KR100966832B1 - 반도체 웨이퍼 지지장치의 제조방법 - Google Patents
반도체 웨이퍼 지지장치의 제조방법 Download PDFInfo
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- KR100966832B1 KR100966832B1 KR1020080033436A KR20080033436A KR100966832B1 KR 100966832 B1 KR100966832 B1 KR 100966832B1 KR 1020080033436 A KR1020080033436 A KR 1020080033436A KR 20080033436 A KR20080033436 A KR 20080033436A KR 100966832 B1 KR100966832 B1 KR 100966832B1
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- KR
- South Korea
- Prior art keywords
- pcs
- semiconductor wafer
- graphite base
- manufacturing
- coating
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (7)
- 삭제
- 삭제
- a) 흑연 재질의 흑연 베이스를 형성하는 단계;b) PCS(Polycarbosilane)와 헥산이 혼합된 PCS 코팅액을 준비하는 단계;c) 상기 흑연 베이스를 상기 PCS 코팅액에 침지 시키는 단계;d) 상기 PCS 코팅액을 건조시켜 PCS 코팅층을 형성하는 단계; 및e) 상기 PCS 코팅층을 열처리하여 비정질 SiC로 전환시키는 단계를 포함하는 반도체 웨이퍼 지지장치 제조방법.
- 제3항에 있어서,상기 a) 단계의 흑연 베이스는 표면에 홈 또는 요철부가 마련된 것을 특징으로 하는 반도체 웨이퍼 지지장치 제조방법.
- 제3항 또는 제4항에 있어서,상기 b) 단계의 PCS 코팅액은 PCS 5 내지 60wt%와 헥산 40 내지 95wt%가 혼합된 것을 특징으로 하는 반도체 웨이퍼 지지장치 제조방법.
- 제5항에 있어서,상기 d) 단계는 PCS 코팅액을 온도조건이 상온이며, 불활성기체 또는 진공분위기에서 24시간 건조시키는 것을 특징으로 하는 반도체 웨이퍼 지지장치 제조방법.
- 제5항에 있어서,상기 e) 단계의 열처리는 최종가열온도가 700 내지 1000℃가 되도록, 상온부터 시간당 5 내지 30℃의 승온속도로 열처리하는 것을 특징으로 하는 반도체 웨 이퍼 지지장치 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080033436A KR100966832B1 (ko) | 2008-04-11 | 2008-04-11 | 반도체 웨이퍼 지지장치의 제조방법 |
Applications Claiming Priority (1)
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KR1020080033436A KR100966832B1 (ko) | 2008-04-11 | 2008-04-11 | 반도체 웨이퍼 지지장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090108151A KR20090108151A (ko) | 2009-10-15 |
KR100966832B1 true KR100966832B1 (ko) | 2010-06-29 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020080033436A KR100966832B1 (ko) | 2008-04-11 | 2008-04-11 | 반도체 웨이퍼 지지장치의 제조방법 |
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KR (1) | KR100966832B1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101150857B1 (ko) * | 2010-10-22 | 2012-06-13 | 주식회사 티씨케이 | 세라믹 코팅층의 리페어방법 |
KR101274079B1 (ko) * | 2011-09-28 | 2013-06-12 | 주식회사 티씨케이 | 엘이디 성장 설비의 천정판 제조방법 |
KR102360676B1 (ko) * | 2020-02-04 | 2022-02-11 | 주식회사 케이엔제이 | 탄화규소층을 포함하는 부품의 제조 방법 |
JP2022140088A (ja) * | 2021-03-12 | 2022-09-26 | キオクシア株式会社 | テンプレートおよびその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6484721A (en) * | 1987-09-28 | 1989-03-30 | Sony Corp | Apparatus for etching silicon |
JPH09246238A (ja) * | 1996-03-01 | 1997-09-19 | Nippon Eng Kk | プラズマエッチング用平板状基台およびその製造方法 |
JPH11162877A (ja) | 1997-12-02 | 1999-06-18 | Seiko Epson Corp | 半導体製造装置 |
JPH11260794A (ja) | 1998-03-13 | 1999-09-24 | Hitachi Ltd | 半導体プロセス装置 |
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2008
- 2008-04-11 KR KR1020080033436A patent/KR100966832B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6484721A (en) * | 1987-09-28 | 1989-03-30 | Sony Corp | Apparatus for etching silicon |
JPH09246238A (ja) * | 1996-03-01 | 1997-09-19 | Nippon Eng Kk | プラズマエッチング用平板状基台およびその製造方法 |
JPH11162877A (ja) | 1997-12-02 | 1999-06-18 | Seiko Epson Corp | 半導体製造装置 |
JPH11260794A (ja) | 1998-03-13 | 1999-09-24 | Hitachi Ltd | 半導体プロセス装置 |
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KR20090108151A (ko) | 2009-10-15 |
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