WO2019131144A1 - 光照射装置 - Google Patents

光照射装置 Download PDF

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Publication number
WO2019131144A1
WO2019131144A1 PCT/JP2018/045734 JP2018045734W WO2019131144A1 WO 2019131144 A1 WO2019131144 A1 WO 2019131144A1 JP 2018045734 W JP2018045734 W JP 2018045734W WO 2019131144 A1 WO2019131144 A1 WO 2019131144A1
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WO
WIPO (PCT)
Prior art keywords
light
substrate
vacuum ultraviolet
irradiation
light irradiation
Prior art date
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PCT/JP2018/045734
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English (en)
French (fr)
Japanese (ja)
Inventor
岩田　和也
秀明 柏木
勝 友野
古閑　法久
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2019562960A priority Critical patent/JP6920469B2/ja
Priority to CN201880081427.5A priority patent/CN111492314A/zh
Priority to KR1020207020141A priority patent/KR102667236B1/ko
Publication of WO2019131144A1 publication Critical patent/WO2019131144A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/68—Lamps in which the main discharge is between parts of a current-carrying guide, e.g. halo lamp

Definitions

  • the present disclosure relates to a light irradiation apparatus that irradiates light to a substrate.
  • Patent Document 1 in a semiconductor device manufacturing process, a process of forming a resist film on the surface of a substrate, a process of exposing, a process of patterning a resist, and a process of irradiating light at a wavelength of 200 nm or less on the front surface of the resist And sequentially performing the step of etching the lower layer film of the resist film.
  • the step of irradiating light having a wavelength of 200 nm or less (hereinafter, simply referred to as a step of irradiating light) is performed, for example, for the purpose of improving the roughness (concave and convex) of the resist film.
  • a plurality of lamps are disposed on the substrate from the viewpoint of securing the irradiation intensity while shortening the irradiation distance.
  • each lamp is a point light source
  • the irradiation range on the wafer is circular. In the case where the irradiation range is circular, if the lamps are arranged such that the irradiation ranges of the lamps do not overlap, portions where light is not irradiated (or the irradiation intensity becomes weak) may occur.
  • the present disclosure describes a light irradiation device capable of improving the uniformity of the light irradiation distribution on the irradiation surface of the substrate.
  • a light irradiation apparatus includes: a plurality of light irradiation units that irradiate vacuum vacuum ultraviolet light having a conical light path with a light source at the top toward a substrate; and a vacuum irradiated from a plurality of light irradiation units. And a light shielding portion provided corresponding to each light irradiation portion so as to shield an overlapping portion of the irradiation range of the ultraviolet light, wherein the light shielding portion is formed in a polygonal shape as viewed from the traveling direction of the vacuum ultraviolet light. ing.
  • the overlapping portion of the plurality of vacuum ultraviolet light irradiated toward the substrate along the conical light path is shielded by the polygonal light shielding portion provided corresponding to each light irradiation portion. It is done.
  • the irradiation range is circular. There will be a portion where the light is not irradiated (or a portion where the irradiation intensity becomes weak).
  • the light shielding portion that shields the overlapping portion of the plurality of vacuum ultraviolet light is formed in a polygonal shape as viewed from the traveling direction of the vacuum ultraviolet light.
  • substrate becomes polygonal shape.
  • substrate can be improved.
  • the light shielding portion may have a cylindrical light shielding member which is formed in a cylindrical shape by extending in the traveling direction of the vacuum ultraviolet light.
  • the light shielding portion provided corresponding to the light irradiation portion extends in the height direction (the advancing direction of the vacuum ultraviolet light) and is formed in a cylindrical shape, whereby light irradiation of light other than the light irradiation portion to which the light shielding portion corresponds.
  • the influence of vacuum ultraviolet light from one part for example, the next light irradiation part
  • overlapping of the irradiation range with the vacuum ultraviolet light of the other light irradiation parts can be appropriately prevented, and the uniformity of the light irradiation distribution on the irradiation surface of the substrate can be further improved.
  • the light shielding portion especially the cylindrical light shielding portion
  • the shadow of the light shielding portion may be projected onto the irradiation surface of the substrate, and the uniformity of the light irradiation distribution on the irradiation surface of the substrate may be degraded by the shadow.
  • the separation distance adjusting part for example, it is possible to adjust the spread of the irradiation light from the adjacent light shielding parts to the substrate. Can be eliminated by overlapping each other.
  • the light irradiation unit may be configured to include a deuterium lamp.
  • a deuterium lamp in addition to vacuum ultraviolet light having a wavelength of 200 nm or less, near ultraviolet light having a wavelength of greater than 200 nm can be irradiated to the substrate.
  • the wavelength range of the spectrum of light irradiated from the deuterium lamp is relatively wide, for example, in the case where a resist pattern is formed on the surface of the substrate, the resist pattern has the energy of light of various wavelengths. It will be received. As a result, various reactions occur on the surface of the resist pattern to increase the fluidity, and as a result, the effect of improving the surface roughness can be improved.
  • the deuterium lamp may generate vacuum ultraviolet light having a wavelength of 200 nm or less, for example, a wavelength of 160 nm or less.
  • 160 nm or less is the peak wavelength of the continuous spectrum, and by generating vacuum ultraviolet light of 160 nm or less, for example, when a resist pattern is formed on the surface of the substrate, the surface is roughened.
  • the improvement effect of can be further improved.
  • the irradiation distribution can be positively adjusted by making the illuminance value, the light beam angle, or the height of the light irradiation unit (distance from the substrate) different from each other for the plurality of light irradiation units, Depending on the irradiation condition, the uniformity of the light irradiation distribution on the irradiation surface of the substrate can be further improved.
  • Irradiation light originates in the internal electrode structure of a light source (lamp), and the variation in intensity exists.
  • the diffusion part above the light shielding part the variation of the irradiation light is averaged, and the uniformity of the light irradiation distribution on the irradiation surface of the substrate can be further improved.
  • the substrate may further include a substrate rotation unit configured to rotate the substrate in a state in which the irradiation surface of the substrate is opposed to the light irradiation unit. As a result, the irradiation place is changed, so that the uniformity of the light irradiation distribution on the irradiation surface can be further improved.
  • a substrate rotation unit configured to rotate the substrate in a state in which the irradiation surface of the substrate is opposed to the light irradiation unit.
  • the light shielding portion may be made of a material having a reflectance of 90% or less of vacuum ultraviolet light.
  • the cylindrical light shielding member may extend in the traveling direction over substantially the entire area between the light emitting unit and the substrate. Thereby, it can suppress more appropriately that the vacuum ultraviolet light of another light irradiation part and an irradiation range overlap.
  • the cylindrical light shielding member may be provided at a position close to the substrate between the light emitting unit and the substrate.
  • vacuum ultraviolet light it is necessary to evacuate the processing chamber to a low oxygen state by a vacuum pump.
  • the cylindrical light shielding member is provided substantially in the entire area between the light irradiation unit and the substrate, it is difficult for the vacuum pump to evacuate the inside of the processing chamber, and the above-described vacuuming may not be performed smoothly.
  • by providing the cylindrical light shielding member (only) in the region closer to the substrate it is easier to perform the above-described vacuuming as compared to the case where the cylindrical light shielding member is provided substantially in the entire area between the light irradiation portion and the substrate. can do.
  • the cylindrical light shielding member may have a length equal to or less than half of the total length between the light emitting unit and the substrate. This can facilitate vacuum drawing in the processing chamber.
  • the light blocking portion may have a plate-like light blocking member formed in a plate shape.
  • the plate-like thin member as the light shielding member, it is possible to appropriately evacuate the processing chamber without inhibiting the exhaust by the vacuum pump in the processing chamber.
  • the light shielding portion is formed in a cylindrical shape extending in the traveling direction of vacuum ultraviolet light and formed in a cylindrical light shielding member provided at a position near the substrate between the light irradiation portion and the substrate, and a plate-shaped light shielding formed in a plate shape
  • the plate-shaped light shielding member may be provided below the cylindrical light shielding member.
  • the cylindrical light shielding member is provided below the cylindrical light shielding member while appropriately suppressing the overlapping of the irradiation ranges of the vacuum ultraviolet light.
  • the irradiation range of vacuum ultraviolet light can be appropriately limited by the plate-like light shielding member.
  • the length of the cylindrical light shielding member can be shortened, and the exhaust by the vacuum pump can be appropriately performed to evacuate the processing chamber appropriately.
  • the plate-shaped light shielding member may be provided in contact with the lower end of the cylindrical light shielding member. Thereby, it can suppress that a vacuum ultraviolet light leaks out between a cylindrical light shielding member and a plate-shaped light shielding member, and it can suppress appropriately that the irradiation range of vacuum ultraviolet light overlaps.
  • the size of the region through which light passes may be smaller than that of the cylindrical light blocking member when viewed from the traveling direction.
  • the irradiation range of vacuum ultraviolet light can be appropriately limited by a plate-shaped light shielding member.
  • the plate-shaped light shielding member may be provided to be separated from the lower end of the cylindrical light shielding member. Thereby, the vacuuming by a vacuum pump can be performed more appropriately.
  • the uniformity of the light irradiation distribution on the irradiation surface of the substrate can be improved.
  • FIG. 1 is a schematic view (longitudinal sectional side view) showing a substrate processing apparatus of the present embodiment.
  • a substrate processing apparatus 1 shown in FIG. 1 is an apparatus for performing predetermined processing on a wafer W (substrate).
  • the wafer W has a disk shape, but may be a wafer in which a part of a circle is cut away or a non-circular shape such as a polygon.
  • the wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates.
  • the substrate processing apparatus 1 is described as an apparatus for improving the surface roughness of the resist pattern formed on the surface of the wafer W by irradiating the wafer W with light.
  • the resist pattern is formed by exposing and developing a resist film formed on the wafer W.
  • the substrate processing apparatus 1 includes a processing container 21, a mounting table 20, a housing 43, and a light irradiation device 4.
  • a processing container 21 As shown in FIG. 1, the substrate processing apparatus 1 includes a processing container 21, a mounting table 20, a housing 43, and a light irradiation device 4.
  • FIG. 1 only a part of the configuration included in the light irradiation device 4 is shown.
  • the processing container 21 is, for example, a vacuum container provided in the atmosphere, and is a container for storing the wafer W transferred by the transfer mechanism (not shown). In the substrate processing apparatus 1, processing on the wafer W is performed in a state where the wafer W is stored in the processing container 21.
  • a transfer port 22 is formed on the side wall of the processing container 21. The transfer port 22 is an opening for carrying the wafer W into and out of the processing container 21. The transfer port 22 is opened and closed by a gate valve 23.
  • the mounting table 20 is a circular table provided in the processing container 21.
  • the mounting table 20 horizontally mounts the wafer W such that the center of the wafer W overlaps the center thereof.
  • three elevating pins (not shown) are provided so as to penetrate the mounting table 20 in the thickness direction (vertical direction).
  • the lower end of the elevation pin is connected to an elevation mechanism (not shown), and can be moved (elevation) vertically by the elevation mechanism.
  • the lift pins reach their upper ends above the top surface of the mounting table 20 in a state of being lifted by the lift mechanism, and enter the processing container 21 via the transfer port 22 with the wafer (not shown). Deliver W.
  • the housing 43 is provided on the top of the processing container 21.
  • the housing 43 accommodates a plurality of deuterium lamps 40 (light emitting units) of the light emitting device 4.
  • the light irradiation device 4 is a configuration related to the irradiation of light to the surface of the wafer W for the purpose of improving the roughness (unevenness) of the surface of the resist pattern.
  • the light irradiation device 4 will be described in detail with reference to FIGS. 2 and 3 as well.
  • FIG. 2 is a schematic view showing the light irradiation device 4 of the substrate processing apparatus 1 of FIG.
  • FIG. 3 is an explanatory view showing the irradiation range of the light irradiation device 4 (a plan view of the irradiation range).
  • the light irradiation device 4 includes a plurality of deuterium lamps 40 (light irradiation units) and a plurality of polygonal cylinders 50 (cylindrical light shielding members).
  • the deuterium lamp 40 irradiates the wafer W with vacuum ultraviolet light having a wavelength of 200 nm or less. More specifically, the deuterium lamp 40 emits, for example, light having a wavelength of 115 nm to 400 nm, that is, light having a continuous spectrum of 115 nm to 400 nm. As described above, the light irradiated from the deuterium lamp 40 includes vacuum ultraviolet light (Vacuum Ultra Violet Light: VUV light), that is, light having a wavelength of 10 nm to 200 nm. In addition to vacuum ultraviolet light (vacuum ultraviolet light), light irradiated from the deuterium lamp 40 also includes near ultraviolet light (near ultraviolet light) whose wavelength is greater than 200 nm. The wavelength of the peak of the continuous spectrum of the light emitted from the deuterium lamp 40 of the present embodiment is, for example, 160 nm or less and 150 nm or more.
  • the resist pattern on the surface of the wafer W receives various energy of light, and as a result, on the surface of the resist pattern Various reactions occur. Specifically, since chemical bonds at various positions in molecules constituting the resist film are broken to form various compounds, the orientation of the molecules present in the resist film before light irradiation is eliminated. The surface free energy of the resist film is reduced, and the internal stress is reduced. That is, by using the deuterium lamp 40 as the light source, the fluidity of the surface of the resist pattern can be enhanced, and as a result, the effect of improving the surface roughness of the wafer W can be improved.
  • the light irradiated to the resist film is likely to reach the deep layer of the resist film as the wavelength is larger.
  • the wavelength of the peak of the spectrum of the light emitted from the deuterium lamp 40 is included in the vacuum ultraviolet light band (10 nm to 200 nm) as described above, the light irradiated from the deuterium lamp 40 , The intensity of light having a relatively large wavelength is small. For this reason, there are few things which reach the deep layer of a resist film by the light irradiated from the deuterium lamp 40, and in the deep layer of a resist film, the cutting
  • the deuterium lamp 40 generates top hat light having a flat intensity distribution as compared to light of Gaussian distribution. Even in the case of top hat type light, the intensity distribution is not completely flat, and the light intensity becomes weaker as it is separated from the central side (directly below the light source 41).
  • the deuterium lamp 40 emits light having a spread emitted from the light source 41 (see FIG. 1), which is a point light source, and specifically, vacuum ultraviolet light taking a conical light path with the light source 41 at the top. Toward the wafer W.
  • the light irradiated from the deuterium lamp 40 has a circular irradiation range on the irradiation surface when the light shielding is not performed, but a part of the light is shielded by the polygon cylinder 50 described later
  • the irradiation range becomes a polygonal shape (hexagonal in the example of the present embodiment) (details will be described later).
  • FIG. 1 and FIG. 2 etc. the outermost light path among the light paths of the vacuum ultraviolet light is shown by a dashed dotted line.
  • the light irradiation device 4 includes a plurality of deuterium lamps 40.
  • the deuterium lamps 40 are arranged at predetermined intervals so that the light irradiation distribution on the irradiation surface of the wafer W becomes uniform. For example, as shown in FIG. 3, one deuterium lamp 40 is provided immediately above the center of the wafer W, and along the circumference (specifically, slightly inside of the circumference) of the disk-shaped wafer W. Six deuterium lamps 40 are provided at equal intervals.
  • a shutter (not shown) may be provided between the deuterium lamp 40 and the polygonal cylinder 50.
  • the deuterium lamps 40 have the same illuminance value of the vacuum ultraviolet light to be irradiated, the light beam angle of the vacuum ultraviolet light to be irradiated, and the separation distance from the wafer W.
  • the polygonal cylinder 50 is a light shielding portion provided corresponding to each of the deuterium lamps 40 so as to shield the overlap of the irradiation ranges of vacuum ultraviolet light irradiated from the plurality of deuterium lamps 40.
  • the polygonal cylinder 50 removes (absorbs, cuts) the light emission of the end region of the vacuum ultraviolet light emitted from the deuterium lamp 40 to emit vacuum ultraviolet light from the plurality of deuterium lamps 40. It may be to block the overlap of
  • the polygonal cylinder 50 corresponds to the deuterium lamp 40 in a one-to-one correspondence with the polygonal cylinder 50 corresponding to the deuterium lamp 40, and is provided immediately below the light source 41 of the deuterium lamp 40. Say (see Figure 3).
  • the polygon tube 50 is provided so that the light source 41 is positioned on the central axis when viewed from the traveling direction of the vacuum ultraviolet light.
  • the polygon cylinder 50 extends in the traveling direction of the vacuum ultraviolet light over substantially the entire area between the deuterium lamp 40 and the wafer W.
  • the substantially entire area between the deuterium lamp 40 and the wafer W is at least half the length of the entire length between the deuterium lamp 40 and the wafer W.
  • the polygon tube 50 can be appropriately suppressed from overlapping the vacuum ultraviolet light of the other deuterium lamps 40 by being extended over substantially the entire area between the deuterium lamps 40 and the wafer W.
  • the polygon cylinder 50 is formed in a polygonal shape, specifically, a regular hexagonal shape as viewed from the direction of travel of vacuum ultraviolet light (see FIG. 3). As shown in FIG. 3, when viewed from the traveling direction of vacuum ultraviolet light, the plurality of polygonal cylinders 50 are provided in close contact with each other without any gap between adjacent polygonal cylinders 50.
  • the polygonal cylinder 50 provided corresponding to the deuterium lamp 40 located above the center of the wafer W has each side of the regular hexagon the other polygon It is provided in contact with the opposite side of a cylinder 50 (six polygon cylinders 50 provided corresponding to the deuterium lamps 40 provided at equal intervals along the circumference of the wafer W).
  • the six polygonal cylinders 50 provided corresponding to the deuterium lamps 40 provided at equal intervals along the circumference of the wafer W have one side at the center The two sides of the polygonal cylinder 50 are in contact with the adjacent sides of the polygonal cylinder 50 adjacent to each other on the circumference.
  • the polygonal cylinder 50 is formed in a cylindrical shape extending in the traveling direction of the vacuum ultraviolet light (see FIG. 2).
  • the polygon tube 50 may be made of any material as long as it has a low reflectance to vacuum ultraviolet light and a high absorption (cut) rate.
  • the material having a low reflectance means, for example, a material having a reflectance of 90% or less, for example, 60% or less, for vacuum ultraviolet light.
  • a substrate of SUS, aluminum or the like coated with an organic film for reducing the reflectance, for forming irregularities on the surface of the substrate described above What has been subjected to blasting treatment, roughening treatment, or the like can be used.
  • the surface roughening treatment is, for example, an alumite treatment performed on aluminum as a base material.
  • the above-described metal such as SUS or aluminum may be used as the base material, but a resin material or the like with a low outgas may be used as the base material.
  • the polygonal tube 50 extends from immediately below the light source 41 to a position close to the irradiation surface of the wafer W.
  • the vacuum ultraviolet light irradiated from each deuterium lamp 40 is a light source It passes through the inside of the corresponding polygon cylinder 50 from the point 41 to the irradiation surface of the wafer W, and the irradiation range on the wafer W becomes a range corresponding to the shape of the polygon cylinder 50 (see FIG. 3).
  • the plurality of polygonal cylinders 50 are continuous (in close contact with each other), the irradiation ranges of the vacuum ultraviolet light passing through the adjacent polygonal cylinders 50 on the wafer W are continuous with each other. Not overlapping (or overlapping range is small).
  • the shape of the polygonal cylinder 50 may be determined such that a portion (portion away from the center) where the intensity of vacuum ultraviolet light emitted from the light source 41 of the deuterium lamp 40 is weak can be shielded.
  • the shape of the polygon tube 50 is determined such that light is blocked, for example, from 70 to 80%, for example, 90% or more of the strongest portion, for example.
  • the light irradiation device 4 of the substrate processing apparatus 1 irradiates the wafer W with vacuum ultraviolet light having a wavelength of 200 nm or less and taking a conical optical path with the light source 41 at the top.
  • Polygon cylinder 50 provided corresponding to each deuterium lamp 40 so as to shield the overlapping portion of the plurality of deuterium lamps 40 and the irradiation range of the vacuum ultraviolet light irradiated from the plurality of deuterium lamps 40
  • the polygonal cylinder 50 is formed in a polygonal shape as viewed from the traveling direction of vacuum ultraviolet light.
  • FIGS. 4 (a) and 4 (b) are explanatory views of a light irradiation apparatus according to a comparative example.
  • FIG. 4A schematically shows a light irradiation device in which a plurality of deuterium lamps 40 are provided.
  • FIG. 4 (b) shows the irradiation intensity of the light irradiation device shown in FIG. 4 (a).
  • the broken line shows the irradiation intensity of each deuterium lamp 40
  • the solid line shows the adjacent weights.
  • the total irradiation intensity of the hydrogen lamp 40 is shown.
  • FIGS. 4A and 4B when the deuterium lamp 40 is disposed so that the irradiation ranges of the lights do not overlap as much as possible (the center deuterium lamp shown in FIG. 4A) In the deuterium lamp 40 and the right side deuterium lamp 40), since the irradiation range is circular, a portion E2 (see FIG. 4B) in which the irradiation intensity of light becomes weak is generated.
  • the irradiation range of the light irradiated from each point deuterium lamp 40 is sufficiently overlapped (the deuterium in the center shown in FIG.
  • the problem is that the lamp 40 and the deuterium lamp 40 on the left side are required, and in this case, the irradiation intensity of the overlapping portion E1 (see FIG. 4B) becomes extremely strong.
  • the wafer W is irradiated with light from a plurality of light sources, it is difficult to uniformly irradiate the light to the irradiation surface of the wafer W.
  • the light irradiation device 4 overlapping portions of a plurality of vacuum ultraviolet light irradiated toward the wafer W with a conical light path are provided corresponding to the respective deuterium lamps 40.
  • the light is shielded by the polygonal tube 50.
  • the irradiation range of each vacuum ultraviolet light in the wafer W becomes polygonal. Since the irradiation range is not circular as in the comparative example shown in FIG. 4 but is polygonal (specifically, regular hexagonal), the irradiation ranges of vacuum ultraviolet light having passed through adjacent polygon tubes 50 are continuous with each other. It is possible not to overlap (or to reduce the overlapping range) as well. That is, according to the light irradiation apparatus 4 of this embodiment, the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be improved.
  • the polygonal cylinder 50 described above is formed in a tubular shape extending in the direction of travel of vacuum ultraviolet light.
  • the polygonal cylinder 50 provided corresponding to the deuterium lamp 40 extends in the height direction (the advancing direction of the vacuum ultraviolet light) and is formed in a cylindrical shape, so that the corresponding polygonal cylinder 50 corresponds to the deuterium
  • the influence of vacuum ultraviolet light from deuterium lamps 40 other than the lamp 40 can be appropriately eliminated. That is, overlapping of the irradiation range with the vacuum ultraviolet light of the other deuterium lamp 40 can be appropriately prevented, and the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved.
  • the light irradiation device 4 described above uses the deuterium lamp 40 as a light irradiation unit, and the near ultraviolet light having a wavelength of more than 200 nm is also Can be irradiated.
  • the wavelength range of the spectrum of the light irradiated from the deuterium lamp 40 is relatively wide, for example, when a resist pattern is formed on the surface of the wafer W, the resist pattern is a light of various wavelengths. It will receive energy. As a result, various reactions occur on the surface of the resist pattern to increase the fluidity, and as a result, the effect of improving the surface roughness can be improved.
  • the above-described deuterium lamp 40 generates vacuum ultraviolet light having a wavelength of 160 nm or less.
  • the wavelength of the peak of the continuous spectrum is 160 nm or less. Therefore, for example, when a resist pattern is formed on the surface of the wafer W by generating vacuum ultraviolet light of 160 nm or less Can further improve the roughening improvement effect.
  • the illuminance value of the vacuum ultraviolet light emitted from a part of the deuterium lamp 40x among the plurality of light irradiation parts is the illuminance of the vacuum ultraviolet light irradiated from the other deuterium lamps 40. It may be different from the value.
  • the illuminance value of the vacuum ultraviolet light emitted from the deuterium lamp 40 x is larger than the illuminance value of the vacuum ultraviolet light irradiated from the deuterium lamp 40.
  • the light ray angle of the vacuum ultraviolet light emitted from a part of the deuterium lamp 40 y among the plurality of light irradiation parts is the light ray of the vacuum ultraviolet light irradiated from another deuterium lamp 40. It may be different from the angle.
  • the light ray angle of vacuum ultraviolet light emitted from the deuterium lamp 40y is made larger than the light ray angle of vacuum ultraviolet light emitted from the deuterium lamp 40.
  • FIG. 7 even if the separation distance between a part of the deuterium lamps 40 z of the plurality of light irradiation parts from the wafer W is different from the separation distance between the other deuterium lamps 40 and the wafer W Good.
  • the separation distance between the deuterium lamp 40z and the wafer W is smaller than the separation distance between the deuterium lamp 40 and the wafer W.
  • the irradiation distribution can be positively adjusted by making the illuminance value, the light beam angle, or the height (the distance from the wafer W) different among the plurality of light irradiation units.
  • the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved according to the irradiation condition from the above.
  • the light irradiation device may further include a separation distance adjustment unit 60 shown in FIG.
  • the separation distance adjustment unit 60 is a mechanism that adjusts the separation distance of the polygonal cylinder 50, which is a light shielding unit, from the wafer W. Specifically, the separation distance adjustment unit 60 adjusts the separation distance between the polygon cylinder 50 and the wafer W by moving the polygon cylinder 50 up and down according to the control of the controller (not shown).
  • the polygonal cylinder 50 is configured to irradiate light uniformly to the irradiation surface of the wafer W by forming the irradiation range into a polygonal shape, but the polygonal cylinder 50 is provided.
  • the shadow of the polygon tube 50 is projected on the irradiation surface of the wafer W, and the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can not be sufficiently achieved by the shadow.
  • the height (the distance from the wafer W) of the polygonal cylinder 50 by the separation distance adjusting unit 60 for example, the spread of the irradiation light to the wafer W from the adjacent polygonal cylinder 50 is adjusted It is possible to eliminate the shadowed portion by overlapping the irradiation lights.
  • the height of the polygonal cylinder 50 adjusted by the separation distance adjustment unit 60 is determined by, for example, evaluating in advance the irradiation angle from the deuterium lamp 40, the illuminance of each part of the wafer W, and the like. .
  • the light irradiation apparatus may further include a wafer rotating unit 70 (substrate rotating unit) shown in FIG.
  • the wafer rotation unit 70 is a mechanism that rotates the wafer W in a state where the irradiation surface of the wafer W is opposed to the deuterium lamp 40.
  • the wafer rotation unit 70 is connected to the mounting table 20 on which the wafer W is mounted via the rotation axis, and the rotation table is rotated according to the control of the controller (not shown). 20 and the wafer W mounted on the mounting table 20 are rotated.
  • the light irradiation apparatus may rotate the polygon cylinder 50 and the deuterium lamp 40 with respect to the wafer W instead of the wafer W.
  • the light irradiation apparatus may further include a parallel movement unit that reciprocates the polygon cylinder 50 or the wafer W in a direction (horizontal direction) parallel to the irradiation surface of the wafer W by about 10 mm.
  • the irradiation position of the deuterium lamp 40 changes, the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved.
  • the aspect in which the wafer W is reciprocated in the direction parallel to the irradiation surface is different from the aspect in which the wafer W is rotated, and there is an advantage that a portion (for example, the center of rotation) where the irradiation location does not change hardly occurs.
  • the number of the deuterium lamps 40 capable of irradiating the entire surface of the wafer W simultaneously can be obtained.
  • the number of the polygon cylinder 50 and the deuterium lamp 40 may be small (for example, one by one).
  • the light irradiation apparatus may further include a diffusion unit 80 shown in FIG.
  • the diffusion unit 80 is a member that diffuses vacuum ultraviolet light above the polygonal cylinder 50.
  • the diffusion unit 80 is a mesh-like member, and has a function of reflecting and diffusing a part of vacuum ultraviolet light.
  • the diffusion unit 80 may be a rod-like member as long as it reflects and diffuses part of the vacuum ultraviolet light.
  • the area of the portion for reflecting and diffusing the vacuum ultraviolet light is smaller than the area of the portion for passing the vacuum ultraviolet light downward.
  • the diffusion part 80 is provided above the polygonal cylinder 50, so that the variation of the irradiation light is averaged.
  • the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved.
  • polygonal cylinder 50 has been described as having a regular hexagonal shape as viewed from the traveling direction of vacuum ultraviolet light, the present invention is not limited to this.
  • the number of polygonal cylinders 50 is not limited to the example shown in FIG. 3, and for example, as shown in FIG. 11B, a total of 13 polygonal cylinders 50y may be provided.
  • the light shielding portion has been described as the polygonal cylinder 50, the invention is not limited to this, and the light shielding portion may be a cylinder extending in the height direction if it is formed in a polygonal shape as viewed from the traveling direction of vacuum ultraviolet light. It does not have to be a member of the shape.
  • the light shielding portion may have a mask 200 (plate-like light shielding member) formed in a plate shape.
  • the mask 200 is formed in a polygonal shape as seen from the traveling direction of the vacuum ultraviolet light, similarly to the polygonal tube 50. Specifically, as shown in FIG.
  • the mask 200 is in the form of a thin plate having a small thickness (thickness in the traveling direction of vacuum ultraviolet light). Even when such a mask 200 is provided, the irradiation range of each vacuum ultraviolet light on the wafer W becomes a polygonal shape, so that the irradiation area of the vacuum ultraviolet light does not overlap while the light is not irradiated (or the irradiation intensity becomes weak). Can be suppressed.
  • the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be improved.
  • the mask 200 is formed in a thin plate shape as described above, the exhaust by the vacuum pump in the processing chamber can be facilitated as compared with the case where the polygonal cylinder 50 is provided. By this, the vacuum suction in the processing chamber can be more appropriately performed.
  • the light shielding portion is formed in a cylindrical shape extending in the traveling direction of the vacuum ultraviolet light and at a position closer to the wafer W between the deuterium lamp 40 and the wafer W (that is, a lower position).
  • a mask 200 formed in a plate shape.
  • the polygon cylinder 250 has a length equal to or less than half of the total length between the deuterium lamp 40 and the wafer W, for example.
  • the polygon cylinder 250 is provided only in a region smaller than the polygon cylinder 50 (see FIG. 2) provided substantially in the entire area between the deuterium lamp 40 and the wafer W and close to the wafer W. It is done.
  • the mask 200 is provided below the polygon cylinder 250, and more specifically, in contact with the lower end of the polygon cylinder 250.
  • the mask 200 may be provided at a position as close to the wafer W as possible from the viewpoint of limiting the irradiation range of light, but the mask 200 is separated from the wafer W by a distance (for example, 30 mm) that enables transfer of the wafer W by the arm. doing.
  • the size of the region through which light passes is made smaller than that of the polygon cylinder 250 when viewed from the direction of travel of vacuum ultraviolet light. Thereby, the irradiation range of vacuum ultraviolet light can be appropriately limited by the mask 200.
  • the substrate processing apparatus includes a processing chamber 210 and a light source chamber 212.
  • the processing chamber 210 includes a housing 214, a rotation holding unit 216, a gate valve 218, and a vacuum pump 222.
  • the housing 214 is, for example, a part of a vacuum container provided in the atmosphere, and is configured to be able to store the wafer W transferred by a transfer mechanism (not shown).
  • the housing 214 presents a bottomed cylindrical body opened upward. Through holes 214 a and 214 c are provided on the wall surface of the housing 214.
  • the rotation holding unit 216 includes a rotating unit 216a, a shaft 216b, and a holding unit 216c.
  • the rotating unit 216a operates based on an operation signal from a controller (not shown) to rotate the shaft 216b.
  • the rotating unit 216a is, for example, a power source such as an electric motor.
  • the holding portion 216c is provided at the tip of the shaft 216b.
  • the holding unit 216 c can hold the wafer W in a state in which the posture of the wafer W is substantially horizontal.
  • the rotating unit 216a rotates while the wafer W is placed on the holding unit 216c, the wafer W rotates around an axis (rotational axis) perpendicular to the surface.
  • the gate valve 218 is disposed on the outer surface of the side wall of the housing 214.
  • the gate valve 218 operates based on an instruction of a controller (not shown), and is configured to close and open the through hole 214a of the housing 214.
  • the through hole 214 a is opened by the gate valve 218, the wafer W can be carried into and out of the housing 214. That is, the through hole 214 a also functions as an entrance and exit of the wafer W.
  • the vacuum pump 222 is configured to discharge the gas from the inside of the housing 214 to bring the inside of the housing 214 into a vacuum state (low oxygen state).
  • the light source chamber 212 includes a housing 224, a partition wall 226, a shutter member 228, and a plurality of deuterium lamps 40.
  • the housing 224 is, for example, a part of a vacuum vessel provided in an air atmosphere.
  • the housing 224 presents a bottomed cylindrical body opened downward.
  • the housing 224 is disposed such that the open end of the housing 224 faces the open end of the housing 214.
  • the partition wall 226 is disposed between the housings 214 and 224, and is configured to partition a space in the housing 214 and a space in the housing 224.
  • the partition wall 226 functions as a top wall of the housing 214 and also functions as a bottom wall of the housing 224. That is, the case 224 is disposed adjacent to the case 214 in a direction perpendicular to the surface of the wafer W.
  • the space V in the housing 224 after being partitioned by the partition wall 226 is a flat space whose height in the vertical direction is smaller than the size in the horizontal direction.
  • the partition wall 226 is provided with a plurality of through holes 226a.
  • the plurality of through holes 226a are arranged to overlap the shutter member 228 in the vertical direction.
  • Each of the plurality of through holes 226a is closed by a window member capable of transmitting vacuum ultraviolet light.
  • the window member may be, for example, glass (eg, magnesium fluoride glass).
  • the shutter member 228 is disposed in the space V, and is configured to be able to block and pass vacuum ultraviolet light emitted by the deuterium lamp 40.
  • the shutter member 228 has, for example, a disk shape.
  • the shutter member 228 is provided with a plurality of through holes.
  • a mask provided below the polygon cylinder 250 while appropriately suppressing overlapping of the irradiation ranges of vacuum ultraviolet light by the polygon cylinder 250 The irradiation range of vacuum ultraviolet light can be appropriately limited by 200.
  • the length of the polygonal cylinder 250 can be shortened, and the exhaust by the vacuum pump 222 can be appropriately performed to appropriately evacuate the processing chamber 210.
  • the mask 200 is provided in contact with the lower end of the polygonal cylinder 250, thereby suppressing the leakage of vacuum ultraviolet light from between the polygonal cylinder 250 and the mask 200, and the irradiation range of the vacuum ultraviolet light Can be appropriately suppressed.
  • the light shielding portion may be formed only by the small polygonal cylinder 250 provided below (that is, without providing the mask 200).
  • the mask 200 may be provided to be separated from the lower end of the polygonal cylinder 250. Accordingly, the evacuation by the vacuum pump 222 can be easily performed, and the evacuation by the vacuum pump 222 can be more appropriately performed.
  • the size of the region through which light of the mask 200 and the polygon cylinder 50 passes may be substantially the same as viewed from the direction of travel of vacuum ultraviolet light.
  • the polygon cylinder 50 may be provided with one or several holes.
  • Light irradiation device 40, 40x, 40y, 40z Deuterium lamp (light irradiation part) 41 Light source 50, 50x, 50y Polygonal cylinder (light shielding part, cylindrical light shielding member) 60 Distance Adjustment unit 70 wafer rotation unit (substrate rotation unit) 80 diffusion unit 200 mask (light shielding unit, plate-like light shielding member) W wafer

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PCT/JP2018/045734 2017-12-26 2018-12-12 光照射装置 WO2019131144A1 (ja)

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CN201880081427.5A CN111492314A (zh) 2017-12-26 2018-12-12 光照射装置
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JP2021040026A (ja) * 2019-09-03 2021-03-11 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7100398B1 (ja) 2021-05-06 2022-07-13 株式会社 ベアック 露光装置
WO2024090327A1 (ja) * 2022-10-28 2024-05-02 東京エレクトロン株式会社 基板処理装置

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CN111492314A (zh) 2020-08-04
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JP6920469B2 (ja) 2021-08-18
KR20200097777A (ko) 2020-08-19
TW201939169A (zh) 2019-10-01

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