JP6920469B2 - 光照射装置 - Google Patents

光照射装置 Download PDF

Info

Publication number
JP6920469B2
JP6920469B2 JP2019562960A JP2019562960A JP6920469B2 JP 6920469 B2 JP6920469 B2 JP 6920469B2 JP 2019562960 A JP2019562960 A JP 2019562960A JP 2019562960 A JP2019562960 A JP 2019562960A JP 6920469 B2 JP6920469 B2 JP 6920469B2
Authority
JP
Japan
Prior art keywords
light
substrate
vacuum ultraviolet
light irradiation
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019562960A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2019131144A1 (ja
Inventor
岩田　和也
和也 岩田
秀明 柏木
秀明 柏木
勝 友野
勝 友野
古閑　法久
法久 古閑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2019131144A1 publication Critical patent/JPWO2019131144A1/ja
Application granted granted Critical
Publication of JP6920469B2 publication Critical patent/JP6920469B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/68—Lamps in which the main discharge is between parts of a current-carrying guide, e.g. halo lamp

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Steering Control In Accordance With Driving Conditions (AREA)
JP2019562960A 2017-12-26 2018-12-12 光照射装置 Active JP6920469B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017249509 2017-12-26
JP2017249509 2017-12-26
JP2018115179 2018-06-18
JP2018115179 2018-06-18
PCT/JP2018/045734 WO2019131144A1 (ja) 2017-12-26 2018-12-12 光照射装置

Publications (2)

Publication Number Publication Date
JPWO2019131144A1 JPWO2019131144A1 (ja) 2020-11-19
JP6920469B2 true JP6920469B2 (ja) 2021-08-18

Family

ID=67063536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019562960A Active JP6920469B2 (ja) 2017-12-26 2018-12-12 光照射装置

Country Status (5)

Country Link
JP (1) JP6920469B2 (zh)
KR (1) KR102667236B1 (zh)
CN (1) CN111492314A (zh)
TW (1) TWI804543B (zh)
WO (1) WO2019131144A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7356847B2 (ja) * 2019-09-03 2023-10-05 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7100398B1 (ja) 2021-05-06 2022-07-13 株式会社 ベアック 露光装置
JP2024064405A (ja) * 2022-10-28 2024-05-14 東京エレクトロン株式会社 基板処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2597981B2 (ja) * 1985-08-28 1997-04-09 ソニー株式会社 レジスト膜の硬化処理方法
JPH0534926A (ja) * 1991-07-30 1993-02-12 Sanee Giken Kk 露光装置
JP2001284235A (ja) * 2000-03-31 2001-10-12 Canon Inc 投影露光装置及びデバイス製造方法
JP2005197349A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 微細パターン形成方法及び半導体装置の製造方法
JP2006323060A (ja) * 2005-05-18 2006-11-30 Ushio Inc 偏光光照射装置
KR100983582B1 (ko) * 2007-12-31 2010-10-11 엘지디스플레이 주식회사 노광 장치 및 노광 방법과 그 노광 장치를 이용한 박막패터닝 방법
JP5014208B2 (ja) * 2008-03-13 2012-08-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP5222667B2 (ja) * 2008-09-11 2013-06-26 株式会社プロテック 露光機用光源装置
US9390941B2 (en) * 2009-11-17 2016-07-12 Hitachi High-Technologies Corporation Sample processing apparatus, sample processing system, and method for processing sample
JP5251994B2 (ja) * 2010-08-06 2013-07-31 ウシオ電機株式会社 光照射装置および光照射方法
JP5598239B2 (ja) * 2010-10-08 2014-10-01 ウシオ電機株式会社 光照射装置
JP2013077428A (ja) * 2011-09-30 2013-04-25 Brother Ind Ltd 有機ｅｌ素子の製造方法
JP2013229454A (ja) * 2012-04-26 2013-11-07 Hitachi High-Technologies Corp 膜厚モニタを有するｖｕｖ処理装置および処理方法
JP5861696B2 (ja) * 2013-03-28 2016-02-16 ウシオ電機株式会社 光照射装置
JP2015082561A (ja) * 2013-10-22 2015-04-27 キヤノン株式会社 投影露光装置
JP6398839B2 (ja) * 2015-03-31 2018-10-03 ウシオ電機株式会社 光源装置

Also Published As

Publication number Publication date
JPWO2019131144A1 (ja) 2020-11-19
KR102667236B1 (ko) 2024-05-21
CN111492314A (zh) 2020-08-04
WO2019131144A1 (ja) 2019-07-04
TWI804543B (zh) 2023-06-11
KR20200097777A (ko) 2020-08-19
TW201939169A (zh) 2019-10-01

Similar Documents

Publication Publication Date Title
KR102543747B1 (ko) 기판 처리 장치 및 기판을 처리하기 위한 방법
JP6920469B2 (ja) 光照射装置
WO2014156628A1 (ja) 光照射装置
KR20190013471A (ko) 열처리 장치의 배기 방법
CN110517952B (zh) 基片处理装置
KR20190024666A (ko) 열처리 장치 및 열처리 방법
KR102052276B1 (ko) 파티클 제거 방법 및 열처리 장치
TWI829724B (zh) 基板處理裝置、基板處理方法及記憶媒體
US11733612B2 (en) Substrate processing apparatus and method of processing substrate
US20200409269A1 (en) Light irradiating device, light irradiating method and recording medium
JP2015088663A (ja) 基板処理装置及び基板処理方法
JP5891255B2 (ja) 熱処理装置
JP2009231608A (ja) 熱処理装置
TWI713118B (zh) 熱處理裝置
JP3078528B2 (ja) 被処理膜の改質装置
JP2702699B2 (ja) 処理装置
JP2020160136A (ja) ランプモジュールおよび液晶パネル製造装置
JP2015084387A (ja) 基板処理装置及び基板処理方法
JP2005044881A (ja) 熱処理装置
JP2010131570A (ja) 紫外線照射装置及び紫外線照射処理装置
KR20070066181A (ko) 반도체 제조 장치

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210629

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210726

R150 Certificate of patent or registration of utility model

Ref document number: 6920469

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250