WO2019150548A1 - Source de liquide d'impureté semi-conductrice, procédé de fabrication de source de liquide d'impureté semi-conductrice et procédé de fabrication de dispositif à semi-conducteurs - Google Patents

Source de liquide d'impureté semi-conductrice, procédé de fabrication de source de liquide d'impureté semi-conductrice et procédé de fabrication de dispositif à semi-conducteurs Download PDF

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Publication number
WO2019150548A1
WO2019150548A1 PCT/JP2018/003557 JP2018003557W WO2019150548A1 WO 2019150548 A1 WO2019150548 A1 WO 2019150548A1 JP 2018003557 W JP2018003557 W JP 2018003557W WO 2019150548 A1 WO2019150548 A1 WO 2019150548A1
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Prior art keywords
semiconductor
liquid source
impurity liquid
semiconductor impurity
impurity
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PCT/JP2018/003557
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English (en)
Japanese (ja)
Inventor
智也 齋藤
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新電元工業株式会社
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Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to PCT/JP2018/003557 priority Critical patent/WO2019150548A1/fr
Priority to JP2018529327A priority patent/JP6472936B1/ja
Priority to CN201880000866.9A priority patent/CN110366771B/zh
Priority to TW107126909A priority patent/TWI685022B/zh
Publication of WO2019150548A1 publication Critical patent/WO2019150548A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Definitions

  • the present invention relates to a semiconductor impurity liquid source, a method for manufacturing a semiconductor impurity liquid source, and a method for manufacturing a semiconductor device.
  • Japanese Patent Laid-Open No. 11-176664 discloses a diffusion film containing an impurity compound and an organic binder.
  • the organic binder contributes to the uniformity of impurity diffusion.
  • the production efficiency cannot be improved. Therefore, the technique described in JP-A-11-176664 is completely different from the present invention.
  • the present invention provides a semiconductor impurity liquid source and a method for manufacturing a semiconductor impurity liquid source, which can improve the manufacturing efficiency of a semiconductor device by shortening the time required for removing a semiconductor substrate while ensuring uniformity of impurity diffusion And it aims at providing a semiconductor manufacturing method.
  • a semiconductor impurity liquid source according to one embodiment of the present invention is provided.
  • a semiconductor impurity liquid source that diffuses impurities in the plurality of semiconductor substrates by being heated while being applied between the plurality of stacked semiconductor substrates, A compound containing the impurities;
  • a thickener that dissolves in the organic solvent and imparts viscosity to the semiconductor impurity liquid source;
  • the impurities are deposited on the coated surface by depositing between the adjacent inorganic powders as the organic solvent evaporates.
  • the inorganic powder is When laminating the plurality of semiconductor substrates, the spacing between the inorganic powders adjacent to each other in the surface direction is adjusted by the thickener, whereby the distribution in the surface direction of the plurality of semiconductor substrates is distributed.
  • the spacing between the plurality of semiconductor substrates is maintained, so that the stripping solution penetrates between the plurality of semiconductor substrates.
  • the mass concentration of the inorganic powder with respect to the entire semiconductor impurity liquid source may be lower than the mass concentration of the thickener with respect to the entire semiconductor impurity liquid source.
  • a mass concentration of the inorganic powder with respect to the entire semiconductor impurity liquid source may be lower than a mass concentration of the organic solvent with respect to the entire semiconductor impurity liquid source.
  • the stripping solution may be hydrofluoric acid.
  • the inorganic powder may contain at least one substance selected from the group consisting of Si, SiO 2 , SiC, and Si 3 N 4 as a main component.
  • the thickener may contain cellulose or a derivative thereof as a main component.
  • the thickener may contain hydroxypropylcellulose as a main component.
  • the organic solvent may contain ethanol, acetone, or propanol as a main component.
  • the compound may be boric acid and aluminum lactate.
  • the compound may be pyrophosphoric acid.
  • a method for manufacturing a semiconductor impurity liquid source includes: Producing a mixed liquid comprising a compound containing the impurity, an organic solvent that dissolves the compound, and a thickener that dissolves in the organic solvent and imparts viscosity to the semiconductor impurity liquid source; Holding the liquid mixture in a predetermined atmosphere for a predetermined time in order to stabilize the viscosity of the liquid mixture; After the holding, a step of mixing an inorganic powder having a diameter larger than the impurities into the mixed solution.
  • a method for manufacturing a semiconductor device includes: Applying the semiconductor impurity liquid source according to claim 1 to a plurality of semiconductor substrates; Drying the applied semiconductor impurity liquid source by heating the applied semiconductor impurity liquid source to a first temperature; Laminating the plurality of semiconductor substrates; Adjusting the distribution of the spacing between the plurality of semiconductor substrates by the inorganic powder when laminating the plurality of semiconductor substrates; and The impurity is heated to a second temperature to generate a diffusion source of the impurity, and the plurality of semiconductor substrates are immersed in a stripping solution and bonded by heating at the second temperature. Separating the plurality of semiconductor substrates.
  • a semiconductor impurity liquid source is a semiconductor impurity liquid source that diffuses impurities into a plurality of semiconductor substrates by being heated while being applied between a plurality of stacked semiconductor substrates, Contains a compound containing impurities, an organic solvent that dissolves the compound, a thickener that dissolves in the organic solvent and imparts viscosity to the semiconductor impurity liquid source, and an inorganic powder having a diameter larger than the impurities.
  • the thickener adjusts the spacing between adjacent inorganic powders in the surface direction along the application surface by the viscosity applied to the semiconductor impurity liquid source.
  • the impurity distribution on the coated surface is adjusted, and the semiconductor impurity liquid source is heated to the first temperature for drying, so that the organic solvent is evaporated and adjoined. It has the property of precipitating between inorganic powders and maintaining the distribution of impurities on the coated surface.
  • Inorganic powders are adjacent to each other in the plane direction by a thickener when laminating a plurality of semiconductor substrates.
  • the distribution of the distance between the plurality of semiconductor substrates in the plane direction is adjusted, and a second impurity diffusion supply source having a temperature higher than the first temperature is generated.
  • the plurality of semiconductor substrates bonded by heating at the second temperature are exposed to the stripping solution after being heated to the temperature of the second temperature, the spacing between the plurality of semiconductor substrates is maintained. Has the property of allowing the stripping solution to penetrate.
  • the distribution of impurities on the coating surface is adjusted by the viscosity of the thickener, and the semiconductor impurity liquid source is dried at the first temperature.
  • the thickening agent is deposited between adjacent inorganic powders to maintain the distribution of impurities on the coated surface and stacking a plurality of semiconductor substrates
  • the viscosity of the thickening agent causes a gap in the plane direction.
  • the inorganic powder is adjusted to adjust the distribution in the surface direction of the intervals between the semiconductor substrates, and when exposing a plurality of semiconductor substrates to the release liquid, the separation is performed through the intervals between the semiconductor substrates maintained with the inorganic powder.
  • the liquid can be infiltrated.
  • FIG. 6 is a schematic cross-sectional view showing a coating step subsequent to FIG.
  • FIG. 7 is a schematic cross-sectional view showing a drying step subsequent to FIG. 6 in the method for manufacturing the semiconductor device according to the present embodiment.
  • FIG. 8 is a schematic cross-sectional view showing a stacking step following FIG. 7 in the method for manufacturing the semiconductor device according to the embodiment.
  • FIG. 9 is a schematic cross-sectional view showing a firing step following FIG. 8 in the method for manufacturing the semiconductor device according to the present embodiment.
  • 5 is a graph showing temperature transition in a diffusion process in the method for manufacturing a semiconductor device according to the embodiment.
  • FIG. 10 is a schematic cross-sectional view showing a deposition step following FIG. 9 in the method for manufacturing the semiconductor device according to the embodiment.
  • FIG. 12 is a schematic cross-sectional view showing a diffusion step following FIG. 11 in the method for manufacturing the semiconductor device according to the present embodiment.
  • FIG. 13 is a schematic cross-sectional view showing an immersion step subsequent to FIG. 12 in the method for manufacturing the semiconductor device according to the present embodiment. It is a flowchart which shows the manufacturing method of the semiconductor impurity liquid source which concerns on the modification of this embodiment.
  • semiconductor impurity liquid source First, the semiconductor impurity liquid source according to the present embodiment will be described.
  • the semiconductor impurity liquid source according to the present embodiment diffuses impurities in a plurality of semiconductor substrates by being heated while being applied between the plurality of stacked semiconductor substrates. In this manner, by diffusing impurities into a plurality of stacked semiconductor substrates, the impurities can be simultaneously diffused into the plurality of semiconductor substrates, so that the impurities can be efficiently diffused.
  • the semiconductor impurity liquid source includes an impurity-containing compound, an organic solvent that dissolves the compound, a thickener that dissolves in the organic solvent and imparts viscosity to the semiconductor impurity liquid source, and an inorganic powder having a diameter larger than that of the impurity. , Are mixed and contained.
  • the semiconductor impurity liquid source may further contain water.
  • boric acid, aluminum lactate or the like can be suitably used as the compound containing the impurity.
  • N-type semiconductor impurity liquid source in which an N-type impurity is diffused into a semiconductor substrate
  • pyrophosphoric acid or the like can be suitably used as the compound containing the impurity.
  • Organic solvent has the property of dissolving compounds containing impurities.
  • an organic solvent containing ethanol, acetone, propanol or the like as a main component can be preferably used.
  • Thickener dissolves in an organic solvent and has the property of imparting viscosity to the semiconductor impurity liquid source.
  • the thickener adjusts the spacing between adjacent inorganic powders in the surface direction along the coating surface by the viscosity applied to the semiconductor impurity liquid source when the semiconductor impurity liquid source is applied to the coating surface of the semiconductor substrate. And has a characteristic of adjusting the distribution of impurities on the coated surface.
  • the thickener is heated to the first temperature for drying the semiconductor impurity liquid source, so that the organic solvent precipitates between the adjacent inorganic powders as the organic solvent evaporates, and impurities are deposited on the coated surface. It has the characteristic of maintaining the distribution.
  • the thickener having such characteristics, for example, a thickener containing cellulose or a derivative thereof as a main component can be suitably used. More preferably, the thickener contains hydroxypropyl cellulose.
  • the inorganic powder adjusts the distribution of the spacing between the plurality of semiconductor substrates in the plane direction by adjusting the spacing between adjacent inorganic powders in the plane direction by the thickener. It has the characteristic to do.
  • the inorganic powder is a plurality of semiconductors bonded by heating at a second temperature after the impurity is heated to a second temperature at which an impurity diffusion source that is higher than the first temperature is generated.
  • the spacing between the plurality of semiconductor substrates is maintained, so that the stripping solution penetrates between the plurality of semiconductor substrates.
  • an inorganic powder containing at least one substance selected from the group consisting of Si, SiO 2 , SiC and Si 3 N 4 as a main component is preferably used. it can.
  • hydrofluoric acid or the like can be suitably used as a stripping solution having a property of stripping semiconductor substrates bonded via inorganic powder.
  • FIG. 1 is a flowchart showing a method for manufacturing a semiconductor impurity liquid source according to the present embodiment.
  • a mixed liquid is produced in which a compound containing impurities, an organic solvent that dissolves the compound, and a thickener that dissolves in the organic solvent and imparts viscosity to the semiconductor impurity liquid source are generated. (Step S1).
  • FIG. 2 is an explanatory diagram for explaining a method for producing a P-type semiconductor impurity liquid source in the method for producing a semiconductor impurity liquid source according to the present embodiment.
  • a mixed liquid of a P-type semiconductor impurity liquid source for example, powdered aluminum lactate is mixed with water and then bathed until the aluminum lactate is dissolved in water, thereby producing an aluminum lactate liquid. Is generated.
  • the melting time of the aluminum lactate can be shortened by performing the water bath while stirring.
  • Aluminum lactate is more soluble in water than organic solvents. By mixing aluminum lactate in easily soluble water and then mixing with an organic solvent, a mixed solution can be generated appropriately.
  • boric acid powder is mixed with ethanol and boiled until the boric acid is dissolved in ethanol to produce a boric acid solution.
  • the dissolution time of boric acid can be shortened by boiling water with stirring.
  • a liquid mixture is produced
  • FIG. 3 is an explanatory diagram for explaining a method for producing an N-type semiconductor impurity liquid source in the method for producing a semiconductor impurity liquid source according to the present embodiment.
  • a mixed liquid of N-type semiconductor impurity liquid source when a mixed liquid of N-type semiconductor impurity liquid source is generated, for example, a mixed liquid is generated by mixing pyrophosphoric acid, an organic solvent, and a thickener.
  • the mixed solution After generating the mixed solution, as shown in FIG. 1, the mixed solution is held in a predetermined atmosphere for a predetermined time in order to stabilize the viscosity of the mixed solution (step S2).
  • step S3 After holding the mixed solution, an inorganic powder having a diameter larger than the impurities is mixed into the mixed solution (step S3). As described above, a semiconductor impurity liquid source can be obtained.
  • FIG. 4 is a flowchart showing a method for manufacturing a semiconductor device according to the present embodiment.
  • FIG. 5 is a schematic cross-sectional view showing a dropping step in the method for manufacturing a semiconductor device according to the present embodiment.
  • a semiconductor impurity liquid source is dropped on a semiconductor substrate (step S11).
  • the semiconductor substrate 2 is placed on the coating coater head 3, and the P-type is placed on the coating surface 2 a of the semiconductor substrate 2 by the nozzle 4 from above with respect to the placed semiconductor substrate 2.
  • the semiconductor impurity liquid source 1-P is dropped.
  • the P-type semiconductor impurity liquid source 1-P contains a mixture of a P-type impurity 11-P, an organic solvent 12, a thickener 13, and an inorganic powder 14.
  • the P-type semiconductor impurity liquid source 1-P may further contain water or ethanol.
  • the semiconductor substrate 2 is, for example, a silicon single crystal substrate.
  • the semiconductor substrate 2 may be diffused with impurities.
  • FIG. 6 is a schematic cross-sectional view showing the coating process subsequent to FIG. 5 in the method for manufacturing the semiconductor device according to the present embodiment.
  • the semiconductor impurity liquid source for example, as shown in FIG. 6, by rotating the coating coater head 3 in the rotation direction r, the semiconductor substrate 2 placed on the coating coater head 3 and the semiconductor The P-type semiconductor impurity liquid source 1-P on the coating surface 2a of the substrate 2 is rotated.
  • the P-type semiconductor impurity liquid source 1-P flows from the center side to the peripheral side of the application surface 2a, and the application surface 2a. It is applied to the whole.
  • the moving speed of the inorganic powder 14 toward the peripheral side of the semiconductor substrate 2 can be adjusted by the viscosity imparted to the P-type semiconductor impurity liquid source 1-P by the thickener 13.
  • interval i of the inorganic powder 14 adjacent in the surface direction d along the application surface 2a can be adjusted.
  • the distribution of the P-type impurities 11-P on the coated surface 2a can be adjusted.
  • the distribution of the P-type impurities 11-P on the coating surface 2a can be adjusted uniformly.
  • FIG. 7 is a schematic cross-sectional view showing a drying step subsequent to FIG. 6 in the method for manufacturing the semiconductor device according to the present embodiment.
  • the semiconductor impurity liquid source is dried, for example, as shown in FIG. 7, the semiconductor substrate 2 coated with the P-type semiconductor impurity liquid source 1-P is placed on the baking plate 5 in which the heating element is built. Then, the baking plate 5 is heated to the drying temperature (first temperature). As a result, the organic solvent and water are generally evaporated.
  • the thickener 13 is precipitated (ie, solidified) and remains. By depositing the thickener 13, the interval i between the adjacent inorganic powders 14 can be stably maintained by the thickener 13. Thereby, the distribution of the P-type impurity 11-P on the coated surface 2a can be maintained.
  • step S11 to S13 are performed using the surface opposite to the coating surface 2a of the semiconductor substrate 2 as a new coating surface, and the semiconductor impurity liquid source having a different impurity conductivity type. To do.
  • FIG. 8 is a schematic cross-sectional view showing the stacking process continued from FIG. 7 in the method for manufacturing the semiconductor device according to the present embodiment.
  • a plurality of semiconductor substrates 2 are laminated so that the application surfaces of semiconductor impurity liquid sources of the same conductivity type face each other.
  • reference numeral 11-N is an N-type impurity.
  • the interval between the adjacent inorganic powders 14 is not adjusted, the distribution of the inorganic powders 14 is biased, and a portion where the inorganic powders 14 are not locally present between the semiconductor substrates 2 may be generated.
  • the distance between the semiconductor substrates 2 is narrowed by the gravity of the stacked semiconductor substrates 2.
  • the distance between the semiconductor substrates 2 becomes non-uniform in the plane direction, and the arrangement state of impurities between the semiconductor substrates 2 also becomes non-uniform in the plane direction. As a result, it becomes difficult to maintain the uniformity of impurity diffusion.
  • the inorganic powder 14 is the surface of the space
  • the distribution in the direction can be adjusted.
  • the inorganic powder 14 can be adjusted so that the distribution in the surface direction d of the interval between the semiconductor substrates 2 is uniform.
  • the uniformity in the surface direction of the interval between the semiconductor substrates 2 can be enhanced, the uniformity in the surface direction of the arrangement state of impurities between the semiconductor substrates 2 can be enhanced. As a result, the uniformity of impurity diffusion can be improved.
  • FIG. 9 is a schematic cross-sectional view showing a baking step subsequent to FIG. 8 in the method for manufacturing the semiconductor device according to the present embodiment.
  • FIG. 10 is a graph showing a temperature transition in the diffusion process in the method for manufacturing a semiconductor device according to the present embodiment.
  • the firing step for example, as shown in FIG. 9, the laminated semiconductor substrate 2 is heated at the firing temperature to remove the thickener 13. More specifically, as shown in FIG. 10, the laminated semiconductor substrate 2 is heated at a constant baking temperature Ta for a predetermined time t1 to remove the thickener 13.
  • the P-type impurities 11-P are formed on the surface of the semiconductor substrate 2. It can be arranged as uniformly as possible.
  • a deposition process is performed in which impurities are vitrified to generate a diffusion supply source (step S16).
  • FIG. 11 is a schematic cross-sectional view showing a deposition process subsequent to FIG. 9 in the method for manufacturing a semiconductor device according to the present embodiment.
  • the deposition step for example, as shown in FIG. 11, by heating the P-type impurity 11-P to the deposition temperature (second temperature), the P-type impurity 11-P is vitrified to form a diffusion supply source.
  • the P-type impurity 11-P is heated at a constant deposition temperature Tb higher than the firing temperature Ta for a time t2 longer than the firing time t1, so that the P-type impurity 11-P is heated.
  • 11-P is the diffusion source.
  • the P-type impurity 11-P is diffused to a shallow position.
  • the P-type impurities 11 are formed on the surface of the semiconductor substrate 2.
  • -P can be arranged as uniformly as possible.
  • the P-type impurity 11-P can be diffused as uniformly as possible.
  • N-type impurity 11-N the same applies to the N-type impurity 11-N.
  • the upper and lower semiconductor substrates 2 are joined in a block state.
  • FIG. 12 is a schematic cross-sectional view showing the diffusion step following FIG. 11 in the method for manufacturing the semiconductor device according to the present embodiment.
  • the P-type impurity 11-P is diffused to a desired depth by heating the P-type impurity 11-P to the diffusion temperature. More specifically, as shown in FIG. 10, the P-type impurity 11-P is heated at a constant diffusion temperature Tc higher than the deposition temperature Tb for a time t3 longer than the deposition time t2, thereby obtaining a P-type impurity.
  • Impurities 11-P are diffused to a desired depth.
  • N-type impurity 11-N is similarly diffused.
  • FIG. 13 is a schematic cross-sectional view showing the dipping process continued from FIG. 12 in the method for manufacturing the semiconductor device according to the present embodiment.
  • the spacing between the semiconductor substrates 2 is maintained by the inorganic powder 14, so the stripping solution 6 can be easily moved from the location of the outermost inorganic powder 14 toward the center side. Can penetrate.
  • the semiconductor substrate 2 is washed and dried, and stripped from the laminated state (step S19).
  • the semiconductor impurity liquid source includes a compound containing impurities, an organic solvent that dissolves the compound, a thickener that dissolves in the organic solvent and imparts viscosity to the semiconductor impurity liquid source, An inorganic powder having a diameter larger than the impurities is mixed and contained.
  • the thickener adjusts the interval between the adjacent inorganic powders in the surface direction along the application surface by the viscosity applied to the semiconductor impurity liquid source.
  • the coated surface is deposited between adjacent inorganic powders as the organic solvent evaporates.
  • the inorganic powder adjusts the distribution of the spacing between the plurality of semiconductor substrates in the plane direction by adjusting the spacing between adjacent inorganic powders in the plane direction by the thickener. Then, after heating the impurity to a second temperature at which an impurity diffusion supply source that is higher than the first temperature is generated, a plurality of semiconductor substrates bonded by heating at the second temperature are removed from the stripping solution. When exposed to, the spacing between the plurality of semiconductor substrates is maintained, so that the stripping solution penetrates between the plurality of semiconductor substrates.
  • the distribution of impurities on the coating surface is adjusted by the viscosity of the thickener, and the semiconductor impurity liquid source is dried at the first temperature.
  • the thickening agent is deposited between adjacent inorganic powders to maintain the distribution of impurities on the coated surface and stacking a plurality of semiconductor substrates
  • the viscosity of the thickening agent causes a gap in the plane direction.
  • the inorganic powder is adjusted to adjust the distribution in the surface direction of the intervals between the semiconductor substrates, and when exposing a plurality of semiconductor substrates to the release liquid, the separation is performed through the intervals between the semiconductor substrates maintained with the inorganic powder.
  • the liquid can be infiltrated.
  • the dopant film it is necessary to pre-bake the dopant film at a constant temperature so that abnormal combustion does not occur due to abrupt generation of gas due to a large amount of organic binder, but abnormal combustion occurs in the semiconductor impurity liquid source. Since no organic solvent is used, pre-baking before firing is unnecessary. Thereby, the number of processes can be suppressed and the production efficiency can be further improved.
  • FIG. 14 is a flowchart showing a method for manufacturing a semiconductor impurity liquid source according to a modification of the present embodiment.
  • stirring may be performed before holding the mixed liquid (step S4).
  • the viscosity of the thickener can be further stabilized by stirring the mixed solution. By stabilizing the viscosity of the thickener, the uniformity of impurity diffusion can be more effectively ensured during the manufacture of the semiconductor device.
  • the mass concentration (wt%) of the inorganic powder with respect to the entire semiconductor impurity liquid source may be lower than the mass concentration (wt%) of the thickener with respect to the entire semiconductor impurity liquid source.
  • the mass concentration of the inorganic powder is higher than the mass concentration of the thickener, the thickener cannot exert its viscosity properly and the semiconductor impurity liquid source becomes difficult to extend. Even if the material of the agent is selected, it is difficult to accurately adjust the viscosity of the thickener.
  • the mass concentration of the inorganic powder is lower than the mass concentration of the thickener, the viscosity of the thickener can be appropriately exhibited. By doing so, the viscosity of the thickener can be accurately adjusted.
  • the mass concentration of the inorganic powder with respect to the entire semiconductor impurity liquid source may be lower than the mass concentration of the organic solvent with respect to the entire semiconductor impurity liquid source.
  • the mass concentration of the inorganic powder is higher than the mass concentration of the organic solvent, the fluidity of the semiconductor impurity liquid source is remarkably impaired, so that even if a thickener that imparts viscosity to the fluid is added , Since there are too few fluids (organic solvents) which should give viscosity, a thickener cannot exhibit viscosity appropriately. For this reason, even if the material of the thickener is selected to obtain a desired viscosity, it is difficult to accurately adjust the viscosity of the thickener.
  • the mass concentration of the inorganic powder is lower than the mass concentration of the organic solvent, a sufficient organic solvent that imparts viscosity can be secured, so that the thickener can appropriately exhibit the viscosity. For this reason, the viscosity of the thickener can be accurately adjusted by selecting the material of the thickener to obtain a desired viscosity.

Abstract

La présente invention concerne une source de liquide d'impureté semi-conductrice qui comprend : un composé qui contient une impureté ; un solvant organique qui dissout le composé ; un agent épaississant qui est dissout dans le solvant organique et qui confère une viscosité à la source de liquide ; une poudre inorganique ayant un diamètre plus grand que l'impureté. L'agent épaississant ajuste la distribution de l'impureté sur une surface d'application d'un substrat semi-conducteur par ajustement de l'intervalle entre des particules de poudre inorganique adjacentes à l'aide de la viscosité lorsque la source de liquide est appliquée à la surface d'application, et maintient la distribution de l'impureté par précipitation entre des particules de poudre inorganique adjacentes en conséquence de son chauffage à une première température. La poudre inorganique ajuste la distribution des intervalles entre les substrats semi-conducteurs et, lorsque les substrats semi-conducteurs assemblés sont exposés à un liquide de délaminage après chauffage de l'impureté à une seconde température, le liquide de délaminage imprègne l'intervalle entre les substrats semi-conducteurs grâce au maintien de l'intervalle entre les substrats semi-conducteurs.
PCT/JP2018/003557 2018-02-02 2018-02-02 Source de liquide d'impureté semi-conductrice, procédé de fabrication de source de liquide d'impureté semi-conductrice et procédé de fabrication de dispositif à semi-conducteurs WO2019150548A1 (fr)

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PCT/JP2018/003557 WO2019150548A1 (fr) 2018-02-02 2018-02-02 Source de liquide d'impureté semi-conductrice, procédé de fabrication de source de liquide d'impureté semi-conductrice et procédé de fabrication de dispositif à semi-conducteurs
JP2018529327A JP6472936B1 (ja) 2018-02-02 2018-02-02 半導体不純物液体ソース、半導体不純物液体ソースの製造方法および半導体装置の製造方法
CN201880000866.9A CN110366771B (zh) 2018-02-02 2018-02-02 半导体掺杂物液体源、半导体掺杂物液体源的制造方法以及半导体装置的制造方法
TW107126909A TWI685022B (zh) 2018-02-02 2018-08-02 半導體摻雜物液體源、半導體摻雜物液體源的製造方法以及半導體裝置的製造方法

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