WO2017067302A1 - 蒸镀设备及蒸镀方法 - Google Patents

蒸镀设备及蒸镀方法 Download PDF

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Publication number
WO2017067302A1
WO2017067302A1 PCT/CN2016/094991 CN2016094991W WO2017067302A1 WO 2017067302 A1 WO2017067302 A1 WO 2017067302A1 CN 2016094991 W CN2016094991 W CN 2016094991W WO 2017067302 A1 WO2017067302 A1 WO 2017067302A1
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Prior art keywords
evaporation
vapor deposition
chamber
source
limiting plate
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PCT/CN2016/094991
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English (en)
French (fr)
Inventor
黄俊淞
申永奇
叶岚凯
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to US15/502,941 priority Critical patent/US10494711B2/en
Publication of WO2017067302A1 publication Critical patent/WO2017067302A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • Embodiments of the present disclosure relate to an evaporation apparatus and an evaporation method.
  • a general vapor deposition apparatus includes a substrate 1 and a vapor deposition chamber 2.
  • a linear vapor deposition source 21 is disposed in the vapor deposition chamber 2, and two restriction plates 22 are disposed on the sidewall of the vapor deposition chamber 2; the substrate 1 is located directly above the linear vapor deposition source 21.
  • the organic material in the vapor deposition source 21 is vaporized into organic material molecules, and an organic thin film is formed on the substrate 1.
  • the vapor deposition zone and the vapor deposition angle of the linear vapor deposition source are determined by the limiting plate, and the evaporation angle is fixed after determining the structure of the vapor deposition device according to the organic material to be evaporated. If the organic material to be evaporated changes, it is necessary to re-determine the structure of the evaporation equipment and perform multiple tests on the evaporation equipment to ensure that the evaporation equipment can achieve the best performance. In this process, it is necessary to perform multiple chamber opening, modification and film formation tests on the vapor deposition equipment.
  • the organic material is easily oxidized, the organic material reacts with the air entering the vapor deposition chamber after the cavity is opened, so that the organic material needs to be replaced after the cavity is opened, which is not only time consuming but also consumes a large amount of resources.
  • At least one embodiment of the present disclosure provides an evaporation apparatus including an evaporation chamber and a moving device;
  • the vapor deposition chamber is provided with an evaporation source, and the sidewall of the evaporation chamber is provided with two limiting plates;
  • the moving device is disposed at a bottom of the evaporation chamber, and the moving device can drive the evaporation chamber to move relative to the limit plate.
  • the moving device is disposed at a bottom of the evaporation source.
  • the moving device drives the vapor deposition source to move up and down, changing a relative height between the evaporation source and the limiting plate.
  • the moving device is disposed at a bottom of the limiting plate.
  • the restricting plate changes a relative height with the vapor deposition source as the moving device moves up and down.
  • the mobile device is a bellows.
  • the vapor deposition apparatus further includes a servo motor control system coupled to the mobile device to drive the mobile device to move up and down.
  • the evaporation source is a linear evaporation source.
  • the vapor deposition chamber includes two body evaporation chambers and an impurity evaporation chamber, and the impurity evaporation chamber is located between the two body evaporation chambers.
  • the vapor deposition apparatus further includes a mask plate disposed on the evaporation chamber.
  • At least one embodiment of the present disclosure provides a method of performing vapor deposition using the above vapor deposition apparatus, comprising:
  • the evaporation condition including at least an evaporation range and a thickness distribution
  • the new organic material is evaporated.
  • the adjusting the relative height between the evaporation source and the limiting plate according to the evaporation condition of the new organic material comprises:
  • the moving device drives the evaporation source to move up and down to change the relative height between the evaporation source and the limiting plate.
  • the adjusting the relative height between the evaporation source and the limiting plate according to the evaporation condition of the new organic material comprises:
  • the moving device drives the limiting plate to move up to change the relative height between the evaporation source and the limiting plate.
  • the method further includes:
  • the boundary mixing efficiency of the bulk material in the body evaporation chamber and the impurity material in the impurity evaporation chamber is adjusted by adjusting the height of the limiting plate on both sides of the body evaporation chamber and the impurity evaporation chamber.
  • the method further includes:
  • a predetermined evaporation range is obtained by adjusting a relative height between the evaporation source and the limiting plate.
  • a moving device is arranged at the bottom of the vapor deposition chamber, and the evaporation chamber is moved up and down by the moving device, thereby changing the relative height between the evaporation source and the limiting plate, and the evaporation of different organic materials can be satisfied without modifying the evaporation equipment.
  • the plating conditions not only significantly increase the flexibility of the equipment, but also save time and resource consumption.
  • FIG. 1 is a schematic structural view of a vapor deposition apparatus of a conventional technique
  • FIG. 2 is a schematic structural view of an evaporation apparatus according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural view of an evaporation apparatus according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural view of an evaporation apparatus according to an embodiment of the present disclosure.
  • FIG. 5 is a flow chart of an evaporation method in accordance with an embodiment of the present disclosure.
  • B impurity evaporation chamber
  • C bulk evaporation chamber
  • the conventional design in Figure 1 can control the evaporation angle and evaporation range of a single evaporation source, but it can only be applied to specific organic materials and product processes, and lacks flexibility, such as To make the evaporation equipment suitable for different organic materials, the evaporation equipment needs to be modified.
  • at least one embodiment of the present disclosure provides an evaporation apparatus, see FIG.
  • the vapor deposition apparatus includes a vapor deposition chamber 2 and a moving device 3, wherein the vapor deposition chamber 2 is provided with a vapor deposition source 21, which is a linear evaporation source, usually an organic material.
  • a vapor deposition source 21 which is a linear evaporation source, usually an organic material.
  • the side wall of the vapor deposition chamber is provided with two limiting plates 22 for controlling the evaporation conditions of the organic material, and the evaporation conditions include a vapor deposition range and a thickness distribution.
  • the substrate 1 When vapor deposition is performed, in order to enable the organic material in the vapor deposition chamber 2 to be formed on the substrate 1, the substrate 1 is disposed directly above the vapor deposition chamber 2, and the vapor-deposited material is evaporated from the evaporation source 21, and It is deposited on the surface of the substrate 1 facing the vapor deposition apparatus.
  • the limiting plate 22 on the left side of the vapor deposition chamber 2 is for limiting the vapor deposition angle, the vapor deposition range, and the thickness distribution when the vapor deposition source 21 is coated on the left side of the substrate 1, and the limiting plate 22 on the right side of the vapor deposition chamber 2 is used to restrict steaming.
  • the moving device 3 is disposed at the bottom of the vapor deposition chamber 2.
  • the vapor deposition chamber 2 includes an evaporation source 21 and a limiting plate 22, and the moving device 3 can be disposed at the bottom of the vapor deposition chamber 2 in various ways.
  • the mobile device 3 may be disposed at the bottom of the evaporation source 21, and when the mobile device 3 moves up and down, the relative relationship between the evaporation source 21 and the limiting plate 22 may be changed.
  • the height further changes the vapor deposition angle, the vapor deposition range, the thickness distribution, and the like of the vapor deposition source 21.
  • a moving device may be disposed at the bottom of each of the limiting plates 22, and when the moving device 3 moves up and down, the relative relationship between the limiting plate 22 and the evaporation source may be changed.
  • the height further changes the vapor deposition angle, the vapor deposition range, the thickness distribution, and the like of the vapor deposition source 21.
  • the range, thickness, and the like of the organic thin film to be formed on the left and right sides of the substrate 1 of the vapor deposition source 21 are different, and therefore, the method is performed by using the method according to an embodiment of the present disclosure.
  • the device 3 controls the movement heights of the left and right restriction plates 22 to be different.
  • the moving height of the restriction plates 22 on the left and right sides can be determined by the vapor deposition conditions of the vapor deposition source 21.
  • the moving device 3 at the bottom of the vapor deposition chamber 2, the vapor deposition angle, the vapor deposition range, the vapor deposition thickness, and the like of the organic material vapor deposition source can be flexibly controlled, and the boundary mixing efficiency of the material can be improved.
  • the mobile device 3 can be a bellows.
  • the vapor deposition apparatus further includes a servo motor control system 4 connected to the mobile device 3 and disposed at the bottom of the mobile device 3 for driving the mobile device 3.
  • the moving device 3 may be a bellows that is driven by the servo motor control system 4 to drive the vapor deposition source 21 to move up and down to change the height of the vapor deposition source 21 relative to the limiting plate 22.
  • the organic film evaporated on the substrate 1 is usually a mixed material.
  • the vapor deposition chamber 2 includes two body evaporation chambers and an impurity evaporation chamber, wherein the body evaporation chamber The bulk material is stored, and the impurity material is stored in the impurity evaporation chamber.
  • the impurity evaporation chamber is located between the two body evaporation chambers. As shown in FIG. 2 and FIG. 3, the vapor deposition chamber A and the vapor deposition chamber C are bulk vapor deposition chambers, and the vapor deposition chamber B is an impurity evaporation chamber.
  • the impurity evaporation chamber and the evaporation source between the evaporation evaporation chamber and the limiting plate can be quickly adjusted by the moving device. Relative height, which greatly improves the adaptability of the equipment.
  • the vapor deposition apparatus usually further includes a mask 5 which is disposed between the substrate 1 and the vapor deposition chamber 2 as shown in FIG.
  • a mask 5 which is disposed between the substrate 1 and the vapor deposition chamber 2 as shown in FIG.
  • a moving device is disposed at the bottom of the evaporation chamber, and the evaporation chamber is moved up and down by the moving device, thereby changing the relative height between the evaporation source and the limiting plate, without modifying the evaporation device. It can meet the evaporation conditions of different organic materials, which not only significantly increases the flexibility of the equipment, but also saves time and resource consumption.
  • the flow of the evaporation method includes:
  • the new organic material is evaporated based on the adjusted vapor deposition equipment.
  • the vapor deposition conditions include at least a vapor deposition range and a thickness distribution.
  • the evaporation conditions of different organic materials are different.
  • the evaporation device can obtain the vapor deposition conditions input by the user, and the vapor deposition conditions input by the user are used as new organic materials. Evaporation conditions.
  • the relative height between the vapor deposition source and the limiting plate is adjusted according to the evaporation conditions of the new organic material.
  • the mobile device can be disposed at the bottom of the evaporation source or at the bottom of the limiting plate.
  • the method according to the embodiment of the present disclosure is based on the new method.
  • the evaporation condition of the organic material is adjusted and the relative height between the evaporation source and the limiting plate is adjusted, the following two methods may be included.
  • the first way according to the evaporation condition of the new organic material, the mobile device under the evaporation source is driven by the servo motor system, and the moving device drives the evaporation source to move up and down, changing the relative relationship between the evaporation source and the limiting plate. height.
  • the mobile device can be a bellows. In this way, the height of the limiting plate is constant. If it is necessary to increase the relative height between the evaporation source and the limiting plate, the moving device under the evaporation source can be driven by the servo motor system to drive the evaporation. The source moves downward, thereby increasing the relative height between the plate and the limiting plate; if it is desired to reduce the relative height between the evaporation source and the limiting plate, the mobile device located below the evaporation source can be driven by the servo motor system. The evaporation source is driven to move upward, thereby reducing the relative height between the plate and the limiting plate.
  • the moving device under the limiting plate is driven by the servo motor system to drive the upper and lower movements to change the relative height between the evaporation source and the limiting plate.
  • the height of the evaporation source is constant. If it is necessary to increase the relative height between the evaporation source and the limiting plate, the moving device under the limiting plate can be driven by the servo motor control system to drive the limiting plate. Moving upwards, thereby increasing the relative height with the evaporation source; if it is necessary to reduce the relative height between the evaporation source and the limiting plate, the mobile device located below the limiting plate can be driven to move downward by the servo motor system , the limiting plate is moved downward, thereby reducing the relative height between the evaporation source and the evaporation source.
  • the new organic material can be vapor-deposited according to the adjusted vapor deposition equipment. If the relative height between the evaporation source and the limiting plate is increased, the evaporation angle of the new organic material will become smaller, and accordingly, the evaporation range will also become smaller; if the relative height between the evaporation source and the limiting plate When it is reduced, the vapor deposition angle of the new organic material will become larger, and accordingly, the vapor deposition range will also become larger.
  • the height of the limiting plate on both sides of the body evaporation chamber and the impurity evaporation chamber determines the boundary mixing efficiency of the bulk material in the body evaporation chamber and the impurity material in the impurity evaporation chamber, thereby affecting the coating of the entire substrate. Quality, for this reason, in the method according to the embodiment of the present disclosure, the height of the limiting plate on both sides of the body evaporation chamber and the impurity evaporation chamber can be adjusted by the moving device, thereby adjusting the body material and the impurity evaporation in the body evaporation chamber. The boundary mixing efficiency of the impurity material in the plating chamber.
  • the mobile device can be a bellows.
  • the evaporation angle and the vapor deposition range of the vapor deposition chamber and the impurity evaporation chamber can be appropriately increased, thereby increasing the boundary mixing efficiency.
  • the evaporation angle and the evaporation range of the vapor deposition chamber and the impurity evaporation chamber can be appropriately reduced, thereby reducing the boundary mixing efficiency.
  • the method according to an embodiment of the present disclosure will also be based on a mask plate provided on the evaporation device, and by adjusting the relative height between the evaporation source and the restriction plate, To obtain the preset evaporation range.
  • the preset evaporation range is determined by the fabrication requirements of the substrate. Taking FIG. 4 as an example, the evaporation source has a farthest position on the left side of the substrate as a, and the farthest position on the right side is b, and the evaporation range is a region between a and b on the substrate.
  • the required vapor deposition range is c to d, which can be achieved by increasing the relative height between the vapor deposition chamber and the restriction plate.
  • a moving device is disposed at the bottom of the evaporation chamber, and the evaporation chamber is moved up and down by the moving device, thereby changing the relative height between the evaporation source and the limiting plate, without performing the evaporation device
  • the transformation can meet the evaporation conditions of different organic materials, which not only significantly improves the flexibility of the equipment, but also saves time and resource consumption.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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Abstract

一种蒸镀设备，包括：蒸镀腔(2)及移动装置(3)；所述蒸镀腔(2)内设置有蒸镀源(21)，所述蒸镀腔(2)的侧壁设置有两个限制板(22)；所述移动装置(3)设置于所述蒸镀腔(2)的底部。还公开了一种利用该蒸镀设备的蒸镀方法。

Description

蒸镀设备及蒸镀方法 技术领域
本公开的实施例涉及一种蒸镀设备及蒸镀方法。
背景技术
随着OLED(Organic Light-Emitting Diode，有机发光二极管)行业的飞速发展，新的有机材料不断涌现。为了适应不同产品的设计需求，需要采用通常的蒸镀设备能够快速地将新的有机材料蒸镀成不同性能的有机薄膜。
如图1所示，通常的蒸镀设备包括：基板1、蒸镀腔2。其中，蒸镀腔2内设置有线性蒸镀源21，蒸镀腔2的侧壁上设置有两个限制板22；基板1位于线性蒸镀源21的正上方。在进行真空蒸镀时，蒸镀源21内的有机材料气化成有机材料分子，并在基板1上形成有机薄膜。
线性蒸镀源的蒸镀区域和蒸镀角度由限制板确定，当根据待蒸镀的有机材料，在确定蒸镀设备的结构之后，蒸镀角度便已固定。如果待蒸镀的有机材料发生变化，则需要重新确定蒸镀设备的结构，并对蒸镀设备进行多次测试，以确保蒸镀设备能够达到最佳的性能。在此过程中，需要对蒸镀设备多次进行开腔、改造及成膜测试等。然而由于有机材料容易被氧化，开腔后有机材料会与进入蒸镀腔的空气反应，因而开腔后需重新更换有机材料，该过程不仅耗时较长，而且资源消耗较大。
发明内容
本公开的至少一个实施例提供一种蒸镀设备，包括蒸镀腔及移动装置；
其中，所述蒸镀腔内设置有蒸镀源，所述蒸镀腔的侧壁设置有两个限制板；以及
所述移动装置设置于所述蒸镀腔的底部，所述移动装置可带动所述蒸镀腔相对于所述限制板上下移动。
在本公开的一个实施例中，其中，所述移动装置设置于所述蒸镀源的底部。
在本公开的一个实施例中，所述移动装置带动所述蒸镀源上下移动，改变所述蒸镀源与所述限制板之间的相对高度。
在本公开的一个实施例中，所述移动装置设置于所述限制板的底部。
在本公开的一个实施例中，所述限制板在随着所述移动装置上下移动的过程中，改变与所述蒸镀源之间的相对高度。
在本公开的一个实施例中，所述移动装置为波纹管。
在本公开的一个实施例中，所述蒸镀设备还包括伺服马达控制系统，所述伺服马达控制系统与所述移动装置相连，以驱动所述移动装置上下移动。
在本公开的一个实施例中，所述蒸发源为线性蒸发源。
在本公开的一个实施例中，所述蒸镀腔包括两个本体蒸镀腔及杂质蒸镀腔，所述杂质蒸镀腔位于两个本体蒸镀腔之间。
在本公开的一个实施例中，所述蒸镀设备还包括掩膜版，所述掩膜版设置于所述蒸镀腔之上。
本公开的至少一个实施例提供一种利用上述蒸镀设备进行蒸镀的方法，包括：
当检测到蒸镀腔内的有机材料变化时，获取新的有机材料的蒸镀条件，所述蒸镀条件至少包括蒸镀范围及厚度分布；
根据所述新的有机材料的蒸镀条件，调整所述蒸镀源与所述限制板之间的相对高度；
蒸镀所述新的有机材料。
在本公开的一个实施例中，所述根据所述新的有机材料的蒸镀条件，调整所述蒸镀源与所述限制板之间的相对高度，包括：
根据所述新的有机材料的蒸镀条件，通过所述伺服马达系统驱动位于所述蒸镀源下方的所述移动装置；
所述移动装置带动所述蒸镀源上下移动，以改变所述蒸镀源与所述限制板之间的相对高度。
在本公开的一个实施例中，所述根据所述新的有机材料的蒸镀条件，调整所述蒸镀源与所述限制板之间的相对高度，包括：
根据所述新的有机材料的蒸镀条件，通过所述伺服马达系统驱动位于所述限制板下方的所述移动装置；
所述移动装置带动所述限制板上下移动，以改变所述蒸镀源与所述限制板之间的相对高度。
在本公开的一个实施例中，所述方法还包括：
通过调节任一本体蒸镀腔与所述杂质蒸镀腔两侧的限制板高度，调整所述本体蒸镀腔内本体材料与所述杂质蒸镀腔内杂质材料的边界混合效率。
在本公开的一个实施例中，所述方法还包括：
基于所述掩膜版，通过调整所述蒸镀源与所述限制板之间的相对高度，获取满足预设蒸镀范围。
在蒸镀腔的底部设置移动装置，通过移动装置带动蒸镀腔上下移动，从而改变蒸镀源与限制板之间的相对高度，无需对蒸镀设备进行改造，即可满足不同有机材料的蒸镀条件，不仅明显地提高了设备灵活性，而且节省了时间及资源消耗。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1是惯常技术的蒸镀设备的结构示意图；
图2是根据本公开的一个实施例的蒸镀设备的结构示意图；
图3是根据本公开的一个实施例的蒸镀设备的结构示意图；
图4是根据本公开的一个实施例的蒸镀设备的结构示意图；以及
图5是根据本公开的一个实施例的蒸镀方法的流程图。
附图标记：
1、基板；                 2、蒸镀腔；
21、蒸镀源；              22、限制板；
3、移动装置；             4、伺服马达控制系统；
5、掩膜版；               A、本体蒸镀腔；
B、杂质蒸镀腔；           C、本体蒸镀腔。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
在当前的OLED蒸镀领域，图1中惯常的设计方式，虽然可以控制单个蒸镀源的蒸镀角度和蒸镀范围，但只能适用于特定的有机材料和产品工艺，缺乏灵活性，如使蒸镀设备适用于不同的有机材料，需对蒸镀设备进行改造。为了提高蒸镀设备的灵活性，并大幅度减少蒸镀设备因更换材料导致的改造费用、时间、材料等消耗，本公开的至少一个实施例提供了一种蒸镀设备，参见图2，该蒸镀设备包括：蒸镀腔2及移动装置3，其中，蒸镀腔2内设置有蒸镀源21，该蒸镀源21为线性蒸发源，通常为有机材料。蒸镀腔的侧壁设置有两个限制板22，该限制板22用于控制有机材料的蒸镀条件，该蒸镀条件包括蒸镀范围及厚度分布等。在进行蒸镀时，为了使蒸镀腔2中的有机材料能够在基板1上成膜，基板1设置在蒸镀腔2正上方，被蒸镀的材料从蒸镀源21中蒸发出来，并沉积在基板1的面向蒸镀设备的表面上。蒸镀腔2左侧的限制板22用于限制蒸镀源21向基板1左侧镀膜时的蒸镀角度、蒸镀范围及厚度分布，蒸镀腔2右侧的限制板22用于限制蒸镀源21向基板1右侧镀膜时的蒸镀角度、蒸镀范围及厚度分布。此外，为了便于调整蒸镀源与限制板之间的相对高度，移动装置3设置于蒸镀腔2的底部。
蒸镀腔2包括蒸镀源21及限制板22，移动装置3可以以多种方式设置于蒸镀腔2底部。
在本公开的一个实施例中，如图2所示，移动装置3可以设置于蒸镀源21的底部，当移动装置3上下移动时，可以改变蒸镀源21与限制板22之间的相对高度，进而改变蒸镀源21的蒸镀角度、蒸镀范围及厚度分布等。
在本公开的另一个实施例中，如图3所示，移动装置可以设置于每个限制板22的底部，当移动装置3上下移动时，可以改变限制板22与蒸镀源之间的相对高度，进而改变蒸镀源21的蒸镀角度、蒸镀范围及厚度分布等。需要说明的是，一般情况下，蒸镀源21在基板1左右两侧上需要形成的有机薄膜的范围、厚度等是不同的，因此，采用根据本公开实施例的方法通过移动 装置3控制左右两侧限制板22移动高度也是不同的。对于左右两侧限制板22的移动高度，可由蒸镀源21的蒸镀条件确定。
本实施例通过在蒸镀腔2的底部设置移动装置3，可对有机材料蒸镀源的蒸镀角度、蒸镀范围、蒸镀厚度等进行灵活的控制，提高了材料的边界混合效率。例如，移动装置3可以为波纹管。
如图2及图3所示，蒸镀设备还包括伺服马达控制系统4，该伺服马达控制系统4与移动装置3相连，可设置于移动装置3的底部，用于驱动移动装置3。例如，该移动装置3可以为波纹管，在伺服马达控制系统4的驱动下转动，进而带动蒸镀源21上下移动，以改变蒸镀源21相对于限制板22的高度。
在显示领域，基板1上蒸镀的有机薄膜通常为一种混合材料，为了满足蒸镀需求，蒸镀腔2包括两个本体蒸镀腔和一个杂质蒸镀腔，其中，本体蒸镀腔内存储着本体材料，杂质蒸镀腔内存储着杂质材料。为使蒸镀过程中掺杂更为均匀，杂质蒸镀腔位于两个本体蒸镀腔之间。如图2和图3所示，蒸镀腔A和蒸镀腔C为本体蒸镀腔，蒸镀腔B为杂质蒸镀腔。当需要更改本体蒸镀腔和杂质蒸镀腔内有机材料在基板1上的边界混合效率时，可通过移动装置快速调整杂质蒸镀腔及杂质蒸镀腔内蒸镀源与限制板之间的相对高度，从而大大地提高了设备的适应性。
蒸镀设备通常还包括掩膜版5，如图4所示，该掩膜版5设置于基板1与蒸镀腔2之间。通过设置掩膜版5，可精确地在基板1的不同区域上蒸镀不同厚度、不同性能以及不同图案的有机薄膜，从而实现了对mask shadow effect(掩模阴影效应)进行控制。在本实施例中，根据制作需求，蒸镀设备内所设置的掩膜版5的样式也是不同的。
在本公开的一个实施例中，在蒸镀腔的底部设置移动装置，通过移动装置带动蒸镀腔上下移动，从而改变蒸镀源与限制板之间的相对高度，无需对蒸镀设备进行改造，即可满足不同有机材料的蒸镀条件，不仅明显地提高了设备灵活性，而且节省了时间及资源消耗。
应用图2至图4中所示的任一蒸镀设备，本公开的至少一个实施例提供了一种蒸镀方法，参见图5，该蒸镀方法的流程包括：
当检测到蒸镀腔内的有机材料变化时，获取新的有机材料的蒸镀条件；
根据新的有机材料的蒸镀条件，调整蒸镀源与限制板之间的相对高度；以及
基于调整后蒸镀设备，对新的有机材料进行蒸镀。
所述蒸镀条件至少包括蒸镀范围及厚度分布。通常不同有机材料的蒸镀条件是不同的，当蒸镀腔内的有材料发生变化时，蒸镀设备可获取用户输入的蒸镀条件，并将用户输入的蒸镀条件作为新的有机材料的蒸镀条件。
之后，根据新的有机材料的蒸镀条件，调整蒸镀源与限制板之间的相对高度。
由上述图2及图3可知，移动装置既可设置在蒸镀源的底部，也可设置在限制板的底部，基于这两种不同的设置方式，根据本公开的实施例的方法在根据新的有机材料的蒸镀条件，调整蒸镀源与限制板之间的相对高度时，可包括如下两种方式。
第一种方式：根据新的有机材料的蒸镀条件，通过伺服马达系统驱动位于蒸镀源下方的移动装置，移动装置带动控制蒸镀源上下移动，改变蒸镀源与限制板之间的相对高度。
例如，该移动装置可以为波纹管。在该种方式下，限制板的高度是不变的，如果需要增大蒸镀源与限制板之间的相对高度，则可通过伺服马达系统驱动位于蒸镀源下方的移动装置，带动蒸镀源向下移动，从而增大了与限制板之间的相对高度；如果需要减小蒸镀源与限制板之间的相对高度，则可通过伺服马达系统驱动位于蒸镀源下方的移动装置，带动蒸镀源向上移动，从而减小了与限制板之间的相对高度。
第二种方式：根据新的有机材料的蒸镀条件，通过伺服马达系统驱动位于限制板下方的移动装置，带动限制板上下移动，以改变蒸镀源与限制板之间的相对高度。
在该种方式下，蒸镀源的高度是不变的，如果需要增大蒸镀源与限制板之间的相对高度，则可通过伺服马达控制系统驱动位于限制板下方的移动装置带动限制板向上移动，从而增大了与蒸镀源之间的相对高度；如果需要减小蒸镀源与限制板之间的相对高度，则可通过伺服马达系统驱动位于限制板下方的移动装置向下移动，带动限制板向下移动，从而减小了与蒸镀源之间的相对高度。
根据新的有机材料的蒸镀条件，调整了蒸镀源与限制板之间的相对高度后，即可根据调整后的蒸镀设备，对新的有机材料进行蒸镀。如果蒸镀源与限制板之间的相对高度增大，则新有机材料的蒸镀角度将变小，相应地，蒸镀范围也将变小；如果蒸镀源与限制板之间的相对高度减小，则新有机材料的蒸镀角度将变大，相应地，蒸镀范围也将变大。
在真空蒸镀技术领域，本体蒸镀腔与杂质蒸镀腔两侧的限制板高度，决定本体蒸镀腔内本体材料与杂质蒸镀腔内杂质材料的边界混合效率，进而影响整个基板的镀膜质量，为此，在根据本公开实施例的方法中，可通过移动装置调节任一本体蒸镀腔与杂质蒸镀腔两侧的限制板高度，进而调整本体蒸镀腔内本体材料与杂质蒸镀腔内杂质材料的边界混合效率。例如，移动装置可以为波纹管。例如，可通过减少蒸镀腔与限制板之间的相对高度，适当地增大本体蒸镀腔与杂质蒸镀腔的蒸镀角度及蒸镀范围，进而增大边界混合效率。同时还可通过增大蒸镀腔与限制板之间的相对高度，适当地减小本体蒸镀腔与杂质蒸镀腔的蒸镀角度及蒸镀范围，进而减小边界混合效率。
此外，为了在基板的预设范围内蒸镀有机材料，根据本公开实施例的方法还将基于蒸镀设备上设置的掩膜版，并通过调整蒸镀源与限制板之间的相对高度，以获取满足预设蒸镀范围。预设蒸镀范围由基板的制作要求确定。以图4为例，蒸镀源在基板左侧蒸镀最远位置为a，右侧蒸镀最远位置为b，蒸镀范围为基板上a～b之间的区域。而由蒸镀设备上设置的掩膜版可知，所需的蒸镀范围为c～d，此时可通过增大蒸镀腔与限制板之间的相对高度实现。
在根据本公开实施例的方法中，在蒸镀腔的底部设置移动装置，通过移动装置带动蒸镀腔上下移动，从而改变蒸镀源与限制板之间的相对高度，无需对蒸镀设备进行改造，即可满足不同有机材料的蒸镀条件，不仅明显地提高了设备灵活性，而且节省了时间及资源消耗。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。
本申请要求于2015年10月21日递交的中国专利申请第201510688878.3号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (15)

  1. 一种蒸镀设备，其包括：
    蒸镀腔及移动装置；
    所述蒸镀腔内设置有蒸镀源，所述蒸镀腔的侧壁设置有两个限制板；
    所述移动装置设置于所述蒸镀腔下方。
  2. 根据权利要求1所述的蒸镀设备，其中，所述移动装置设置于所述蒸镀源下方。
  3. 根据权利要求2所述的蒸镀设备，其中，所述移动装置带动所述蒸镀源上下移动，改变所述蒸镀源与所述限制板之间的相对高度。
  4. 根据权利要求1所述的蒸镀设备，其中，所述移动装置设置于所述限制板下方。
  5. 根据权利要求4所述的蒸镀设备，其中，所述移动装置带动所述限制板上下移动，改变所述限制板与所述蒸镀源之间的相对高度。
  6. 根据权利要求1至5中任何一项所述的蒸镀设备，其中，所述蒸镀设备还包括伺服马达控制系统，所述伺服马达控制系统与所述移动装置相连。
  7. 根据权利要求1至6中任何一项所述的蒸镀设备，其中，所述蒸发源为线性蒸发源。
  8. 根据权利要求1至7中任何一项所述的蒸镀设备，其中，所述蒸镀腔包括两个本体蒸镀腔及杂质蒸镀腔，所述杂质蒸镀腔位于两个本体蒸镀腔之间。
  9. 根据权利要求1至8中任何一项所述的蒸镀设备，其中，所述蒸镀设备还包括掩膜版，所述掩膜版设置于所述蒸镀腔上方。
  10. 根据权利要求1至9中任何一项所述的蒸镀设备，其中，所述移动装置为波纹管。
  11. 一种利用权利要求1至10中任何一项所述的蒸镀设备的蒸镀方法，包括：
    当检测到蒸镀腔内的有机材料变化时，获取新的有机材料的蒸镀条件，所述蒸镀条件至少包括蒸镀范围及厚度分布；
    根据所述新的有机材料的蒸镀条件，调整所述蒸镀源与所述限制板之间 的相对高度；
    基于调整后蒸镀设备，蒸镀所述新的有机材料。
  12. 根据权利要求11所述的方法，其中，所述根据所述新的有机材料的蒸镀条件，调整所述蒸镀源与所述限制板之间的相对高度，包括：
    根据所述新的有机材料的蒸镀条件，通过所述伺服马达系统驱动位于所述蒸镀源下方的所述移动装置，带动所述蒸镀源移动，以改变所述蒸镀源与所述限制板之间的相对高度。
  13. 根据权利要求11或12所述的方法，其中，所述根据所述新的有机材料的蒸镀条件，调整所述蒸镀源与所述限制板之间的相对高度，包括：
    根据所述新的有机材料的蒸镀条件，通过所述伺服马达系统驱动位于所述限制板下方的所述移动装置，带动所述限制板移动，以改变所述蒸镀源与所述限制板之间的相对高度。
  14. 根据权利要求11至13中任何一项所述的方法，其中，所述蒸镀腔包括两个本体蒸镀腔及杂质蒸镀腔，所述杂质蒸镀腔位于两个本体蒸镀腔之间，所述方法还包括：通过调节任一本体蒸镀腔与所述杂质蒸镀腔两侧的限制板高度，调整所述本体蒸镀腔内本体材料与所述杂质蒸镀腔内杂质材料的边界混合效率。
  15. 根据权利要求11所述的方法，其中，所述蒸镀设备还包括掩膜版，所述掩膜版设置于所述蒸镀腔上方，所述方法包括：
    基于所述掩膜版，通过调整所述蒸镀源与所述限制板之间的相对高度，获取满足预设蒸镀范围。
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