WO2018016614A1 - 化合物、樹脂、組成物及びパターン形成方法 - Google Patents
化合物、樹脂、組成物及びパターン形成方法 Download PDFInfo
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- WO2018016614A1 WO2018016614A1 PCT/JP2017/026412 JP2017026412W WO2018016614A1 WO 2018016614 A1 WO2018016614 A1 WO 2018016614A1 JP 2017026412 W JP2017026412 W JP 2017026412W WO 2018016614 A1 WO2018016614 A1 WO 2018016614A1
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 397
- 239000000203 mixture Substances 0.000 title claims description 195
- 239000011347 resin Substances 0.000 title claims description 194
- 229920005989 resin Polymers 0.000 title claims description 194
- 238000000034 method Methods 0.000 title claims description 165
- -1 acryloxy Chemical group 0.000 claims description 190
- 125000004432 carbon atom Chemical group C* 0.000 claims description 175
- 239000002904 solvent Substances 0.000 claims description 125
- 239000000463 material Substances 0.000 claims description 93
- 238000005530 etching Methods 0.000 claims description 91
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 71
- 239000002253 acid Substances 0.000 claims description 59
- 125000003118 aryl group Chemical group 0.000 claims description 57
- 150000002576 ketones Chemical class 0.000 claims description 57
- 230000005855 radiation Effects 0.000 claims description 52
- 125000001424 substituent group Chemical group 0.000 claims description 51
- 229920002120 photoresistant polymer Polymers 0.000 claims description 48
- 238000001459 lithography Methods 0.000 claims description 46
- 125000000217 alkyl group Chemical group 0.000 claims description 44
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 42
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 39
- 238000004132 cross linking Methods 0.000 claims description 38
- 125000003342 alkenyl group Chemical group 0.000 claims description 37
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 36
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 33
- 238000011161 development Methods 0.000 claims description 33
- 239000003431 cross linking reagent Substances 0.000 claims description 32
- 239000000178 monomer Substances 0.000 claims description 31
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 30
- 125000003545 alkoxy group Chemical group 0.000 claims description 29
- 125000005843 halogen group Chemical group 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 25
- 150000002989 phenols Chemical class 0.000 claims description 24
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 22
- 125000003277 amino group Chemical group 0.000 claims description 22
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 21
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- 239000007870 radical polymerization initiator Substances 0.000 claims description 15
- 125000002947 alkylene group Chemical group 0.000 claims description 13
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 13
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 12
- 125000003107 substituted aryl group Chemical group 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- 125000004434 sulfur atom Chemical group 0.000 claims description 11
- 150000002170 ethers Chemical class 0.000 claims description 10
- 125000005017 substituted alkenyl group Chemical group 0.000 claims description 10
- 125000005415 substituted alkoxy group Chemical group 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 239000002841 Lewis acid Substances 0.000 claims description 7
- 150000007517 lewis acids Chemical class 0.000 claims description 7
- 125000005429 oxyalkyl group Chemical group 0.000 claims description 7
- 125000005336 allyloxy group Chemical group 0.000 claims description 6
- 125000000732 arylene group Chemical group 0.000 claims description 6
- 125000005156 substituted alkylene group Chemical group 0.000 claims description 6
- 125000005649 substituted arylene group Chemical group 0.000 claims description 6
- 239000004593 Epoxy Chemical class 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 5
- 150000001721 carbon Chemical class 0.000 claims description 5
- 150000001913 cyanates Chemical class 0.000 claims description 5
- 150000002460 imidazoles Chemical class 0.000 claims description 5
- 239000003999 initiator Substances 0.000 claims description 5
- 239000012948 isocyanate Substances 0.000 claims description 5
- 150000003003 phosphines Chemical class 0.000 claims description 5
- 239000003505 polymerization initiator Substances 0.000 claims description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 5
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical class NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 claims description 3
- 239000007869 azo polymerization initiator Substances 0.000 claims description 3
- 150000005130 benzoxazines Chemical class 0.000 claims description 3
- 150000007974 melamines Chemical class 0.000 claims description 3
- 150000001451 organic peroxides Chemical class 0.000 claims description 3
- 150000003672 ureas Chemical class 0.000 claims description 3
- 125000001046 glycoluril group Chemical class [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 claims 1
- 239000010408 film Substances 0.000 description 262
- 239000010410 layer Substances 0.000 description 187
- 0 CC1(C)/C=C/[C@@](C)(C(Cc2ccc3)([C@]4(C)/C=C/[C@](C)(*5)C=C[C@](C)(*)C=C4)c4c2c3ccc4)C=C[C@@]5(C)C=C1 Chemical compound CC1(C)/C=C/[C@@](C)(C(Cc2ccc3)([C@]4(C)/C=C/[C@](C)(*5)C=C[C@](C)(*)C=C4)c4c2c3ccc4)C=C[C@@]5(C)C=C1 0.000 description 166
- 238000006243 chemical reaction Methods 0.000 description 133
- 230000015572 biosynthetic process Effects 0.000 description 101
- 239000000243 solution Substances 0.000 description 98
- 238000003786 synthesis reaction Methods 0.000 description 87
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 75
- 239000007787 solid Substances 0.000 description 52
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 48
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 48
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 47
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 46
- 239000003960 organic solvent Substances 0.000 description 45
- 239000007789 gas Substances 0.000 description 44
- 230000008569 process Effects 0.000 description 41
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 38
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 38
- 239000002994 raw material Substances 0.000 description 38
- 150000001299 aldehydes Chemical class 0.000 description 37
- 238000005160 1H NMR spectroscopy Methods 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 33
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 32
- 230000018109 developmental process Effects 0.000 description 32
- 238000004090 dissolution Methods 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 239000007864 aqueous solution Substances 0.000 description 31
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 30
- 239000000126 substance Substances 0.000 description 29
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 28
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 27
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 26
- 239000003054 catalyst Substances 0.000 description 25
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 24
- 238000000746 purification Methods 0.000 description 23
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 23
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 22
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 22
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 21
- 239000003377 acid catalyst Substances 0.000 description 21
- 125000002723 alicyclic group Chemical group 0.000 description 21
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 21
- 229920003986 novolac Polymers 0.000 description 21
- 238000004528 spin coating Methods 0.000 description 21
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 20
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 19
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 19
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 19
- 235000019441 ethanol Nutrition 0.000 description 19
- 235000013824 polyphenols Nutrition 0.000 description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 239000002585 base Substances 0.000 description 18
- 238000002156 mixing Methods 0.000 description 18
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 18
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N DMSO Substances CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 17
- 150000002430 hydrocarbons Chemical group 0.000 description 17
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 16
- 230000000694 effects Effects 0.000 description 16
- 238000001914 filtration Methods 0.000 description 16
- HYBBIBNJHNGZAN-UHFFFAOYSA-N furfural Chemical compound O=CC1=CC=CO1 HYBBIBNJHNGZAN-UHFFFAOYSA-N 0.000 description 16
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 16
- 239000007788 liquid Substances 0.000 description 16
- 230000009257 reactivity Effects 0.000 description 16
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 15
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 15
- 230000002378 acidificating effect Effects 0.000 description 15
- 238000011156 evaluation Methods 0.000 description 15
- 238000000605 extraction Methods 0.000 description 15
- 230000009477 glass transition Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000000926 separation method Methods 0.000 description 15
- 239000004094 surface-active agent Substances 0.000 description 15
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 14
- 125000001624 naphthyl group Chemical group 0.000 description 14
- 150000007524 organic acids Chemical class 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 13
- 238000006482 condensation reaction Methods 0.000 description 13
- 230000007547 defect Effects 0.000 description 13
- 229940116333 ethyl lactate Drugs 0.000 description 13
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 13
- ZCMGOWWHLJVFTO-UHFFFAOYSA-N (1-benzoylnaphthalen-2-yl)-phenylmethanone Chemical compound C=1C=C2C=CC=CC2=C(C(=O)C=2C=CC=CC=2)C=1C(=O)C1=CC=CC=C1 ZCMGOWWHLJVFTO-UHFFFAOYSA-N 0.000 description 12
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 12
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 12
- MLNFAVZUSGIURZ-UHFFFAOYSA-N [4-(4-benzoylphenyl)phenyl]-phenylmethanone Chemical group C=1C=C(C=2C=CC(=CC=2)C(=O)C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 MLNFAVZUSGIURZ-UHFFFAOYSA-N 0.000 description 12
- 239000003513 alkali Substances 0.000 description 12
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 125000006165 cyclic alkyl group Chemical group 0.000 description 12
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 12
- 239000012153 distilled water Substances 0.000 description 12
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 125000005641 methacryl group Chemical group 0.000 description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 12
- ZBVQEUUTPTVMHY-UHFFFAOYSA-N phenyl-(2-phenylphenyl)methanone Chemical group C=1C=CC=C(C=2C=CC=CC=2)C=1C(=O)C1=CC=CC=C1 ZBVQEUUTPTVMHY-UHFFFAOYSA-N 0.000 description 12
- DTUQWGWMVIHBKE-UHFFFAOYSA-N phenylacetaldehyde Chemical compound O=CCC1=CC=CC=C1 DTUQWGWMVIHBKE-UHFFFAOYSA-N 0.000 description 12
- 230000009467 reduction Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 11
- BHELZAPQIKSEDF-UHFFFAOYSA-N allyl bromide Chemical compound BrCC=C BHELZAPQIKSEDF-UHFFFAOYSA-N 0.000 description 11
- 125000005577 anthracene group Chemical group 0.000 description 11
- 239000004305 biphenyl Substances 0.000 description 11
- 235000010290 biphenyl Nutrition 0.000 description 11
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 11
- 239000007810 chemical reaction solvent Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 11
- 238000004440 column chromatography Methods 0.000 description 11
- 125000003824 heptacenyl group Chemical group C1(=CC=CC2=CC3=CC4=CC5=CC6=CC7=CC=CC=C7C=C6C=C5C=C4C=C3C=C12)* 0.000 description 11
- 229910052740 iodine Inorganic materials 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 238000010992 reflux Methods 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 11
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 11
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 10
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 10
- VIRWKAJWTKAIMA-UHFFFAOYSA-N 2-chloroethyl acetate Chemical compound CC(=O)OCCCl VIRWKAJWTKAIMA-UHFFFAOYSA-N 0.000 description 10
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 10
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 10
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 10
- 239000008346 aqueous phase Substances 0.000 description 10
- 229910052801 chlorine Inorganic materials 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 10
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 10
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 10
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 10
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 10
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 10
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 10
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 10
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 9
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 9
- 125000001309 chloro group Chemical group Cl* 0.000 description 9
- 239000000470 constituent Substances 0.000 description 9
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 9
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 9
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 9
- 125000001802 myricyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 9
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 9
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 9
- 235000005985 organic acids Nutrition 0.000 description 9
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 9
- 239000012071 phase Substances 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 229910000027 potassium carbonate Inorganic materials 0.000 description 9
- 235000011181 potassium carbonates Nutrition 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 8
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 8
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 8
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 8
- FPYUJUBAXZAQNL-UHFFFAOYSA-N 2-chlorobenzaldehyde Chemical compound ClC1=CC=CC=C1C=O FPYUJUBAXZAQNL-UHFFFAOYSA-N 0.000 description 8
- NTWBHJYRDKBGBR-UHFFFAOYSA-N 2-ethylbenzaldehyde Chemical compound CCC1=CC=CC=C1C=O NTWBHJYRDKBGBR-UHFFFAOYSA-N 0.000 description 8
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 description 8
- LCRCBXLHWTVPEQ-UHFFFAOYSA-N 2-phenylbenzaldehyde Chemical compound O=CC1=CC=CC=C1C1=CC=CC=C1 LCRCBXLHWTVPEQ-UHFFFAOYSA-N 0.000 description 8
- ARIREUPIXAKDAY-UHFFFAOYSA-N 4-butylbenzaldehyde Chemical compound CCCCC1=CC=C(C=O)C=C1 ARIREUPIXAKDAY-UHFFFAOYSA-N 0.000 description 8
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 8
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical class CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 8
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 8
- 229910052783 alkali metal Inorganic materials 0.000 description 8
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 8
- XJDFBLQCLSBCGQ-UHFFFAOYSA-N anthracene-1-carbaldehyde Chemical compound C1=CC=C2C=C3C(C=O)=CC=CC3=CC2=C1 XJDFBLQCLSBCGQ-UHFFFAOYSA-N 0.000 description 8
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 8
- 239000003153 chemical reaction reagent Substances 0.000 description 8
- 229960004106 citric acid Drugs 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 8
- 238000007334 copolymerization reaction Methods 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 125000004122 cyclic group Chemical group 0.000 description 8
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 8
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 8
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 8
- 125000006547 cyclononyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 8
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 8
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 8
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 8
- 125000001153 fluoro group Chemical group F* 0.000 description 8
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 8
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 8
- 150000007522 mineralic acids Chemical class 0.000 description 8
- 150000004002 naphthaldehydes Chemical class 0.000 description 8
- 150000004780 naphthols Chemical class 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- BTFQKIATRPGRBS-UHFFFAOYSA-N o-tolualdehyde Chemical compound CC1=CC=CC=C1C=O BTFQKIATRPGRBS-UHFFFAOYSA-N 0.000 description 8
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 8
- RGHWXPPXQQVOKA-UHFFFAOYSA-N phenanthrene-1-carbaldehyde Chemical compound C1=CC2=CC=CC=C2C2=C1C(C=O)=CC=C2 RGHWXPPXQQVOKA-UHFFFAOYSA-N 0.000 description 8
- 238000006068 polycondensation reaction Methods 0.000 description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 8
- RCYFOPUXRMOLQM-UHFFFAOYSA-N pyrene-1-carbaldehyde Chemical compound C1=C2C(C=O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 RCYFOPUXRMOLQM-UHFFFAOYSA-N 0.000 description 8
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 8
- 238000005979 thermal decomposition reaction Methods 0.000 description 8
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 8
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 7
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 7
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 7
- 150000007514 bases Chemical class 0.000 description 7
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000004040 coloring Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 239000003759 ester based solvent Substances 0.000 description 7
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 7
- 235000006408 oxalic acid Nutrition 0.000 description 7
- 229940116315 oxalic acid Drugs 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000011973 solid acid Substances 0.000 description 7
- 239000008096 xylene Substances 0.000 description 7
- HZNCYWPTOJMMPQ-UHFFFAOYSA-N (2,3-dibenzoylphenyl)-phenylmethanone Chemical compound C=1C=CC(C(=O)C=2C=CC=CC=2)=C(C(=O)C=2C=CC=CC=2)C=1C(=O)C1=CC=CC=C1 HZNCYWPTOJMMPQ-UHFFFAOYSA-N 0.000 description 6
- OJLABXSUFRIXFL-UHFFFAOYSA-N (2-benzoylphenyl)-phenylmethanone Chemical compound C=1C=CC=C(C(=O)C=2C=CC=CC=2)C=1C(=O)C1=CC=CC=C1 OJLABXSUFRIXFL-UHFFFAOYSA-N 0.000 description 6
- MKOIQZIVZSVNPT-UHFFFAOYSA-N 1-(2,3-diacetylphenyl)ethanone Chemical compound CC(=O)C1=CC=CC(C(C)=O)=C1C(C)=O MKOIQZIVZSVNPT-UHFFFAOYSA-N 0.000 description 6
- LVQFKRXRTXCQCZ-UHFFFAOYSA-N 1-(2-acetylphenyl)ethanone Chemical compound CC(=O)C1=CC=CC=C1C(C)=O LVQFKRXRTXCQCZ-UHFFFAOYSA-N 0.000 description 6
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 6
- XSAYZAUNJMRRIR-UHFFFAOYSA-N 2-acetylnaphthalene Chemical compound C1=CC=CC2=CC(C(=O)C)=CC=C21 XSAYZAUNJMRRIR-UHFFFAOYSA-N 0.000 description 6
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 6
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 6
- YGCZTXZTJXYWCO-UHFFFAOYSA-N 3-phenylpropanal Chemical compound O=CCCC1=CC=CC=C1 YGCZTXZTJXYWCO-UHFFFAOYSA-N 0.000 description 6
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 6
- 101710115177 Luminal-binding protein 1 Proteins 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 6
- 239000005456 alcohol based solvent Substances 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 6
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 6
- 239000012965 benzophenone Substances 0.000 description 6
- 125000006267 biphenyl group Chemical group 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 6
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 6
- 239000005453 ketone based solvent Substances 0.000 description 6
- 125000005395 methacrylic acid group Chemical group 0.000 description 6
- 229940098779 methanesulfonic acid Drugs 0.000 description 6
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 6
- CXAYOCVHDCXPAI-UHFFFAOYSA-N naphthalen-1-yl(phenyl)methanone Chemical compound C=1C=CC2=CC=CC=C2C=1C(=O)C1=CC=CC=C1 CXAYOCVHDCXPAI-UHFFFAOYSA-N 0.000 description 6
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 6
- VKCYHJWLYTUGCC-UHFFFAOYSA-N nonan-2-one Chemical compound CCCCCCCC(C)=O VKCYHJWLYTUGCC-UHFFFAOYSA-N 0.000 description 6
- 229940100595 phenylacetaldehyde Drugs 0.000 description 6
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 5
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 5
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 5
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 5
- 229930185605 Bisphenol Natural products 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 5
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 5
- 125000004054 acenaphthylenyl group Chemical class C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 150000001408 amides Chemical class 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229950011260 betanaphthol Drugs 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 239000001530 fumaric acid Substances 0.000 description 5
- 125000005842 heteroatom Chemical group 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 5
- 239000011976 maleic acid Substances 0.000 description 5
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 5
- 239000002736 nonionic surfactant Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 5
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 5
- 125000001725 pyrenyl group Chemical group 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 229960001755 resorcinol Drugs 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229960001367 tartaric acid Drugs 0.000 description 5
- 239000011975 tartaric acid Substances 0.000 description 5
- 235000002906 tartaric acid Nutrition 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- GRWFGVWFFZKLTI-IUCAKERBSA-N (-)-α-pinene Chemical compound CC1=CC[C@@H]2C(C)(C)[C@H]1C2 GRWFGVWFFZKLTI-IUCAKERBSA-N 0.000 description 4
- ZZXUZKXVROWEIF-UHFFFAOYSA-N 1,2-butylene carbonate Chemical compound CCC1COC(=O)O1 ZZXUZKXVROWEIF-UHFFFAOYSA-N 0.000 description 4
- SDDBCEWUYXVGCQ-UHFFFAOYSA-N 1,5-dimethylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1C SDDBCEWUYXVGCQ-UHFFFAOYSA-N 0.000 description 4
- MUVQKFGNPGZBII-UHFFFAOYSA-N 1-anthrol Chemical compound C1=CC=C2C=C3C(O)=CC=CC3=CC2=C1 MUVQKFGNPGZBII-UHFFFAOYSA-N 0.000 description 4
- KWRSKZMCJVFUGU-UHFFFAOYSA-N 1h-inden-1-ol Chemical compound C1=CC=C2C(O)C=CC2=C1 KWRSKZMCJVFUGU-UHFFFAOYSA-N 0.000 description 4
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 4
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 4
- RGHQKFQZGLKBCF-UHFFFAOYSA-N 2-bromoethyl acetate Chemical compound CC(=O)OCCBr RGHQKFQZGLKBCF-UHFFFAOYSA-N 0.000 description 4
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 4
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 4
- DYHCCCWROHIOFM-UHFFFAOYSA-N 2-iodoethyl acetate Chemical compound CC(=O)OCCI DYHCCCWROHIOFM-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- JBXIOAKUBCTDES-UHFFFAOYSA-N 2h-acenaphthylen-1-one Chemical compound C1=CC(C(=O)C2)=C3C2=CC=CC3=C1 JBXIOAKUBCTDES-UHFFFAOYSA-N 0.000 description 4
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 4
- UFERIGCCDYCZLN-UHFFFAOYSA-N 3a,4,7,7a-tetrahydro-1h-indene Chemical compound C1C=CCC2CC=CC21 UFERIGCCDYCZLN-UHFFFAOYSA-N 0.000 description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 4
- BBDKZWKEPDTENS-UHFFFAOYSA-N 4-Vinylcyclohexene Chemical compound C=CC1CCC=CC1 BBDKZWKEPDTENS-UHFFFAOYSA-N 0.000 description 4
- WOCGGVRGNIEDSZ-UHFFFAOYSA-N 4-[2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical compound C=1C=C(O)C(CC=C)=CC=1C(C)(C)C1=CC=C(O)C(CC=C)=C1 WOCGGVRGNIEDSZ-UHFFFAOYSA-N 0.000 description 4
- ISDBWOPVZKNQDW-UHFFFAOYSA-N 4-phenylbenzaldehyde Chemical compound C1=CC(C=O)=CC=C1C1=CC=CC=C1 ISDBWOPVZKNQDW-UHFFFAOYSA-N 0.000 description 4
- 229910015900 BF3 Inorganic materials 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 4
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 4
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229930040373 Paraformaldehyde Natural products 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 4
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- AFPRJLBZLPBTPZ-UHFFFAOYSA-N acenaphthoquinone Chemical compound C1=CC(C(C2=O)=O)=C3C2=CC=CC3=C1 AFPRJLBZLPBTPZ-UHFFFAOYSA-N 0.000 description 4
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 4
- VNACESCBYXLGBN-UHFFFAOYSA-N acetic acid;1-methoxypropan-2-yl acetate Chemical compound CC(O)=O.COCC(C)OC(C)=O VNACESCBYXLGBN-UHFFFAOYSA-N 0.000 description 4
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 description 4
- IYKFYARMMIESOX-SPJNRGJMSA-N adamantanone Chemical compound C([C@H](C1)C2)[C@H]3C[C@@H]1C(=O)[C@@H]2C3 IYKFYARMMIESOX-SPJNRGJMSA-N 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 4
- 150000004056 anthraquinones Chemical class 0.000 description 4
- 239000000010 aprotic solvent Substances 0.000 description 4
- RFRXIWQYSOIBDI-UHFFFAOYSA-N benzarone Chemical compound CCC=1OC2=CC=CC=C2C=1C(=O)C1=CC=C(O)C=C1 RFRXIWQYSOIBDI-UHFFFAOYSA-N 0.000 description 4
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 4
- 229940092714 benzenesulfonic acid Drugs 0.000 description 4
- WVXMLBXFHITUIT-UHFFFAOYSA-N benzo[a]fluoren-1-one Chemical compound C1=CC=CC2=CC3=C4C(=O)C=CC=C4C=CC3=C21 WVXMLBXFHITUIT-UHFFFAOYSA-N 0.000 description 4
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 4
- NMJJFJNHVMGPGM-UHFFFAOYSA-N butyl formate Chemical compound CCCCOC=O NMJJFJNHVMGPGM-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000004210 ether based solvent Substances 0.000 description 4
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 4
- 235000019253 formic acid Nutrition 0.000 description 4
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 4
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 4
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 4
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 4
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 4
- 229940087305 limonene Drugs 0.000 description 4
- 235000001510 limonene Nutrition 0.000 description 4
- 238000004895 liquid chromatography mass spectrometry Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- YZMHQCWXYHARLS-UHFFFAOYSA-N naphthalene-1,2-disulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC=C21 YZMHQCWXYHARLS-UHFFFAOYSA-N 0.000 description 4
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 4
- 238000006386 neutralization reaction Methods 0.000 description 4
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 4
- KPMKEVXVVHNIEY-UHFFFAOYSA-N norcamphor Chemical compound C1CC2C(=O)CC1C2 KPMKEVXVVHNIEY-UHFFFAOYSA-N 0.000 description 4
- 229920002866 paraformaldehyde Polymers 0.000 description 4
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 4
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 description 4
- 238000000016 photochemical curing Methods 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- CGFYHILWFSGVJS-UHFFFAOYSA-N silicic acid;trioxotungsten Chemical compound O[Si](O)(O)O.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 CGFYHILWFSGVJS-UHFFFAOYSA-N 0.000 description 4
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- MGSRCZKZVOBKFT-UHFFFAOYSA-N thymol Chemical compound CC(C)C1=CC=C(C)C=C1O MGSRCZKZVOBKFT-UHFFFAOYSA-N 0.000 description 4
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 4
- KQBSGRWMSNFIPG-UHFFFAOYSA-N trioxane Chemical compound C1COOOC1 KQBSGRWMSNFIPG-UHFFFAOYSA-N 0.000 description 4
- 239000011592 zinc chloride Substances 0.000 description 4
- 235000005074 zinc chloride Nutrition 0.000 description 4
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 3
- UUGLSEIATNSHRI-UHFFFAOYSA-N 1,3,4,6-tetrakis(hydroxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound OCN1C(=O)N(CO)C2C1N(CO)C(=O)N2CO UUGLSEIATNSHRI-UHFFFAOYSA-N 0.000 description 3
- QCZZSANNLWPGEA-UHFFFAOYSA-N 1-(4-phenylphenyl)ethanone Chemical group C1=CC(C(=O)C)=CC=C1C1=CC=CC=C1 QCZZSANNLWPGEA-UHFFFAOYSA-N 0.000 description 3
- DVWQNBIUTWDZMW-UHFFFAOYSA-N 1-naphthalen-1-ylnaphthalen-2-ol Chemical compound C1=CC=C2C(C3=C4C=CC=CC4=CC=C3O)=CC=CC2=C1 DVWQNBIUTWDZMW-UHFFFAOYSA-N 0.000 description 3
- KCKAGGPNSPNAOR-UHFFFAOYSA-N 2,3-dimethylnaphthalene-1-carbaldehyde Chemical compound C1=CC=C2C(C=O)=C(C)C(C)=CC2=C1 KCKAGGPNSPNAOR-UHFFFAOYSA-N 0.000 description 3
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 3
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 3
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 3
- QVIKUAVXSRNDPS-UHFFFAOYSA-N 2-methoxynaphthalen-1-ol Chemical compound C1=CC=CC2=C(O)C(OC)=CC=C21 QVIKUAVXSRNDPS-UHFFFAOYSA-N 0.000 description 3
- SRJCJJKWVSSELL-UHFFFAOYSA-N 2-methylnaphthalen-1-ol Chemical compound C1=CC=CC2=C(O)C(C)=CC=C21 SRJCJJKWVSSELL-UHFFFAOYSA-N 0.000 description 3
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 3
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 3
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 229920000877 Melamine resin Polymers 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- YGCOKJWKWLYHTG-UHFFFAOYSA-N [[4,6-bis[bis(hydroxymethyl)amino]-1,3,5-triazin-2-yl]-(hydroxymethyl)amino]methanol Chemical compound OCN(CO)C1=NC(N(CO)CO)=NC(N(CO)CO)=N1 YGCOKJWKWLYHTG-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 235000011054 acetic acid Nutrition 0.000 description 3
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 3
- 239000001361 adipic acid Substances 0.000 description 3
- 235000011037 adipic acid Nutrition 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229940072049 amyl acetate Drugs 0.000 description 3
- 239000002518 antifoaming agent Substances 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 3
- 239000004202 carbamide Substances 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 3
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 229960005215 dichloroacetic acid Drugs 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- 238000007429 general method Methods 0.000 description 3
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 3
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 229940035429 isobutyl alcohol Drugs 0.000 description 3
- 150000002513 isocyanates Chemical group 0.000 description 3
- 239000000314 lubricant Substances 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 235000010755 mineral Nutrition 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- GYHFUZHODSMOHU-UHFFFAOYSA-N nonanal Chemical compound CCCCCCCCC=O GYHFUZHODSMOHU-UHFFFAOYSA-N 0.000 description 3
- NUJGJRNETVAIRJ-UHFFFAOYSA-N octanal Chemical compound CCCCCCCC=O NUJGJRNETVAIRJ-UHFFFAOYSA-N 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000006864 oxidative decomposition reaction Methods 0.000 description 3
- QCCDLTOVEPVEJK-UHFFFAOYSA-N phenylacetone Chemical compound CC(=O)CC1=CC=CC=C1 QCCDLTOVEPVEJK-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 125000005270 trialkylamine group Chemical group 0.000 description 3
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 3
- WTARULDDTDQWMU-RKDXNWHRSA-N (+)-β-pinene Chemical compound C1[C@H]2C(C)(C)[C@@H]1CCC2=C WTARULDDTDQWMU-RKDXNWHRSA-N 0.000 description 2
- WTARULDDTDQWMU-IUCAKERBSA-N (-)-Nopinene Natural products C1[C@@H]2C(C)(C)[C@H]1CCC2=C WTARULDDTDQWMU-IUCAKERBSA-N 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 2
- WZKZYRSMAQLVTF-UHFFFAOYSA-N (2-butylphenyl)-phenyliodanium Chemical group C(CCC)C1=C(C=CC=C1)[I+]C1=CC=CC=C1 WZKZYRSMAQLVTF-UHFFFAOYSA-N 0.000 description 2
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 2
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1 -dodecene Chemical group CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 2
- AKTDWFLTNDPLCH-UHFFFAOYSA-N 1,1,3,3-tetrakis(hydroxymethyl)urea Chemical compound OCN(CO)C(=O)N(CO)CO AKTDWFLTNDPLCH-UHFFFAOYSA-N 0.000 description 2
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 2
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 2
- 229940105324 1,2-naphthoquinone Drugs 0.000 description 2
- ZGEGCLOFRBLKSE-UHFFFAOYSA-N 1-Heptene Chemical group CCCCCC=C ZGEGCLOFRBLKSE-UHFFFAOYSA-N 0.000 description 2
- WZZBNLYBHUDSHF-DHLKQENFSA-N 1-[(3s,4s)-4-[8-(2-chloro-4-pyrimidin-2-yloxyphenyl)-7-fluoro-2-methylimidazo[4,5-c]quinolin-1-yl]-3-fluoropiperidin-1-yl]-2-hydroxyethanone Chemical compound CC1=NC2=CN=C3C=C(F)C(C=4C(=CC(OC=5N=CC=CN=5)=CC=4)Cl)=CC3=C2N1[C@H]1CCN(C(=O)CO)C[C@@H]1F WZZBNLYBHUDSHF-DHLKQENFSA-N 0.000 description 2
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N 1-nonene Chemical group CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical group CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 2
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical group CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 2
- NBJKWEHXLWUBOS-UHFFFAOYSA-N 14h-phenanthro[9,10-b]chromene Chemical group C12=CC=CC=C2C2=CC=CC=C2C2=C1CC1=CC=CC=C1O2 NBJKWEHXLWUBOS-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- XRUGBBIQLIVCSI-UHFFFAOYSA-N 2,3,4-trimethylphenol Chemical compound CC1=CC=C(O)C(C)=C1C XRUGBBIQLIVCSI-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- XXKHDSGLCLCFSC-UHFFFAOYSA-N 2,3-diphenylphenol Chemical compound C=1C=CC=CC=1C=1C(O)=CC=CC=1C1=CC=CC=C1 XXKHDSGLCLCFSC-UHFFFAOYSA-N 0.000 description 2
- CPEXFJVZFNYXGU-UHFFFAOYSA-N 2,4,6-trihydroxybenzophenone Chemical compound OC1=CC(O)=CC(O)=C1C(=O)C1=CC=CC=C1 CPEXFJVZFNYXGU-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- QNVRIHYSUZMSGM-LURJTMIESA-N 2-Hexanol Natural products CCCC[C@H](C)O QNVRIHYSUZMSGM-LURJTMIESA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- LDLCZOVUSADOIV-UHFFFAOYSA-N 2-bromoethanol Chemical compound OCCBr LDLCZOVUSADOIV-UHFFFAOYSA-N 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 2
- SZIFAVKTNFCBPC-UHFFFAOYSA-N 2-chloroethanol Chemical compound OCCCl SZIFAVKTNFCBPC-UHFFFAOYSA-N 0.000 description 2
- SFNWXOPQLKYXHN-UHFFFAOYSA-N 2-cyclohexylbenzaldehyde Chemical compound O=CC1=CC=CC=C1C1CCCCC1 SFNWXOPQLKYXHN-UHFFFAOYSA-N 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
- XIQQUBSHAAOGSG-UHFFFAOYSA-N 2-hexylbenzaldehyde Chemical compound CCCCCCC1=CC=CC=C1C=O XIQQUBSHAAOGSG-UHFFFAOYSA-N 0.000 description 2
- ZTMADXFOCUXMJE-UHFFFAOYSA-N 2-methylbenzene-1,3-diol Chemical compound CC1=C(O)C=CC=C1O ZTMADXFOCUXMJE-UHFFFAOYSA-N 0.000 description 2
- LCHYEKKJCUJAKN-UHFFFAOYSA-N 2-propylphenol Chemical compound CCCC1=CC=CC=C1O LCHYEKKJCUJAKN-UHFFFAOYSA-N 0.000 description 2
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 description 2
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 2
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 2
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 2
- LBPVOEHZEWAJKQ-UHFFFAOYSA-N 3-[4-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 LBPVOEHZEWAJKQ-UHFFFAOYSA-N 0.000 description 2
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 2
- UCQABCHSIIXVOY-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 UCQABCHSIIXVOY-UHFFFAOYSA-N 0.000 description 2
- BJEMXPVDXFSROA-UHFFFAOYSA-N 3-butylbenzene-1,2-diol Chemical compound CCCCC1=CC=CC(O)=C1O BJEMXPVDXFSROA-UHFFFAOYSA-N 0.000 description 2
- OBJRCWDDODWYCJ-UHFFFAOYSA-N 3-ethenylbicyclo[2.2.1]hept-3-ene Chemical compound C1CC2CC(C=C)=C1C2 OBJRCWDDODWYCJ-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- MTMKZABGIQJAEX-UHFFFAOYSA-N 4,4'-sulfonylbis[2-(prop-2-en-1-yl)phenol] Chemical compound C1=C(CC=C)C(O)=CC=C1S(=O)(=O)C1=CC=C(O)C(CC=C)=C1 MTMKZABGIQJAEX-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 2
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 2
- INYHZQLKOKTDAI-UHFFFAOYSA-N 5-ethenylbicyclo[2.2.1]hept-2-ene Chemical compound C1C2C(C=C)CC1C=C2 INYHZQLKOKTDAI-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- OSDWBNJEKMUWAV-UHFFFAOYSA-N Allyl chloride Chemical compound ClCC=C OSDWBNJEKMUWAV-UHFFFAOYSA-N 0.000 description 2
- 102100033806 Alpha-protein kinase 3 Human genes 0.000 description 2
- 101710082399 Alpha-protein kinase 3 Proteins 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Chemical group CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 2
- DXVYLFHTJZWTRF-UHFFFAOYSA-N Ethyl isobutyl ketone Chemical compound CCC(=O)CC(C)C DXVYLFHTJZWTRF-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 2
- XYVQFUJDGOBPQI-UHFFFAOYSA-N Methyl-2-hydoxyisobutyric acid Chemical compound COC(=O)C(C)(C)O XYVQFUJDGOBPQI-UHFFFAOYSA-N 0.000 description 2
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- WTARULDDTDQWMU-UHFFFAOYSA-N Pseudopinene Natural products C1C2C(C)(C)C1CCC2=C WTARULDDTDQWMU-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- 229920000147 Styrene maleic anhydride Polymers 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 239000005844 Thymol Substances 0.000 description 2
- LEEBETSNAGEFCY-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 LEEBETSNAGEFCY-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- HFBMWMNUJJDEQZ-UHFFFAOYSA-N acryloyl chloride Chemical compound ClC(=O)C=C HFBMWMNUJJDEQZ-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- HFEHLDPGIKPNKL-UHFFFAOYSA-N allyl iodide Chemical compound ICC=C HFEHLDPGIKPNKL-UHFFFAOYSA-N 0.000 description 2
- XCPQUQHBVVXMRQ-UHFFFAOYSA-N alpha-Fenchene Natural products C1CC2C(=C)CC1C2(C)C XCPQUQHBVVXMRQ-UHFFFAOYSA-N 0.000 description 2
- MVNCAPSFBDBCGF-UHFFFAOYSA-N alpha-pinene Natural products CC1=CCC23C1CC2C3(C)C MVNCAPSFBDBCGF-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 229930006722 beta-pinene Natural products 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- IMHDGJOMLMDPJN-UHFFFAOYSA-N biphenyl-2,2'-diol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1O IMHDGJOMLMDPJN-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 2
- 239000001639 calcium acetate Substances 0.000 description 2
- 229960005147 calcium acetate Drugs 0.000 description 2
- 235000011092 calcium acetate Nutrition 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- SHQSVMDWKBRBGB-UHFFFAOYSA-N cyclobutanone Chemical compound O=C1CCC1 SHQSVMDWKBRBGB-UHFFFAOYSA-N 0.000 description 2
- 125000001047 cyclobutenyl group Chemical group C1(=CCC1)* 0.000 description 2
- UCIYGNATMHQYCT-OWOJBTEDSA-N cyclodecene Chemical group C1CCCC\C=C\CCC1 UCIYGNATMHQYCT-OWOJBTEDSA-N 0.000 description 2
- HYPABJGVBDSCIT-UPHRSURJSA-N cyclododecene Chemical group C1CCCCC\C=C/CCCC1 HYPABJGVBDSCIT-UPHRSURJSA-N 0.000 description 2
- 125000001162 cycloheptenyl group Chemical group C1(=CCCCCC1)* 0.000 description 2
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 2
- 125000004090 cyclononenyl group Chemical group C1(=CCCCCCCC1)* 0.000 description 2
- 125000000522 cyclooctenyl group Chemical group C1(=CCCCCCC1)* 0.000 description 2
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 2
- 125000000298 cyclopropenyl group Chemical group [H]C1=C([H])C1([H])* 0.000 description 2
- LGVKWDUKZVMZAX-UHFFFAOYSA-N cyclotriacontene Chemical group C1CCCCCCCCCCCCCCC=CCCCCCCCCCCCCC1 LGVKWDUKZVMZAX-UHFFFAOYSA-N 0.000 description 2
- GMUVJAZTJOCSND-OWOJBTEDSA-N cycloundecene Chemical group C1CCCC\C=C\CCCC1 GMUVJAZTJOCSND-OWOJBTEDSA-N 0.000 description 2
- 230000020176 deacylation Effects 0.000 description 2
- 238000005947 deacylation reaction Methods 0.000 description 2
- 238000010908 decantation Methods 0.000 description 2
- 238000006114 decarboxylation reaction Methods 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 229940069096 dodecene Drugs 0.000 description 2
- 238000006735 epoxidation reaction Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- LCWMKIHBLJLORW-UHFFFAOYSA-N gamma-carene Natural products C1CC(=C)CC2C(C)(C)C21 LCWMKIHBLJLORW-UHFFFAOYSA-N 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical class N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- ZOCHHNOQQHDWHG-UHFFFAOYSA-N hexan-3-ol Chemical compound CCCC(O)CC ZOCHHNOQQHDWHG-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- AOGQPLXWSUTHQB-UHFFFAOYSA-N hexyl acetate Chemical compound CCCCCCOC(C)=O AOGQPLXWSUTHQB-UHFFFAOYSA-N 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229940117955 isoamyl acetate Drugs 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
- 229940017219 methyl propionate Drugs 0.000 description 2
- ASHGTJPOSUFTGB-UHFFFAOYSA-N methyl resorcinol Natural products COC1=CC=CC(O)=C1 ASHGTJPOSUFTGB-UHFFFAOYSA-N 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- QYZFTMMPKCOTAN-UHFFFAOYSA-N n-[2-(2-hydroxyethylamino)ethyl]-2-[[1-[2-(2-hydroxyethylamino)ethylamino]-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound OCCNCCNC(=O)C(C)(C)N=NC(C)(C)C(=O)NCCNCCO QYZFTMMPKCOTAN-UHFFFAOYSA-N 0.000 description 2
- AFFLGGQVNFXPEV-UHFFFAOYSA-N n-decene Chemical group CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 description 2
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 2
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 2
- NMRPBPVERJPACX-UHFFFAOYSA-N octan-3-ol Chemical compound CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229940044654 phenolsulfonic acid Drugs 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 235000015497 potassium bicarbonate Nutrition 0.000 description 2
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 2
- 239000011736 potassium bicarbonate Substances 0.000 description 2
- RPDAUEIUDPHABB-UHFFFAOYSA-N potassium ethoxide Chemical compound [K+].CC[O-] RPDAUEIUDPHABB-UHFFFAOYSA-N 0.000 description 2
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 2
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 2
- BDAWXSQJJCIFIK-UHFFFAOYSA-N potassium methoxide Chemical compound [K+].[O-]C BDAWXSQJJCIFIK-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229940079877 pyrogallol Drugs 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- GRWFGVWFFZKLTI-UHFFFAOYSA-N rac-alpha-Pinene Natural products CC1=CCC2C(C)(C)C1C2 GRWFGVWFFZKLTI-UHFFFAOYSA-N 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 239000012487 rinsing solution Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000001632 sodium acetate Substances 0.000 description 2
- 235000017281 sodium acetate Nutrition 0.000 description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- 229960000790 thymol Drugs 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WMZHDICSCDKPFS-UHFFFAOYSA-N triacontene Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCC=C WMZHDICSCDKPFS-UHFFFAOYSA-N 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229930195735 unsaturated hydrocarbon Chemical group 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 2
- VMTBAKSMHFCUOH-UHFFFAOYSA-N (1-methoxy-3-oxobutylidene)-oxidooxidanium Chemical compound C(CC(=O)C)(=[O+][O-])OC VMTBAKSMHFCUOH-UHFFFAOYSA-N 0.000 description 1
- UYBDKTYLTZZVEB-UHFFFAOYSA-N (2,3,4,5,6-pentahydroxyphenyl)-phenylmethanone Chemical compound OC1=C(O)C(O)=C(O)C(O)=C1C(=O)C1=CC=CC=C1 UYBDKTYLTZZVEB-UHFFFAOYSA-N 0.000 description 1
- HGTUJZTUQFXBIH-UHFFFAOYSA-N (2,3-dimethyl-3-phenylbutan-2-yl)benzene Chemical compound C=1C=CC=CC=1C(C)(C)C(C)(C)C1=CC=CC=C1 HGTUJZTUQFXBIH-UHFFFAOYSA-N 0.000 description 1
- OKJFKPFBSPZTAH-UHFFFAOYSA-N (2,4-dihydroxyphenyl)-(4-hydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O OKJFKPFBSPZTAH-UHFFFAOYSA-N 0.000 description 1
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical class OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- FDYDISGSYGFRJM-UHFFFAOYSA-N (2-methyl-2-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1C(OC(=O)C(=C)C)(C)C2C3 FDYDISGSYGFRJM-UHFFFAOYSA-N 0.000 description 1
- FVQMJJQUGGVLEP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)C FVQMJJQUGGVLEP-UHFFFAOYSA-N 0.000 description 1
- HCXVPNKIBYLBIT-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 3,5,5-trimethylhexaneperoxoate Chemical compound CC(C)(C)CC(C)CC(=O)OOOC(C)(C)C HCXVPNKIBYLBIT-UHFFFAOYSA-N 0.000 description 1
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 1
- QSUJHKWXLIQKEY-UHFFFAOYSA-N (2-oxooxolan-3-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCOC1=O QSUJHKWXLIQKEY-UHFFFAOYSA-N 0.000 description 1
- OOIBFPKQHULHSQ-UHFFFAOYSA-N (3-hydroxy-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC2(O)CC1(OC(=O)C(=C)C)C3 OOIBFPKQHULHSQ-UHFFFAOYSA-N 0.000 description 1
- ZORJPNCZZRLEDF-UHFFFAOYSA-N (3-methoxy-3-methylbutoxy)carbonyloxy (3-methoxy-3-methylbutyl) carbonate Chemical compound COC(C)(C)CCOC(=O)OOC(=O)OCCC(C)(C)OC ZORJPNCZZRLEDF-UHFFFAOYSA-N 0.000 description 1
- LOCTYHIHNCOYJZ-UHFFFAOYSA-N (4-aminophenyl) 4-aminobenzoate Chemical compound C1=CC(N)=CC=C1OC(=O)C1=CC=C(N)C=C1 LOCTYHIHNCOYJZ-UHFFFAOYSA-N 0.000 description 1
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- NOBYOEQUFMGXBP-UHFFFAOYSA-N (4-tert-butylcyclohexyl) (4-tert-butylcyclohexyl)oxycarbonyloxy carbonate Chemical compound C1CC(C(C)(C)C)CCC1OC(=O)OOC(=O)OC1CCC(C(C)(C)C)CC1 NOBYOEQUFMGXBP-UHFFFAOYSA-N 0.000 description 1
- RIPYNJLMMFGZSX-UHFFFAOYSA-N (5-benzoylperoxy-2,5-dimethylhexan-2-yl) benzenecarboperoxoate Chemical compound C=1C=CC=CC=1C(=O)OOC(C)(C)CCC(C)(C)OOC(=O)C1=CC=CC=C1 RIPYNJLMMFGZSX-UHFFFAOYSA-N 0.000 description 1
- FYRCDEARNUVZRG-UHFFFAOYSA-N 1,1,5-trimethyl-3,3-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CC(C)CC(C)(C)C1 FYRCDEARNUVZRG-UHFFFAOYSA-N 0.000 description 1
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 1
- VBQCFYPTKHCPGI-UHFFFAOYSA-N 1,1-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CCCCC1 VBQCFYPTKHCPGI-UHFFFAOYSA-N 0.000 description 1
- VTEYUPDBOLSXCD-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)-2-methylcyclohexane Chemical compound CC1CCCCC1(OOC(C)(C)C)OOC(C)(C)C VTEYUPDBOLSXCD-UHFFFAOYSA-N 0.000 description 1
- NALFRYPTRXKZPN-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane Chemical compound CC1CC(C)(C)CC(OOC(C)(C)C)(OOC(C)(C)C)C1 NALFRYPTRXKZPN-UHFFFAOYSA-N 0.000 description 1
- BEGHWJKOEXHMAZ-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)butane Chemical compound CC(C)(C)OOC(CCC)OOC(C)(C)C BEGHWJKOEXHMAZ-UHFFFAOYSA-N 0.000 description 1
- OTMBZPVYOQYPBE-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)cyclododecane Chemical compound CC(C)(C)OOC1(OOC(C)(C)C)CCCCCCCCCCC1 OTMBZPVYOQYPBE-UHFFFAOYSA-N 0.000 description 1
- HSLFISVKRDQEBY-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)cyclohexane Chemical compound CC(C)(C)OOC1(OOC(C)(C)C)CCCCC1 HSLFISVKRDQEBY-UHFFFAOYSA-N 0.000 description 1
- BEQKKZICTDFVMG-UHFFFAOYSA-N 1,2,3,4,6-pentaoxepane-5,7-dione Chemical compound O=C1OOOOC(=O)O1 BEQKKZICTDFVMG-UHFFFAOYSA-N 0.000 description 1
- ROLAGNYPWIVYTG-UHFFFAOYSA-N 1,2-bis(4-methoxyphenyl)ethanamine;hydrochloride Chemical compound Cl.C1=CC(OC)=CC=C1CC(N)C1=CC=C(OC)C=C1 ROLAGNYPWIVYTG-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- MGGUNTLIBUDONN-UHFFFAOYSA-N 1,2-dimethylnaphthalene;formaldehyde Chemical class O=C.C1=CC=CC2=C(C)C(C)=CC=C21 MGGUNTLIBUDONN-UHFFFAOYSA-N 0.000 description 1
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- AYMDJPGTQFHDSA-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)-2-ethoxyethane Chemical compound CCOCCOCCOC=C AYMDJPGTQFHDSA-UHFFFAOYSA-N 0.000 description 1
- XSZYESUNPWGWFQ-UHFFFAOYSA-N 1-(2-hydroperoxypropan-2-yl)-4-methylcyclohexane Chemical compound CC1CCC(C(C)(C)OO)CC1 XSZYESUNPWGWFQ-UHFFFAOYSA-N 0.000 description 1
- GKENVXBVOLNPDO-UHFFFAOYSA-N 1-[2,5-dimethyl-5-(3-methylphenyl)peroxyhexan-2-yl]peroxy-3-methylbenzene Chemical compound CC1=CC=CC(OOC(C)(C)CCC(C)(C)OOC=2C=C(C)C=CC=2)=C1 GKENVXBVOLNPDO-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- QQLIGMASAVJVON-UHFFFAOYSA-N 1-naphthalen-1-ylethanone Chemical compound C1=CC=C2C(C(=O)C)=CC=CC2=C1 QQLIGMASAVJVON-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical group C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- AUFZRCJENRSRLY-UHFFFAOYSA-N 2,3,5-trimethylhydroquinone Chemical compound CC1=CC(O)=C(C)C(C)=C1O AUFZRCJENRSRLY-UHFFFAOYSA-N 0.000 description 1
- CRJIYMRJTJWVLU-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-yl 3-(5,5-dimethylhexyl)dioxirane-3-carboxylate Chemical compound CC(C)(C)CCCCC1(C(=O)OC(C)(C)CC(C)(C)C)OO1 CRJIYMRJTJWVLU-UHFFFAOYSA-N 0.000 description 1
- DPGYCJUCJYUHTM-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-yloxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)CC(C)(C)C DPGYCJUCJYUHTM-UHFFFAOYSA-N 0.000 description 1
- RNIPJYFZGXJSDD-UHFFFAOYSA-N 2,4,5-triphenyl-1h-imidazole Chemical compound C1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 RNIPJYFZGXJSDD-UHFFFAOYSA-N 0.000 description 1
- ZXDDPOHVAMWLBH-UHFFFAOYSA-N 2,4-Dihydroxybenzophenone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 ZXDDPOHVAMWLBH-UHFFFAOYSA-N 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- PFHTYDZPRYLZHX-UHFFFAOYSA-N 2-(2,5-dihydroxyphenyl)benzene-1,4-diol Chemical compound OC1=CC=C(O)C(C=2C(=CC=C(O)C=2)O)=C1 PFHTYDZPRYLZHX-UHFFFAOYSA-N 0.000 description 1
- AVTLBBWTUPQRAY-UHFFFAOYSA-N 2-(2-cyanobutan-2-yldiazenyl)-2-methylbutanenitrile Chemical compound CCC(C)(C#N)N=NC(C)(CC)C#N AVTLBBWTUPQRAY-UHFFFAOYSA-N 0.000 description 1
- PJABOTZVAHGVAF-UHFFFAOYSA-N 2-(2-cyclohexylpropan-2-yl)-7,7-dimethyloctaneperoxoic acid Chemical compound CC(C)(C)CCCCC(C(=O)OO)C(C)(C)C1CCCCC1 PJABOTZVAHGVAF-UHFFFAOYSA-N 0.000 description 1
- CHKCPIUYSMYEEW-UHFFFAOYSA-N 2-(2-cyclohexylpropan-2-ylperoxy)-2-ethylhexanoic acid Chemical compound CCCCC(CC)(C(O)=O)OOC(C)(C)C1CCCCC1 CHKCPIUYSMYEEW-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- IBKFNGCWUPNUHY-UHFFFAOYSA-N 2-(4-aminophenyl)-1,3-benzoxazol-6-amine Chemical compound C1=CC(N)=CC=C1C1=NC2=CC=C(N)C=C2O1 IBKFNGCWUPNUHY-UHFFFAOYSA-N 0.000 description 1
- RFIMISVNSAUMBU-UHFFFAOYSA-N 2-(hydroxymethyl)-2-(prop-2-enoxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC=C RFIMISVNSAUMBU-UHFFFAOYSA-N 0.000 description 1
- SFRDXVJWXWOTEW-UHFFFAOYSA-N 2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)CO SFRDXVJWXWOTEW-UHFFFAOYSA-N 0.000 description 1
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 1
- OALMZWNBNXQUAL-UHFFFAOYSA-N 2-[(1-amino-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanamide Chemical compound NC(=O)C(C)(C)N=NC(C)(C)C(N)=O OALMZWNBNXQUAL-UHFFFAOYSA-N 0.000 description 1
- MYECVPCGFLCGQX-UHFFFAOYSA-N 2-[(1-amino-2-methyl-1-phenyliminopropan-2-yl)diazenyl]-2-methyl-n'-phenylpropanimidamide;dihydrochloride Chemical compound Cl.Cl.C=1C=CC=CC=1NC(=N)C(C)(C)N=NC(C)(C)C(=N)NC1=CC=CC=C1 MYECVPCGFLCGQX-UHFFFAOYSA-N 0.000 description 1
- JSXJQCUORJYVDN-UHFFFAOYSA-N 2-[(1-amino-2-methyl-1-prop-2-enyliminopropan-2-yl)diazenyl]-2-methyl-n'-prop-2-enylpropanimidamide;dihydrochloride Chemical compound Cl.Cl.C=CCNC(=N)C(C)(C)N=NC(C)(C)C(=N)NCC=C JSXJQCUORJYVDN-UHFFFAOYSA-N 0.000 description 1
- VUDVPVOIALASLB-UHFFFAOYSA-N 2-[(2-cyano-1-hydroxypropan-2-yl)diazenyl]-3-hydroxy-2-methylpropanenitrile Chemical compound OCC(C)(C#N)N=NC(C)(CO)C#N VUDVPVOIALASLB-UHFFFAOYSA-N 0.000 description 1
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 1
- QRGNGVOBMOHGED-UHFFFAOYSA-N 2-[2-[2-(5-hydroxy-1,4,5,6-tetrahydropyrimidin-2-yl)propan-2-yldiazenyl]propan-2-yl]-1,4,5,6-tetrahydropyrimidin-5-ol;dihydrochloride Chemical compound Cl.Cl.N=1CC(O)CNC=1C(C)(C)N=NC(C)(C)C1=NCC(O)CN1 QRGNGVOBMOHGED-UHFFFAOYSA-N 0.000 description 1
- FLKBKUFGKQPPRY-UHFFFAOYSA-N 2-[2-[2-[2-[1-(2-hydroxyethyl)-4,5-dihydroimidazol-2-yl]propan-2-yldiazenyl]propan-2-yl]-4,5-dihydroimidazol-1-yl]ethanol;dihydrochloride Chemical compound Cl.Cl.N=1CCN(CCO)C=1C(C)(C)N=NC(C)(C)C1=NCCN1CCO FLKBKUFGKQPPRY-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- XKBHBVFIWWDGQX-UHFFFAOYSA-N 2-bromo-3,3,4,4,5,5,5-heptafluoropent-1-ene Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(Br)=C XKBHBVFIWWDGQX-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- CKSAKVMRQYOFBC-UHFFFAOYSA-N 2-cyanopropan-2-yliminourea Chemical compound N#CC(C)(C)N=NC(N)=O CKSAKVMRQYOFBC-UHFFFAOYSA-N 0.000 description 1
- VGZZAZYCLRYTNQ-UHFFFAOYSA-N 2-ethoxyethoxycarbonyloxy 2-ethoxyethyl carbonate Chemical compound CCOCCOC(=O)OOC(=O)OCCOCC VGZZAZYCLRYTNQ-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- BZGMEGUFFDTCNP-UHFFFAOYSA-N 2-hydroperoxy-2-methylpentane Chemical compound CCCC(C)(C)OO BZGMEGUFFDTCNP-UHFFFAOYSA-N 0.000 description 1
- PCKZAVNWRLEHIP-UHFFFAOYSA-N 2-hydroxy-1-[4-[[4-(2-hydroxy-2-methylpropanoyl)phenyl]methyl]phenyl]-2-methylpropan-1-one Chemical compound C1=CC(C(=O)C(C)(O)C)=CC=C1CC1=CC=C(C(=O)C(C)(C)O)C=C1 PCKZAVNWRLEHIP-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- RTEZVHMDMFEURJ-UHFFFAOYSA-N 2-methylpentan-2-yl 2,2-dimethylpropaneperoxoate Chemical compound CCCC(C)(C)OOC(=O)C(C)(C)C RTEZVHMDMFEURJ-UHFFFAOYSA-N 0.000 description 1
- YMMLZUQDXYPNOG-UHFFFAOYSA-N 2-methylpentan-2-yl 7,7-dimethyloctaneperoxoate Chemical compound CCCC(C)(C)OOC(=O)CCCCCC(C)(C)C YMMLZUQDXYPNOG-UHFFFAOYSA-N 0.000 description 1
- WXDJDZIIPSOZAH-UHFFFAOYSA-N 2-methylpentan-2-yl benzenecarboperoxoate Chemical compound CCCC(C)(C)OOC(=O)C1=CC=CC=C1 WXDJDZIIPSOZAH-UHFFFAOYSA-N 0.000 description 1
- RPBWMJBZQXCSFW-UHFFFAOYSA-N 2-methylpropanoyl 2-methylpropaneperoxoate Chemical compound CC(C)C(=O)OOC(=O)C(C)C RPBWMJBZQXCSFW-UHFFFAOYSA-N 0.000 description 1
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- QMAQLCVJIYANPZ-UHFFFAOYSA-N 2-propoxyethyl acetate Chemical compound CCCOCCOC(C)=O QMAQLCVJIYANPZ-UHFFFAOYSA-N 0.000 description 1
- BIISIZOQPWZPPS-UHFFFAOYSA-N 2-tert-butylperoxypropan-2-ylbenzene Chemical compound CC(C)(C)OOC(C)(C)C1=CC=CC=C1 BIISIZOQPWZPPS-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- KFGFVPMRLOQXNB-UHFFFAOYSA-N 3,5,5-trimethylhexanoyl 3,5,5-trimethylhexaneperoxoate Chemical compound CC(C)(C)CC(C)CC(=O)OOC(=O)CC(C)CC(C)(C)C KFGFVPMRLOQXNB-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- ZMPZWXKBGSQATE-UHFFFAOYSA-N 3-(4-aminophenyl)sulfonylaniline Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=CC(N)=C1 ZMPZWXKBGSQATE-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- NMRPBPVERJPACX-QMMMGPOBSA-N 3-Octanol Natural products CCCCC[C@@H](O)CC NMRPBPVERJPACX-QMMMGPOBSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- NQZOFDAHZVLQJO-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 NQZOFDAHZVLQJO-UHFFFAOYSA-N 0.000 description 1
- AGQCQAYKDWYIKI-UHFFFAOYSA-N 3-methoxy-3-methylbutanoic acid Chemical compound COC(C)(C)CC(O)=O AGQCQAYKDWYIKI-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical group C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- MKTOIPPVFPJEQO-UHFFFAOYSA-N 4-(3-carboxypropanoylperoxy)-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)OOC(=O)CCC(O)=O MKTOIPPVFPJEQO-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- NBLFJUWXERDUEN-UHFFFAOYSA-N 4-[(2,3,4-trihydroxyphenyl)methyl]benzene-1,2,3-triol Chemical compound OC1=C(O)C(O)=CC=C1CC1=CC=C(O)C(O)=C1O NBLFJUWXERDUEN-UHFFFAOYSA-N 0.000 description 1
- FNFYXIMJKWENNK-UHFFFAOYSA-N 4-[(2,4-dihydroxyphenyl)methyl]benzene-1,3-diol Chemical compound OC1=CC(O)=CC=C1CC1=CC=C(O)C=C1O FNFYXIMJKWENNK-UHFFFAOYSA-N 0.000 description 1
- HDPBBNNDDQOWPJ-UHFFFAOYSA-N 4-[1,2,2-tris(4-hydroxyphenyl)ethyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 HDPBBNNDDQOWPJ-UHFFFAOYSA-N 0.000 description 1
- YMSALPCDWZMQQG-UHFFFAOYSA-N 4-[2-(2,4-dihydroxyphenyl)propan-2-yl]benzene-1,3-diol Chemical compound C=1C=C(O)C=C(O)C=1C(C)(C)C1=CC=C(O)C=C1O YMSALPCDWZMQQG-UHFFFAOYSA-N 0.000 description 1
- PVFQHGDIOXNKIC-UHFFFAOYSA-N 4-[2-[3-[2-(4-hydroxyphenyl)propan-2-yl]phenyl]propan-2-yl]phenol Chemical compound C=1C=CC(C(C)(C)C=2C=CC(O)=CC=2)=CC=1C(C)(C)C1=CC=C(O)C=C1 PVFQHGDIOXNKIC-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- CIZUMWWHWPJAAK-UHFFFAOYSA-N 4-[9-(4-amino-3-chlorophenyl)fluoren-9-yl]-2-chloroaniline Chemical compound C1=C(Cl)C(N)=CC=C1C1(C=2C=C(Cl)C(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 CIZUMWWHWPJAAK-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- WFCQTAXSWSWIHS-UHFFFAOYSA-N 4-[bis(4-hydroxyphenyl)methyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 WFCQTAXSWSWIHS-UHFFFAOYSA-N 0.000 description 1
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 1
- XRUKRHLZDVJJSX-UHFFFAOYSA-N 4-cyanopentanoic acid Chemical compound N#CC(C)CCC(O)=O XRUKRHLZDVJJSX-UHFFFAOYSA-N 0.000 description 1
- OPPHXULEHGYZRW-UHFFFAOYSA-N 4-methoxy-2,4-dimethyl-2-phenyldiazenylpentanenitrile Chemical compound COC(C)(C)CC(C)(C#N)N=NC1=CC=CC=C1 OPPHXULEHGYZRW-UHFFFAOYSA-N 0.000 description 1
- NFWPZNNZUCPLAX-UHFFFAOYSA-N 4-methoxy-3-methylaniline Chemical compound COC1=CC=C(N)C=C1C NFWPZNNZUCPLAX-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- JSCKLKXCIXPMJK-UHFFFAOYSA-N 4-tert-butylperoxy-3-hydroxy-4-oxobutanoic acid Chemical compound CC(C)(C)OOC(=O)C(CC(=O)O)O JSCKLKXCIXPMJK-UHFFFAOYSA-N 0.000 description 1
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical group C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 1
- IXCOKTMGCRJMDR-UHFFFAOYSA-N 9h-fluorene;phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1.C1=CC=C2CC3=CC=CC=C3C2=C1 IXCOKTMGCRJMDR-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- GIXXQTYGFOHYPT-UHFFFAOYSA-N Bisphenol P Chemical compound C=1C=C(C(C)(C)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 GIXXQTYGFOHYPT-UHFFFAOYSA-N 0.000 description 1
- GMTFURRRXIRGLH-UHFFFAOYSA-N C12CCCC2C2(CN)CC1CC2 Chemical compound C12CCCC2C2(CN)CC1CC2 GMTFURRRXIRGLH-UHFFFAOYSA-N 0.000 description 1
- YXQPQPYXPLOMJV-UHFFFAOYSA-N C=CC(OCCOc1ccc(C(c(cc2)ccc2-c2ccccc2)c(c(OCCOC(C=C)=O)c2)ccc2OCCOC(C=C)=O)c(OCCOC(C=C)=O)c1)=O Chemical compound C=CC(OCCOc1ccc(C(c(cc2)ccc2-c2ccccc2)c(c(OCCOC(C=C)=O)c2)ccc2OCCOC(C=C)=O)c(OCCOC(C=C)=O)c1)=O YXQPQPYXPLOMJV-UHFFFAOYSA-N 0.000 description 1
- YDAMZNJRBPGZFU-UHFFFAOYSA-N CC(c(cc1)ccc1-c1ccccc1)(c(c(cc(cc1)O)c1cc1)c1O)c1c(cc(cc2)O)c2ccc1O Chemical compound CC(c(cc1)ccc1-c1ccccc1)(c(c(cc(cc1)O)c1cc1)c1O)c1c(cc(cc2)O)c2ccc1O YDAMZNJRBPGZFU-UHFFFAOYSA-N 0.000 description 1
- MSMNCJDMUDWIRU-UHFFFAOYSA-N CC(c(cc1)ccc1-c1ccccc1)(c(cc1-c2ccccc2OCCOCC=C)ccc1OCCOCC=C)c(cc1)cc(-c(cccc2)c2OCCOCC=C)c1OCCOCC=C Chemical compound CC(c(cc1)ccc1-c1ccccc1)(c(cc1-c2ccccc2OCCOCC=C)ccc1OCCOCC=C)c(cc1)cc(-c(cccc2)c2OCCOCC=C)c1OCCOCC=C MSMNCJDMUDWIRU-UHFFFAOYSA-N 0.000 description 1
- MWVKJFNJYPPXFY-UHFFFAOYSA-N CC(c1ccc(C2CCCCC2)cc1)(c(ccc(O)c1)c1Oc1c2)c1ccc2O Chemical compound CC(c1ccc(C2CCCCC2)cc1)(c(ccc(O)c1)c1Oc1c2)c1ccc2O MWVKJFNJYPPXFY-UHFFFAOYSA-N 0.000 description 1
- FWSJRNHIHMHPLT-UHFFFAOYSA-N CCCc1ccc(C2c3c(ccc(OCCO)c4)c4ccc3Oc3ccc(cc(cc4)OCCO)c4c23)cc1 Chemical compound CCCc1ccc(C2c3c(ccc(OCCO)c4)c4ccc3Oc3ccc(cc(cc4)OCCO)c4c23)cc1 FWSJRNHIHMHPLT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BJHGQNULGNMAJB-UHFFFAOYSA-N Cl.Cl.Cl.Cl.N=1CCNC=1C(C)(C)N=NC(C)(C)C1=NCCN1.N1C(C)CN=C1C(C)(C)N=NC(C)(C)C1=NCC(C)N1 Chemical compound Cl.Cl.Cl.Cl.N=1CCNC=1C(C)(C)N=NC(C)(C)C1=NCCN1.N1C(C)CN=C1C(C)(C)N=NC(C)(C)C1=NCC(C)N1 BJHGQNULGNMAJB-UHFFFAOYSA-N 0.000 description 1
- RCZRRLZTAXXBLA-UHFFFAOYSA-N Cl.Cl.N(=NC(C(=N)NCC1=CC=CC=C1)(C)C)C(C(=N)NCC1=CC=CC=C1)(C)C.Cl.Cl Chemical compound Cl.Cl.N(=NC(C(=N)NCC1=CC=CC=C1)(C)C)C(C(=N)NCC1=CC=CC=C1)(C)C.Cl.Cl RCZRRLZTAXXBLA-UHFFFAOYSA-N 0.000 description 1
- 229920000858 Cyclodextrin Polymers 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical group CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- HNBNCTSBZBISGN-UHFFFAOYSA-N NC(C(C)(C1CCCCC1)C1CCCCC1)N Chemical compound NC(C(C)(C1CCCCC1)C1CCCCC1)N HNBNCTSBZBISGN-UHFFFAOYSA-N 0.000 description 1
- JWCUSSPCBUCTNW-UHFFFAOYSA-N Oc1ccc(C(c2ccccc2)c(c(O)c2)ccc2O)c(O)c1 Chemical compound Oc1ccc(C(c2ccccc2)c(c(O)c2)ccc2O)c(O)c1 JWCUSSPCBUCTNW-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910008938 W—Si Inorganic materials 0.000 description 1
- JVZNDXYQYCDASH-UHFFFAOYSA-N [2,3-di(propan-2-yl)phenyl] 7,7-dimethyloctaneperoxoate Chemical compound CC(C)C1=CC=CC(OOC(=O)CCCCCC(C)(C)C)=C1C(C)C JVZNDXYQYCDASH-UHFFFAOYSA-N 0.000 description 1
- LXEKPEMOWBOYRF-UHFFFAOYSA-N [2-[(1-azaniumyl-1-imino-2-methylpropan-2-yl)diazenyl]-2-methylpropanimidoyl]azanium;dichloride Chemical compound Cl.Cl.NC(=N)C(C)(C)N=NC(C)(C)C(N)=N LXEKPEMOWBOYRF-UHFFFAOYSA-N 0.000 description 1
- GIXLRFOCQLIXMX-UHFFFAOYSA-N [3-(2-methylbenzoyl)benzoyl] 3-(2-methylbenzoyl)benzenecarboperoxoate Chemical compound CC1=CC=CC=C1C(=O)C1=CC=CC(C(=O)OOC(=O)C=2C=C(C=CC=2)C(=O)C=2C(=CC=CC=2)C)=C1 GIXLRFOCQLIXMX-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- WYMHMWAMZJVUTC-UHFFFAOYSA-N [4-[2-(4-cyanato-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenyl] cyanate Chemical compound C=1C=C(OC#N)C(CC=C)=CC=1C(C)(C)C1=CC=C(OC#N)C(CC=C)=C1 WYMHMWAMZJVUTC-UHFFFAOYSA-N 0.000 description 1
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 1
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 1
- IPTNXMGXEGQYSY-UHFFFAOYSA-N acetic acid;1-methoxybutan-1-ol Chemical compound CC(O)=O.CCCC(O)OC IPTNXMGXEGQYSY-UHFFFAOYSA-N 0.000 description 1
- WFDIJRYMOXRFFG-UHFFFAOYSA-N acetic anhydride Substances CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- XMSVKICKONKVNM-UHFFFAOYSA-N bicyclo[2.2.1]heptane-3,4-diamine Chemical compound C1CC2(N)C(N)CC1C2 XMSVKICKONKVNM-UHFFFAOYSA-N 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical compound C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- DMVOXQPQNTYEKQ-UHFFFAOYSA-N biphenyl-4-amine Chemical group C1=CC(N)=CC=C1C1=CC=CC=C1 DMVOXQPQNTYEKQ-UHFFFAOYSA-N 0.000 description 1
- JQRRFDWXQOQICD-UHFFFAOYSA-N biphenylen-1-ylboronic acid Chemical compound C12=CC=CC=C2C2=C1C=CC=C2B(O)O JQRRFDWXQOQICD-UHFFFAOYSA-N 0.000 description 1
- WPKWPKDNOPEODE-UHFFFAOYSA-N bis(2,4,4-trimethylpentan-2-yl)diazene Chemical compound CC(C)(C)CC(C)(C)N=NC(C)(C)CC(C)(C)C WPKWPKDNOPEODE-UHFFFAOYSA-N 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- ZDNFTNPFYCKVTB-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,4-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=C(C(=O)OCC=C)C=C1 ZDNFTNPFYCKVTB-UHFFFAOYSA-N 0.000 description 1
- AJTNUOLFTQRAKF-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy] benzene-1,3-dicarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC(C(=O)OOOC(C)(C)C)=C1 AJTNUOLFTQRAKF-UHFFFAOYSA-N 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- GSZJXKXRHCJVCI-UHFFFAOYSA-N bis[2-(4,5,6,7-tetrahydro-1h-1,3-diazepin-2-yl)propan-2-yl]diazene;dihydrochloride Chemical compound Cl.Cl.N=1CCCCNC=1C(C)(C)N=NC(C)(C)C1=NCCCCN1 GSZJXKXRHCJVCI-UHFFFAOYSA-N 0.000 description 1
- LWMFAFLIWMPZSX-UHFFFAOYSA-N bis[2-(4,5-dihydro-1h-imidazol-2-yl)propan-2-yl]diazene Chemical compound N=1CCNC=1C(C)(C)N=NC(C)(C)C1=NCCN1 LWMFAFLIWMPZSX-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- NSGQRLUGQNBHLD-UHFFFAOYSA-N butan-2-yl butan-2-yloxycarbonyloxy carbonate Chemical compound CCC(C)OC(=O)OOC(=O)OC(C)CC NSGQRLUGQNBHLD-UHFFFAOYSA-N 0.000 description 1
- GDLKDGFIUWNVSJ-UHFFFAOYSA-N butyl 3-methoxy-3-methylbutanoate Chemical compound CCCCOC(=O)CC(C)(C)OC GDLKDGFIUWNVSJ-UHFFFAOYSA-N 0.000 description 1
- XYKQGLNAVREJFA-UHFFFAOYSA-N butyl 3-methoxybutanoate Chemical compound CCCCOC(=O)CC(C)OC XYKQGLNAVREJFA-UHFFFAOYSA-N 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- SPTHWAJJMLCAQF-UHFFFAOYSA-M ctk4f8481 Chemical compound [O-]O.CC(C)C1=CC=CC=C1C(C)C SPTHWAJJMLCAQF-UHFFFAOYSA-M 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- BSSKIRRGLQWEBU-UHFFFAOYSA-N cyclohexyl-(1,2,2,3-tetramethylcyclohexyl)methanediamine Chemical compound CC1C(C(CCC1)(C(C1CCCCC1)(N)N)C)(C)C BSSKIRRGLQWEBU-UHFFFAOYSA-N 0.000 description 1
- GMAYNBHUHYFCPZ-UHFFFAOYSA-N cyclohexyl-(4,4-dimethylcyclohexyl)methanediamine Chemical compound C1CC(C)(C)CCC1C(N)(N)C1CCCCC1 GMAYNBHUHYFCPZ-UHFFFAOYSA-N 0.000 description 1
- XCIXKGXIYUWCLL-UHFFFAOYSA-N cyclopentanol Chemical compound OC1CCCC1 XCIXKGXIYUWCLL-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- KEIQPMUPONZJJH-UHFFFAOYSA-N dicyclohexylmethanediamine Chemical compound C1CCCCC1C(N)(N)C1CCCCC1 KEIQPMUPONZJJH-UHFFFAOYSA-N 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- KGGOIDKBHYYNIC-UHFFFAOYSA-N ditert-butyl 4-[3,4-bis(tert-butylperoxycarbonyl)benzoyl]benzene-1,2-dicarboperoxoate Chemical compound C1=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=CC=C1C(=O)C1=CC=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=C1 KGGOIDKBHYYNIC-UHFFFAOYSA-N 0.000 description 1
- GKCPCPKXFGQXGS-UHFFFAOYSA-N ditert-butyldiazene Chemical compound CC(C)(C)N=NC(C)(C)C GKCPCPKXFGQXGS-UHFFFAOYSA-N 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 125000000457 gamma-lactone group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- JARKCYVAAOWBJS-UHFFFAOYSA-N hexanal Chemical compound CCCCCC=O JARKCYVAAOWBJS-UHFFFAOYSA-N 0.000 description 1
- WYLSZTNILLDWIH-UHFFFAOYSA-N hexanoyloxy 2-ethylhexaneperoxoate Chemical compound C(CCCCC)(=O)OOOC(C(CCCC)CC)=O WYLSZTNILLDWIH-UHFFFAOYSA-N 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- XLSMFKSTNGKWQX-UHFFFAOYSA-N hydroxyacetone Chemical compound CC(=O)CO XLSMFKSTNGKWQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229930002839 ionone Natural products 0.000 description 1
- 150000002499 ionone derivatives Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M isovalerate Chemical compound CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- 150000004715 keto acids Chemical class 0.000 description 1
- 150000003903 lactic acid esters Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 229940098895 maleic acid Drugs 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- LYLUAHKXJUQFDG-UHFFFAOYSA-N methyl 3-methoxy-2-methylpropanoate Chemical compound COCC(C)C(=O)OC LYLUAHKXJUQFDG-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- QPORPSZVAFONPJ-UHFFFAOYSA-N n'-(2-hydroxyethyl)-2-methylpropanimidamide;dihydrochloride Chemical compound Cl.Cl.CC(C)C(N)=NCCO QPORPSZVAFONPJ-UHFFFAOYSA-N 0.000 description 1
- WVFLGSMUPMVNTQ-UHFFFAOYSA-N n-(2-hydroxyethyl)-2-[[1-(2-hydroxyethylamino)-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound OCCNC(=O)C(C)(C)N=NC(C)(C)C(=O)NCCO WVFLGSMUPMVNTQ-UHFFFAOYSA-N 0.000 description 1
- BUGISVZCMXHOHO-UHFFFAOYSA-N n-[1,3-dihydroxy-2-(hydroxymethyl)propan-2-yl]-2-[[1-[[1,3-dihydroxy-2-(hydroxymethyl)propan-2-yl]amino]-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound OCC(CO)(CO)NC(=O)C(C)(C)N=NC(C)(C)C(=O)NC(CO)(CO)CO BUGISVZCMXHOHO-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- XNTUJOTWIMFEQS-UHFFFAOYSA-N octadecanoyl octadecaneperoxoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCCCCCCCC XNTUJOTWIMFEQS-UHFFFAOYSA-N 0.000 description 1
- WOFPPJOZXUTRAU-UHFFFAOYSA-N octan-4-ol Chemical compound CCCCC(O)CCC WOFPPJOZXUTRAU-UHFFFAOYSA-N 0.000 description 1
- SRSFOMHQIATOFV-UHFFFAOYSA-N octanoyl octaneperoxoate Chemical compound CCCCCCCC(=O)OOC(=O)CCCCCCC SRSFOMHQIATOFV-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 235000010292 orthophenyl phenol Nutrition 0.000 description 1
- GEVPUGOOGXGPIO-UHFFFAOYSA-N oxalic acid;dihydrate Chemical compound O.O.OC(=O)C(O)=O GEVPUGOOGXGPIO-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- GXOHBWLPQHTYPF-UHFFFAOYSA-N pentyl 2-hydroxypropanoate Chemical compound CCCCCOC(=O)C(C)O GXOHBWLPQHTYPF-UHFFFAOYSA-N 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-O phenylphosphanium Chemical compound [PH3+]C1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-O 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 1
- OJTDGPLHRSZIAV-UHFFFAOYSA-N propane-1,2-diol Chemical compound CC(O)CO.CC(O)CO OJTDGPLHRSZIAV-UHFFFAOYSA-N 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229940032330 sulfuric acid Drugs 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- XTXFUQOLBKQKJU-UHFFFAOYSA-N tert-butylperoxy(trimethyl)silane Chemical compound CC(C)(C)OO[Si](C)(C)C XTXFUQOLBKQKJU-UHFFFAOYSA-N 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- LZTRCELOJRDYMQ-UHFFFAOYSA-N triphenylmethanol Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(O)C1=CC=CC=C1 LZTRCELOJRDYMQ-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004704 ultra performance liquid chromatography Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/215—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/23—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
- C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
- C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
- C07D311/82—Xanthenes
- C07D311/90—Xanthenes with hydrocarbon radicals, substituted by amino radicals, directly attached in position 9
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/10—Carbocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Definitions
- the present invention relates to a compound having a specific structure, a resin, and a composition containing these.
- the present invention also relates to a pattern forming method using the composition.
- the molecular weight is as large as about 10,000 to 100,000, and the molecular weight distribution is wide, resulting in roughness on the pattern surface, making it difficult to control the pattern size, and limiting the miniaturization.
- various low molecular weight resist materials have been proposed so far in order to provide resist patterns with higher resolution. Since the low molecular weight resist material has a small molecular size, it is expected to provide a resist pattern with high resolution and low roughness.
- an alkali development type negative radiation sensitive composition for example, see Patent Document 1 and Patent Document 2 using a low molecular weight polynuclear polyphenol compound as a main component
- a low molecular weight resist material having high heat resistance As candidates, an alkali development negative radiation-sensitive composition using a low molecular weight cyclic polyphenol compound as a main component (see, for example, Patent Document 3 and Non-Patent Document 1) has also been proposed.
- Non-Patent Document 2 a polyphenol compound as a base compound for a resist material can impart high heat resistance despite its low molecular weight, and is useful for improving the resolution and roughness of a resist pattern (for example, Non-Patent Document 2). reference).
- the present inventors have so far developed a resist composition containing a compound having a specific structure and an organic solvent as a material that is excellent in etching resistance, soluble in a solvent, and applicable to a wet process (see Patent Document 4). .) Is proposed.
- a terminal layer is removed by applying a predetermined energy as a resist underlayer film for lithography having a dry etching rate selection ratio close to that of a resist.
- a material for forming a lower layer film for a multilayer resist process which contains at least a resin component having a substituent that generates a sulfonic acid residue, and a solvent (see Patent Document 5).
- a resist underlayer film material containing a polymer having a specific repeating unit has been proposed as a material for realizing a resist underlayer film for lithography having a lower dry etching rate selection ratio than a resist (see Patent Document 6). ). Furthermore, in order to realize a resist underlayer film for lithography having a low dry etching rate selection ratio compared with a semiconductor substrate, a repeating unit of acenaphthylenes and a repeating unit having a substituted or unsubstituted hydroxy group are copolymerized. A resist underlayer film material containing a polymer is proposed (see Patent Document 7).
- an amorphous carbon underlayer film formed by CVD using methane gas, ethane gas, acetylene gas or the like as a raw material is well known.
- a resist underlayer film material capable of forming a resist underlayer film by a wet process such as spin coating or screen printing is required.
- the present inventors have a composition for forming an underlayer film for lithography containing a compound having a specific structure and an organic solvent as a material having excellent etching resistance, high heat resistance, soluble in a solvent and applicable to a wet process.
- the thing (refer patent document 8) is proposed.
- the formation method of the intermediate layer used in forming the resist underlayer film in the three-layer process for example, a silicon nitride film formation method (see Patent Document 9) or a silicon nitride film CVD formation method (see Patent Document 10).
- a silicon nitride film formation method for example, a silicon nitride film formation method (see Patent Document 9) or a silicon nitride film CVD formation method (see Patent Document 10).
- an intermediate layer material for a three-layer process a material containing a silsesquioxane-based silicon compound is known (see Patent Documents 11 and 12).
- the present invention has been made in view of the above-described problems, and its purpose is to form a photoresist and a lower layer film for photoresist that can be applied with a wet process and have excellent heat resistance, solubility, and etching resistance. It is an object of the present invention to provide a compound, a resin, and a film-forming composition for lithography that are useful for the above. Another object of the present invention is to provide a resist film, a resist underlayer film, a resist permanent film, and a pattern forming method using the composition. Furthermore, it is providing the composition for optical members.
- the present inventors have found that the above problems can be solved by a compound or resin having a specific structure, and have completed the present invention. That is, the present invention is as follows. [1] The compound represented by following formula (0).
- R Y is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms
- R Z is an N-valent group having 1 to 60 carbon atoms or a single bond
- R T each independently has an alkyl group having 1 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, or a substituent.
- An optionally substituted alkenyl group having 2 to 30 carbon atoms, an optionally substituted alkoxy group having 1 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group or a hydroxyl group Are substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ethers.
- binding may contain ketone or ester bond, wherein at least one hydroxyl group of a hydrogen atom allyl oxyalkyl group R T, acryloxy a Includes one substituted group with a group selected from the kill group or methacryloxy group, X represents an oxygen atom, a sulfur atom or no bridge, m is each independently an integer of 0 to 9, wherein at least one of m is an integer of 1 to 9, N is an integer of 1 to 4, where, when N is an integer of 2 or more, the structural formulas in N [] may be the same or different, Each r is independently an integer of 0-2. ) [2] The compound according to [1] above, wherein the compound represented by the formula (0) is a compound represented by the following formula (1).
- R 0 has the same meaning as R Y
- R 1 is an n-valent group having 1 to 60 carbon atoms or a single bond
- R 2 to R 5 are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, or a substituent.
- n is synonymous with the above N, and here, when n is an integer of 2 or more, the structural formulas in the n [] may be the same or different, p 2 to p 5 have the same meaning as r. ) [3]
- R 0A has the same meaning as R Y
- R 1A is an n A valent group having 1 to 60 carbon atoms or a single bond
- R 2A each independently has an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, or a substituent.
- An optionally substituted alkenyl group having 2 to 30 carbon atoms, an optionally substituted alkoxy group having 1 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group or a hydroxyl group Are substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ethers.
- n A has the same meaning as N above.
- n A is an integer of 2 or more
- the structural formulas in n A [] may be the same or different
- X A represents an oxygen atom, a sulfur atom, or no bridge
- m 2A is each independently an integer of 0 to 7, provided that at least one m 2A is an integer of 1 to 7
- q A is each independently 0 or 1.
- R 0 , R 1 , R 4 , R 5 , n, p 2 to p 5 , m 4 and m 5 are as defined above.
- R 6 to R 7 are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, or a substituent.
- An alkenyl group having 2 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, or a thiol group, which may have R 10 to R 11 are each independently one group selected from a hydrogen atom or an allyloxyalkyl group, an acryloxyalkyl group, or a methacryloxyalkyl group;
- at least one of R 10 to R 11 is one group selected from an allyloxyalkyl group, an acryloxyalkyl group, or a methacryloxyalkyl group
- m 6 and m 7 are each independently an integer of 0 to 7, However, m 4 , m 5 , m 6 and m 7 are not 0 at the same time.
- the compound according to [4] above, wherein the compound represented by the formula (1-1) is a compound represented by the following formula (1-2).
- R 0 , R 1 , R 6 , R 7 , R 10 , R 11 , n, p 2 to p 5 , m 6 and m 7 are as defined above.
- R 8 to R 9 have the same meanings as R 6 to R 7
- R 12 to R 13 have the same meanings as R 10 to R 11
- m 8 and m 9 are each independently an integer of 0 to 8, However, m 6 , m 7 , m 8 and m 9 are not 0 at the same time.
- [6] The compound according to [3] above, wherein the compound represented by the formula (2) is a compound represented by the following formula (2-1).
- R 0A , R 1A , n A , q A and X A are as defined in the formula (2);
- R 3A each independently has an alkyl group having 1 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, or a substituent.
- R 4A is each independently a group in which a hydrogen atom or a hydrogen atom of a hydroxyl group is substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group, and a methacryloxyalkyl group, wherein R 4A Is at least one group selected from an allyloxyalkyl group, an acryloxyalkyl group, and a methacryloxyalkyl group, m 6A is each independently an integer of 0 to 5.
- L is an optionally substituted alkylene group having 1 to 30 carbon atoms, an optionally substituted arylene group having 6 to 30 carbon atoms, or an optionally substituted carbon number.
- 1 to 30 alkoxylene groups or single bonds and the alkylene group, the arylene group, and the alkoxylene group may include an ether bond, a ketone bond, or an ester bond
- R 0 has the same meaning as R Y
- R 1 is an n-valent group having 1 to 60 carbon atoms or a single bond
- R 2 to R 5 are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, or a substituent.
- a is an ether bond, may contain ketone or ester bond, wherein at least one hydrogen atom of the hydroxyl group is allyloxy alkyl group R 2 ⁇ R 5, a Includes one substituted group with a group selected from Lil oxyalkyl group or methacryloxy group, m 2 and m 3 are each independently an integer of 0 to 8, m 4 and m 5 are each independently an integer of 0 to 9, However, m 2 , m 3 , m 4 and m 5 are not 0 at the same time, and at least one of R 2 to R 5 is a hydrogen atom of a hydroxyl group is an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group. A group substituted with one group selected from the group. ) [9] Resin as described in said [7] which has a structure represented by following formula (4).
- L has an optionally substituted alkylene group having 1 to 30 carbon atoms, an optionally substituted arylene group having 6 to 30 carbon atoms, and a substituent.
- the alkylene group, the arylene group and the alkoxylene group may contain an ether bond, a ketone bond or an ester bond
- R 0A has the same meaning as R Y
- R 1A is an n A valent group having 1 to 30 carbon atoms or a single bond
- R 2A each independently has an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, or a substituent.
- An optionally substituted alkenyl group having 2 to 30 carbon atoms, an optionally substituted alkoxy group having 1 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group or a hydroxyl group Are substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ethers.
- binding it may contain ketone or ester bond, wherein at least one hydroxyl group of a hydrogen atom allyl oxyalkyl group R 2A, acrylic Oki Includes one substituted group with a group selected from an alkyl or methacryloxyalkyl group, n A has the same meaning as N above.
- n A is an integer of 2 or more
- the structural formulas in n A [] may be the same or different
- X A represents an oxygen atom, a sulfur atom, or no bridge
- m 2A is each independently an integer of 0 to 7, provided that at least one m 2A is an integer of 1 to 7
- q A is each independently 0 or 1.
- a composition comprising at least one selected from the group consisting of the compound according to any one of [1] to [6] and the resin according to any one of [7] to [9]. [11] The composition according to the above [10], further comprising a solvent. [12] The composition according to [10] or [11] above, further comprising an acid generator. [13] The composition according to any one of the above [10] to [12], further comprising a crosslinking agent.
- the cross-linking agent is at least one selected from the group consisting of phenol compounds, epoxy compounds, cyanate compounds, amino compounds, benzoxazine compounds, melamine compounds, guanamine compounds, glycoluril compounds, urea compounds, isocyanate compounds, and azide compounds.
- the content of the cross-linking agent is one or more selected from the group consisting of the compound according to any one of [1] to [6] and the resin according to any one of [7] to [9].
- the crosslinking accelerator is at least one selected from the group consisting of amines, imidazoles, organic phosphines, and Lewis acids.
- the content of the crosslinking accelerator is at least one selected from the group consisting of the compound according to any one of [1] to [6] and the resin according to any one of [7] to [9].
- the radical polymerization initiator is at least one selected from the group consisting of a ketone photopolymerization initiator, an organic peroxide polymerization initiator, and an azo polymerization initiator.
- the content ratio of the radical polymerization initiator is the compound according to any one of [1] to [6] and the resin according to any one of [7] to [9].
- Composition. [23] The composition according to any one of [10] to [22], which is used for forming a film for lithography. [24] The composition according to any one of [10] to [22], which is used for forming a resist permanent film. [25] The composition according to any one of [10] to [22], which is used for forming an optical component. [26] A resist pattern including a step of forming a photoresist layer on the substrate using the composition described in [23], and then irradiating a predetermined region of the photoresist layer with radiation to perform development.
- a lower layer film is formed on the substrate by using the composition described in [23], and at least one photoresist layer is formed on the lower layer film, and then a predetermined layer of the photoresist layer is formed.
- a resist pattern forming method including a step of irradiating a region with radiation and performing development.
- a lower layer film is formed on the substrate using the composition described in [23], an intermediate layer film is formed on the lower layer film using a resist intermediate layer film material, and the intermediate layer film is formed.
- a circuit pattern including a step of forming a pattern on the substrate by etching the substrate using the obtained intermediate layer film pattern as an etching mask and etching the substrate using the obtained lower layer film pattern as an etching mask Forming method.
- the compound and resin in the present invention are highly soluble in a safe solvent, and have good heat resistance and etching resistance. Moreover, the resist composition containing the compound and / or resin in the present invention gives a good resist pattern shape.
- the present embodiment a mode for carrying out the present invention (hereinafter also referred to as “the present embodiment”) will be described.
- the following embodiment is an illustration for demonstrating this invention, and this invention is not limited only to the embodiment.
- the compound, resin, and composition containing the compound in the present embodiment can be applied to a wet process, and are useful for forming a photoresist underlayer film having excellent heat resistance and etching resistance.
- the composition in this embodiment uses a compound or resin having a specific structure with high heat resistance and solvent solubility, deterioration of the film during high-temperature baking is suppressed, and etching resistance against oxygen plasma etching and the like.
- an excellent resist and lower layer film can be formed.
- the adhesion with the resist layer is also excellent, so that an excellent resist pattern can be formed.
- the compound and resin in the present embodiment are excellent in sensitivity and resolution when used in a photosensitive material, and while maintaining high heat resistance, further, general-purpose organic solvents, other compounds, and resin components , And a resist permanent film excellent in compatibility with the additive. Furthermore, since the refractive index is high and coloring due to a wide range of heat treatments from low to high temperatures is suppressed, it is also useful as various optical forming compositions.
- R Y is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms
- R Z is an N-valent group having 1 to 60 carbon atoms or a single bond
- R T each independently has an alkyl group having 1 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, or a substituent.
- An optionally substituted alkenyl group having 2 to 30 carbon atoms, an optionally substituted alkoxy group having 1 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group or a hydroxyl group Are substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ethers.
- binding may contain ketone or ester bond, wherein at least one hydroxyl group of a hydrogen atom allyl oxyalkyl group R T, acryloxy a Includes one substituted group with a group selected from the kill group or methacryloxy group, X represents an oxygen atom, a sulfur atom or no bridge, m is each independently an integer of 0 to 9, wherein at least one of m is an integer of 1 to 9, N is an integer of 1 to 4, where, when N is an integer of 2 or more, the structural formulas in N [] may be the same or different, Each r is independently an integer of 0-2. )
- R Y is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms.
- alkyl group a linear, branched or cyclic alkyl group can be used.
- R Y is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms, excellent heat resistance and solvent solubility are imparted. Can do.
- R z is an N-valent group having 1 to 60 carbon atoms or a single bond, and each aromatic ring is bonded through this R z .
- N is an integer of 1 to 4, and when N is an integer of 2 or more, the structural formulas in N [] may be the same or different.
- N-valent group examples include those having a linear hydrocarbon group, a branched hydrocarbon group, or an alicyclic hydrocarbon group.
- the alicyclic hydrocarbon group includes a bridged alicyclic hydrocarbon group.
- the N-valent hydrocarbon group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 60 carbon atoms.
- R T each independently has an alkyl group having 1 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, or a substituent.
- An optionally substituted alkenyl group having 2 to 30 carbon atoms, an optionally substituted alkoxy group having 1 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group or a hydroxyl group Are substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ethers.
- binding may contain ketone or ester bond, wherein at least one hydroxyl group of a hydrogen atom allyl oxyalkyl group R T, acryloxy a Including one substituted group with a group selected from the kill group or methacryloxy group.
- the alkyl group, alkenyl group and alkoxy group may be a linear, branched or cyclic group.
- the group in which the hydrogen atom of the hydroxyl group is substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group is an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group.
- X represents an oxygen atom, a sulfur atom or no bridge, and when X is an oxygen atom or a sulfur atom, it tends to develop high heat resistance, and is more preferably an oxygen atom.
- X is preferably non-crosslinked from the viewpoint of solubility.
- M is each independently an integer of 0 to 9, and at least one of m is an integer of 1 to 9.
- Each r is independently an integer of 0-2.
- the numerical range of m described above is determined according to the ring structure determined by r.
- the compound (0) in the present embodiment is preferably a compound represented by the following formula (1) from the viewpoints of heat resistance and solvent solubility.
- R 0 is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms.
- R 0 is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms
- heat resistance is relatively high and solvent solubility is improved.
- R 0 is a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms or a carbon number from the viewpoint of suppressing oxidative decomposition to suppress coloring of the compound and improving heat resistance and solvent solubility.
- a 6-30 aryl group is preferred.
- R 1 is an n-valent group having 1 to 60 carbon atoms or a single bond, and each aromatic ring is bonded via R 1 .
- R 2 to R 5 are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, or a substituent.
- n is an integer of 1 to 4.
- n is an integer of 2 or more, the structural formulas in the n [] may be the same or different.
- p 2 to p 5 are each independently an integer of 0 to 2.
- the alkyl group, alkenyl group, and alkoxy group may be linear, branched, or cyclic groups.
- An alkanepropyl group having 2 to 60 carbon atoms, and when n 4, an alkanetetrayl group having 3 to 60 carbon atoms.
- Examples of the n-valent group include those having a linear hydrocarbon group, a branched hydrocarbon group, or an alicyclic hydrocarbon group.
- the alicyclic hydrocarbon group includes a bridged alicyclic hydrocarbon group.
- the n-valent group may have an aromatic group having 6 to 60 carbon atoms.
- the n-valent hydrocarbon group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 60 carbon atoms.
- the alicyclic hydrocarbon group includes a bridged alicyclic hydrocarbon group.
- the compound represented by the above formula (1) has a relatively low molecular weight but has high heat resistance due to the rigidity of its structure, and therefore can be used under high temperature baking conditions. Moreover, it has tertiary carbon or quaternary carbon in the molecule, and its crystallinity is suppressed, so that it is suitably used as a film forming composition for lithography that can be used for manufacturing a film for lithography.
- the resist formation composition for lithography containing the compound represented by said Formula (1) may give a favorable resist pattern shape. it can.
- the film has a relatively low molecular weight and low viscosity, even a substrate having a step (particularly, a fine space or a hole pattern) can be uniformly filled to every corner of the step and the film can be flattened.
- the composition for forming a lower layer film for lithography using the same has good embedding and planarization characteristics.
- it is a compound having a relatively high carbon concentration, high etching resistance can be imparted.
- the aromatic density is high, the refractive index is high, and coloring is suppressed by a wide range of heat treatments from low to high temperatures, so that it is also useful as a composition for forming various optical parts.
- a compound having a quaternary carbon is preferable from the viewpoint of suppressing oxidative decomposition of the compound to suppress coloring and improving heat resistance and solvent solubility.
- Optical parts include film and sheet parts, plastic lenses (prism lenses, lenticular lenses, micro lenses, Fresnel lenses, viewing angle control lenses, contrast enhancement lenses, etc.), retardation films, electromagnetic shielding films, It is useful as a prism, an optical fiber, a solder resist for flexible printed wiring, a plating resist, an interlayer insulating film for multilayer printed wiring boards, and a photosensitive optical waveguide.
- the compound represented by the above formula (1) is preferably a compound represented by the following formula (1-1) from the viewpoint of easy crosslinking and solubility in an organic solvent.
- R 0 , R 1 , R 4 , R 5 , n, p 2 to p 5 , m 4 and m 5 are as defined above, R 6 to R 7 are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, or a substituent.
- An alkenyl group having 2 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, or a thiol group, which may have R 10 to R 11 are each independently one group selected from a hydrogen atom or an allyloxyalkyl group, an acryloxyalkyl group, or a methacryloxyalkyl group;
- at least one of R 10 to R 11 is one group selected from an allyloxyalkyl group, an acryloxyalkyl group, or a methacryloxyalkyl group
- m 6 and m 7 are each independently an integer of 0 to 7, However, m 4 , m 5 , m 6 and m 7 are not 0 at the same time.
- the compound represented by the above formula (1-1) is preferably a compound represented by the following formula (1-2) from the viewpoint of further crosslinking and solubility in an organic solvent.
- R 0 , R 1 , R 6 , R 7 , R 10 , R 11 , n, p 2 to p 5 , m 6 and m 7 are as defined above
- R 8 to R 9 have the same meanings as R 6 to R 7
- R 12 to R 13 have the same meanings as R 10 to R 11
- m 8 and m 9 are each independently an integer of 0 to 8.
- m 6 , m 7 , m 8 and m 9 are not 0 at the same time.
- the compound represented by the above formula (1-1) is preferably a compound represented by the following formula (1a) from the viewpoint of raw material supply.
- R 0 to R 5 , m 2 to m 5 and n have the same meaning as described in the above formula (1).
- the compound represented by the above formula (1a) is more preferably a compound represented by the following formula (1b) from the viewpoint of solubility in an organic solvent.
- R 0 , R 1 , R 4 , R 5 , m 4 , m 5 , and n are as defined in the above formula (1), and R 6 , R 7 , R 10 , R 11 , m 6 and m 7 have the same meanings as described in the above formula (1-1).
- the compound represented by the formula (1a) is more preferably a compound represented by the following formula (1b ′) from the viewpoint of reactivity.
- R 0 , R 1 , R 4 , R 5 , m 4 , m 5 , and n are the same as those described in the above formula (1), and R 6 , R 7 , R 10 , R 11 , m 6 and m 7 have the same meanings as described in the above formula (1-1).
- the compound represented by the above formula (1b) is more preferably a compound represented by the following formula (1c) from the viewpoint of solubility in an organic solvent.
- R 0 , R 1 , R 6 to R 13 , m 6 to m 9 , and n are as defined in the above formula (1-2).
- the compound represented by the formula (1b ′) is more preferably a compound represented by the following formula (1c ′) from the viewpoint of reactivity.
- R 0 , R 1 , R 6 to R 13 , m 6 to m 9 , and n are as defined in the formula (1-2).
- X is the same as those described in the above formula (0)
- R T ' has the same meaning as R T described by the above formula (0)
- m each independently 1-6 Is an integer.
- OR 4A includes a group in which a hydrogen atom of a hydroxyl group is substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group, and a methacryloxyalkyl group.
- R ⁇ 2 >, R ⁇ 3 >, R ⁇ 4 >, R ⁇ 5 > is synonymous with what was demonstrated by the said Formula (1).
- m 2 and m 3 are integers from 0 to 6
- m 4 and m 5 are integers from 0 to 7.
- at least one selected from R 2 , R 3 , R 4 and R 5 is a group in which a hydrogen atom of a hydroxyl group is substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group M 2 , m 3 , m 4 , and m 5 are not 0 at the same time.
- R 10 , R 11 , R 12 , and R 13 have the same meanings as described in the above formula (1-2), and at least one of R 10 to R 13 is an allyloxyalkyl group, acryloxyalkyl One group selected from a group or a methacryloxyalkyl group.
- the compound represented by the formula (1) is particularly preferably a compound represented by the following formulas (BiF-1) to (BiF-10) from the viewpoint of further solubility in an organic solvent.
- R 10 to R 13 are each independently one group selected from a hydrogen atom, an allyloxyalkyl group, an acryloxyalkyl group, or a methacryloxyalkyl group, wherein R 10 to R 13 At least one of them is one group selected from an allyloxyalkyl group, an acryloxyalkyl group, and a methacryloxyalkyl group.
- R 0 , R 1 and n are as defined in the above formula (1-1), and R 10 ′ and R 11 ′ are R 10 and R described in the above formula (1-1).
- 11 and R 4 ′ and R 5 ′ each independently represents an alkyl group having 1 to 30 carbon atoms which may have a substituent, and 6 to 6 carbon atoms which may have a substituent.
- aryl groups an optionally substituted alkenyl group having 2 to 30 carbon atoms, an optionally substituted alkoxy group having 1 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, Carboxylic acid group, thiol group, hydroxyl group or a hydrogen atom of the hydroxyl group is a group substituted with one group selected from allyloxyalkyl group, acryloxyalkyl group or methacryloxyalkyl group, the alkyl group, the aryl group,
- the alkenyl group, the alkoxy Group may contain an ether bond, ketone bond or an ester bond, at least one of R 10 'and R 11' are, allyloxy group, of one selected from acryloxy group or methacryloxy group It is a group.
- n 4 ′ and m 5 ′ are integers of 0 to 8
- m 10 ′ and m 11 ′ are integers of 1 to 9
- m 4 ′ + m 10 ′ and m 4 ′ + m 11 ′ are each independently It is an integer from 1 to 9.
- R 0 for example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, triacontyl group, phenyl group, naphthyl Group, anthracene group, pyrenyl group, biphenyl group and heptacene group.
- R 4 ′ and R 5 ′ include, for example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, triacontyl group , Cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl Group, naphthyl group, anthracene group, pyrenyl group, biphenyl group, heptacene group, vinyl group,
- R 0 , R 4 ′ and R 5 ′ includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the formula (1-2),
- R 16 represents a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, carbon number A bivalent aryl group having 6 to 30 carbon atoms or a divalent alkenyl group having 2 to 30 carbon atoms.
- R 16 examples include methylene group, ethylene group, propene group, butene group, pentene group, hexene group, heptene group, octene group, nonene group, decene group, undecene group, dodecene group, triacontene group, cyclopropene group.
- Cyclobutene group cyclopentene group, cyclohexene group, cycloheptene group, cyclooctene group, cyclononene group, cyclodecene group, cycloundecene group, cyclododecene group, cyclotriacontene group, divalent norbornyl group, divalent adamantyl group, divalent Phenyl group, divalent naphthyl group, divalent anthracene group, divalent pyrene group, divalent biphenyl group, divalent heptacene group, divalent vinyl group, divalent allyl group, divalent tria A contenyl group is mentioned.
- R 16 includes isomers.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the above formula (1-2), and R 14 each independently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms.
- R 14 examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a triacontyl group, a cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, Anthracene group, pyrenyl group, bipheny
- R 14 includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 0 , R 4 ′ , R 5 ′ , m 4 ′ , m 5 ′ , m 10 ′ , and m 11 ′ are as defined above, and R 1 ′ is a group having 1 to 60 carbon atoms. .
- R 10 to R 13 have the same meanings as described in the above formula (1-2), and R 14 each independently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms.
- m 14 is an integer of 0 to 5
- 14 ′ is an integer from 0 to 4
- m 14 ′′ is an integer from 0 to 3.
- R 14 examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a triacontyl group, a cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, Anthracene group, pyrenyl group, bipheny
- R 14 includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the formula (1-2),
- R 15 represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, An aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, and a thiol group.
- R 15 for example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, triacontyl group, cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, Anthracene group, pyrenyl group, biphenyl group, heptacene group, vinyl group, allyl group, triaconty
- R 15 includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the formula (1-2).
- the compound represented by the formula (0) is more preferably a compound listed below from the viewpoint of availability of raw materials.
- R 10 to R 13 have the same meanings as described in the formula (1-2).
- the compound represented by the formula (0) is preferably a compound having the following structure from the viewpoint of etching resistance.
- R 0A has the same meaning as R Y in the formula (0)
- R 1A ′ has the same meaning as R Z in the formula (0)
- R 10 to R 13 have the same formulas (1) -2) The same meaning as described in 2).
- R 10 to R 13 have the same meanings as described in the formula (1-2).
- R 14 each independently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, or an alkenyl group having 2 to 30 carbon atoms, or 1 to 30 carbon atoms.
- An alkoxy group, a halogen atom, and a thiol group, and m 14 is an integer of 0 to 4.
- R 14 examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a triacontyl group, a cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, Anthracene group, heptacene group, vinyl group
- R 14 includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the formula (1-2),
- R 15 represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, An aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, and a thiol group.
- R 15 for example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, triacontyl group, cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, Anthracene group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethyl
- R 15 includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the formula (1-2),
- R 16 represents a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, carbon number A bivalent aryl group having 6 to 30 carbon atoms or a divalent alkenyl group having 2 to 30 carbon atoms.
- R 16 examples include methylene group, ethylene group, propene group, butene group, pentene group, hexene group, heptene group, octene group, nonene group, decene group, undecene group, dodecene group, triacontene group, cyclopropene group.
- Cyclobutene group cyclopentene group, cyclohexene group, cycloheptene group, cyclooctene group, cyclononene group, cyclodecene group, cycloundecene group, cyclododecene group, cyclotriacontene group, divalent norbornyl group, divalent adamantyl group, divalent A phenyl group, a divalent naphthyl group, a divalent anthracene group, a divalent heptacene group, a divalent vinyl group, a divalent allyl group, and a divalent triacontenyl group.
- R 16 includes isomers.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 ⁇ R 13 have the same meanings as those described by the formula (1-2)
- R 14 are each independently C 1 -C 30 linear, alkyl branched or cyclic Group, an aryl group having 6 to 30 carbon atoms, or an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, and a thiol group
- m 14 ′ is an integer of 0 to 4.
- R 14 examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a triacontyl group, a cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, Anthracene group, heptacene group, vinyl group
- R 14 includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the above formula (1-2), and R 14 each independently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms.
- R 14 examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a triacontyl group, a cyclopropyl group, Cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, Anthracene group, heptacene group, vinyl group
- R 14 includes an isomer.
- the butyl group includes an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
- R 10 to R 13 have the same meanings as described in the formula (1-2).
- compounds having a dibenzoxanthene skeleton are more preferable from the viewpoint of heat resistance.
- the compound represented by the formula (0) is more preferably a compound listed below from the viewpoint of availability of raw materials.
- R 10 to R 13 have the same meanings as described in the formula (1-2).
- compounds having a dibenzoxanthene skeleton are preferable from the viewpoint of heat resistance.
- Examples of the compound represented by the above formula (0) further include compounds represented by the following formula.
- R 0A has the same meaning as R Y in the formula (0)
- R 1A ′ has the same meaning as R Z in the formula (0)
- R 10 to R 13 have the same formulas (1) -2) The same meaning as described in 2).
- the compounds listed above are more preferably compounds having a xanthene skeleton from the viewpoint of heat resistance.
- the compound represented by the above formula (0) further includes compounds represented by the following formula:
- R 10 to R 13 have the same meanings as those described in the above formula (1-2), and R 14 , R 15 , R 16 , m 14 , and m 14 ′ have the same meanings as described in the above formulas. It is.
- the compound represented by Formula (1) in this embodiment can be appropriately synthesized by applying a known technique, and the synthesis technique is not particularly limited.
- a polyphenol compound is obtained by subjecting a biphenol, binaphthol or bianthracenol and a corresponding aldehyde or ketone to a polycondensation reaction under an acid catalyst under normal pressure, and subsequently, at least one of the polyphenol compounds. It can be obtained by introducing a hydroxyalkyl group into one phenolic hydroxyl group and introducing one group selected from an allyl group, an acryl group or a methacryl group into the hydroxy group. Moreover, it can also carry out under pressure as needed.
- the timing for introducing the hydroxyalkyl group may be not only after the condensation reaction of binaphthols with aldehydes or ketones, but also before the condensation reaction. Moreover, you may introduce
- the timing for introducing one group selected from an allyl group, an acryl group or a methacryl group may be after the hydroxyalkyl group is introduced, and the pre-stage, post-stage of the condensation reaction, or the production of the resin described later was performed. It may be introduced later.
- biphenols examples include, but are not limited to, biphenol, methyl biphenol, methoxy binaphthol, and the like. These can be used individually by 1 type or in combination of 2 or more types. Among these, it is more preferable to use biphenol from the viewpoint of stable supply of raw materials.
- binaphthols examples include, but are not limited to, binaphthol, methyl binaphthol, methoxy binaphthol, and the like. These can be used alone or in combination of two or more. Among these, it is more preferable to use binaphthol from the viewpoint of increasing the carbon atom concentration and improving the heat resistance.
- aldehydes examples include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, Examples include naphthaldehyde, anthracene carbaldehyde, phenanthrene carbaldehyde, pyrene carbaldehyde, furfural, and the like, but are not limited thereto.
- benzaldehyde phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, cyclohexylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracene Carbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde and furfural are preferably used.
- benzaldehyde hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, Hexyl benzaldehyde, biphenyl aldehyde, naphthaldehyde, anthracene carbaldehyde, phenanthrene carbaldehyde, pyrene carbaldehyde, it is preferable to use a furfural.
- ketones examples include acetone, methyl ethyl ketone, cyclobutanone, cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone, adamantanone, fluorenone, benzofluorenone, acenaphthenequinone, acenaphthenone, anthraquinone, acetophenone, diacetylbenzene.
- the acid catalyst used in the above reaction can be appropriately selected from known ones and is not particularly limited.
- inorganic acids and organic acids are widely known.
- inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, hydrobromic acid, hydrofluoric acid; oxalic acid, malonic acid, succinic acid, Adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid, Organic acids such as naphthalenedisulfonic acid; Lewis acids such as zinc chloride, aluminum chloride, iron chloride, and boron trifluoride; solid acids such as silicotungstic acid, phosphotungstic acid,
- organic acids and solid acids are preferred from the viewpoint of production, and hydrochloric acid or sulfuric acid is more preferred from the viewpoint of production such as availability and ease of handling.
- an acid catalyst 1 type can be used individually or in combination of 2 or more types.
- the amount of the acid catalyst used can be appropriately set according to the raw material to be used, the type of the catalyst, and further the reaction conditions, and is not particularly limited, but is 0.01 to 100 parts by mass with respect to 100 parts by mass of the reaction raw material. It is preferable that
- a reaction solvent may be used.
- the reaction solvent is not particularly limited as long as the reaction of aldehydes or ketones to be used with biphenols, binaphthols or bianthracenediol proceeds, and may be appropriately selected from known ones. it can.
- Examples of the reaction solvent include water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, or a mixed solvent thereof.
- a solvent can be used individually by 1 type or in combination of 2 or more types.
- the amount of these reaction solvents used can be appropriately set according to the types of raw materials and catalysts to be used, reaction conditions, and the like, and is not particularly limited, but is 0 to 2000 parts by mass with respect to 100 parts by mass of the reaction raw materials. A range is preferable.
- the reaction temperature in the above reaction can be appropriately selected according to the reactivity of the reaction raw material, and is not particularly limited, but is usually in the range of 10 to 200 ° C.
- a higher reaction temperature is preferable, and specifically, a range of 60 to 200 ° C. is preferable.
- the reaction method can be appropriately selected from known methods, and is not particularly limited. However, biphenols, binaphthols or bianthracenediol, aldehydes or ketones, a method of charging a catalyst at once, biphenols And a method in which binaphthols, bianthracenediol, aldehydes or ketones are dropped in the presence of a catalyst.
- the obtained compound can be isolated according to a conventional method, and is not particularly limited. For example, in order to remove unreacted raw materials, catalysts, etc. existing in the system, a general method such as raising the temperature of the reaction vessel to 130 to 230 ° C. and removing volatile components at about 1 to 50 mmHg is adopted. As a result, the target compound can be isolated.
- reaction conditions 1 mol to an excess of biphenols, binaphthols or bianthracenediol, and 0.001 to 1 mol of an acid catalyst are used with respect to 1 mol of an aldehyde or a ketone,
- the reaction may be carried out at about 150 ° C. for about 20 minutes to 100 hours.
- the target product can be isolated by a known method.
- the reaction solution is concentrated, pure water is added to precipitate the reaction product, cooled to room temperature, filtered and separated, and the resulting solid is filtered and dried, followed by column chromatography.
- the product represented by the above formula (1), which is the target product can be obtained by separating and purifying from the by-product by evaporating, evaporating the solvent, filtering and drying.
- a method of introducing a hydroxyalkyl group into at least one phenolic hydroxyl group of a polyphenol compound and introducing an allyl, acryl or methacryl group into the hydroxy group is also known.
- a hydroxyalkyl group can be introduced into at least one phenolic hydroxyl group of the compound as follows.
- a hydroxyalkyl group can also be introduced into a phenolic hydroxyl group via an oxyalkyl group.
- a hydroxyalkyloxyalkyl group or a hydroxyalkyloxyalkyloxyalkyl group is introduced.
- a compound for introducing a hydroxyalkyl group can be synthesized or easily obtained by a known method.
- chloroethanol bromoethanol, 2-chloroethyl acetate, 2-bromoethyl acetate, 2-iodoethyl acetate, ethylene oxide , Propylene oxide, butylene oxide, ethylene carbonate, propylene carbonate, and butylene carbonate, but are not particularly limited thereto.
- the compound is dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- metal alkoxide sodium methoxide, sodium ethoxide, potassium methoxide, alkali metal such as potassium ethoxide or alkaline earth metal alkoxide
- metal hydroxide sodium hydroxide, alkali metal such as potassium hydroxide
- alkaline earth metal carbonate etc.
- alkali metal such as sodium hydrogen carbonate, potassium hydrogen carbonate, or alkaline earth hydrogen carbonate
- amines for example, tertiary amines (trialkylamines such as triethylamine, N, N -Aromatic tertiary amines such as dimethylaniline, heterocyclic
- reaction solution is neutralized with an acid and added to distilled water to precipitate a white solid, and then the separated solid is washed with distilled water or the solvent is evaporated to dryness.
- the compound in which the hydrogen atom of the hydroxyl group is substituted with a hydroxyalkylene group can be obtained by washing with distilled water if necessary and drying.
- a hydroxyethyl group is introduced by deacylation after the acetoxyethyl group is introduced.
- ethylene carbonate, propylene carbonate, or butylene carbonate is used, a hydroxyalkyl group is introduced by adding an alkylene carbonate to cause a decarboxylation reaction.
- an allyl, acrylic or methacrylic group can be introduced into at least one hydroxy group of the compound as follows.
- a method for introducing an allyl, acrylic or methacrylic group into a hydroxy group is also known.
- allyl, acrylic or methacrylic groups can be synthesized or easily obtained by known methods such as allyl chloride, allyl bromide, allyl iodide, acrylic acid, acrylic acid chloride, methacrylic acid, methacrylic acid. Although a chloride is mentioned, it does not specifically limit to these.
- the compound is dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- the reaction is carried out at 20 to 150 ° C. for 6 to 72 hours at normal pressure in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide and the like.
- the reaction solution is neutralized with an acid and added to distilled water to precipitate a white solid, and then the separated solid is washed with distilled water, or the solvent is evaporated to dryness and washed with distilled water as necessary.
- a compound in which the hydrogen atom of the hydroxy group is substituted with an allyl, acryl or methacryl group can be obtained.
- a group substituted with an allyl, acrylic or methacryl group reacts in the presence of a radical or acid / alkali, and the solubility in an acid, alkali or organic solvent used in a coating solvent or developer changes.
- the group substituted with an allyl, acryl or methacryl group may have a property of causing a chain reaction in the presence of a radical or an acid / alkali in order to enable pattern formation with higher sensitivity and higher resolution. preferable.
- the compound represented by the formula (1) can be used as it is as a composition (hereinafter also simply referred to as “composition”) used for forming a film for lithography or forming an optical component.
- a resin obtained using the compound represented by the formula (1) as a monomer can also be used as a composition.
- the resin is obtained, for example, by reacting the compound represented by the formula (1) with a compound having a crosslinking reactivity.
- Examples of the resin obtained using the compound represented by the formula (1) as a monomer include those having a structure represented by the following formula (3). That is, the composition in the present embodiment may contain a resin having a structure represented by the following formula (3).
- L has an optionally substituted alkylene group having 1 to 30 carbon atoms, an optionally substituted arylene group having 6 to 30 carbon atoms, and a substituent.
- the alkylene group, the arylene group, and the alkoxylene group may contain an ether bond, a ketone bond, or an ester bond.
- the alkylene group and alkoxylene group may be a linear, branched or cyclic group.
- R 0 , R 1 , R 2 to R 5 , m 2 and m 3 , m 4 and m 5 , p 2 to p 5 , and n are as defined in the formula (1).
- m 2 , m 3 , m 4 and m 5 are not 0 at the same time, and at least one of R 2 to R 5 is a hydrogen atom of a hydroxyl group is an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group. A group substituted with one group selected from the group.
- the resin in the present embodiment is obtained by reacting the compound represented by the above formula (1) with a compound having crosslinking reactivity.
- a compound having a crosslinking reactivity a known compound can be used without particular limitation as long as the compound represented by the formula (1) can be oligomerized or polymerized. Specific examples thereof include, but are not limited to, aldehydes, ketones, carboxylic acids, carboxylic acid halides, halogen-containing compounds, amino compounds, imino compounds, isocyanates, unsaturated hydrocarbon group-containing compounds, and the like.
- the resin having the structure represented by the formula (3) include, for example, a condensation reaction of the compound represented by the formula (1) with an aldehyde and / or a ketone having a crosslinking reactivity.
- a novolak resin may be used.
- aldehyde for example, formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde
- examples thereof include, but are not limited to, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde, and furfural.
- ketones include the aforementioned ketones. Among these, formaldehyde is more preferable. In addition, these aldehydes and / or ketones can be used individually by 1 type or in combination of 2 or more types.
- the amount of the aldehyde and / or ketone used is not particularly limited, but is preferably 0.2 to 5 mol, more preferably 1 mol with respect to 1 mol of the compound represented by the formula (1). 0.5 to 2 moles.
- an acid catalyst can be used.
- the acid catalyst used here can be appropriately selected from known ones and is not particularly limited.
- As such an acid catalyst inorganic acids and organic acids are widely known.
- inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, hydrobromic acid, hydrofluoric acid; oxalic acid, malonic acid, succinic acid, Adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid, Organic acids such as naphthalenedisulfonic acid; Lewis acids such as zinc chloride, aluminum chloride, iron chloride, and boron trifluoride; solid acids such as silicotungstic acid, phosphotungstic acid, silicomolybdic acid, and phosphomolybdic acid However, it is not particularly limited to these.
- an organic acid and a solid acid are preferable from the viewpoint of production, and hydrochloric acid or sulfuric acid is preferable from the viewpoint of production such as availability and ease of handling.
- an acid catalyst 1 type can be used individually or in combination of 2 or more types.
- the amount of the acid catalyst used can be appropriately set according to the raw material to be used, the type of the catalyst, and further the reaction conditions, and is not particularly limited, but is 0.01 to 100 parts by mass with respect to 100 parts by mass of the reaction raw material. It is preferable that However, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, norbornadiene, 5-vinylnorborna-2-ene, ⁇ -pinene, ⁇ -pinene In the case of a copolymerization reaction with a compound having a nonconjugated double bond such as limonene, aldehydes are not necessarily required.
- a reaction solvent can be used in the condensation reaction between the compound represented by the formula (1) and the aldehyde and / or ketone.
- the reaction solvent in this polycondensation can be appropriately selected from known solvents and is not particularly limited. Examples thereof include water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, and mixed solvents thereof. Can be mentioned.
- a solvent can be used individually by 1 type or in combination of 2 or more types.
- the amount of these solvents used can be appropriately set according to the types of raw materials and catalysts used, and further the reaction conditions, and is not particularly limited, but is in the range of 0 to 2000 parts by mass with respect to 100 parts by mass of the reactive raw materials. It is preferable that Furthermore, the reaction temperature can be appropriately selected according to the reactivity of the reaction raw material, and is not particularly limited, but is usually in the range of 10 to 200 ° C.
- the reaction method can be appropriately selected from known methods, and is not particularly limited.
- reaction method may be a method in which the compound represented by the above formula (1), the aldehyde and / or ketone, and a catalyst are charged together, The method of dripping the compound represented by the said Formula (1), an aldehyde, and / or ketones in catalyst presence is mentioned.
- the obtained compound can be isolated according to a conventional method, and is not particularly limited.
- a general method such as raising the temperature of the reaction vessel to 130 to 230 ° C. and removing volatile components at about 1 to 50 mmHg is adopted.
- the novolak resin as the target product can be isolated.
- the resin having the structure represented by the formula (3) may be a homopolymer of the compound represented by the formula (1), but is a copolymer with other phenols. May be.
- the copolymerizable phenols include phenol, cresol, dimethylphenol, trimethylphenol, butylphenol, phenylphenol, diphenylphenol, naphthylphenol, resorcinol, methylresorcinol, catechol, butylcatechol, methoxyphenol, methoxyphenol, Although propylphenol, pyrogallol, thymol, etc. are mentioned, it is not specifically limited to these.
- the resin having the structure represented by the formula (3) may be copolymerized with a polymerizable monomer other than the above-described phenols.
- the copolymerization monomer include naphthol, methylnaphthol, methoxynaphthol, dihydroxynaphthalene, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene.
- the resin having the structure represented by the formula (3) is a binary or more (for example, a quaternary system) copolymer of the compound represented by the formula (1) and the above-described phenols. Even if it is a binary or more (for example, 2-4 quaternary) copolymer of the compound represented by the formula (1) and the above-mentioned copolymerization monomer, it is represented by the formula (1). It may be a ternary or more (for example, ternary to quaternary) copolymer of the above compound, the above-mentioned phenols, and the above-mentioned copolymerization monomer.
- the molecular weight of the resin having the structure represented by the formula (3) is not particularly limited, but the polystyrene equivalent weight average molecular weight (Mw) is preferably 500 to 30,000, more preferably 750 to 20, 000. Further, from the viewpoint of enhancing the crosslinking efficiency and suppressing the volatile components in the baking, the resin having the structure represented by the formula (3) has a dispersity (weight average molecular weight Mw / number average molecular weight Mn) of 1.2. It is preferably within the range of ⁇ 7. In addition, said Mw and Mn can be calculated
- the resin having the structure represented by the formula (3) is preferably highly soluble in a solvent from the viewpoint of easier application of a wet process. More specifically, when 1-methoxy-2-propanol (PGME) and / or propylene glycol monomethyl ether acetate (PGMEA) is used as a solvent, the solubility in the solvent is preferably 10% by mass or more.
- the solubility in PGM and / or PGMEA is defined as “resin mass ⁇ (resin mass + solvent mass) ⁇ 100 (mass%)”.
- the solubility of the resin in PGMEA is “10 mass% or more”, and when it is not dissolved, it is “less than 10 mass%”.
- the compound (0) in the present embodiment is preferably a compound represented by the following formula (2) from the viewpoint of heat resistance and solvent solubility.
- R 0A is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms.
- R 1A is an n A valent group having 1 to 60 carbon atoms or a single bond
- R 2A is each independently a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms which may have a substituent, and 6 to 30 carbon atoms which may have a substituent.
- An acid group, a thiol group, a hydroxyl group or a hydrogen atom of a hydroxyl group is a group substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group or a methacryloxyalkyl group, the alkyl group, the aryl group, alkenyl group, the alkoxy group, an ether bond, may contain ketone or ester bond, wherein at least one hydrogen atom of the hydroxyl group of R 2A Ariruo Shiarukiru containing group, a single substituted group with a group selected from acryloxy group or methacryloxy group.
- n A is an integer of 1 to 4, where, in formula (2), when n A is an integer of 2 or more, The structural formulas in n A [] may be the same or different.
- X A each independently represents an oxygen atom, a sulfur atom, or no bridge.
- X A because there is a tendency to exhibit excellent heat resistance, it is preferable that an oxygen atom or a sulfur atom, more preferably oxygen atom.
- X A in terms of solubility, it is preferable that the non-crosslinked.
- m 2A is each independently an integer of 0 to 6. However, at least one m 2A is an integer of 1 to 6.
- q A is each independently 0 or 1.
- An alkanepropyl group having 2 to 60 carbon atoms, and when n 4, an alkanetetrayl group having 3 to 60 carbon atoms.
- Examples of the n-valent group include those having a linear hydrocarbon group, a branched hydrocarbon group, or an alicyclic hydrocarbon group.
- the alicyclic hydrocarbon group includes a bridged alicyclic hydrocarbon group.
- the n-valent group may have an aromatic group having 6 to 60 carbon atoms.
- the n-valent hydrocarbon group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 60 carbon atoms.
- the alicyclic hydrocarbon group includes a bridged alicyclic hydrocarbon group.
- the n-valent hydrocarbon group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 30 carbon atoms.
- the alicyclic hydrocarbon group includes a bridged alicyclic hydrocarbon group.
- the compound represented by the above formula (2) has a relatively low molecular weight, but has high heat resistance due to the rigidity of the structure, and thus can be used under high temperature baking conditions. Moreover, it has tertiary carbon or quaternary carbon in the molecule, the crystallinity is suppressed, and it is suitably used as a film forming composition for lithography that can be used for film production for lithography.
- the resist formation composition for lithography containing the compound represented by said Formula (2) may give a favorable resist pattern shape. it can.
- the film has a relatively low molecular weight and low viscosity, even a substrate having a step (particularly, a fine space or a hole pattern) can be uniformly filled to every corner of the step and the film can be flattened.
- the composition for forming a lower layer film for lithography using the same has good embedding and planarization characteristics.
- it is a compound having a relatively high carbon concentration, high etching resistance can be imparted.
- the aromatic density is high, the refractive index is high, and coloring is suppressed by a wide range of heat treatments from low to high temperatures, so that it is also useful as a composition for forming various optical parts.
- a compound having a quaternary carbon is preferable from the viewpoint of suppressing oxidative decomposition of the compound, suppressing coloring, and improving heat resistance and solvent solubility.
- Optical parts include film and sheet parts, plastic lenses (prism lenses, lenticular lenses, micro lenses, Fresnel lenses, viewing angle control lenses, contrast enhancement lenses, etc.), retardation films, electromagnetic shielding films, It is useful as a prism, an optical fiber, a solder resist for flexible printed wiring, a plating resist, an interlayer insulating film for multilayer printed wiring boards, and a photosensitive optical waveguide.
- the compound represented by the above formula (2) is preferably a compound represented by the following formula (2-1) from the viewpoint of easy crosslinking and solubility in an organic solvent.
- R 0A , R 1A , n A and q A and X A have the same meaning as described in the above formula (2).
- R 3A is a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, substituted
- An alkenyl group having 2 to 30 carbon atoms which may have a group, a halogen atom, a nitro group, an amino group, a carboxylic acid group, or a thiol group, and may be the same or different in the same naphthalene ring or benzene ring. May be.
- R 4A is each independently one group selected from a hydrogen atom or an allyloxyalkyl group, an acryloxyalkyl group, or a methacryloxyalkyl group, wherein at least one of R 4A is an allyloxyalkyl group,
- m 6A is each independently an integer of 0 to 5.
- R 4A is an acid dissociable group. It is.
- R At least one of 4A is a hydrogen atom.
- the compound represented by the above formula (2-1) is preferably a compound represented by the following formula (2a) from the viewpoint of raw material supply.
- the compound represented by the formula (2-1) is more preferably a compound represented by the following formula (2b) from the viewpoint of solubility in an organic solvent.
- X A , R 0A , R 1A , R 3A , R 4A , m 6A and n A are as defined in the above formula (2-1).
- the compound represented by the above formula (2-1) is more preferably a compound represented by the following formula (2c) from the viewpoint of solubility in an organic solvent.
- the compound represented by the above formula (2) has the following formulas (BisN-1) to (BisN-4), (XBisN-1) to (XBisN-3), ( A compound represented by (BiN-1) to (BiN-4) or (XBiN-1) to (XBiN-3) is particularly preferable.
- the compound represented by formula (2) in the present embodiment can be appropriately synthesized by applying a known technique, and the synthesis technique is not particularly limited.
- a polyphenol compound is obtained by polycondensation reaction of phenols, naphthols and corresponding aldehydes or ketones under an acid catalyst under normal pressure, and then at least one phenolic hydroxyl group of the polyphenol compound. It can be obtained by introducing a hydroxyalkyl group and introducing one group selected from an allyl group, an acryl group or a methacryl group into the hydroxy group. Moreover, it can also carry out under pressure as needed.
- the timing for introducing the hydroxyalkyl group may be not only after the condensation reaction of phenols, naphthols and aldehydes or ketones, but also before the condensation reaction. Moreover, you may introduce
- the timing for introducing one group selected from an allyl group, an acryl group or a methacryl group may be after the hydroxyalkyl group is introduced, and the pre-stage, post-stage of the condensation reaction, or the production of the resin described later was performed. It may be introduced later.
- the naphthols are not particularly limited, and examples thereof include naphthol, methyl naphthol, methoxy naphthol, naphthalene diol, etc.
- naphthalene diol is preferably used from the viewpoint that a xanthene structure can be easily formed. .
- the phenols are not particularly limited, and examples thereof include phenol, methylphenol, methoxybenzene, catechol, resorcinol, hydroquinone, and trimethylhydroquinone.
- aldehydes examples include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, Examples include naphthaldehyde, anthracene carbaldehyde, phenanthrene carbaldehyde, pyrene carbaldehyde, furfural, and the like, but are not limited thereto.
- benzaldehyde phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, cyclohexylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracene Carbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde and furfural are preferably used.
- benzaldehyde hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, Hexyl benzaldehyde, biphenyl aldehyde, naphthaldehyde, anthracene carbaldehyde, phenanthrene carbaldehyde, pyrene carbaldehyde, it is preferable to use a furfural.
- ketones examples include acetone, methyl ethyl ketone, cyclobutanone, cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone, adamantanone, fluorenone, benzofluorenone, acenaphthenequinone, acenaphthenone, anthraquinone, acetophenone, diacetylbenzene.
- the acid catalyst used in the above reaction can be appropriately selected from known ones and is not particularly limited.
- the acid catalyst can be appropriately selected from known inorganic acids and organic acids.
- inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, hydrobromic acid and hydrofluoric acid; oxalic acid, formic acid, p-toluenesulfone Acids, organic acids such as methanesulfonic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid, naphthalenedisulfonic acid; Lewis acids such as zinc chloride, aluminum chloride, iron chloride, boron trifluoride; or Solid acids such as silicotungstic acid, phosphotungstic acid, silicomolybdic acid or phosphomolybdic acid can be mentioned.
- hydrochloric acid or sulfuric acid from the viewpoint of production such as availability and
- a reaction solvent may be used.
- the reaction solvent is not particularly limited as long as the reaction between the aldehyde or ketone to be used and naphthol proceeds, but for example, water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane or a mixed solvent thereof is used. Can do.
- the amount of the reaction solvent is not particularly limited and is, for example, in the range of 0 to 2000 parts by mass with respect to 100 parts by mass of the reaction raw material.
- the reaction temperature is not particularly limited and can be appropriately selected according to the reactivity of the reaction raw material, but is preferably in the range of 10 to 200 ° C. From the viewpoint of synthesizing the compound represented by the formula (2) in the present embodiment with good selectivity, the temperature is preferably lower and more preferably in the range of 10 to 60 ° C.
- the reaction method is not particularly limited, and examples thereof include a method in which naphthols, aldehydes or ketones, and a catalyst are charged all at once, and a method in which naphthols, aldehydes, or ketones are dropped in the presence of a catalyst.
- the temperature of the reaction kettle can be raised to 130-230 ° C., and volatile matter can be removed at about 1-50 mmHg. .
- the amount of the raw material is not particularly limited. For example, 2 mol to an excess amount of naphthols and the like and 0.001 to 1 mol of an acid catalyst are used with respect to 1 mol of aldehydes or ketones, and at normal pressure, 20 mol.
- the reaction is preferably carried out at ⁇ 60 ° C. for about 20 minutes to 100 hours.
- the target product is isolated by a known method.
- the method for isolating the target product is not particularly limited.
- the reaction solution is concentrated, pure water is added to precipitate the reaction product, and after cooling to room temperature, the product is separated by filtration.
- the product can be filtered and dried, and then separated and purified from by-products by column chromatography, followed by solvent distillation, filtration and drying to isolate the target compound.
- a method of introducing a hydroxyalkyl group into at least one phenolic hydroxyl group of a polyphenol compound and introducing an allyl, acryl or methacryl group into the hydroxy group is also known.
- a hydroxyalkyl group can be introduced into at least one phenolic hydroxyl group of the compound as follows.
- a hydroxyalkyl group can also be introduced into a phenolic hydroxyl group via an oxyalkyl group.
- a hydroxyalkyloxyalkyl group or a hydroxyalkyloxyalkyloxyalkyl group is introduced.
- a compound for introducing a hydroxyalkyl group can be synthesized or easily obtained by a known method.
- chloroethanol bromoethanol, 2-chloroethyl acetate, 2-bromoethyl acetate, 2-iodoethyl acetate, ethylene oxide , Propylene oxide, butylene oxide, ethylene carbonate, propylene carbonate, and butylene carbonate, but are not particularly limited thereto.
- the compound is dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- metal alkoxide sodium methoxide, sodium ethoxide, potassium methoxide, alkali metal such as potassium ethoxide or alkaline earth metal alkoxide
- metal hydroxide sodium hydroxide, alkali metal such as potassium hydroxide
- alkaline earth metal carbonate etc.
- alkali metal such as sodium hydrogen carbonate, potassium hydrogen carbonate, or alkaline earth hydrogen carbonate
- amines for example, tertiary amines (trialkylamines such as triethylamine, N, N -Aromatic tertiary amines such as dimethylaniline, heterocyclic
- reaction solution is neutralized with an acid and added to distilled water to precipitate a white solid, and then the separated solid is washed with distilled water or the solvent is evaporated to dryness.
- the compound in which the hydrogen atom of the hydroxyl group is substituted with a hydroxyalkylene group can be obtained by washing with distilled water if necessary and drying.
- a hydroxyethyl group is introduced by deacylation after the acetoxyethyl group is introduced.
- ethylene carbonate, propylene carbonate, or butylene carbonate is used, a hydroxyalkyl group is introduced by adding an alkylene carbonate to cause a decarboxylation reaction.
- an allyl, acrylic or methacrylic group can be introduced into at least one hydroxy group of the compound as follows.
- a method for introducing an allyl, acrylic or methacrylic group into the hydroxy group is also known.
- allyl, acrylic or methacrylic groups can be synthesized or easily obtained by known methods such as allyl chloride, allyl bromide, allyl iodide, acrylic acid, acrylic acid chloride, methacrylic acid, methacrylic acid. Although a chloride is mentioned, it does not specifically limit to these.
- the compound is dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate or the like.
- the reaction is carried out at 20 to 150 ° C. for 6 to 72 hours at normal pressure in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide and the like.
- the reaction solution is neutralized with an acid and added to distilled water to precipitate a white solid, and then the separated solid is washed with distilled water, or the solvent is evaporated to dryness and washed with distilled water as necessary.
- a compound in which the hydrogen atom of the hydroxy group is substituted with an allyl, acryl or methacryl group can be obtained.
- a group substituted with an allyl, acrylic or methacryl group reacts in the presence of a radical or acid / alkali, and the solubility in an acid, alkali or organic solvent used in a coating solvent or developer changes.
- the group substituted with an allyl, acryl or methacryl group may have a property of causing a chain reaction in the presence of a radical or an acid / alkali in order to enable pattern formation with higher sensitivity and higher resolution. preferable.
- the compound represented by the formula (2) can be used as it is as a film forming composition for lithography or a composition used for forming optical parts.
- a resin obtained using the compound represented by the formula (2) as a monomer can be used as a composition.
- the resin is obtained, for example, by reacting the compound represented by the formula (2) with a compound having a crosslinking reactivity.
- Examples of the resin obtained using the compound represented by the formula (2) as a monomer include those having a structure represented by the following formula (4). That is, the composition in the present embodiment may contain a resin having a structure represented by the following formula (4).
- L has an optionally substituted alkylene group having 1 to 30 carbon atoms, an optionally substituted arylene group having 6 to 30 carbon atoms, and a substituent.
- the alkylene group, the arylene group, and the alkoxylene group may contain an ether bond, a ketone bond, or an ester bond.
- the alkylene group and alkoxylene group may be a linear, branched or cyclic group.
- R 0A , R 1A , R 2A , m 2A , n A , q A and X A are the same as those in the formula (2), However, when n A is an integer of 2 or more, the structural formulas in n A [] may be the same or different, and at least one m 2A is an integer of 1 to 6, and R 2A At least one of these includes a group in which a hydrogen atom of a hydroxyl group is substituted with one group selected from an allyloxyalkyl group, an acryloxyalkyl group, and a methacryloxyalkyl group.
- the resin in the present embodiment is obtained by reacting the compound represented by the above formula (2) with a compound having crosslinking reactivity.
- a known compound can be used without particular limitation as long as the compound represented by the formula (2) can be oligomerized or polymerized. Specific examples thereof include, but are not limited to, aldehydes, ketones, carboxylic acids, carboxylic acid halides, halogen-containing compounds, amino compounds, imino compounds, isocyanates, unsaturated hydrocarbon group-containing compounds, and the like.
- the resin having the structure represented by the formula (4) include, for example, a condensation reaction of the compound represented by the formula (2) with an aldehyde and / or a ketone having a crosslinking reactivity.
- a novolak resin may be used.
- aldehyde for example, formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde
- examples thereof include, but are not limited to, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde, and furfural.
- ketones include the aforementioned ketones. Among these, formaldehyde is more preferable. In addition, these aldehydes and / or ketones can be used individually by 1 type or in combination of 2 or more types.
- the amount of the aldehyde and / or ketone used is not particularly limited, but is preferably 0.2 to 5 mol, more preferably 1 mol with respect to 1 mol of the compound represented by the formula (2). 0.5 to 2 moles.
- an acid catalyst can be used in the condensation reaction between the compound represented by the formula (2) and the aldehyde and / or ketone.
- the acid catalyst used here can be appropriately selected from known ones and is not particularly limited.
- As such an acid catalyst inorganic acids and organic acids are widely known.
- inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, hydrobromic acid, hydrofluoric acid; oxalic acid, malonic acid, succinic acid, Adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid, Organic acids such as naphthalenedisulfonic acid; Lewis acids such as zinc chloride, aluminum chloride, iron chloride, and boron trifluoride; solid acids such as silicotungstic acid, phosphotungstic acid, silicomolybdic acid, and phosphomolybdic acid However, it is not particularly limited to these.
- an organic acid or a solid acid is preferable from the viewpoint of production, and hydrochloric acid or sulfuric acid is preferable from the viewpoint of production such as availability and ease of handling.
- an acid catalyst 1 type can be used individually or in combination of 2 or more types.
- the amount of the acid catalyst used can be appropriately set according to the raw material to be used, the type of the catalyst, and further the reaction conditions, and is not particularly limited, but is 0.01 to 100 parts by mass with respect to 100 parts by mass of the reaction raw material. It is preferable that However, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, norbornadiene, 5-vinylnorborna-2-ene, ⁇ -pinene, ⁇ -pinene In the case of a copolymerization reaction with a compound having a nonconjugated double bond such as limonene, aldehydes are not necessarily required.
- a reaction solvent can be used in the condensation reaction between the compound represented by the formula (2) and the aldehyde and / or ketone.
- the reaction solvent in this polycondensation can be appropriately selected from known solvents and is not particularly limited. Examples thereof include water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, and mixed solvents thereof. Can be mentioned.
- a solvent can be used individually by 1 type or in combination of 2 or more types.
- the amount of these solvents used can be appropriately set according to the types of raw materials and catalysts used, and further the reaction conditions, and is not particularly limited, but is in the range of 0 to 2000 parts by mass with respect to 100 parts by mass of the reactive raw materials. It is preferable that Furthermore, the reaction temperature can be appropriately selected according to the reactivity of the reaction raw material, and is not particularly limited, but is usually in the range of 10 to 200 ° C.
- the reaction method can be appropriately selected from known methods and is not particularly limited.
- reaction method may be a method in which the compound represented by the above formula (2), the aldehyde and / or ketone, and a catalyst are charged together, The method of dripping the compound represented by the said Formula (2), an aldehyde, and / or ketones in catalyst presence is mentioned.
- the obtained compound can be isolated according to a conventional method, and is not particularly limited.
- a general method such as raising the temperature of the reaction vessel to 130 to 230 ° C. and removing volatile components at about 1 to 50 mmHg is adopted.
- the novolak resin as the target product can be isolated.
- the resin having the structure represented by the formula (4) may be a homopolymer of the compound represented by the formula (2), but is a copolymer with other phenols. May be.
- the copolymerizable phenols include phenol, cresol, dimethylphenol, trimethylphenol, butylphenol, phenylphenol, diphenylphenol, naphthylphenol, resorcinol, methylresorcinol, catechol, butylcatechol, methoxyphenol, methoxyphenol, Although propylphenol, pyrogallol, thymol, etc. are mentioned, it is not specifically limited to these.
- the resin having the structure represented by the formula (4) may be copolymerized with a polymerizable monomer other than the above-described phenols.
- the copolymerization monomer include naphthol, methylnaphthol, methoxynaphthol, dihydroxynaphthalene, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene.
- the resin having the structure represented by the above formula (4) is a binary or more (for example, 2-4 quaternary) copolymer of the compound represented by the above formula (2) and the above-described phenols. Even in the case of a binary or more (for example, 2-4 quaternary) copolymer of the compound represented by the formula (2) and the above-described copolymerization monomer, it is represented by the formula (2). It may be a ternary or more (for example, ternary to quaternary) copolymer of the above compound, the above-mentioned phenols, and the above-mentioned copolymerization monomer.
- the molecular weight of the resin having the structure represented by the formula (4) is not particularly limited, but the polystyrene-equivalent weight average molecular weight (Mw) is preferably 500 to 30,000, more preferably 750 to 20,000. Further, from the viewpoint of increasing the crosslinking efficiency and suppressing the volatile components in the baking, the resin having the structure represented by the formula (4) has a dispersity (weight average molecular weight Mw / number average molecular weight Mn) of 1.2. It is preferably within the range of ⁇ 7. In addition, said Mw and Mn can be calculated
- the resin having the structure represented by the formula (4) is preferably highly soluble in a solvent from the viewpoint of easier application of a wet process. More specifically, when 1-methoxy-2-propanol (PGME) and / or propylene glycol monomethyl ether acetate (PGMEA) is used as a solvent, the solubility in the solvent is preferably 10% by mass or more.
- the solubility in PGM and / or PGMEA is defined as “resin mass ⁇ (resin mass + solvent mass) ⁇ 100 (mass%)”.
- the solubility of the resin in PGMEA is “10 mass% or more”, and when it is not dissolved, it is “less than 10 mass%”.
- the purification method of the compound and / or resin in the present embodiment is represented by the compound represented by the formula (1), the resin obtained by using the compound represented by the formula (1) as a monomer, and the formula (2). And a step of dissolving one or more selected from resins obtained using the compound represented by the formula (2) as a monomer in a solvent to obtain a solution (S), and the obtained solution (S)
- the resin is a resin obtained by a reaction between the compound represented by the formula (1) and / or the compound represented by the formula (2) and a compound having a crosslinking reactivity. preferable.
- the purification method of the present embodiment the content of various metals that can be contained as impurities in the compound or resin having the specific structure described above can be reduced. More specifically, in the purification method of the present embodiment, the compound and / or the resin is dissolved in an organic solvent that is arbitrarily immiscible with water to obtain a solution (S), and the solution (S) is further obtained.
- the extraction treatment can be performed in contact with an acidic aqueous solution. Thereby, after transferring the metal content contained in the solution (S) to the aqueous phase, the organic phase and the aqueous phase can be separated to obtain a compound and / or resin having a reduced metal content.
- the compounds and / or resins used in the purification method of this embodiment may be used alone or in combination of two or more.
- the said compound and resin may contain various surfactant, various crosslinking agents, various acid generators, various stabilizers, etc.
- the solvent that is not arbitrarily miscible with water used in the purification method of the present embodiment is not particularly limited, but an organic solvent that can be safely applied to a semiconductor manufacturing process is preferable, and specifically, solubility in water at room temperature. Is less than 30%, more preferably less than 20%, and even more preferably less than 10%.
- the amount of the organic solvent used is preferably 1 to 100 times by mass with respect to the total amount of the compound to be used and the resin.
- toluene, 2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate and ethyl acetate are preferable, methyl isobutyl ketone, ethyl acetate, cyclohexanone and propylene glycol monomethyl ether acetate are more preferable, and methyl More preferred are isobutyl ketone and ethyl acetate. Methyl isobutyl ketone, ethyl acetate, etc.
- solvents are removed when the solvent is industrially distilled off or dried because the above compound and the resin containing the compound as a constituent component have a relatively high saturation solubility and a relatively low boiling point. It is possible to reduce the load in the process.
- These solvents can be used alone or in combination of two or more.
- the acidic aqueous solution used in the purification method of the present embodiment is appropriately selected from aqueous solutions in which generally known organic compounds or inorganic compounds are dissolved in water.
- the acidic aqueous solution include, but are not limited to, for example, a mineral acid aqueous solution in which a mineral acid such as hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid is dissolved in water; acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid
- acidic aqueous solutions can be used alone or in combination of two or more.
- one or more mineral acid aqueous solutions selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid, or acetic acid, propionic acid, succinic acid, malonic acid, succinic acid, fumaric acid, maleic acid,
- One or more organic acid aqueous solutions selected from the group consisting of tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid and trifluoroacetic acid are preferred, and sulfuric acid, nitric acid, acetic acid, oxalic acid,
- An aqueous solution of carboxylic acid such as tartaric acid and citric acid is more preferable
- an aqueous solution of sulfuric acid, succinic acid, tartaric acid and citric acid is more preferable
- the water used here is preferably water having a low metal content, such as ion-exchanged water, in accordance with the purpose of the purification method of the present embodiment.
- the pH of the acidic aqueous solution used in the purification method of the present embodiment is not particularly limited, but it is preferable to adjust the acidity of the aqueous solution in consideration of the influence on the compound and the resin.
- the pH of the acidic aqueous solution is usually about 0 to 5, preferably about 0 to 3.
- the amount of the acidic aqueous solution used in the purification method of the present embodiment is not particularly limited, but is used from the viewpoint of reducing the number of extractions for metal removal and ensuring operability in consideration of the total liquid amount. It is preferable to adjust the amount. From the above viewpoint, the amount of the acidic aqueous solution used is preferably 10 to 200% by mass and more preferably 20 to 100% by mass with respect to 100% by mass of the solution (S).
- the metal component can be extracted from the compound or the resin in the solution (S) by bringing the acidic aqueous solution into contact with the solution (S).
- the solution (S) further includes an organic solvent arbitrarily mixed with water.
- the solution (S) contains an organic solvent that is arbitrarily miscible with water, the amount of the compound and / or resin charged can be increased, the liquid separation property is improved, and purification is performed with high pot efficiency.
- the method of adding an organic solvent arbitrarily mixed with water is not particularly limited, for example, a method of adding to a solution containing an organic solvent in advance, a method of adding to a water or acidic aqueous solution in advance, a solution containing an organic solvent and water or an acidic aqueous solution. Any of the methods of adding after contacting may be used. Among these, the method of adding to the solution containing an organic solvent in advance is preferable from the viewpoint of the workability of the operation and the ease of management of the charged amount.
- the organic solvent arbitrarily mixed with water used in the purification method of the present embodiment is not particularly limited, but an organic solvent that can be safely applied to a semiconductor manufacturing process is preferable.
- the amount of the organic solvent arbitrarily mixed with water is not particularly limited as long as the solution phase and the aqueous phase are separated from each other, but is 0.1 to 100 times by mass with respect to the total amount of the compound and the resin to be used. It is preferably 0.1 to 50 times by mass, more preferably 0.1 to 20 times by mass.
- organic solvent arbitrarily mixed with water used in the purification method of the present embodiment include, but are not limited to, ethers such as tetrahydrofuran and 1,3-dioxolane; alcohols such as methanol, ethanol and isopropanol Ketones such as acetone and N-methylpyrrolidone; aliphatic hydrocarbons such as glycol ethers such as ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether Can be mentioned.
- ethers such as tetrahydrofuran and 1,3-dioxolane
- alcohols such as methanol, ethanol and isopropanol Ketones such as acetone and N-methylpyrrolidone
- aliphatic hydrocarbons such as glycol ethers such as ethylene glycol monoethyl ether, ethylene glycol monobutyl
- N-methylpyrrolidone, propylene glycol monomethyl ether and the like are preferable, and N-methylpyrrolidone and propylene glycol monomethyl ether are more preferable.
- Each of these solvents can be used alone or in combination of two or more.
- the temperature at the time of the extraction treatment is usually 20 to 90 ° C, preferably 30 to 80 ° C.
- the extraction operation is performed, for example, by mixing well by stirring and then allowing to stand. Thereby, the metal part contained in solution (S) transfers to an aqueous phase. Moreover, the acidity of a solution falls by this operation and the quality change of a compound and / or resin can be suppressed.
- the solution phase is recovered by decantation or the like.
- the standing time is not particularly limited, but it is preferable to adjust the standing time from the viewpoint of improving the separation between the solvent-containing solution phase and the aqueous phase.
- the time for standing is 1 minute or longer, preferably 10 minutes or longer, more preferably 30 minutes or longer.
- the extraction process may be performed only once, but it is also effective to repeat the operations of mixing, standing, and separation a plurality of times.
- the solution phase containing the compound or the resin is further brought into contact with water to extract impurities in the compound or the resin (second extraction).
- second extraction Specifically, for example, after performing the extraction treatment using an acidic aqueous solution, the solution phase containing the compound and / or resin and solvent extracted and recovered from the aqueous solution is further subjected to extraction treatment with water. It is preferable.
- the extraction treatment with water is not particularly limited, but can be performed, for example, by thoroughly mixing the solution phase and water by stirring or the like and then allowing the obtained mixed solution to stand. Since the mixed solution after standing is separated into a solution phase containing a compound and / or a resin and a solvent and an aqueous phase, the solution phase can be recovered by decantation or the like.
- the water used here is preferably water having a low metal content, for example, ion-exchanged water, in accordance with the purpose of the present embodiment.
- the extraction process may be performed only once, but it is also effective to repeat the operations of mixing, standing, and separation a plurality of times. Further, the use ratio of both in the extraction process, conditions such as temperature and time are not particularly limited, but they may be the same as in the case of the contact process with the acidic aqueous solution.
- the water that can be mixed into the solution containing the compound and / or resin and solvent thus obtained can be easily removed by performing an operation such as vacuum distillation. Moreover, a solvent can be added to the said solution as needed, and the density
- the method for isolating the compound and / or resin from the solution containing the obtained compound and / or resin and solvent is not particularly limited, and known methods such as removal under reduced pressure, separation by reprecipitation, and combinations thereof. Can be done. If necessary, known processes such as a concentration operation, a filtration operation, a centrifugal separation operation, and a drying operation can be performed.
- the film-forming composition for lithography in the present embodiment includes a compound represented by the formula (1), a resin obtained using the compound represented by the formula (1) as a monomer, and a compound represented by the formula (2) And at least one selected from the group consisting of resins obtained by using the compound represented by the formula (2) as a monomer.
- the film forming composition for lithography for chemical amplification resist application in the present embodiment (hereinafter also referred to as “resist composition”) is represented by the compound represented by the formula (1) and the formula (1).
- resist composition is represented by the compound represented by the formula (1) and the formula (1).
- One or more selected from the group consisting of a resin obtained using a compound as a monomer, a compound represented by the formula (2), and a resin obtained using the compound represented by the formula (2) as a monomer as a resist base material contains.
- the resist composition in the present embodiment preferably contains a solvent.
- the solvent include, but are not limited to, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-propyl ether acetate, and ethylene glycol mono-n-butyl ether acetate.
- Ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, propylene glycol mono -Propylene glycol such as n-butyl ether acetate Cole monoalkyl ether acetates; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether; methyl lactate, ethyl lactate, n-propyl lactate, n-butyl lactate, n-amyl lactate, etc.
- PGMEA propylene glycol monomethyl ether acetate
- PGMEA propylene glycol monoethyl ether acetate
- Lactate esters aliphatic carboxylic acid esters such as methyl acetate, ethyl acetate, n-propyl acetate, n-butyl acetate, n-amyl acetate, n-hexyl acetate, methyl propionate, ethyl propionate; Methyl propionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 3-methoxy-2-methylpropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyrate Other esters such as acetate, butyl 3-methoxy-3-methylpropionate, butyl 3-methoxy-3-methylbutyrate, methyl acetoacetate, methyl pyruvate and ethyl pyruvate; aromatic hydrocarbons such as toluene and xylene Ketones such as 2-heptan
- the solvent used in this embodiment is preferably a safe solvent, more preferably at least one selected from PGMEA, PGME, CHN, CPN, 2-heptanone, anisole, butyl acetate, ethyl propionate and ethyl lactate.
- a seed more preferably at least one selected from PGMEA, PGME and CHN.
- the amount of the solid component and the amount of the solvent are not particularly limited, but 1 to 80% by weight of the solid component and 20 to 99% of the solvent with respect to 100% by weight of the total amount of the solid component and the solvent.
- the solid component is preferably 1 to 50% by mass, more preferably 1 to 50% by mass of the solid component and 50 to 99% by mass of the solvent, further preferably 2 to 40% by mass of the solid component and 60 to 98% by mass of the solvent, and particularly preferably solid
- the component is 2 to 10% by mass and the solvent is 90 to 98% by mass.
- the resist composition of this embodiment is at least one selected from the group consisting of an acid generator (C), a crosslinking agent (G), an acid diffusion controller (E), and other components (F) as other solid components. It may contain.
- solid component refers to a component other than a solvent.
- the acid generator (C), the crosslinking agent (G), the acid diffusion controller (E) and other components (F), known ones can be used, and are not particularly limited. Those described in Japanese Patent No. / 024778 are preferable.
- the content of the compound and / or resin used as the resist base material is not particularly limited, but the total mass of the solid component (resist base material, acid generator (C), crosslinking agent (G ), Acid diffusion controller (E) and other components (F) and the like, and the total amount of solid components including the optionally used components, the same shall apply hereinafter)).
- the amount is preferably 55 to 90% by mass, more preferably 60 to 80% by mass, and particularly preferably 60 to 70% by mass.
- the content of the compound and / or resin used as the resist base is in the above range, the resolution is further improved and the line edge roughness (LER) tends to be further reduced.
- the said content is the total amount of both components.
- the resist composition according to the present embodiment includes a resist substrate, an acid generator (C), a cross-linking agent (G), and an acid diffusion controller (E) as necessary, as long as the object of the present invention is not impaired.
- another component (F) may be called arbitrary component (F).
- a resist base material hereinafter also referred to as “component (A)”
- an acid generator C
- a crosslinking agent G
- an acid diffusion controller E
- an optional component The content of F (component (A) / acid generator (C) / crosslinking agent (G) / acid diffusion controller (E) / optional component (F)) is mass% based on solids, Preferably 50 to 99.4 / 0.001 to 49 / 0.5 to 49 / 0.001 to 49/0 to 49, More preferably 55 to 90/1 to 40 / 0.5 to 40 / 0.01 to 10/0 to 5, More preferably 60 to 80/3 to 30/1 to 30 / 0.01 to 5/0 to 1, Particularly preferred is 60 to 70/10 to 25/2 to 20 / 0.01 to 3/0.
- the blending ratio of each component is selected from each range so that the sum is 100% by mass. When the blending ratio of each component is within the above range, the performance such as sensitivity, resolution, develop
- the resist composition of this embodiment is usually prepared by dissolving each component in a solvent at the time of use to make a uniform solution, and then filtering with a filter having a pore size of about 0.2 ⁇ m, for example, as necessary.
- the resist composition of the present embodiment can contain other resins other than the resin of the present embodiment as long as the object of the present invention is not impaired.
- Other resins are not particularly limited.
- novolak resins polyvinylphenols, polyacrylic acid, polyvinyl alcohol, styrene-maleic anhydride resins, and acrylic acid, vinyl alcohol, or vinylphenol as monomer units. Examples thereof include polymers or derivatives thereof.
- the content of other resins is not particularly limited and is appropriately adjusted according to the type of component (A) to be used, but is preferably 30 parts by mass or less with respect to 100 parts by mass of component (A). More preferably, it is 10 mass parts or less, More preferably, it is 5 mass parts or less, Most preferably, it is 0 mass part.
- An amorphous film can be formed by spin coating using the resist composition of the present embodiment.
- the resist composition of this embodiment can be applied to a general semiconductor manufacturing process.
- the type of resin obtained using these as monomers and / or the type of developer used either a positive resist pattern or a negative resist pattern is used. Can be made separately.
- the dissolution rate of the amorphous film formed by spin-coating the resist composition of the present embodiment with respect to the developer at 23 ° C. is preferably 5 ⁇ / sec or less, and 0.05 to 5 ⁇ / It is more preferable that it is sec, and it is more preferable that it is 0.0005 to 5 cm / sec.
- the dissolution rate is 5 kg / sec or less, the resist is insoluble in the developer and tends to be easily formed as a resist. Further, when the dissolution rate is 0.0005 K / sec or more, the resolution may be improved.
- the dissolution rate of the amorphous film formed by spin-coating the resist composition of the present embodiment in a developing solution at 23 ° C. is preferably 10 ⁇ / sec or more.
- the dissolution rate is 10 kg / sec or more, it is easily dissolved in a developer and suitable for a resist.
- the dissolution rate is 10 ⁇ / sec or more, the resolution may be improved. This is presumably because the compound represented by the above formulas (1) and (2) and / or the micro surface portion of the resin containing the compound as a constituent component dissolves and LER is reduced. Defect reduction effect is also seen.
- the dissolution rate can be determined by immersing the amorphous film in a developer at a temperature of 23 ° C. for a predetermined time and measuring the film thickness before and after the immersion by a known method such as visual observation, an ellipsometer, or a QCM method.
- a portion exposed to radiation such as KrF excimer laser, extreme ultraviolet light, electron beam or X-ray of an amorphous film formed by spin-coating the resist composition of this embodiment is applied to a developer at 23 ° C.
- the dissolution rate is preferably 10 ⁇ / sec or more.
- the dissolution rate is 10 kg / sec or more, it is easily dissolved in a developer and suitable for a resist.
- the dissolution rate is 10 ⁇ / sec or more, the resolution may be improved. This is presumably because the compound represented by the above formulas (1) and (2) and / or the micro surface portion of the resin containing the compound as a constituent component dissolves and LER is reduced. Defect reduction effect is also seen.
- the amorphous film formed by spin-coating the resist composition of this embodiment is exposed to a developing solution at 23 ° C. at a portion exposed by radiation such as KrF excimer laser, extreme ultraviolet light, electron beam or X-ray.
- the dissolution rate is preferably 5 kg / sec or less, more preferably 0.05 to 5 kg / sec, and further preferably 0.0005 to 5 kg / sec.
- the dissolution rate is 5 kg / sec or less, the resist is insoluble in the developer and tends to be easily formed as a resist. Further, when the dissolution rate is 0.0005 K / sec or more, the resolution may be improved.
- the component (A) contained in the film forming composition for lithography for non-chemically amplified resist application of the present embodiment is a diazonaphthoquinone photoactive compound (B) described later.
- a positive resist base material that is easily soluble in a developer by irradiating g-line, h-line, i-line, KrF excimer laser, ArF excimer laser, extreme ultraviolet light, electron beam or X-ray. Useful as.
- G-line, h-line, i-line, KrF excimer laser, ArF excimer laser, extreme ultraviolet light, electron beam or X-ray does not change the property of component (A) greatly, but diazonaphthoquinone photoactivity is hardly soluble in the developer. Since the compound (B) changes to a readily soluble compound, a resist pattern can be formed by a development process.
- the component (A) contained in the radiation-sensitive composition of the present embodiment is a compound having a relatively low molecular weight, the roughness of the resulting resist pattern is very small.
- at least one selected from the group consisting of R 0 to R 5 is preferably a group containing an iodine atom.
- the radiation-sensitive composition increases the ability to absorb radiation such as electron beams, extreme ultraviolet rays (EUV), and X-rays. This is preferable because the sensitivity can be increased.
- EUV extreme ultraviolet rays
- the glass transition temperature of the component (A) contained in the radiation-sensitive composition of the present embodiment is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, further preferably 140 ° C. or higher, and particularly preferably 150 ° C. or higher.
- the upper limit of the glass transition temperature of a component (A) is not specifically limited, For example, it is 400 degreeC.
- the semiconductor lithography process has heat resistance capable of maintaining the pattern shape and tends to improve performance such as high resolution.
- the crystallization calorific value obtained by differential scanning calorimetric analysis of the glass transition temperature of the component (A) contained in the radiation-sensitive composition of the present embodiment is preferably less than 20 J / g.
- the (crystallization temperature) ⁇ (glass transition temperature) is preferably 70 ° C. or higher, more preferably 80 ° C. or higher, still more preferably 100 ° C. or higher, and particularly preferably 130 ° C. or higher.
- crystallization heat generation amount is less than 20 J / g, or (crystallization temperature) ⁇ (glass transition temperature) is in the above range, an amorphous film can be easily formed by spin-coating the radiation-sensitive composition, and the resist Therefore, it is likely that the film forming property required for the above can be maintained for a long period of time and the resolution can be improved.
- the crystallization heat generation amount, the crystallization temperature, and the glass transition temperature can be obtained by differential scanning calorimetry using DSC / TA-50WS manufactured by Shimadzu Corporation.
- About 10 mg of a sample is put into an aluminum non-sealed container and heated to a melting point or higher at a temperature rising rate of 20 ° C./min in a nitrogen gas stream (50 mL / min).
- the temperature is raised again to the melting point or higher at a temperature rising rate of 20 ° C./min in a nitrogen gas stream (30 mL / min). Further, after rapid cooling, the temperature is increased again to 400 ° C.
- the temperature at the midpoint of the step difference of the baseline that has changed in a step shape is the glass transition temperature (Tg), and the temperature of the exothermic peak that appears thereafter is the crystallization temperature.
- Tg glass transition temperature
- the calorific value is obtained from the area of the region surrounded by the exothermic peak and the baseline, and is defined as the crystallization calorific value.
- the component (A) contained in the radiation-sensitive composition of the present embodiment is 100 or less, preferably 120 ° C. or less, more preferably 130 ° C. or less, further preferably 140 ° C. or less, and particularly preferably 150 ° C. or less under normal pressure. It is preferable that sublimability is low. Low sublimation means that, in thermogravimetric analysis, the weight loss when held at a predetermined temperature for 10 minutes is 10% or less, preferably 5% or less, more preferably 3% or less, even more preferably 1% or less, particularly preferably Indicates 0.1% or less. Since the sublimation property is low, it is possible to prevent exposure apparatus from being contaminated by outgas during exposure. In addition, a good pattern shape can be obtained with low roughness.
- Component (A) contained in the radiation-sensitive composition of the present embodiment is propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone (CHN), cyclopentanone (CPN), 2-heptanone Selected from the group consisting of anisole, butyl acetate, ethyl propionate and ethyl lactate and exhibiting the highest solubility in component (A) at 23 ° C., preferably 1% by mass or more, more preferably Dissolves in an amount of 5% by mass or more, more preferably 10% by mass or more.
- it is selected from the group consisting of PGMEA, PGME, and CHN, and (A) a solvent that exhibits the highest solubility in the resist base material, at 23 ° C., 20% by mass or more, and particularly preferably PGMEA On the other hand, 20 mass% or more dissolves at 23 ° C.
- the diazonaphthoquinone photoactive compound (B) contained in the radiation-sensitive composition of the present embodiment is a diazonaphthoquinone substance containing a polymeric and non-polymeric diazonaphthoquinone photoactive compound.
- a photosensitive component photosensitive agent
- one or more kinds can be arbitrarily selected and used without any particular limitation.
- the component (B) a compound obtained by reacting naphthoquinone diazide sulfonic acid chloride, benzoquinone diazide sulfonic acid chloride and the like with a low molecular compound or a high molecular compound having a functional group capable of condensation reaction with these acid chlorides.
- the functional group capable of condensing with acid chloride is not particularly limited, and examples thereof include a hydroxyl group and an amino group, and a hydroxyl group is particularly preferable.
- the compound that can be condensed with an acid chloride containing a hydroxyl group is not particularly limited, and examples thereof include hydroquinone, resorcin, 2,4-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone.
- 2,4,4'-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone, 2,2', 3,4,6 ' Hydroxybenzophenones such as pentahydroxybenzophenone; hydroxyphenylalkanes such as bis (2,4-dihydroxyphenyl) methane, bis (2,3,4-trihydroxyphenyl) methane, bis (2,4-dihydroxyphenyl) propane 4, 4 ′, 3 ′′, 4 ′′ -tetrahydroxy-3, 5, Hydroxytriphenylmethane such as 3 ′, 5′-tetramethyltriphenylmethane, 4, 4 ′, 2 ′′, 3 ′′, 4 ′′ -pentahydroxy-3, 5, 3 ′, 5′-tetramethyltriphenylmethane And the like.
- hydroxyphenylalkanes such as bis (2,4-dihydroxyphenyl) methane
- acid chlorides such as naphthoquinone diazide sulfonic acid chloride and benzoquinone diazide sulfonic acid chloride include 1,2-naphthoquinone diazide-5-sulfonyl chloride, 1,2-naphthoquinone diazide-4-sulfonyl chloride, and the like. Can be mentioned.
- the radiation-sensitive composition of the present embodiment is prepared by, for example, dissolving each component in a solvent at the time of use to obtain a uniform solution, and then filtering by, for example, a filter having a pore size of about 0.2 ⁇ m as necessary. It is preferred that
- An amorphous film can be formed by spin coating using the radiation-sensitive composition of the present embodiment. Moreover, the radiation sensitive composition of this embodiment can be applied to a general semiconductor manufacturing process. Depending on the type of developer used, either a positive resist pattern or a negative resist pattern can be created.
- the dissolution rate of the amorphous film formed by spin-coating the radiation-sensitive composition of this embodiment at 23 ° C. with respect to the developing solution is preferably 5 ⁇ / sec or less, and 0.05 to More preferably, it is 5 ⁇ / sec, and further preferably 0.0005 to 5 ⁇ / sec.
- the dissolution rate is 5 kg / sec or less, the resist is insoluble in the developer and tends to be easily formed as a resist. Further, when the dissolution rate is 0.0005 K / sec or more, the resolution may be improved.
- the dissolution rate of the amorphous film formed by spin-coating the radiation-sensitive composition of the present embodiment in a developer at 23 ° C. is preferably 10 ⁇ / sec or more.
- the dissolution rate is 10 ⁇ ⁇ / sec or more, it is easily dissolved in a developer and suitable for a resist.
- the dissolution rate is 10 ⁇ / sec or more, the resolution may be improved. This is presumably because the compound represented by the above formulas (1) and (2) and / or the micro surface portion of the resin containing the compound as a constituent component dissolves and LER is reduced. Defect reduction effect is also seen.
- the dissolution rate can be determined by immersing an amorphous film in a developer for a predetermined time at 23 ° C., and measuring the film thickness before and after the immersion by a known method such as visual observation, an ellipsometer, or a QCM method. .
- the amorphous film formed by spin-coating the radiation-sensitive composition of this embodiment is irradiated with radiation such as KrF excimer laser, extreme ultraviolet light, electron beam or X-ray, or 20 to
- the dissolution rate of the exposed portion after heating at 500 ° C. in the developer at 23 ° C. is preferably 10 ⁇ / sec or more, more preferably 10 to 10000 ⁇ / sec, and even more preferably 100 to 1000 ⁇ / sec.
- the dissolution rate is 10 kg / sec or more, it is easily dissolved in a developer and suitable for a resist.
- the dissolution rate is 10,000 kg / sec or less, the resolution may be improved. This is presumably because the compound represented by the above formulas (1) and (2) and / or the micro surface portion of the resin containing the compound as a constituent component dissolves and LER is reduced. Defect reduction effect is also seen.
- the amorphous film formed by spin-coating the radiation-sensitive composition of the present embodiment is irradiated with radiation such as KrF excimer laser, extreme ultraviolet light, electron beam or X-ray, or 20 to
- the dissolution rate of the exposed portion after heating at 500 ° C. with respect to the developer at 23 ° C. is preferably 5 K / sec or less, more preferably from 0.05 to 5 K / sec, more preferably from 0.0005 to More preferably, it is 5 kg / sec.
- the dissolution rate is 5 kg / sec or less, the resist is insoluble in the developer and tends to be easily formed as a resist.
- the resolution may be improved. This is because an unexposed portion that dissolves in a developer due to a change in solubility before and after exposure of the compound represented by the above formulas (1) and (2) and / or a resin containing the compound as a constituent component, and a developer This is presumably because the contrast at the interface with the exposed portion that does not dissolve in the substrate increases. In addition, LER reduction and defect reduction effects are also seen.
- the content of the component (A) is arbitrarily selected from the total weight of the solid component (component (A), diazonaphthoquinone photoactive compound (B), and other components (D)).
- the total of the solid components to be used is preferably 1 to 99% by mass, more preferably 5 to 95% by mass, still more preferably 10 to 90% by mass, and particularly preferably 25 to 75% by mass. %.
- the radiation-sensitive composition of the present embodiment tends to obtain a pattern with high sensitivity and small roughness.
- the content of the diazonaphthoquinone photoactive compound (B) is the total weight of the solid component (component (A), diazonaphthoquinone photoactive compound (B) and other components (D), etc.)
- the total of solid components optionally used in the following, the same shall apply hereinafter) is preferably 1 to 99% by mass, more preferably 5 to 95% by mass, still more preferably 10 to 90% by mass, and particularly preferably. 25 to 75% by mass.
- the radiation-sensitive composition of the present embodiment tends to obtain a highly sensitive and small roughness pattern.
- an acid generator, a cross-linkage, and a component other than the component (A) and the diazonaphthoquinone photoactive compound (B) are included as necessary, as long as the object of the present invention is not impaired.
- Agent acid diffusion control agent, dissolution accelerator, dissolution control agent, sensitizer, surfactant, organic carboxylic acid or phosphorus oxo acid or derivative thereof, heat and / or photocuring catalyst, polymerization inhibitor, flame retardant, Fillers, coupling agents, thermosetting resins, photocurable resins, dyes, pigments, thickeners, lubricants, antifoaming agents, leveling agents, UV absorbers, surfactants, colorants, nonionic surfactants 1 type, or 2 or more types can be added.
- another component (D) may be called arbitrary component (D).
- the blending ratio of each component is mass% based on the solid component, Preferably 1 to 99/99 to 1/0 to 98, More preferably 5 to 95/95 to 5/0 to 49, More preferably, 10 to 90/90 to 10/0 to 10, Even more preferably, 20-80 / 80-20 / 0-5, Particularly preferred is 25 to 75/75 to 25/0.
- the blending ratio of each component is selected from each range so that the sum is 100% by mass. When the blending ratio of each component of the radiation-sensitive composition of the present embodiment is in the above range, it tends to be excellent in performance such as sensitivity and resolution in addition to roughness.
- the radiation-sensitive composition of the present embodiment may contain other resins as long as the object of the present invention is not impaired.
- other resins include novolak resins, polyvinylphenols, polyacrylic acid, polyvinyl alcohol, styrene-maleic anhydride resins, and polymers containing acrylic acid, vinyl alcohol, or vinyl phenol as monomer units or These derivatives are mentioned.
- the blending amount of these resins is appropriately adjusted according to the type of component (A) used, but is preferably 30 parts by mass or less, more preferably 10 parts per 100 parts by mass of component (A). It is not more than part by mass, more preferably not more than 5 parts by mass, particularly preferably 0 part by mass.
- a resist pattern is formed by forming a photoresist layer on a substrate using the resist composition or radiation-sensitive composition of the present embodiment described above, and then applying radiation to a predetermined region of the photoresist layer. And developing. More specifically, a step of forming a resist film on a substrate using the resist composition or radiation-sensitive composition of the present embodiment described above, a step of exposing the formed resist film, and developing the resist film And a step of forming a resist pattern.
- the resist pattern in this embodiment can also be formed as an upper layer resist in a multilayer process.
- the method for forming the resist pattern is not particularly limited, and examples thereof include the following methods.
- a resist film is formed by applying a resist composition or a radiation sensitive composition on a conventionally known substrate by a coating means such as spin coating, cast coating, roll coating or the like.
- the conventionally known substrate is not particularly limited, and examples thereof include a substrate for electronic components and a substrate on which a predetermined wiring pattern is formed. More specifically, a silicon substrate, a metal substrate such as copper, chromium, iron, and aluminum, a glass substrate, and the like can be given. Examples of the wiring pattern material include copper, aluminum, nickel, and gold. Further, if necessary, an inorganic and / or organic film may be provided on the substrate.
- inorganic BARC inorganic antireflection film
- organic BARC organic antireflection film
- Surface treatment with hexamethylene disilazane or the like may be performed on the substrate.
- the substrate coated with the resist composition or radiation-sensitive composition is heated.
- the heating conditions vary depending on the composition of the resist composition or radiation-sensitive composition, but are preferably 20 to 250 ° C, more preferably 20 to 150 ° C. Heating is preferred because the adhesion of the resist to the substrate tends to be improved.
- the resist film is exposed to a desired pattern with any radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, electron beam, extreme ultraviolet light (EUV), X-ray, and ion beam.
- the exposure conditions and the like are appropriately selected according to the composition of the resist composition or the radiation sensitive composition.
- the heating conditions vary depending on the composition of the resist composition or the radiation-sensitive composition, but are preferably 20 to 250 ° C, more preferably 20 to 150 ° C.
- a predetermined resist pattern is formed by developing the exposed resist film with a developer.
- a solubility parameter (SP value) for the compound obtained by using the compound represented by the formula (1) or (2) or the compound represented by the formula (1) or (2) as a monomer is used. It is preferable to select a solvent close to), and polar solvents such as ketone solvents, ester solvents, alcohol solvents, amide solvents, ether solvents, etc., hydrocarbon solvents or alkaline aqueous solutions can be used.
- ketone solvent examples include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone.
- ester solvents include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3 -Ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate and the like.
- the alcohol solvent examples include methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol (2-propanol), n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, Alcohols such as 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol, n-decanol, glycol solvents such as ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monomethyl ether, propylene glycol monomethyl Ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene Glycol monoethyl ether, glycol monoethyl ether and methoxymethyl butanol.
- Alcohols such as 4-methyl-2-pentanol, n-heptyl alcohol, n-oc
- ether solvent examples include dioxane, tetrahydrofuran and the like in addition to the glycol ether solvent.
- amide solvents include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, hexamethylphosphoric triamide, 1,3-dimethyl-2-imidazolidinone and the like. Can be mentioned.
- hydrocarbon solvent examples include aromatic hydrocarbon solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as pentane, hexane, octane and decane.
- the water content of the developer as a whole is preferably less than 70% by mass, more preferably less than 50% by mass, and less than 30% by mass. More preferably, it is still more preferable that it is less than 10 mass%, and it is especially preferable not to contain water
- alkaline aqueous solution examples include alkaline compounds such as mono-, di- or trialkylamines, mono-, di- or trialkanolamines, heterocyclic amines, tetramethylammonium hydroxide (TMAH), and choline. Can be mentioned.
- alkaline compounds such as mono-, di- or trialkylamines, mono-, di- or trialkanolamines, heterocyclic amines, tetramethylammonium hydroxide (TMAH), and choline. Can be mentioned.
- the developer is at least selected from a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent, and an ether solvent from the viewpoint of improving resist performance such as resist pattern resolution and roughness.
- a developer containing one solvent is preferred.
- the vapor pressure of the developer is preferably 5 kPa or less, more preferably 3 kPa or less, and even more preferably 2 kPa or less at 20 ° C.
- the vapor pressure of the developing solution is 5 kPa or less, evaporation of the developing solution on the substrate or in the developing cup is suppressed, temperature uniformity in the wafer surface is improved, and as a result, dimensional uniformity in the wafer surface is good. It tends to become.
- Examples of specific developers having a vapor pressure of 5 kPa or less at 20 ° C. include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutylketone, cyclohexanone, methyl Ketone solvents such as cyclohexanone, phenylacetone, methyl isobutyl ketone; butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypro Pionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, butyl formate, propyl formate, ethyl lactate, butyl lactate, milk Ester solvent
- ether solvents such as tetrahydrofuran; N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide amide solvents; toluene, xylene and other aromatic hydrocarbon solvents; Aliphatic hydrocarbon solvents such as octane and decane are listed.
- Examples of specific developers having a vapor pressure of 2 kPa or less at 20 ° C. include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutylketone, cyclohexanone, methyl Ketone solvents such as cyclohexanone and phenylacetone; butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3 -Ester solvents such as methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl lactate, butyl lactate, propyl lactate; n-butyl alcohol alcohol solvents such as sec-
- the surfactant is not particularly limited, and for example, ionic or nonionic fluorine-based and / or silicon-based surfactants can be used.
- fluorine and / or silicon surfactants include, for example, JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62-170950.
- the amount of the surfactant used is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and more preferably 0.01 to 0.5% by mass with respect to the total amount of the developer.
- a development method for example, a method in which a substrate is immersed in a tank filled with a developer for a certain period of time (dip method), a method in which the developer is raised on the surface of the substrate by surface tension and is left stationary for a certain time (paddle) Method), a method of spraying the developer on the substrate surface (spray method), a method of continuously applying the developer while scanning the developer coating nozzle on the substrate rotating at a constant speed (dynamic dispensing method) ) Etc.
- the time for developing the pattern is not particularly limited, but is preferably 10 seconds to 90 seconds.
- a step of stopping development may be performed while substituting with another solvent.
- the rinsing liquid used in the rinsing step after development is not particularly limited as long as the resist pattern cured by crosslinking is not dissolved, and a solution or water containing a general organic solvent can be used.
- a rinsing liquid containing at least one organic solvent selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents.
- a cleaning step is performed using a rinse solution containing at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, and amide solvents.
- a cleaning step is performed using a rinse solution containing an alcohol solvent or an ester solvent. Even more preferably, after the development, a step of washing with a rinsing solution containing a monohydric alcohol is performed. Particularly preferably, after the development, a washing step is performed using a rinsing liquid containing a monohydric alcohol having 5 or more carbon atoms.
- the time for rinsing the pattern is not particularly limited, but is preferably 10 seconds to 90 seconds.
- examples of the monohydric alcohol used in the rinsing step after development include linear, branched, and cyclic monohydric alcohols, and specifically, 1-butanol, 2-butanol, 3-methyl- 1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol, 1-heptanol, 1-octanol, 2-hexanol, cyclopentanol, 2- Heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol, 4-octanol and the like can be used.
- Particularly preferable monohydric alcohols having 5 or more carbon atoms include 1-hexanol, 2-hexanol, 4 -Methyl-2-pentanol, 1-pentanol, 3-methyl-1-butanol, etc. It is.
- a plurality of the above components may be mixed, or may be used by mixing with an organic solvent other than the above.
- the water content in the rinsing liquid is preferably 10% by mass or less, more preferably 5% by mass or less, and further preferably 3% by mass or less. When the water content in the rinsing liquid is 10% by mass or less, better development characteristics tend to be obtained.
- the vapor pressure of the rinsing liquid used after development is preferably 0.05 kPa or more and 5 kPa or less at 20 ° C., more preferably 0.1 kPa or more and 5 kPa or less, and 0.12 kPa or more and 3 kPa or less. Is more preferable.
- the vapor pressure of the rinsing liquid is 0.05 kPa or more and 5 kPa or less, the temperature uniformity in the wafer surface is further improved, and further, the swelling due to the penetration of the rinsing liquid is further suppressed, and the dimension in the wafer surface is uniform. Tend to be better.
- An appropriate amount of a surfactant can be added to the rinse solution.
- the developed wafer is cleaned using a rinsing solution containing the organic solvent.
- the cleaning method is not particularly limited. For example, a method of continuously applying a rinsing liquid onto a substrate rotating at a constant speed (rotary coating method), or immersing the substrate in a bath filled with the rinsing liquid for a certain period of time. A method (dip method), a method of spraying a rinsing liquid onto the substrate surface (spray method), etc. can be applied. Among them, a cleaning process is performed by a spin coating method, and the substrate is rotated at a rotational speed of 2000 rpm to 4000 rpm after cleaning. It is preferable to remove the rinse liquid from the substrate.
- the pattern wiring board is obtained by etching.
- the etching can be performed by a known method such as dry etching using plasma gas and wet etching using an alkali solution, a cupric chloride solution, a ferric chloride solution, or the like.
- plating after forming the resist pattern.
- Examples of the plating method include copper plating, solder plating, nickel plating, and gold plating.
- the residual resist pattern after etching can be stripped with an organic solvent.
- organic solvent include PGMEA (propylene glycol monomethyl ether acetate), PGME (propylene glycol monomethyl ether), EL (ethyl lactate) and the like.
- peeling method include a dipping method and a spray method.
- the wiring board on which the resist pattern is formed may be a multilayer wiring board or may have a small diameter through hole.
- the wiring board in this embodiment can also be formed by a method of depositing a metal in a vacuum after forming a resist pattern and then dissolving the resist pattern with a solution, that is, a lift-off method.
- a film forming composition for lithography for use in an underlayer film includes a compound represented by the above formula (1) and a compound represented by the above formula (1) as a monomer. And at least one substance selected from the group consisting of a resin obtained using the compound represented by formula (2) and the compound represented by formula (2) as a monomer.
- the substance is preferably 1 to 100% by mass, more preferably 10 to 100% by mass, and more preferably 50 to 100% by mass in the lower layer film-forming material from the viewpoints of coatability and quality stability. % Is more preferable, and 100% by mass is particularly preferable.
- the underlayer film forming material of this embodiment can be applied to a wet process and has excellent heat resistance and etching resistance. Furthermore, since the lower layer film forming material of the present embodiment uses the above-mentioned substances, it is possible to form a lower layer film that suppresses deterioration of the film during high-temperature baking and has excellent etching resistance against oxygen plasma etching and the like. . Furthermore, since the lower layer film forming material of this embodiment is also excellent in adhesion to the resist layer, an excellent resist pattern can be obtained. In addition, the lower layer film forming material of the present embodiment may include a known lower layer film forming material for lithography and the like as long as the effects of the present invention are not impaired.
- the lower layer film forming material in the present embodiment may contain a solvent.
- a solvent used for the lower layer film forming material a known one can be appropriately used as long as it can dissolve at least the above-described substances.
- the solvent include, but are not limited to, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; cellosolv solvents such as propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate; ethyl lactate and methyl acetate Ester solvents such as ethyl acetate, butyl acetate, isoamyl acetate, ethyl lactate, methyl methoxypropionate, methyl hydroxyisobutyrate; alcohol solvents such as methanol, ethanol, isopropanol, 1-ethoxy-2-propanol; toluene, xylene And aromatic hydrocarbons such as anisole. These solvents can be used alone or in combination of two or more.
- ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and
- cyclohexanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, methyl hydroxyisobutyrate and anisole are particularly preferable from the viewpoint of safety.
- the content of the solvent is not particularly limited, but from the viewpoint of solubility and film formation, it is preferably 100 to 10,000 parts by mass with respect to 100 parts by mass of the lower layer film-forming material, and 200 to 5, The amount is more preferably 000 parts by mass, and even more preferably 200 to 1,000 parts by mass.
- the lower layer film-forming material in the present embodiment may contain a crosslinking agent as necessary from the viewpoint of suppressing intermixing. Although it does not specifically limit as a crosslinking agent, For example, what was described in the international publication 2013/024779 can be used.
- crosslinking agent examples include, for example, phenol compounds, epoxy compounds, cyanate compounds, amino compounds, benzoxazine compounds, acrylate compounds, melamine compounds, guanamine compounds, glycoluril compounds, urea compounds, isocyanates. Examples thereof include, but are not limited to, compounds and azide compounds.
- crosslinking agents can be used alone or in combination of two or more. Among these, a benzoxazine compound, an epoxy compound, or a cyanate compound is preferable, and a benzoxazine compound is more preferable from the viewpoint of improving etching resistance.
- phenol compound known compounds can be used.
- phenols include phenols, alkylphenols such as cresols and xylenols, polyhydric phenols such as hydroquinone, polycyclic phenols such as naphthols and naphthalenediols, and bisphenols such as bisphenol A and bisphenol F.
- polyfunctional phenol compounds such as phenol novolac and phenol aralkyl resin.
- aralkyl type phenol resins are preferable from the viewpoint of heat resistance and solubility.
- epoxy compound known compounds can be used and selected from those having two or more epoxy groups in one molecule.
- D Xylide epoxidation of co-condensation resin of dicyclopentadiene and phenol, epoxidation of phenol aralkyl resin synthesized from phenol and paraxylylene dichloride, biphenyl synthesized from phenol and bischloromethylbiphenyl, etc.
- examples thereof include epoxidized products of aralkyl type phenol resins, and epoxidized products of naphthol aralkyl resins synthesized from naphthols and paraxylylene dichloride.
- These epoxy resins may be used independently and may use 2 or more types together. Among these, from the viewpoint of heat resistance and solubility, a solid epoxy resin at room temperature such as an epoxy resin obtained from phenol aralkyl resins and biphenyl aralkyl resins is preferable.
- the cyanate compound is not particularly limited as long as it is a compound having two or more cyanate groups in one molecule, and a known one can be used.
- a preferred cyanate compound one having a structure in which a hydroxyl group of a compound having two or more hydroxyl groups in one molecule is substituted with a cyanate group can be mentioned.
- the cyanate compound preferably has an aromatic group, and a cyanate compound having a structure in which the cyanate group is directly connected to the aromatic group can be suitably used.
- cyanate compounds include bisphenol A, bisphenol F, bisphenol M, bisphenol P, bisphenol E, phenol novolac resin, cresol novolac resin, dicyclopentadiene novolac resin, tetramethylbisphenol F, bisphenol A novolac resin, bromine.
- Bisphenol A brominated phenol novolak resin, trifunctional phenol, tetrafunctional phenol, naphthalene type phenol, biphenyl type phenol, phenol aralkyl resin, biphenyl aralkyl resin, naphthol aralkyl resin, dicyclopentadiene aralkyl resin, alicyclic phenol, phosphorus
- cyanate compounds may be used alone or in combination of two or more.
- the cyanate compound described above may be in any form of a monomer, an oligomer, and a resin.
- amino compound examples include m-phenylenediamine, p-phenylenediamine, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylpropane, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3 , 3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl Sulfide, 3,3′-diaminodiphenyl sulfide, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene
- Alicyclic amines such as heptane, 3 (4), 8 (9) -bis (aminomethyl) tricyclo [5.2.1.02,6] decane, 1,3-bisaminomethylcyclohexane, isophoronediamine , Ethylenediamine, hexamethylenediamine, Kuta diamine, decamethylene diamine, diethylene triamine, aliphatic amines such as triethylenetetramine, and the like.
- benzoxazine compound examples include Pd-type benzoxazine obtained from bifunctional diamines and monofunctional phenols, and Fa-type benzoxazine obtained from monofunctional diamines and bifunctional phenols. It is done.
- the melamine compound examples include hexamethylol melamine, hexamethoxymethyl melamine, a compound in which 1 to 6 methylol groups of hexamethylol melamine are methoxymethylated or a mixture thereof, hexamethoxyethyl melamine, hexaacyloxymethyl.
- examples thereof include compounds in which 1 to 6 methylol groups of melamine and hexamethylolmelamine are acyloxymethylated, or a mixture thereof.
- the guanamine compound include, for example, tetramethylolguanamine, tetramethoxymethylguanamine, a compound in which 1 to 4 methylol groups of tetramethylolguanamine are methoxymethylated, or a mixture thereof, tetramethoxyethylguanamine, tetraacyloxyguanamine And compounds in which 1 to 4 methylol groups of tetramethylolguanamine are acyloxymethylated, or a mixture thereof.
- glycoluril compound examples include, for example, tetramethylol glycoluril, tetramethoxyglycoluril, tetramethoxymethylglycoluril, a compound in which 1 to 4 methylol groups of tetramethylolglycoluril are methoxymethylated, or a mixture thereof, Examples thereof include compounds in which 1 to 4 methylol groups of tetramethylol glycoluril are acyloxymethylated, or mixtures thereof.
- urea compound examples include tetramethylol urea, tetramethoxymethyl urea, a compound in which 1 to 4 methylol groups of tetramethylol urea are methoxymethylated or a mixture thereof, tetramethoxyethyl urea, and the like.
- a crosslinking agent having at least one allyl group may be used from the viewpoint of improving the crosslinkability.
- Specific examples of the crosslinking agent having at least one allyl group include 2,2-bis (3-allyl-4-hydroxyphenyl) propane, 1,1,1,3,3,3-hexafluoro-2,2 -Bis (3-allyl-4-hydroxyphenyl) propane, bis (3-allyl-4-hydroxyphenyl) sulfone, bis (3-allyl-4-hydroxyphenyl) sulfide, bis (3-allyl-4-hydroxyphenyl) ) Allylphenols such as ether, 2,2-bis (3-allyl-4-cyanatophenyl) propane, 1,1,1,3,3,3-hexafluoro-2,2-bis (3 -Allyl-4-cyanatophenyl) propane, bis (3-allyl-4-cyanatosiphenyl) sulfone, bis (3-allyl-4-cyanatophenyl) sulfide, bis (3- Examples
- the content of the crosslinking agent in the lower layer film-forming material is not particularly limited, but is preferably 0.1 to 100 parts by weight with respect to 100 parts by weight of the lower layer film-forming material, and 5 to 50 parts by weight. Is more preferably 10 to 40 parts by mass.
- Crosslinking accelerator In the lower layer film forming material of the present embodiment, a crosslinking accelerator for accelerating crosslinking and curing reactions can be used as necessary.
- the crosslinking accelerator is not particularly limited as long as it promotes crosslinking and curing reaction, and examples thereof include amines, imidazoles, organic phosphines, and Lewis acids. These crosslinking accelerators can be used alone or in combination of two or more. Among these, imidazoles or organic phosphines are preferable, and imidazoles are more preferable from the viewpoint of lowering the crosslinking temperature.
- crosslinking accelerator examples include, but are not limited to, for example, 1,8-diazabicyclo (5,4,0) undecene-7, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylamino).
- Tertiary amines such as methyl) phenol, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 2-heptadecylimidazole, 2,4,5- Imidazoles such as triphenylimidazole, organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, phenylphosphine, tetraphenylphosphonium tetraphenylborate, teto Tetraphenyl such as phenylphosphonium / ethyltriphenylborate, tetrabutylphosphonium / tetrabutylborate, etc., 2-ethyl-4-methylimidazole / tetraphenylborate, N-methylmorpholine /
- the blending amount of the crosslinking accelerator is usually preferably 0.1 to 10 parts by mass when the entire lower layer film-forming material is 100 parts by mass, and more preferably easy to control and economical. From the viewpoint, it is 0.1 to 5 parts by mass, and more preferably 0.1 to 3 parts by mass.
- a radical polymerization initiator in the lower layer film forming material of the present embodiment, can be blended as necessary.
- the radical polymerization initiator may be a photopolymerization initiator that initiates radical polymerization with light or a thermal polymerization initiator that initiates radical polymerization with heat.
- Such a radical polymerization initiator is not particularly limited, and those conventionally used can be appropriately employed.
- 2-phenylazo-4-methoxy-2,4-dimethylvaleronitrile 1-[(1-cyano-1-methylethyl) azo] formamide, 1,1′-azobis (cyclohexane-1-carbonitrile), 2,2′-azobis (2-methylbutyronitrile), 2,2′-azobisisobutyronitrile, 2,2′-azobis (2,4-dimethylvaleronitrile), 2,2′-azobis ( 2-methylpropionamidine) dihydrochloride, 2,2′-azobis (2-methyl-N-phenylpropionamidine) dihydrochloride, 2,2′-azobis [N- (4-chlorophenyl) -2-methylpropionamidine] Dihydride chloride, 2,2'-azobis [N- (4-hydrophenyl) -2-methylpropionamidine] dihydrochloride 2,2′-azobis [2-methyl-N- (phenylmethyl) propionamidine] dihydrochloride, 2,2′-azo
- the content of the radical polymerization initiator may be a stoichiometrically required amount, but is preferably 0.05 to 25 parts by mass when the lower layer film forming material is 100 parts by mass. More preferably, the content is 0.1 to 10 parts by mass.
- the content of the radical polymerization initiator is 0.05 parts by mass or more, there is a tendency that curing can be prevented from being insufficient.
- the content of the radical polymerization initiator is 25 parts by mass or less. In such a case, the long-term storage stability of the lower layer film-forming material at room temperature tends to be prevented from being impaired.
- the lower layer film-forming material in the present embodiment may contain an acid generator as necessary from the viewpoint of further promoting the crosslinking reaction by heat.
- an acid generator those that generate an acid by thermal decomposition and those that generate an acid by light irradiation are known, and any of them can be used.
- an acid generator what was described in the international publication 2013/024779 can be used, for example.
- the content of the acid generator in the lower layer film forming material is not particularly limited, but is preferably 0.1 to 50 parts by weight, more preferably 0.5 to 50 parts by weight with respect to 100 parts by weight of the lower layer film forming material. 40 parts by mass.
- the lower layer film-forming material in the present embodiment may contain a basic compound from the viewpoint of improving storage stability.
- the basic compound serves as a quencher for the acid to prevent a slight amount of acid generated from the acid generator from causing the crosslinking reaction to proceed.
- a basic compound is not particularly limited, and examples thereof include those described in International Publication No. 2013/024779.
- the content of the basic compound in the lower layer film forming material is not particularly limited, but is preferably 0.001 to 2 parts by mass, more preferably 0.01 to 2 parts by mass with respect to 100 parts by mass of the lower layer film forming material. 1 part by mass.
- the lower layer film forming material in the present embodiment may contain other resins and / or compounds for the purpose of imparting curability by heat or light and controlling the absorbance.
- Such other resins and / or compounds include: naphthol resins, xylene resins, naphthol modified resins, phenol modified resins of naphthalene resins; polyhydroxystyrene, dicyclopentadiene resin, (meth) acrylate, dimethacrylate, trimethacrylate, tetra Resins containing no heteroaromatic ring such as methacrylate, vinylnaphthalene, naphthalene rings such as polyacenaphthylene, biphenyl rings such as phenanthrenequinone and fluorene, heterocycles having heteroatoms such as thiophene, indene, etc .; rosin resins; Examples thereof include resins or compounds containing an alicyclic structure such as cyclodextr, cyclodext
- the lower layer film-forming material in the present embodiment may contain a known additive.
- Known additives include, but are not limited to, for example, heat and / or photocuring catalysts, polymerization inhibitors, flame retardants, fillers, coupling agents, thermosetting resins, photocurable resins, dyes, pigments , Thickeners, lubricants, antifoaming agents, leveling agents, ultraviolet absorbers, surfactants, colorants, nonionic surfactants, and the like.
- the lower layer film for lithography in the present embodiment is formed from the lower layer film forming material described above.
- a lower layer film is formed on a substrate using the above composition, and at least one photoresist layer is formed on the lower layer film.
- a step of performing development by irradiating a predetermined region with radiation More specifically, a step (A-1) of forming a lower layer film on the substrate using the lower layer film forming material of the present embodiment, and a step of forming at least one photoresist layer on the lower layer film ( A-2) and a step (A-3) of performing development by irradiating a predetermined region of the photoresist layer with radiation after the step (A-2).
- an interlayer film is formed on a substrate using the above composition, an interlayer film is formed on the lower film using a resist interlayer film material, and the interlayer Forming at least one photoresist layer on the film; Irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern; Etching the intermediate layer film using the resist pattern as a mask, etching the lower layer film using the obtained intermediate layer film pattern as an etching mask, and etching the substrate using the obtained lower layer film pattern as an etching mask. Forming a pattern.
- a step (B-1) of forming a lower layer film on the substrate using the lower layer film forming material of the present embodiment, and a resist intermediate layer film material containing silicon atoms on the lower layer film are used.
- a step (B-4) of irradiating a predetermined region of the photoresist layer and developing to form a resist pattern and after the step (B-4), the intermediate layer film using the resist pattern as a mask Etching the lower layer film using the obtained intermediate layer film pattern as an etching mask, and etching the substrate using the obtained lower layer film pattern as an etching mask to form a pattern on the substrate (B-5)
- the formation method of the lower layer film for lithography in the present embodiment is not particularly limited as long as it is formed from the lower layer film forming material of the present embodiment, and a known method can be applied.
- a known method can be applied after applying the lower layer film material of the present embodiment on a substrate by a known coating method such as spin coating or screen printing or a printing method.
- the organic solvent is volatilized and removed, and then a known method is used.
- the lower layer film for lithography of this embodiment can be formed by crosslinking and curing. Examples of the crosslinking method include methods such as thermosetting and photocuring.
- the baking temperature is not particularly limited, but is preferably in the range of 80 to 450 ° C., more preferably 200 to 400 ° C.
- the baking time is not particularly limited, but is preferably within the range of 10 to 300 seconds.
- the thickness of the lower layer film can be appropriately selected according to the required performance, and is not particularly limited, but is usually preferably about 30 to 20,000 nm, more preferably 50 to 15,000 nm. .
- a silicon-containing resist layer thereon in the case of a two-layer process, a silicon-containing resist layer thereon, or a single-layer resist made of normal hydrocarbon, and in the case of a three-layer process, a silicon-containing intermediate layer is further formed thereon. It is preferable to prepare a single-layer resist layer that does not contain silicon. In this case, a well-known thing can be used as a photoresist material for forming this resist layer.
- a silicon-containing resist layer or a single layer resist made of normal hydrocarbon can be formed on the lower layer film.
- a silicon-containing intermediate layer can be formed on the lower layer film, and a single-layer resist layer not containing silicon can be formed on the silicon-containing intermediate layer.
- the photoresist material for forming the resist layer can be appropriately selected from known materials and is not particularly limited.
- a silicon-containing resist material for a two-layer process from the viewpoint of oxygen gas etching resistance, a silicon atom-containing polymer such as a polysilsesquioxane derivative or a vinylsilane derivative is used as a base polymer, and an organic solvent, an acid generator, If necessary, a positive photoresist material containing a basic compound or the like is preferably used.
- a silicon atom-containing polymer a known polymer used in this type of resist material can be used.
- a polysilsesquioxane-based intermediate layer is preferably used as the silicon-containing intermediate layer for the three-layer process.
- the intermediate layer With an effect as an antireflection film, reflection tends to be effectively suppressed.
- the k value increases and the substrate reflection tends to increase, but the reflection is suppressed in the intermediate layer.
- the substrate reflection can be reduced to 0.5% or less.
- the intermediate layer having such an antireflection effect is not limited to the following, but for 193 nm exposure, a polysilsesquide crosslinked with an acid or heat in which a light absorbing group having a phenyl group or a silicon-silicon bond is introduced. Oxane is preferably used.
- an intermediate layer formed by a Chemical-Vapor-deposition (CVD) method can be used.
- the intermediate layer produced by the CVD method and having a high effect as an antireflection film is not limited to the following, for example, a SiON film is known.
- a wet process such as spin coating or screen printing than by CVD.
- the upper layer resist in the three-layer process may be either a positive type or a negative type, and the same one as a commonly used single layer resist can be used.
- the lower layer film in this embodiment can also be used as an antireflection film for a normal single layer resist or a base material for suppressing pattern collapse. Since the lower layer film has excellent etching resistance for the base processing, it can be expected to function as a hard mask for the base processing.
- a wet process such as spin coating or screen printing is preferably used as in the case of forming the lower layer film.
- prebaking is usually performed, but this prebaking is preferably performed at 80 to 180 ° C. for 10 to 300 seconds.
- a resist pattern can be obtained by performing exposure, post-exposure baking (PEB), and development.
- the thickness of the resist film is not particularly limited, but is generally preferably 30 to 500 nm, more preferably 50 to 400 nm.
- the exposure light may be appropriately selected and used according to the photoresist material to be used.
- high energy rays having a wavelength of 300 nm or less, specifically, 248 nm, 193 nm, 157 nm excimer laser, 3 to 20 nm soft X-ray, electron beam, X-ray and the like can be mentioned.
- the resist pattern formed by the above-described method is one in which pattern collapse is suppressed by the lower layer film. Therefore, by using the lower layer film in the present embodiment, a finer pattern can be obtained, and the exposure amount necessary for obtaining the resist pattern can be reduced.
- gas etching is preferably used as the etching of the lower layer film in the two-layer process.
- gas etching etching using oxygen gas is suitable.
- an inert gas such as He or Ar, or CO, CO 2 , NH 3 , SO 2 , N 2 , NO 2 or H 2 gas may be added.
- gas etching can be performed only with CO, CO 2 , NH 3 , N 2 , NO 2, and H 2 gas without using oxygen gas.
- the latter gas is preferably used for side wall protection for preventing undercut of the pattern side wall.
- gas etching is also preferably used for etching the intermediate layer in the three-layer process.
- the gas etching the same one as described in the above two-layer process can be applied.
- the processing of the intermediate layer in the three-layer process is preferably performed using a fluorocarbon gas and a resist pattern as a mask.
- the lower layer film can be processed by, for example, oxygen gas etching using the intermediate layer pattern as a mask.
- a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed by a CVD method, an ALD method, or the like.
- the method for forming the nitride film is not limited to the following, but for example, a method described in Japanese Patent Application Laid-Open No. 2002-334869 (Patent Document 6) and WO 2004/066377 (Patent Document 7) can be used.
- a photoresist film can be formed directly on such an intermediate film, but an organic antireflection film (BARC) is formed on the intermediate film by spin coating, and a photoresist film is formed thereon. May be.
- BARC organic antireflection film
- a polysilsesquioxane-based intermediate layer is also preferably used.
- the resist intermediate layer film By providing the resist intermediate layer film with an effect as an antireflection film, reflection tends to be effectively suppressed.
- Specific materials of the polysilsesquioxane-based intermediate layer are not limited to the following, but are described, for example, in JP-A-2007-226170 (Patent Document 8) and JP-A-2007-226204 (Patent Document 9). Can be used.
- Etching of the next substrate can also be performed by a conventional method.
- the substrate is SiO 2 or SiN
- Etching mainly with gas can be performed.
- the substrate is etched with a chlorofluorocarbon gas, the silicon-containing resist of the two-layer resist process and the silicon-containing intermediate layer of the three-layer process are peeled off simultaneously with the substrate processing.
- the silicon-containing resist layer or the silicon-containing intermediate layer is separately peeled, and generally, dry etching peeling with a chlorofluorocarbon-based gas is performed after the substrate is processed. .
- the lower layer film in the present embodiment has a feature that the etching resistance of the substrate is excellent.
- known substrates can be appropriately selected and used, and are not particularly limited. Examples thereof include Si, ⁇ -Si, p-Si, SiO 2 , SiN, SiON, W, TiN, and Al. It is done.
- the substrate may be a laminate having a film to be processed (substrate to be processed) on a base material (support). Examples of such processed films include various Low-k films and stoppers thereof such as Si, SiO 2 , SiON, SiN, p-Si, ⁇ -Si, W, W-Si, Al, Cu, and Al—Si. A film etc.
- the thing of a different material from a base material (support body) is used normally.
- the thickness of the substrate to be processed or the film to be processed is not particularly limited, but is usually preferably about 50 to 10,000 nm, more preferably 75 to 5,000 nm.
- the resist permanent film formed by applying the composition in the present embodiment is suitable as a permanent film remaining in the final product after forming a resist pattern as necessary.
- the permanent film include a solder resist, a package material, an underfill material, a package adhesive layer such as a circuit element, an adhesive layer between an integrated circuit element and a circuit board, and a thin film display protective film for a thin display. Examples include a liquid crystal color filter protective film, a black matrix, and a spacer.
- the permanent film made of the composition according to the present embodiment has excellent heat resistance and moisture resistance, and also has a very excellent advantage of less contamination due to sublimation components.
- a display material is a material that has high sensitivity, high heat resistance, and moisture absorption reliability with little deterioration in image quality due to important contamination.
- composition in this embodiment is used for resist permanent film applications, in addition to the curing agent, if necessary, various additions such as other resins, surfactants and dyes, fillers, crosslinking agents, dissolution accelerators, etc.
- a composition for a resist permanent film can be obtained by adding an agent and dissolving in an organic solvent.
- the film forming composition for lithography and the composition for resist permanent film in the present embodiment can be prepared by blending the above components and mixing them using a stirrer or the like. Further, when the resist underlayer film composition or resist permanent film composition in the present embodiment contains a filler or a pigment, it is dispersed or mixed using a dispersing device such as a dissolver, a homogenizer, or a three roll mill. Can be prepared.
- a dispersing device such as a dissolver, a homogenizer, or a three roll mill.
- Carbon concentration and oxygen concentration were measured by organic elemental analysis.
- the molecular weight of the compound was measured by LC-MS analysis using Water's Acquity UPLC / MALDI-Synapt HDMS. Moreover, the gel permeation chromatography (GPC) analysis was performed on the following conditions, and the polystyrene conversion weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (Mw / Mn) were calculated
- Apparatus Shodex GPC-101 (manufactured by Showa Denko KK) Column: KF-80M x 3 Eluent: THF 1mL / min Temperature: 40 ° C
- the thermal decomposition temperature was 390 ° C.
- the glass transition point was 105 ° C.
- the melting point was 205 ° C., confirming that it had high heat resistance.
- the reaction was stirred at 90 ° C. for 3 hours to carry out the reaction.
- the reaction solution was concentrated and 50 g of heptane was added to precipitate the reaction product.
- the solution was filtered and separated.
- the solid obtained by filtration was dried and then subjected to separation and purification by column chromatography to obtain 5.8 g of the target compound (BisF-1) represented by the following formula.
- the following peaks were found by 400 MHz- 1 H-NMR, and confirmed to have a chemical structure of the following formula.
- the thermal decomposition temperature was 375 ° C.
- the glass transition point was 65 ° C.
- the melting point was 190 ° C., confirming that it had high heat resistance.
- the thermal decomposition temperature was 380 ° C.
- the glass transition point was 115 ° C.
- the melting point was 215 ° C., confirming that it had high heat resistance.
- the thermal decomposition temperature was 371 ° C.
- the glass transition point was 102 ° C.
- the melting point was 221 ° C., confirming that it had high heat resistance.
- the molecular weight of the obtained compound by the above method was 700.
- the thermal decomposition temperature was 365 ° C.
- the glass transition point was 85 ° C.
- the melting point was 220 ° C., confirming that it had high heat resistance.
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Abstract
Description
また、アルカリ現像性、光感度及び解像度に優れるレジスト永久膜を得るのに好適な新たな材料の開発も求められている。
さらに、従来、数多くの光学部材向け組成物が提案されているが、耐熱性、透明性及び屈折率を高い次元で両立させたものはなく、新たな材料の開発が求められている。
すなわち、本発明は、以下のとおりである。
[1]
下記式(0)で表される、化合物。
RZは、炭素数1~60のN価の基又は単結合であり、
RTは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、RTの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
Xは、酸素原子、硫黄原子又は無架橋であることを示し、
mは、各々独立して0~9の整数であり、ここで、mの少なくとも1つは1~9の整数であり、
Nは、1~4の整数であり、ここで、Nが2以上の整数の場合、N個の[ ]内の構造式は同一であっても異なっていてもよく、
rは、各々独立して0~2の整数である。)
[2]
前記式(0)で表される化合物が下記式(1)で表される化合物である、上記[1]に記載の化合物。
R1は、炭素数1~60のn価の基又は単結合であり、
R2~R5は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
m2及びm3は、各々独立して、0~8の整数であり、
m4及びm5は、各々独立して、0~9の整数であり、
但し、m2、m3、m4及びm5は同時に0になることはなく、
nは前記Nと同義であり、ここで、nが2以上の整数の場合、n個の[ ]内の構造式は同一であっても異なっていてもよく、
p2~p5は、前記rと同義である。)
[3]
前記式(0)で表される化合物が下記式(2)で表される化合物である、上記[1]に記載の化合物。
R1Aは、炭素数1~60のnA価の基又は単結合であり、
R2Aは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2Aの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
nAは、前記Nと同義であり、ここで、nAが2以上の整数の場合、nA個の[ ]内の構造式は同一であっても異なっていてもよく、
XAは、酸素原子、硫黄原子又は無架橋であることを示し、
m2Aは、各々独立して、0~7の整数であり、但し、少なくとも1つのm2Aは1~7の整数であり、
qAは、各々独立して、0又は1である。)
[4]
前記式(1)で表される化合物が下記式(1-1)で表される化合物である、上記[2]に記載の化合物。
R6~R7は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、
R10~R11は、各々独立して、水素原子又はアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
ここで、R10~R11の少なくとも1つはアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
m6及びm7は、各々独立して、0~7の整数であり、
但し、m4、m5、m6及びm7は同時に0になることはない。)
[5]
前記式(1-1)で表される化合物が下記式(1-2)で表される化合物である、上記[4]に記載の化合物。
R8~R9は、前記R6~R7と同義であり、
R12~R13は、前記R10~R11と同義であり、
m8及びm9は、各々独立して、0~8の整数であり、
但し、m6、m7、m8及びm9は同時に0になることはない。)
[6]
前記式(2)で表される化合物が下記式(2-1)で表される化合物である、上記[3]に記載の化合物。
R3Aは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、
R4Aは、各々独立して、水素原子又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、ここで、R4Aの少なくとも1つはアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
m6Aは、各々独立して、0~5の整数である。)
[7]
上記[1]に記載の化合物をモノマーとして得られる樹脂。
[8]
下記式(3)で表される構造を有する、上記[7]に記載の樹脂。
Lは、置換基を有していてもよい炭素数1~30のアルキレン基、置換基を有していてもよい炭素数6~30のアリーレン基、置換基を有していてもよい炭素数1~30のアルコキシレン基又は単結合であり、前記アルキレン基、前記アリーレン基、前記アルコキシレン基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、
R0は、前記RYと同義であり、
R1は、炭素数1~60のn価の基又は単結合であり、
R2~R5は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
m2及びm3は、各々独立して、0~8の整数であり、
m4及びm5は、各々独立して、0~9の整数であり、
但し、m2、m3、m4及びm5は同時に0になることはなく、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基である。)
[9]
下記式(4)で表される構造を有する、上記[7]に記載の樹脂。
R0Aは、前記RYと同義であり、
R1Aは、炭素数1~30のnA価の基又は単結合であり、
R2Aは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2Aの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
nAは、前記Nと同義であり、ここで、nAが2以上の整数の場合、nA個の[ ]内の構造式は同一であっても異なっていてもよく、
XAは、酸素原子、硫黄原子又は無架橋であることを示し、
m2Aは、各々独立して、0~7の整数であり、但し、少なくとも1つのm2Aは1~7の整数であり、
qAは、各々独立して、0又は1である。)
[10]
上記[1]~[6]のいずれかに記載の化合物及び上記[7]~[9]のいずれかに記載の樹脂からなる群より選ばれる1種以上を含有する、組成物。
[11]
溶媒をさらに含有する、上記[10]に記載の組成物。
[12]
酸発生剤をさらに含有する、上記[10]又は[11]に記載の組成物。
[13]
架橋剤をさらに含有する、上記[10]~[12]のいずれかに記載の組成物。
[14]
前記架橋剤は、フェノール化合物、エポキシ化合物、シアネート化合物、アミノ化合物、ベンゾオキサジン化合物、メラミン化合物、グアナミン化合物、グリコールウリル化合物、ウレア化合物、イソシアネート化合物及びアジド化合物からなる群より選ばれる少なくとも1種である、前記[13]に記載の組成物。
[15]
前記架橋剤は、少なくとも1つのアリル基を有する、前記[13]又は[14]に記載の組成物。
[16]
前記架橋剤の含有割合が、前記[1]~[6]のいずれかに記載の化合物及び前記[7]~[9]のいずれか一項に記載の樹脂からなる群より選ばれる1種以上を含有する組成物の合計質量を100質量部とした場合に、0.1~100質量部である、前記[13]~[15]のいずれかに記載の組成物。
[17]
架橋促進剤をさらに含有する、前記[13]~[16]のいずれかに記載の組成物。
[18]
前記架橋促進剤は、アミン類、イミダゾール類、有機ホスフィン類、及びルイス酸からなる群より選ばれる少なくとも1種である、前記[17]に記載の組成物。
[19]
前記架橋促進剤の含有割合が、前記[1]~[6]のいずれかに記載の化合物及び前記[7]~[9]のいずれかに記載の樹脂からなる群より選ばれる1種以上を含有する組成物の合計質量を100質量部とした場合に、0.1~5質量部である、前記[17]又は[18]に記載の組成物。
[20] ラジカル重合開始剤をさらに含有する、前記[10]~[19]のいずれか一つに記載の組成物。
[21] 前記ラジカル重合開始剤は、ケトン系光重合開始剤、有機過酸化物系重合開始剤及びアゾ系重合開始剤からなる群より選ばれる少なくとも1種である、前記[10]~[20]のいずれか一つに記載の組成物。
[22] 前記ラジカル重合開始剤の含有割合が、前記[1]~[6]のいずれか一つに記載の化合物及び前記[7]~[9]のいずれか一項に記載の樹脂からなる群より選ばれる1種以上を含有する組成物の合計質量を100質量部とした場合に、0.05~25質量部である、前記[10]~[21]のいずれか一つに記載の組成物。
[23] リソグラフィー用膜形成に用いられる、前記[10]~[22]のいずれか一つに記載の組成物。
[24] レジスト永久膜形成に用いられる、前記[10]~[22]のいずれか一つに記載の組成物。
[25] 光学部品形成に用いられる、前記[10]~[22]のいずれか一つに記載の組成物。
[26] 基板上に、前記[23]に記載の組成物を用いてフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像を行う工程を含む、レジストパターン形成方法。
[27] 基板上に、前記[23]に記載の組成物を用いて下層膜を形成し、前記下層膜上に、少なくとも1層のフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像を行う工程を含む、レジストパターン形成方法。
[28] 基板上に、前記[23]に記載の組成物を用いて下層膜を形成し、前記下層膜上に、レジスト中間層膜材料を用いて中間層膜を形成し、前記中間層膜上に、少なくとも1層のフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像してレジストパターンを形成し、その後、前記レジストパターンをマスクとして前記中間層膜をエッチングし、得られた中間層膜パターンをエッチングマスクとして前記下層膜をエッチングし、得られた下層膜パターンをエッチングマスクとして基板をエッチングすることにより基板にパターンを形成する工程を含む、回路パターン形成方法。
また、本実施形態における化合物及び樹脂は、感光性材料に用いた際の感度や解像度に優れるものであり、耐熱性の高さを維持しつつ、更に、汎用有機溶剤や他の化合物、樹脂成分、および添加剤との相溶性に優れるレジスト永久膜を形成するために有用である。
さらには、屈折率が高く、また低温から高温までの広範囲の熱処理による着色が抑制されることから、各種光学形成組成物としても有用である。
本実施形態における化合物は、下記式(0)で表される。
RZは、炭素数1~60のN価の基又は単結合であり、
RTは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、RTの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
Xは、酸素原子、硫黄原子又は無架橋であることを示し、
mは、各々独立して0~9の整数であり、ここで、mの少なくとも1つは1~9の整数であり、
Nは、1~4の整数であり、ここで、Nが2以上の整数の場合、N個の[ ]内の構造式は同一であっても異なっていてもよく、
rは、各々独立して0~2の整数である。)
ここで、水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基とは、アリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基を有する基であり、例えば、アリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基等が挙げられる。
本実施形態における化合物(0)は、耐熱性および溶媒溶解性の観点から、下記式(1)で表される化合物であることが好ましい。
R1は炭素数1~60のn価の基又は単結合であり、R1を介して各々の芳香環が結合している。
R2~R5は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含む。
m2及びm3は、各々独立して、0~8の整数であり、m4及びm5は、各々独立して、0~9の整数である。但し、m2、m3、m4及びm5は同時に0になることはない。
nは1~4の整数である。ここで、nが2以上の整数の場合、n個の[ ]内の構造式は同一であっても異なっていてもよい。
p2~p5は各々独立して0~2の整数である。
ここで、前記アルキル基、アルケニル基及びアルコキシ基は、直鎖状、分岐状若しくは環状の基であってもよい。
R0、R1、R4、R5、n、p2~p5、m4及びm5は、前記と同義であり、
R6~R7は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、
R10~R11は、各々独立して、水素原子又はアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
ここで、R10~R11の少なくとも1つはアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
m6及びm7は、各々独立して0~7の整数であり、
但し、m4、m5、m6及びm7は同時に0になることはない。
R0、R1、R6、R7、R10、R11、n、p2~p5、m6及びm7は、前記と同義であり、
R8~R9は、前記R6~R7と同義であり、
R12~R13は、前記R10~R11と同義であり、
m8及びm9は、各々独立して、0~8の整数である。
但し、m6、m7、m8及びm9は同時に0になることはない。
本実施形態における式(1)で表される化合物は、公知の手法を応用して適宜合成することができ、その合成手法は特に限定されない。
例えば、常圧下、ビフェノール類、ビナフトール類又はビアントラセンオールと、対応するアルデヒド類又はケトン類とを酸触媒下にて重縮合反応させることによりポリフェノール化合物を得て、続いて、ポリフェノール化合物の少なくとも1つのフェノール性水酸基に、ヒドロキシアルキル基を導入して、そのヒドロキシ基に、アリル基、アクリル基またはメタアクリル基から選ばれる1つの基を導入することにより得ることができる。また、必要に応じて、加圧下で行うこともできる。
アリル基、アクリル基またはメタアクリル基から選ばれる1つの基を導入するタイミングは、ヒドロキシアルキル基を導入した後であればよく、縮合反応の前段階、後段階または後述する樹脂の製造を行なった後に導入してもよい。
アルデヒド類又はケトン類としては、高い耐熱性及び高いエッチング耐性を兼備するという観点から、芳香環を有するアルデヒド又は芳香族を有するケトンを用いることが好ましい。
例えば、以下のようにして、前記化合物の少なくとも1つのフェノール性水酸基にヒドロキシアルキル基を導入することができる。
ヒドロキシアルキル基は、オキシアルキル基を介してフェノール性水酸基に導入することもでき、例えば、ヒドロキシアルキルオキシアルキル基やヒドロキシアルキルオキシアルキルオキシアルキル基が導入される。
ヒドロキシアルキル基を導入するための化合物は、公知の方法で合成もしくは容易に入手でき、例えば、クロロエタノール、ブロモエタノール、酢酸-2-クロロエチル、酢酸-2-ブロモエチル、酢酸-2-ヨードエチル、エチレンオキサイド、プロピレンオキサイド、ブチレンオキサイド、エチレンカーボネート、プロピレンカーボネート、ブチレンカーボネートが挙げられるが、これらに特に限定はされない。
エチレンカーボネート、プロピレンカーボネート、ブチレンカーボネートを使用する場合、アルキレンカーボネートを付加させ、脱炭酸反応が生じることにより、ヒドロキシアルキル基が導入される。
前記式(1)で表される化合物は、リソグラフィー用膜形成や光学部品形成に用いられる組成物(以下、単に「組成物」ともいう。)として、そのまま使用することができる。また、前記式(1)で表される化合物をモノマーとして得られる樹脂を、組成物として使用することもできる。樹脂は、例えば、前記式(1)で表される化合物と架橋反応性のある化合物とを反応させて得られる。
前記式(1)で表される化合物をモノマーとして得られる樹脂としては、例えば、以下の式(3)で表される構造を有するものが挙げられる。すなわち、本実施形態における組成物は、下記式(3)で表される構造を有する樹脂を含有するものであってもよい。
R0、R1、R2~R5、m2及びm3、m4及びm5、p2~p5、nは前記式(1)におけるものと同義である。
但し、m2、m3、m4及びm5は同時に0になることはなく、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基である。
本実施形態における樹脂は、上記式(1)で表される化合物を、架橋反応性のある化合物と反応させることにより得られる。架橋反応性のある化合物としては、前記式(1)で表される化合物をオリゴマー化又はポリマー化し得るものである限り、公知のものを特に制限なく使用することができる。その具体例としては、例えば、アルデヒド、ケトン、カルボン酸、カルボン酸ハライド、ハロゲン含有化合物、アミノ化合物、イミノ化合物、イソシアネート、不飽和炭化水素基含有化合物等が挙げられるが、これらに特に限定されない。
本実施形態における化合物(0)は、耐熱性および溶媒溶解性の観点から、下記式(2)で表される化合物であることが好ましい。
R1Aは、炭素数1~60のnA価の基又は単結合であり、
R2Aは、各々独立して、置換基を有していてもよい炭素数1~30の直鎖状、分岐状若しくは環状のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2Aの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含む。
nAは1~4の整数であり、ここで、式(2)中、nAが2以上の整数の場合、
nA個の[ ]内の構造式は同一であっても異なっていてもよい。
XAは、各々独立して、酸素原子、硫黄原子又は無架橋であることを示す。ここで、XAは、優れた耐熱性を発現する傾向にあるため、酸素原子又は硫黄原子であることが好ましく、酸素原子であることがより好ましい。XAは、溶解性の観点からは、無架橋であることが好ましい。
m2Aは、各々独立して、0~6の整数である。但し、少なくとも1つのm2Aは1~6の整数である。
qAは、各々独立して、0又は1である。
R3Aは、置換基を有していてもよい炭素数1~30の直鎖状、分岐状若しくは環状のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、同一のナフタレン環又はベンゼン環において同一であっても異なっていてもよい。
R4Aは、各々独立して、水素原子又はアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、ここで、R4Aの少なくとも1つはアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
m6Aは、各々独立して、0~5の整数である。
本実施形態における式(2)で表される化合物は、公知の手法を応用して適宜合成することができ、その合成手法は特に限定されない。
例えば、常圧下、フェノール類、ナフトール類と、対応するアルデヒド類又はケトン類とを酸触媒下にて重縮合反応させることによりポリフェノール化合物を得て、続いて、ポリフェノール化合物の少なくとも1つのフェノール性水酸基に、ヒドロキシアルキル基を導入して、そのヒドロキシ基にアリル基、アクリル基またはメタアクリル基から選ばれる1つの基を導入することにより得ることができる。また、必要に応じて、加圧下で行うこともできる。
アリル基、アクリル基またはメタアクリル基から選ばれる1つの基を導入するタイミングは、ヒドロキシアルキル基を導入した後であればよく、縮合反応の前段階、後段階または後述する樹脂の製造を行なった後に導入してもよい。
ケトン類としては、高い耐熱性及び高いエッチング耐性を兼備するという観点から、芳香環を有するケトンを用いることが好ましい。
例えば、以下のようにして、前記化合物の少なくとも1つのフェノール性水酸基にヒドロキシアルキル基を導入することができる。
ヒドロキシアルキル基は、オキシアルキル基を介してフェノール性水酸基に導入することもできる。例えば、ヒドロキシアルキルオキシアルキル基やヒドロキシアルキルオキシアルキルオキシアルキル基が導入される。
ヒドロキシアルキル基を導入するための化合物は、公知の方法で合成もしくは容易に入手でき、例えば、クロロエタノール、ブロモエタノール、酢酸-2-クロロエチル、酢酸-2-ブロモエチル、酢酸-2-ヨードエチル、エチレンオキサイド、プロピレンオキサイド、ブチレンオキサイド、エチレンカーボネート、プロピレンカーボネート、ブチレンカーボネートが挙げられるが、これらに特に限定はされない。
エチレンカーボネート、プロピレンカーボネート、ブチレンカーボネートを使用する場合、アルキレンカーボネートを付加させ、脱炭酸反応が生じることにより、ヒドロキシアルキル基が導入される。
前記式(2)で表される化合物は、リソグラフィー用膜形成組成物や光学部品形成に用いられる組成物として、そのまま使用することができる。また、前記式(2)で表される化合物をモノマーとして得られる樹脂を、組成物として使用することができる。樹脂は、例えば、前記式(2)で表される化合物と架橋反応性のある化合物とを反応させて得られる。
前記式(2)で表される化合物をモノマーとして得られる樹脂としては、例えば、以下の式(4)で表される構造を有するものが挙げられる。すなわち、本実施形態における組成物は、下記式(4)で表される構造を有する樹脂を含有するものであってもよい。
R0A、R1A、R2A、m2A、nA、qA及びXAは前記式(2)におけるものと同義であり、
但し、nAが2以上の整数の場合、nA個の[ ]内の構造式は同一であっても異なっていてもよく、少なくとも1つのm2Aは1~6の整数であり、R2Aの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含む。
本実施形態における樹脂は、上記式(2)で表される化合物を、架橋反応性のある化合物と反応させることにより得られる。架橋反応性のある化合物としては、前記式(2)で表される化合物をオリゴマー化又はポリマー化し得るものである限り、公知のものを特に制限なく使用することができる。その具体例としては、例えば、アルデヒド、ケトン、カルボン酸、カルボン酸ハライド、ハロゲン含有化合物、アミノ化合物、イミノ化合物、イソシアネート、不飽和炭化水素基含有化合物等が挙げられるが、これらに特に限定されない。
本実施形態における化合物及び/又は樹脂の精製方法は、前記式(1)で表される化合物、前記式(1)で表される化合物をモノマーとして得られる樹脂、前記式(2)で表される化合物、及び前記式(2)で表される化合物をモノマーとして得られる樹脂から選ばれる1種以上を、溶媒に溶解させて溶液(S)を得る工程と、得られた溶液(S)と酸性の水溶液とを接触させて、前記化合物及び/又は前記樹脂中の不純物を抽出する工程(第一抽出工程)とを含み、前記溶液(S)を得る工程で用いる溶媒が、水と任意に混和しない溶媒を含む。
第一抽出工程において、上記樹脂は、上記式(1)で表される化合物及び/又は式(2)で表される化合物と架橋反応性のある化合物との反応によって得られる樹脂であることが好ましい。本実施形態の精製方法によれば、上述した特定の構造を有する化合物又は樹脂に不純物として含まれ得る種々の金属の含有量を低減することができる。
より詳細には、本実施形態の精製方法においては、前記化合物及び/又は前記樹脂を、水と任意に混和しない有機溶媒に溶解させて溶液(S)を得て、さらにその溶液(S)を酸性水溶液と接触させて抽出処理を行うことができる。これにより、前記溶液(S)に含まれる金属分を水相に移行させた後、有機相と水相とを分離して金属含有量の低減された化合物及び/又は樹脂を得ることができる。
本実施形態におけるリソグラフィー用膜形成組成物は、前記式(1)で表される化合物、前記式(1)で表される化合物をモノマーとして得られる樹脂、前記式(2)で表される化合物、及び前記式(2)で表される化合物をモノマーとして得られる樹脂からなる群より選ばれる1種以上を含有する。
本実施形態における化学増幅型レジスト用途向けリソグラフィー用膜形成組成物(以下、「レジスト組成物」ともいう。)は、前記式(1)で表される化合物、前記式(1)で表される化合物をモノマーとして得られる樹脂、前記式(2)で表される化合物、及び前記式(2)で表される化合物をモノマーとして得られる樹脂からなる群より選ばれる1種以上をレジスト基材として含有する。
本実施形態のレジスト組成物において、レジスト基材として用いる化合物及び/又は樹脂の含有量は、特に限定されないが、固形成分の全質量(レジスト基材、酸発生剤(C)、架橋剤(G)、酸拡散制御剤(E)及びその他の成分(F)等の任意に使用される成分を含む固形成分の総和、以下同様。)の50~99.4質量%であることが好ましく、より好ましくは55~90質量%、さらに好ましくは60~80質量%、特に好ましくは60~70質量%である。レジスト基材として用いる化合物及び/又は樹脂の含有量が上記範囲である場合、解像度が一層向上し、ラインエッジラフネス(LER)が一層小さくなる傾向にある。
なお、レジスト基材として化合物と樹脂の両方を含有する場合、前記含有量は、両成分の合計量である。
本実施形態におけるレジスト組成物には、本発明の目的を阻害しない範囲で、必要に応じて、レジスト基材、酸発生剤(C)、架橋剤(G)および酸拡散制御剤(E)以外の成分として、溶解促進剤、溶解制御剤、増感剤、界面活性剤、有機カルボン酸又はリンのオキソ酸若しくはその誘導体、熱および/または光硬化触媒、重合禁止剤、難燃剤、充填剤、カップリング剤、熱硬化性樹脂、光硬化性樹脂、染料、顔料、増粘剤、滑剤、消泡剤、レベリング剤、紫外線吸収剤、界面活性剤、着色剤、ノニオン系界面活性剤等の各種添加剤を、1種又は2種以上添加することができる。なお、本明細書において、その他の成分(F)を任意成分(F)ということがある。
好ましくは50~99.4/0.001~49/0.5~49/0.001~49/0~49、
より好ましくは55~90/1~40/0.5~40/0.01~10/0~5、
さらに好ましくは60~80/3~30/1~30/0.01~5/0~1、
特に好ましくは60~70/10~25/2~20/0.01~3/0、である。
各成分の配合割合は、その総和が100質量%になるように各範囲から選ばれる。各成分の配合割合が上記範囲である場合、感度、解像度、現像性等の性能に優れる傾向にある。
本実施形態のレジスト組成物を用いて、スピンコートによりアモルファス膜を形成することができる。また、本実施形態のレジスト組成物は、一般的な半導体製造プロセスに適用することができる。上記式(1)及び/又は式(2)で表される化合物、これらをモノマーとして得られる樹脂の種類及び/又は用いる現像液の種類によって、ポジ型レジストパターン及びネガ型レジストパターンのいずれかを作り分けることができる。
本実施形態の非化学増幅型レジスト用途向けリソグラフィー用膜形成組成物(以下、「感放射線性組成物」ともいう。)に含有させる成分(A)は、後述するジアゾナフトキノン光活性化合物(B)と併用し、g線、h線、i線、KrFエキシマレーザー、ArFエキシマレーザー、極端紫外線、電子線又はX線を照射することにより、現像液に易溶な化合物となるポジ型レジスト用基材として有用である。g線、h線、i線、KrFエキシマレーザー、ArFエキシマレーザー、極端紫外線、電子線又はX線により、成分(A)の性質は大きくは変化しないが、現像液に難溶なジアゾナフトキノン光活性化合物(B)が易溶な化合物に変化するため、現像工程によってレジストパターンを作ることが可能となる。
本実施形態の感放射線性組成物に含有させるジアゾナフトキノン光活性化合物(B)は、ポリマー性及び非ポリマー性ジアゾナフトキノン光活性化合物を含むジアゾナフトキノン物質であり、一般にポジ型レジスト組成物において、感光性成分(感光剤)として用いられているものであれば特に制限なく、1種又は2種以上を任意に選択して用いることができる。
また、ナフトキノンジアジドスルホン酸クロライドやベンゾキノンジアジドスルホン酸クロライド等の酸クロライドとしては、例えば、1、2-ナフトキノンジアジド-5-スルフォニルクロライド、1、2-ナフトキノンジアジド-4-スルフォニルクロライド等が好ましいものとして挙げられる。
本実施形態の感放射線性組成物を用いて、スピンコートによりアモルファス膜を形成することができる。また、本実施形態の感放射線性組成物は、一般的な半導体製造プロセスに適用することができる。用いる現像液の種類によって、ポジ型レジストパターン及びネガ型レジストパターンのいずれかを作り分けることができる。
本実施形態の感放射線性組成物において、成分(A)の含有量は、固形成分全重量(成分(A)、ジアゾナフトキノン光活性化合物(B)及びその他の成分(D)等の任意に使用される固形成分の総和、以下同様。)に対して、好ましくは1~99質量%であり、より好ましくは5~95質量%、さらに好ましくは10~90質量%、特に好ましくは25~75質量%である。本実施形態の感放射線性組成物は、成分(A)の含有量が上記範囲内であると、高感度でラフネスの小さなパターンを得ることができる傾向にある。
本実施形態の感放射線性組成物には、本発明の目的を阻害しない範囲で、必要に応じて、成分(A)及びジアゾナフトキノン光活性化合物(B)以外の成分として、酸発生剤、架橋剤、酸拡散制御剤、溶解促進剤、溶解制御剤、増感剤、界面活性剤、有機カルボン酸又はリンのオキソ酸若しくはその誘導体、熱および/または光硬化触媒、重合禁止剤、難燃剤、充填剤、カップリング剤、熱硬化性樹脂、光硬化性樹脂、染料、顔料、増粘剤、滑剤、消泡剤、レベリング剤、紫外線吸収剤、界面活性剤、着色剤、ノニオン系界面活性剤等の各種添加剤を1種又は2種以上添加することができる。なお、本明細書において、その他の成分(D)を任意成分(D)ということがある。
好ましくは1~99/99~1/0~98、
より好ましくは5~95/95~5/0~49、
さらに好ましくは10~90/90~10/0~10、
さらにより好ましくは20~80/80~20/0~5、
特に好ましくは25~75/75~25/0、である。
各成分の配合割合は、その総和が100質量%になるように各範囲から選ばれる。本実施形態の感放射線性組成物の各成分の配合割合が上記範囲である場合、ラフネスに加え、感度、解像度等の性能に優れる傾向にある。
本実施形態におけるレジストパターンの形成方法は、上述した本実施形態のレジスト組成物又は感放射線性組成物を用いて基板上にフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像を行う工程を含む。
より詳しくは、上述した本実施形態のレジスト組成物又は感放射線性組成物を用いて基板上にレジスト膜を形成する工程と、形成されたレジスト膜を露光する工程と、前記レジスト膜を現像してレジストパターンを形成する工程とを備える。本実施形態におけるレジストパターンは、多層プロセスにおける上層レジストとして形成することもできる。
本実施形態における下層膜用途向けリソグラフィー用膜形成組成物(以下、「下層膜形成材料」ともいう。)は、上記式(1)表される化合物、上記式(1)表される化合物をモノマーとして得られる樹脂、式(2)で表される化合物及び式(2)で表される化合物をモノマーとして得られる樹脂からなる群より選ばれる少なくとも1種の物質を含有する。本実施形態において前記物質は塗布性及び品質安定性の点から、下層膜形成材料中、1~100質量%であることが好ましく、10~100質量%であることがより好ましく、50~100質量%であることがさらに好ましく、100質量%であることが特に好ましい。
本実施形態における下層膜形成材料は、溶媒を含有してもよい。下層膜形成材料に用いられる溶媒としては、上述した物質が少なくとも溶解するものであれば、公知のものを適宜用いることができる。
本実施形態における下層膜形成材料は、インターミキシングを抑制する等の観点から、必要に応じて架橋剤を含有していてもよい。架橋剤としては特に限定されないが、例えば、国際公開第2013/024779号に記載されたものを用いることができる。
本実施形態の下層膜形成材料には、必要に応じて、架橋、硬化反応を促進させるための架橋促進剤を用いることができる。
本実施形態の下層膜形成材料には、必要に応じてラジカル重合開始剤を配合することができる。ラジカル重合開始剤としては、光によりラジカル重合を開始させる光重合開始剤であってもよいし、熱によりラジカル重合を開始させる熱重合開始剤であってもよい。
本実施形態における下層膜形成材料は、熱による架橋反応をさらに促進させる等の観点から、必要に応じて酸発生剤を含有していてもよい。酸発生剤としては、熱分解によって酸を発生するもの、光照射によって酸を発生するものなどが知られているが、いずれも使用することができる。酸発生剤としては、例えば、国際公開第2013/024779号に記載されたものを用いることができる。
本実施形態における下層膜形成材料は、保存安定性を向上させる等の観点から、塩基性化合物を含有していてもよい。
また、本実施形態における下層膜形成材料は、熱や光による硬化性の付与や吸光度をコントロールする目的で、他の樹脂及び/又は化合物を含有していてもよい。このような他の樹脂及び/又は化合物としては、ナフトール樹脂、キシレン樹脂ナフトール変性樹脂、ナフタレン樹脂のフェノール変性樹脂;ポリヒドロキシスチレン、ジシクロペンタジエン樹脂、(メタ)アクリレート、ジメタクリレート、トリメタクリレート、テトラメタクリレート、ビニルナフタレン、ポリアセナフチレン等のナフタレン環、フェナントレンキノン、フルオレン等のビフェニル環、チオフェン、インデン等のヘテロ原子を有する複素環を含む樹脂や芳香族環を含まない樹脂;ロジン系樹脂、シクロデキストリン、アダマンタン(ポリ)オール、トリシクロデカン(ポリ)オール及びそれらの誘導体等の脂環構造を含む樹脂又は化合物等が挙げられるが、これらに特に限定されない。さらに、本実施形態における下層膜形成材料は、公知の添加剤を含有していてもよい。公知の添加剤としては、以下に限定されないが、例えば、熱および/または光硬化触媒、重合禁止剤、難燃剤、充填剤、カップリング剤、熱硬化性樹脂、光硬化性樹脂、染料、顔料、増粘剤、滑剤、消泡剤、レベリング剤、紫外線吸収剤、界面活性剤、着色剤、ノニオン系界面活性剤等が挙げられる。
本実施形態におけるリソグラフィー用下層膜は、上述した下層膜形成材料から形成される。
前記フォトレジスト層の所定の領域に放射線を照射し、現像してレジストパターンを形成する工程、
前記レジストパターンをマスクとして前記中間層膜をエッチングし、得られた中間層膜パターンをエッチングマスクとして前記下層膜をエッチングし、得られた下層膜パターンをエッチングマスクとして基板をエッチングすることにより基板にパターンを形成する工程、を含む。
より詳しくは、基板上に、本実施形態の下層膜形成材料を用いて下層膜を形成する工程(B-1)と、前記下層膜上に、珪素原子を含有するレジスト中間層膜材料を用いて中間層膜を形成する工程(B-2)と、前記中間層膜上に、少なくとも1層のフォトレジスト層を形成する工程(B-3)と、前記工程(B-3)の後、前記フォトレジスト層の所定の領域に放射線を照射し、現像してレジストパターンを形成する工程(B-4)と、前記工程(B-4)の後、前記レジストパターンをマスクとして前記中間層膜をエッチングし、得られた中間層膜パターンをエッチングマスクとして前記下層膜をエッチングし、得られた下層膜パターンをエッチングマスクとして基板をエッチングすることで基板にパターンを形成する工程(B-5)と、を有する。
(炭素濃度及び酸素濃度)
有機元素分析により炭素濃度及び酸素濃度(質量%)を測定した。
装置:CHNコーダーMT-6(ヤナコ分析工業(株)製)
化合物の分子量は、Water社製Acquity UPLC/MALDI-Synapt HDMSを用いて、LC-MS分析により測定した。
また、以下の条件でゲル浸透クロマトグラフィー(GPC)分析を行い、ポリスチレン換算の重量平均分子量(Mw)、数平均分子量(Mn)、及び分散度(Mw/Mn)を求めた。
装置:Shodex GPC-101型(昭和電工(株)製)
カラム:KF-80M×3
溶離液:THF 1mL/min
温度:40℃
23℃にて、化合物をプロピレングリコールモノメチルエーテル(PGME)、シクロヘキサノン(CHN)、乳酸エチル(EL)、メチルアミルケトン(MAK)またはテトラメチルウレア(TMU)に対して3質量%溶液になるよう攪拌して溶解させ、1週間後の結果を以下の基準で評価した。
評価A:いずれかの溶媒で析出物がないことを目視により確認した
評価C:全ての溶媒で析出物あることを目視により確認した
化合物の構造は、Bruker社製「Advance600II spectrometer」を用いて、以下の条件で、1H-NMR測定を行い、確認した。
周波数:400MHz
溶媒:d6-DMSO
内部標準:TMS
測定温度:23℃
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に2,6-ナフタレンジオール(シグマ-アルドリッチ社製試薬)3.20g(20mmol)と4-ビフェニルカルボキシアルデヒド(三菱瓦斯化学社製)1.82g(10mmol)とを30mlメチルイソブチルケトンに仕込み、95%の硫酸5mlを加えて、反応液を100℃で6時間撹拌して反応を行った。次に反応液を濃縮し、純水50gを加えて反応生成物を析出させ、室温まで冷却した後、濾過を行って分離した。得られた固形物を濾過し、乾燥させた後、カラムクロマトグラフによる分離精製を行い、下記式で示される目的化合物を3.05g得た。400MHz-1H-NMRにより下記式の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)9.7(2H,O-H)、7.2~8.5(19H,Ph-H)、6.6(1H,C-H)
なお、2,6-ナフタレンジオールの置換位置が1位であることは、3位と4位のプロトンのシグナルがダブレットであることから確認した。
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に上記式で示される化合物(XBisN-1)10g(21mmol)と炭酸カリウム14.8g(107mmol)とを50mlジメチルホルムアミドに仕込み、酢酸-2-クロロエチル6.56g(54mmol)を加えて、反応液を90℃で12時間撹拌して反応を行った。次に反応液を氷浴で冷却し結晶を析出させ、濾過を行って分離した。続いて攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に前記結晶40g、メタノール40g、THF100g及び24%水酸化ナトリウム水溶液を仕込み、反応液を還流下で4時間撹拌して反応を行った。その後、氷浴で冷却し、反応液を濃縮し析出した固形物を濾過し、乾燥させた後、カラムクロマトグラフによる分離精製を行い、下記式で示される目的化合物を5.9g得た。400MHz-1H-NMRにより下記式の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)8.6(2H,O-H)、7.2~7.8(19H,Ph-H)、6.7(1H,C-H)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に上記式(E-XBisN-1)で表される化合物10.3g(21mmol)と炭酸カリウム6.2g(45mmol)とを100mlアセトンに加えた液を仕込み、さらに臭化アリル5.4(45mmol)gおよび10-クラウン-6を2.0g加えて、得られた反応液を還流下で9時間撹拌して反応を行なった。次に反応液から固形分をろ過で除去し、氷浴で冷却し、反応液を濃縮し固形物を析出させた。析出した固形物をろ過し、乾燥させた後、カラムクロマトグラフによる分離精製を行い、下記式(AlE-XBisN-1)で表される目的化合物3.2gを得た。
400MHz-1H-NMRにより、下記式(AlE-XBisN-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)7.2~7.8(19H,Ph-H)、6.7(1H,C-H)、6.1(2H,-CH-CH2)、5.4~5.5(4H,-CH-CH2)、4.7(4H,-O-CH2-)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)
熱分解温度は390℃、ガラス転移点は105℃、融点は205℃であり、高耐熱性を有することが確認できた。
上記臭化アリルの代わりに、アクリル酸を用いたこと以外は合成実施例1-1と同様に反応させ、下記式(AcE-XBisN-1)で表される目的化合物4.0gを得た。
400MHz-1H-NMRにより、下記式(AcE-XBisN-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)7.2~7.8(19H,Ph-H)、6.7(1H,C-H)、5.8~6.4(6H,-CH-CH2)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)
攪拌機、冷却管及びビュレットを備えた内容積200mlの容器を準備した。この容器に、4,4-ビフェノール(東京化成社製試薬)30g(161mmol)と、4-ビフェニルアルデヒド(三菱瓦斯化学社製)15g(82mmol)と、酢酸ブチル100mlとを仕込み、p-トルエンスルホン酸(関東化学社製試薬)3.9g(21mmol)を加えて、反応液を調製した。この反応液を90℃で3時間撹拌して反応を行った。次に、反応液を濃縮し、ヘプタン50gを加えて反応生成物を析出させ、室温まで冷却した後、濾過を行って分離した。濾過により得られた固形物を乾燥させた後、カラムクロマトグラフによる分離精製を行うことにより、下記式で表される目的化合物(BisF-1)5.8gを得た。
なお、400MHz-1H-NMRにより以下のピークが見出され、下記式の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)9.4(4H,O-H)、6.8~7.8(22H,Ph-H)、6.2(1H,C-H)
得られた化合物について、前記方法により分子量を測定した結果、536であった。
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に上記式(BisF-1)で表される化合物11.2g(21mmol)と炭酸カリウム14.8g(107mmol)とを50mlジメチルホルムアミドに仕込み、酢酸-2-クロロエチル6.56g(54mmol)を加えて、反応液を90℃で12時間撹拌して反応を行った。次に反応液を氷浴で冷却し結晶を析出させ、濾過を行って分離した。続いて攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に前記結晶40g、メタノール40g、THF100g及び24%水酸化ナトリウム水溶液を仕込み、反応液を還流下で4時間撹拌して反応を行った。その後、氷浴で冷却し、反応液を濃縮し析出した固形物を濾過し、乾燥させた後、カラムクロマトグラフによる分離精製を行い、下記式(E-BisF-1)で表される目的化合物5.9gを得た。
400MHz-1H-NMRにより、下記式(E-BisF-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)8.6(4H,O-H)、6.8~7.8(22H,Ph-H)、6.2(1H,C-H)、4.0(8H,-O-CH2-)、3.8(8H,-CH2-OH)
得られた化合物について、前記方法により分子量を測定した結果、712であった。
上記式(E-XBisN-1)で表される化合物の代わりに、上記式(E-BisF-1)で表される化合物を用いたこと以外は合成実施例1-1と同様に反応させ、下記式(AlE-BisF-1)で表される目的化合物3.0gを得た。
400MHz-1H-NMRにより、下記式(AlE-BisF-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)6.8~7.8(22H,Ph-H)、6.2(1H,C-H)、6.1(4H,-CH-CH2)、5.4~5.5(8H,-CH-CH2)、4.7(8H,-O-CH2-)、4.0(8H,-O-CH2-)、3.8(8H,-CH2-OH)
熱分解温度は380℃、ガラス転移点は70℃、融点は200℃であり、高耐熱性を有することが確認できた。
上記式(E-XBisN-1)で表される化合物の代わりに、上記式(E-BisF-1)で表される化合物を用い、臭化アリルの代わりに、アクリル酸を用いたこと以外、合成実施例1-1と同様に反応させ、下記式(AcE-BisF-1)で表される目的化合物3.3gを得た。
400MHz-1H-NMRにより、下記式(AcE-BisF-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)6.8~7.8(22H,Ph-H)、6.2(1H,C-H)、5.8~6.4(6H,-CH-CH2)、4.0(8H,-O-CH2-)、3.8(8H,-CH2-OH)
熱分解温度は375℃、ガラス転移点は65℃、融点は190℃であり、高耐熱性を有することが確認できた。
攪拌機、冷却管及びビュレットを備えた内容積300mLの容器において、2-ナフトール(シグマ-アルドリッチ社製試薬)10g(69.0mmol)を120℃で溶融後、硫酸0.27gを仕込み、4-アセチルビフェニル(シグマ-アルドリッチ社製試薬)2.7g(13.8mmol)を加えて、内容物を120℃で6時間撹拌して反応を行って反応液を得た。次に反応液にN-メチル-2-ピロリドン(関東化学株式会社製)100mL、純水50mLを加えたあと、酢酸エチルにより抽出した。次に純水を加えて中性になるまで分液後、濃縮を行って溶液を得た。
得られた溶液を、カラムクロマトによる分離後、下記式(BiN-1)で表される目的化合物(BiN-1)が1.0g得られた。
得られた化合物(BiN-1)について、上述の方法により分子量を測定した結果、466であった。
得られた化合物(BiN-1)について、上述の測定条件で、NMR測定を行ったところ、以下のピークが見出され、下記式(BiN-1)の化学構造を有することを確認した。
δ(ppm)9.69(2H,O-H)、7.01~7.67(21H,Ph-H)、2.28(3H,C-H)
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に上記式で示される化合物(BiN-1)10.5g(21mmol)と炭酸カリウム14.8g(107mmol)とを50mlジメチルホルムアミドに仕込み、酢酸-2-クロロエチル6.56g(54mmol)を加えて、反応液を90℃で12時間撹拌して反応を行った。次に反応液を氷浴で冷却し結晶を析出させ、濾過を行って分離した。続いて攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に前記結晶40g、メタノール40g、THF100g及び24%水酸化ナトリウム水溶液を仕込み、反応液を還流下で5時間撹拌して反応を行った。その後、氷浴で冷却し、反応液を濃縮し析出した固形物を濾過し、乾燥させた後、カラムクロマトグラフによる分離精製を行い、下記式で示される目的化合物を4.6g得た。400MHz-1H-NMRにより下記式の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)8.6(2H,O-H)、7.2~7.8(19H,Ph-H)、6.7(1H,C-H)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に上記式(E-BiN-1)で表される化合物12.3g(21mmol)と炭酸カリウム6.2g(45mmol)とを100mlアセトンに加えた液を仕込み、さらに臭化アリル5.4g(45mmol)および10-クラウン-6を2.0g加えて、得られた反応液を還流下で7時間撹拌して反応を行なった。次に反応液から固形分をろ過で除去し、氷浴で冷却し、反応液を濃縮し固形物を析出させた。析出した固形物をろ過し、乾燥させた後、カラムクロマトグラフによる分離精製を行い、下記式(AlE-BiN-1)で表される目的化合物4.0gを得た。
400MHz-1H-NMRにより、下記式(AlE-BiN-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)7.2~7.8(19H,Ph-H)、6.7(1H,C-H)、6.1(2H,-CH-CH2)、5.4~5.5(4H,-CH-CH2)、4.7(4H,-O-CH2-)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)
熱分解温度は380℃、ガラス転移点は115℃、融点は215℃であり、高耐熱性を有することが確認できた。
上記臭化アリルの代わりに、アクリル酸を用いたこと以外は合成実施例3-1と同様に反応させ、下記式(AcE-BiN-1)で表される目的化合物3.3gを得た。
400MHz-1H-NMRにより、下記式(AcE-BiN-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)7.2~7.8(19H,Ph-H)、6.7(1H,C-H)、5.8~6.4(6H,-CH-CH2)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)
熱分解温度は371℃、ガラス転移点は102℃、融点は221℃であり、高耐熱性を有することが確認できた。
2-ナフトールの代わりに、o-フェニルフェノールを使用したこと以外は合成例3と同様に反応させ、下記式(BiP-1)で表される目的化合物1.0gを得た。
得られた化合物(BiP-1)について、上述の方法により分子量を測定した結果、466であった。
得られた化合物(BiP-1)について、上述の測定条件で、NMR測定を行ったところ、以下のピークが見出され、下記式(BiP-1)の化学構造を有することを確認した。
δ(ppm)9.67(2H,O-H)、6.98~7.60(25H,Ph-H)、2.25(3H,C-H)
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に上記式(BiP-1)で表される化合物11.2g(21mmol)と炭酸カリウム14.8g(107mmol)とを50mlジメチルホルムアミドに仕込み、酢酸-2-クロロエチル6.56g(54mmol)を加えて、反応液を90℃で12時間撹拌して反応を行った。次に反応液を氷浴で冷却し結晶を析出させ、濾過を行って分離した。続いて攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に前記結晶40g、メタノール40g、THF100g及び24%水酸化ナトリウム水溶液を仕込み、反応液を還流下で4時間撹拌して反応を行った。その後、氷浴で冷却し、反応液を濃縮し析出した固形物を濾過し、乾燥させた後、カラムクロマトグラフによる分離精製を行い、下記式(E-BiP-1)で表される目的化合物5.9gを得た。
400MHz-1H-NMRにより、下記式(E-BiP-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)8.6(4H,O-H)、6.8~7.6(25H,Ph-H)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)、2.2(3H,C-H)
得られた化合物について、前記方法により分子量を測定した結果、606であった。
上記式(E-BiN-1)で表される化合物の代わりに、上記式(E-BiP-1)で表される化合物を用いたこと以外は合成実施例3-1と同様に反応させ、下記式(AlE-BiP-1)で表される目的化合物3.0gを得た。
400MHz-1H-NMRにより、下記式(AlE-BiP-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)6.8~7.8(25H,Ph-H)、6.1(4H,-CH-CH2)、5.4~5.5(4H,-CH-CH2)、4.7(4H,-O-CH2-)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)、2.2(3H,C-H)
熱分解温度は390℃、ガラス転移点は74℃、融点は202℃であり、高耐熱性を有することが確認できた。
上記式(E-XBisN-1)で表される化合物の代わりに、上記式(E-BiP-1)で表される化合物を用い、臭化アリルの代わりに、アクリル酸を用いたこと以外、合成実施例1-1と同様に反応させ、下記式(AcE-BiP-1)で表される目的化合物3.8gを得た。
400MHz-1H-NMRにより、下記式(AcE-BiP-1)の化学構造を有することを確認した。
1H-NMR:(d-DMSO、内部標準TMS)
δ(ppm)6.8~7.8(25H,Ph-H)、5.8~6.4(3H,-CH-CH2)、4.0(4H,-O-CH2-)、3.8(4H,-CH2-OH)、2.2(3H,C-H)、
熱分解温度は365℃、ガラス転移点は85℃、融点は220℃であり、高耐熱性を有することが確認できた。
合成例3の原料である2-ナフトール(原料1)及び4-アセチルビフェニル(原料2)を表1のように変更し、その他は合成例3と同様に行い、各目的化合物を得た。
各目的化合物は1H-NMRで同定した。
合成例3の原料である2-ナフトール(原料1)及び4-ビフェニルアルデヒド(原料2)を表3のように変更し、その他は合成例3と同様に行い、各目的化合物を得た。
各目的化合物は1H-NMRで同定した。
合成例3の原料である2-ナフトール(原料1)及び4-アセチルビフェニル(原料2)を表5のように変更し、水1.5mL、ドデシルメルカプタン73mg(0.35mmol)、37%塩酸2.3g(22mmol)を加え、反応温度を55℃に変更し、その他は合成例3と同様に行い、各目的化合物を得た。
各目的化合物は1H-NMRにより同定した。
合成例3Aの原料である前記式(BiN-1)で表される化合物を表7のように変更し、その他は合成例3Aと同様の条件にて合成を行い、目的化合物を得た。各目的化合物の構造は400MHz-1H-NMR(d-DMSO、内部標準TMS)およびLC-MSで分子量を確認することにより、同定した。
合成実施例3-1の原料である前記式(E-BiN-1)で表される化合物を表7のように変更し、その他は合成実施例3-1と同様の条件にて合成を行い、各目的物を得た。各化合物の構造は400MHz-1H-NMR(d-DMSO、内部標準TMS)およびLC-MSで分子量を確認することにより、同定した。
合成実施例3-2の原料である前記式(E-BiN-1)で表される化合物を表7のように変更し、その他は合成実施例3-2と同様の条件にて合成を行い、各目的物を得た。各化合物の構造は400MHz-1H-NMR(d-DMSO、内部標準TMS)およびLC-MSで分子量を確認することにより、同定した。
ジムロート冷却管、温度計及び攪拌翼を備えた、底抜きが可能な内容積1Lの四つ口フラスコを準備した。この四つ口フラスコに、窒素気流中、合成例1で得られた化合物(XBisN-1)を32.6g(70mmol、三菱ガス化学(株)製)、40質量%ホルマリン水溶液21.0g(ホルムアルデヒドとして280mmol、三菱ガス化学(株)製)及び98質量%硫酸(関東化学(株)製)0.97mLを仕込み、常圧下、100℃で還流させながら7時間反応させた。その後、希釈溶媒としてオルソキシレン(和光純薬工業(株)製試薬特級)180.0gを反応液に加え、静置後、下相の水相を除去した。さらに、中和及び水洗を行い、オルソキシレンを減圧下で留去することにより、褐色固体の樹脂(R1-XBisN-1)34.1gを得た。
ジムロート冷却管、温度計及び攪拌翼を備えた、底抜きが可能な内容積1Lの四つ口フラスコを準備した。この四つ口フラスコに、窒素気流中、合成例1で得られた化合物(XBisN-1)を32.6g(70mmol、三菱ガス化学(株)製)、4-ビフェニルアルデヒド50.9g(280mmol、三菱ガス化学(株)製)、アニソール(関東化学(株)製)100mL及びシュウ酸二水和物(関東化学(株)製)10mLを仕込み、常圧下、100℃で還流させながら7時間反応させた。その後、希釈溶媒としてオルソキシレン(和光純薬工業(株)製試薬特級)180.0gを反応液に加え、静置後、下相の水相を除去した。さらに、中和及び水洗を行い、有機相の溶媒および未反応の4-ビフェニルアルデヒドを減圧下で留去することにより、褐色固体の樹脂(R2-XBisN-2)34.7gを得た。
攪拌機、冷却管及びビュレットを備えた内容積500mlの容器に上述の樹脂(R1-XBisN-1)30gと炭酸カリウム29.6g(214mmol)とを100mlジメチルホルムアミドに仕込み、酢酸-2-クロロエチル13.12g(108mmol)を加えて、反応液を90℃で12時間撹拌して反応を行った。次に反応液を氷浴で冷却し結晶を析出させ、濾過を行って分離した。続いて攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に前記結晶40g、メタノール80g、THF100g及び24%水酸化ナトリウム水溶液を仕込み、反応液を還流下で4時間撹拌して反応を行った。その後、氷浴で冷却し、反応液を濃縮し析出した固形物を濾過し、乾燥させることにより、褐色固体の樹脂(E-R1-XBisN-1)26.5gを得た。
攪拌機、冷却管及びビュレットを備えた内容積500mlの容器に上記式(E-R1-XBisN-1)で表される化合物30.6gと炭酸カリウム12.4g(90mmol)とを200mlアセトンに加えた液を仕込み、さらに臭化アリル10.8(90mmol)gおよび10-クラウン-6を4.0g加えて、得られた反応液を還流下で9時間撹拌して反応を行なった。次に反応液から固形分をろ過で除去し、氷浴で冷却し、反応液を濃縮し固形物を析出させた。析出した固形物をろ過し、乾燥させることにより、灰色固体の(AlE-R1-XBisN-1)で表される樹脂46.2gを得た。
上記臭化アリルの代わりに、アクリル酸を用いたこと以外は合成実施例23-1と同様に反応させ、褐色固体の(AcE-R1-XBisN-1)で表される樹脂5.0gを得た。
攪拌機、冷却管及びビュレットを備えた内容積500mlの容器に上述の樹脂(R2-XBisN-1)30gと炭酸カリウム29.6g(214mmol)とを100mlジメチルホルムアミドに仕込み、酢酸-2-クロロエチル13.12g(108mmol)を加えて、反応液を90℃で12時間撹拌して反応を行った。次に反応液を氷浴で冷却し結晶を析出させ、濾過を行って分離した。続いて攪拌機、冷却管及びビュレットを備えた内容積100mlの容器に前記結晶40g、メタノール80g、THF100g及び24%水酸化ナトリウム水溶液を仕込み、反応液を還流下で4時間撹拌して反応を行った。その後、氷浴で冷却し、反応液を濃縮し析出した固形物を濾過し、乾燥させることにより、褐色固体の樹脂(E-R2-XBisN-1)22.3gを得た。
上記式(E-R1-XBisN-1)の代わりに、上記式(E-R2-XBisN-1)で表される化合物30.6gを使用した以外は合成実施例23-1と同様に反応させ、灰色固体の(AlE-R2-XBisN-1)で表される樹脂36.5gを得た。
上記臭化アリルの代わりに、アクリル酸を用いたこと以外は合成実施例24-1と同様に反応させ、褐色固体の(AcE-R2-XBisN-1)で表される樹脂5.0gを得た。
ジムロート冷却管、温度計及び攪拌翼を備えた、底抜きが可能な内容積10Lの四つ口フラスコを準備した。この四つ口フラスコに、窒素気流中、1,5-ジメチルナフタレン1.09kg(7mol、三菱ガス化学(株)製)、40質量%ホルマリン水溶液2.1kg(ホルムアルデヒドとして28mol、三菱ガス化学(株)製)及び98質量%硫酸(関東化学(株)製)0.97mlを仕込み、常圧下、100℃で還流させながら7時間反応させた。その後、希釈溶媒としてエチルベンゼン(和光純薬工業(株)製試薬特級)1.8kgを反応液に加え、静置後、下相の水相を除去した。さらに、中和及び水洗を行い、エチルベンゼン及び未反応の1,5-ジメチルナフタレンを減圧下で留去することにより、淡褐色固体のジメチルナフタレンホルムアルデヒド樹脂1.25kgを得た。
得られたジメチルナフタレンホルムアルデヒドの分子量は、Mn:562、であった。
得られた樹脂(CR-1)は、Mn:885、Mw:2220、Mw/Mn:4.17であった。
上記合成実施例1-1~24-2に記載の化合物あるいは樹脂、合成比較例1のCR-1を用いて溶解度試験を行った。結果を表8に示す。
また、表8に示す組成のリソグラフィー用下層膜形成材料を各々調製した。次に、これらのリソグラフィー用下層膜形成材料をシリコン基板上に回転塗布し、その後、240℃で60秒間、さらに400℃で120秒間ベークして、膜厚200nmの下層膜を各々作製した。酸発生剤、架橋剤及び有機溶媒については以下のものを用いた。
酸発生剤:みどり化学社製 ジターシャリーブチルジフェニルヨードニウムノナフルオロメタンスルホナート(DTDPI)
架橋剤:三和ケミカル社製 ニカラックMX270(ニカラック)
有機溶媒:プロピレングリコールモノメチルエーテルアセテートアセテート(PGMEA)
また、下記表9に示す組成のリソグラフィー用下層膜形成材料を各々調製した。次に、これらのリソグラフィー用下層膜形成材料をシリコン基板上に回転塗布し、その後、その後、110℃で60秒間ベークして塗膜の溶媒を除去した後、高圧水銀ランプにより、積算露光量600mJ/cm2、照射時間20秒で硬化させて膜厚200nmの下層膜を各々作製した。光ラジカル重合開始剤、架橋剤及び有機溶媒については次のものを用いた。
架橋剤:
(1)三和ケミカル社製 ニカラックMX270(ニカラック)
(2)三菱ガス化学製 ジアリルビスフェノールA型シアネート(DABPA-CN)
(3)小西化学工業製 ジアリルビスフェノールA(BPA-CA)
(4)小西化学工業製 ベンゾオキサジン(BF-BXZ)
(5)日本化薬製 ビフェニルアラルキル型エポキシ樹脂(NC-3000-L)
有機溶媒:プロピレングリコールモノメチルエーテルアセテートアセテート(PGMEA)
[エッチング試験]
エッチング装置:サムコインターナショナル社製 RIE-10NR
出力:50W
圧力:20Pa
時間:2min
エッチングガス
Arガス流量:CF4ガス流量:O2ガス流量=50:5:5(sccm)
[エッチング耐性の評価]
エッチング耐性の評価は、以下の手順で行った。
まず、化合物(AlE-XBisN-1)に代えてノボラック(群栄化学社製 PSM4357)を用いたこと以外は、実施例1と同様の条件で、ノボラックの下層膜を作製した。そして、このノボラックの下層膜を対象として、上記のエッチング試験を行い、そのときのエッチングレートを測定した。
次に、各実施例及び比較例1の下層膜を対象として、上記エッチング試験を同様に行い、そのときのエッチングレートを測定した。
そして、ノボラックの下層膜のエッチングレートを基準として、以下の評価基準でエッチング耐性を評価した。
[評価基準]
A:ノボラックの下層膜に比べてエッチングレートが-10%未満
B:ノボラックの下層膜に比べてエッチングレートが-10%~+5%
C:ノボラックの下層膜に比べてエッチングレートが+5%超
次に、AlE-XBisN-1、AcE-XBisN-1、AlE-BisF-1又はAcE-BisF-1を含むリソグラフィー用下層膜形成材料の各溶液を、膜厚300nmのSiO2基板上に塗布して、240℃で60秒間、さらに400℃で120秒間ベークすることにより、膜厚70nmの下層膜を形成した。この下層膜上に、ArF用レジスト溶液を塗布し、130℃で60秒間ベークすることにより、膜厚140nmのフォトレジスト層を形成した。なお、ArFレジスト溶液としては、下記式(11)の化合物:5質量部、トリフェニルスルホニウムノナフルオロメタンスルホナート:1質量部、トリブチルアミン:2質量部、及びPGMEA:92質量部を配合して調製したものを用いた。
式(11)の化合物は、2-メチル-2-メタクリロイルオキシアダマンタン4.15g、メタクリルロイルオキシ-γ-ブチロラクトン3.00g、3-ヒドロキシ-1-アダマンチルメタクリレート2.08g、アゾビスイソブチロニトリル0.38gを、テトラヒドロフラン80mLに溶解させて反応溶液とした。この反応溶液を、窒素雰囲気下、反応温度を63℃に保持して、22時間重合させた後、反応溶液を400mlのn-ヘキサン中に滴下した。このようにして得られた生成樹脂を凝固精製させ、生成した白色粉末をろ過し、減圧下40℃で一晩乾燥させて得た。
現像後のレジストパターンの形状については、パターン倒れがなく、矩形性が良好なものを「良好」とし、それ以外を「不良」として評価した。また、前記観察の結果、パターン倒れがなく、矩形性が良好な最小の線幅を「解像性」として、評価の指標とした。さらに、良好なパターン形状を描画可能な最小の電子線エネルギー量を「感度」として、評価の指標とした。
評価結果を表10に示す。
下層膜の形成を行わなかったこと以外は、実施例45と同様にして、フォトレジスト層をSiO2基板上に直接形成し、ポジ型のレジストパターンを得た。結果を表10に示す。
また、実施例45~48においては、現像後のレジストパターン形状が良好であり、欠陥も見られないことが確認された。下層膜の形成を省略した比較例2に比べて、解像性及び感度ともに有意に優れていることが確認された。
現像後のレジストパターン形状の相違から、実施例45~48において用いたリソグラフィー用下層膜形成材料は、レジスト材料との密着性が良いことが示された。
実施例1-1~2-2のリソグラフィー用下層膜形成材料の溶液を膜厚300nmのSiO2基板上に塗布して、240℃で60秒間、さらに400℃で120秒間ベークすることにより、膜厚80nmの下層膜を形成した。この下層膜上に、珪素含有中間層材料を塗布し、200℃で60秒間ベークすることにより、膜厚35nmの中間層膜を形成した。さらに、この中間層膜上に、前記ArF用レジスト溶液を塗布し、130℃で60秒間ベークすることにより、膜厚150nmのフォトレジスト層を形成した。なお、珪素含有中間層材料としては、特開2007-226170号公報<合成例1>に記載の珪素原子含有ポリマーを用いた。
次いで、電子線描画装置(エリオニクス社製;ELS-7500,50keV)を用いて、フォトレジスト層をマスク露光し、115℃で90秒間ベーク(PEB)し、2.38質量%テトラメチルアンモニウムヒドロキシド(TMAH)水溶液で60秒間現像することにより、55nmL/S(1:1)のポジ型のレジストパターンを得た。
その後、サムコインターナショナル社製 RIE-10NRを用いて、得られたレジストパターンをマスクにして珪素含有中間層膜(SOG)のドライエッチング加工を行い、続いて、得られた珪素含有中間層膜パターンをマスクにした下層膜のドライエッチング加工と、得られた下層膜パターンをマスクにしたSiO2膜のドライエッチング加工とを順次行った。
レジストパターンのレジスト中間層膜へのエッチング条件
出力:50W
圧力:20Pa
時間:1min
エッチングガス
Arガス流量:CF4ガス流量:O2ガス流量=50:8:2(sccm)
レジスト中間膜パターンのレジスト下層膜へのエッチング条件
出力:50W
圧力:20Pa
時間:2min
エッチングガス
Arガス流量:CF4ガス流量:O2ガス流量=50:5:5(sccm)
レジスト下層膜パターンのSiO 2 膜へのエッチング条件
出力:50W
圧力:20Pa
時間:2min
エッチングガス
Arガス流量:C5F12ガス流量:C2F6ガス流量:O2ガス流量
=50:4:3:1(sccm)
上記のようにして得られたパターン断面(エッチング後のSiO2膜の形状)を、(株)日立製作所製電子顕微鏡(S-4800)を用いて観察したところ、本実施形態の下層膜を用いた実施例は、多層レジスト加工におけるエッチング後のSiO2膜の形状は矩形であり、欠陥も認められず良好であることが確認された。
前記合成例、及び合成実施例で合成した各化合物を用いて、下記表11に示す配合で光学部品形成組成物を調製した。なお、表4中の光学部品形成組成物の各成分のうち、酸発生剤、架橋剤、酸拡散抑制剤、及び溶媒については、以下のものを用いた。
酸発生剤:みどり化学社製 ジターシャリーブチルジフェニルヨードニウムノナフルオロメタンスルホナート(DTDPI)
架橋剤:三和ケミカル社製 ニカラックMX270(ニカラック)
有機溶媒:プロピレングリコールモノメチルエーテルアセテートアセテート(PGMEA)
均一状態の光学部品形成組成物を清浄なシリコンウェハー上に回転塗布した後、110℃のオーブン中でプレベーク(prebake:PB)して、厚さ1μmの光学部品形成膜を形成した。調製した光学部品形成組成物について、膜形成が良好な場合には「A」、形成した膜に欠陥がある場合には「C」と評価した。
均一な光学部品形成組成物を清浄なシリコンウェハー上に回転塗布した後、110℃のオーブン中でPBして、厚さ1μmの膜を形成した。その膜につき、ジェー・エー・ウーラム製多入射角分光エリプソメーターVASEにて、25℃における屈折率(λ=589.3nm)を測定した。調製した膜について、屈折率が1.65以上の場合には「A」、1.6以上1.65未満の場合には「B」、1.6未満の場合には「C」と評価した。また透過率(λ=632.8nm)が90%以上の場合には「A」、90%未満の場合には「C」と評価した。
前記合成実施例で合成した各化合物を用いて、下記表12に示す配合でレジスト組成物を調製した。なお、表12中のレジスト組成物の各成分のうち、ラジカル発生剤、ラジカル拡散抑制剤、及び溶媒については、以下のものを用いた。
ラジカル発生剤:BASF社製 IRGACURE184
ラジカル拡散制御剤:BASF社製 IRGACURE1010
有機溶媒:プロピレングリコールモノメチルエーテルアセテートアセテート(PGMEA)
(1)レジスト組成物の保存安定性及び薄膜形成
レジスト組成物の保存安定性は、レジスト組成物を作成後、23℃、50%RHにて3日間静置し、析出の有無を目視にて観察することにより評価した。3日間静置後のレジスト組成物において、均一溶液であり析出がない場合にはA、析出がある場合はCと評価した。また、均一状態のレジスト組成物を清浄なシリコンウェハー上に回転塗布した後、110℃のオーブン中で露光前ベーク(PB)して、厚さ40nmのレジスト膜を形成した。作成したレジスト組成物について、薄膜形成が良好な場合にはA、形成した膜に欠陥がある場合にはCと評価した。
均一なレジスト組成物を清浄なシリコンウェハー上に回転塗布した後、110℃のオーブン中で露光前ベーク(PB)して、厚さ60nmのレジスト膜を形成した。得られたレジスト膜に対して、電子線描画装置(ELS-7500、(株)エリオニクス社製)を用いて、50nm、40nm及び30nm間隔の1:1のラインアンドスペース設定の電子線を照射した。当該照射後に、レジスト膜を、それぞれ所定の温度で、90秒間加熱し、PGMEに60秒間浸漬して現像を行った。その後、レジスト膜を、超純水で30秒間洗浄、乾燥して、ネガ型のレジストパターンを形成した。形成されたレジストパターンについて、ラインアンドスペースを走査型電子顕微鏡((株)日立ハイテクノロジー製S-4800)により観察し、レジスト組成物の電子線照射による反応性を評価した。
感度は、パターンを得るために必要な単位面積当たりの最小のエネルギー量で示し、以下に従って評価した。
A:50μC/cm2未満でパターンが得られた場合
C:50μC/cm2以上でパターンが得られた場合
パターン形成は、得られたパターン形状をSEM(走査型電子顕微鏡:Scanning Electron Microscope)にて観察し、以下に従って評価した。
A:矩形なパターンが得られた場合
B:ほぼ矩形なパターンが得られた場合
C:矩形でないパターンが得られた場合
また、湿式プロセスが適用可能であり、耐熱性及びエッチング耐性に優れるフォトレジスト下層膜を形成するために有用な化合物、樹脂及びリソグラフィー用膜形成組成物を実現することができる。そして、このリソグラフィー用膜形成組成物は、耐熱性が高く、溶媒溶解性も高い、特定構造を有する化合物又は樹脂を用いているため、高温ベーク時の膜の劣化が抑制され、酸素プラズマエッチング等に対するエッチング耐性にも優れたレジスト及び下層膜を形成することができる。さらには、下層膜を形成した場合、レジスト層との密着性にも優れるので、優れたレジストパターンを形成することができる。
さらには屈折率が高く、また低温~高温処理によって着色が抑制されることから、各種光学部品形成組成物としても有用である。
したがって、本発明は、例えば、電気用絶縁材料、レジスト用樹脂、半導体用封止樹脂、プリント配線板用接着剤、電気機器・電子機器・産業機器等に搭載される電気用積層板、電気機器・電子機器・産業機器等に搭載されるプリプレグのマトリックス樹脂、ビルドアップ積層板材料、繊維強化プラスチック用樹脂、液晶表示パネルの封止用樹脂、塗料、各種コーティング剤、接着剤、半導体用のコーティング剤、半導体用のレジスト用樹脂、下層膜形成用樹脂、フィルム状、シート状で使われる他、プラスチックレンズ(プリズムレンズ、レンチキュラーレンズ、マイクロレンズ、フレネルレンズ、視野角制御レンズ、コントラスト向上レンズ等)、位相差フィルム、電磁波シールド用フィルム、プリズム、光ファイバー、フレキシブルプリント配線用ソルダーレジスト、メッキレジスト、多層プリント配線板用層間絶縁膜、感光性光導波路等の光学部品等において、広く且つ有効に利用可能である。
Claims (28)
- 下記式(0)で表される、化合物。
RZは、炭素数1~60のN価の基又は単結合であり、
RTは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、RTの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
Xは、酸素原子、硫黄原子又は無架橋であることを示し、
mは、各々独立して0~9の整数であり、ここで、mの少なくとも1つは1~9の整数であり、
Nは、1~4の整数であり、ここで、Nが2以上の整数の場合、N個の[ ]内の構造式は同一であっても異なっていてもよく、
rは、各々独立して0~2の整数である。) - 前記式(0)で表される化合物が下記式(1)で表される化合物である、請求項1に記載の化合物。
R1は、炭素数1~60のn価の基又は単結合であり、
R2~R5は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
m2及びm3は、各々独立して、0~8の整数であり、
m4及びm5は、各々独立して、0~9の整数であり、
但し、m2、m3、m4及びm5は同時に0になることはなく、
nは前記Nと同義であり、ここで、nが2以上の整数の場合、n個の[ ]内の構造式は同一であっても異なっていてもよく、
p2~p5は、前記rと同義である。) - 前記式(0)で表される化合物が下記式(2)で表される化合物である、請求項1に記載の化合物。
R1Aは、炭素数1~60のnA価の基又は単結合であり、
R2Aは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2Aの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
nAは、前記Nと同義であり、ここで、nAが2以上の整数の場合、nA個の[ ]内の構造式は同一であっても異なっていてもよく、
XAは、酸素原子、硫黄原子又は無架橋であることを示し、
m2Aは、各々独立して、0~7の整数であり、但し、少なくとも1つのm2Aは1~7の整数であり、
qAは、各々独立して、0又は1である。) - 前記式(1)で表される化合物が下記式(1-1)で表される化合物である、請求項2に記載の化合物。
R6~R7は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、
R10~R11は、各々独立して、水素原子又はアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
ここで、R10~R11の少なくとも1つはアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
m6及びm7は、各々独立して、0~7の整数であり、
但し、m4、m5、m6及びm7は同時に0になることはない。) - 前記式(2)で表される化合物が下記式(2-1)で表される化合物である、請求項3に記載の化合物。
R3Aは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、
R4Aは、各々独立して、水素原子又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、ここで、R4Aの少なくとも1つはアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基であり、
m6Aは、各々独立して、0~5の整数である。) - 請求項1に記載の化合物をモノマーとして得られる樹脂。
- 下記式(3)で表される構造を有する、請求項7に記載の樹脂。
Lは、置換基を有していてもよい炭素数1~30のアルキレン基、置換基を有していてもよい炭素数6~30のアリーレン基、置換基を有していてもよい炭素数1~30のアルコキシレン基又は単結合であり、前記アルキレン基、前記アリーレン基、前記アルコキシレン基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、
R0は、前記RYと同義であり、
R1は、炭素数1~60のn価の基又は単結合であり、
R2~R5は、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
m2及びm3は、各々独立して、0~8の整数であり、
m4及びm5は、各々独立して、0~9の整数であり、
但し、m2、m3、m4及びm5は同時に0になることはなく、R2~R5の少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基である。) - 下記式(4)で表される構造を有する、請求項7に記載の樹脂。
R0Aは、前記RYと同義であり、
R1Aは、炭素数1~30のnA価の基又は単結合であり、
R2Aは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、R2Aの少なくとも1つは水酸基の水素原子がアリルオキシアルキル基、アクリルオキシアルキル基またはメタクリルオキシアルキル基から選ばれる1つの基で置換された基を含み、
nAは、前記Nと同義であり、ここで、nAが2以上の整数の場合、nA個の[ ]内の構造式は同一であっても異なっていてもよく、
XAは、酸素原子、硫黄原子又は無架橋であることを示し、
m2Aは、各々独立して、0~7の整数であり、但し、少なくとも1つのm2Aは1~7の整数であり、
qAは、各々独立して、0又は1である。) - 請求項1~6のいずれか1項に記載の化合物及び請求項7~9のいずれか1項に記載の樹脂からなる群より選ばれる1種以上を含有する、組成物。
- 溶媒をさらに含有する、請求項10に記載の組成物。
- 酸発生剤をさらに含有する、請求項10又は11に記載の組成物。
- 架橋剤をさらに含有する、請求項10~12のいずれか1項に記載の組成物。
- 前記架橋剤は、フェノール化合物、エポキシ化合物、シアネート化合物、アミノ化合物、ベンゾオキサジン化合物、メラミン化合物、グアナミン化合物、グリコールウリル化合物、ウレア化合物、イソシアネート化合物及びアジド化合物からなる群より選ばれる少なくとも1種である、請求項13に記載の組成物。
- 前記架橋剤は、少なくとも1つのアリル基を有する、請求項13又は14に記載の組成物。
- 前記架橋剤の含有割合が、請求項1~6のいずれか一項に記載の化合物及び請求項7~9のいずれか一項に記載の樹脂からなる群より選ばれる1種以上を含有する組成物の合計質量を100質量部とした場合に、0.1~100質量部である、請求項13~15のいずれか1項に記載の組成物。
- 架橋促進剤をさらに含有する、請求項13~16のいずれか1項に記載の組成物。
- 前記架橋促進剤は、アミン類、イミダゾール類、有機ホスフィン類、及びルイス酸からなる群より選ばれる少なくとも1種である、請求項17に記載の組成物。
- 前記架橋促進剤の含有割合が、請求項1~6のいずれか1項に記載の化合物及び請求項7~9のいずれか1項に記載の樹脂からなる群より選ばれる1種以上を含有する組成物の合計質量を100質量部とした場合に、0.1~5質量部である、請求項17又は18に記載の組成物。
- ラジカル重合開始剤をさらに含有する、請求項10~19のいずれか1項に記載の組成物。
- 前記ラジカル重合開始剤は、ケトン系光重合開始剤、有機過酸化物系重合開始剤及びアゾ系重合開始剤からなる群より選ばれる少なくとも1種である、請求項20に記載の組成物。
- 前記ラジカル重合開始剤の含有割合が、請求項1~6のいずれか1項に記載の化合物及び請求項7~9のいずれか1項に記載の樹脂からなる群より選ばれる1種以上を含有する組成物の合計質量を100質量部とした場合に、0.05~25質量部である、請求項20又は21に記載の組成物。
- リソグラフィー用膜形成に用いられる、請求項10~22のいずれか1項に記載の組成物。
- レジスト永久膜形成に用いられる、請求項10~22のいずれか1項に記載の組成物。
- 光学部品形成に用いられる、請求項10~22のいずれか1項に記載の組成物。
- 請求項23に記載の組成物を用いて基板上にフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像を行う工程を含む、レジストパターン形成方法。
- 請求項23に記載の組成物を用いて基板上に下層膜を形成し、前記下層膜上に、少なくとも1層のフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像を行う工程を含む、レジストパターン形成方法。
- 請求項23に記載の組成物を用いて基板上に下層膜を形成し、前記下層膜上にレジスト中間層膜材料を用いて中間層膜を形成し、前記中間層膜上に、少なくとも1層のフォトレジスト層を形成する工程、
前記フォトレジスト層の所定の領域に放射線を照射し、現像してレジストパターンを形成する工程、
前記レジストパターンをマスクとして前記中間層膜をエッチングし、得られた中間層膜パターンをエッチングマスクとして前記下層膜をエッチングし、得られた下層膜パターンをエッチングマスクとして基板をエッチングすることにより基板にパターンを形成する工程、
を含む、回路パターン形成方法。
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WO2020004316A1 (ja) | 2018-06-26 | 2020-01-02 | 三菱瓦斯化学株式会社 | リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法 |
JPWO2020027206A1 (ja) * | 2018-07-31 | 2021-08-12 | 三菱瓦斯化学株式会社 | 光学部品形成用組成物及び光学部品、並びに、化合物及び樹脂 |
WO2020027206A1 (ja) | 2018-07-31 | 2020-02-06 | 三菱瓦斯化学株式会社 | 光学部品形成用組成物及び光学部品、並びに、化合物及び樹脂 |
WO2020026879A1 (ja) | 2018-07-31 | 2020-02-06 | 三菱瓦斯化学株式会社 | 下層膜形成組成物 |
WO2020039966A1 (ja) | 2018-08-20 | 2020-02-27 | 三菱瓦斯化学株式会社 | リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法 |
US20230067259A1 (en) * | 2021-08-02 | 2023-03-02 | Shin-Etsu Chemical Co., Ltd. | Heat-curable resin composition |
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CN109415286A (zh) | 2019-03-01 |
KR20190034213A (ko) | 2019-04-01 |
TW201817722A (zh) | 2018-05-16 |
JPWO2018016614A1 (ja) | 2019-05-09 |
JP7194355B2 (ja) | 2022-12-22 |
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