WO2017173875A1 - 一种线性蒸发源、蒸发源系统及蒸镀装置 - Google Patents

一种线性蒸发源、蒸发源系统及蒸镀装置 Download PDF

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Publication number
WO2017173875A1
WO2017173875A1 PCT/CN2017/071044 CN2017071044W WO2017173875A1 WO 2017173875 A1 WO2017173875 A1 WO 2017173875A1 CN 2017071044 W CN2017071044 W CN 2017071044W WO 2017173875 A1 WO2017173875 A1 WO 2017173875A1
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Prior art keywords
linear
evaporation source
evaporation
nozzle
heating
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PCT/CN2017/071044
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English (en)
French (fr)
Inventor
张金中
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to EP17757655.0A priority Critical patent/EP3444373A4/en
Priority to US15/554,508 priority patent/US20180163292A1/en
Publication of WO2017173875A1 publication Critical patent/WO2017173875A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Definitions

  • the present application relates to the technical field of display setting manufacturing, and more particularly to a linear evaporation source, an evaporation source system, and an evaporation device.
  • the organic electroluminescent display is a current-type semiconductor light-emitting device based on an organic electroluminescent material, which mainly relies on a metal electrode to apply a certain voltage to the light-emitting layer, so that the organic electroluminescent material in the light-emitting layer emits light, thereby realizing image response. It has attracted wide attention due to its low power consumption, high contrast ratio, high color gamut, and the advantages of flexible display.
  • an organic electroluminescent material is generally vapor-deposited onto a target substrate by a linear evaporation source evaporation process to produce a light-emitting layer therein, but the obtained light-emitting layer is at an evaporation source.
  • the film thickness in the linear arrangement direction is not uniform, so that the display effect of the produced organic electroluminescence display is relatively poor.
  • the purpose of the present application is to provide a linear evaporation source, an evaporation source system, and an evaporation device to improve the linear arrangement direction of the light-emitting layer in the evaporation source when the light-emitting layer of the organic electroluminescent display is fabricated by a linear evaporation source evaporation process. Uniformity of film thickness on top.
  • the present application provides a linear evaporation source including a heating device for evaporating an evaporation material, the nozzle mounting surface of the heating device being provided with a linear nozzle group, the linear nozzle group A plurality of nozzles provided on the nozzle mounting surface along a linear arrangement direction of the evaporation source are provided; and the heating device is provided with a temperature compensating plate capable of making the heating temperature of the heating device uniform.
  • the heating portion of the heating device is located in a temperature compensating plate, and a portion of the temperature compensating plate corresponding to a position of the heating portion having a higher heating temperature is thinner, the temperature compensation The portion of the plate corresponding to the position of the heating portion having a lower heating temperature is thicker.
  • the temperature compensating plate has a split structure or a unitary structure.
  • the temperature compensation plate includes a plurality of temperature compensation units arranged along a linear arrangement direction of the evaporation source.
  • the aperture of the nozzle in the linear nozzle group gradually increases or decreases in a direction from the center of the linear nozzle group to both sides of the linear nozzle group.
  • the present application also provides an evaporation source system comprising at least two linear evaporation sources as described in the above prior art, each of which is linearly arranged along the evaporation source.
  • the nozzle mounting surface is provided with two baffles capable of adjusting a vapor deposition region of the linear evaporation source, and the linear nozzle group is located at two places. Between the baffles.
  • each of the linear evaporation sources two of the baffles have a height difference capable of adjusting an evaporation zone; the height of the baffle means that the baffle extends out of the nozzle to be installed The length of the face.
  • each of the linear evaporation sources has an evaporation angle of 40°-55° or 70°-90°.
  • the present application also provides an evaporation apparatus comprising the linear evaporation source described in the above technical solution or the evaporation source system described in the above technical solution.
  • the linear evaporation source provided by the present application has the following beneficial effects:
  • the heating device is provided with a temperature compensating plate, and the temperature compensating plate can make the heating temperature of the heating device more uniform, the evaporating speed of the evaporating material when the heating device heats the evaporating material It will be more consistent.
  • the film thickness of the vapor deposition film formed tends to be uniform; and the plurality of nozzles are along the evaporation source.
  • the linear arrangement direction is provided on the nozzle mounting surface, and when the vapor deposition gas ejected from each nozzle is vapor-deposited to the target substrate, the film thickness of the deposited vapor deposition film is more uniform. Therefore, when the vapor deposition material is vapor-deposited to the target substrate using the linear evaporation source, the obtained vapor deposition film has a uniform film thickness uniformity in the linear arrangement direction of the evaporation source.
  • the organic electroluminescent material is a specific vapor deposition material. Therefore, when the evaporation material is an organic electroluminescent material, the organic electroluminescent material can be evaporated by using the linear evaporation source provided by the present application to improve the organic electroluminescence.
  • the film thickness uniformity of the light-emitting layer formed on the target substrate in the linear arrangement direction of the evaporation source is provided on the linear arrangement direction of the evaporation source.
  • FIG. 1 is a schematic structural view of a linear evaporation source according to an embodiment of the present application
  • FIG. 2 is a test chart of film thickness uniformity of a vapor-deposited film of a heating portion before temperature compensation and temperature compensation in an embodiment of the present application;
  • FIG. 3 is a test chart of film thickness uniformity of a vapor deposition film before a nozzle aperture change and a nozzle aperture change are provided in an embodiment of the present application;
  • FIG. 4 is a schematic structural view of a two-component linear evaporation source in the prior art
  • FIG. 5 is a schematic structural diagram of an evaporation source system according to an embodiment of the present application.
  • FIG. 6 is a test diagram of the mixing uniformity of a two-component vapor-deposited film in an evaporation source system according to an embodiment of the present invention, when the vapor deposition angles of the respective linear evaporation sources are both 70°-90°;
  • FIG. 7 is a test diagram of the mixing uniformity of a two-component vapor-deposited film in an evaporation source system according to an embodiment of the present invention, when the vapor deposition angle of each linear evaporation source is 40°-55°;
  • FIG. 8 is a test diagram of the mixing uniformity of the vapor deposited film in the evaporation source system according to the embodiment of the present application, in which the nozzle aperture of each linear evaporation source is increased and the nozzle mounting angle is decreased.
  • a linear evaporation source provided by an embodiment of the present application includes a heating device 1 for evaporating an evaporation material.
  • a nozzle mounting surface of the heating device 1 is provided with a linear nozzle group 2, and the linear nozzle group 2 includes the evaporation source.
  • the linear arrangement direction is provided in a plurality of nozzles 20 on the nozzle mounting surface; and the heating device 1 is provided with a temperature compensating plate 3 capable of making the heating temperature of the heating device 1 uniform.
  • the linear arrangement direction of the evaporation source may also be referred to as the arrangement direction of the nozzle group 2.
  • the vapor deposition material is added to the heating device, the heating device is turned on, and the temperature compensating plate 3 is controlled to temperature-compensate the heating device 1 so that the heating temperature of the heating device 1 is uniform, thereby heating the evaporation material to steam
  • the evaporation rate of the plating material is uniform, and when the vapor deposition gas formed by evaporation of the vapor deposition material is ejected from each nozzle and vapor-deposited to the target substrate, the film thickness uniformity of the deposited vapor deposition film is improved.
  • the temperature compensation plate 3 is provided in the heating device 1, and the temperature compensation plate 3 can make the heating temperature of the heating device 1 uniform, so that the heating device 1 is heated and evaporated.
  • the evaporation rate of the vapor deposition material is uniform, so that the vapor deposition gas formed after evaporation of the vapor deposition material is ejected from each nozzle 20, and when vapor-deposited onto the target base substrate, the film thickness of the vapor deposition film formed is
  • the plurality of nozzles 20 are arranged on the nozzle mounting surface along the linear arrangement direction of the evaporation source, and the vapor deposition film formed when the vapor deposition gas ejected from each nozzle 20 is evaporated onto the target substrate. The film thickness tends to be uniform.
  • the film thickness of the deposited film is uniform in the linear arrangement direction of the evaporation source.
  • the organic electroluminescent material is a specific vapor deposition material. Therefore, when the evaporation material is an organic electroluminescent material, the linear evaporation source provided by the embodiment of the present application can be used to vaporize the organic material. Electroluminescent materials, to improve the uniformity of the film thickness of the organic electroluminescent light-emitting layer material is formed on a target substrate in a linear arrangement direction of the evaporation source.
  • the heating portion 10 of the heating device 1 may have a plurality of heating positions due to various factors, each of which has a different heating temperature. These heating positions cause a temperature gradient in which the temperature gradually decreases in the heating portion, so that when the heating portion 10 heats the vapor deposition material, the evaporation rate of the heated vapor deposition material corresponding to different heating positions of the heating portion 10 is different, thereby causing evaporation.
  • the thickness of the vapor deposited film formed on the vapor deposition material on the target substrate is not uniform.
  • the temperature compensating plate 3 corresponds to a plurality of heating positions.
  • the thickness of the various parts is different. That is, the thickness of the portion of the temperature compensating plate 3 corresponding to the heating position at which the heating temperature is high is thin, and the portion of the temperature compensating plate 3 corresponding to the heating position at which the heating temperature is low is thick.
  • the heating portion 10 of the heating device 1 is insulated by the thick temperature compensating plate 3 at a lower temperature position, thereby reducing the loss of heat in the heating portion, thereby making the temperature distribution of the heating portion 10 more uniform, and ensuring evaporation in the heating device 1.
  • the evaporation rate of the material is consistent.
  • the heating device 1 in the above embodiment can be commonly used, Other achievable devices are available; the heating portion 10 is typically a heating wire, but other achievable means are not excluded.
  • the temperature of the heating portion 10 generally varies in a gradient along the above-described linear arrangement direction, so that in the prior art, this may result in an evaporation film.
  • the thickness along the above linear arrangement direction changes in a gradient. Therefore, in order to improve the temperature distribution of the heating portion, the temperature compensating plates 3 may be arranged along the above-described linear arrangement direction such that the temperature distribution of the heating portion 1 in the linear arrangement direction is more uniform. Referring to Fig. 2, it has been experimentally proved that when the temperature gradient occurs in the linear arrangement direction of the heating portion 10, the film thickness of the formed vapor deposition film in the linear arrangement direction is relatively more uniform after temperature compensation by the temperature compensating plate 3.
  • the temperature compensating plate 3 in the above embodiment includes a plurality of temperature compensating units 30 which are arranged in a linear arrangement direction.
  • the temperature compensating plate 3 may have a one-piece structure or a split structure.
  • the plurality of temperature compensating units 30 of the temperature compensating plate 3 are of a unitary structure, and when the temperature compensating plate 3 is of a split type, a plurality of temperature compensating units 30 are combined, and each temperature compensating unit
  • the temperature compensation of the different heating positions of the heating unit 10 can be independently performed, so that the temperature compensation of each position of the heating unit 10 can be accurately performed, and the temperature compensation efficiency can be improved.
  • the temperature compensation plate 3 whether of the integral type or the split type, can temperature-compensate the heating portion 1 by adjusting the thickness of the temperature compensation unit.
  • the temperature compensating plate 3 is processed by an integral molding technique, and it is required to have different heating according to the heating portion 1 during processing.
  • the position of the temperature is used to process the thickness of the portion of the temperature compensating plate 3 corresponding to each heating temperature, so that the processing of the temperature compensating plate 3 is complicated.
  • the split type temperature compensating plate is composed of a plurality of temperature compensating units. When processing, each temperature compensating unit is processed first, and then each temperature compensating unit is combined.
  • each temperature compensating unit 30 can independently temperature compensate different heating positions of the heating portion 10, and each heating position area is relatively small, even if a temperature gradient occurs, it is within an acceptable range. Therefore, when processing a temperature compensation unit, it is not necessary to control the thickness of each part of the temperature compensation unit, and it is only necessary to adjust the overall thickness of the temperature compensation unit corresponding thereto according to the heating temperature of different heating positions.
  • the split compensation plate can not only improve the temperature compensation efficiency of the heating portion but also reduce the temperature compensation plate 3 with respect to the integrated temperature compensation plate.
  • the processing difficulty of each temperature compensation unit is not only improve the temperature compensation efficiency of the heating portion but also reduce the temperature compensation plate 3 with respect to the integrated temperature compensation plate.
  • the discharge pressure of the vapor deposition gas formed by evaporation of the vapor deposition material from each nozzle is different, and the film thickness distribution of the vapor deposition film is U-shaped.
  • the discharge pressure of the vapor deposition gas can be made the same by adjusting the diameter of each nozzle.
  • the internal pressure of the heating device 1 can be changed by adjusting the aperture of the nozzle 20 such that the higher air pressure at certain locations in the heating device 1 is reduced by the nozzle 20 of the larger aperture, at certain locations in the heating device 1. The lower air pressure is increased by the nozzle 20 of smaller aperture.
  • the film thickness distribution of the vapor-deposited film has an inverted U-shaped structure, that is, the thickness of the vapor-deposited film in the middle portion in the above-described linear arrangement direction is relatively thick, and the thicknesses on both sides are relatively thin.
  • the aperture of the nozzle 20 in the linear nozzle group 2 is gradually increased in the direction from the center of the linear nozzle group 2 to both sides of the linear nozzle group 2. Referring to Fig. 3, it has been experimentally confirmed that the larger the diameter of the nozzle 20 in the linear nozzle group 2, the thicker the thickness of the corresponding vapor-deposited film portion. Therefore, with the linear nozzle group 2 according to the embodiment of the present application, the film thickness uniformity of the vapor deposited film can be improved.
  • the film thickness distribution has a positive U-shaped structure, that is, the thickness of the vapor-deposited film in the middle portion of the linear arrangement direction is relatively thin and the thicknesses on both sides are relatively thick; in another embodiment of the present application, at the center of the linear nozzle group 2 In the direction to both sides of the linear nozzle group 2, the diameter of the nozzle 20 in the linear nozzle group 2 is gradually reduced to make the thickness of the vapor deposition film more uniform.
  • An embodiment of the present application further provides an evaporation source system comprising at least two linear evaporation sources as described in the above technical solution, each linear evaporation source being arranged along a linear arrangement direction of the linear evaporation source.
  • the beneficial effects of the evaporation source system provided by the present embodiment are the same as those of the linear evaporation source provided by the above technical solution, and are not described herein.
  • the evaporation source system provided by the above embodiment includes at least two linear evaporation sources, if the vapor deposition film contains a plurality of vapor deposition materials, different vapor deposition materials may be added to each linear evaporation source, and these vapor deposition materials may be added. The material can be evaporated onto the same target substrate. However, since the vapor deposition materials added by each linear evaporation source are different, the vapor deposition angle of each linear evaporation source must be considered at this time, otherwise the formed vapor deposition film is prone to delamination, resulting in poor uniformity of the vapor deposition film.
  • FIG. 4 discloses an evaporation source system including a first linear evaporation source 100 and a second linear evaporation source 200. But due to the first linear evaporation source 100 and the second linear evaporation source In the problem of the vapor deposition angle of 200, the vapor deposition materials 4 are formed by directly depositing the respective vapor deposition materials by the first linear evaporation source 100 and the second linear evaporation source 200, and then a vapor deposition film 4 composed of two materials is formed on the target substrate. It can also be called a two-component vapor deposition film.
  • the vapor deposition regions of the respective linear evaporation sources are coincident; therefore, even if the vapor deposition materials in the respective linear evaporation sources are different, the evaporation materials deposited by each linear evaporation source are The distribution areas on the target substrate are also coincident.
  • each vapor deposition material can be sufficiently mixed in the same region, and if these vapor deposition materials are different kinds of organic electroluminescent materials, in the process of fabricating the light-emitting layer The mixing uniformity of each organic electroluminescent material in the light-emitting layer can be ensured.
  • two baffles capable of adjusting the evaporation region of the linear evaporation source may be disposed on the nozzle mounting surface.
  • the linear nozzle group is located between the two baffles; and the baffle adjusts the evaporation region of the linear evaporation source by adjusting the difference in height between the evaporation zones by the two baffles.
  • the height of the baffle may be defined as the length of the baffle extending beyond the nozzle mounting surface.
  • the evaporation angle of the linear evaporation source is sufficient to cover the target substrate, that is, the evaporation region. Therefore, by adjusting the difference between the heights of the two baffles in the two linear evaporation sources, the evaporation angle of each evaporation source can be adjusted so that the evaporation angle of each linear evaporation source covers the same evaporation region.
  • the target substrate When the target substrate is located in the vapor deposition zone, it is ensured that the vapor deposition gas evaporated by each linear evaporation source is sufficiently mixed on the target substrate to form a vapor deposition film which is uniformly mixed.
  • the vapor deposition angle selection of the linear evaporation source can be carried out according to the actual situation as long as the vapor deposition regions of the respective linear evaporation sources can be overlapped. Further, in an example, the angle between the baffle and the nozzle mounting surface is 90°.
  • the evaporation source system includes a first linear evaporation source 100 and a second linear evaporation source 200.
  • the first left side baffle 101 and the first right side baffle 102 are disposed on the linear vapor deposition surface of the first linear evaporation source 100, and the height of the first left side baffle 101 is greater than the first right side baffle. 102.
  • the second left baffle 201 and the second right baffle 202 are disposed on the linear vapor deposition surface of the second linear evaporation source 200, and the height of the second right baffle 202 is greater than the second left baffle 201.
  • a first evaporation material is added to the first linear evaporation source 100, and a second evaporation material is added to the second linear evaporation source 200.
  • the heights of the second right side baffle 202 and the second left side baffle 201 are such that the vapor deposition area of the second linear evaporation source 200 covers the target substrate.
  • the first evaporation material is evaporated by the first linear evaporation source 100, and the second linear evaporation source 200 is evaporated.
  • the second material is such that the first vapor deposition material and the second vapor deposition material are mixed on the target substrate to form the two-component vapor deposition film 4.
  • the mixing uniformity of the two-component vapor deposition film 4 is further improved.
  • the mixing uniformity of the formed two-component vapor deposited film 4 is about 70%.
  • first linear evaporation source 100 in the above embodiment may utilize the height difference between the first left side baffle 101 and the first right side baffle 102
  • the evaporation angle of the first linear evaporation source 100 is adjusted
  • the second linear evaporation source 200 can adjust the vapor deposition angle of the second linear evaporation source 200 by using the difference in height between the second right side baffle 102 and the first left side baffle 101, but it is still impossible to deposit the two-component vapor deposition film 4
  • the mix uniformity is increased to 100%. This is because the ejection rate of the vapor deposition material in various directions after coming out of the nozzle is different, and the nozzle has a function of guiding the gas flow.
  • the vapor deposition rate Vc along the axial direction of the nozzle is the highest, and the vapor deposition rate Vs toward both sides of the nozzle is gradually lowered, which causes the vapor deposition material to be vapor-deposited to the target substrate in different directions, and the vapor deposition amount is the nozzle axis.
  • the direction is reduced from the center to the sides. Therefore, the mixing uniformity of the two-component vapor-deposited film 4 can be improved by reducing the nozzle mounting angle formed by the axis of each nozzle and the corresponding linear mounting surface, and increasing the nozzle aperture. Referring to Fig. 8, it has been experimentally proved that the mixing of the two-component vapor-deposited film 4 is uniform by such adjustment. Sexuality increased to more than 85%.
  • the nozzle mounting angle of the first linear evaporation source 100 in the above embodiment may be matched with the nozzle mounting angle of the second linear evaporation source 200 such that the first linear evaporation source 100 and the second linear evaporation source 200 mutually compensate each other.
  • the embodiment of the present application further provides an evaporation device, including the linear evaporation source provided by the above technical solution or the evaporation source system provided by the above technical solution.
  • the vapor deposition device provided in this embodiment has the same beneficial effects as the linear evaporation source provided by the above technical solution or the evaporation source system provided by the above technical solution, and details are not described herein.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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Abstract

一种线性蒸发源、蒸发源系统及蒸镀装置。线性蒸发源包括用于蒸发蒸镀材料的加热装置（1），加热装置（1）的喷嘴安装面上设有线性喷嘴组（2），线性喷嘴组（2）包括沿蒸发源的线性布置方向设在喷嘴安装面的多个喷嘴（20）；加热装置（1）中设有能够使加热装置（1）的加热温度均一的温度补偿板（3）。

Description

一种线性蒸发源、蒸发源系统及蒸镀装置 技术领域
本申请涉及显示设置制造的技术领域，尤其涉及一种线性蒸发源、蒸发源系统及蒸镀装置。
背景技术
有机电致发光显示器是一种基于有机电致发光材料的电流型半导体发光器件，其主要依靠金属电极向发光层施加一定的电压，使发光层中的有机电致发光材料发光，从而实现图像响应；它以低功耗、高对比度、高色域、以及可以实现柔性显示的优点受到人们的广泛关注。
目前，人们在制作有机电致发光显示器时，一般利用线性蒸发源蒸镀工艺将有机电致发光材料蒸镀到目标基板上，以制作其中的发光层，但是制得的发光层在蒸发源的线性布置方向上的膜厚不均匀，使得制成的有机电致发光显示器的显示效果比较差。
发明内容
本申请的目的在于提供一种线性蒸发源、蒸发源系统及蒸镀装置，以在采用线性蒸发源蒸镀工艺制作有机电致发光显示器的发光层时，提高发光层在蒸发源的线性布置方向上的膜厚的均一性。
为了实现上述目的，在一方面，本申请提供一种线性蒸发源，其包括用于蒸发蒸镀材料的加热装置，所述加热装置的喷嘴安装面上设有线性喷嘴组，所述线性喷嘴组包括沿所述蒸发源的线性布置方向设在喷嘴安装面上的多个喷嘴；所述加热装置中设有能够使所述加热装置的加热温度均一的温度补偿板。
在可选实施例中，所述加热装置的加热部位于温度补偿板内，所述温度补偿板与所述加热部中具有较高加热温度的位置对应的部分的厚度较薄，所述温度补偿板与所述加热部中具有较低加热温度的位置对应的部分的厚度较厚。
在可选实施例中，所述温度补偿板具有分体式结构或一体式结构。
在可选实施例中，所述温度补偿板包括多个温度补偿单元，多个温度补偿单元沿着所述蒸发源的线性布置方向排列。
在可选实施例中，在从所述线性喷嘴组的中心向所述线性喷嘴组的两侧的方向上，所述线性喷嘴组中喷嘴的孔径逐渐增大或减小。
本申请还提供了一种蒸发源系统，包括至少两个上述技术方案所述的线性蒸发源，各所述线性蒸发源沿所述蒸发源的线性布置方向。
在可选实施例中，每个所述线性蒸发源中，所述喷嘴安装面上设有两个能够调整所述线性蒸发源的蒸镀区域的挡板，所述线性喷嘴组位于两个所述挡板之间。
在可选实施例中，每个所述线性蒸发源中，两个所述挡板具有能够调节蒸镀区域的高度差；所述挡板的高度是指所述挡板伸出所述喷嘴安装面的长度。
在可选实施例中，所述线性蒸发源的数目为两个时，各所述线性蒸发源的蒸镀角均为40°-55°或70°-90°。
本申请还提供了一种蒸镀装置，包括上述技术方案所述的线性蒸发源或上述技术方案所述的蒸发源系统。
与现有技术相比，本申请提供的线性蒸发源具有以下有益效果：
在本申请提供的线性蒸发源中，由于加热装置中设有温度补偿板，且温度补偿板能够使得加热装置的加热温度更加均一，这样加热装置在加热蒸镀材料时，蒸镀材料的蒸发速度就会更加一致。这使得蒸镀材料蒸发后形成的蒸镀气体从每个喷嘴喷出后，蒸镀到目标底基板时，所形成的蒸镀膜的膜厚就会趋向一致；而多个喷嘴沿着蒸发源的线性布置方向设在喷嘴安装面上，且由于每个喷嘴喷出的蒸镀气体蒸镀到目标基板时，所形成的蒸镀膜的膜厚更加一致。因此，当使用该线性蒸发源将蒸镀材料蒸镀到目标基板时，制得的蒸镀膜在所述蒸发源的线性布置方向上的膜厚均一性比较好。而有机电致发光材料是一种具体的蒸镀材料，所以，当蒸镀材料为有机电致发光材料时，可以利用本申请提供的线性蒸发源蒸镀有机电致发光材料，提高有机电致发光材料在目标基板上形成的发光层在所述蒸发源的线性布置方向上的膜厚均一性。
附图说明
此处所说明的附图被提供用来对本申请的进一步理解，并且构成本申请的一部分。本申请的示意性实施例及其说明用于解释本申请， 并不构成对本申请的保护范围的不当限定。在附图中：
图1为本申请实施例提供的线性蒸发源的结构示意图；
图2为本申请实施例中的加热部在温度补偿前和温度补偿后的蒸镀膜的膜厚均一性测试图；
图3为本申请实施例提供中的喷嘴孔径改变前和喷嘴孔径改变后，蒸镀膜的膜厚均一性测试图；
图4为现有技术中双成分线性蒸发源的结构示意图；
图5为本申请实施例提供的蒸发源系统的结构示意图；
图6为本申请实施例提供的蒸发源系统中，在各线性蒸发源的蒸镀角均为70°-90°时，双成分蒸镀膜的混合均一性测试图；
图7为本申请实施例提供的蒸发源系统中，在各线性蒸发源的蒸镀角均为40°-55°时，双成分蒸镀膜的混合均一性测试图；
图8为本申请实施例提供的蒸发源系统中，在各线性蒸发源的喷嘴孔径增大，喷嘴安装角度减小后，蒸镀膜的混合均一性测试图。
附图标记：
1-加热装置，          10-加热部；
2-线性喷嘴组，        20-喷嘴；
3-温度补偿板，        30-温度补偿单元；
4-双成分蒸镀膜，      41-第一材料层；
                      42-第二材料层；
100-第一线性蒸发源，  101-第一左侧挡板；
102-第一右侧挡板，    200-第二线性蒸发源；
201-第二左侧挡板，    202-第二右侧挡板。
具体实施方式
为了进一步说明本申请实施例提供的一种线性蒸发源、蒸发源系统及蒸镀装置，下面结合说明书附图进行详细描述。
参阅图1，本申请实施例提供的线性蒸发源包括用于蒸发蒸镀材料的加热装置1，加热装置1的喷嘴安装面上设有线性喷嘴组2，线性喷嘴组2包括沿所述蒸发源的线性布置方向设在喷嘴安装面上的多个喷嘴20；加热装置1中设有能够使加热装置1的加热温度均一的温度补偿板3。所述蒸发源的线性布置方向也可被称为喷嘴组2的布置方向。
具体实施时，将蒸镀材料加入加热装置中，打开加热装置，并且控制温度补偿板3，以对加热装置1进行温度补偿，使得加热装置1的加热温度均一，从而加热蒸镀材料，使蒸镀材料的蒸发速度一致，蒸镀材料蒸发后形成的蒸镀气体从每个喷嘴喷出后，蒸镀到目标基板时，提高了所形成的蒸镀膜的膜厚均一性。
通过上述实施例提供的线性蒸发源的具体实施过程可知，由于加热装置1中设有温度补偿板3，且温度补偿板3能够使得加热装置1的加热温度均一，这样加热装置1在加热蒸镀材料时，蒸镀材料的蒸发速度就会一致，使得蒸镀材料蒸发后形成的蒸镀气体从每个喷嘴20喷出后，蒸镀到目标底基板时，所形成的蒸镀膜的膜厚就会趋向一致；而多个喷嘴20沿着所述蒸发源的线性布置方向设在喷嘴安装面上，且由于每个喷嘴20喷出的蒸镀气体蒸镀到目标基板时，所形成的蒸镀膜的膜厚趋向一致，因此，当使用该线性蒸发源将蒸镀材料蒸镀到目标基板时，制得的蒸镀膜的膜厚在所述蒸发源的线性布置方向上的膜厚均一性比较好；而有机电致发光材料是一种具体的蒸镀材料，所以，当蒸镀材料为有机电致发光材料时，可以利用本申请实施例提供的线性蒸发源蒸镀有机电致发光材料，提高有机电致发光材料在目标基板上形成的发光层在所述蒸发源的线性布置方向上的膜厚均一性。
加热装置1的加热部10因为各种因素，可能具有多个加热位置，该多个加热位置分别具有不同的加热温度。这些加热位置使得加热部出现温度逐渐降低的温度梯度，导致加热部10在加热蒸镀材料时，加热部10的不同加热位置所对应的加热的蒸镀材料的蒸发速度不一样，从而使蒸镀到目标基板上的蒸镀材料所形成的蒸镀膜的膜厚不均匀。继续参阅图1，为了防止这样的问题发生，通过将加热装置1的加热部10限定于温度补偿板3内，且根据多个加热位置的不同加热温度，温度补偿板3与多个加热位置对应的多个部分的厚度不同。即温度补偿板3与加热温度高的加热位置对应的部分的厚度较薄，温度补偿板3与加热温度低的加热位置对应的部分的厚度较厚。这样加热装置1的加热部10在温度较低的位置通过较厚的温度补偿板3保温，减少加热部热量的流失，从而使加热部10的温度分布更加均匀，保证了加热装置1中蒸镀材料的蒸发速度一致。
需要说明的是，上述实施例中的加热装置1可以常见的坩埚，也 可以为其它可实现的装置；而加热部10一般为加热丝，但不排除采用其他可实现的方式。
值得注意的是，当蒸镀材料被蒸镀到目标基板上形成蒸镀膜时，加热部10的温度一般是沿着上述线性布置方向呈梯度变化，从而在现有技术中，这可能导致蒸镀膜沿着上述线性布置方向的厚度呈梯度变化。因此，为改善加热部的温度分布，可以将温度补偿板3沿着上述线性布置方向布置，使得加热部1在线性布置方向上的温度分布更加一致。参阅图2，经试验证明，当加热部10在线性布置方向出现温度梯度时，通过温度补偿板3进行温度补偿后，所形成的蒸镀膜在该线性布置方向上的膜厚相对更加均一。
需要说明的是，上述实施例中的温度补偿板3包括若干温度补偿单元30，其按照线性布置方向排列。而温度补偿板3可以具有一体式结构，也可以具有分体式结构。当温度补偿板3为一体式时，温度补偿板3的若干温度补偿单元30为整体结构，而当温度补偿板3为分体式时，若干温度补偿单元30组合在一起，并且每个温度补偿单元30能够独立地对加热部10不同的加热位置进行温度补偿，这样就能够精确地对加热部10的各个位置进行温度补偿，提高温度补偿效率。
另外，不管是一体式还是分体式的温度补偿板3，其均可通过调节温度补偿单元的厚度对加热部1进行温度补偿。但是，由于一体式的温度补偿板3是对整个加热部10进行温度补偿的，这种温度补偿板3是采用一体成型的技术加工得到的，且在加工过程中需要根据加热部1具有不同加热温度的位置，来加工温度补偿板3与各个加热温度对应的部分的厚度，这样使得温度补偿板3的加工比较复杂。而分体式的温度补偿板由若干温度补偿单元组合而成，其在加工时，先加工每个温度补偿单元，然后将各个温度补偿单元组合在一起。且由于每个温度补偿单元30能够独立的对加热部10不同的加热位置进行温度补偿，而每个加热位置面积比较小，即使出现温度梯度，也在可接受的范围内。因此，在加工一个温度补偿单元时，并不需要对温度补偿单元各个部分的薄厚进行控制，只需要根据不同加热位置的加热温度，调整与之对应的温度补偿单元的整体薄厚即可。
通过上述分析可知，相对于一体式的温度补偿板，分体式补偿板不仅能够提高对加热部的温度补偿效率，而且还可以降低温度补偿板3 中各个温度补偿单元的加工难度。
另外，考虑到在加热装置1的内部气压不均衡时，蒸镀材料蒸发后形成的蒸镀气体从各个喷嘴喷出的喷出压力不同，导致蒸镀膜的膜厚分布呈U型形状。为了解决这个问题，可以通过调整各个喷嘴的孔径，使蒸镀气体的喷出压力相同。换句话说，通过调整喷嘴20的孔径可以改变加热装置1内部气压，使得加热装置1中的某些位置的较高气压通过较大孔径的喷嘴20得以降低，加热装置1中的某些位置的较低气压通过较小孔径的喷嘴20得以提高。
例如，假定蒸镀膜的膜厚分布呈倒U型结构，即蒸镀膜在上述线性布置方向的中部厚度比较厚，两侧厚度比较薄。此时，在本申请的实施例中，在从线性喷嘴组2的中心向线性喷嘴组2的两侧的方向上，使得线性喷嘴组2中的喷嘴20的孔径逐渐增大。参阅图3，经试验证明，线性喷嘴组2中喷嘴20的孔径越大，与其对应的蒸镀膜部分的厚度越厚。因此利用根据本申请的实施例的线性喷嘴组2，可以改善蒸镀膜的膜厚均一性。
反之，如果膜厚分布呈正U型结构，即蒸镀膜在上述线性布置方向的中部厚度比较薄，两侧厚度比较厚；则在本申请的另一实施例中，在从线性喷嘴组2的中心向线性喷嘴组2的两侧的方向上，使得线性喷嘴组2中喷嘴20的孔径逐渐减小，以使蒸镀膜的厚度更加均匀。
本申请实施例还提供了一种蒸发源系统，包括如上述技术方案所述的至少两个线性蒸发源，各线性蒸发源沿所述线性蒸发源的线性布置方向排列。
与现有技术相比，本实施例提供的蒸发源系统的有益效果与上述技术方案提供的线性蒸发源的有益效果相同，在此不做赘述。
而且，由于上述实施例提供的蒸发源系统中包括至少两个线性蒸发源，如果蒸镀膜中含有多种蒸镀材料时，可以在各线性蒸发源中加入不同的蒸镀材料，将这些蒸镀材料蒸镀到同一目标基板上即可。但是，由于每个线性蒸发源加入的蒸镀材料不同，此时就必须考虑每个线性蒸发源的蒸镀角，否则形成的蒸镀膜容易出现分层现象，导致蒸镀膜的混合均一性差。
例如，图4公开了一种蒸发源系统，包括第一线性蒸发源100和第二线性蒸发源200。但是由于第一线性蒸发源100和第二线性蒸发源 200的蒸镀角的问题，直接利用第一线性蒸发源100和第二线性蒸发源200对各自的蒸镀材料进行蒸镀后，在目标基板形成了由两种材料构成的蒸镀膜4，其也可称为双成分蒸镀膜。蒸镀膜4中存在分层现象，从而形成第一材料层41和第二材料层42交替出现的双成分蒸镀膜，使得蒸镀膜4的混合均一性差。
为了克服上述问题，参阅图5，上述实施例中，各线性蒸发源的蒸镀区域重合；因此，各线性蒸发源中的蒸镀材料即使不同，每个线性蒸发源蒸镀的蒸镀材料在目标基板上的分布区域也是重合的。这样不同的线性蒸发源蒸镀对应的蒸镀材料时，各蒸镀材料能够在同一区域充分混合，而如果这些蒸镀材料为不同种类的有机电致发光材料时，在制作发光层的过程中，能够保证发光层中各个有机电致发光材料的混合均匀性。
参阅图5，具体地，可以在喷嘴安装面上设置两个能够调整线性蒸发源的蒸镀区域的挡板。线性喷嘴组位于两个挡板之间；而通过两个挡板调节蒸镀区域的高度之差来实现挡板调整线性蒸发源的蒸镀区域。其中，挡板的高度可以定义为挡板伸出喷嘴安装面之外的长度。由于通过调整两个挡板的高度之差可以调整对应的线性蒸发源的蒸镀角，使得该线性蒸发源的蒸镀角足以覆盖目标基板，即蒸镀区域。因此，通过调整两个线性蒸发源中两个挡板的高度之差，即可调整各蒸发源的蒸镀角，使各线性蒸发源的蒸镀角覆盖同一蒸镀区域。而当目标基板位于这一蒸镀区域时，就能保证了各线性蒸发源蒸镀出的蒸镀气体在目标基板上充分混合，形成混合均一的蒸镀膜。至于线性蒸发源的蒸镀角选择，可以根据实际情况进行，只要能够使得各线性蒸发源的蒸镀区域重合即可。另外，在一示例中，此处的挡板与喷嘴安装面的夹角为90°。
值得注意的是，上述实施例提供的蒸发源系统中线性蒸发源的数量无论多少，其具体的操作过程与上文所述的相同。下面结合图5给出一种具体的蒸发源系统。
参阅图5，该蒸发源系统包括第一线性蒸发源100和第二线性蒸发源200。
其中第一线性蒸发源100的线性蒸镀面上设有第一左侧挡板101和第一右侧挡板102，且第一左侧挡板101的高度大于第一右侧挡板 102。
第二线性蒸发源200的线性蒸镀面上设有第二左侧挡板201和第二右侧挡板202，且第二右侧挡板202的高度大于第二左侧挡板201。
具体实施时，向第一线性蒸发源100中加入第一蒸镀材料，向第二线性蒸发源200中加入第二蒸镀材料。
调节第一线性蒸发源100的第一左侧挡板101和第一右侧挡板102的高度差，使得第一线性蒸发源100的蒸镀区域覆盖目标基板，调节第二线性蒸发源200的第二右侧挡板202和第二左侧挡板201的高度，使得第二线性蒸发源200的蒸镀区域覆盖目标基板。
当第一线性蒸发源100的蒸镀区域和第二线性蒸发源200的蒸镀区域覆盖目标基板时，通过第一线性蒸发源100蒸镀第一蒸镀材料，第二线性蒸发源200蒸镀第二材料，使得第一种蒸镀材料和第二蒸镀材料在目标基板上混合，形成双成分蒸镀膜4。
参阅图6，当第一线性蒸发源100和第二线性蒸发源200的蒸镀角均为70°-90°时，可以看出第一线性蒸发源100的蒸镀区域(由H1表示)和第二线性蒸发源200的蒸镀区域(由H2表示)的重合性并不好，所形成的双成分蒸镀膜的混合均一性最差，可能达到0；
参阅图7，而当第一线性蒸发源100和第二线性蒸发源200的蒸镀角均为40°-55°时，可以看出双成分蒸镀膜4的混合均一性有了进一步的提升，所形成的双成分蒸镀膜4的混合均一性约为70％左右。
需要说明的是，虽然上述实施例中第一线性蒸发源100可以利用第一左侧挡板101和第一右侧挡板102的高度差，调整第一线性蒸发源100的蒸镀角，并且第二线性蒸发源200可以利用第二右侧挡板102和第一左侧挡板101的高度差，调整第二线性蒸发源200的蒸镀角，但是，仍然不可能将双成分蒸镀膜4的混合均一性提升至100％。这是因为蒸镀材料从喷嘴出来后的在各个方向上的喷射速率不同，而喷嘴有导向气流的作用。因此，沿着喷嘴轴向方向的蒸镀速率Vc最高，向喷嘴两侧的蒸镀速率Vs逐渐降低，这就使得蒸镀材料在不同方向上蒸镀到目标基板时，蒸镀量以喷嘴轴向方向为中心向两侧依次减少。因此，可以通过降低各个喷嘴的轴线与对应的线性安装面所形成的喷嘴安装角度，并增加各个喷嘴孔径，提升双成分蒸镀膜4的混合均一性。参阅图8，经试验证明，通过这样的调整，双成分蒸镀膜4的混合均一 性提升到85％以上。
需要说明的是，上述实施例中第一线性蒸发源100的喷嘴安装角度可以与第二线性蒸发源200的喷嘴安装角度匹配，使得第一线性蒸发源100和第二线性蒸发源200相互补偿各自所蒸镀的膜的厚度差异。。
本申请实施例还提供了一种蒸镀装置，包括上述技术方案提供的线性蒸发源或上述技术方案提供的蒸发源系统。
与现有技术相比，本实施例提供的蒸镀装置与上述技术方案提供的线性蒸发源或上述技术方案提供的蒸发源系统的有益效果相同，在此不做赘述。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (11)

  1. 一种线性蒸发源，包括用于蒸发蒸镀材料的加热装置，所述加热装置的喷嘴安装面上设有线性喷嘴组，所述线性喷嘴组包括沿所述蒸发源的线性布置方向设在喷嘴安装面上的多个喷嘴；所述加热装置中设有能够使所述加热装置的加热温度均一的温度补偿板。
  2. 根据权利要求1所述的线性蒸发源，其中，所述加热装置的加热部位于温度补偿板内，所述温度补偿板与所述加热部中具有较高加热温度的位置对应的部分的厚度较薄，所述温度补偿板与所述较热部中具有较低加热温度的位置对应的部分的厚度较厚。
  3. 根据权利要求1或2所述的线性蒸发源，其中，所述温度补偿板为分体式结构或一体式结构。
  4. 根据权利要求3所述的线性蒸发源，其中，所述温度补偿板包括多个温度补偿单元，多个温度补偿单元沿着所述线性布置方向排列。
  5. 根据权利要求1或2所述的线性蒸发源，其中，在从所述线性喷嘴组的中心向所述线性喷嘴组的两侧的方向上，所述线性喷嘴组中喷嘴的孔径逐渐增大或减小。
  6. 一种蒸发源系统，包括至少两个如权利要求1～5中任一项所述的线性蒸发源，各个所述线性蒸发源沿所述线性布置方向排列。
  7. 根据权利要求6所述的蒸发源系统，其中，每个所述线性蒸发源中的所述喷嘴安装面上设有两个能够调整所述线性蒸发源的蒸镀区域的挡板，所述线性喷嘴组位于两个所述挡板之间。
  8. 根据权利要求7所述的蒸发源系统，其中，每个所述线性蒸发源中的两个所述挡板具有能够调节蒸镀区域的高度差；所述挡板的高度是指所述挡板伸出所述喷嘴安装面之外的长度。
  9. 根据权利要求8所述的蒸发源系统，其中，上述线性蒸发源中的较临近蒸发源系统外围的挡板具有比所述线性蒸发源中的较临近蒸发源系统中心的挡板更高的高度。
  10. 根据权利要求7或8所述的蒸发源系统，其中，当所述线性蒸发源的数目为两个时，通过适当设置挡板的高度，使得各各所述线性蒸发源的蒸镀角均为40°-55°。
  11. 一种蒸镀装置，包括根据权利要求1～5中任一项所述的线性蒸 发源或根据权利要求6～10中任一项所述的蒸发源系统。
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