 24.
- the active layer 25 may be obtained by any conventional method.
- the active layer may be made of an oxide material, such as an indium gallium zinc oxide (IGZO) material.
- IGZO indium gallium zinc oxide
- Step S125 forming an interlayer insulating layer 26 on the plurality of active layers 25.
- the interlayer insulating layer may be specifically prepared by a chemical vapor deposition method.
- other conventional methods may also be used to form the interlayer insulating layer, which is not limited in the embodiment of the present application.
- the material of the interlayer insulating layer may be silicon oxide or silicon nitride, etc., and can be set reasonably according to requirements.
- Step S126 A source electrode 21 and a drain electrode 22 corresponding to each active layer 25 are formed on the interlayer insulating layer 26.
- the source 21 and the drain 22 may be made by any conventional method.
- Step S127 A planarization layer 27 is formed on the source electrode 21 and the drain electrode 22.
- the planarization layer 27 has through holes corresponding to the source electrode 21 and the drain electrode 22, and the corresponding source electrode 21 and the drain electrode 22 are exposed at the through holes. .
- Step S128 A data line 8 is formed on the planarization layer 27, and the data line 8 is connected to the source electrode 21 through a through hole.
- the above-mentioned data line 8 can be obtained by any conventional method.
- the data line 8 is made of indium tin oxide (ITO) material.
- FIG. 18 A structural diagram of the display panel obtained through the above steps is shown in FIG. 18.
- Step S2 forming a first electrode 3, a pixel defining layer 4, a light emitting structure layer 5 and a second electrode 6 on the switching device, a plurality of light emitting structure layers 5 sharing the second electrode 6, and a plurality of light emitting structure layers 5
- An electrode 3 is respectively connected to the second terminal 2b of the switching device.
- step S2 specifically includes steps S21-S24:
- Step S21 A corresponding first electrode 3 is formed on the drain electrode 22 of the thin film transistor, and the first electrode 3 is connected to the drain electrode 22.
- the first electrode 3 is specifically formed on the planarization layer 27.
- the first electrode 3 is made of ITO material, and the ITO material is connected to the drain electrode 22 after filling the through hole.
- the data line and the first electrode are on the same layer and can be prepared at the same time.
- the planarization layer 27 is covered with the entire surface of ITO material, and then the patterned data line and the first electrode are realized through a mask. This makes the manufacturing process simple and saves costs. In order to reduce the diffraction, please refer to the description of the display panel in the embodiment of the present application for the shape of the first electrode, which will not be repeated here.
- Step S22 A pixel defining layer 4 is formed on the first electrode 3.
- the pixel-defining layer 4 includes a plurality of openings, and each opening corresponds to a first electrode, and the opening exposes the first electrode.
- the sides of the projection of the opening formed on the pixel defining layer 4 on the substrate are not parallel to each other and each side is a curve, that is, the opening has a varying width in all directions and is at the same position.
- Step S23 A light-emitting structure layer 5 corresponding to the first electrodes 3 is formed on the pixel-defining layer 4.
- the light-emitting structure layer 5 is specifically formed on the opening, and the light-emitting structure layer 5 may be prepared by any conventional method.
- Step S24 forming a second electrode 6 on the light-emitting structure layer 5, and the plurality of light-emitting structure layers 5 share the second electrode 6.
- the entire second electrode 6 is formed on the plurality of light emitting structure layers 5 and the pixel defining layer 4.
- the second electrode 6 may be made of ITO material.
- An embodiment of the present application further provides a display screen including at least a first display area and a second display area, each of which is used to display a dynamic or static picture, and a photosensitive device may be disposed below the first display area;
- the display area is provided with the display panel mentioned in any of the above embodiments, and the display panel provided in the second display area is a PMOLED display panel or an AMOLED display panel. Because the first display area uses the display panel in the foregoing embodiment, it has higher transparency and better overall consistency of the display screen; and when light passes through the display area, it will not produce a more obvious diffraction effect, so It can ensure that the photosensitive device located under the first display area can work normally.
- the first display area can normally perform dynamic or static screen display when the photosensitive device is not working, and it needs to be in a non-display state when the photosensitive device is working, so as to ensure that the photosensitive device can pass normal light through the display panel. collection.
- the transparency of the first display area is significantly improved, and the contradiction between the wiring of the transparent OLED screen, the cathode resistance, and the transparency is well solved, and it is compatible with the manufacturing process of the normal display screen, and the production cost is low.
- the display screen includes a first display area 161 and a second display area 162, and the first display area 161 and the second display area 162 are both used to display a static or dynamic picture, where
- the first display area 161 adopts the display panel mentioned in any of the above embodiments, and the first display area 161 is located at an upper part of the display screen.
- the display screen includes a first area D1 and a second area D2, and an area of the second area D2 is larger than an area of the first area D1, and the first area D1 Resolution is lower than the second region D2; a plurality of first openings 31 are defined in the first region D1, a plurality of second openings 32 are defined in the second region D2, and the area of the first opening 31 is larger than that of the second opening Area of 32.
- the first light-emitting layer 41 and the second light-emitting layer 42 can be formed by vapor deposition using the same fine mask 200.
- the fine mask 200 with the openings 201 having the same area and shape can be used.
- the fine mask 200 is aligned with the substrate 10, and each of the openings 201 of the fine mask 200 corresponds to the area where the light emitting layer of this color is to be formed.
- each opening 201 Corresponding to the position of one first opening 31 in the first region D1, one opening 201 corresponds to the position of a plurality of adjacent second openings 32 in the second region D2.
- the light-emitting layer is formed by a vapor deposition process
- light-emitting layers having the same light emission color can be formed by vapor deposition at the same time.
- the second light-emitting layers 42 of the same color and corresponding in number to the second openings 32 may be simultaneously vapor-deposited in the imaginary openings formed on the outer edges of the adjacent second openings 32, and at the same time in each of the first openings 31 A first light emitting layer 41 is formed inside.
- three second sub-pixels 42 form one first pixel unit P3 (or P4).
- the three second sub-pixels 42 are different from each other, and are respectively a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
- the three second sub-pixels 42 are located in two adjacent rows, for example, in the second and third rows of the second region D2, respectively, and the three second sub-pixels 42 are adjacent to each other.
- one of the second sub-pixels 42 is located in the middle of the other two second sub-pixels 42, and the three second sub-pixels 42 form a “pin” shape or an inverted “pin” shape.
- three second sub-pixels 42 form one second pixel unit P8.
- the three second sub-pixels 42 are different from each other, and are respectively a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
- the three second sub-pixels 42 are three second sub-pixels 42 located in two adjacent rows and adjacent positions.
- Each second sub-pixel 42 has a diamond shape.
- the three second sub-pixels can be formed as The second sub-pixel unit shown in the figure is a regular hexagon.
- the sizes of the structures on the display structure are enlarged. Therefore, the second sub-pixels located at the edges of the second region in FIG. 20B and FIG. 20C are not complete structures.
- the drawings herein are only schematic. In actual applications, the size of the second sub-pixel is small, and the second sub-pixel located at the edge of the second region usually has a complete structure.
- the display screen may further include three or more display areas, such as including three display areas (a first display area, a second display area, and a third display area).
- the first display area uses The display panel mentioned in any of the above embodiments, which display panel is used in the second display area and the third display area is not limited in the embodiment of the present application, and may be a PMOLED display panel or an AMOLED display panel. Of course, the display panel in the embodiment of the present application can also be used.
- the cathode of the display panel of the first display area and the cathode of the display panel of the second display area share a whole surface electrode.
- the coplanar cathode makes the manufacturing process simple, and further reduces the conductivity requirements of the cathode.
- Highly transparent electrodes can be used, which improves transparency and improves the consistency of the entire screen.
- An embodiment of the present application further provides a display device including the above display screen covered on the device body.
- the display device may be a product or component having a display function, such as a mobile phone, a tablet, a television, a display, a palmtop computer, an ipod, a digital camera, a navigator, and the like.
- the display terminal includes a device body 810 and a display screen 820.
- the display screen 820 is disposed on the device body 810 and is connected to the device body 810.
- the display screen 820 may use the display screen in any of the foregoing embodiments to display a static or dynamic picture.
- FIG. 23 is a schematic structural diagram of a device body 810 in an embodiment.
- the device body 810 may be provided with a slotted area 812 and a non-slotted area 814.
- Photosensitive devices such as a camera 930 and a light sensor may be disposed in the slotted area 812.
- the display panel of the first display area of the display screen 820 is bonded to the slotted area 812 so that the above-mentioned photosensitive devices such as the camera 930 and the light sensor can pass external light through the first display area. Acquisition and other operations.
- the display panel in the first display area can effectively improve the diffraction phenomenon caused by external light transmitted through the first display area, the quality of the image captured by the camera 930 on the display device can be effectively improved, and the image captured by the diffraction can be avoided. Distortion can also improve the accuracy and sensitivity of the light sensor to sense external light.
- the embodiment of the present application further provides a method for driving the display panel described in any one of the above embodiments.
- the method is used to drive an IC to control the display of the display panel. As shown in FIG. 24, the method includes the following step S231. And S232:
- Step S231 Send a scanning signal to the scanning line, so that the scanning line controls a row of pixel circuits to be turned on at the same time.
- Step S232 Send a data signal to the data line, so that when the pixel circuit is turned on, the data line provides a driving current to the first electrode to control the sub-pixel to emit light.
- the pulse width of the data line is controlled to control the light emission brightness of the sub-pixel.
- the driving current of the sub-pixel is adjusted by the pulse width. The larger the driving current, the higher the brightness of the sub-pixel.
- the scanning signal and the data signal are sent to the scanning line and the data line through a driving chip.
- the driving chip is a PMOLED driving chip (PMIC). Provided by IC, share one IC, no need to add additional driver chip, reduce cost.
- the data signal is sent to the data line through the driving chip, and the driving chip is a PMOLED driving chip (PMIC); the scanning signal is sent to the scanning through a shift register circuit (such as a GIP circuit).
- PMIC PMOLED driving chip
- the control method is simple.
- PMOLED's IC is used to generate scanning signals and data signals; the current during the charge and discharge of the light-emitting device needs to be calculated to determine the width-to-length ratio and voltage of the switching device; the specific voltage setting is determined by the IC's output capability and simulation.
- the switching device is a P-type driving TFT, the scanning signal is driven at a low voltage, and the waveforms of the scanning signal and the data signal are shown in FIG. 27A.
- the switching device is an N-type driving TFT, the scanning signal is driven at a high voltage. The waveform of the data signal is shown in Figure 27B.
- An embodiment of the present application further provides a method for driving a display screen according to any one of the foregoing embodiments.
- the display screen includes a first display area and a second display area, that is, the display screen is a screen including at least two screens.
- the composite screen, as shown in Figure 28, includes the following steps S271-S273:
- Step S271 sending a first scanning signal to the scanning lines in the first display area, so that the scanning lines control a row of pixel circuits at the same time;
- Step S272 Send a first data signal to the data line in the first display area, so that when the pixel circuit is turned on, the data line provides a driving current to the first electrode to control the sub-pixel to emit light;
- Step S273 Send a second scan signal to the scan lines in the second display area, and send a second data signal to the data lines in the second display area.
- the first scan signal and the second scan signal are synchronized.
- the trigger signal at the same time starts the first The scanning process of the display area and the second display area, but the frequency of the first scanning signal and the frequency of the second scanning signal may be different, preferably the frequency of the first scanning signal is an integer multiple of the frequency of the second scanning signal, or the second scanning The frequency of the signal is an integer multiple of the frequency of the first scan signal. This can trigger the scanning signal at the same time, which is beneficial to the synchronous display of the screen.
- the first scan signal and the first data signal are sent through the first drive chip
- the second scan signal and the second data signal are sent through the second drive chip
- the first drive chip is a PMOLED drive chip.
- the second drive chip is determined according to the type of the panel in the second display area. If the panel in the second display area is AMOLED, the second drive chip is an AMOLED drive chip. If the panel in the second display area is PMOLED, the first The two driving chips are PMOLED driving chips.
- a dedicated driving chip may also be provided for the types of panels in the first display area and the second display area, so that the first scan signal, the first data signal, the second scan signal, and the second data
- the signals can be sent by the same driver chip.
- the synchronization of the first scanning signal and the second scanning signal is realized in the dedicated chip.
- a second scan signal is sent to a scan line in the second display area, and a second data signal is sent to a data line in the second display area, specifically: : Sending a second scanning signal to the scanning line in the second display area, and sending a second data signal to the data line in the second display area, so as to control the current of the power line to be input to the corresponding sub-pixel through the driving transistor to control the corresponding Subpixels glow.
- a second scan signal is sent to a scan line in the second display area
- a second data signal is sent to a data line in the second display area
- the number of composite screens when the number of composite screens is three or more, it may also be controlled by driving each individual display area separately and driving the synchronous display by a synchronization signal.
- the above manner is also within the protection scope of the concept of the present application.
- the scanning method of the second display area is not limited to the top-to-bottom or bottom-to-bottom scanning method shown in FIGS. 25 and 26.
- the scanning start position of the second display area may also be the middle position of the second display area, and the two ends are scanned sequentially.
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Abstract
Description
Claims (20)
- 一种显示面板,包括:基板,所述基板上设置有像素电路;像素限定层,所述像素限定层上具有多个第一开口;设置在多个所述第一开口内的发光结构层,以形成多个子像素;所述多个子像素形成多个子像素行和多个子像素列,相邻的子像素行中的各个子像素错位排列,和/或,相邻的子像素列中的各个子像素错位排列;设置于所述像素电路上的第一电极层,所述第一电极层包括多个第一电极,所述像素电路与所述第一电极为一一对应关系,所述子像素与所述第一电极一一对应;设置于所述发光结构层上方的第二电极,所述第二电极为面电极;与所述像素电路均连接的扫描线和数据线,所述扫描线为所述像素电路提供电压,以控制所述像素电路的开启和关闭,在所述像素电路开启时,来自所述数据线上的驱动电流直接提供给所述第一电极,以控制所述子像素发光。
- 根据权利要求1所述的显示面板,其中,所述子像素的第一电极与所述数据线同层设置,所述第一电极与所述数据线在同一工艺步骤中形成,所述数据线绕设于相应的第一电极之间,且所述数据线的边与所述第一电极的边不平行。
- 根据权利要求1所述的显示面板,其中,所述数据线设置于所述第一 电极的下方,所述数据线在所述基板上的投影为第一投影,所述子像素的发光结构层在所述基板上的投影为第二投影,每个所述第一投影均贯穿多个所述第二投影。
- 根据权利要求1所述的显示面板,其中,所述像素电路仅包括开关器件。
- 根据权利要求4所述的显示面板,其中,所述像素电路中的开关器件的数量为1个,所述开关器件包括第一端、第二端和控制端;所述扫描线与所述开关器件的控制端连接,所述数据线连接所述开关器件的第一端,所述第一电极连接所述开关器件的第二端。
- 根据权利要求5所述的显示面板,其中,所述第一电极为阳极,所述第二电极为阴极;所述开关器件为驱动薄膜晶体管,所述第一端为所述驱动薄膜晶体管的源极或漏极,所述第二端为所述驱动薄膜晶体管的漏极或源极,所述控制端为所述驱动薄膜晶体管的栅极;所述驱动薄膜晶体管为顶栅结构或底栅结构。
- 根据权利要求6所述的显示面板,其中,所述驱动薄膜晶体管可以为氧化物薄膜晶体管或者低温多晶硅薄膜晶体管。
- 根据权利要求6所述的显示面板,其中,所述第一电极、第二电极、数据线以及扫描线中的一个或多个采用透明导电材料制成;所述透明导电材料的透光率大于90%。
- 根据权利要求8所述的显示面板,其中,所述透明导电材料为氧化铟锡、氧化铟锌、掺杂银的氧化铟锡或者掺杂银的氧化铟锌。
- 根据权利要求9所述的显示面板,其中,所述栅极材料为透明导电材料时,所述扫描线与所述栅极在同一工艺步骤中形成;或者,所述栅极材料为金属材料时,所述扫描线设置在所述栅极的上方或下方。
- 根据权利要求4所述的显示面板,其中,多个所述扫描线沿第一方向延伸,多个所述数据线沿第二方向延伸,所述第一方向和第二方向相交。
- 根据权利要求11所述的显示面板,其中,相邻的所述扫描线间具有第一间距,所述第一间距连续变化或间断变化;和/或,相邻的数据线间具有第二间距,所述第二间距连续变化或间断变化。
- 根据权利要求11所述的显示面板,其中,所述扫描线的宽度连续变化或间断变化;和/或,所述数据线的宽度连续变化或间断变化。
- 根据权利要求11所述的显示面板,其中,所述扫描线在所述延伸方向上的两条边均为波浪形,所述两条边的波峰相对设置,且波谷相对设置;和/或,所述数据线在所述延伸方向上的两条边均为波浪形,所述两条边的波峰相对设置,且波谷相对设置。
- 根据权利要求14所述的显示面板,其中,所述扫描线的波谷相对处形成有第一连接部;所述第一连接部为条状,所述第一连接部为所述扫描线与所述开关器件电连接区域;和/或,所述数据线的波谷相对处形成有第二连接部;所述第二连接部为条状; 所述第二连接部为所述数据线与所述开关器件电连接区域。
- 一种显示屏,至少包括第一显示区和第二显示区,各显示区均用于显示动态或静态画面,所述第一显示区下方可设置感光器件;其中,在所述第一显示区设置有如权利要求1-15任一项所述的显示面板,所述第二显示区设置的显示面板为无源矩阵有机发光二极管显示面板或有源矩阵有机发光二极管显示面板。
- 根据权利要求16所述的显示屏,其中,第一显示区的分辨率低于所述第二显示区;所述像素限定层在所述第一显示区内限定出所述多个第一开口,在所述第二显示区内限定出多个第二开口,所述第二开口的面积小于所述第一开口的面积;所述第一显示区内形成有数量和位置与所述第一开口对应的第一子像素,所述第二显示区内形成有数量和位置与所述第二开口对应的第二子像素,所述第一子像素的发光结构层和所述第二子像素的发光结构层采用同一掩膜板,在同一工艺步骤中形成。
- 根据权利要求16所述的显示屏,其中,所述第二显示区设置的显示面板为有源矩阵有机发光二极管显示面板时,所述第一显示区的显示面板的阴极和所述第二显示区的显示面板的阴极共用一整面的面电极。
- 一种形成显示面板的方法,包括如下步骤:S1:形成开关器件、扫描线和数据线;所述开关器件分别包括第一端、 第二端和控制端,所述数据线与所述开关器件的所述第一端连接,所述扫描线与所述开关器件的所述控制端连接。S2:在所述开关器件上对应形成第一电极、像素限定层、发光结构层以及第二电极,多个所述发光结构层共用所述第二电极,且多个所述发光结构层的第一电极分别与所述开关器件的第二端连接。
- 根据权利要求19所述的方法,其中,所述开关器件为顶栅薄膜晶体管,并且步骤S1具体包括步骤S111-S117:步骤S111:在基板上形成多个有源层;步骤S112:在所述多个有源层上形成栅极绝缘层;步骤S113:在所述栅极绝缘层上形成所述扫描线,以及与每一个所述有源层对应的栅极,所述栅极与所述扫描线连接;步骤S114:在多个所述栅极上形成层间绝缘层;步骤S115:在所述层间绝缘层上形成与每一个所述有源层对应的源极和漏极;步骤S116:在所述源极和所述漏极上形成平坦化层,所述平坦化层具有分别与所述源极和所述漏极对应的通孔;步骤S117:在所述平坦化层上形成所述数据线,所述数据线通过所述通孔与所述源极连接,或者所述开关器件为底栅薄膜晶体管,并且步骤S1包括步骤S121-S128:步骤S121:在基板上形成所述扫描线;步骤S122:形成与所述扫描线连接的多个栅极;步骤S123:在所述多个栅极上形成栅极绝缘层;步骤S124:在所述栅极绝缘层上形成与每一个栅极对应的有源层;步骤S125:在多个所述有源层上形成层间绝缘层;步骤S126:在所述层间绝缘层上形成与每一个所述有源层对应的源极和漏极;步骤S127:在所述源极和所述漏极上形成平坦化层,所述平坦化层具有分别与所述源极和所述漏极对应的通孔。步骤S128:在所述平坦化层上形成所述数据线,所述数据线通过所述通孔与所述源极连接。
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