WO2019041797A1 - 一种低接触电阻低压铝电解电容器用电极箔腐蚀方法 - Google Patents
一种低接触电阻低压铝电解电容器用电极箔腐蚀方法 Download PDFInfo
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- 239000011888 foil Substances 0.000 title claims abstract description 62
- 238000005530 etching Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000003990 capacitor Substances 0.000 title claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 74
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 60
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 25
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 15
- 239000008399 tap water Substances 0.000 claims abstract description 14
- 235000020679 tap water Nutrition 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 8
- 239000011148 porous material Substances 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims description 22
- 238000005260 corrosion Methods 0.000 claims description 22
- 238000005406 washing Methods 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 5
- 238000011282 treatment Methods 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000012792 core layer Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 4
- 238000007654 immersion Methods 0.000 abstract 3
- 239000000843 powder Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
Definitions
- the present invention relates to an electrochemical etching method for a low pressure anode foil for a capacitor.
- the low-frequency corrosion foil frequency conversion corrosion method for aluminum electrolytic capacitors is: 1 acid liquid pretreatment; 2 hole corrosion; 3 reaming corrosion; 4 post treatment, cleaning and annealing.
- the corrosion frequency uses the power frequency as the power frequency (50Hz). After corrosion, the thickness of the residual core layer is uneven, the corrosion layer is corroded, and the corrosion aluminum powder is not fully cleaned, resulting in a large contact resistance of the electrode foil after formation. In addition, the cleaning effect Poor, it will also lead to residual impurity ions, affecting electrode foil leakage current and aluminum electrolytic capacitor life.
- the object of the present invention is to overcome the above deficiencies and provide an electrochemical corrosion method for a low-voltage anode foil for a capacitor having good cleaning effect, less impurity ions, low contact resistance and long service life.
- an electrode foil etching method for a low contact resistance low voltage aluminum electrolytic capacitor comprising the following steps:
- the anode foil obtained in the step (a) is used in an amount of 6 to 12 wt% hydrochloric acid, 0.05 to 1 wt% sulfuric acid, at a temperature of 5 to 50 ° C, and a current density of 0.1 to 1 A/cm 2 for 10 to 85 seconds;
- the anode foil obtained in the step (b) is 6 to 12 wt% hydrochloric acid, 0.05 to 1 wt% sulfuric acid, and is subjected to a temperature of 5 to 50 ° C for 10 to 85 seconds;
- the anode foil obtained in the step (e) is subjected to pore reaming in 6 to 12 wt% hydrochloric acid, 0.05 to 1 wt% sulfuric acid, and 0.01 to 1 wt% phosphoric acid etching solution, and the current density is 0.1 to 1 A/cm 2 , and the temperature is 10 ⁇ 45°C, low frequency corrosion for 10 ⁇ 85 seconds according to the 5 ⁇ 35Hz power frequency of sine wave change;
- the anode foil obtained by the step (f) is treated with 6 to 12 wt% hydrochloric acid, 0.05 to 1 wt% sulfuric acid, 0.01 to 1 wt% phosphoric acid, and is subjected to a temperature of 10 to 45 ° C for 10 to 85 seconds;
- the lye pretreatment, the boring and the reaming process are carried out step by step, and after each step, the bath liquid treatment and the warm water washing process are added.
- the corrosion residual morphology of the uniform residual core layer is obtained by controlling the power frequency. A low frequency corrosion method with low contact resistance.
- Figure 1 is a cross-sectional view of a comparative electrode foil
- the anode foil obtained in the step (a) is treated with 6 wt% hydrochloric acid and 0.1 wt% sulfuric acid at a temperature of 30 ° C and a current density of 0.3 A/cm 2 for 20 seconds;
- the anode foil obtained in the step (b) is treated with 6 wt% hydrochloric acid and 0.1 wt% sulfuric acid at a temperature of 30 ° C for 20 seconds;
- the anode foil obtained in the step (e) is subjected to reaming etching in 6 wt% hydrochloric acid, 0.1 wt% sulfuric acid, 0.01 wt% phosphoric acid etching solution, a current density of 0.1 A/cm 2 , a temperature of 30 ° C, and a sine
- the frequency of the 5 to 35 Hz wave changes from low to high for low frequency corrosion for 20 seconds;
- the anode foil obtained by the treatment of the step (f) is treated with 6 wt% hydrochloric acid, 0.1 wt% sulfuric acid, 0.01 wt% phosphoric acid, and the temperature is 30 ° C for 20 seconds;
- the anode foil obtained in the step (a) is treated with 8 wt% hydrochloric acid and 0.3 wt% sulfuric acid at a temperature of 40 ° C and a current density of 0.5 A/cm 2 for 40 seconds;
- the anode foil obtained in the step (e) is subjected to reaming etching in an 8 wt% hydrochloric acid, 0.3 wt% sulfuric acid, 0.1 wt% phosphoric acid etching solution, a current density of 0.3 A/cm 2 , a temperature of 35 ° C, and a sine
- the frequency of the 5 to 35 Hz wave changes from low to high for low frequency corrosion for 40 seconds;
- the anode foil obtained by the treatment of the step (f) is treated with 8 wt% hydrochloric acid, 0.3 wt% sulfuric acid, 0.1 wt% phosphoric acid, and the temperature is 35 ° C for 40 seconds;
- the anode foil obtained in the step (a) is treated with 10 wt% hydrochloric acid and 0.5 wt% sulfuric acid at a temperature of 45 ° C and a current density of 0.7 A/cm 2 for 60 seconds;
- the anode foil obtained in the step (b) is treated with 10 wt% hydrochloric acid and 0.5 wt% sulfuric acid at a temperature of 45 ° C for 60 seconds;
- the anode foil obtained in the step (e) is subjected to reaming etching in 10 wt% hydrochloric acid, 0.5 wt% sulfuric acid, 0.5 wt% phosphoric acid etching solution, a current density of 0.4 A/cm 2 , a temperature of 40 ° C, and a sine
- the frequency of the 5 to 35 Hz wave changes from low to high for low frequency corrosion for 60 seconds;
- the anode foil obtained by the treatment of the step (f) is treated with 10 wt% hydrochloric acid, 0.5 wt% sulfuric acid, and 0.5 wt% phosphoric acid at a temperature of 40 ° C for 60 seconds;
- the anode foil obtained in the step (a) is treated with 12 wt% hydrochloric acid and 0.8 wt% sulfuric acid at a temperature of 50 ° C and a current density of 0.9 A/cm 2 for 80 seconds;
- the anode foil obtained in the step (b) is treated with 12 wt% hydrochloric acid and 0.8 wt% sulfuric acid at a temperature of 50 ° C for 80 seconds;
- the anode foil obtained in the step (e) is subjected to reaming etching in 12 wt% hydrochloric acid, 0.8 wt% sulfuric acid, 0.8 wt% phosphoric acid etching solution, a current density of 0.5 A/cm 2 , a temperature of 45 ° C, and a sine
- the frequency of the 5 to 35 Hz wave changes from low to high for low frequency corrosion for 80 seconds;
- the anode foil obtained by the treatment of the step (f) is treated with 12 wt% hydrochloric acid, 0.8 wt% sulfuric acid, and 0.8 wt% phosphoric acid at a temperature of 45 ° C for 80 seconds;
- step (b) The anode foil obtained in the step (a) is treated with 8 wt% hydrochloric acid and 0.5 wt% sulfuric acid at a temperature of 50 ° C and a current density of 0.3 A/cm 2 for 3 minutes;
- the anode foil obtained in the step (b) is subjected to pore reaming corrosion in an 8 wt% hydrochloric acid, 0.5 wt% sulfuric acid etching solution, a current density of 0.3 A/cm 2 , a temperature of 50 ° C, and a 50 Hz power source which varies according to a sine wave. Electrochemical etching for 4 minutes;
- the invention is carried out step by step in the pre-treatment of the lye, the boring and the reaming process, and the treatment in the bath and the warm water cleaning process are added after each step, and the uniform residual layer corrosion is obtained by controlling the power frequency during the reaming process. Morphology.
- the present invention is not limited to the above embodiments, and all the modes in which the present invention is constructed by a similar structure and method of the present invention are within the scope of the present invention.
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- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
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Abstract
本发明公开了一种低接触电阻低压铝电解电容器用电极箔腐蚀方法,包括以下步骤:用氢氧化钠溶液浸泡前处理;盐酸、硫酸溶液加电腐蚀10~85秒,盐酸、硫酸溶液浸泡10~85秒,自来水清洗,重复腐蚀、浸泡及清洗步骤4次;在盐酸、硫酸及磷酸腐蚀液中进行扩孔加电腐蚀10~85秒,盐酸、硫酸及磷酸溶液浸泡10~85秒,自来水清洗,重复腐蚀、浸泡及清洗步骤8次;采用盐酸溶液浸泡、硝酸溶液浸泡,纯水清洗后退火处理。本发明采用多级发孔多级低频扩孔控制腐蚀形貌,并对应进行多步槽液中处理及温水清洗,使腐蚀过程的铝粉及杂质离子得到充分清洗,最终得到残芯层厚度均匀、腐蚀层铝含量适中、铝粉及杂质离子含量低的低接触电阻低压铝电解电容器用电极箔,化成后接触电阻可降低40%以上。
Description
本发明涉及一种电容器用低压阳极箔的电化学腐蚀方法。
目前,铝电解电容器用低压腐蚀箔变频腐蚀方法为:①酸液前处理;②发孔腐蚀;③扩孔腐蚀;④后处理、清洗及退火。腐蚀过程使用电源频率为工频(50Hz),腐蚀后,残芯层厚度不均,腐蚀层腐蚀量较大,腐蚀铝粉未得到充分清洗,导致化成后电极箔接触电阻大;此外,清洗效果不佳,亦会导致残留杂质离子,影响电极箔漏电流及铝电解电容器的使用寿命。
发明内容:
本发明的目的是为了克服以上的不足,提供一种清洗效果好,杂质离子少,接触电阻低,使用寿命长的电容器用低压阳极箔的电化学腐蚀方法。
本发明的目的通过以下技术方案来实现:一种低接触电阻低压铝电解电容器用电极箔腐蚀方法,包括以下步骤:
(a)采用0.01~5wt%的氢氧化钠溶液,在20~60℃温度下浸泡电解电容器低压阳极箔0.5~3分钟;
(b)步骤(a)得到的阳极箔采用6~12wt%盐酸、0.05~1wt%硫酸,在温度为5~50℃、电流密度为0.1~1A/cm
2条件下作用10~85秒;
(c)步骤(b)得到的阳极箔采用6~12wt%盐酸、0.05~1wt%硫酸,在温度为5~50℃条件下作用10~85秒;
(d)步骤(c)得到的阳极箔采用温度为40~60℃的自来水清洗10~85秒;
(e)重复步骤(b)、(c、)(d)4次;
(f)步骤(e)处理得到的阳极箔在6~12wt%盐酸、0.05~1wt%硫酸、0.01~1wt%磷酸腐蚀液中进行扩孔腐蚀,电流密度为0.1~1A/cm
2,温度为10~45℃,按正弦波变化的5~35Hz电源频率进行低频腐蚀10~85秒;
(g)步骤(f)处理得到的阳极箔采用6~12wt%盐酸、0.05~1wt%硫酸、0.01~1wt%磷酸,在温度为10~45℃条件下作用10~85秒;
(h)步骤(g)得到的阳极箔采用温度为40~60℃的自来水清洗10~85秒;
(i)重复步骤(f)、(g)、(h)8次;
(j)采用2~6wt%的盐酸溶液,温度为20~80℃下浸泡30~180秒;
(k)采用0.1~4wt%的硝酸溶液,温度为20~80℃下浸泡30~180秒;
(l)采用纯水清洗30~180秒后,在400~460℃温度下退火处理20~180秒。
本发明与现有技术相比具有以下优点:
碱液前处理,发孔及扩孔过程分步进行,并在每一步后增加槽液中处理及温水清洗流程,扩孔过程中,通过控制电源频率,获得均匀残芯层腐蚀形貌,得到一种低接触电阻的低频腐蚀方法。
图1为对比例电极箔截面形貌图;
图2为本发明电极箔截面形貌图:
下面结合具体实施例对本发明作进一步的阐述,但本发明并不限于以 下实施例。所述方法无特别说明的均为常规方法。
实施例1
(a)将电解电容器低压阳极光箔置于0.01wt%的氢氧化钠溶液,在40℃温度下浸泡3分钟;
(b)步骤(a)得到的阳极箔采用6wt%盐酸、0.1wt%硫酸,在温度为30℃、电流密度为0.3A/cm
2条件下作用20秒;
(c)步骤(b)得到的阳极箔采用6wt%盐酸、0.1wt%硫酸,在温度为30℃条件下作用20秒;
(d)步骤(c)得到的阳极箔采用温度为40℃的自来水清洗30秒;
(e)重复步骤(b)、(c)、(d)4次;
(f)步骤(e)处理得到的阳极箔在6wt%盐酸、0.1wt%硫酸、0.01wt%磷酸腐蚀液中进行扩孔腐蚀,电流密度为0.1A/cm
2,温度为30℃,按正弦波变化的5~35Hz频率由低到高进行低频腐蚀20秒;
(g)步骤(f)处理得到的阳极箔采用6wt%盐酸、0.1wt%硫酸、0.01wt%磷酸,在温度为30℃条件下作用20秒;
(h)步骤(g)得到的阳极箔采用温度为40℃的自来水清洗30秒;
(i)重复步骤(f)、(g)、(h)8次;
(j)采用2wt%的盐酸溶液,温度为50℃下浸泡30秒;
(k)采用0.1wt%的硝酸溶液,温度为50℃下浸泡30秒;
(l)采用纯水清洗60秒后,在420℃温度下退火处理150秒。
实施例2
(a)将电解电容器低压阳极光箔置于0.5wt%的氢氧化钠溶液,在50 ℃温度下浸泡2分钟;
(b)步骤(a)得到的阳极箔采用8wt%盐酸、0.3wt%硫酸,在温度为40℃、电流密度为0.5A/cm
2条件下作用40秒;
(c)步骤(b)得到的阳极箔采用8wt%盐酸、0.3wt%硫酸,在温度为40℃条件下作用40秒;
(d)步骤(c)得到的阳极箔采用温度为45℃的自来水清洗40秒;
(e)重复步骤(b)、(c)、(d)4次;
(f)步骤(e)处理得到的阳极箔在8wt%盐酸、0.3wt%硫酸、0.1wt%磷酸腐蚀液中进行扩孔腐蚀,电流密度为0.3A/cm
2,温度为35℃,按正弦波变化的5~35Hz频率由低到高进行低频腐蚀40秒;
(g)步骤(f)处理得到的阳极箔采用8wt%盐酸、0.3wt%硫酸、0.1wt%磷酸,在温度为35℃条件下作用40秒;
(h)步骤(g)得到的阳极箔采用温度为45℃的自来水清洗40秒;
(i)重复步骤(f)、(g)、(h)8次;
(j)采用3wt%的盐酸溶液,温度为60℃下浸泡60秒;
(k)采用1wt%的硝酸溶液,温度为60℃下浸泡60秒;
(l)采用纯水清洗90秒后,在430℃温度下退火处理120秒。
实施例3
(a)将电解电容器低压阳极光箔置于2wt%的氢氧化钠溶液,在55℃温度下浸泡1分钟;
(b)步骤(a)得到的阳极箔采用10wt%盐酸、0.5wt%硫酸,在温度为45℃、电流密度为0.7A/cm
2条件下作用60秒;
(c)步骤(b)得到的阳极箔采用10wt%盐酸、0.5wt%硫酸,在温度 为45℃条件下作用60秒;
(d)步骤(c)得到的阳极箔采用温度为50℃的自来水清洗60秒;
(e)重复步骤(b)、(c)、(d)4次;
(f)步骤(e)处理得到的阳极箔在10wt%盐酸、0.5wt%硫酸、0.5wt%磷酸腐蚀液中进行扩孔腐蚀,电流密度为0.4A/cm
2,温度为40℃,按正弦波变化的5~35Hz频率由低到高进行低频腐蚀60秒;
(g)步骤(f)处理得到的阳极箔采用10wt%盐酸、0.5wt%硫酸、0.5wt%磷酸,在温度为40℃条件下作用60秒;
(h)步骤(g)得到的阳极箔采用温度为50℃的自来水清洗60秒;
(i)重复步骤(f)、(g)、(h)8次;
(j)采用4wt%的盐酸溶液,温度为70℃下浸泡90秒;
(k)采用2wt%的硝酸溶液,温度为70℃下浸泡90秒;
(l)采用纯水清洗120秒后,在440℃温度下退火处理90秒。
实施例4
(a)采用4wt%的氢氧化钠溶液,在60℃温度下浸泡电解电容器低压阳极箔0.5分钟;
(b)步骤(a)得到的阳极箔采用12wt%盐酸、0.8wt%硫酸,在温度为50℃、电流密度为0.9A/cm
2条件下作用80秒;
(c)步骤(b)得到的阳极箔采用12wt%盐酸、0.8wt%硫酸,在温度为50℃条件下作用80秒;
(d)步骤(c)得到的阳极箔采用温度为55℃的自来水清洗40秒;
(e)重复步骤(b)、(c)、(d)4次;
(f)步骤(e)处理得到的阳极箔在12wt%盐酸、0.8wt%硫酸、 0.8wt%磷酸腐蚀液中进行扩孔腐蚀,电流密度为0.5A/cm
2,温度为45℃,按正弦波变化的5~35Hz频率由低到高进行低频腐蚀80秒;
(g)步骤(f)处理得到的阳极箔采用12wt%盐酸、0.8wt%硫酸、0.8wt%磷酸,在温度为45℃条件下作用80秒;
(h)步骤(g)得到的阳极箔采用温度为80℃的自来水清洗40秒;
(i)重复步骤(f)、(g)、(h)8次;
(j)采用5wt%的盐酸溶液,温度为80℃下浸泡120秒;
(k)采用3wt%的硝酸溶液,温度为55℃下浸泡120秒;
(l)采用纯水清洗150秒后,在450℃温度下退火处理60秒。
对比例(现有腐蚀工艺)
(a)采用0.05wt%的磷酸溶液,在60℃温度下浸泡电解电容器低压阳极箔1分钟;
(b)步骤(a)得到的阳极箔采用8wt%盐酸、0.5wt%硫酸,在温度为50℃、电流密度为0.3A/cm
2条件下作用3分钟;
(c)步骤(b)处理得到的阳极箔在8wt%盐酸、0.5wt%硫酸腐蚀液中进行扩孔腐蚀,电流密度为0.3A/cm
2,温度为50℃,按正弦波变化的50Hz电源频率进行电化学腐蚀4分钟;
(d)步骤(c)处理得到的阳极箔采用1wt%的硝酸溶液,温度为70℃下浸泡60秒;
(e)采用纯水清洗60秒后,在420℃温度下退火处理60秒。
本发明腐蚀电极箔与现有工艺的腐蚀电极箔生产线化成后,对比数据结果如下(化成条件:己二酸铵槽液,Vfe=21V):
从对比结果可以看出,采用本发明腐蚀工艺产出的腐蚀电极箔化成后接触电阻显著降低,对比现有腐蚀工艺,降低超过40%。
本发明通过在碱液前处理,发孔及扩孔过程分步进行,并在每一步后增加槽液中处理及温水清洗流程,扩孔过程中,通过控制电源频率,获得均匀残芯层腐蚀形貌。
申请人又一声明,本发明通过上述实施例来说明本发明的实现方法及装置结构,但本发明并不局限于上述实施方式,即不意味着本发明必须依赖上述方法及结构才能实施。所属技术领域的技术人员应该明了,对本发明的任何改进,对本发明所选用实现方法等效替换及步骤的添加、具体方式的选择等,均落在本发明的保护范围和公开的范围之内。
本发明并不限于上述实施方式,凡采用和本发明相似结构及其方法来实现本发明目的的所有方式,均在本发明的保护范围之内。
Claims (1)
- 一种低接触电阻低压铝电解电容器用电极箔腐蚀方法,其特征在于:包括以下步骤:(a)采用0.01~5wt%的氢氧化钠溶液,在20~60℃温度下浸泡电解电容器低压阳极箔0.5~3分钟;(b)步骤(a)得到的阳极箔采用6~12wt%盐酸、0.05~1wt%硫酸,在温度为5~50℃、电流密度为0.1~1A/cm 2条件下作用10~85秒;(c)步骤(b)得到的阳极箔采用6~12wt%盐酸、0.05~1wt%硫酸,在温度为5~50℃条件下作用10~85秒;(d)步骤(c)得到的阳极箔采用温度为40~60℃的自来水清洗10~85秒;(e)重复步骤(b)、(c、)、(d)4次;(f)步骤(e)处理得到的阳极箔在6~12wt%盐酸、0.05~1wt%硫酸、0.01~1wt%磷酸腐蚀液中进行扩孔腐蚀,电流密度为0.1~1A/cm 2,温度为10~45℃,按正弦波变化的5~35Hz电源频率进行低频腐蚀10~85秒;(g)步骤(f)处理得到的阳极箔采用6~12wt%盐酸、0.05~1wt%硫酸、0.01~1wt%磷酸,在温度为10~45℃条件下作用10~85秒;(h)步骤(g)得到的阳极箔采用温度为40~60℃的自来水清洗10~85秒;(i)重复步骤(f)、(g)、(h)8次;(j)采用2~6wt%的盐酸溶液,温度为20~80℃下浸泡30~180秒;(k)采用0.1~4wt%的硝酸溶液,温度为20~80℃下浸泡30~180秒;(l)采用纯水清洗30~180秒后,在400~460℃温度下退火处理20~180秒。
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