WO2018099333A1 - 一种纳米镀膜设备旋转货架装置 - Google Patents

一种纳米镀膜设备旋转货架装置 Download PDF

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WO2018099333A1
WO2018099333A1 PCT/CN2017/112929 CN2017112929W WO2018099333A1 WO 2018099333 A1 WO2018099333 A1 WO 2018099333A1 CN 2017112929 W CN2017112929 W CN 2017112929W WO 2018099333 A1 WO2018099333 A1 WO 2018099333A1
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Prior art keywords
rotating
reaction chamber
coating device
rotating shelf
hollow tube
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PCT/CN2017/112929
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English (en)
French (fr)
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宗坚
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江苏菲沃泰纳米科技有限公司
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Publication of WO2018099333A1 publication Critical patent/WO2018099333A1/zh
Priority to US16/427,199 priority Critical patent/US11332829B2/en
Priority to US17/662,611 priority patent/US20220259728A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

  • the rotating shelf comprises 1 to 20 layers of a material, which is made of aluminum alloy or stainless steel.
  • the vacuum pump has a power of 3-50 KW and a pumping speed of 600-1200 m 3 /h.
  • the chemical monomer gas entering the chamber can be formed to spread along the radial direction of each shelf to the position of the through hole, so that the cavity wall to the hollow
  • the tube area chemical monomer density is more uniform.
  • a rotating coating device for a nano coating device comprising: a reaction chamber, a volume of the reaction chamber is 50L, a rotating shelf is arranged in the reaction chamber, and the rotating shelf comprises a layer a storage layer, the central axis of the rotating shelf is a hollow tube structure, and the hollow tube is provided with a through hole, the reaction chamber The top of the chamber is provided with an air suction port, and the air suction port is located on the same axis and above the hollow tube.
  • a rotating coating device for a nano coating device comprising: a reaction chamber, a volume of a reaction chamber of 500 L, a rotating shelf in the reaction chamber, and a rotating shelf comprising 10 layers.
  • the central axis of the rotating shelf is a hollow tube structure, and the hollow tube is provided with a through hole, and the top of the reaction chamber is provided with an air suction port, and the air suction port is located on the same axis and above the hollow tube.
  • the air suction port is provided with a guiding sleeve, and the inner diameter of the guiding sleeve is larger than the outer diameter of the hollow tube, the hollow tube can be inserted into the air guiding port guiding sleeve and rotated relative to the air suction port, and the inner ring gear is mounted on the bottom disc of the rotating shelf, the rotating motor shaft Mounting gears, the power of the rotating motor is 1500W, and the gears are driven by the gears to drive the shelves at the bottom of the rack.
  • the workpiece is placed on the storage layer of the rotating shelf, and the vacuum pump is connected to the cavity suction port through the vacuum pipe.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

一种纳米镀膜设备旋转货架装置，该装置中，包括反应腔室(1)，所述反应腔室(1)内设置有旋转货架(2)，所述旋转货架(2)的中心轴为中空管结构，且中空管上设置有通孔，反应腔室(1)顶部安装有抽气口，抽气口与中空管在同一轴线上且位于其上方，所述旋转货架(2)底部圆盘上安装内齿圈，旋转电机轴上安装齿轮，工件(8)放置在旋转货架(2)的置物层上。

Description

一种纳米镀膜设备旋转货架装置 技术领域
[0001] 本发明属于真空镀膜技术领域， 特别涉及一种纳米镀膜设备旋转货架装置。
背景技术
[0002] 等离子镀膜作为提升材料表面性能有效方法被广泛应用于航空航天、 汽车制造 、 机械重工和五金工具制造等领域。 在等离子镀膜过程中， 需要将镀膜设备腔 室内空气抽出维持低压力状态， 同吋需要通入工艺气体和化学单体气体用于反 应生成聚合物涂层。 由于整个等离子镀膜过程中需要持续抽气， 且抽气口、 进 气口、 加料口位置是固定的， 因此化学单体气体有向抽气口方向扩散的趋势， 导致化学单体气体在加料口区域和扩散方向区域的密度相对较大。 这就出现了 这些区域放置的被镀膜工件表面聚合物涂层厚度较厚而其他区域涂层厚度较薄 现象， 造成批量生产的质量不一致。
技术问题
[0003] 本发明的目的是克服上述不足， 提供一种纳米镀膜设备旋转货架装置。
问题的解决方案
技术解决方案
[0004] 本发明为实现上述目的所采用的技术方案如下：
[0005] 一种纳米镀膜设备旋转货架装置， 其特征在于： 包括反应腔室， 所述反应腔室 内设置有旋转货架， 所述旋转货架的中心轴为中空管结构， 且中空管上设置有 通孔， 反应腔室顶部安装有抽气口， 抽气口与中空管在同一轴线上且位于其上 方， 抽气口安装有导向套， 且导向套内径比中空管外径大， 中空管可插入抽气 口导向套并相对抽气口转动。 所述旋转货架底部圆盘上安装内齿圈， 旋转电机 轴上安装齿轮， 齿轮与内齿圈啮合， 通过齿轮带动货架底部圆盘齿圈使货架转 动， 工件放置在旋转货架的置物层上， 真空泵通过真空管路与腔体抽气口连接 ， 进气阀通过进气管路与腔体进气口连接， 加料阀通过加料管路与腔体加料口 连接， 射频电源通过导线与腔体内电极连接。 [0006] 所述反应腔室的腔容积为 50L~3000L， 材质为铝合金或不锈钢。
[0007] 所述旋转货架包括 1~20层置物层， 材质为铝合金或不锈钢。
[0008] 所述真空泵的功率为 3-50KW, 抽速为 600-1200m3/h。
[0009] 所述旋转电机的的功率为 30-3000W。
[0010] 所述射频电源的功率为 50-1500W。
发明的有益效果
有益效果
[0011] 本发明的上述技术方案与现有技术相比具有以下优点：
[0012] (1) 镀膜过程中货架持续旋转， 避免出现因各区域化学单体气体密度不均匀 造成固定区域的工件涂层厚度不均匀现象。 同吋， 货架转动也有利于将进入腔 室内的化学单体气体充分混合均匀。
[0013] (2) 通过每层货架对应中空管上的通孔， 可以使进入腔室内的化学单体气体 形成沿每层货架径向往通孔位置扩散的趋势， 使得从腔壁到中空管区域化学单 体密度更加均匀。
对附图的简要说明
附图说明
[0014] 图 1为一种纳米镀膜设备旋转货架装置结构示意图
[0015] 图中： 1、 反应腔室， 2、 旋转货架， 3、 真空泵， 4、 进气阀， 5、 加料阀， 6、 旋转电机， 7、 射频电源， 8、 工件。
本发明的实施方式
[0016] 下面结合附图和具体实施例详细说明本发明， 但本发明并不局限于具体实施例 [0017] 实施例 1
[0018] 如图 1所示： 一种纳米镀膜设备旋转货架装置， 其特征在于： 包括反应腔室， 反应腔室的容积为 50L， 所述反应腔室内设置有旋转货架， 旋转货架包括 1层置 物层， 所述旋转货架的中心轴为中空管结构， 且中空管上设置有通孔， 反应腔 室顶部安装有抽气口， 抽气口与中空管在同一轴线上且位于其上方， 抽气口安 装有导向套， 且导向套内径比中空管外径大， 中空管可插入抽气口导向套并相 对抽气口转动， 所述旋转货架底部圆盘上安装内齿圈， 旋转电机轴上安装齿轮
， 旋转电机的功率为 30W， 通过齿轮带动货架底部圆盘齿圈使货架转动， 工件放 置在旋转货架的置物层上， 真空泵通过真空管路与腔体抽气口连接， 真空泵的 功率为 3KW， 抽速为 600m3/h， 进气阀通过进气管路与腔体进气口连接， 加料阀 通过加料管路与腔体加料口连接， 射频电源通过导线与腔体内电极连接， 射频 电源的功率为 50W。
[0019] 实施例 2
[0020] 如图 1所示： 一种纳米镀膜设备旋转货架装置， 其特征在于： 包括反应腔室， 反应腔室的容积为 500L， 所述反应腔室内设置有旋转货架， 旋转货架包括 10层 置物层， 所述旋转货架的中心轴为中空管结构， 且中空管上设置有通孔， 反应 腔室顶部安装有抽气口， 抽气口与中空管在同一轴线上且位于其上方， 抽气口 安装有导向套， 且导向套内径比中空管外径大， 中空管可插入抽气口导向套并 相对抽气口转动， 所述旋转货架底部圆盘上安装内齿圈， 旋转电机轴上安装齿 轮， 旋转电机的的功率为 300W， 通过齿轮带动货架底部圆盘齿圈使货架转动， 工件放置在旋转货架的置物层上， 真空泵通过真空管路与腔体抽气口连接， 真 空泵的功率为 12KW， 抽速为 800m3/h， 进气阀通过进气管路与腔体进气口连接 ， 加料阀通过加料管路与腔体加料口连接， 射频电源通过导线与腔体内电极连 接， 射频电源的功率为 300W。
[0021] 实施例 3
[0022] 如图 1所示： 一种纳米镀膜设备旋转货架装置， 其特征在于： 包括反应腔室， 反应腔室的容积为 1800L, 所述反应腔室内设置有旋转货架， 旋转货架包括 15层 置物层， 所述旋转货架的中心轴为中空管结构， 且中空管上设置有通孔， 反应 腔室顶部安装有抽气口， 抽气口与中空管在同一轴线上且位于其上方， 抽气口 安装有导向套， 且导向套内径比中空管外径大， 中空管可插入抽气口导向套并 相对抽气口转动， 所述旋转货架底部圆盘上安装内齿圈， 旋转电机轴上安装齿 轮， 旋转电机的的功率为 1500W, 通过齿轮带动货架底部圆盘齿圈使货架转动， 工件放置在旋转货架的置物层上， 真空泵通过真空管路与腔体抽气口连接， 真 空泵的功率为 30KW, 抽速为 1100m3/h， 进气阀通过进气管路与腔体进气口连接 ， 加料阀通过加料管路与腔体加料口连接， 射频电源通过导线与腔体内电极连 接， 射频电源的功率为 1000W。
[0023] 工件制作流程如下： 首先将镀膜工件放置于镀膜设备腔室内的旋转货架的置物 层上， 真空泵从抽气口将腔室内空气抽出使腔室内压力降低， 然后通过进气阀 从进气口向腔室内通入工艺气体， 再通过加料阀从加料口向腔室内添加化学单 体气体， 旋转电机带动货架旋转,由射频电源放电， 引发化学单体气体发生聚合 并沉积在工件表面形成聚合物涂层。
[0024] 实施例 4
[0025] 如图 1所示： 一种纳米镀膜设备旋转货架装置， 其特征在于： 包括反应腔室， 反应腔室的容积为 3000L, 所述反应腔室内设置有旋转货架， 旋转货架包括 20层 置物层， 所述旋转货架的中心轴为中空管结构， 且中空管上设置有通孔， 反应 腔室顶部安装有抽气口， 抽气口与中空管在同一轴线上且位于其上方， 抽气口 安装有导向套， 且导向套内径比中空管外径大， 中空管可插入抽气口导向套并 相对抽气口转动， 所述旋转货架底部圆盘上安装内齿圈， 旋转电机轴上安装齿 轮， 旋转电机的的功率为 3000W, 通过齿轮带动货架底部圆盘齿圈使货架转动， 工件放置在旋转货架的置物层上， 真空泵通过真空管路与腔体抽气口连接， 真 空泵的功率为 50KW， 抽速为 1200m3/h， 进气阀通过进气管路与腔体进气口连接 ， 加料阀通过加料管路与腔体加料口连接， 射频电源通过导线与腔体内电极连 接， 射频电源的功率为 1500W。

Claims

权利要求书
[权利要求 1] 一种纳米镀膜设备旋转货架装置， 其特征在于： 包括反应腔室 （1) ， 所述反应腔室 （1) 内设置有旋转货架 （2) ， 所述旋转货架 （2) 的中心轴为中空管结构， 且中空管上设置有通孔， 反应腔室顶部安装 有抽气口， 抽气口与中空管在同一轴线上且位于其上方， 抽气口安装 有导向套， 且导向套内径比中空管外径大， 所述旋转货架 （2) 底部 圆盘上安装内齿圈， 旋转电机 （6) 轴上安装齿轮， 工件 （8) 放置在 旋转货架 （2) 的置物层上， 真空泵 （3) 通过真空管路与反应腔室 （ 1) 腔体抽气口连接， 进气阀 （4) 通过进气管路与反应腔室 （1) 腔 体进气口连接， 加料阀 （5) 通过加料管路与反应腔室 （1) 腔体加料 口连接， 射频电源 （7) 通过导线与反应腔室 （1) 腔体内电极连接。
[权利要求 2] 根据权利要求 1所述的一种纳米镀膜设备旋转货架装置， 其特征在于 ： 所述反应腔室 （1) 的腔容积为 50L~3000L， 材质为铝合金或不锈
[权利要求 3] 根据权利要求 1所述的一种纳米镀膜设备旋转货架装置， 其特征在于 ： 所述旋转货架 （2) 包括 1~20层置物层， 材质为铝合金或不锈钢。
[权利要求 4] 根据权利要求 1所述的一种纳米镀膜设备旋转货架装置， 其特征在于 ： 所述真空泵 （3) 的功率为 3-50KW, 抽速为 600-1200m3/h。
[权利要求 5] 根据权利要求 1所述的一种纳米镀膜设备旋转货架装置， 其特征在于 ： 所述旋转电机 （6) 的功率为 30-3000W。
[权利要求 6] 根据权利要求 1所述的一种纳米镀膜设备旋转货架装置， 其特征在于 ： 所述射频电源 （7) 的功率为 50-1500W。
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